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HMC1087F10
v03.1014
Amplifiers - Linear & Power - SMT
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Typical Applications
Features
The HMC1087F10 is ideal for
High Psat: +38.5 dBm
• Test Instrumentation
Power Gain at Psat: 6.5 dB
• General Communications
High Output IP3: +43.5 dBm
• Radar
Small Signal Gain: 11 dB
• EW/ECM
Supply Voltage: Vdd = +28V @ 850 mA
50 Ohm Matched Input/Output
Functional Diagram
10-Lead Flange Mount Package
General Description
The HMC1087F10 is an 8W Gallium Nitride (GaN)
MMIC Power Amplifier which operates between 2 and
20 GHz, and is provided in a 10-lead flange mount
package. The amplifier typically provides 11 dB of
small signal gain, +39 dBm of saturated output power,
and +43 dBm output IP3 at +28 dBm output power per
tone. The amplifier draws 850 mA quiescent current
from a +28V DC supply. The RF I/Os are matched to
50 Ohms for ease of use.
Electrical Specifications, TA = +25° C, Vdd =+28V, Idd = 850 mA [1]
Parameter
Min.
Frequency Range
Typ.
Max.
Min.
2 - 12
Gain
8
11
Typ.
Max.
Min.
12 - 17
7.5
10.5
7
Typ.
Max.
Units
17 - 20
GHz
10
dB
Gain Flatness
±0.6
±0.6
±0.7
dB
Gain Variation Over Temperature
0.014
0.024
0.018
dB/ °C
Input Return Loss
12
12
12
dB
Output Return Loss
13
12
11
dB
Output Power for 3 dB Compression (P3dB)
38.5
37.5
37
dBm
Power Gain for 3dB compression (P3dB)
8.5
7
6
dB
39.5
38.5
37.5
dBm
43.5
42.5
42
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
[2]
Power Added Efficiency
30
17
15
Total Supply Current
850
850
850
mA
[1] Adjust Vgg between -8 to 0V to achieve Idd = 850 mA typical.
[2] Measurement taken at Pout / tone = +28 dBm.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1087F10
v03.1014
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Gain & Return Loss
Gain vs. Temperature
15
13
0
Gain (dB)
Response (dB)
10
-10
11
9
-20
7
-30
5
-40
1.5 3 4.5 6 7.5 9 10.5 12 13.5 15 16.5 18 19.5 21 22.5
2
5
8
S21
S11
25 C
S22
Gain vs. Vdd
17
20
85 C
-40 C
0
-5
Return Loss (dB)
13
Gain (dB)
14
Input Return Loss vs. Temperature
15
11
9
7
-10
-15
-20
-25
5
-30
2
5
8
11
14
17
20
2
5
8
FREQUENCY (GHz)
24V
11
14
17
20
FREQUENCY (GHz)
28V
32V
25 C
Output Return Loss vs. Temperature
85 C
-40 C
Pout vs. Frequency
45
0
-5
40
-10
Pout (dBm)
Return Loss (dB)
11
FREQUENCY (GHz)
FREQUENCY (GHz)
Amplifiers - Linear & Power - SMT
20
-15
35
30
-20
25
-25
20
-30
2
5
8
11
14
17
20
25 C
85 C
2
5
8
11
14
17
20
FREQUENCY (GHz)
FREQUENCY (GHz)
-40 C
P3dB
Psat
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC1087F10
v03.1014
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
45
40
40
P3dB (dBm)
P3dB (dBm)
P3dB vs Supply Voltage
45
35
30
25
2
5
8
11
14
17
20
2
5
8
FREQUENCY (GHz)
+25 C
+85 C
24V
-40 C
Psat vs. Temperature
14
17
20
28V
32V
Psat vs. Supply Voltage
45
40
40
Psat (dBm)
45
35
30
35
30
25
25
2
5
8
11
14
17
20
2
5
8
FREQUENCY (GHz)
+25 C
11
14
17
20
FREQUENCY (GHz)
+85 C
-40 C
24V
28V
32V
Psat vs Supply Current
45
45
40
40
Psat (dBm)
P3dB (dBm)
11
FREQUENCY (GHz)
P3dB vs Supply Current
35
30
35
30
25
25
2
5
8
11
14
17
FREQUENCY (GHz)
425 mA
3
35
30
25
Psat (dBm)
Amplifiers - Linear & Power - SMT
P3dB vs. Temperature
20
2
5
8
11
14
17
20
FREQUENCY (GHz)
850 mA
425 mA
850 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1087F10
v03.1014
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
47
8
45
IP3 (dBm)
POWER GAIN (dB)
10
6
4
43
41
39
2
37
0
2
5
8
11
14
17
2
20
5
8
P3dB
Psat
+25 C
14
17
20
+85 C
-40 C
Output IP3 vs. Supply Current,
Pout/tone = +28 dBm
47
47
45
45
IP3 (dBm)
IP3 (dBm)
Output IP3 vs. Supply Voltage,
Pout/tone = +28 dBm
43
41
39
43
41
39
37
37
2
5
8
11
14
17
20
2
5
FREQUENCY (GHz)
24V
8
11
14
17
20
FREQUENCY (GHz)
28V
425 mA
32V
Output IM3 @ Vdd= +24V
850 mA
Output IM3 @ Vdd= +28V
70
70
60
60
50
50
IM3 (dBc)
IM3 (dBc)
11
FREQUENCY (GHz)
FREQUENCY (GHz)
Amplifiers - Linear & Power - SMT
Output IP3 vs. Temperature,
Pout/tone = +28 dBm
Power Gain vs. Frequency
40
40
30
30
20
20
10
10
15
18
21
24
27
30
33
15
18
21
Pout/tone(dBm)
4 GHz
6 GHz
12 GHz
24
27
30
33
Pout/TONE (dBm)
16 GHz
18 GHz
4 GHz
6 GHz
12 GHz
16 GHz
18 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC1087F10
v03.1014
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Output IM3 @ Vdd= +32V
Power Compression @ 3 GHz
IM3 (dBc)
50
40
30
20
10
40
900
35
875
30
850
25
825
20
800
15
775
10
750
5
725
700
0
15
18
21
24
27
30
33
3
Pout/TONE (dBm)
6
9
12
15
18
21
24
27
30
33
INPUT POWER (dBm)
4 GHz
6 GHz
12 GHz
16 GHz
18 GHz
Pout
Gain
PAE
Idd
Power Compression @ 19 GHz
1300
40
1200
35
1225
35
1125
30
1150
30
1050
25
1075
25
975
20
1000
20
900
15
925
15
825
10
850
10
750
5
775
5
675
Pout(dBm), GAIN(dB), PAE(%)
40
700
0
3
6
9
12
15
18
21
24
27
30
600
0
33
2
5
8
11
INPUT POWER (dBm)
Pout
14
17
20
23
26
29
32
INPUT POWER (dBm)
Gain
PAE
Pout
Gain
PAE
Idd
Gain & Power vs.
Supply Current @ 18 GHz
Gain & Power vs.
Supply Voltage @ 10 GHz
45
45
Gain (dB), P3dB (dBm), Psat (dBm)
Gain (dB), P3dB (dBm), Psat (dBm)
Idd (mA)
Pout(dBm), GAIN(dB), PAE(%)
Power Compression @ 10 GHz
Idd
40
35
30
25
20
15
10
5
0
40
35
30
25
20
15
10
5
0
24
26
28
30
32
425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850
Idd (mA)
Vdd (V)
GAIN
5
Idd (mA)
Pout(dBm), GAIN(dB), PAE(%)
60
Idd (mA)
Amplifiers - Linear & Power - SMT
70
P3dB
Psat
GAIN
P3dB
Psat
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1087F10
v03.1014
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Reverse Isolation vs. Temperature
Second Harmonics vs. Temperature [1]
ISOLATION (dB)
-10
-20
-30
-40
70
60
50
40
30
20
10
0
-50
2
5
8
11
14
17
2
20
5
8
FREQUENCY (GHz)
+25 C
+85 C
+25 C
-40 C
Second Harmonics vs. Supply Voltage [1]
14
17
20
+85 C
-40 C
Second Harmonics vs. Pin
80
80
70
70
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
11
FREQUENCY(GHz)
60
50
40
30
20
10
60
50
40
30
20
10
0
0
2
5
8
11
14
17
20
2
5
8
FREQUENCY(GHz)
24V
11
14
17
20
FREQUENCY(GHz)
28V
+6 dBm
+12 dBm
+18 dBm
32V
+24 dBm
+30 dBm
Amplifiers - Linear & Power - SMT
80
SECOND HARMONIC (dBc)
0
Power Dissipation
POWER DISSIPATION (W)
30
25
20
15
10
2
6
10
14
18
22
26
30
34
INPUT POWER (dBm)
2 GHz
6 GHz
11 GHz
16 GHz
20 GHz
[1] Second Harmonic data Pin=12 dBm.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC1087F10
v03.1014
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Typical Supply Current vs. Vdd
Amplifiers - Linear & Power - SMT
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+32 Vdc
Vdd (V)
Idd (mA)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)
-8 to 0 Vdc
+24
850
+34 dBm
+28
850
Channel Temperature
225 °C
+32
850
Maximum Pdiss (T= 85 °C)
(derate 236 mW/°C above 85
°C)
33 W
Thermal Resistance
(channel to flange bottom)
4.24 °C/W
Maximum Forward
Gate Current (mA)
11 mA
Maximum VSWR
[1]
Adjust Vgg to achieve Idd = 850 mA
6:1
Storage Temperature
-65 to 150°C
Operating Temperature
-55 to 85 °C
[2]
[1] Restricted by maximum power dissipation.
[2] This device is not surface mountable and is not intended nor
suitable to be used in a solder reflow process.
This device must not be exposed to ambient temperatures above
+150°C.
Amplifier Turn-on Procedure:
1.) Set Vgg to -5V.
2.) Set Vdd to +28V.
3.) Ramp gate voltage until quiescent drain current =
850 mA.
4.) Apply RF input power.
Amplifier Turn-off Procedure:
1.) Remove RF input power.
2.) Set Vgg to -5V.
3.) Set Vdd to 0V.
4.) Set Vgg to 0V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
7
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1087F10
v03.1014
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Amplifiers - Linear & Power - SMT
Outline Drawing
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking [1]
HMC1087F10
Copper 15 Tungston 85
NiAu
N/A [2]
H1087
XXXX
[1] 4-Digit lot number XXXX
[2] This device is not rated for Moisture Sensitivity Level. The HMC1087F10 is a non-hermetic, air cavity device which is not surface mountable
and is not intended nor suitable to be used in a solder reflow process.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8
HMC1087F10
v03.1014
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Amplifiers - Linear & Power - SMT
Pin Descriptions
9
Pin Number
Function
Description
1
Vgg
Gate control voltage.
2, 4, 5, 7,
9, 10
NC
These pins are not connected internally, however all data
shown was measured with these pins connected to RF/
DC ground externally.
3
RFIN
This pin is DC coupled and matched to 50 Ohms.
6
Vdd
Drain bias.
8
RFOUT
This pad is RF coupled and matched to 50 Ohms.
Package
Base
GND
The package base must be mounted to a suitable heat
sink for RF & DC ground. Recommended mounting
screws are #0-80 socket cap screws.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1087F10
v03.1014
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Amplifiers - Linear & Power - SMT
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
10
HMC1087F10
v03.1014
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Amplifiers - Linear & Power - SMT
Evaluation PCB [1]
Evaluation Order Information
Item
Contents
Part Number
Evaluation PCB Only
HMC1087F10 Evaluation PCB
EVAL01-HMC1087F10 [2]
[2] Reference this number when ordering Evaluation PCB Only
List of Materials for Evaluation PCB EVAL01-HMC1087F10
Item
Description
J2, J3
SRI K Connector
J1
DC Connector
J4, J5
Preform jumpers
C1 - C6
1 uF Capacitor, 0602 Pkg.
C7 - C8
10 uF Capacitor, 1210 Pkg.
U1
HMC1087F10
PCB [1]
600-00619-00 Evaluation PCB.
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from Hittite upon request.
[1] The universal evaluation board shown above is designed to support multible products, please refer to Application Circuit herein for
required external components.
11
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1087F10
v03.1014
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Amplifiers - Linear & Power - SMT
Notes
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
12