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HMC1086F10
v04.0714
Amplifiers - Linear & Power - SMT
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Typical Applications
Features
The HMC1086F10 is ideal for:
High Psat: +44.5 dBm
• Test Instrumentation
Power Gain at Psat: 11 dB
• General Communications
High Output IP3: +46 dBm
• Radar
Small Signal Gain: 23 dB
• EW/ECM
Supply Voltage: Vdd = +28V @ 1100 mA
50 Ohm Matched Input/Output
10-Lead Flange Mount Package
Functional Diagram
General Description
The HMC1086F10 is a 25W Gallium Nitride (GaN)
MMIC Power Amplifier which operates between
2 and 6 GHz, and is provided in a 10-lead flange
mount package. The amplifier typically provides
23 dB of small signal gain, +44.5 dBm saturated
output power, and delivers +46 dBm output IP3 at
+33 dBm output power per tone. The amplifier draws
1100 mA quiescent current from a +28V DC supply.
The RF I/Os are DC blocked and matched to 50 Ohms
for ease of use.
Electrical Specifications, TA = +25° C, Vgg = Vgg1 = Vgg2, Vdd = Vdd1 = Vdd2 = +28V,
Idd = 1100 mA [1]
Parameter
Min.
Frequency Range
Typ.
Max.
Min.
2-4
Small Signal Gain
20
Gain Flatness
Gain Variation Over Temperature
23
Typ.
4-6
21
24
Max.
Units
GHz
dB
±1
±0.5
dB
0.03
0.03
dB/ °C
dB
Input Return Loss
15
17
Output Return Loss
12
12
dB
Output Power for 4dB Compression (P4dB)
41
41
dBm
Power Gain for 4dB Compression (P4dB)
Saturated Output Power (Psat)
[2]
20
20
dB
44.5
44.5
dBm
dBm
46
46
Power Added Efficiency (PAE)
35
32
%
Total Supply Current (Id1 + Id2)
1100
1100
mA
Output Third Order Intercept (IP3)
[1] Adjust Vgg between -8 to 0V to achieve Idd = 1100 mA typical.
[2] Measurement taken at Pout / tone = +33 dBm.
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1086F10
v04.0714
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Gain & Return Loss
Gain vs. Temperature
30
25
10
Gain (dB)
Response (dB)
20
0
-10
-20
20
15
-30
-40
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
10
1.5
7.5
2
2.5
3
S21
3.5
4
4.5
5
5.5
6
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
S11
25 C
S22
85 C
-40 C
Input Return Loss vs. Temperature
Gain vs. Vdd
0
30
-5
-10
Return Loss (dB)
Gain (dB)
25
20
-15
-20
-25
-30
15
-35
10
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
-40
1.5
6.5
2
2.5
3
24V
3.5
4
4.5
5
5.5
6
6.5
FREQUENCY (GHz)
FREQUENCY (GHz)
28V
25 C
32V
Output Return Loss vs. Temperature
85 C
-40 C
Amplifiers - Linear & Power - SMT
30
Pout vs. Frequency
0
50
-2
45
-6
Pout (dBm)
Return Loss (dB)
-4
-8
-10
-12
40
35
-14
30
-16
-18
-20
1.5
25
2
2.5
3
3.5
4
4.5
5
5.5
6
85 C
2
3
4
5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
25 C
6.5
-40 C
P1dB
P4dB
Psat
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC1086F10
v04.0714
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
50
50
45
45
P4dB (dBm)
P4dB (dBm)
P4dB vs. Supply Voltage
40
35
40
35
30
30
2
3
4
5
6
2
3
FREQUENCY (GHz)
+25 C
+85 C
24V
-40 C
45
45
Psat (dBm)
50
40
35
6
28V
32V
40
35
30
30
2
3
4
5
6
2
3
FREQUENCY (GHz)
+25 C
4
5
6
FREQUENCY (GHz)
+85 C
-40 C
24V
28V
32V
Psat vs. Supply Current
50
50
45
45
Psat (dBm)
P4dB (dBm)
5
Psat vs. Supply Voltage
50
P4dB vs. Supply Current
40
35
40
35
30
30
2
3
4
5
6
2
3
FREQUENCY (GHz)
550 mA
3
4
FREQUENCY (GHz)
Psat vs. Temperature
Psat (dBm)
Amplifiers - Linear & Power - SMT
P4dB vs. Temperature
1100 mA
4
5
6
FREQUENCY (GHz)
1650 mA
550 mA
1100 mA
1650 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1086F10
v04.0714
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Output IP3 vs. Temperature,
Pout/tone = +33 dBm
Power Gain vs. Frequency
30
48
20
IP3 (dBm)
POWER GAIN (dB)
25
15
46
44
10
42
5
40
0
2
3
4
5
6
2
3
4
P4dBm
Psat
+25 C
6
+85 C
-40 C
Output IP3 vs. Supply Current,
Pout/tone = +33 dBm
50
50
48
48
IP3 (dBm)
IP3 (dBm)
Output IP3 vs. Supply Voltage,
Pout/tone = +33 dBm
46
44
42
46
44
42
40
40
2
3
4
5
6
2
3
4
FREQUENCY (GHz)
24V
5
6
FREQUENCY (GHz)
28V
32V
550 mA
Output IM3 @ Vdd= +24V
1100 mA
1650 mA
Output IM3 @ Vdd= +28V
50
50
40
40
IM3 (dBc)
IM3 (dBc)
5
FREQUENCY (GHz)
FREQUENCY (GHz)
Amplifiers - Linear & Power - SMT
50
30
20
30
20
10
10
26
28
30
32
34
36
38
40
26
28
30
Pout/tone(dBm)
2 GHz
3 GHz
4 GHz
32
34
36
38
40
Pout/TONE (dBm)
5 GHz
6 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC1086F10
v04.0714
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Output IM3 @ Vdd= +32V
Power Compression @ 2 GHz
Pout(dBm), GAIN(dB), PAE(%)
30
20
10
50
3000
45
2790
40
2580
35
2370
30
2160
25
1950
20
1740
15
1530
10
1320
5
1110
900
0
26
28
30
32
34
36
38
40
5
Pout/TONE (dBm)
7
9
11 13 15 17 19 21 23 25 27 29 31 33
INPUT POWER (dBm)
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
Pout
Gain
PAE
Idd
Power Compression @ 6 GHz
3300
50
3000
45
3060
45
2790
40
2820
40
2580
35
2580
35
2370
30
2340
30
2160
25
2100
25
1950
20
1860
20
1740
15
1620
15
1530
10
1380
10
1320
5
1140
5
1110
0
900
5
7
9
Pout(dBm), GAIN(dB), PAE(%)
50
900
0
11 13 15 17 19 21 23 25 27 29 31 33
5
7
9
11 13 15 17 19 21 23 25 27 29 31 33
INPUT POWER (dBm)
Pout
INPUT POWER (dBm)
Gain
PAE
Pout
Gain
Idd
Idd
Gain & Power vs.
Supply Voltage @ 4 GHz
Gain & Power vs.
Supply Current @ 4 GHz
PAE
50
Gain (dB), P4dB (dBm), Psat (dBm)
Gain (dB), P4dB (dBm), Psat (dBm)
Idd (mA)
Pout(dBm), GAIN(dB), PAE(%)
Power Compression @ 4 GHz
50
45
40
35
30
25
20
45
40
35
30
25
20
24
26
28
30
32
550
650
750
850
950 1050 1150 1250 1350 1450 1550 1650
Idd (mA)
Vdd (V)
GAIN(dB)
P4dB(dBm)
5
Idd (mA)
IM3 (dBc)
40
Idd (mA)
Amplifiers - Linear & Power - SMT
50
Psat(dBm)
GAIN(dB)
P4dB(dBm)
Psat(dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1086F10
v04.0714
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
90
-10
80
SECOND HARMONIC (dBc)
0
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
-80
70
60
50
40
30
20
10
-90
0
2
3
4
5
6
2
3
4
FREQUENCY (GHz)
+25 C
+85 C
+25 C
-40 C
Second Harmonics vs. Supply Voltage
6
+85 C
-40 C
Second Harmonics vs. Pin
90
90
80
80
SECOND HARMONIC (dBc)
SECOND HARMONIC (dBc)
5
FREQUENCY(GHz)
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
2
3
4
5
6
2
3
4
FREQUENCY(GHz)
24V
28V
5
6
FREQUENCY(GHz)
+9 dBm
+15 dBm
+21 dBm
32V
+27 dBm
+33 dBm
Amplifiers - Linear & Power - SMT
Second Harmonics vs. Temperature
Reverse Isolation vs. Temperature
Power Dissipation
60
POWER DISSIPATION (W)
55
50
45
40
35
30
25
20
6
9
12
15
18
21
24
27
30
33
INPUT POWER (dBm)
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC1086F10
v04.0714
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Typical Supply Current vs. Vdd
Absolute Maximum Ratings
Amplifiers - Linear & Power - SMT
Drain Bias Voltage (Vdd)
+32 Vdc
Vdd (V)
Idd (mA)
+24
1100
Gate Bias Voltage (Vgg)
-8 to 0 Vdc
RF Input Power (RFIN)
+33 dBm
+28
1100
Channel Temperature
225 °C
+32
1100
Maximum Pdiss (T = 85 °C)
(derate 432 mW/°C above 85 °C)
60.5W
Thermal Resistance
(channel to flange bottom)
2.31 °C/W
Maximum Forward
Gate Current (mA)
11 mA
2.) Set Vdd to +28V.
6:1
3.) Ramp gate voltage until quiescent drain current =
1100 mA.
Maximum VSWR
[1]
Adjust Vgg to achieve Idd = 1100 mA
Amplifier Turn-on Procedure:
1.) Set Vgg to -5V.
Storage Temperature
-65 to 150 °C
Operating Temperature
-55 to 85 °C
[2]
4.) Apply RF input power.
[1] Restricted by maximum power dissipation.
[2] This device is not surface mountable and is not intended nor suitable to be
used in a solder reflow process.
This device must not be exposed to ambient temperatures above +150°C.
Amplifier Turn-off Procedure:
1.) Remove RF input power.
2.) Set Vgg to -5V.
3.) Set Vdd to 0V.
4.) Set Vgg to 0V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
7
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1086F10
v04.0714
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Amplifiers - Linear & Power - SMT
Outline Drawing
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
Package Marking [1]
HMC1086F10
Copper 15 Tungston 85
NiAu
N/A [2]
H1086
XXXX
[1] 4-Digit lot number XXXX
[2] This device is not rated for Moisture Sensitivity Level. The HMC1086F10 is a non-hermetic, air cavity device which is not surface mountable
and is not intended nor suitable to be used in a solder reflow process.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8
HMC1086F10
v04.0714
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Amplifiers - Linear & Power - SMT
Pin Descriptions
9
Pin Number
Function
Description
1, 5
Vgg2
Gate control voltage for second stage.
2, 4
Vgg1
Gate control voltage for first stage.
3
RFIN
This pin is DC coupled and matched to 50 Ohms.
6, 10
Vdd1,2
Drain bias for first and second stage
7, 9
NC
These pins are not connected internally, however all data
shown was measured with these pins connected to
RF/DC ground externally.
8
RFOUT
This pad is RF coupled and matched to 50 Ohms.
Package
Base
GND
The package base must be mounted to a suitable heat
sink for RF & DC ground. Recommended mounting
screws are #0-80 socket cap screws.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1086F10
v04.0714
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Amplifiers - Linear & Power - SMT
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
10
HMC1086F10
v04.0714
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Amplifiers - Linear & Power - SMT
Evaluation PCB
Evaluation Order Information
Item
Contents
Part Number
Evaluation PCB
HMC1086F10 Evaluation PCB
EVAL01-HMC1086F10 [1]
[1] Reference this number when ordering Evaluation PCB
List of Materials for Evaluation PCB EVAL01-HMC1086F10
Item
Description
J2, J3
SRI K Connector
J1
DC Connector
J4, J5
Preform jumpers
C1 - C6
1 uF Capacitor, 0602 Pkg.
C7 - C8
10 uF Capacitor, 1210 Pkg.
U1
HMC1086F10
PCB [1]
600-00619-00 Evaluation PCB
[1] Circuit Board Material: Rogers 4350 or Arlon 25FR
11
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used
to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC1086F10
v04.0714
25 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 6 GHz
Amplifiers - Linear & Power - SMT
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
12