Dual, Ultralow Distortion, Ultralow Noise Op Amp AD8599-EP Enhanced Product PIN CONFIGURATION Low voltage noise density: 1.15 nV/√Hz at 1 kHz Low distortion: −120 dB total harmonic distortion plus noise (THD + N) at 1 kHz Peak-to-peak noise: 76 nV p-p at 0.1 Hz to 10 Hz Slew rate: 15 V/μs at VSY = ±15 V Wide gain bandwidth product: 10 MHz Supply current per amplifier: 5.0 mA typical at VSY = ±15 V Low offset voltage: 10 μV typical at VSY = ±15 V Common-mode rejection ratio (CMRR): 120 dB minimum Unity-gain stable Dual-supply operation: ±15 V OUT A 1 –IN A 2 AD8599-EP +IN A 3 TOP VIEW (Not to Scale) –V 4 8 +V 7 OUT B 6 –IN B 5 +IN B 13065-001 FEATURES Figure 1. ENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard) Extended temperature range: −55°C to +125°C Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request APPLICATIONS Professional audio preamplifiers ATE/precision testers Imaging systems Medical/physiological measurements Precision detectors/instruments Precision data conversions GENERAL DESCRIPTION The AD8599-EP is a very low noise, low distortion op amp ideal for use as a preamplifier. The low noise of 1.15 nV/√Hz and low harmonic distortion of −120 dB (or better) at audio bandwidths give the AD8599-EP the wide dynamic range necessary for preamplifiers in audio, medical, and instrumentation applications. The excellent slew rate of 15 V/μs and 10 MHz gain bandwidth product make the AD8599-EP highly suitable for medical applications. The low distortion and fast settling time make the AD8599-EP ideal for buffering high resolution data converters. Rev. 0 The AD8599-EP is available in an 8-lead SOIC package. It is specified over a −55°C to +125°C temperature range. Additional application and technical information can be found in the AD8599 data sheet. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2015 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com AD8599-EP Enhanced Product TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ............................................................4 Enhanced Product Features ............................................................ 1 Thermal Resistance .......................................................................4 Applications ....................................................................................... 1 Power Sequencing .........................................................................4 Pin Configuration ............................................................................. 1 ESD Caution...................................................................................4 General Description ......................................................................... 1 Typical Performance Characteristics ..............................................5 Revision History ............................................................................... 2 Outline Dimensions ..........................................................................8 Specifications..................................................................................... 3 Ordering Guide .............................................................................8 REVISION HISTORY 8/15—Revision 0: Initial Version Rev. 0 | Page 2 of 8 Enhanced Product AD8599-EP SPECIFICATIONS VSY = ±15 V, VCM = 0 V, VO = 0 V, TA = 25°C, unless otherwise specified. Table 1. Parameter INPUT CHARACTERISTICS Offset Voltage Symbol Test Conditions/Comments Min VOS Offset Voltage Drift Input Bias Current ΔVOS/ΔT IB Input Offset Current IOS −55°C ≤ TA ≤ +125°C −55°C ≤ TA ≤ +125°C Typ Max Unit 10 120 300 2.5 200 350 200 350 +12.5 µV µV µV/°C nA nA nA nA V dB dB dB dB 0.8 25 −55°C ≤ TA ≤ +125°C 50 −55°C ≤ TA ≤ +125°C Input Voltage Range Common-Mode Rejection Ratio IVR CMRR Large Signal Voltage Gain AVO Input Capacitance Differential Capacitance Common-Mode Capacitance OUTPUT CHARACTERISTICS Output Voltage High Low Output Short-Circuit Current Closed-Loop Output Impedance POWER SUPPLY Power Supply Rejection Ratio Supply Current per Amplifier −12.5 V ≤ VCM ≤ +12.5 V −55°C ≤ TA ≤ +125°C RL ≥ 600 Ω, VO = −11 V to +11 V −55°C ≤ TA ≤ +125°C −12.5 120 115 110 106 CDIFF CCM VOH VOL ISC ZOUT PSRR RL = 600 Ω −55°C ≤ TA ≤ +125°C RL = 2 kΩ −55°C ≤ TA ≤ +125°C RL = 600 Ω −55°C ≤ TA ≤ +125°C RL = 2 kΩ −55°C ≤ TA ≤ +125°C 13.1 12.8 13.5 13.2 ISY 116 12.1 5.1 pF pF 13.4 V V V V V V V V mA Ω 13.7 −13.2 −13.5 120 118 140 5.0 −55°C ≤ TA ≤ +125°C DYNAMIC PERFORMANCE Slew Rate Settling Time Gain Bandwidth Product Phase Margin NOISE PERFORMANCE Peak-to-Peak Noise Voltage Noise Density SR tS GBP ΦM en p-p en Correlated Current Noise Uncorrelated Current Noise Total Harmonic Distortion + Noise Channel Separation THD + N CS AVO = −1, RL = 2 kΩ AVO = 1, RL = 2 kΩ To 0.01%, step = 10 V 16 15 2 10 65 0.1 Hz to 10 Hz f = 1 kHz f = 10 Hz f = 1 kHz f = 10 Hz f = 1 kHz f = 10 Hz G = 1, RL ≥ 1 kΩ, f = 1 kHz, VRMS = 3 V f = 10 kHz 76 1.07 Rev. 0 | Page 3 of 8 −12.9 −12.8 −13.4 −13.3 ±52 5 At 1 MHz, AVO = 1 VSY = ±18 V to ±4.5 V −55°C ≤ TA ≤ +125°C 135 1.9 4.3 2.3 5.3 −120 −120 5.7 6.75 dB dB mA mA V/µs V/µs µs MHz Degrees nV p-p 1.15 1.5 nV/√Hz nV/√Hz pA/√Hz pA/√Hz pA/√Hz pA/√Hz dB dB AD8599-EP Enhanced Product ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE Table 2. Parameter Supply Voltage Input Voltage Differential Input Voltage1 Output Short-Circuit to GND Storage Temperature Range Operating Temperature Range Lead Temperature (Soldering 60 sec) Junction Temperature 1 Rating ±18 V −V ≤ VIN ≤ +V ±1 V Indefinite −65°C to +150°C −55°C to +125°C 300°C 150°C If the differential input voltage exceeds 1 V, limit the current to 5 mA. Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. θJA is specified with the device soldered on a circuit board with its exposed paddle soldered to a pad (if applicable) on a 4-layer JEDEC standard PCB with zero air flow. Table 3. Package Type 8-Lead SOIC (R-8) θJA 120 θJC 36 Unit °C/W POWER SEQUENCING Apply the op amp supplies simultaneously. The op amp supplies must be stable before any input signals are applied. In any case, the input current must be limited to 5 mA. ESD CAUTION Rev. 0 | Page 4 of 8 Enhanced Product AD8599-EP TYPICAL PERFORMANCE CHARACTERISTICS 250 250 VSY = ±5V –55°C ≤ TA ≤ +125°C 200 150 150 100 MEAN 0 MEAN – 3σ –50 50 MEAN 0 –50 –100 –100 –150 –150 –200 –200 –250 –75 –50 –25 0 25 75 50 100 125 TEMPERATURE (°C) MEAN – 3σ –250 –75 –25 –50 25 0 50 75 100 125 TEMPERATURE (°C) Figure 2. Input Offset Voltage (VOS) Distribution, VSY = ±5 V Figure 5. Input Offset Voltage (VOS) Distribution, VSY = ±15 V 35 30 VSY = ±5V –55°C ≤ TA ≤ +125°C 30 VSY = ±15V –55°C ≤ TA ≤ +125°C NUMBER OF AMPLIFIERS 25 25 20 15 10 20 15 10 –2.0 –1.8 –1.6 –1.4 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 13065-102 –2.0 –1.8 –1.6 –1.4 –1.2 –1.0 –0.8 –0.6 –0.4 –0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 TCVOS (µV/°C) 0 TCVOS (µV/°C) Figure 3. Input Offset Voltage Drift (TCVOS) Distribution, VSY = ±5 V 13065-105 5 5 0 13065-104 VOS (µV) 50 13065-101 VOS (µV) MEAN + 3σ MEAN + 3σ 100 NUMBER OF AMPLIFIERS VSY = ±15V –55°C ≤ TA ≤ +125°C 200 Figure 6. Input Offset Voltage Drift (TCVOS) Distribution, VSY = ±15 V 8 7 +125°C 6 6 VSY = ±15V 5 VSY = ±5V +85°C +25°C 5 ISY (mA) –40°C 4 4 –55°C 3 3 2 2 0 –75 –50 –25 0 25 50 75 100 TEMPERATURE (°C) 125 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VSY (V) Figure 4. Supply Current (ISY) vs. Temperature Figure 7. Supply Current (ISY) vs. Supply Voltage (VSY) Rev. 0 | Page 5 of 8 13065-106 1 1 13065-103 ISY (mA) 7 AD8599-EP Enhanced Product 250 250 VSY = ±15V 200 150 150 100 100 50 50 0 0 –50 –50 –100 –100 –150 –150 –200 –200 –250 –75 –25 –50 25 0 50 75 125 100 TEMPERATURE (°C) –250 –75 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) Figure 8. Input Bias Current (IB) vs. Temperature, VSY = ±5 V 13065-110 IB (nA) 200 13065-107 IB (nA) VSY = ±5V Figure 11. Input Bias Current (IB) vs. Temperature, VSY = ±15 V 60 300 250 200 –55°C 50 –40°C 40 IB (nA) 100 50 IOS (nA) 150 +25°C 0 –50 +85°C –100 +125°C VSY = ±5V 30 VSY = ±15V 20 –150 10 –200 –8 –6 –4 –2 0 2 4 6 8 10 12 VCM (V) 0 –75 13065-108 –300 –12 –10 –50 0 25 50 75 100 125 TEMPERATURE (°C) Figure 12. Input Offset Current (IOS) vs. Temperature Figure 9. Input Bias Current (IB) vs. Common-Mode Voltage (VCM) 120 114 VSY = ±15V VSY = ±5V RL = 2kΩ 112 RL = 2kΩ 118 RL = 600Ω 116 110 RL = 600Ω AVO (dB) AVO (dB) –25 13065-111 –250 108 106 114 104 112 –50 –25 0 25 50 TEMPERATURE (°C) 75 100 125 110 –75 13065-109 100 –75 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) Figure 13. Large Signal Voltage Gain (AVO) vs. Temperature Figure 10. Large Signal Voltage Gain (AVO) vs. Temperature, VSY = ±5 V Rev. 0 | Page 6 of 8 13065-112 102 Enhanced Product AD8599-EP 100 100 VSY = ±5V VSY = ±15V 80 80 +ISC 60 40 40 ISC (mA) 20 0 20 0 –20 –20 –40 –40 –ISC –ISC –60 –60 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) –80 –75 13065-113 –80 –75 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) Figure 14. Output Short-Circuit Current (ISC) vs. Temperature, VSY = ±5 V 13065-116 ISC (mA) +ISC 60 Figure 17. Output Short-Circuit Current (ISC) vs. Temperature, VSY = ±15 V 2.5 2.5 VSY = ±5V VSY = ±15V 2.0 2.0 1.5 VCC – VOH (V) RL = 600Ω RL = 2kΩ 1.0 0.5 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) 0 –75 13065-114 0 –75 RL = 2kΩ 1.0 –50 –25 0 25 50 75 Figure 15. Output Saturation Voltage (VCC − VOH) vs. Temperature, VSY = ±5 V 0 VSY = ±5V VSY = ±15V –0.5 –0.5 VEE – VOL (V) VEE – VOL (V) 125 Figure 18. Output Saturation Voltage (VCC − VOH) vs. Temperature, VSY = ±15 V 0 –1.0 RL = 2kΩ RL = 600Ω –1.5 –2.0 –1.0 RL = 2kΩ –1.5 RL = 600Ω –2.0 –50 –25 0 25 50 TEMPERATURE (°C) 75 100 125 –2.5 –75 13065-115 –2.5 –75 100 TEMPERATURE (°C) 13065-117 0.5 1.5 –50 –25 0 25 50 TEMPERATURE (°C) Figure 16. Output Saturation Voltage (VEE − VOL) vs. Temperature, VSY = ±5 V 75 100 125 13065-118 VCC – VOH (V) RL = 600Ω Figure 19. Output Saturation Voltage (VEE − VOL) vs. Temperature, VSY = ±15 V Rev. 0 | Page 7 of 8 AD8599-EP Enhanced Product OUTLINE DIMENSIONS 5.00 (0.1968) 4.80 (0.1890) 8 1 5 6.20 (0.2441) 5.80 (0.2284) 4 1.27 (0.0500) BSC 0.25 (0.0098) 0.10 (0.0040) COPLANARITY 0.10 SEATING PLANE 0.50 (0.0196) 0.25 (0.0099) 1.75 (0.0688) 1.35 (0.0532) 0.51 (0.0201) 0.31 (0.0122) 45° 8° 0° 0.25 (0.0098) 0.17 (0.0067) 1.27 (0.0500) 0.40 (0.0157) COMPLIANT TO JEDEC STANDARDS MS-012-AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS (IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN. 012407-A 4.00 (0.1574) 3.80 (0.1497) Figure 20. 8-Lead Standard Small Outline Package [SOIC_N] Narrow Body (R-8) Dimensions shown in millimeters and (inches) ORDERING GUIDE Model1 AD8599TRZ-EP AD8599TRZ-EP-R7 1 Temperature Range −55°C to +125°C −55°C to +125°C Package Description 8-Lead Standard Small Outline Package [SOIC_N] 8-Lead Standard Small Outline Package [SOIC_N] Z = RoHS Complaint Part. ©2015 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D13065-0-8/15(0) Rev. 0 | Page 8 of 8 Package Option R-8 R-8