Known Good Die
Precision, Low Noise, CMOS, Rail-to-Rail,
Input/Output Operational Amplifier
AD8608-KGD
FEATURES
GENERAL DESCRIPTION
Low offset voltage: 65 µV maximum
Low input bias currents: 1 pA maximum
Low noise: 8 nV/√Hz
Wide bandwidth: 10 MHz
High open-loop gain: 1000 V/mV
Unity gain stable
Single-supply operation: 2.7 V to 5.5 V
Known good die (KGD): these die are fully guaranteed to
data sheet specifications
The AD8608-KGD1 is a single, rail-to-rail input and output,
single-supply amplifier that features very low offset voltage, low
input voltage and current noise, and wide signal bandwidth.
The AD8608-KGD uses the Analog Devices, Inc. patented
DigiTrim® trimming technique, which achieves superior
precision without laser trimming.
APPLICATIONS
Photodiode amplification
Battery-powered instrumentation
Multipole filters
Sensors
Barcode scanners
Audio
The combination of low offsets, low noise, very low input bias
currents, and high speed makes this amplifier useful in a
wide variety of applications. Filters, integrators, photodiode
amplifiers, and high impedance sensors all benefit from the
combination of performance features. Audio and other ac
applications benefit from the wide bandwidth and low
distortion. Applications for this amplifier include optical
control loops, portable and loop-powered instrumentation,
and audio amplification for portable devices.
The AD8608-KGD is specified over the extended industrial
temperature range (−40°C to +125°C).
Additional application and technical information can be found
in the AD8605/AD8606/AD8608 data sheet.
1
Protected by U.S. Patent No. 5,969,657.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
AD8608-KGD
Known Good Die
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ............................................................5
Applications ....................................................................................... 1
ESD Caution...................................................................................5
General Description ......................................................................... 1
Pin Configuration and Function Descriptions..............................6
Revision History ............................................................................... 2
Outline Dimensions ..........................................................................7
Specifications..................................................................................... 3
Die Specifications and Assembly Recommendations ..............7
5 V Electrical Specifications ........................................................ 3
Ordering Guide .............................................................................7
2.7 V Electrical Specifications..................................................... 4
REVISION HISTORY
4/15—Revision 0: Initial Version
Rev. 0 | Page 2 of 7
Known Good Die
AD8608-KGD
SPECIFICATIONS
5 V ELECTRICAL SPECIFICATIONS
VS = 5 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Symbol
Conditions
VOS
VS = 3.5 V, VCM = 2.7 V
VS = 5 V, VCM = 0 V to 5 V
−40°C < TA < +125°C
Min
IB
Typ
Max
Unit
20
80
75
300
750
1
300
0.5
75
5
µV
µV
µV
pA
pA
pA
pA
V
dB
dB
V/mV
µV/°C
0.2
−40°C < TA < +125°C
Input Offset Current
IOS
0.1
−40°C < TA < +125°C
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
INPUT CAPACITANCE
Common-Mode Input Capacitance
Differential Input Capacitance
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Output Current
Closed-Loop Output Impedance
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Unity Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Peak-to-Peak Noise
Voltage Noise Density
Current Noise Density
CMRR
AVO
ΔVOS/ΔT
VCM = 0 V to 5 V
−40°C < TA < +125°C
RL = 2 kΩ, VO = 0.5 V to 4.5 V
−40°C < TA < +125°C
0
85
75
300
CCOM
CDIFF
VOH
VOL
IOUT
ZOUT
PSRR
ISY
IL = 1 mA
IL = 10 mA
−40°C < TA < +125°C
IL = 1 mA
IL= 10 mA
−40°C < TA < +125°C
4.96
4.7
4.6
pF
pF
4.98
4.79
V
V
V
mV
mV
mV
mA
Ω
40
210
290
±80
1
77
70
92
90
1
SR
tS
GBP
ΦM
RL = 2 kΩ, CL = 16 pF
To 0.01%, 0 V to 2 V step, AV = 1
5
<1
10
65
en p-p
en
en
in
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
f = 1 kHz
2.3
8
6.5
0.01
Rev. 0 | Page 3 of 7
6.0
8.8
2.6
20
170
f = 1 MHz, AV = 1
VS = 2.7 V to 5.5 V
−40°C < TA < +125°C
IOUT = 0 mA
−40°C < TA < +125°C
100
90
1000
1.5
1.2
1.4
dB
dB
mA
mA
V/µs
µs
MHz
Degrees
3.5
12
µV p-p
nV/√Hz
nV/√Hz
pA/√Hz
AD8608-KGD
Known Good Die
2.7 V ELECTRICAL SPECIFICATIONS
VS = 2.7 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2.
Parameter
INPUT CHARACTERISTICS
Offset Voltage
Input Bias Current
Symbol
Conditions
VOS
VS = 3.5 V, VCM = 2.7 V
VS = 2.7 V, VCM = 0 V to 2.7 V
−40°C < TA < +125°C
Min
IB
Typ
Max
20
80
75
300
750
1
300
0.5
75
2.7
0.2
−40°C < TA < +125°C
Input Offset Current
IOS
0.1
−40°C < TA < +125°C
Input Voltage Range
Common-Mode Rejection Ratio
Large Signal Voltage Gain
Offset Voltage Drift
INPUT CAPACITANCE
Common-Mode Input Capacitance
Differential Input Capacitance
OUTPUT CHARACTERISTICS
Output Voltage High
Output Voltage Low
Output Current
Closed-Loop Output Impedance
POWER SUPPLY
Power Supply Rejection Ratio
Supply Current/Amplifier
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Unity Gain Bandwidth Product
Phase Margin
NOISE PERFORMANCE
Peak-to-Peak Noise
Voltage Noise Density
Current Noise Density
CMRR
AVO
ΔVOS/ΔT
VCM = 0 V to 2.7 V
−40°C < TA < +125°C
RL = 2 kΩ, VO = 0.5 V to 2.2 V
−40°C < TA < +125°C
0
80
70
110
CCOM
CDIFF
VOH
VOL
IOUT
ZOUT
PSRR
ISY
IL = 1 mA
−40°C < TA < +125°C
IL = 1 mA
−40°C < TA < +125°C
2.6
2.6
pF
pF
2.66
V
V
mV
mV
mA
Ω
40
50
±30
1.2
77
70
92
90
1.15
SR
tS
GBP
ΦM
RL = 2 kΩ, CL = 16 pF
To 0.01%, 0 V to 1 V step, AV = 1
5
<0.5
9
50
en p-p
en
en
in
f = 0.1 Hz to 10 Hz
f = 1 kHz
f = 10 kHz
f = 1 kHz
2.3
8
6.5
0.01
Rev. 0 | Page 4 of 7
6.0
µV
µV
pA
pA
pA
pA
V
dB
dB
V/mV
µV/°C
8.8
2.6
25
f = 1 MHz, AV = 1
VS = 2.7 V to 5.5 V
−40°C < TA < +125°C
IOUT = 0 mA
−40°C < TA < +125°C
95
85
350
1.5
Unit
1.4
1.5
dB
dB
mA
mA
V/µs
µs
MHz
Degrees
3.5
12
µV p-p
nV/√Hz
nV/√Hz
pA/√Hz
Known Good Die
AD8608-KGD
ABSOLUTE MAXIMUM RATINGS
ESD CAUTION
Table 3.
Parameter
Supply Voltage
Input Voltage
Differential Input Voltage
Output Short-Circuit Duration to GND
Storage Temperature Range
Operating Temperature Range
Junction Temperature Range
Rating
6V
GND to VS
6V
Observe Derating Curves
−65°C to +150°C
−40°C to +125°C
−65°C to +150°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Rev. 0 | Page 5 of 7
AD8608-KGD
Known Good Die
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
14
13
3
12
4A
4B
11B
11A
10
5
6
7 NC
9
NC 8
13166-001
2
Figure 1. Pad Configuration
Table 4. Pad Function Descriptions
Pad
1
2
3
4A
4B
5
6
7
8
9
10
11A
11B
12
13
14
X-Axis (µm)
−490
−749
−749
−703
−703
−749
−749
−683
+688
+749
+749
+749
+749
+749
+749
+597
Y-Axis (µm)
+1239
+1153
+853
+85
−84
−659
−944
−1189
−1189
−916
−631
−122
+47
+813
+1113
+1239
Mnemonic
OUT A
− IN A
+ IN A
V+ Supply
V+ Supply
+ IN B
− IN B
OUTB
OUTC
− IN C
+ IN C
V− Supply
V− Supply
+ IN D
− IN D
OUT D
Pad Type
Single
Single
Single
Double
Double
Single
Single
Single
Single
Single
Single
Double
Double
Single
Single
Single
Rev. 0 | Page 6 of 7
Description
Output Channel A
Inverting Input Channel A
Noninverting Input Channel A
Positive Supply Voltage
Positive Supply Voltage, Double Bond Pad
Noninverting Input Channel B
Inverting Input Channel B
Output Channel B
Output Channel C
Inverting Input Channel C
Noninverting Input Channel C
Negative Supply Voltage
Negative Supply Voltage, Double Bond Pad
Noninverting Input Channel D
Inverting Input Channel D
Output Channel D
Known Good Die
AD8608-KGD
OUTLINE DIMENSIONS
0.305
1.900
1
2
14
13
3
12
4A
11B
4B
11A
10
5
9
NC 8
NC
TOP VIEW
(CIRCUIT SIDE)
SIDE VIEW
0.092 × 0.092
04-13-2015- A
6
7
2.930
Figure 2. 14-Pad Bare Die [CHIP]
(C-14-3)
Dimensions shown in millimeters
DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS
Table 5. Die Specifications
Parameter
Die Size (Maximum)
Bond Pad Composition
Bond Pad (Minimum)
Passivation Type
Thickness
Backside Bias
Scribe Line (Street) Width
ESD
Value
1900 × 2930
AlCu (0.5%)
92 × 92
OxyNitride
305
GND
100 × 150
HBM 4000
Unit
µm
%
µm
Not applicable
µm
Not applicable
µm
V
Table 6. Assembly Recommendations
Assembly Component
Die Attach
Bonding Method
Recommendation
Ablestik 84-1LMIS R4
1 mil gold
ORDERING GUIDE
Model
AD8608-KGD-CHIP
Temperature Range
−40°C to +125°C
Package Description
14-Pad Bare Die [CHIP]
©2015 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D13166-0-4/15(0)
Rev. 0 | Page 7 of 7
Package Option
C-14-3