CCDs AST443, Lecture 5 Stanimir Metchev Administrative • Homework 1 due today 2 Outline • Overview of previous lecture – electromagnetic radiation – telescopes • CCDs 3 Interstellar Extinction Law extinction is highest at ~100 nm = 0.1 µm unimportant for >10 µm 4 source: Kitt Peak National Observatory 5 Photometric Bands: NearInfrared 6 Atmospheric Refraction n (3200 Å) = 1.0003049 n (5400 Å) = 1.0002929 n (10,000 Å) = 1.0002890 differential atmospheric refraction D between 3200 Å and 5400 Å 7 Focusing • focal length (fL), focal plane • object size (α, s) in the focal plane s = fL tan α ≈ fLα • plate/pixel scale P = α/s = 1/fL – Lick observatory 3m • fL = 15.2m, P = 14″/mm • energy per unit detector area Ep ∝ (d / fL)2 8 Fraunhofer Diffraction Circular Aperture • Airy disk • Airy nulls at 1.220, 2.233, 3.238, … λ/d • angular resolution $ #r 2 J1 (2m) ' 2 I(" ) = & ) m % ( #r sin " m= * – θmin ~ 1.22 λ/d • Rayleigh criterion ! • gives 74% drop in intensity between peaks – can do as little as ~80% of that • 3% drop in intensity between peaks (Dawes criterion) 9 Point Spread Function (PSF) 10 Imaging through a Turbulent Atmosphere: Seeing • FWHM of seeing disk – θseeing <1.0″ at a good site • r0: Fried parameter – θseeing = 1.2 λ/r0 – r0 ∝ λ6/5 (cos z)3/5 – θseeing ∝ λ–1/5 • t0: coherence time – t0 = r0 / vwind – vwind ~ several m/s – t0 is tens of milli-sec 11 Adaptive Optics 12 Adaptive Optics 13 Outline • Overview of previous lecture – electromagnetic radiation – telescopes • CCDs 14 Context: Plates, PMTs, CCDs 15 Basic Concept A charge-coupled device (CCD) converts photons to electrons • works thanks to photoelectric effect 16 Basic Concept • • electron-hole pair generation doping: – n-type (electrons) – p-type (holes) – creates additional energy levels within band gap – increases conductivity • silicon – band gap: 1.12 eV (11 300Å) – free-electron energy: 4 eV (3000Å) – 1 photon -> 1 electron 17 Basic Concept • • electron-hole pair generation doping: – n-type (electrons) – p-type (holes) – creates additional energy levels within band gap – increases conductivity • silicon – band gap: 1.12 eV (11 300Å) – free-electron energy: 4 eV (3000Å) – 1 photon -> 1 electron 18 Basic Concept: A P-N Photo Diode • depleted region – low conductivity – can support an E field • • • net positive charge (higher charge density near top) additional E-field applied subsequently generated electrons get trapped in potential well near top 19 Charge Trapping 20 Charge Transfer 21 Buried Channel CCDs • surface channel – charge transfer via overlapping gates – but trapping can occur at gates due to impurities • low CTE (~99%) • buried channels – CTE > 99.9995% – lower potential well • allow low light illumination • higher dynamic range and sensitivity 22 23 Front- vs. Back-Illumination 24 Advanced CCD Technology • orthogonal transfer – – – – • 30–100 Hz readout tip/tilt wavefont correction ~30% improvement in “seeing” large-format CCDs low-light CCDs – gain register clocked out with higher voltage (40–60V vs. ~10V) – 1–2% probability of generating 2nd electron at each gate transfer – total gain enhancement: ~1.01N = 145 for N=500 transfers 25 Analog-to-Digital Converters • X electrons = 1 digital unit (counts) – X is “gain”: usually 1–10 • CCD saturation depends on – well capacity • ~300,000 photolectrons for “deep depletion” CCDs – number of bits in ADC • n=16 bits: maximum is 216–1 = 65535 counts 26 CCD Quantum Efficiency 27 QE Improvements • UV coatings 28 QE Improvements • UV coatings • anti-reflection (AR) coatings n1 n2 d n3 – n2 = sqrt(n1 * n3) – n2*d = λ/4 29 Charge Diffusion • • due to substrate impurities in front-illuminated CCDs, red photons – are absorbed near back of CCD – see shallower potential well – can move into neighboring pixels • problematic / uneven in thinned CCDs – HST ACS • 0.5 mag loss at short wavelengths • alters shape of PSF 30 Read Noise • electrons / pix / read • sources – A/D conversion not perfectly repeatable – spurious electrons from electronics (e.g., from amplifier heating) • aleviated through • nowadays: <3–10 electrons 31 Dark Current • electrons / pixel / second • source – thermal noise at non-zero detector temperature • higher at room temperature (~10,000) • at cryogenic temperatures – LN2, –100 C – 0.1–20 e–/pix/s 32 Dark Current 33 Non-Linearity • differential (digitization noise) • integral – examples of non-linearity in SDSS CCDs: 34 Large-Area CCD Mosaics: The Sloan Digital Sky Survey (SDSS) SDSS 2.5 m telescope at Apache Point, NM Ritchey-Chretien design (Cassegrain-like) 35 Large-Area CCD Mosaics: The Sloan Digital Sky Survey (SDSS) 36 Large-Area CCD Mosaics: The Sloan Digital Sky Survey (SDSS) u g r i (ansgtroms) z 37 Proxima Cen 38