A Case for Subarray-Level Parallelism (SALP) in DRAM Yoongu Kim, Vivek Seshadri, Donghyuk Lee, Jamie Liu, Onur Mutlu Executive Summary • Problem: Requests to same DRAM bank are serialized • Our Goal: Parallelize requests to same DRAM bank at a low cost • Observation: A bank consists of subarrays that occassionally share global structures • Solution: Increase independence of subarrays to enable parallel operation • Result: Significantly higher performance and energy-efficiency at low cost (+0.15% area) 2 Outline • Motivation & Key Idea • Background • Mechanism • Related Works • Results 3 Introduction DRAM Bank Req Bank Bank Req Bank Req Bank Req conflict! Req Req Req 4x latency 4 Bank conflicts degrade performance Three Problems 1. Requests are serialized 2. Serialization is worse after write requests 3. Thrashing in row-buffer Row Row Row Row Bank Row-Buffer Req Req Req Thrashing: increases latency 5 Case Study: Timeline • Case #1. Different Banks Bank Wr Rd Bank Wr Rd time time in parallel • CaseServed #2. Same Bank Delayed Bank Wr 2Wr3WrWr Rd2 2Rd3 Rd 3 Rd time 1. 3. Write Serialization Thrashing Row-Buffer 2. Penalty 6 Our Goal • Goal: Mitigate the detrimental effects of bank conflicts in a cost-effective manner • Naïve solution: Add more banks – Very expensive • We propose a cost-effective solution 7 Key Observation #1 A DRAM bank is divided into subarrays Logical Bank Row Row Row Row Row-Buffer Physical Bank Subarray 64 Local Row-Buf 32k rows Subarray Local Row-Buf1 Global Row-Buf A single row-buffer Many local row-buffers, cannot drive all rows one at each subarray 8 Key Observation #2 Each subarray is mostly independent… Bank Subarray 64 Local Row-Buf ··· Global Decoder – except occasionally sharing global structures Subarray Local Row-Buf1 Global Row-Buf 9 Key Idea: Reduce Sharing of Globals Bank Local Row-Buf ··· Global Decoder 1. Parallel access to subarrays Local Row-Buf Global Row-Buf 2. Utilize multiple local row-buffers 10 Overview of Our Mechanism Subarray64 ··· Local Row-Buf Subarray1 Local Row-Buf 1. Parallelize Req Req Req Req 2. Utilize multiple local row-buffers To same bank... but diff. subarrays Global Row-Buf 11 Outline • Motivation & Key Idea • Background • Mechanism • Related Works • Results 12 Organization of DRAM System Channel Rank Rank Bank Bus CPU DRAM System Bank 13 Naïve Solutions to Bank Conflicts 1. More channels: expensive 2. More ranks: low performance 3. More banks: expensive DRAM System Channel Channel Rank Channel R R R R Channel Bank Channel Large load Bus Low frequency Significantly Many increases CPU pins Bus Bus DRAM die area Bus 14 Logical Bank addr Decoder bitlines data Precharged State Row Row Row Row Row-Buffer ACTIVATE PRECHARGE VDD 0 0 wordlines 0 0 RD/WR Activated State ? 15 Physical Bank short Subarray 64 Local Row-Buf ··· 32k rows very long bitlines: hard to drive 512 rows Local bitlines: Subarray Local Row-Buf1 Row-Buffer Global Row-Buf 16 Bank0 Bank1 Bank2 Bank3 Bank5 Bank6 Bank7 Bank8 Hynix 4Gb DDR3 (23nm) Subarray Lim et al., ISSCC’12 Subarray Decoder Tile Magnified 17 Bank: Full Picture Global Local bitlines bitlines Subarray 64 Local Row-Buf Subarray Local bitlines Decoder ··· Latch Global Decoder Bank Subarray Local Row-Buf1 Global Row-Buf 18 Outline • Motivation & Key Idea • Background • Mechanism • Related Works • Results 19 Problem Statement ··· Local Row-Buf To different subarrays Req Req Serialized! Local Row-Buf Global Row-Buf 20 Overview: MASA VDD Local Row-Buf ··· addr Global Decoder MASA (Multitude of Activated Subarrays) VDD Local Row-Buf READ Global Row-Buf 21 Challenges: Global Structures 1. Global Address Latch 2. Global Bitlines 22 VDD Local row-buffer ··· Latch addr Global Decoder Challenge #1. Global Address Latch VDD Local row-buffer Global row-buffer 23 VDD Local row-buffer ··· Latch Global Decoder Solution #1. Subarray Address Latch VDD Local row-buffer Global row-buffer 24 Challenges: Global Structures 1. Global Address Latch • Problem: Only one raised wordline • Solution: Subarray Address Latch 2. Global Bitlines 25 Challenge #2. Global Bitlines Global bitlines Local row-buffer Switch Local row-buffer Switch Global READ row-buffer 26 Solution #2. Designated-Bit Latch Wire Global bitlines Local row-buffer D Switch Local row-buffer D READ Switch Global row-buffer 27 Challenges: Global Structures 1. Global Address Latch • Problem: Only one raised wordline • Solution: Subarray Address Latch 2. Global Bitlines • Problem: Collision during access • Solution: Designated-Bit Latch 28 MASA: Advantages • Baseline (Subarray-Oblivious) 1. Serialization Wr 2 3 Wr 2 3 Rd 3 Rd 2. Write Penalty • MASA Wr Rd Wr Rd time 3. Thrashing Saved time 29 MASA: Overhead • DRAM Die Size: Only 0.15% increase – Subarray Address Latches – Designated-Bit Latches & Wire • DRAM Static Energy: Small increase – 0.56mW for each activated subarray – But saves dynamic energy • Controller: Small additional storage – Keep track of subarray status (< 256B) – Keep track of new timing constraints 30 D 3. Thrashing 2. Wr-Penalty Latches 1. Serialization Cheaper Mechanisms MASA SALP-2 D SALP-1 31 Outline • Motivation & Key Idea • Background • Mechanism • Related Works • Results 32 Related Works • Randomized bank index [Rau ISCA’91, Zhang+ MICRO’00, …] – Use XOR hashing to generate bank index – Cannot parallelize bank conflicts • Rank-subsetting [Ware+ ICCD’06, Zheng+ MICRO’08, Ahn+ CAL’09, …] – Partition rank and data-bus into multiple subsets – Increases unloaded DRAM latency • Cached DRAM [Hidaka+ IEEE Micro’90, Hsu+ ISCA’93, …] – Add SRAM cache inside of DRAM chip – Increases DRAM die size (+38.8% for 64kB) • Hierarchical Bank [Yamauchi+ ARVLSI’97] – Parallelize accesses to subarrays – Adds complex logic to subarrays – Does not utilize multiple local row-buffers 33 Outline • Motivation & Key Idea • Background • Mechanism • Related Works • Results 34 Methodology • DRAM Area/Power – Micron DDR3 SDRAM System-Power Calculator – DRAM Area/Power Model [Vogelsang, MICRO’10] – CACTI-D [Thoziyoor+, ISCA’08] • Simulator – CPU: Pin-based, in-house x86 simulator – Memory: Validated cycle-accurate DDR3 DRAM simulator • Workloads – 32 Single-core benchmarks • SPEC CPU2006, TPC, STREAM, random-access • Representative 100 million instructions – 16 Multi-core workloads • Random mix of single-thread benchmarks 35 Configuration • System Configuration – CPU: 5.3GHz, 128 ROB, 8 MSHR – LLC: 512kB per-core slice • Memory Configuration – DDR3-1066 – (default) 1 channel, 1 rank, 8 banks, 8 subarrays-per-bank – (sensitivity) 1-8 chans, 1-8 ranks, 8-64 banks, 1-128 subarrays • Mapping & Row-Policy – (default) Line-interleaved & Closed-row – (sensitivity) Row-interleaved & Open-row • DRAM Controller Configuration – 64-/64-entry read/write queues per-channel – FR-FCFS, batch scheduling for writes 36 80% 70% 60% 50% 40% 30% 20% 10% 0% MASA "Ideal" 17% 20% IPC Improvement Single-Core: Instruction Throughput MASA achieves most of the benefit of having more banks (“Ideal”) 37 Single-Core: Instruction Throughput IPC Increase SALP-1 SALP-2 30% 20% 10% 7% MASA "Ideal" 20% 17% 13% 0% DRAM Die Area < 0.15% 0.15% 36.3% SALP-1, SALP-2, MASA improve performance at low cost 38 IPC Improvement Single-Core: Sensitivity to Subarrays 30% 25% 20% 15% 10% 5% 0% MASA 1 2 4 8 16 32 64 128 Subarrays-per-bank You do not need many subarrays for high performance 39 Single-Core: Row-Interleaved, Open-Row MASA "Ideal" IPC Increase 20% 15% 10% 12% 15% 5% 0% MASA’s performance benefit is robust to mapping and page-policy 40 Single-Core: Row-Interleaved, Open-Row 1.0 0.8 0.6 0.4 0.2 0.0 -19% Normalized Dynamic Energy 1.2 Baseline MASA 100% 80% 60% 40% +13% MASA Row-Buffer Hit-Rate Baseline 20% 0% MASA increases energy-efficiency 41 Other Results/Discussion in Paper • Multi-core results • Sensitivity to number of channels & ranks • DRAM die area overhead of: – Naively adding more banks – Naively adding SRAM caches • Survey of alternative DRAM organizations – Qualitative comparison 42 Conclusion • Problem: Requests to same DRAM bank are serialized • Our Goal: Parallelize requests to same DRAM bank at a low cost • Observation: A bank consists of subarrays that occassionally share global structures • MASA: Reduces sharing to enable parallel access and to utilize multiple row-buffers • Result: Significantly higher performance and energy-efficiency at low cost (+0.15% area) 43 A Case for Subarray-Level Parallelism (SALP) in DRAM Yoongu Kim, Vivek Seshadri, Donghyuk Lee, Jamie Liu, Onur Mutlu Exposing Subarrays to Controller • Every DIMM has an SPD (Serial Presence Detect) (Image: JEDEC) – 256-byte EEPROM – Contains information about DIMM and DRAM devices – Read by BIOS during system-boot • SPD reserves 100+ bytes for manufacturer and user – Sufficient for subarray-related information 1. Whether SALP-1, SALP-2, MASA are supported 2. Physical address bit positions for subarray index 3. Values of timing constraints: tRA, tWA 45 Multi-Core: Memory Scheduling WS Increase Configuration: 8-16 cores, 2 chan, 2 ranks-per-chan 25% 20% 15% 10% 5% 0% Baseline FRFCFS SALP-1 SALP-2 TCM FRFCFS 8-core system MASA TCM 16-core system Our mechanisms further improve performance when employed with application-aware schedulers We believe it can be even greater with subarray-aware schedulers 46 Number of Subarrays-Per-Bank • As DRAM chips grow in capacity… – More rows-per-bank More subarrays-per-bank • Not all subarrays may be accessed in parallel – Faulty rows remapped to spare rows – If remapping occurs between two subarrays… • They can no longer be accessed in parallel • Subarray group – Restrict remapping: only within a group of subarrays – Each subarray group can accessed in parallel – We refer to a subarray group as a “subarray” • We assume 8 subarrays-per-bank 47 Area & Power Overhead • Latches: Per-Subarray Row-Address, Designated-Bit – Storage: 41 bits per subarray – Area: 0.15% in die area (assuming 8 subarrays-per-bank) – Power: 72.2uW (negligible) • Multiple Activated Subarrays – Power: 0.56mW static power for each additional activated subarray • Small compared to 48mW baseline static power • SA-SEL Wire/Command – Area: One extra wire (negligible) – Power: SA-SEL consumes 49.6% the power of ACT • Memory Controller: Tracking the status of subarrays – Storage: Less than 256 bytes • Activated? Which wordline is raised? Designated? 48