C. J. Spanos Control Charts for Attributes The p (fraction non-conforming), c (number of defects) and the u (non-conformities per unit) charts. The rest of the magnificent seven. L8 1 C. J. Spanos Yield Control 100 100 80 80 60 60 40 40 20 20 0 0 10 20 30 0 0 10 20 30 Months of Production L8 2 C. J. Spanos The fraction non-conforming The most inexpensive statistic is the yield of the production line. Yield is related to the ratio of defective vs. non-defective, conforming vs. non-conforming or functional vs. nonfunctional. We often measure: • Fraction non-conforming (p) • Number of defects on product (c) • Average number of non-conformities per unit area (u) L8 3 C. J. Spanos The p-Chart The p chart is based on the binomial distribution: n-x n x x = 0,1,...,n p (1-p) x mean np variance np(1-p) the sample fraction p= D n mean p variance p(1-p) n P{D = X} = L8 4 C. J. Spanos The p-chart (cont.) p must be estimated. Limits are set at +/- 3 sigma. m mean p variance p(1-p) nm Σ pi p= i=1 m (in (in this this and and the the following following discussion, discussion, "n" the number number of of "n" isis the samples in each group and is the number "m" samples in each group and "m" is the number of of groups groups that thatwe weuse usein in order orderto todetermine determinethe the control controllimits) limits) L8 5 C. J. Spanos Designing the p-Chart In general, the control limits of a chart are: UCL= µ + k σ LCL= µ - k σ where k is typically set to 3. These formulas give us the limits for the p-Chart (using the binomial distribution of the variable): p can be estimated: p(1-p) n p(1-p) LCL = p - 3 n UCL = p + 3 pi = Di i = 1,...,m (m = 20 ~25) n m Σ pi p= L8 i=1 m 6 C. J. Spanos Example: Defectives (1.0 minus yield) Chart 0.5 UCL 0.411 0.4 0.3 0.232 0.2 0.1 LCL 0.053 0.0 0 10 20 30 Count "Out of control points" must be explained and eliminated before we recalculate the control limits. This means that setting the control limits is an iterative process! Special patterns must also be explained. L8 7 C. J. Spanos Example (cont.) After the original problems have been corrected, the limits must be evaluated again. L8 8 C. J. Spanos Operating Characteristic of p-Chart In order to calculate type I and II errors of the p chart we need a convenient statistic. Normal approximation to the binomial (DeMoivre-Laplace). if n large and np(1-p) >> 1, then P{D = x} = n p x (1-p) (n-x) ~ x (x-np) 2 1 e 2np(1-p) 2πnp(1-p) In other words, the fraction nonconforming can be treated as having a nice normal distribution! (with µ and σ as given). This can be used to set frequency, sample size and control limits. Also to calculate the OC. L8 9 C. J. Spanos Binomial distribution and the Normal bin 10, 0.1 bin 100, 0.5 bin 5000 0.007 4.0 3.0 2.0 65 50 60 45 55 40 50 45 1.0 40 35 0.0 L8 35 30 25 20 15 Quantiles Quantiles Quantiles Moments Moments Moments 10 C. J. Spanos Designing the p-Chart Assuming that the discrete distribution of x can be approximated by a continuous normal distribution as shown, then we must: • choose n so that we get at least one defective with 0.95 probability. • choose n so that a given shift is detected with 0.50 probability. or • choose n so that we get a positive LCL. Then, the operating characteristic can be drawn from: β = P { D < n UCL /p } - P { D < n LCL /p } L8 11 C. J. Spanos The Operating Characteristic Curve (cont.) The OCC can be calculated two distributions are equivalent and np=λ). p = 0.20, LCL=0.0303, UCL=0.3697 L8 12 C. J. Spanos In reality, p changes over time L8 (data from the Berkeley Competitive Semiconductor Manufacturing Study) 13 C. J. Spanos The c-Chart Sometimes we want to actually count the number of defects. This gives us more information about the process. The basic assumption is that defects "arrive" according to a Poisson model: -c x x = 0,1,2,.. p(x) = e c x! µ = c, σ2 = c This assumes that defects are independent and that they arrive uniformly over time and space. Under these assumptions: UCL = c + 3 c center at c LCL = c - 3 c and c can be estimated from measurements. L8 14 C. J. Spanos Poisson and the Normal poisson 2 poisson 20 poisson 100 130 10 30 120 8 110 6 100 20 4 90 80 2 10 70 0 Quantiles Quantiles Quantiles Moments Moments Moments L8 15 C. J. Spanos Example: "Filter" wafers used in yield model Fraction Nonconforming (P-chart) 0.5 UCL 0.454 Fraction Nonconforming 0.4 ¯ 0.306 0.3 0.2 LCL 0.157 0.1 0 2 4 6 8 10 12 14 Defect Count (C-chart) Number of Defects 200 UCL 99.90 100 Ý 74.08 LCL 48.26 0 0 2 4 6 8 10 12 14 Wafer No L8 16 C. J. Spanos Counting particles Scanning a “blanket” monitor wafer. Detects position and approximate size of particle. y x L8 17 C. J. Spanos Scanning a product wafer L8 18 C. J. Spanos Typical Spatial Distributions L8 19 C. J. Spanos The Problem with Wafer Maps Wafer maps contain information that is very difficult to enumerate A simple particle happening. L8 count cannot convey what is 20 C. J. Spanos Special Wafer Scan Statistics for SPC applications •Particle Count •Particle Count by Size (histogram) •Particle Density •Particle Density variation by sub area (clustering) •Cluster Count •Cluster Classification •Background Count Whatever Whatever we we use use (and (and we we might might have have to to use use more more than one), must follow a known, usable distribution. than one), must follow a known, usable distribution. L8 21 C. J. Spanos In Situ Particle Monitoring Technology Laser light scattering system for detecting particles in exhaust flow. Sensor placed down stream from valves to prevent corrosion. Laser chamber to pump Detector Assumed to measure the particle concentration in vacuum L8 22 C. J. Spanos Progression of scatter plots over time The endpoint detector failed during the ninth lot, and was detected during the tenth lot. L8 23 C. J. Spanos Time series of ISPM counts vs. Wafer Scans L8 24 C. J. Spanos The u-Chart We could condense the information and avoid outliers by using the “average” defect density u = Σc/n. It can be shown that u obeys a Poisson "type" distribution with: µu = u, σ2u = u n so UCL =u + 3 u n u LCL =u - 3 n where u is the estimated value of the unknownn of u. The sample size n may vary. This can easily be accommodated. L8 25 C. J. Spanos The Averaging Effect of the u-chart poisson 2 average 5 5.0 10 4.0 8 6 4 2 0 L8 3.0 2.0 1.0 0.0 Quantiles Quantiles Moments Moments 26 C. J. Spanos Filter wafer data for yield models (CMOS-1): 0.5 Fraction Nonconforming (P-chart) UCL 0.454 Fraction Nonconforming 0.4 ¯ 0.306 0.3 0.2 LCL 0.157 0.1 0 2 4 6 8 10 12 14 200 Number of Defects Defect Count (C-chart) UCL 99.90 100 Ý 74.08 LCL 48.26 0 0 2 4 6 8 10 12 14 6 Defect Density (U-chart) Defects per Unit 5 4 UCL 3.76 3 × 2.79 2 LCL 1.82 1 0 2 4 L8 6 8 10 12 14 27 Wafer No C. J. Spanos The Use of the Control Chart The control chart is in general a part of the feedback loop for process improvement and control. Input Process Output Measurement System L8 Verify and follow up Detect assignable cause Implement corrective action Identify root cause of problem 28 C. J. Spanos Choosing a control chart... ...depends very much on the analysis that we are pursuing. In general, the control chart is only a small part of a procedure that involves a number of statistical and engineering tools, such as: • experimental design • trial and error • pareto diagrams • influence diagrams • charting of critical parameters L8 29 C. J. Spanos The Pareto Diagram in Defect Analysis Typically, a small number of defect types is responsible for the largest part of yield loss. The most cost effective way to improve the yield is to identify these defect types. figure 3.1 pp 21 Kume L8 30 C. J. Spanos Pareto Diagrams (cont) Diagrams by Phenomena • defect types (pinholes, scratches, shorts,...) • defect location (boat, lot and wafer maps...) • test pattern (continuity etc.) Diagrams by Causes • operator (shift, group,...) • machine (equipment, tools,...) • raw material (wafer vendor, chemicals,...) • processing method (conditions, recipes,...) L8 31 C. J. Spanos Example: Pareto Analysis of DCMOS Process DCMOS Defect Classification 100 80 Percentage 60 occurence cummulative 40 20 others se particles rn bridging sed contacts ontamination scratches s problems vious layer 0 Though the defect classification by type is fairly easy, the classification by cause is not... L8 32 C. J. Spanos Cause and Effect Diagrams (Also known as Ishikawa,fish bone or influencediagrams.) figure 4.1 pp 27 Kume Creating such a diagram requires good understanding of the process. L8 33 C. J. Spanos An Actual Example L8 34 C. J. Spanos Example: DCMOS Cause and Effect Diagram Past Steps Parametric Control Particulate Control rec. handling inspection SPC automation calibration cassettes SPC equipment monitoring cleaning Defect skill vendor experience shift Operator chemicals loading transport vendor boxes Handling Wafers utilities filters Contamination Control L8 35 C. J. Spanos Example: Pareto Analysis of DCMOS (cont) DCMOS Defect Causes 100 80 percentage 60 occurence cummulative 40 20 others smiff boxes inspection loading utilities equipmnet 0 Once classification by cause has been completed, we can choose the first target for improvement. L8 36 C. J. Spanos Defect Control In general, statistical tools like control charts must be combined with the rest of the "magnificent seven": • Histograms • Check Sheet • Pareto Chart • Cause and effect diagrams • Defect Concentration Diagram • Scatter Diagram • Control Chart L8 37 C. J. Spanos Logic Defect Density is also on the decline Y = [ (1-e-AD)/AD ]2 L8 38 C. J. Spanos What Drives Yield Learning Speed? L8 39