BORANG FRGS – A1 (R)
Kod Rujukan:
(Diisi oleh RMC)
APPLICATION FORM
FUNDAMENTAL RESEARCH GRANT SCHEME (FRGS)
Skim Geran Penyelidikan Fundamental
(Pindaan 1/2014)
JABATAN PENGAJIAN TINGGI
KEMENTERIAN PENDIDIKAN MALAYSIA
One (1) copy of this form must be submitted to the Institution of Higher Education Excellence Planning Division,
Department of Higher Education, Level 7, No. 2, Tower 2, Street P5/6, Precinct 5, 62200 Putrajaya.
[Incomplete Form will be rejected]
A
TITLE OF PROPOSED RESEARCH:
Tajuk penyelidikan yang dicadangkan :
Mechanism of Chromium doping in Copper-Zinc-Tin-Sulphide (Cu2ZnSnS4 @CZTS) Thin Films
for Enhanced Optoelectronic Properties
B
DETAILS OF RESEARCHER / MAKLUMAT PENYELIDIK
B(i)
Name of Project Leader:
Nama Ketua Projek:
B(ii)
Position (Please tick ( √ )):
Jawatan (Sila tanda ( √ )):
Professor
Profesor
Assoc. Prof. / Sen. Lect.
Prof. Madya / P. Kanan
IC / Passport Number:
No. Kad Pengenalan/ Pasport:
Lecturer
Pensyarah
B(iii)
Faculty/School/Centre/Unit (Please provide full address):
Fakulti/Jabatan /Pusat/Unit (Sila nyatakan alamat penuh):
B(iv)
Office Telephone No.:
No. Telefon Pejabat:
B(v)
E-mail Address:
Alamat e-mel:
B(vi)
Date of first appointment with this University:
Tarikh mula berkhidmat dengan Universiti ini:
Others: Specify
Lain-lain: Nyatakan __________
Handphone No.:
No. Telefon Bimbit:
B(vii)
Type of Service (Please tick ( √ )):
Jenis Perkhidmatan (Sila tanda ( √ )):
Permanent
Tetap
C
C(i)
Contract (State contract expiry date):
Kontrak (Nyatakan tarikh tamat kontrak):
____________________
RESEARCH INFORMATION / MAKLUMAT PENYELIDIKAN
Research Cluster (Please tick ( √ )):
Kluster Penyelidikan (Sila tanda ( √ )):
A.
Pure Science (Sains Tulen)
Chemistry
(Kimia)
Physic
(Fizik)
Biology
(Biologi)
Biochemistry
(Biokimia)
Materials Science
(Sains Bahan)
Mathematics and Statistics
(Matematik dan Statistik)
Chemistry
(Kimia)
Physic
(Fizik)
Biology
(Biologi)
Mathematics and Statistics
(Matematik dan Statistik)
Biotechnology
(Bioteknologi)
Materials Science
(Sains Bahan)
B. Applied Science (Sains Gunaan)
C.
Technology and Engineering (Teknologi dan Kejuruteraan)
Mechanical & Manufacturing
(Mekanikal dan Pembuatan)
Electrical and Electronic
(Elektrikal dan Elektronik)
Civil and Structural
(Awam dan Struktur)
Material and Polymer
(Bahan dan Polimer)
Chemical Engineering
and Processing
(Kejuruteraan Kimia dan
Proses)
Energy and Green Technology
(Tenaga dan Teknologi Hijau)
Infrastructure and
Transportation
(Infrastruktur dan
Pengangkutan)
Construction and
Construction Materials
(Pembinaan dan Bahan
Binaan)
Aerospace
(Aeroangkasa)
D.
E.
F.
Clinical and Health Sciences (Sains Kesihatan dan Klinikal)
Basic Medical Sciences
(Sains Perubatan Asas)
Pharmacy
(Farmasi)
Pharmacology
(Farmakologi)
Medical Microbiology
(Mikrobiologi Perubatan)
Parasitology
(Parasitologi)
Pathology
(Pathologi)
Community Medical Prevention
(Perubatan Pencegahan
Masyarakat)
Clinical Surgical
(Klinikal Surgikal)
Clinical Medical
(Klinikal Medikal)
Associate Health Science
(Sains Kesihatan Bersekutu)
Dental
(Pergigian)
Nursing Science
(Sains Kejururawatan)
Anthropology
(Antropologi)
Psychology
(Psikologi)
Sociology
(Sosiologi)
Political Science
(Sains Politik)
Business and Management
(Pengurusan dan Perniagaan)
Geography
(Geografi)
Economic
(Ekonomi)
Human Ecology
(Ekologi Manusia)
Communication
(Komunikasi)
Social Sciences (Sains Sosial)
Arts and Applied Arts (Sastera dan Sastera Ikhtisas)
Language and Linguistic
(Bahasa dan Linguistik)
Literature
(Kesusasteraan)
Religion
(Agama)
Philosophy
(Falsafah)
Civilization
(Tamadun)
History
(Sejarah)
Art
(Seni)
Culture
(Budaya)
Education
(Pendidikan)
Policies and Law
(Dasar dan Undang-undang)
Built Environment
(Alam BinaAspek Kemanusiaan)
Environment
(Alam SekitarAspek Kemanusiaan)
G. Natural Sciences and National Heritage (Sains Tabii dan Warisan Negara)
Environment
(Alam Sekitar)
Forestry
(Perhutanan)
Agriculture
(Pertanian)
Marine
(Marin)
Archaeology
(Arkeologi)
Geoscience
(Geosains)
Ethnography
(Etnografi)
Built Environment
(Heritage Aspect)
Alam Bina (Aspek Warisan)
Culture
(Budaya)
Biodiversity
(Kepelbagaian Biologi)
H. Information and Communication Technology (Teknologi Maklumat dan Komunikasi)
Software and Information System
(Perisian dan Sistem Maklumat)
Soft Computing
(Pengkomputeran Lembut)
Computer Networking
(Rangkaian Komputer)
Information Security
(Keselamatan Maklumat)
Multimedia
(Multimedia)
Computer Engineering
(Kejuruteraan Komputer)
Computer Science
(Sains Komputer)
C(ii)
Location of Research:
Tempat penyelidikan dijalankan:
Solar Photovoltaic & Advance Solar Cell group, Kompleks Penyelidikan Lingkungan Ke-2, Solar Energy
Research Institute (SERI), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor.
C(iii)
Duration of this research (Maximum 36 months):
Tempoh masa penyelidikan ini (Maksimum 36 bulan):
Duration: 24 months
Tempoh :
From
Dari
: 01/07/2014
:
To
: 30/06/2016
Hingga :
C(iv)
Other Researchers:
Ahli-ahli penyelidik yang lain:
(Please include maximum 5 pages of curriculum vitae for each researcher)
Bil
Name
Nama
IC / Passport
Number:
No. Kad Pengenalan/
Pasport:
Faculty/ School/
Centre/ Unit
Fakulti/
P.Pengajian/
Pusat/Unit
Academic
Qualification/
Designation
Tahap Kelayakan
Akademik/Jawatan
Signature
Tandatangan
1
2
3
4
5
C(v)
Research projects that have been completed or ongoing by project leader for the last three years. Please
provide title of research, grant’s name, position, duration, year commence and year ending.
Sila sediakan maklumat termasuk termasuk tajuk, nama geran, peranan, tempoh, tahun mula dan tahun tamat
bagi penyelidikan yang sedang/telah dijalankan oleh ketua penyelidik dalam tempoh tiga tahun terakhir.
Title of Research
Tajuk penyelidikan
Grant’s Name
Nama Geran
Position / Role
Jawatan / Peranan
Duration
Tempoh
Start Date
Tarikh mula
End Date
Tarikh tamat
C(vi)
Please provide information on academic publications that has been published by the project leader for
the last five (5) years. (Example: Journals, Books, Chapters in books, etc)
Sila kemukakan maklumat berkaitan penerbitan akademik yang telah diterbitkan oleh ketua penyelidik dalam
tempoh lima (5) tahun terakhir. (Contoh: Jurnal, buku, bab dalam buku, dll)
Title of publication
Tajuk penerbitan
Name of journals/books
Nama jurnal/buku
Year published
Tahun diterbitkan
Contoh:Malaysian Law Journal
C(vii)
Executive Summary of Research Proposal (maximum 300 words)
(Please
include the problem statement, objectives, research methodology, expected
output/outcomes/implication, and significance of output from the research project)
Ringkasan Cadangan Eksekutif Penyelidikan (maksimum 300 patah perkataan)
(Meliputi pernyataan masalah, objektif, kaedah penyelidikan, jangkaan hasil penyelidikan/implikasi dan
kepentingan output projek penyelidikan)
The quaternary Cu2ZnSnS4 (CZTS) semiconductor is a potential photovoltaic (PV) material for thin film solar
cells. As the bandgap of CZTS is in the range of 1.4-1.6 eV with high absorption coefficient (α ≃ 104 cm−1). In
addition, CZTS is earth-abundant, low-cost, and constituents are nontoxic, thus make it attractive for low cost
solar cell. Many groups are doing active research and the exhibited conversion efficiency of CZTS thin film solar
cell is still limited to around 10%. In fact the properties of CZTS material are not properly understood and utilized.
The big issue of CZTS is p-type self doping which occurs during the growth through the formation of intrinsic
defects. The controlling of the p-type concentrations is very limited with the current deposition techniques of
CZTS. It is therefore important to know the p-type doping concentrations in CZTS for not only to improve the
conversion efficiency but also to know the fundamental of physics. Until now no reports were found applying
specific source during deposition for making p-type CZTS layer. However, theoretical investigations were carried
out for iridium (Ir), chromium (Cr) and vanadium (V) dopants. It is found that the formation energy of CrCu
substitutions is less than other substitutions and the intermediate band (IB) of CrCu is full. Therefore, we aim to
incorporate Cr into CZTS to see their electronic (e.g. conductivity, mobility, etc.) and photovoltaic properties. We,
hence, plan to use RF magnetron sputtering to co-sputter CZTS and Cr at various conditions. Afterwards, the
expected Cr-doped p-type CZTS layer will go through different characterization tools (e.g. EDX, XRD, SEM,
AFM, Hall measurement) to assess their properties. Thus this study will bring new insights of CZTS doping and
then it would be possible to make low cost solar cells exhibiting high efficiency.
C(viii)
Detailed proposal of research project:
Cadangan maklumat penyelidikan secara terperinci:
(a) Research background including Problem Statement, Hypothesis/Research Questions, Literature
Reviews, Related References and Relevance to Goverment Policy, if any.
Keterangan latar belakang penyelidikan termasuk Pernyataan Masalah, Hipotesis/Persoalan Penyelidikan,
Kajian Literatur, Rujukan Berkaitan dan Perkaitan dengan Dasar Kerajaan, jika berkenaan.
Problem Statement
The commercially available solar cells have drawbacks of large scale production and high cost. For instance,
crystalline Si with its low absorption coefficient is dominating the world PV market, though the cost of solar cells
is much high to reach our daily life. Then thin film PV materials such as CdTe, CuInxGa1-xS(Se)2 (CIGS), thin film
Si and Cu2ZnSnS4 (CZTS) become the subject of intense research [1-6]. However, Cd is toxic and In has
scarcity issue, thus limiting the development of CdTe and CIGS based solar cells, respectively. On the other
hand the constituents of CZTS are available in nature and none of them are harmful for the environment. In
addition the bandgap (1.4 -1.6 eV) of CZTS is direct which can facilitate to produce high conversion efficiency.
Also due to the high absorption coefficient (α ≃ 104 cm−1) of CZTS, all the incident photons can be absorbed in a
thin layer. Therefore thin film CZTS solar cell is believed to revolutionalize the world PV market in the near
future. The conversion efficiency so far reported is around 10% though the theoretical value is more than 30%
[2].
The two major drawbacks of potential quaternary semiconductor Cu2ZnSnS4 (CZTS) are: formation of secondary
phases because of the narrow compositional window to form stoichiometric CZTS and the formation of intrinsic
defects. In this study we will intentionally focus on the study of intrinsic defects but not limited to that.
Research Questions:
The big issue of CZTS is p-type self doping which occurs during the growth through the formation of intrinsic
defects. The formation of vacancies or point defects (VCu, VZn, VSn, and VS), antisite defects (CuZn, Zncu, CuSn,
SnCu, ZnSn, and SnZn) and interstitial defects (Cui, Zni, and Sni) are quite common during the deposition of CZTS
[2,4]. The low Cu and high Zn ratio in CZTS causes antisite defects CuZn (relatively deeper acceptor level), which
are easily formed and thus makes it p-type. In fact, the formation energy of acceptor defects is lower than the
donor defects [4,7,8].
The control over the p-type concentrations using the usual deposition techniques of CZTS is limited. One
possible solution would be to dope CZTS intentionally, using a dopant source during the deposition. So far no
reports were found using any source to dope CZTS. However, theoretical calculations were performed for
different dopants such as Ir, Cr and V, to replace Cu, Zn or Sn host atoms of CZTS [7,8]. Among them Cr seems
to be the most suitable candidate for p-type doping of CZTS, as the formation energy of Cr is more favorable
than others [8]. For this reason, we aim to find out the mechanism of Cr source doping for the p-type doping of
CZTS targeting the control over the doping concentrations using physical vapor deposition.
Thus it would be a real challenge to see if the experiment goes in a way that supports the theory, first. The
second challenge is deposition process optimization by varying different parameters and the last but not least,
the behavior of Cr impurity in CZTS and the material properties realization.
Hypothesis
In semiconductor, the defect states insert intermediate states into the bandgap. Density functional theory is used
to calculate the electronic structure of the CZTS using different Dopants [8]. The IB is found full, empty, and
partially full for the CrCu, CrSn, and CrZn substitutions, respectively. That is to say, the Fermi levels are above,
below and overlap the IB for the CrCu, CrSn, and CrZn substitutions, respectively. Thus in the case of CrCu
substitution, the additional VB−IB and IB−CB transitions permit the absorption of lower energy photons than the
host semiconductor. The photon absorption is more efficient than in conventional single-gap cells. The obtained
absorption coefficients show an increase in light absorption below the host gap due to these additional
absorption channels [8].
The substitution or formation energy is needed to incorporate one positively (negatively) charged M atom into
place A (MB substitution) in the host H semiconductor. The substitution energy of a host A atom by M (M A
substitution) in CZTS is estimated as [8]
E ( A)  E (Cu2 ZnSnS4 : M )  E (Cu2 ZnSnS4 )  [ E ( A)  E ( M )]
where A = Cu, Sn or Zn, M = Cd, V, Cr and Ir, E(Cu2ZnSnS4:M) and E(Cu2ZnSnS4) are the total energies of the
unit cell with and without the M impurity, and E(A) and E(M) are the energies of the elemental atomic reservoirs
(isolated A and M atoms). In fact, E(A) and E(M) are the chemical potentials, change independently depending
on the chemical environment [4]. Substitution energies are calculated considering all the dopants for Cu, Zn or
Sn atom in CZTS. It is found that, in all substituted structures the substitution energy is negative, between -100
meV and -180 meV per atom, indicating that these substitution growth processes are favorable [7,8]. Also in all
cases the substitution of Cu host atom by the dopants found more energetically favorable. Among them Cddoped CZTS shows n-type conduction and rest of them are showing p-type conduction in which CrCu seems to
be the most favorable. This is because Cr required less energy to incorporate in CZTS and replace the host Cu
atom and the intermediate band (IB) of CrCu is full.
Theoretically it is shown that Cr is the most suitable dopant for CZTS. It is important to mention that, so far there
is no report regarding the Cr-doped CZTS (experimental) whatever the deposition system is. Thus, it would be
interesting to imply the theoretical knowledge and explore the possibility of Cr-doped CZTS using RF magnetron
sputtering system. Therefore, we aim to incorporate Cr into CZTS to see their electronic (e.g. conductivity,
mobility, etc.) and photovoltaic properties. We, hence, plan to use RF magnetron sputtering to co-sputter CZTS
and Cr at various conditions. Afterwards, the expected Cr-doped p-type CZTS layer will go through different
characterization tools (e.g. EDX, XRD, SEM, AFM, Hall measurement) to assess their properties. We believe
that, this study will bring new insights of CZTS doping and then it would be possible to make low cost solar cells
exhibiting high efficiency.
Literature Reviews
A very few theoretical reports were found regarding the doping of CZTS [4,7,8]. Yet, no experimental reports
were found to our best knowledge. Nevertheless, in this section we will state few other important information
related to the doping of CZTS, which are not mentioned earlier.
In CZTS the Cu-S covalent bond is weak. Thus it is easy to form Cu-vacancy in CZTS. Compared to the Cu-S
bond, Zn–S bond is more ionic and little stronger. In contrast, the Sn–S bond in CZTS is much stronger than the
Cu–S and Zn–S bonds. As a result, the formation energy of Cu vacancy is much smaller than those of the Zn
and Sn vacancies. It is therefore suggesting that, the ionization energy of Cu is less than other host atoms. One
example for supporting this argument is: during the chemical bath deposition of the CdS layer on CZTS film, Cu
and Zn atoms drained into the ammonia aqueous solution and formed [Cu(NH 3)2]+ and [Zn(NH3)4]2+ complex ions
[4]. However no complex ion is formed containing Sn. The calculated substitution energy for CdCu and CdZn are
found less than the CdSn, indicating that Cd atom can more easily substitute Cu and Zn atom in CZTS. Note that,
the impurity level of CdCu is formed near the CB minimum and Cd-doped CZTS for Zn atom (CdZn) shows neutral
charge. The n-type conductivity of Cd for CZTS and its toxicity are the reason for not choosing it as a dopant for
this study.
CZTS is an ionic material where the atoms have the formal charges Cu2+Zn2+Sn4+S42−. The impurity M can be
donor type (Mp+/ M(p+1)+) and acceptor type (Mp+/ M(p-1)+). The impurity M substitutes cation host atoms with a
charge state p (p = 1,2 and 4 for the MCu, MZn and MSn substitutions, respectively) [7]. The energies related to
these substitutions are the donor (eD) and acceptor (eA) ionization energies, respectively for donor type and
acceptor type. An impurity acts as a donor if eD lies in the gap but eA does not. It can be an acceptor if eA lies in
the gap but eD does not. Or the impurity can have an amphoteric behavior if both eD and eA are found within the
gap. The oxidation state of Mp+ is stable when the Fermi level is between the donor (eA) and (eD) ionization
energies.
Similarly, M(p-1)+ is stable for Fermi level above eA and M(p+1)+ is stable for Fermi level below eD. It is found that,
the donor and acceptor energies for the CrZn, IrSn, IrCu, and VZn substitutions are within the gap, i.e. these are
amphoteric [7]. The substitution energies are also calculated and for CrCu it is found -125 meV, the most
favorable one.
The oxidation states of Cr occur in wide range. For Cr Cu, CrSn and CrZn, the oxidation states are +1, +4 and +2
respectively. The dangerous oxidation state +6 is not included, thus Cr substitution in CZTS for the improvement
of PV properties is not an environmental problem [8].
Relevance to Goverment Policy, if any
References
1. M. A. Green, K. Emery, Y. Hishikawa, E. D. Dunlop, Solar cell efficiency tables (version 39), Progress in
Photovoltaics: Research and Applications 20, 12-20, 2012.
2. Minlin Jiang and Xingzhong Yan, Cu2ZnSnS4 Thin Film Solar Cells: Present Status and Future Prospects,
chapter 5, 107-143, INTECH 2013, http://dx.doi.org/10.5772/50702.
3. Nowshad Amin, Potential low cost, high efficiency solar photovoltaic technology: cadmium telluride (CdTe) thin
film solar cells, Lambert Academic Publishing GmbH & Co. KG, 2011.
4. Tsuyoshi Maeda, Satoshi Nakamura, and Takahiro Wada, First-Principles Study on Cd Doping in Cu2ZnSnS4
and Cu2ZnSnSe4, Jpn. J. Appl. Phys. 51, 10NC11, 2012.
5. N. Khoshsirat, N. A. Md Yunus, M. N. Hamidon, S. Shafie, N. Amin, ZnO doping profile effect on CIGS solar
cells efficiency and parasitic resistive losses based on cells equivalent circuit, ICCAS 2013- IEEE International
Conference on Circuits and Systems: "Advanced Circuits and Systems for Sustainability", Article
number 6671641, 86-91, 2013.
6. P. Chelvanathan, M. I. Hossain, J. Husna, M. Alghoul, K. Sopian, N. Amin, Effects of transition metal
dichalcogenide molybdenum disulfide layer formation in copper-zinc-tin-sulfur solar cells from numerical
analysis, Japanese Journal of Applied Physics,Volume 51, Issue 10 PART 2, 10NC32, 2012.
7. C. Tablero, Ionization energies of amphoteric-doped Cu2ZnSnS4: Photovoltaic Application, Journal of Alloys
and Compounds 586, 22–27, 2014
8. C. Tablero, Electronic and Photon Absorber Properties of Cr-Doped Cu2ZnSnS4, J. Phys. Chem. C 2012,
116, 23224−23230.
(b) Objective (s) of the Research
Objektif Penyelidikan
Example /Contoh:
This study embarks on the following objectives:
1)
2)
3)
4)
(c)
To investigate Cr doping mechanism in CZTS thin films grown by Magnetron sputtering.
To evaluate the Cr-doped CZTS thin films in terms of physical, electronic and optical properties.
To examine the interface between Cr-doped CZTS and n-type buffer layers like ZnS
To configure the optimized CZTS and ZnS thin films in hetero-junctions for optoelectronic
property investigation.
Methodology
Kaedah penyelidikan
Please state in the form / Sila nyatakan di borang ini
1. Description of Methodology
This project can be conducted into 4 major steps:
A. Growth of Cr-doped CZTS thin films
In order to obtain the suitable deposition condition we will vary two different parameters: substrate temperatures
and RF power for both Cr and CZTS sources. The layers will be grown by co sputter Cr and CZTS targets.
Then, one set of samples will be annealed for different temperatures. And, another set of samples will go through
the sulfurization process in an annealing chamber.
B. Evaluation of Cr-doped CZTS thin film properties
Microstructural and surface morphology will be studied using Scanning Electron Microscopy (SEM). AFM will be
used to see the surface roughness.
Energy Dispersive Spectroscopy (EDX) and Secondary Ion Mass Spectroscopy (SIMS) will be carried out to do
the compositional study.
The crystallinity and defect study of the materials will be performed using X-ray Diffraction (XRD).
Electrical studies which include mobility, resistivity, dopant density, doping type, drift velocity using Hall-effects
will be performed.
Optical study of bandgap, emission properties using photoluminescence will be carried out.
C. Study the interface between Cr-doped CZTS
The interface of Cr-doped CZTS and n-type buffer layers, will be examined using high resolution transmission
electron microscopy (HR-TEM) and EDX. We will mainly focus on the cross-sectional study of the interface.
D. Fabrication of full soalr cell
On top of the optimized CZTS layer we will deposit ZnS as a buffer layer. Then the subsequent ITO and contact
layer will be grown. Finally, we will test and measure the performances of this thin film solar cells in order to see
their photovoltaic property.
2. Flow Chart of Research Activities ( Please enclose in the Appendix) See Appendix A
3. Gantt Chart of Research Activities (Please enclose in the Appendix) See Appendix B
4. Milestones and Dates
(d)
Expected Results/Benefit
Jangkaan Hasil Penyelidikan
1. Novel theories/New findings/Knowledge
New finding of the thin film CZTS solar cells for making it p-type. It will be first
experimental findings of Cr-doped CZTS. Optimization of the deposition parameters such
as doping profile, deposition temperature by sputtering technique. Characterization of the
CZTS layers using XRD, SEM, AFM and measure the performance of solar cell. Compare
the results with conventional CZTS solar cells.
2. Research Publications
4 Conference publications and 2 Journal publications.
3. Specific or Potential Applications
The fabrication process recipes of thin film Cr-doped CZTS solar cell will be transfered to
any interested industry.
4. Number of PhD and Masters (by research) Students
1 Masters student
5. Impact on Society, Economy and Nation
D
ACCESS TO EQUIPMENT AND MATERIAL / KEMUDAHAN SEDIA ADA UNTUK KEGUNAAN BAGI
PENYELIDIKAN INI
Equipment
Peralatan
Location
Tempat
Example / Contoh:
10K clean room facilities, Co-Sputtering vacuum chamber (4
Gun),
Molecular Beam Epitaxy (MBE) chamber, Thermal evaporation
chamber , Spin-coating tool, Thermal annealing chamber/oven,
X-Ray
Diffraction (XRD), EDX Spectrometry, Hall Effect measurement
tools,
Four point probe, Scanning Electron Microscope (SEM), Atomic
Force
Microscope (AFM), Surface profilometer, Screen-printing
systems,
Solar Cell I-V tester, Laser Scriber, Spectral response
measurement
equipment, NMR, UV-vis.
E
UiTM
UKM
BUDGET /BELANJAWAN
Please indicate your estimated budget for this research and details of expenditure according to the
guidelines attached.
Sila nyatakan anggaran bajet bagi cadangan penyelidikan ini dan berikan butir – butir perbelanjaan lengkap
dengan berpandukan kepada garis panduan yang dilampirkan.
Budget details
Butiran belanjawan
Amount requested by applicant
Jumlah yang dipohon
oleh pemohon
Year 1
Tahun 1
(RM)
E(i)
Year 2
Tahun 2
(RM)
Year 3
Tahun 3
(RM)
Total
Jumlah
(RM)
Please Indicate the overall Budget
Sila nyatakan bajet secara
keseluruhan
24000
Vote 11000 Salary and wages
Upah dan Elaun
Amount approved by VC/Dep.VC
(R&D)/Director of RMC
Jumlah yang diluluskan oleh Naib
Canselor/ TNC (P&I)/Pengarah RMC
Graduate Research
Assistant (GRA)-1 PhD
Student Monthly
Allowance RM 2000
Budget details
Butiran belanjawan
Amount requested by applicant
Jumlah yang dipohon
oleh pemohon
Year 1
Tahun 1
(RM)
E(ii)
Vote 21000 Travelling
Transportation/
Perjalanan
Pengangkutan
Please specify
Sila nyatakan secara
lengkap dengan
pecahannya sekali.
and
dan
Year 2
Tahun 2
(RM)
Year 3
Tahun 3
(RM)
Amount approved by VC/Dep.VC
(R&D)/Director of RMC
Jumlah yang diluluskan oleh Naib
Canselor/ TNC (P&I)/Pengarah RMC
Total
Jumlah
(RM)
Please Indicate the overall Budget
Sila nyatakan bajet secara
keseluruhan
E(iii)
Vote 24000 Rental
Sewaan
Charaterization and
evaluation services SEM,
AFM, TEM, Surface
Profilometer, Hall
Measurement, XRD, UVVIS Spectrometry
E(iv)
Vote 27000 Research Materials &
Supplies
Bekalan
dan
Bahan
Penyelidikan
Materials needed to
synthesis QDs and do
deposition of window and
absorber layers by
spin-coating and
Sputtering growth
technique
a) High Purity Sputtering
Target materials
FTO, ITO b) Chemicals:
Chemicals:
Reagents, Acids, Ethanol,
Acetone, Hexane,
Toluene, Chloroform, isobutanol c)
Substrates: Soda Lime
Glass, borosilicate
glass d) Pure Gas Supply:
N2, Ar, O2
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Appendix A
Flow Chart of Research Activities ( Please enclose in the Appendix) See
Appendix A
START
Literature Review and Simulation
Design & simulation of thin film CZTS solar cell with AMPS-1D software
Fabrications
Cleaning of SLG substrates and deposition of Cr-doped CZTS layer. Optimization
of CZTS thin film by sputtering Technique.
Structural characterization
Characterization of CZTS layer using XRD, EDX, SEM, AFM
and comparison of various deposition parameters
No
Characteristics
satisfactory?
Yes
Annealing with sulfur at various
conditions
Structural characterization
Characterization of CZTS layer using XRD, EDX, SEM, AFM
and comparison of various deposition parameters
No
Characteristics
satisfactory?
Yes
Fabrication of buffer layer, ITO and contact layer on top of CZTS
×
×
Recording and assessment of the cell parameters
Electrical characterizations
Cell Efficiency, Internal Quantum Efficiency, Open Circuit Voltage and Short
Circuit Current Measure.
Study of Electrical mobility, resistivity, dopant density, doping
type, drift velocity using Hall-effects.
Optical study of bandgap, emission properties.
Analyze Data, determine efficiency
Write Report
End
Activity Start Date End Date
Conceptual development and synthesis of Cr doped CZTS thin films
01/04/2014 31/03/2015
Micro-structural, optical and electronic property characterization of Cr-doped CZTS thin films
12/09/2014 12/12/2015
Interface study between n-type ZnS and p-type CZTS with inter-diffusion analysis in these
heterostructures
Optimization of CZTS-ZnS hetero structure configuration from the factors that govern the
optoelectronic properties and quantum efficiency of the photovoltaic devices 12/01/2016
12/03/2017
Appendix B
(c)
No
1
2
3
4
5
6
7
8
9
10
11
Methodology
Gantt Chart of Research Activities
Year
Project Activities- Month
Prepare the sputtering
targets and chamber
Sputter deposition of Crdoped CZTS layer by
varying the operating
conditions such as
deposition temperature and
RF power.
Layer characterization and
analyze.
Optimization of the sulfur
annealing process.
Layer characterization and
analyze.
Based on the results
determine the good
condition of the layer
deposition.
Fabrication of buffer layer,
ITO and contact layer of the
solar cell.
Microstructural and surface
morphology study using
SEM, AFM, and crystallinity
and defect study using Xray Diffraction (XRD).
Electrical study of mobility,
resistivity, dopant density,
doping type, drift velocity
using Hall-effects.
Optical study of bandgap,
emission properties.
Complete cell fabrication
and Solar Cell efficiency
confirmation, Final report
writing
2014-2015
2015-2016
J A S O N D J F M A M J J A S O N D J F M A M J
Milestone 1: Completion of Cr
doping of CZTS thin films by cosputtering
Milestone 2: Completion of optimizing
the optoelectronic properties of Crdoped CZTS thin films
Milestone 3: Completion of the study of interface
between Cr-doped CZTS and n-type ZnS buffer layers
Milestone 4: Completion of the optimized CZTS and
ZnS thin films in hetero-junctions for optoelectronic
property investigation
1) To investigate Cr doping mechanism in CZTS thin films grown by Magnetron sputtering.
2) To evaluate the Cr-doped CZTS thin films in terms of physical, electronic and optical
properties.
3) To examine the interface between Cr-doped CZTS and n-type buffer layers like ZnS
4) To configure the optimized CZTS and ZnS thin films in hetero-junctions for optoelectronic property
investigation.