Correlations between structure and transport in BaTiO3 Santosh Raghavan Materials Department, University of California, Santa Barbara Materials-286K 15th December, 2014 BaTiO3 d http://www.mdpi.com/sensors/sensors-1001935/article_deploy/html/images/sensors-10-01935f2-1024.png • Ferroelectric perovskite at RT (TC = 120 °C) • Used in capacitors and piezo applications A. Von Hippel, Reviews of Modern Physics, 22, 221 (1950) B. Sarkar et al, J. Phys D: App Phys, 45, 505304 (2012) 2 Local Ti distortions toward <111> octahedral faces BaTiO3 3 Q. Zhang, T. Cagin and W. A. Goddard, PNAS, 103, 14695 (2006) Local Ti distortions toward <111> octahedral faces BaTiO3 Vacancy formation Carrier transport mechanism Metal – Insulator transition 4 Q. Zhang, T. Cagin and W. A. Goddard, PNAS, 103, 14695 (2006) 1. Vacancy formation in Sr1-xBaxTiO3 In SrTiO3, La + SrTiO3 LaSr + VSr’’ + TiTi+ 3OO + 1eA-site substitution A-site vacancy formation! In BaTiO3, 4La + 4BaTiO3 4LaBa + VTi’’’’+ 4BaBa+ 3TiTi + 12OO A-site substitution B-site vacancy formation! But easier to dope the B-site with Nb instead… In Sr1-xBaxTiO3, both A-site and B-site vacancies! H.M. Chan, M.P. Harmer, D. M. Smyth, J. Am. Ceram. Soc., 69, 507 (1986) D. Makovec, Z. Samardzija, U. Delalut and D. Kolar, J. Am. Ceram. Soc., 78, 2193 (1995) L. Wang, Y. Sakka, Y. Shao, G.A. Botton, T. Kolodiazhnyi, J. Am. Ceram. Soc., 93, 2903 (2010) 5 1. Vacancy formation in Sr1-xBaxTiO3 28% La-doped Sr1-xBaxTiO3 VTi’’’’ – Most unlikely, highly energetic, major perturbation to the lattice Why does it form instead of VBa’’? Reason Ti <111> displacement, Ti—O hybridisation Off-center Ti covalently bonds to Oxygen Stabilises VTi’’’’ Excess charge can be transferred to nearby partial covalent Ti—O bonds 6 L. Wang, Y. Sakka, Y. Shao, G.A. Botton, T. Kolodiazhnyi, J. Am. Ceram. Soc., 93, 2903 (2010) 2. BaTiO3 – Polaron hopping or Band transport? Holstein’s small polaron (SP) model μho – SP hopping μb – SP band transport μH – SP Hall transport Measured μHall and μdrift are supposed to be different In BaTiO3, experimentally measured μHall and μdrift are comparable! T. Holstein, Annals of Physics, 8, 325 (1959) J.P. Boyeaux and F.M. Michel-Calendini, J. Phys. C: Solid State Phys.,12, 545 (1979) 7 2. BaTiO3 – Polaron hopping or Band transport? Ba0.996Y0.004TiO3 • Most recent Y-doped BaTiO3 samples showed mobility as high as 12 cm2/Vs at 120K! – Large polarons? • Measured μHall and μdrift are supposed to be different but are comparable • Band transport with a very heavy mass and phonon scattering? • Correlated small polaron hopping theory can account for comparable μHall and μdrift? Temperature – dependant mobility values in BaTiO3 from literature all over the map… T. Kolodiazhnyi, A. Pedric, N. Niewczas, C. Bridges, A. Safa-Sefat and J.E. Greedan, PRB. 68, 085205 (2003) D. Emin, PRL, 25, 1751 (1970) 8 2. BaTiO3 – Polaron hopping or Band transport? A. Verma, A.P. Kajdos, T.A. Cain, S. Stemmer and D. Jena, PRL, 112, 216601 (2014) • No last word in transport mechanisms even in the easier SrTiO3 system • Debate on exact BaTiO3 transport mechanisms expected to continue… 9 3. BaTiO3 – Metal-Insulator-Transition In SrTiO3, La + SrTiO3 LaSr + VSr’’ + TiTi+ 3OO + 1eSrTiO3 SrSr + VO’’+ TiTi + 2OO + ½O2 + 2e- nc1/3aH ~ 0.25 For SrTiO3 Mott criterion for MIT at nc ~ 4×1010cm-3 SrTiO3-δ Compensated carriers Mott criterion for MIT at nc ~ 1015cm-3 For BaTiO3 Mott criterion for MIT at nc ~ 1×1020cm-3 10 A. Spinelli, M. A. Torija, C. Liu, C. Jan, C. Leighton, PRB, 81, 155110 (2010) 3. BaTiO3 – Metal-Insulator-Transition In BaTiO3, BaTiO3 BaBa + VO’’+ TiTi + 2OO + ½O2 + 2e- nc1/3aH ~ 0.25 For SrTiO3 Mott criterion for MIT at nc ~ 4×1010cm-3 Compensated carriers Mott criterion for MIT at nc ~ 1015cm-3 BaTiO3-δ For BaTiO3 Mott criterion for MIT at nc ~ 1×1020cm-3 11 T. Kolodiazhnyi, PRB, 78, 045107 (2008) 3. BaTiO3-δ – Ferroelectric metal? Low symmetry phases seen even in metallic BaTiO3-δ 12 T. Kolodiazhnyi, M. Tachibana, H. Kawaji, J. Hwang and E. Takayama-Muromachi, PRL, 104, 147602 (2010) 3. BaTiO3-δ – Ferroelectric metal? • Low symmetry phases seen in metallic BaTiO3-δ • Tc (CT) reduces as [VO’’] increases • Change in slope of Tc near the MIT • Itinerant electrons seem to screen the destabilising effect of VO’’ to preserve low symmetry phases? • Slope says n > nc (1.9×1021 cm-3 ) needed to destroy the lower symmetry states • Not possible to achieve nc with VO’’ 13 T. Kolodiazhnyi, M. Tachibana, H. Kawaji, J. Hwang and E. Takayama-Muromachi, PRL, 104, 147602 (2010) 3. BaTiO3-δ – Ferroelectric metal? Highly Nb doped BaTiO3 • n ~ 2×1021 cm-3 • Sample retains long range cubic symmetry at all temperatures • Local Ti <111> displacements still persist in the sample at all temperatures!! 14 3. BaTiO3-δ – Ferroelectric metal? Highly Nb doped BaTiO3 • n ~ 2×1021 cm-3 • Sample retains long range cubic symmetry at all temperatures • Local Ti <111> displacements still persist in the sample at all temperatures!! 15 K. Page, T. kolodiazhnyi, T. Proffen, A.K.Cheetham and R. Seshadri, PRL, 101, 205502 (2008) 3. BaTiO3-δ – Ferroelectric metal? Mixture of 40% tetragonal FE phase and 60% metallic cubic phases Claim no co-existence of metallicity and ferroelectricity? • PDF still shows 2 Ti-O distances, albeit reduced 16 I-K. Jeong, S. Lee, S-Y Jeong, C. J. Won, N. Hur and A. Llobet, PRB, 84, 064125 (2011) 3. MIT due to e- doping or donor-lattice distortion? DFT says pure electron doping can cause CT transition to vanish! Claim local Ti <111> displacements vanish as well by pure electron doping Calculated nc ~ 1.36×1021 cm-3 Donors like Nb or VO’’ only accelerate the disappearance of the CT transition 17 Y. Iwazaki, T. Suzuki, Y. Mizuno and S. Tsuneyuki, PRB, 86, 214103 (2012) Integration of BaTiO3 with RTiO3/SrTiO3 interfaces Study of the BaTiO3 – RTiO3 interface R+3Ti+3O-23 • Will there still be a 2DEG at the interface? • What will happen to the insulating BaTiO3 films? ??? Ba2+O2- • Similar interface between SrZrO3 and SmTiO3 has no 2DEG! 5 nm SmTiO3 Ba2+O2- x nm BaTiO3 Ba+2Ti+4O-23 20 nm SrTiO3 LSAT • Start by inserting thin BaTiO3 layers in between SrTiO3 and SmTiO3 A. Ohtomo and H. Y. Hwang, Nature, 427, 423 (2004) R. Ohtsuka, M. Matvejeff, K. Nishio, R. Takahashi, and M. Lippmaa, Appl. Phys. Lett., 96,192111 (2010) P. Moetakef, T. A. Cain, D. G. Ouellette, J. Y. Zhang, D. O. Klenov, A. Janotti, C. G. Van de Walle, S. Rajan, S. J. Allen, and S. Stemmer, Appl. Phys. Lett. 99 (2011) 232116 18 Integration of BaTiO3 with RTiO3/SrTiO3 SrTiO3 [100] [110] [100] [110] [100] [110] BaTiO3 SmTiO3 19 Integration of BaTiO3 with RTiO3/SrTiO3 17 nm BaTiO3 / 5 nm SmTiO3 1 BaO 2 BaO 3 BaO 4 BaO 5 BaO 8 BaO 14 BaO 5 nm SmTiO3 x BaO layers 20 nm SrTiO3 LSAT • Hall coefficient indicates presence of space charge layer with ~3×1014 cm-2 of electrons similar to RTiO3/SrTiO3 • Increasing BaTiO3 film thickness, the films switch from metallic to insulating behaviour at 5 BaO (or 4 u.c. BaTiO3) 20 Integration of BaTiO3 with RTiO3/SrTiO3 17 nm BaTiO3 / 5 nm SmTiO3 1 BaO 2 BaO 3 BaO 4 BaO 5 BaO 8 BaO 14 BaO 5 nm SmTiO3 x BaO layers 20 nm SrTiO3 LSAT • If all the electrons are in the BaTiO3, the critical carrier concentration (remote doping) for metallic BaTiO3 is n3D ~ 1.2×1021 cm-3 (for 5 BaO) T. Kolodiazhnyi et al., PRL 104,147602 (2010) V. Fritsch et al., PRB 64, 045113 (2001) 21 Integration of BaTiO3 with RTiO3/SrTiO3 1 BaO 2 BaO 3 BaO 4 BaO 5 BaO 8 BaO 14 BaO 5 nm SmTiO3 x BaO layers 20 nm SrTiO3 LSAT • Mobility of the space charge layer shows a sudden drop around 3 to 5 BaO layers • Possible that BaTiO3 switches from tetragonal to cubic around 4 u.c. due to pure electron doping? 22 Summary BaTiO3 Vacancy formation Carrier transport mechanism Metal – Insulator transition 23 Q. Zhang, T. Cagin and W. A. Goddard, PNAS, 103, 14695 (2006)