Modulated Resistance Memory Device of La0.7Sr0.3MnO3 on Si Nanotips Template
C. W. Chong,1 M. J. Huang,2 H. C. Han,1,3 Y. K. Lin,4,5 J. M. Chiu,6 Y. F. Huang,7 H. J. Lin,2
T. W. Pi,2 J. G. Lin,1,a L. C. Chen,1,b K. H. Chen,1,8 and Y. F. Chen1,4
1
Center for Condensed Matter Sciences, National Taiwan University, Taipei 106 (Taiwan).
2
National Synchrotron Radiation Research Center, Hsinchu 30076 (Taiwan).
3
Research Center for New-generation Photovoltaics, National Central University, Taoyuan
32001, Taiwan.
4
Department of Physics, National Taiwan University, Taipei 106 (Taiwan).
5
Nano Science and Technology Program, Taiwan International Graduate Program,
Academia Sinica, Taipei 106 (Taiwan).
6
Department of Chemical Engineering, National Taiwan University of Science and
Technology, Taipei 106 (Taiwan).
7
Institute of Biophotonics, National Yang Ming University, Taipei 112 (Taiwan).
8
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106 (Taiwan).
a) Author to whom correspondence should be addressed. jglin@ntu.edu.tw
b) Author to whom correspondence should be addressed. chenlc@ntu.edu.tw
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Si (200)
Intensity (a.u.)
TF
D
C
B
A
(024)
(110) (104)
(214)(018)
(202/206)
(012)powder
(116)
20
30
40
50
60
2-theta ()
FIG. S1. The XRD spectra for LSMO/SiNTs devices, labeled as A, B, C and D. Diffraction
patterns for LSMO thin film (TF) (on Si(100) wafer) and powder (that synthesized using
conventional solid state reaction method) are also plotted for references.
2
B
Area ratio of peak c/b
Intensity (a.u.)
A
1.5
1.0
0.5
A
B
C
D
Samples
C
D
a
530
b
c
535
Binding energy (eV)
Fig. S2. (Right) Plot of O 1s XPS area ratio of peak c/b for various samples. Left figure
shows that each O 1s spectum can be deconvoluated into three main peaks, label as a, b and c.
According to Decorse et al.[1], the peak a, b and c are associated with the chemical shift due
to Mn, La and Sr, respectively. Higher ratio of c/b (more than one) suggested that the surface
of Sample D is mainly dominated by SrO.
[1] P. Decorse et al., J. Vac. Sci. Technol. A 19 (3), 910 (2001).
3
B
C
D
1
dM/dT (emu/K)
M(T)/M(300 K)
2
150
200
250
300
350
T (K)
0
100
200
300
Temperature (K)
FIG. S3. M-T curves for samples B, C and D. Inset shows the dM/dT, plotted for
determining Tc.
4
30.5
1
R (k)
I (mA)
100
30.0
0.01
-6
-4
-2
0
2
4
0
6
10
20
30
40
50
Pulse number
V (V)
Fig. S4. (top: from left to right) I-V curve, the EPIR and SEM image (bottom) for the thin
film device.
5