METDA Corporation
Shijiazhuang, Hebei Province , China
General Briefing
Headquarter
Research Center
34.3 h㎡
General Briefing
New Development Zone
Industrial Production Base
66.6 h㎡
METDA Overview
•
METDA is the International Marketing/Sales company of HSRI. The Holding
Company-Hebei Semiconductor Research Institute (HSRI) of Micro Electronic
Technology Development Application Corporation (METDA Corp.) was
founded in 1956 with achievements of China’s first Transistor, first Silicon IC,
first GaAs IC and first Semiconductor Laser.
•
METDA has been serving our customers in wireless, fiber optics, aerospace,
avionics, medical and satellite communication industries with highperformance, cost competitive and high reliable products.
•
METDA is structured by 9 Specialized Divisions, 7 Research Departments, 5
Pilot Production Lines, 2 Research and Development Centers, 8 High-Tech
Self-invested Corporations and Joint Ventures including several star
companies like Bowei and Puxing.
•
Overseas sales of METDA in 2013 is USD 26 million
Application Areas
 Radar
 Satellite Communications
 Aerospace
 Communication station
 Optical Communications
 Public Security
Product Offering
• GaAs and GaN MMIC & devices
• Silicon devices
• RF& Microwave Hybrid Integrated Circuits
• Microwave& Millimeter wave components, modules and subsystems
• Optoelectronic devices and modules
• MEMS devices and modules
• Packaging Solutions
GaAs Devices and MMIC
• The GaAs and GaN Division has won more than 100 National Technology
Awards
• Main categories include GaAs/GaN MMIC Power Amplifier Chip, GaAs
Power FET, GaAs MMIC Low Noise Amplifier Chip and GaAs Low Noise
FET. Also includes T/R module solutions.
• Products are widely served in wireless communication and radar markets.
Customized products can be offered
GaAs Products Range
FET
GaAs MMIC
•
Power Amplifiers
•
Low Noise FETs
•
Digital Phase Shifters
•
Power FETs
•
Digital Attenuators
•
Internally Matched FETs
•
Switches
•
Limiters
•
Digital True time Delay
•
Power divider/ combination
•
Multi-Functinal Chip
•
Low Noise Amplifiers
GaAs MMIC
GaAs Microwave& mm wave MMIC
(1)LNA
f：1-40GHz
(4) Digital Attenuator
f：1-40GHz
(2) Power Amplifier
f：1-40GHz
Pout：20-42dBm
(5) Switch
f：DC-40GHz
PIN and FET
(3)Digital Phase Shifter
f：1-40GHz
RMS：2.5°
Bits：1、4、5、6、8
(6) Limiter
f：2-6G、6-18G；C、X
Limiting Level：15dBm
Max Power：43dBm(CW)
GaAs MMIC
Ultra Low Comsuption Low Noise Amplifier
2.2×1.8×0.1mm
1.2-1.6GHz
Gain：24dB
Noise Figure：1.0dB
P-1 ：4dBm
I/O VSWR：2.0/2.0
+5V @ 20mA
2.7×1.5×0.1mm
3.2×1.25×0.1mm
5.0-6.0GHz
Gain：21dB
Noise Figure：1.2dB
P-1 ：-1dBm
I/O VSWR：1.8/1.5
+5V @ 8mA
40-46GHz
Gain：20dB
Noise Figure：3.5dB
P-1 ：0dBm
I/O VSWR：2.0/1.6
+5V @ 6mA
GaAs Power Amplifier MMIC
40-45.5GHz
1W/14dB/18%
34-36GHz
5W/15dB/20%
16-18GHz
14W/16dB/25%
8-12GHz
14W/20dB/40%
6-18GHz
5W/17dB/18%
5-6GHz
16W/24dB/38%
GaAs Power Amplifier MMIC series
band
Pout
L band
S Band
16W
C Band
X Band
Ku Band
NC11139C-812
NC1176C-1618
NC1168C-812
NC1155C-8510
NC1175C-1518
K Band
Ka Band
6～18GHz
NC1185C-506
14W
12W
10W
8W
6W
5W
NC1173C-2734
NC1148C-1314
NC1137C-5258
NC1145C-812
NC1147C-1517
NC11140C-1216 NC11118C-2224
NC1157C-2844
NC11108C-506
4W
NC1159C-1215
NC11151C-7785
3W
NC11132C2127
2W
NC1117C-2242
NC11131C2127
NC11191C-3436 NC11120C-618
NC1152C-1617
NC11112C-2022 NC11119C-2631
NC1186C-618
NC11148C-1215
NC1199C-3436
NC1128C-618
NC1160C-618
NC1126C-812
NC11115C-1518
NC11107C-3436
NC1188C-3436
NC1141C-3436
1W
NC1171C-1216
NC1172C-2426
NC1187C-506
NC1108C-8511
NC1189C-1318
0.5W
NC1170C-1216
NC1114C-2945
NC1121C-203
NC11149C-506
NC1144C-812
NC11148C-1215
NC1123C-2440
NC11145C-3337
0.2W
NC11129C-1319 NC1137C-2227 NC11114C-4854
NC11138C-812
NC11143C-1317
NC1140C-1418
NC1198C-3238
NC11141C-618
0.1W
NC1104C-5258
NC1102C-812
NC1129C-812
NC1177C-1214
NC1122C-1918
NC11142C-520
NC11111C-1927
NC11147C-1230
NC1133C-618
GaAs Internally Matched Power Transistor
14-14.5GHz
18W/5dB/23%
8.8-10GHz
35W/7.5dB/40%
7.7-8.5GHz
60W/7dB/35%
5-6GHz
80W/8dB/35%
2.2-2.3GHz
25W/13dB/50%
1.6-1.7GHz
25W/14dB/45%
GaAs Internally Matched Transistors
GaAs T/R Chipset
T/R Chipset Series：
 5.2-5.8GHz GaAs MMIC
 2-6GHz GaAs MMIC
 8.5-10.5GHz GaAs MMIC
 8-12GHz GaAs MMIC
 6-18GHz GaAs MMIC
 15-18GHz GaAs MMIC
…
34-36GHz GaAs MMIC
 16 categories from L to Ka Band
Every T/R Chipset contains
：
Limiter
LNA
Switch
Digital Attenuator
Digital Phase Shifter
Driving Amplifier
Power Amplifier
Driver
GaN Products Range
•Capability of simulation for Epitaxial Material strucutre, device
structure, circuit design of GaN power devices/MMIC within 100
GHz.
•High accurate GaN device model is built matched to the processing
platform which forms the model store for GaN Active, Passive device.
•Already shifted from 3 inches to 4 inches at 2nd Quarter of 2014.
GaN Power MMIC Product Series
34-36GHz
13W/14dB/20%
16-18GHz
30W/20dB/35%
8.0-12 GHz
50W/23dB/40%
6-18GHz
10W/16dB/20%
2-18GHz
3W/7dB/15%
2.7-3.5GHz
50W/25dB/45%
90-96GHz
0.5W/8dB/10%
GaN Power Transistor Series Products
9-10GHz
6.4-7.2GHz 130W/7dB/36%
120W/12dB/55%
5-6GHz
100W/8dB/40%
4.4-5GHz
120W/10dB/45%
2.7-3.5 GHz
150W/12dB/45%
1.8-2.3GHz
30W/13dB/60%
1.14-1.24GHz
65W/15dB/60%
0.9-2GHz
100W/11dB/45%
3mm MMIC Product
LNA
90-96GHz
I/O VSWR2.0/2.5
Gain 18dB
P-1 ：2dBm
Noise Figure 4.5dB
SPST Switch
90-96GHz
Insertion Loss
1.8dB
VSWR 2.0:1
Isolation 30dB
Speed 5ns
SPDT Switch
90-96GHz
Insertion Loss
2.5dB
VSWR 2.0:1
Isolation 25dB
Speed 5ns
Balance Mixer
RF/LO frequency：
86-100GHz
IF frequency：
DC-4GHz
InP Processing
Silicon devices
• The Silicon Research and Development facility of HSRI provides different
ranges of Silicon Transistors and Hybrid Integrated Circuit.
• Microwave Power Transistors include Continuous-wave Transistors, Linear
Power Transistors, Power Pulsed Transistors and LDMOS Power
Transistors.
• The facility has also built an advanced 4″1um production line for
customization offering.
• Products are widely served in Solid State Array Radars, Microwave
Communications and Telemetry areas; low noise chips and low power
LDMOS chips are widely served in TV receiving systems while opticdiodes are used in security systems of airports and stations.
RF& Microwave Hybrid Integrated Circuits
• The Mini-Packaged Microwave/RF circuit centre of HSRI has developed
into the largest Microwave/RF circuit supplier in China.
• Main categories include Crystal Oscillator, Surface mount RF/Microwave
cost-effective components and High Reliable RF/Microwave components.
Customized sub-system& integrated assemblies can be offered.
• Products are widely served in communication system, such as PHS, GSM,
GSM-edge, CDMA and WCDMA&WLNA system. Moreover, those high
reliable components are well equipped in aerospace& avionics industries
with frequency range up to 40 GHz.
RF& Microwave Hybrid Integrated Circuits
Filters
Oscillators
RF/Microwave Amplifiers
VCO and Integrated PLS
RF/Microwave Mini Integrated
Circuit
RF& Microwave Hybrid Integrated Circuits
New Update: TR Power Switches
Frequency ranges from P band to X band, power ranges from 10W to 1500W,
carrier and metal package can be selected.
Typical P band Parameter
Frequency：100~400MHz
Insertion Loss：0.3dB
Isolation：50dB
Peak Power：1500W
(10%Duty Cycle，Pulse width 0.1ms)
Typical X band Parameter
Frequency：8.5~10.5GHz
Insertion Loss：0.7dB
Isolation：30dB
Peak Power：20W
(40% Duty Cycle，Pulse width 6ms)
RF& Microwave Hybrid Integrated Circuits
FBAR Chip Filter：
FBAR：Film Bulk Acoustic Resonator
Typical FBAR Structure
Dielectric Filter
SAW Filter
FBAR Filter
Performance
Dielectric Filter
SAW Filter
FBAR Filter
Frequency
1MHz-10GHz
10MHz-3GHz
500MHz-10GHz
Insertion Loss
1-2dB
2.5-4dB
1-1.5dB
Rejection
<40dB
<45dB
<50dB
Temp Figure
-10～+10ppm
-35～-95ppm
-25～-30ppm
Quality Q
300-700
200-400
>1000
Power Capacity
>>1W
<1W
>1W
Anti-Static
Good
Normal
Good
Dimension
Large
Small
Minimum
Intergration
No
No
Yes
RF& Microwave Hybrid Integrated Circuits
Vertical Hole MEMS Filter (2-50GHz)
With vertical hole of silicon
cavity structure, we achieved
the 2nd generation MEMS
Filter by decreasing the
dimension to 1/3, and increasing
the rejection from 60dB to 80dB.
1st Generation Silicon Filter VS.
Traditional Cavity Filter
1st Generation Silicon Filter VS.
2nd Generation Silicon Filter
Microwave& Millimeter-wave components,
modules and subsystems
• The Microwave& Millimeter-wave Division has been providing high
reliable Microwave and Millimeter-wave modules and subsystems to the
market since 1960s.
• The division offers Microwave and Millimeter-wave T/R Modules, Power
Modules and subsystem, single/multi channel T/R subsystem, Control
Circuits and Frequency Source subsystem.
• Products are widely served in Radar and Satellite market.
Microwave& Millimeter-wave components,
modules and subsystems
C band Chip T/R module
30mm×30mm×8mm，15g
Gain：>30dB
Psat：>39dBm
Power Fluctuation：<±0.3dB
P.A.E：>25%
X band Chip T/R module
20×20×6mm
Frequency：8.6GHz-9.6GHz；
Power Output：2 W；
Rx Gain：23dB；
Rx Noise Figure：4dB；
Microwave& Millimeter-wave components,
modules and subsystems
6-18 GHz wideband Minimized T/R module
80mm×50mm×7.4mm
Frequency：6GHz~18GHz
Tx Power Output：4W
Rx Gain：23dB
Rx Noise Figure：5dB
34-36GHz 8 Channels T/R Module
40mm×35mm×4.3mm
Tx Power Output：26dBm
Rx Gain：16dB
Rx Noise Figure：4.2dB
Microwave& Millimeter-wave components,
modules and subsystems
X band Minimized Chip T/R module
驱放
移相
SP3T
负载
0.5*0.4
AMP
发射/接收
功放
数控衰减
天线
环形器
天线
限幅
功
分
驱放
移相
SP3T
功放
负载
0.5*0.4
AMP
电源
LNA
环形器
数控衰减
LNA
限幅
波控电路
（串并转换和逻辑控制）
Frequency：8～12GHz；
Psat：≥10W (CW) ；
Tx Efficiency：≥20%；
Max Input Power：≥10W；
80×30×8mm3
Microwave& Millimeter-wave components,
modules and subsystems
Millimeter Wave T/R module solution
6 chips：0.4W/ Gain 30dB
(33~37GHz) 5 bits PHS ATTEN
2 chips：24dBm/ Gain 15dB
(19~23GHz)
6 Bits PHS
5 chips：0.4W
(33~37GHz) 5 bits PHS ATTEN
2 chips：24dBm
(19~23GHz)
3 chips：0.2W/ Gain 30dB
(33~37GHz) 5 bits PHS ATTEN
Optoelectronic devices and modules
• The research and development center of Optoelectronic division engages in
the opto-semiconductor technologies and the commercialization of solid
state lighting solutions, across both visible and non-visible spectrums.
• Core products include High Power Semiconductor Laser Arrays, Pulse
Laser Arrays, High Power LED and AlGaAs/GaAs Quantum Well Infrared
Photodetector ( QWIP ).
• Products have been widely served in fiber optics, navigation, telemetry,
avionics, guidance, identification and lighting industries.
MEMS devices and modules
• The MEMS division is one of the earliest and largest MEMS Industrial
Research Centers in China.
• Products include Micro Inertial Devices, Microsensors, RF MEMS Devices
and Opto-MEMS Devices
• Products are applicable in satellite, aircraft, attitude control of carborne and
radar antenna, navigation and guidance markets.
MEMS devices and modules
 MSG Series Gyroscope
 MSA Series Accelerometer
 MPA Series Accelerometer
 MVS Series Vibration Sensor
 MFS Series Air Flow Sensor
MEMS
Gyroscope
MEMS
Accelerometer
 SiMF Series MEMS Filter
 MOA Series Optical Attenuator
 MGM Series Gas Meter
 ……
MEMS Filter
Air Flow Sensor
MEMS devices and modules
MEMS Accelerators
MEMS Accelerator
High g Accelerator Sensor
MEMS devices and modules
MEMS Optical Switch and Optical Attenuator
MEMS Opto Switch Chip
MEMS Opto Variable Attenuator Chip
1×50 MEMS Wave length Selected Switch (WSS) Chip
Packaging Solutions
• The Packaging Division has been providing components and custom
integrated packaging solutions for more than 40 years. It is awarded as
‘National Industrial Experimental Base of High-Density Packaging for
Large Scale Integrated Circuit’.
• The division has developed Microwave devices packages, High-Density
packages, Micro packages, Optoelectronic devices packages and MEMS
packages. A Multilayer Ceramic Package Development & Production Line
has been built, and equipped with fully automatic Multilayer Ceramic
Package production facility and advanced electronic packaging design
system.
Packaging Solutions
Integrated Circuit Package
MCM Plate
CBGA、CPGA、CQFP、CSOP、DIP...
LTCC, HTCC
HIC Package
Microwave Low Noise Pacakge
Microwave Package
Microwave Power Devices Pacakge
Microwave MMIC Package
Optical Package
MEMS Package
LED Package
LTCC Package
AlN Products
Packaging Solutions
Microwave and Optical-electronic Packages
Packaging Solutions
Main Manufacture Process of Optoelectronic Package
METDA Global Partners
Thank you
www.metdac.com
alex@metdac.com