Faculty of Science
Physics Department
Thin Film Lab
Influence of TiO2 Nanoparticles on performance of
Fabricated Organic Zener diode
Presented By
Ahmed Mohamed El-Sayed
El-Mahalawy
Thin Film laboratory, Physics Department, Faculty of Science, Suez Canal University, Ismailia, Egypt
Organic
Semiconductors
Organic
Semiconductors
Inorganic
Semiconductors
Lighter, more flexible, compatible
with plastic substrates and have
high electron mobility.
Rigid and should be
prepared on glass, Si,
GaAs, ….or any rigid
substrate.
Disadvantages
Biodegradable, and not explained in
details yet
Needs high vacuum
techniques and high
cost
Processing
No vacuum and no high
temperature processes(60-120oC)
Ultra Clean room
Cost
Low cost in high large production
$5 / ft2
Very high cost
$100 / ft2
Advantages
Organic Electronics
Revolution
Organic FET
Organic LED
Organic RFID
Organic PVC
First Organic Microprocessor
(2015)
Experimental Work
0
10
20
80
60
30
20
(C14 H4 O6)
40
o
50
60
(215)
100
40
(300)
500
120
(116)
1000
140
(204)
1500
160
(211)
2000
Spin coated Tio2
(004)
Intensity (Arb.Unit)
2500
(200)
Intensity (Arb.Unit)
180
(200)
As-deposited
NTCDA thin film
3000
(101)
200
(100)
3500
70
(2 )
1- Thin films of NTCDA were prepared using
physical vapor deposition technique Edwards
E306A
80
0
10
20
30
40
50
60
70
80
2degree)
2- Thin films of TiO2 were prepared using spin
coating unit as interlayer between NTCDA and
NiTTP
Preparation of
Organic Zener Diode
Characterization the
Prepared Devices
• The current–voltage (I–V) characteristics of the fabricated devices were
investigated at room temperature by using a computerized electrometer
6517B under dark condition
-5
-6
1.25x10
2.5x10
NiTPP/NTCDA diode
Forward Baising
Reverse Baising
-6
1.00x10
-5
2.0x10
Forward Baising
Reverse Baising
-5
-7
1.5x10
7.50x10
-7
5.00x10
-5
1.0x10
-7
2.50x10
-6
5.0x10
0.00
I(A)
I(A)
NiTPP/TiO2/NTCDA diode
-7
-2.50x10
-7
-5.00x10
0.0
-6
-5.0x10
-5
-7
-1.0x10
-6
-1.5x10
-6
-2.0x10
-7.50x10
-5
-1.00x10
-5
-1.25x10
-6
-1.50x10
-16 -14 -12 -10
-5
-8
-6
-4
-2
0
2
V(Volt)
4
6
8
10
12
14
16
-2.5x10
-16 -14 -12 -10
-8
-6
-4
-2
0
2
V(Volt)
4
6
8
10
12
14
16
8
5x10
-10
NTCDA/NiTTP
NTCDA/TiO2/NiTTP
NTCDA/NiTTP
NTCDA/TiO /NiTTP
2
-12
8
4x10
R(Ohm)
ln(I,A)
-14
-16
8
3x10
8
2x10
-18
-20
8
1x10
-22
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
V(volt)
0
-16
-14
-12
-10
-8
-6
-4
-2
0
2
4
6
V(Volt)
Commercial zener
diodes
Our prepared organic zener diode
15Volt (RD16S )
15volt( with and without TiO2)
Reverse current
21 μA (RD2.0S to RD120S
and 1N5221B - 1N5263B)
1.4 μA (without interlayer)and
21 μA (with TiO2 interlayer)
Dynamic
resistance
3.2 ×104Ω (RD2.0S to
RD120S
1.1×106Ω (without interlayer)
2.9 ×104Ω (with TiO2 interlayer)
Breakdown
voltage
8
10
12
Conclusion
• Organic zener diode was successfully fabricated using NTCDA as (N-type
semiconductor) and NiTTP as (P-type semiconductor)
• TiO2 nano-particels interlayer improved the performance of NTCDA/NiTTP
zener diode which was comparable to commercial zener diodes.
Future work
• We are going to complete this experiment by investigating the
effect of interlayer thickness.
• We are planning to exploit sensitivity of NTCDA in fabrication gas
sensors in the form of diode
• We are planning to use this potential organic material NTCDA in
photovoltaic applications in elastic forms.
The Only Published Organic Zener
Diode