The revolution
in power electronics –
Gallium NitriDe (GAN)
based power transistors
in 100V and 650V
Tomorrow‘s power today®
The revolution in power electronics –
Gallium Nitride based power transistors in 100V and 650V.
GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors has launched the first
commercially available GaN based E-HEMTs (Enhancement Mode High Electron Mobility Transistor) in 100V and
650V featuring the ultra low inductance and highly thermal efficenct GaNPXTM packaging technology.
Based on GaN Systems’ proprietary Island Technology®, its devices significantly outperform comparable
silicon based devices in terms of higher switching frequency and efficiency.
GaNPXTM
compared to a TO-220AB
Benefits of Gallium Nitride based power transistors:
Applications to benefit are ranging from onboard battery charging, high-voltage DC-DC and AC-DC conversion,
UPS, air-conditioning, appliances, heavy-duty battery-operated power tools and E-bikes.
GaN Systems’ comprehensive
product range will enable the
development of next-generation
power conversion technology,
leading to higher efficiency,
smaller board layouts and fewer
peripheral components.
Using GaN E-HEMTs over silicon-based
transistors will lead to better performance
on significantly smaller PCB layouts.
performance and Specification
• F aster switching >10MHz
• Lower Rds(on)
• >13 x better Qg*Rds(on) FOM
• Easy gate drive +6V
• Increased efficiency
• Less board area per watt
• Lighter overall system
• Simplified cooling
• Lower cost
PCB layout advantages with top-side / bottom-side cooled parts
Top side cooling
for direct temperature flow from the
GaN device to the heatsink and lowest
thermal path
Bottom side
cooling
for direct heatsink mounting
on the bottom of the pcb
Line-up GaN Systems:
Part No.
100V 650V Max. RDS(ON) typ.
Type Type Current
at 25°C
(A)
(mΩ)
QG
typ.
(nC)
GS61004B
•
45
15
6.2
GS61008P
•
90
7
12
GS61008T
•
90
7
12
7
200
1.5
Top
Bottom
side
side
cooled cooled
•
•
•
GS66502B
•
GS66504B
•
15
100
3
GS66506T
•
22.5
67
4.6
GS66508B
•
30
50
5.8
GS66508P
•
30
50
5.8
GS66508T
•
30
50
5.8
•
GS66516T
•
60
25
12
•
•
•
•
•
•
EVALUATION BOARD Available
The GS66508T-EVBHB is a half bridge evaluation board to allow the user to easily evaluate all features of the GaN
based power transistor technology. The board is configurable in operation modes for common testing/evaluation of
double pulse tester, buck or boost topologies. It includes all essential components for basic operation.
Our Service
GaN Systems manufactures a range of Gallium Nitride high power transistors
for consumer, enterprise, industrial, solar / wind / smartgrid and transportation
power conversion applications.
ECOMAL Europe as the official distribution partner for GaN Systems is committed to assisting the manufacturer in
launching this revolutionary technology into the market of power electronics. We support you in following services:
• Sampling: ECOMAL offers samples on all available GaN Systems E-HEMTs ex stock
• Logistic solutions and product availability: support production volumes with stock and customised logistic
solutions
• Technical application support: we help you to incorporate GaN E-HEMTs into your design and pick the right
peripheral discrete semiconductors and passive components.
For technical questions please contact:
ECOMAL Europe GmbH
Wilhelm-Schauenberg-Str. 7 · D-79199 Kirchzarten · www.ecomal.com
Technical Support Center Europe
technique@ecomal.com