報告人:洪國慶
Outline
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INTRODUCTION
EXPERIMENTAL DETAILS
RESULTS AND DISCUSSION
CONCLUSION
REFERENCES
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INTRODUCTION
• InGaN/GaN MQW structures have a low internal quantum efficiency
due to the poor confinement of carriers by the small band offset between
the InGaN well layer and the GaN barrier.
• A delta doping process has recently been shown to improve the internal
quantum efficiency of a quantum dot laser by introducing a high carrier
injection layer, lowering the transparency current density, increasing the
modulation bandwidth of the QW laser,and improving the temperaturerelated stability of the QW laser in the optoelectronic performance.
• In this letter, we report on an investigation of the effect of Si delta
doping of the GaN barrier of a MQW on the optical and electrical
properties of a InGaN/GaN UV LED with an emission wavelength of
385 nm.
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