High speed high density and low power TCAM

advertisement

商业运营计划

High speed high density and low power TCAM

Xiaohua ( Paul ) Huang

CMOS Micro Device Inc www.ec-chip.com

List of Content

•   Introduction

•   Differential TCAM cells

•   Differential Match line sensing circuit

•   Multi-level Hit ahead Hierarchical Priority encoding

•   Sample Design

Introduction

Content-addressable memory (CAM) is used for parallel searching applications.

Binary CAM is the simplest type of CAM which uses data search words consisting entirely of 1s and 0s.

Ternary CAM (TCAM) allows a third matching state of "X" or "don't care" for one

or more bits in the stored data word, thus adding flexibility to the search.

For example, a ternary CAM might have a stored word of "1 0 X X 0“

which will match any of the four search words "1 0 0 0 0",

"1 0 0 1 0",

"1 0 1 0 0",

"1 0 1 1 0".

The added search flexibility comes at an additional cost over binary CAM

as the internal memory cell must now encode three possible states instead of

the two of binary CAM.

This additional state is typically implemented by adding a mask

bit ("care" or "don't care" bit) to every memory cell.

CAM/TCAM block

CAM cell

CAM match sensing circuit

Single Match line , slow when more bits

Differential match sensing

Differential match ( hit ) line sensing , faster

Differential TCAM cell

Differential match ( hit ) line TCAM cell

Dummy Differential TCAM cells

Dummy Differential TCAM cell, valid bit

Dummy differential CAM cell

Dummy Differential CAM cell

High speed differential sensing

High speed differential match ( hit ) line sensing circuit

Wave Form

High speed differential match ( hit ) line sensing voltage signal

Low power differential TCAM sensing

Low power differential match ( hit ) line sensing circuit

Wave Form

Low power differential match ( hit ) line sensing voltage signal

Hierarchical Structure

High Density TCAM are divided into many block, arranged in column and row, for high speed hierarchical priority encoding.

hierarchical priority encoding

H

0

=A

0

H

1

=H

0

* A

1

= A

0

* A

1

H

2

= H

1

* A

2

= A

0

* A

1

* A

2

H n

= H n-1

* A n

hierarchical priority encoding

Hierarchical priority encoding

Second Level Priority Encoding

Dynamical Priority encoding circuit

Priority Encoding circuit

Fast Hit Generation

two level hit generation circuit

MUX selection circuit

MUX circuit

Sample feasible design

1. 90nm TSMC process, divided into 64-block, at 250 Million look up/s

( 250MHz)

Power =8.78 W, die size = 1.4 X1.5 = 2.1 CM ^2

---------------------------------------------------------------------------------------------------------------

2.

40nm TSMC process, divided into 128- block, each block 1K X 160 bit

With priority encoding built in.

Designed with logic rule( TCAM cell is designed in logic rule)

Die size: 46.8 mm^2

power is 17 W at 1GHz speed at typical corner.

speed at typical corner is above 1.0 GHz.

Two cycle delay.

Sample Design

65nm SMIC TCAM

test chip

40nm TCAM IP

Summary

1.

Differential TCAM cell and differential match line(hit line) sense circuit achieve high speed and low power,

make TCAM design circuit same as SRAM

2.

Hierarchical priority encoding logic make the high density

TCAM + priority encoding circuit design structural and fast.

3. Combine 1 and 2 , it is convenient to build TCAM compiler and design high density and high speed TCAM.

Reference

1. US patents: 6744653 , 2004.6.1

“CAM cells and differential sense circuits for content addressable   memory(CAM)“

2. US patents.: 7,652,903 , 2010.1.26 ,

   “HIT AHEAD HIERARCHICAL SCALABLE PRIORITYENCODING

LOGIC AND CIRCUITS“

Download