IEEE IMS / MTT-S 2012 – Montreal, Canada

Mobile Devices
• Smartphones
• Tablets
• Machine-to-machine
Q1 2012 Revenue by Market
Networks
22%
Defense &
Aerospace
10%
Networks
• Optical
• CATV / FTTH
• Point-to-point radio
Defense & Aerospace
• Radar
• Communications
• Electronic warfare
Mobile
Devices
68%
© 2012 TriQuint Semiconductor, Inc.

Mobile Devices Data Traffic Higher Power, Higher Efficiency
© 2012 TriQuint Semiconductor, Inc.

TQP25
TQP15
150mm
Optical pHEMT
TQBiHEMT
Integration
TECHNOLOGY
TQTRx
TQPED
100mm
E-Beam pHEMT
Performance
GaN
HBT
TQHBT3-V
TQHBT3
© 2012 TriQuint Semiconductor, Inc.

TriQuint’s current qualified GaN on SiC Material
– Two sources of supply
100mm material and process was qualified in April 2011
– Foundry fully transitioned to 100mm wafers
Process Features
– 0.25
µ m gate length HEMT
• Operation through 20 GHz
• ≤ 40 Volt Operation
– Dual field plate
– Full 3MI interconnect and passive elements
– Back side SiC via etch process with cap-over-via
– Eutectic solderable backside metallization
0.25
µ m Gallium Nitride Cross Section
Status
– Released to production in 2008, ADS and AWR PDKs available
© 2012 TriQuint Semiconductor, Inc.

• Five times faster, higher frequency, faster on-chip logic
• Five times more power, smaller die, increased range and sensitivity
• Higher efficiency (10-20%), simplifies system integration
• Higher temperature operation (up to 225 ° C), more robust, enables new applications
Bandwidth
Electronic
Warfare
More
Power
Next-Generation
Radars
Higher
Efficiency
Communication
Systems
Higher
Temp
New Sensors
New Missions
Advanced
R&D
500 GHz /
500V per ns
© 2012 TriQuint Semiconductor, Inc.

6.5W Ku-band GaAs Power Amplifier
• Addressing key high-performance needs
– Networked communications
– Electronic warfare systems
– ISR (intelligence, surveillance and reconnaissance) systems
– GaN delivers:
• Greater efficiency
• Reduced BOMs
• Reduced / eliminated combining losses
20W Ku-band GaN
40W GaN
Switch
30W Wideband
GaN PA
55W Power
Transistor
20W Ku-band
GaN PA
© 2012 TriQuint Semiconductor, Inc.

Tomorrow’s Performance Today
TGA2573
2-18 GHz, 10W
TGA2576-FL
Next Generation
TGA2572-FL
14-16 GHz, 16W
TGS2351-SM
DC-6 GHz, 40W
© 2012 TriQuint Semiconductor, Inc.

• Power amplifiers: GaN has 2x to 4x the power density of GaAs
– Higher W/mm results in less combining loss, hence increased PAE
– Higher Vd operation results in system power efficiency improvements
– Cost effective power amplifier solution
• High power switches
– High breakdown and current enable high voltage and high power switches
– 40W through 6 GHz; 20W to 12 GHz and 10W to 18 GHz available today
– High input survivability for reduced system NF
– Comparable NF to similar pHEMT technologies but at higher voltage
• High power limiters
© 2012 TriQuint Semiconductor, Inc.

4x4 Ceramic QFN
© 2012 TriQuint Semiconductor, Inc.

• Examples of GaN products
Product Features
• Frequency: DC-3.5 GHz
• Linear Gain: >15dB at 3.5 GHz
• Operating voltage: 28V
• Output power (P3dB): 55W at 3.5 GHz
• Lead-free and RoHS compliant
Product Features
• Frequency: DC-6 GHz
• Output power (P3dB): 18W at 6 GHz
• Linear gain: >10dB at 6 GHz
• Operating voltage: 28V
• Low thermal resistance package
High RF power – small form factor
© 2012 TriQuint Semiconductor, Inc.

TWT
Replacements
Product Features
Technology
Frequency
Psat
PAE
DC Bias
GaN on SiC
9-10
50W (pulsed)
45%
24V
Product Features
Technology
Frequency
Psat
PAE
LS Gain
Bias
GaN on SiC
7.9-8.4
85W (CW)
>40%
9dB
24V
Product Features
Technology
Frequency
Psat
PAE
LS Gain
DC Bias
GaN on SiC
5.9-6.4
85W (CW)
45%
11dB
24V
© 2012 TriQuint Semiconductor, Inc.

Product Features
Technology
Frequency
Psat
PAE
LS Gain
SS Gain
DC Bias
GaN on SiC
14-15.5 GHz
20W
30%
23dB
28dB
25V, 1A
Ku-band Communications
11.38x17.32mm
Product Features
Technology
Frequency
Psat
PAE
LS Gain
SS Gain
Bias
0.25
µ m GaN
2.5-6 GHz
30W
>30%
19dB
26dB
30V, 1.55A
11.4x17.3x3mm
Broadband EW / Instrumentation
© 2012 TriQuint Semiconductor, Inc.

Product Features
Technology
Frequency
Pwr Handling
Insertion Loss
Isolation
Sw Speed
Control
GaN on SiC
DC-6 GHz
<40W
<1.0dB
-40dB
<35nS
-40 / 0V
4x4 Ceramic QFN
Product Features
Technology
Frequency
Pwr Handling
Insertion Loss
Isolation
Sw Speed
Control
GaN on SiC
DC-12 GHz
<20W
<1.0dB
-35dB
<35nS
-40 / 0V
1.15x1.65mm
© 2012 TriQuint Semiconductor, Inc.

• Government-funded GaN programs
Program
TITLE III
NJTT
NEXT
MPC
Goal Outcome
Business
Significance
Manufacturing Readiness
Higher Yield
Faster Cycle Times
Better Models
Lower Cost
Better Thermal Management
Higher Power Density for
Same Reliable Technology
Faster Devices
E/D Integration
Shorter Gate Technology
E/D Technology
Better Performance
(Bandwidth)
V, E, W - Band Technology
Mixed Signal
Switch Based Amplifier Very Fast GaN switch More Efficient Amplifiers
W-band LNA E/D Based LNA Reduced NF >90 GHz Extend RF and Range
© 2012 TriQuint Semiconductor, Inc.

GaN Process Name Frequency Drain Bias
0.25µm
0.15µm
< 0.1µm
THz E/D GaN
DC-20 GHz
DC-40 GHz
DC-100 GHz
DC-500 GHz
≤ 40V
≤ 20V
≤ 15V
≤ 15V
Status
In Production
In Release
Research
Research
Broad GaN process roadmap
© 2012 TriQuint Semiconductor, Inc.

• GaN is a maturing technology offering significant performance and lifetime advantages over GaAs
• GaN has broad appeal across many markets due to:
– High power density
– High thermal conductivity substrate
– Low NF
• TriQuint has been a GaN R&D innovator since 1999, currently leading five
• TriQuint offers a broad range of GaN solutions and services
– FETs, MMICs, switches, packaged transistors / amplifiers / switches
– Integrated assemblies and foundry services
• TriQuint is developing new GaN processes and product solutions that improve efficiency, reduce BOMs and satisfy requirements beyond the reach of other semiconductors
© 2012 TriQuint Semiconductor, Inc.