Semiconductors

In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field.

Tin (IV) oxide, also known by the systematic name stannic oxide in the older notation, is the inorganic compound with the formula SnO2.

Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.

Cadmium sulfide is the inorganic compound with the formula CdS.

Mercury sulfide, mercuric sulfide, mercury sulphide, or mercury(II) sulfide is a chemical compound composed of the chemical elements mercury and sulfur.

Zinc selenide (ZnSe) is a light-yellow, solid compound comprising zinc (Zn) and selenium (Se).

Zinc telluride is a binary chemical compound with the formula ZnTe.

Zinc sulfide (or zinc sulphide) is an inorganic compound with the chemical formula of ZnS.

Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.

Semiconductors are crystalline or amorphous solids with distinct electrical characteristics.

Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium.

Cadmium oxide is an inorganic compound with the formula CdO.

Lead(IV) sulfide is a chemical compound with the formula PbS2.

Lead(II) sulfide (also spelled sulphide) is an inorganic compound with the formula PbS.

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.

Aluminium phosphide (aluminum phosphide) is a highly toxic inorganic compound with the chemical formula AlP used as a wide band gap semiconductor and a fumigant.

Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a compound of silicon and carbon with chemical formula SiC.

Mercury telluride (HgTe) is a binary chemical compound of mercury and tellurium.

Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium.

Aluminium nitride (AlN) is a nitride of aluminium.

Bismuth telluride (Bi2Te3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride.

Beryllium telluride (BeTe) is a chemical compound of beryllium and tellurium.

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.

Mercury selenide (HgSe) is a chemical compound of mercury and selenium.

Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb).

Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic.

Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.

Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of boron and phosphorus.

Cadmium selenide is an inorganic compound with the formula CdSe.

Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

Solid-state electronics are those circuits or devices built entirely from solid materials and in which the electrons, or other charge carriers, are confined entirely within the solid material.

Bismuth antimonides, Bismuth-antimonys, or Bismuth-antimony alloys, (Bi1-xSbx) are binary alloys of bismuth and antimony in various ratios.

Weili Dai (simplified Chinese: 戴伟立; traditional Chinese: 戴偉立; pinyin: Dài Wěilì) is a Chinese-born American businesswoman.

Photoelectrochemical processes are processes in photoelectrochemistry; they usually involve transforming light into other forms of energy.

Isobutylgermane (IBGe, Chemical formula: (CH3)2CHCH2GeH3), is an organogermanium compound.

Zinc oxide is an inorganic compound with the formula ZnO.

Molybdenum disulfide is the inorganic compound composed of only two elements: molybdenum and sulfur.

Lead telluride is a compound of lead and tellurium (PbTe).