2017-07-28T17:55:34+03:00[Europe/Moscow] en true Electron mobility, Tin dioxide, Tin telluride, Cadmium sulfide, Mercury sulfide, Zinc selenide, Zinc telluride, Zinc sulfide, Aluminium arsenide, Semiconductor, Copper indium gallium selenide, Cadmium oxide, Lead(IV) sulfide, Lead(II) sulfide, Gallium nitride, Aluminium phosphide, Silicon carbide, Mercury telluride, Cadmium telluride, Aluminium nitride, Bismuth telluride, Beryllium telluride, Indium phosphide, Mercury selenide, Indium antimonide, Indium arsenide, Indium nitride, Gallium antimonide, Boron phosphide, Cadmium selenide, Gallium phosphide, Gallium arsenide, Solid-state electronics, Bismuth antimonide, Weili Dai, Photoelectrochemical process, Isobutylgermane, Zinc oxide, Molybdenum disulfide, Lead telluride flashcards Semiconductors
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  • Electron mobility
    In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an electric field.
  • Tin dioxide
    Tin (IV) oxide, also known by the systematic name stannic oxide in the older notation, is the inorganic compound with the formula SnO2.
  • Tin telluride
    Tin telluride is a compound of tin and tellurium (SnTe); is a IV-VI narrow band gap semiconductor and has direct band gap of 0.
  • Cadmium sulfide
    Cadmium sulfide is the inorganic compound with the formula CdS.
  • Mercury sulfide
    Mercury sulfide, mercuric sulfide, mercury sulphide, or mercury(II) sulfide is a chemical compound composed of the chemical elements mercury and sulfur.
  • Zinc selenide
    Zinc selenide (ZnSe) is a light-yellow, solid compound comprising zinc (Zn) and selenium (Se).
  • Zinc telluride
    Zinc telluride is a binary chemical compound with the formula ZnTe.
  • Zinc sulfide
    Zinc sulfide (or zinc sulphide) is an inorganic compound with the chemical formula of ZnS.
  • Aluminium arsenide
    Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.
  • Semiconductor
    Semiconductors are crystalline or amorphous solids with distinct electrical characteristics.
  • Copper indium gallium selenide
    Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium.
  • Cadmium oxide
    Cadmium oxide is an inorganic compound with the formula CdO.
  • Lead(IV) sulfide
    Lead(IV) sulfide is a chemical compound with the formula PbS2.
  • Lead(II) sulfide
    Lead(II) sulfide (also spelled sulphide) is an inorganic compound with the formula PbS.
  • Gallium nitride
    Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.
  • Aluminium phosphide
    Aluminium phosphide (aluminum phosphide) is a highly toxic inorganic compound with the chemical formula AlP used as a wide band gap semiconductor and a fumigant.
  • Silicon carbide
    Silicon carbide (SiC), also known as carborundum /kɑːrbəˈrʌndəm/, is a compound of silicon and carbon with chemical formula SiC.
  • Mercury telluride
    Mercury telluride (HgTe) is a binary chemical compound of mercury and tellurium.
  • Cadmium telluride
    Cadmium telluride (CdTe) is a stable crystalline compound formed from cadmium and tellurium.
  • Aluminium nitride
    Aluminium nitride (AlN) is a nitride of aluminium.
  • Bismuth telluride
    Bismuth telluride (Bi2Te3) is a gray powder that is a compound of bismuth and tellurium also known as bismuth(III) telluride.
  • Beryllium telluride
    Beryllium telluride (BeTe) is a chemical compound of beryllium and tellurium.
  • Indium phosphide
    Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
  • Mercury selenide
    Mercury selenide (HgSe) is a chemical compound of mercury and selenium.
  • Indium antimonide
    Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb).
  • Indium arsenide
    Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic.
  • Indium nitride
    Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.
  • Gallium antimonide
    Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.
  • Boron phosphide
    Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of boron and phosphorus.
  • Cadmium selenide
    Cadmium selenide is an inorganic compound with the formula CdSe.
  • Gallium phosphide
    Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.
  • Gallium arsenide
    Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
  • Solid-state electronics
    Solid-state electronics are those circuits or devices built entirely from solid materials and in which the electrons, or other charge carriers, are confined entirely within the solid material.
  • Bismuth antimonide
    Bismuth antimonides, Bismuth-antimonys, or Bismuth-antimony alloys, (Bi1-xSbx) are binary alloys of bismuth and antimony in various ratios.
  • Weili Dai
    Weili Dai (simplified Chinese: 戴伟立; traditional Chinese: 戴偉立; pinyin: Dài Wěilì) is a Chinese-born American businesswoman.
  • Photoelectrochemical process
    Photoelectrochemical processes are processes in photoelectrochemistry; they usually involve transforming light into other forms of energy.
  • Isobutylgermane
    Isobutylgermane (IBGe, Chemical formula: (CH3)2CHCH2GeH3), is an organogermanium compound.
  • Zinc oxide
    Zinc oxide is an inorganic compound with the formula ZnO.
  • Molybdenum disulfide
    Molybdenum disulfide is the inorganic compound composed of only two elements: molybdenum and sulfur.
  • Lead telluride
    Lead telluride is a compound of lead and tellurium (PbTe).