III-V compounds

2017-07-28T19:53:26+03:00[Europe/Moscow] en true Boron nitride, Aluminium arsenide, Aluminium phosphide, Gallium antimonide, Gallium phosphide, Indium arsenide, Indium nitride, Indium phosphide, Aluminium nitride, Gallium arsenide, Boron phosphide, Gallium nitride, Indium antimonide, Aluminium antimonide, Aluminium gallium indium phosphide, Aluminium indium arsenide, Boron arsenide flashcards III-V compounds
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  • Boron nitride
    Boron nitride is a heat- and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN.
  • Aluminium arsenide
    Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.
  • Aluminium phosphide
    Aluminium phosphide (aluminum phosphide) is a highly toxic inorganic compound with the chemical formula AlP used as a wide band gap semiconductor and a fumigant.
  • Gallium antimonide
    Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.
  • Gallium phosphide
    Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.
  • Indium arsenide
    Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic.
  • Indium nitride
    Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.
  • Indium phosphide
    Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
  • Aluminium nitride
    Aluminium nitride (AlN) is a nitride of aluminium.
  • Gallium arsenide
    Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.
  • Boron phosphide
    Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of boron and phosphorus.
  • Gallium nitride
    Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.
  • Indium antimonide
    Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb).
  • Aluminium antimonide
    Aluminium antimonide (AlSb) is a semiconductor of the group III-V family containing aluminium and antimony.
  • Aluminium gallium indium phosphide
    Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices, as it spans a direct bandgap from deep ultraviolet to infrared.
  • Aluminium indium arsenide
    Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1-xAs), is a semiconductor material with very nearly the same lattice constant as GaInAs, but a larger bandgap.
  • Boron arsenide
    Boron arsenide is the chemical compound BAs.