III-V compounds

Boron nitride is a heat- and chemically resistant refractory compound of boron and nitrogen with the chemical formula BN.

Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide.

Aluminium phosphide (aluminum phosphide) is a highly toxic inorganic compound with the chemical formula AlP used as a wide band gap semiconductor and a fumigant.

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.

Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.

Indium arsenide, InAs, or indium monoarsenide, is a semiconductor composed of indium and arsenic.

Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics.

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.

Aluminium nitride (AlN) is a nitride of aluminium.

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of boron and phosphorus.

Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes since the 1990s.

Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb).

Aluminium antimonide (AlSb) is a semiconductor of the group III-V family containing aluminium and antimony.

Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of novel multi-junction photovoltaics and optoelectronic devices, as it spans a direct bandgap from deep ultraviolet to infrared.

Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1-xAs), is a semiconductor material with very nearly the same lattice constant as GaInAs, but a larger bandgap.

Boron arsenide is the chemical compound BAs.