Simulation Working Group Meeting
chaired by Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Scienc)
from Wednesday, March 27, 2013 at 09:00 to Thursday, March 28, 2013 at 18:00 (Europe/Zurich)
at CERN ( 160-1-009 )
Descripti ..This is just a collection of presentation (timing might shift!) mm
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 Wednesday, March 27, 2013
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 10:00 - 18:00 Meeting (with video)
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Agenda:
1. Status of Si irradiated detectors simulation with professional software.
1.1 Unified 2 Deep level model for the current and E(x) simulations. PTI will start, Delhi University,
and …….)
1.2 Results of E(x) simulation. Discussion and presentation.
1.2 How to “calibrate” 2 deep level model? PTI will start, high activity of Ljubljana group is very
welcome and …..
1.2 Experimental data for E(x) in irradiated detectors. Discussion and presentation.
2. Parameters and parameterization for the 2 deep level model followed from simulations. PTI will start, and
…….
3. Future step – Charge Collection Efficiency (no avalanche)
3.1 Trapping time parameterization. PTI will start, high activity of Ljubljana group is very welcome and
……
3.2 Detector properties parameterization. Table of standard parameters for CCE simulation
SWG meeting, CERN, March 27,28-2013
Vladimir Eremin (Ioffe Physical Technical Institute of Russian Academy of Science)
10:00 Introduction45'
 10:30 PTI results on I(T) and E(X) simulations with two midgap energy levels.
Speaker: Elena Verbitskaya (Ioffe Physical Technical Institute of Russian Academy of Science)
 11:00 Simulations of irradiated detectors: E(x) & parameterization30'
Speaker: Timo Hannu Tapani Peltola (Helsinki Institute of Physics (FI))
 11:30 Comparison of radiation damage models for n-in-n sensors20'
Speakers
Dr. Marco Bomben (U. di Trieste), Marco Bomben (Univ. P. et Marie Curie (Paris VI) (FR))
:
 Thursday, March 28, 2013
 10:00 - 17:00 Meeting (no video)
Convener:
1.
1.1
1.2
1.3
Location:
Round table discussion
Silvaco, Sinopsys and other software. Programming problems
Conclusions
Different
155-R-047
This is the simulation working group mailing list.
You are welcome to participate.
https://e-groups.cern.ch/e-groups/Egroup.do?egroupId=10074036
SWG meeting, CERN, March 27,28-2013
Status and program
by
Vladimir Eremin
Simulation group meeting
March 27, 28, 2013
CERN
Electric field evolution with fluence
in Hamburg model
P+
N+
_
+
Neff(F)
Space Charge Sigh Inversion (SCSI)
Fscsi ~ 1e13 n/cm2
E(x)
F=0
x
V.Eremin, RD50, Nov 2011
PTI model for
electric field distribution in irradiated detectors
V. Eremin, E. Verbitskaya, Z. Li. “The Origin of Double Peak Electric Field Distribution
in Heavily Irradiated Silicon Detectors”, NIM A 476 (2002) 556.
-V
Neff
trapping
Trapping of free carriers
from detector reverse current
to midgap energy levels
of radiation induced defects
leads to DP E(x)
DLs responsible for DP E(x) are midgap DLs:
DD: Ev + 0.48 eV
DA: Ec – (0.52 – 0.595) eV
V.Eremin, RD50, Nov 2011
The idea for irradiated detectors
simulation
On bases of minimized set microscopic parameters
of irradiated silicon to reconstruct the detector
performance at certain operational conditions.
We use 2 mid gap energy levels DD and DA to
reconstruct and predict:
1-st step – E(x) distribution
2-nd step – bulk generated current + E(X)
3-rd step - bulk generated current + E(X) + trapping
Parameterization (cross-test)
(as presented in Bari, 31 May 2012)
•
•
•
•
•
•
•
•
•
•
•
•
•
•
The parameters listed below are chosen to have the more pronounced DP effect
and do not correspond to the correct description of the detector performance.
The PTI set of parameters for cross-test of modeling software:
Detector thickness -------------------------------------------------------- d=0.03 cm
Concentration of shallow donors (phosphorus) ------------NSD = 6e11 cm-3
Bulk generated current calculated from
Single level model
Effective energy of current generating level----------------- Ej = 0.65 eV
Effective cross-section of current generating level --------- sj = 1e-13cm2
Introduction rate of current generating level ---------------- Gj = 1 cm-1
Radiation induced deep levels
Type of defect
Activation energy, eV
Deep donor
Deep acceptor
EDD - EV = 0.48
EDA - EV = 0.595
Trapping cross
section, cm2
eh = 1e-15
eh = 1e-15
Introduction rate, cm-1
GDD = 1
GDA = 1
We will compare the results of simulation for the following set of parameters:
T = 290K and 260K
V= 200V, 300V, 500V, 1000V at F = 1e15cm-2
F= 1e13, 1e14, 3e14, 1e15, 3e15 cm-2 at V=300V
SWG meeting, CERN, March 27,28-2013
Simulated electric field in irradiated
detector in the frame of PTI model
8.E+07
2.E+13
7.E+07
2.E+13
4.0E+4
Neff
4.E+07
p(x)
3.E+07
2.E+07
5.E+12
0.E+00
0.00
-5.E+12
0.01
0.02
0.03
0.04
-1.E+13
-2.E+13
-2.E+13
1.E+07
0.01
0.02
0.03
0.04
Distance from p+, cm
0.05
3.0E+4
2.5E+4
2.0E+4
1.5E+4
1.0E+4
5.0E+3
-3.E+13
0.E+00
0.00
0.05
Electric field, V/cm
n(x)
5.E+07
E(x)
3.5E+4
1.E+13
6.E+07
Concentrations, cm-3
Concentrations, cm-3
F=1e15, V=400V, d=300 um, T=260K
0.0E+0
0
-3.E+13
0.01
0.02
0.03
0.04
0.05
Distance from p+, cm
Distance from p+, cm
MGL parameters in the PTI model
V.Eremin, RD50, Nov 2011
The main results
on simulations presented in Bari - 2012
1. The simulation community is formed and it is active. New participants are
welcome.
2. The generation of detector bulk current can be introduced into TCAD via
parameter “Life time”.
3. With the parameter ‘Life time” the DP E(x) effect can be simulated
4. Clarification how the “Life time” is related with the bulk generated current in
TCAD program is an essential task
Conclusion:
The TCAD can be applied for E(X) simulation in irradiated Si detectors
and
We expect today to see the results on E(x) calculation with 2MGL
which are extracted from the bulk generated current.
The idea for irradiated detectors
simulation
On bases of minimized set microscopic parameters
of irradiated silicon to reconstruct the detector
performance at certain operational conditions.
We use 2 mid gap energy levels DD and DA to
reconstruct and predict:
1-st step – E(x) distribution
2-nd step – bulk generated current + E(X)
3-rd step - bulk generated current + E(X) + trapping
SWG meeting, CERN, March 27,28-2013
2DL model calibration
Not defined values for irradiated detectors modeling:
1. Microscopic effective parameters for midgap levels:
activation energy – known from I(T) Arhenius plot;
N(DD) and N(DA) as well as their trapping cross-sections σ(DD), σ(DA) could not be
measured directly.
only the products N x σ are known from the I(T) experiment
additional date for I(T) from DLTS and TSC are important to increase the product
accuracy
2. E(X) is the independent source for the microscopic parameters evaluation by
comparison of the simulated E(x) with the experimental one (microscopic E(X)
model calibration)
This requires edge TCT results treated with parameterized Vdr(E).
Conclusion:
Any results from the groups which have advanced edge TCT are very welcome
SWG meeting, CERN, March 27,28-2013
Trapping probability
t-1 = 1/τ(0) + σ*Vth*Ntr = 1/τ(0) +bF
A. Bates, ….. NIM A 555 (2005) 113
I. Mandic, ...... NIM A 612 (2010) 474
Trapping probability, [s-1cm2]
neutrons
protons
βe
3.2x10-7
5.5x10-7
βh
3.5x10-7
7.1x10-7
SWG meeting, CERN, March 27,28-2013
Can we explain trapping in the frame of
two DL model?
Estimations:
With β = 5e-7[s-1cm2] and fluence F = 1e14 [cm-2]
the trapping time is 2e-8 [s]
and with
trapping cross-section σ = 1e-14 [cm2]
thermal velocity Vth = 2e7 [cm s-1]
Nt = 1/[σVthT] = 2.5e14 [cm-3] or K(Nt) = 2.5
From PTI bulk generated current parameterization
K(DA) = 1.6
K(DD) = 0.8
Conclusion:
K(Nt), K(DA) and K(DD) have the same range and therefore the 2DL model
has a chance to be extended to CCE(F).
SWG meeting, CERN, March 27,28-2013
Phenomena parameterization
Temperature range: 77 – 300K
Electric field range: 0 – 2e5 V
Phenomenon
parameter
Drift properties
Electron drift velocity vs. T, E
formula
Source, Notes
Hole drift velocity vs. T, E
Trapping
Electron thermal velocity vs. T
12e5 * T^0.5
Hole thermal velocity vs. T
9.09e5 * T^0.5
Cross-sections vs. T
Bulk current
generation
Density of states Nc
Density of states Nv
Intrinsic concentration vs. T
Cross-sections vs. T
Notes:
Cross-sections vs. E dependences should be switched of
Eg(T) is considered in intrinsic concentration only
Activation energy does not depend on T
SWG meeting, CERN, March 27,28-2013
Waiting field parameterization
Source
Experiment
18/62-300
TDR
ATLAS
18/62-300
Note
3.50E+02
waiting electric field, V/cm
Geometry
3.00E+02
Calculation
2.50E+02
Fit
2.00E+02
1.50E+02
1.00E+02
5.00E+01
0.00E+00
0
0.01
0.02
0.03
0.04
distance, cm
E*(x) = K1/d + K2(x/d)^a
Notes:
The E* is parameterized along the strip axes
where:
K1 = 0.25 [cm]
K2 = 244 [V]
a=9
d = 0.03 [cm]
SWG meeting, CERN, March 27,28-2013
The next steps forward
(software cross test)
•
Continue the cross tests of TCAD and other available software with the
distributed set of parameters
The new goal:
•
Charge collection modeling which combines:
E(x) + Q(t) + Induction = Q collected
where:
detector type - PAD
E(x) is known from the 1-st step of the project
Trapping time = f(F) linear approximation (as it defined in the next PPT)
The results of simulation:
- Current response for SRP- Ie(t), Ih(t)
- Charge evolution - Qe(t), Qh(t)
- the induced (collected) charge - Qe, Qh
SWG meeting, CERN, March 27,28-2013
Standard parameterization
•
•
•
•
•
•
•
The parameters listed below are chosen to have the more pronounced DP effect
and do not correspond to the correct description of the detector performance.
The set of parameters for cross-test of modeling software:
Detector thickness -------------------------------------------------------- d=0.03 cm
Concentration of shallow donors (phosphorus) ------------NSD = 6e11 cm-3
Bulk generated current calculated from
Single level model
Radiation induced deep levels
•
•
•
•
We will compare the results of simulation for the following set of parameters:
T = 290K and 260K
V= 200V, 300V, 500V, 1000V at F = 1e15cm-2
F= 1e13, 1e14, 3e14, 1e15, 3e15 cm-2 at V=300V
Type of defect
Deep donor
Deep acceptor
Activation energy, eV Trapping cross
section, cm2
EDD - EV = 0.48
eh = 1e-15
EDA - EV = 0.595
eh = 1e-15
Introduction rate, cm-1
GDD = 1
GDA = 1
Trapping parameters:
Tau(0) = 1e-3 [s]
βe = 3.2e-7 [s-1cm2]
βh = 3.5e-7 [s-1cm2]
SWG meeting, CERN, March 27,28-2013
The next steps forward
(model development and test)
•
•
•
Phenomena parameterization
Weighting potential approximation
Data base
The new goal:
•
Charge collection modeling with 2 MGLs:
I(T) + E(x) + Q(t) + Induction(PAD) = Q collected
where:
detector type - PAD
E(x) from updated parameters
Trapping time = f(F) linear approximation
The results of simulation:
- Current response for SRP- Ie(t), Ih(t)
- Charge evolution along the collection trajectory - Qe(t), Qh(t)
- Induced (collected) charge - Qe, Qh
SWG meeting, CERN, March 27,28-2013
Thank you for your attention
Topics for “Detectors modeling” working group in RD50 collaboration.
Bulk current generation
Collecting existing experimental data J(T), J(F)
- There should be a lot of TSC and I-DLTS data (I(T) above depletion) existing
- Any other existing data welcome to be contributed
Measurements of the current activation energy for different particles and fluences
- As far as possible temperature range.
- A range from -40C to +40C seems to be sufficient.
- Use diodes (no segmented detectors) with connected guard ring!
Microscopic modeling of bulk generation current
Trapping time fluence dependence
Collecting existing experimental data τ(F)
Measurement of trapping time
- Classic TCT
- Edge TCT
- ..other methods?
Microscopic model
High electric field effects
Experimental data on E(x) in irradiated detectors
Collecting E(x) “experimental data” in PAD detectors
E(x) measurements
E(x) in irradiated detectors modeling
Band Parameters Epsilon
:
11.8
Eg (eV)
: 1.12
Chi (eV) : 4.17
Nc (cm-3) : 2.66e+19
Nv (cm-3) : 9.88e+18
ni (cm-3) : 2.86e+09
Incomplete
Ionization
Parameters
Gc
:
Gv
:
Ed (eV)
:
Ea (eV) :
2
4
0.044
0.045
Recombination
Parameters
taun0
taup0
Thermal
Velocities
vsatn (cm/s) : 1.04e+07
vsatp (cm/s) : 1.04e+07
REGIONAL
MODEL FLAGS
SRH
bgn
: 1e-07
: 1e-07
T, consrh T , Auger T ,
T, impact T, Boltzmann T,