July 2014

•
– Chuck changed from 6 inch to 4 inch.
• Standard etch recipes tuned except for 15.0 um/min recipe needs to be tuned for profile.
– LF generator showing high forward power fault. Working on replacing the unit with a spare.
•
– Pump Maintenance done on all three systems on July 18, 2014.
•
– Sputter2 system down due WindowsXP activation (WindowsXP not supported) – working with Smart Systems to find a solution.
– Gold consumption on eBeam.

Equipment Utilization Chart- JULY 2014
600
500
400
300
200
100
0 pecvdoffice hrs pecvdnon office hrs
Total 180 540
Unavailable 0 180
Downtime
Not Used
4
86
0
349
Used 90 11
Drieoffice hrs
Drienon office hrs
180 540
0 180
27 99
123 258
30 3 rie floffice hrs rie flnon office hrs
180 540
0 180
0 0
122 359
58 1 rie cloffice hrs rie clnon office hrs
180 540
0 180
4 0
126 353
50 7
1office
1- non office hrs hrs
180 540
0 180
0 0
0 246
180 114
2office
2 - non office hrs hrs
180 540
0 180
148 320
11 20
21 20
E-beam evptroffice hrs evptrnonoffice hrs
180 540
0 180
12 36
12 308
156 16
RF-
Anelva Equip ngoffice hrs office hrs
180 540
0 180
0 0
8 336
172 24 l l atoratornon office hrs office hrs
180 540
0 180
0 0
32 352
148 8

200
180
160
140
120
100
PECVD
Equipment Utilization Chart- Comparison
DRIE RIE-Fl RIE-Cl
Sputter
Coater1
Sputter
Coater2
E-beam
Evaporator
Anelva
Sputter
Thermal
Evap.
80
60
40
20
0
Apr
Ma y
JunJuly Apr
Ma y
JunJuly Apr
Ma y
JunJuly Apr
Ma y
JunJuly Apr
Ma y
JunJuly Apr
Ma y
JunJuly Apr
Ma y
JunJuly Apr
Ma y
JunJuly Apr
Ma y
JunJuly
Total 18 18 18 18
Unavailable 0 0 0 0
18 18 18 18
0 0 0 0
18 18 18 18
0 0 0 0
18 18 18 18
0 0 0 0
18 18 18 18
0 0 0 0
18 18 18 18
0 0 0 0
18 18 18 18
0 0 0 0
18 18 18 18
0 0 0 0
18 18 18 18
0 0 0 0
3 3 83 27 0 7 6 0 3 8 0 4 0 0 0 0 24 18 40 14 0 32 0 12 0 0 0 0 0 8 0 0 Downtime 1 12 1 4
Not Used 89 73 99 86
Used 90 95 80 90
10 11 50 12
75 62 47 30
14 10 13 12
38 69 37 58
12 11 12 12
53 62 58 50
12 0 37 0
16 18 14 18
12 0 10 11
32 0 31 21
40 52 28 12
14 96 15 15
8 12 16 8
17 16 16 17
84 36 48 32
96 13 13 14

15
10
25
E-BEAM EVAPORATION Au USAGE CHART
20
5
0
Feb:
2013
Mar:
2013
Apr:
2013
Borrowed from RD (g)
Given to RD (g)
Used for depositions (g) 1,05 1,797 1,6
May:
2013
2,24
Jun:
2013
Jul:
2013
5,183
1,2 0,181
Aug:
2013
0
Sep:
2013
Oct:
2013
Nov:
2013
Dec:
2013
Jan:
2014
Feb:
2014
Mar:
2014
Apr:
2014
May:
2014
Jun:
2014
15,124 19,994
July:
2014
5,001
6,885 1,483 1,901 8,244 7,959 6,134 7,614 7,605 3,195 17,823 19,792

1
2
3
4
5
6
9
10
7
8
11
Sl No.
Date
2/7/2014
3/7/2014
4/7/2014
8/7/2014
11/7/2014
17/07/2014
21/07/2014
24/07/2014
25/07/2014
25/07/2014
30/07/2014
Au thickness deposited in nm.
Pooling of users in numbers.
70
45
100
100
70
70
70
70
70
70
100
2
2
2
2
5
2
2
5
2
6
2
Total number of gold deposition done in July: 21
Total number of slots had multiple users: 11
Total number of slots had single users: 10
We were not been able to club multiple users on 10 slots because of the thickness and combination of different materials.

Power ramp up hold time and power modified in order to reduce the gold usage
BEFORE
R2=5min
S2=5min
9% of 7KV
R1=5min
S1=5min
5% of 7KV.
R1=5min
PRESENT
S2=1min
R2=5min
8% of 7KV
S1=1min
4% of 7KV.
0% of 7KV.
0% of 7KV.
At power percentage 9% the rate of deposition will be almost 1 A/s.
During Soak2 (300 seconds) almost 30 nm of gold will be evaporated and it gets deposited on the shutter.
By reducing the Soak2 duration from 300 seconds to 60 seconds we are saving gold that goes on the shutter.
( Roughly 24 nm gold savings per deposition ~ 8g of gold for 20 deposition runs).

•
Silicon Carbide film optimization
• Comparison Study of Oxford SiC recipe and SiC w/ H
2
• FTIR and XPS was done to characterize the films.
dilution.
0.06
0.04
0.02
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
-0.14
4000 3500 3000 2500 2000
Wavenumber (cm)
-1
1500 1000 500
SiC:H
SiC oxford
Deposited
Material
Deposition Rate
(nm/min)
SiC (Oxford) 28.7
SiC with H2 6.1
SiC
(Oxford)
SiC with
H2
Element Atomic %
Si
C
Si
C
51.63
25.44
44.33
45.51

• Further exploration of process space with 2-level 3-variable DOE
• Dep. Rate and FTIR peak area for SiC/SiH/Si-CHn compared for film quality.
FR/Pow/Press
Trial no.
Conditions
1 LLL
2
3
HLL
LHL
4
5
6
7
8
LLH
LHH
HHL
HLH
HHH
H2 Flow Rate
(sccm)
130
70
130
130
130
70
70
70
Power (W)
20
20
30
20
30
30
20
30
Pressure
(mTorr)
500
500
500
1000
1000
500
1000
1000
Dep. Rate
(nm/min)
6
6.04
8.42
6.64
8.9
8
7.39
9.86
• FTIR spectra recorded for each of the 8 samples and normalized area under Si-C, Si-H and
Si-CH n was calculated. SiC “quality” based on maximizing Si-C peak area.
Si-H
0.00221763
0.00207506
0.00140143
0.00241968
0.0020509
0.00178333
0.00209386
0.00210811
Normalized FTIR Peak area
Si-CHn
0.000138
0.000155
7.13E-05
0.000191
0.000157
9.17E-05
0.000235
0.000176
Si-C
0.0201928
0.0172296
0.0150435
0.0137651
0.0171856
0.0274667
0.0247744
0.0254122

• Power and H2 Flow rate are the main parameters for SiC deposition (in SiH4-starvation regime with H2 dilution).
• Three runs done varying the power, H
2 below: flow rate and pressure as shown in the table
Run no.
1
Power (W)
40
H
2
(sccm)
150
Pressure (mTorr)
2 20 70
3 30 150
• Deposition rate, Refractive Index and Residual stress were measured.
1000
1000
500
Run no.
Deposition
Rate
(nm/min)
Residual stress (GPa)
Si/C ratio
1
2
10.8
7.8
0.66 (Compressive)
0.305 (Compressive)
0.86
1.04
3 8.5
0.876 (Compressive)
• Run 1 with increased SiH
4 flow rate from 5sccm- 10sccm
Run no.
Deposition
Rate (nm/min)
Si/C ratio n k
4 14.5
1.18
2.612
0.011
0.77
n
2.27
2.26
2.08
k
0.013
0.011
0.025

E-BEAM EVAPORATION Au USAGE CHART
1400
1200
1000
800
600
400
200
0
THICKNESS
(nm)
Apr:
2013
100
May:
2013
140
Jun:
2013
60
July:
2013
7
Aug:
2013
0
Sep:
2013
405
Oct:
2013
160
Nov:
2013
270
Dec:
2013
360
Jan:
2014
345
Feb:
2014
320
Mar:
2014
470
Apr:
2014
490
May:
2014
190
Jun:
2014
945
July:
2014
1335
TOTAL THICKNESS DEPOSITED TILL DATE: 5597 nm

Gold usage as per individual users:
26
27
28
29
30
21
22
23
24
25
17
18
19
20
12
13
14
15
16
8
9
10
11
Sl no.
1
2
5
6
3
4
7
NAME
Rohith Soman
Marsha Parmar
Aditya Roy Choudhury
Tanushree H Choudhury
Nagarjun KP
Suman Sarkar
Manohar Lal
Adil Meersha
Yasasvi GPR
Chandan
Parameshwar
Ganapathi
Shishir Kumar
Ankur Goswami
Kazi Rafsanjani Amin
Dhanya Varghese
Shradha Takur
Sowmya M S
Saloni Chaurasia
Abheek
Manavendra
Vijaya Lakshmi
Kranthi
Abhishek
Chandrashekar S Kambar
Vamsi
Venkatesh Bharadwaja AD
Shiva
Sangeeth
Deepak Ranjan Nayak
TOTAL
50
50
47
15
5
70
65
60
60
50
115
100
80
70
THICKNESS (nm)
1720
1080
670
660
510
485
475
350
250
250
240
210
200
180
170
120
8407
Total thickness deposited as
per slots booked : 5597 nm
Total thickness deposited
for individual users : 8407 nm
The difference is : 2810 nm
Average gold required to
deposit 100 nm is : 1.6 g.
Saved around 45 g of gold, by pooling the users.
Remaining gold : 28.243 g