Read Disturb Errors
in MLC NAND Flash Memory:
Characterization, Mitigation, and Recovery
Yu Cai, Yixin Luo, Saugata Ghose,
Erich F. Haratsch*, Ken Mai, Onur Mutlu
Carnegie Mellon University, *Seagate Technology
Executive Summary
• Read disturb errors limit flash memory lifetime today
– Apply a high pass-through voltage (Vpass) to multiple pages on a read
• We characterize read disturb on real NAND flash chips
– Slightly lowering Vpass greatly reduces read disturb errors
– Some flash cells are more prone to read disturb
• Technique 1: Mitigate read disturb errors online
– Vpass Tuning dynamically finds and applies a lowered Vpass
– Flash memory lifetime improves by 21%
• Technique 2: Recover after failure to prevent data loss
– Read Disturb Oriented Error Recovery (RDR) selectively
corrects cells more susceptible to read disturb errors
– Reduces raw bit error rate (RBER) by up to 36%
2
Outline
•Background (Problem and Goal)
•Key Experimental Observations
•Mitigation: Vpass Tuning
•Recovery: Read Disturb Oriented Error Recovery
•Conclusion
3
Outline
•Background (Problem and Goal)
•Key Experimental Observations
•Mitigation: Vpass Tuning
•Recovery: Read Disturb Oriented Error Recovery
•Conclusion
4
NAND Flash Memory Background
Flash Memory
Page M
Page 1
Page
257
Pass
Page M+1
Page 2
Page
258
Pass
Page M+2
Block 0
Block 1
……
Block N
…
……
Page 255
……
Page
256
Read
……
Page 0
Page
511
Pass
Page M+255
Flash
Controller
5
Flash Cell Array
Row
Block X
Column
Page Y
Sense Amplifiers
Sense Amplifiers
6
Flash Cell
Floating
Gate
Drain
Gate
Vth =
2.5 V
Source
Floating Gate Transistor
(Flash Cell)
7
Flash Read
Vread = 2.5 V
Vth =
2V
Vread = 2.5 V
Vth =
3V
Gate
1
0
8
Flash Pass-Through
Vpass = 5 V
Vth =
2V
Vpass = 5 V
Vth =
3V
Gate
1
1
9
Read from Flash Cell Array
Vpass = 5.0 V
Vread = 2.5 V
Vpass = 5.0 V
Vpass = 5.0 V
Correct values
for page 2:
3.0V
3.8V (5V) 3.9V
Pass
4.8V
Page 1
3.5V
2.9V(2.5V)2.4V
Read
2.1V
Page 2
2.2V
4.3V (5V) 4.6V
Pass
1.8V
Page 3
3.5V
2.3V (5V) 1.9V
Pass
4.3V
Page 4
0
0
1
1
10
Read Disturb Problem: “Weak Programming” Effect
3.0V
3.8V (5V) 3.9V
Pass
4.8V
Page 1
3.5V
2.9V (5V) 2.4V
Pass
2.1V
Page 2
2.2V
4.3V(2.5V)4.6V
Read
1.8V
Page 3
3.5V
2.3V (5V) 1.9V
Pass
4.3V
Page 4
Repeatedly read page 3 (or any page other than page 2)
11
Read Disturb Problem: “Weak Programming” Effect
Vpass = 5.0 V
Vread = 2.5 V
Vpass = 5.0 V
Vpass = 5.0 V
3.0V
3.8V
3.9V
4.8V
Page 1
3.5V
2.9V
2.6V
2.4V
2.1V
Page 2
2.2V
4.3V
4.6V
1.8V
Page 3
3.5V
2.3V
1.9V
4.3V
Page 4
Incorrect values
0
0
0
1
from page 2:
High pass-through voltage induces “weak-programming” effect 12
Read disturb errors: Reading from one page can alter the
values stored in other unread pages
Goal: Mitigate and Recover
Read Disturb Errors
13
Outline
•Background (Problem and Goal)
•Key Experimental Observations
•Mitigation: Vpass Tuning
•Recovery: Read Disturb Oriented Error Recovery
•Conclusion
14
Methodology
• FPGA-based flash memory testing platform [Cai+, FCCM ‘11]
• Real 20- to 24-nm MLC NAND flash chips
• 0 to 1M read disturbs
• 0 to 15K Program/Erase Cycles (PEC)
15
Read Disturb Effect on Vth Distribution
6
5
PDF
4
3
× 10-3
0 (No Read Disturbs)
0.25M Read Disturbs
0.5M Read Disturbs
1M Read Disturbs
2
1
0
0
ER state
50
100
Vth gradually
increases with
read disturb
counts
P1
state
P2
state
150
200
250
300
350
Normalized Threshold Voltage
P3
state
400
450
500
16
Other Experimental Observations
•Lower threshold voltage states are affected more
by read disturb
•Wear-out increases read disturb effect
17
Key
Observation
Slightly lowering
Vpass
Reducing
The1:Pass-Through
Voltage
greatly reduces read disturb errors
Normalized Tolerable
Read Disturb Count
1400
1300
1200
1000
800
600
470
400
200
0
1
1.7
0%
1%
6.8
22
100
2%
3%
4%
5%
Percentage of Vpass Reduction
6%
18
Outline
•Background (Problem and Goal)
•Key Experimental Observations
•Mitigation: Vpass Tuning
•Recovery: Read Disturb Oriented Error Recovery
•Conclusion
19
Read Disturb Mitigation: Vpass Tuning
•Key Idea: Dynamically find and apply a lowered
Vpass
•Trade-off for lowering Vpass
+Allows more read disturbs
–Induces more read errors
20
Read Errors Induced by Vpass Reduction
Reducing Vpass to 4.9V
Vpass = 4.9 V
Vread = 2.5 V
Vpass = 4.9 V
Vpass = 4.9 V
3.0V
3.8V
3.9V
4.8V
Page 1
3.5V
2.9V
2.4V
2.1V
Page 2
2.2V
4.3V
4.6V
1.8V
Page 3
3.5V
2.3V
1.9V
4.3V
Page 4
0
0
1
1
21
Read Errors Induced by Vpass Reduction
Reducing Vpass to 4.7V
Vpass = 4.7 V
Vread = 2.5 V
Vpass = 4.7 V
Vpass = 4.7 V
Incorrect values
from page 2:
3.0V
3.8V
3.9V
4.8V
Page 1
3.5V
2.9V
2.4V
2.1V
Page 2
2.2V
4.3V
4.6V
1.8V
Page 3
3.5V
2.3V
1.9V
4.3V
Page 4
0
0
1
0
22
Utilizing the Unused ECC Capability
1.0
RBER
0.8
ECC Correction Capability
× 10-3
Unused ECC capability
0.6
0.4
0.2
0
01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21
N-day Retention
1. Huge unused ECC correction capability can be used
to tolerate read errors
2. Unused ECC capability decreases over time
Dynamically adjust Vpass so that read errors fully utilize
the unused ECC capability
23
Vpass Reduction Trade-Off Summary
•Conservatively set Vpass to a high voltage
–Accumulates more read disturb errors at the end of
each refresh interval
+No read errors
•Dynamically adjust Vpass to unused ECC capability
+ Minimize read disturb errors
oControl read errors to be tolerable by ECC
oIf read errors exceed ECC capability, read again with a
higher Vpass to correct read errors
24
Vpass Tuning Steps
•Perform once for each block every day:
1. Estimate unused ECC capability
2. Aggressively reduce Vpass until read errors exceeds ECC
capability
3. Gradually increase Vpass until read error just becomes
less than ECC capability
25
Evaluation of Vpass Tuning
•19 real workload I/O traces
•Assume 7-day refresh period
•Similar methodology as before to determine
acceptable Vpass reduction
•Overhead for a 512 GB flash drive:
–128 KB storage overhead for per-block Vpass setting and
worst-case page
–24.34 sec/day average Vpass Tuning overhead
26
12000
10000
8000
6000
4000
2000
0
Baseline
VVpass
Tuning
pass Tuning
homes
web-vm
mail
mds
rsrch
prn
web
stg
ts
proj
src
wdev
usr
postmark
hm
cello99
webSearch
financial
prxy
P/E Cycle Lifetime
Vpass Tuning Lifetime Improvements
Average lifetime improvement: 21.0%
27
Outline
•Background (Problem and Goal)
•Key Experimental Observations
•Mitigation: Vpass Tuning
•Recovery: Read Disturb Oriented Error Recovery
•Conclusion
28
Read Disturb Resistance
PDF
Disturb-Resistant R
Disturb-Prone
P
N read
disturbs
N read disturbs
Normalized Vth
29
PDF
Observation 2: Some Flash Cells Are
More Prone to Read Disturb
After 250K read disturb:
Disturb-prone cells have higher threshold voltages
Disturb-resistant cells
ER have lower threshold voltages
P1
R
R
P
P
R
Disturb-prone
P ER state
R
Disturb-resistant
PP1 state
Normalized Vth
30
Read Disturb Oriented Error Recovery (RDR)
•Triggered by an uncorrectable flash error
–Back up all valid data in the faulty block
–Disturb the faulty page 100K times (more)
–Compare Vth’s before and after read disturb
–Select cells susceptible to flash errors (Vref−σ<Vth<Vref−σ)
–Predict among these susceptible cells
• Cells with more Vth shifts are disturb-prone  Higher Vth state
• Cells with less Vth shifts are disturb-resistant  Lower Vth state
31
RBER
RDR Evaluation
12
10
8
6
4
2
0
× 10-3
RDR
No Recovery
0
0.2M
0.4M
0.6M
0.8M
1M
Read Disturb Count
Reduce total error counts up to 36% @ 1M read disturbs
ECC can be used to correct the remaining errors
32
Outline
•Background (Problem and Goal)
•Key Experimental Observations
•Mitigation: Vpass Tuning
•Recovery: Read Disturb Oriented Error Recovery
•Conclusion
33
Executive Summary
• Read disturb errors limit flash memory lifetime today
– Apply a high pass-through voltage (Vpass) to multiple pages on a read
• We characterize read disturb on real NAND flash chips
– Slightly lowering Vpass greatly reduces read disturb errors
– Some flash cells are more prone to read disturb
• Technique 1: Mitigate read disturb errors online
– Vpass Tuning dynamically finds and applies a lowered Vpass
– Flash memory lifetime improves by 21%
• Technique 2: Recover after failure to prevent data loss
– Read Disturb Oriented Error Recovery (RDR) selectively
corrects cells more susceptible to read disturb errors
– Reduces raw bit error rate (RBER) by up to 36%
34
Read Disturb Errors
in MLC NAND Flash Memory:
Characterization, Mitigation, and Recovery
Yu Cai, Yixin Luo, Saugata Ghose,
Erich F. Haratsch*, Ken Mai, Onur Mutlu
Carnegie Mellon University, *Seagate Technology
0
20K
40K 60K 80K 100K
Read Disturb Count
PEC
15K
10K
8K
5K
4K
3K
2K
Slope
1.90×10-8
9.10×10-9
7.50×10-9
3.74×10-9
2.37×10-9
1.63×10-9
1.00×10-9
Faster
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
× 10-3
Slower
Raw Bit Error Rate (RBER)
Read Disturb Induced RBER Increases Faster
with Higher PEC
36
190
189
188
187
186
185
184
183
0 0.25 0.5 0.75 1
Read Disturb Count (Millions)
Norm. Vth Standard Deviation
Norm. Vth Mean
Threshold Voltage Increases
with Read Disturb Count
27
25
23
21
19
17
15
0 0.25 0.5 0.75 1
Read Disturb Count (Millions)
Showing results for P1 state @ 8K PEC, other states have similar trends
37
Lower Voltage States Are
More Prone to Read Disturb
50
45
40
35
30
25
0 0.25 0.5 0.75 1
Read Disturb Count (Millions)
200
Norm. Vth Mean
Norm. Vth Mean
55
ER State
P1 State
195
190
185
180
175
170
0 0.25 0.5 0.75 1
Read Disturb Count (Millions)
38
Reducing Vpass Increases Tolerable Read Disturb
Count
1.6
× 10-3
1.4
100% 99%
98%
97%
96%
95%
94%
RBER
1.2
100% Vpass
99% Vpass
98% Vpass
97% Vpass
96% Vpass
95% Vpass
94% Vpass
1.0
0.8
0.6
0.4
104
105
Pct. Vpass Value
Rd. Disturb. Cnt.
106
107
Read Disturb Count
108
109
100%
99%
98%
97%
96%
95%
94%
1x
1.7x
6.8x
22x
100x
470x
1300x
39
Addl. RBER Due to Reduced Vpass
Pass-Through Voltage Reduction Induced Read Error
1.0
× 10-3
0-day
1-day
2-day
6-day
9-day
17-day
21-day
0.75
0.5
0.25
0
480
485
490
495
Relaxed Vpass
500
505
510
40
Read Errors Induced by Vpass Reduction
•Will generate a read error only if:
–Max(Vth) > Vpass
–Correct read value is 1
•These errors do not affect lifetime
–can usually be tolerated by the unused ECC capability
•These errors are temporary
–can be corrected (if necessary) by reading with the
default Vpass
41
Illustration of Vpass Tuning Results
42
Some Flash Cells Are
More Prone to Read Disturb
Predict to be P1 state Predict to be ER state
- Area I is correct
- Area III is correct
- Area II is 50/50
- Area IV is 50/50
Showing ∆Vth with 8K PEC from 250K to 350K read disturbs
43