3). Dielectric phenomena • Microscopic picture – change in charge density when field is applied r(r) Electronic charge density No E field E E field on Dr(r) Change in electronic charge density r - + Note dipolar character Dipole Moments of Atoms • Total electronic charge per atom Z = atomic number Ze • Total nuclear charge per atom Ze r el all space r (r )dr nuc all space (r )dr • Centre of mass of electric or nuclear charge distribution r • Dipole moment Zea Ze a Ze r nuc r el r el/nuc r el/nuc all space (r ) r dr r el/nuc all space nuc (r ) r el (r ) r dr all space r el all space (r ) r dr if r nuc 0 (r )dr Electrostatic potential of point dipole • +/- charges, equal magnitude, q, separation a 2 • axially symmetric potential (z axis) a r2 r 2 a r cos 2 z q+ a/2 2 a a 2 r 1 cos 2r r r+ r r- x 1 a a 2 1 r 1 cos 2r r r 1 a 2 cos r 2r qa cos p cos r 2 4o r 4o r 2 2 p a/2 q- q 1 1 (r ) 4o r r- Equipotential lines: dipole • Contours on which electric potential is constant p cos r 4o r 2 • Equipotential lines perp. to field lines Field lines: point dipole • Generated from E – grad r k Cart. , , x y z j i Sph.Pol. (r ) i, j, k 1 1 ˆ ˆ ˆ (r, , ) , , r r r sin cos 4o r 2 p p 2cos sin (r, ) , 3 , 0 3 4o r r ← NB not a point dipole Insulators vs metals • Insulator – Localised wave functions • Metal – Delocalised wave functions No E field E field on Polarisation • Polarisation P = dipole moment p per unit volume Cm/m3 = Cm-2 p E • Mesoscopic averaging: P is a constant vector field for a uniformly polarised medium P E • Macroscopic charges sp in a uniformly polarised medium sp = ___? dS - E P + E Depolarising electric field • Depolarising electric field EDep in uniformly polarised ∞ slab - EDep = sP/2o +sP/2o EDep = -P/o EDep + • Macroscopic electric field EMac= E + EDep EMac = E - P/o E - EMac + E Relative Permittivity and Susceptibility • EMac = E – P/ o = (splates – P)/ o in magnitude • o E = o EMac + P P = o cE EMac • o E = o EMac + o cE EMac = o (1 + cE)EMac = oEMac – EMac = E / – E = EMac • Dielectric constant (relative permittivity) = 1 + cE – Typical values: silicon 11.8, diamond 5.6, vacuum 1 • Dielectric susceptibilty cE Polar dielectrics • • • molecules possess permanent dipole moment in the absence of electric field, dipoles randomly oriented by thermal motion hence, no polarisation. + _ + _ e.g. HCl and H2O …..but not CS2 no net dipole moment + _ + _ E zero field, random net P=0 preferential alignment but P Np Effect of orientation on net field + Eappl _ Edip + Eappl _ • Effect of alignment is to reduce the net field • Tendency to align is opposed by thermal effects • Balance is determined by Boltzmann statistics • Key factor is ratio of the potential energy of the dipole (U) to the temperature (T), which enters as exp(-U/kT) Potential energy of dipole in E field • Potential energy U (U c.f. W from before) when charge density of molecule (r) is in slowly spatially varying external potential (No factor of ½ c.f. W) ρ(r ) (r )dr U + all space (r ) (0) r. (0) ... U ρ(r ) (0) r. (0) ... dr all space ρ(r )dr q r ρ(r )dr E.p all space U q (0) p.E ... _ If q = 0, leading term is –p.E = -pEcos all space (0). E Number Distribution function • • • Angular distribution function: N() (no E field), N’() (E field) Number of dipoles oriented between and +d : N()d Total number of dipoles N E||z d d sin d d N( )d 2 sin d no E field N 4 N( )d N sin d /2 N' ( )d 2 A sin d e U/kT e U/kT 1 U/kT if U kT E field on N' ( )d 2 A sin 1 U/kT d 2 A sin 1 pE cos/kT d Number Distribution function • Total number of dipoles N π N N' ( )d 0 2 A pE sin cos d N' ( )d 2 A sin d kT π N' ( )d 4 A 0 A N / 4 Susceptibility of polar dielectric • Molecules acquire induced dipole moment through: - reorientation - polarisation of molecular charge (polar or nonpolar molecules) π Pz reorientat ion N' p cos d 0 N pEcos 2 sin 1 p cos d 4 0 kT π Pz polarisation N p 2E Np 2 P E 3kT 3kT o N E p2 P c E o E c E N 3 okT cE Np 2 slope p 3 ok intercept N 1/T The Langevin Equation When U/kT is not small, integration of N()d yields: P pE kT P Np coth kT pE Plotting P vs pE/kT shows two distinct regimes: Np (1) High E, low T: all dipoles aligned: pE/kT P Np (2) Low E, high T: small U/kT approximation: Np2 P E 3kT Clausius-Mossotti equation • Relationship between r and polarisability density Nincluding local fields • Neglected local field for polar dielectrics (dilute gases) • Each molecule, atom, etc. located in spherical cavity • C-M local field is external field + field due to polarisation charges on cavity surface Eloc = E + Epol • rpol = P.dS dS P d dS cos- - cos R + + + - + P, E P.dS= - P dS cos ring area element = 2Rsin Rd Clausius-Mossotti equation • Charge on ring area element - P dS cos-o cE E 2Rsin Rd cos • Contribution to field at centre of cavity from rpol on ring o cE E 2Rsin Rd cos/4o R2) = cE E sin cosd /2 • Field || P due to all charge on cavity surface Epol= cE E/3 • Local field Eloc = E + Epol= (1+ cE/3)E • P = o N Eloc = o N (1+ cE/3)E (in cavity) • P = o cE E (in bulk) • N (1+ cE/3) = cE • N = cE / (1+ cE/3) N/3 = (r – 1)/(r + 2) since r = 1 + cE Non-uniform polarisation • Uniform polarisation surface charges only P E P - + • Non-uniform L polarisation bulk charges also + - + - Displacements of positive charges Accumulated charges Non-uniform polarisation • Box with origin of local axes at (x,y,z), volume DxDyDz • Charge crossing area dS = P.dS ẑ • Charge entering LH yz face ŷ Px ΔyΔz • Charge exiting RH yz face Px Px x̂ (x,y,z) (x+Dx,y,z) r .j t P jpol t Px Δx x Px P Δx x ΔyΔz x • Net charge entering box Px ΔxΔyΔz x • Total charge including zx and xy pairs of faces Px Py Pz ΔxΔyΔz .P volume y z x ρpol bulk .P Electric displacement D • What happens when a charge is added to a neutral dielectric ? Added (free) charge Polarisation (bound) charge response of dielectric to added charge • Two types of charge: • Those due to polarisation (bound charges) ρb ρpol bulk ρpol surf ace • Those due to extra charges (free charges) ρf (charge injection by electrode, etc) ρt ρf ρb • Total charge Electric displacement D • Gauss’s Law .E ρ t 1 ρ f ρb 1 ρf .P o o o ρf o.E .P . oE P .D D oE P oE cE oE o 1 cE E o rE • Displacement: a vector whose div equals free charge density • Units: C·m-2 (same as P) • D relates E and P • D = oE + P is a constitutive relation • Can solve for D field and implicitly include E and P fields Validity of expressions • • Gauss’ Law for E, P and D relation D = oE + P Limited validity: Expressions involving r and cE Always valid: • Have assumed that cE is a simple number: P = o cE E only true in LIH media: • Linear: cE independent of magnitude of E interesting media “non-linear”: P = cE oE + c2E oEE + …. • Isotropic: cE independent of direction of E interesting media “anisotropic”: cE is a tensor (generates vector) • Homogeneous: uniform medium (spatially varying r) Boundary conditions on D and E • Simplest example – charged capacitor with dielectric + - E Emac=E/r - D = oE E + D = oE + P D = oE = orEmac • D is continuous ┴ boundaries (no free charges there) • E is discontinuous ┴ boundaries Boundary conditions on D • We know that .D r f .D dv D.dS r v • • S f dv v Absence of free charges at boundary D.dS 0 S D1 cos1 S – D2 cos2 S = 0 1 D1 cos1 = D2 cos2 2 D1┴ = D2 ┴ Perpendicular component of D is continuous 1 (E1,D1) 2 Presence of free charges at boundary D.d S r f dv S v D1 cos1 S – D2 cos2 S = S sf D1┴ = D2 ┴ + sf Discontinuity in perpendicular component of D is free charge areal density (E2,D2) S Boundary Conditions on E • We know that for an electrostatic E field E.d 0 C • E and D are constant along the horizontal sides of C in regions 1 or 2 1 B dℓ1 (E1,D1) E .d E sin 1 1 1 1 1 1B A A A E2 .d 2 E2 sin 2 2 B 2 C 2 (E2,D2) dℓ2 • Sides of C thin enough to make no contribution E.d E sin C 1 1 1 E2sin 2 2 0 E1sin1 E2sin 2 E1|| E2|| • Parallel component of E is continuous across boundary Interface between 2 LIH media LIH D = roE E and D bend at interface 1 σ f 0 D1 D2 D1cos1 D2cos 2 1 r1 oE1cos1 r2 oE2cos 2 2 E||1 E||2 E1sin1 E 2sin 2 E1sin1 E 2sin 2 tan 1 tan 2 r1 oE1cos1 r2 oE 2cos 2 r1 r2 tan 1 r1 tan 2 r2 2 Energy of free charges in dielectric o 1 (r )r (r )dv • In vacuum W 2 all space 2 dv 2 all space o 2 2 E dv all space • Assembling free charges in a dielectric 1 1 W (r )r f (r )dv (r ).D(r )dv V vol containing all r f 2V 2V .D D. .D 1 W .D D. dv 2V .D .D D. 1 1 D.dS - D. dv 2S 2V o r 1 W D.E dv 2 all space 2 2 E dv all space Method of Images Derives from Uniqueness Theorem: “only one potential Satisfies Poisson’s Equation and given boundary conditions” Image charges reproduce BC or specified r .E E o r 2 . Poisson' s Equation o 2 0 ( r 0 within boundaries ) Laplace' s Equation Can replace parts of system with simpler “image” charge arrangements, as long as same boundary conditions satisfied Method exploits: (1) Symmetry (2) Gauss’s Law Basic Image Charge Example Consider a point charge near an infinite, grounded, conducting plate: induced -ve charge on plate; potential zero at plate surface Complex field pattern, combining radial (point charge +Q) and planar (conducting plate) symmetries, can also be viewed as half of pattern of 2 point charges (+Q and -Q) of equal magnitude and opposite sign! +Q +Q -Q Basic Image Charge continued Arrangement is equivalent because it keeps the same boundary condition (potential zero on plate and zero potential on the median line). Point charge -Q is located same distance behind, like an image in a plane mirror. The resulting field is easy to calculate (vector sum of fields of 2 point charges of equal and opposite sign) Field lines must be normal to surface of conductor Also easy to calculate the induced -ve charge on plate! Distribution of induced charge s Induced charge is related to E ind the outward E field at the surface: o E+ Find E using image charge E E Q Q E 4or 2 2QD E2 cos 2 4or 4or 3 s ind o E +Q r E- D 2QD s ind oE (-ve and varying with r) 3 4r s ind negative since field lines point inwards -Q ds Total induced charge r Introduce parameter s s r 2 D2 s D sind has azimuthal symmetry: consider elemental annulus, radius s, thickness ds Qind s 0 ind 2s ds 0 2QD 4 s D 2 2 3 2 2s ds QD 2 0 d s2 D2 1 Q QD 3 1 2 2 2 2 2 2 s D s D 0 s Total induced charge: implications 2 conclusions from the result: Qind Q (1) Induced charge equals the negative of original point charge trivially true in this case only! (2) Induced charge equals the image charge - generally true! Consider Gauss’s Law, concept of enclosed charge E.dS S Qenc o Must not try to determine E in the region of image charge! In this case (behind infinite conductor) it is zero, which is not the answer the image charge would yield Point charge near grounded conducting sphere +Q - - a - D By comparison with previous example: (1) Distance D to centre of symmetry, radius a (2) Image (charge) location (3) -ve induced charge predominantly on side facing +Q (4) Boundary condition, zero potential on sphere surface Expect image charge will be a point charge on centre line, left of centre of sphere, magnitude not equal to Q, call it Q Point charge near grounded conducting sphere Q P2 Q P1 b D Q distance b from centre, =0 at symmetry points P1 and P2 1 Q Q 0 at P1 4o D a a b 1 Q Q 0 at P2 4o D a a b 2 a solving b D and Q' a D Qind Q' by Gauss Point charge near floating conducting sphere Q Q Q V On its own, floating the sphere at V relative to ground results in uniform +ve charge density over the surface. In the presence of Q, induced -ve charge predominantly on left; this complex system easily solved by 2 image charges: 2 a a Q Q at b and Q 4oaV at centre D D Qind Q Q by Gauss Point charge near isolated conducting sphere Q Q Q With no connection to ground, the sphere is at an unknown non-zero potential ; easily solved by same 2 image charges: the potential is still determined by Q but in this case, the sphere is overall neutral: Q+Q=0 Q Q a Q D 4oa 4oa 4oa Qind Q Q 0 by Gauss (same potential as if sphere was absent!) Q 4oD Point charge near LIH dielectric block • • • Q polarises dielectric and produces bound surface charge sb,ind sb,ind = P.n = o(r-1)Eni Eni normal component of E inside Q sb,ind negative if Q positive =1 D r Eno s sb,ind Eni = r s b,ind r 1 Q D 1 2 2 3/2 2 o 1 4 r o s D • Eno 4 2 2 o s D s b,ind r 1 Q D 1 2 2 3/2 2 o 1 4 r o s D • Eni Q D 4o s2 D2 Q D 3/2 3/2 Point charge near LIH dielectric block • Image charge for Eno E+ Er +Q • Image charge for Eni r 1 Q D Eno 1 2 2 1 r 4o s D 3/2 E rr 11 Q 2 r Q D r 1 4o s2 D2 E+ Er 2rr1 Q r r 3/2 Point charge near LIH dielectric block (see Lorrain,Corson & Lorrain pp 212-217) Outside: remove dielectric block and locate image charge Q a distance D behind 1 Q r Q r 1 Inside: remove dielectric block and replace original point charge Q by Q 2 Q Q r 1 Point charge near LIH dielectric block contrasting E field patterns conductor dielectric note dielectric distorted outside but radial inside