Radiation Effects on Emerging Electronic Materials and Devices Ron Schrimpf Vanderbilt University Institute for Space and Defense Electronics Team Members • Vanderbilt University – Electrical Engineering: Dan Fleetwood, Marcus Mendenhall, Lloyd Massengill, Robert Reed, Ron Schrimpf, Bob Weller – Physics: Len Feldman, Sok Pantelides • Arizona State University – Electrical Engineering: Hugh Barnaby • University of Florida – Electrical and Computer Engineering: Mark Law, Scott Thompson • Georgia Tech – Electrical and Computer Engineering: John Cressler • North Carolina State University – Physics: Gerry Lucovsky • Rutgers University – Chemistry: Eric Garfunkel, Evgeni Gusev Institute for Space and Defense Electronics Resource to support national requirements in radiation effects analysis and rad-hard design Bring academic resources/expertise and real-world engineering to bear on system-driven needs ISDE provides: • Government and industry radiation-effects resource – Modeling and simulation – Design support: rad models, hardening by design – Technology support: assessment, characterization • Flexible staffing driven by project needs – Faculty – Graduate students – Professional, non-tenured engineering staff Radiation Effects on Emerging Electronic Materials and Devices • More changes in IC technology and materials in past five years than previous forty years – SiGe, SOI, strained Si, alternative dielectrics, new metallization systems, ultra-small devices… • Future space and defense systems require understanding radiation effects in advanced technologies – Changes in device geometry and materials affect energy deposition, charge collection, circuit upset, parametric degradation… Approach • Experimental analysis of radiation response of devices and materials fabricated in university labs and by industrial partners • First-principles quantum mechanical analysis of radiation-induced defects physically based engineering models • Development and application of a fundamentally new multi-scale simulation approach • Validation of simulation through experiments Virtual Irradiation • Fundamentally new approach for simulating radiation effects • Applicable to all tasks QuickTime™ and a TIFF (LZW) decompressor are needed to see this picture. Physically Based Simulation of Radiation Events • High energy protons incident on advanced CMOS integrated circuit • Interaction with metallization layers dramatically increases energy deposition Device Description Radiation Events Hierarchical Multi-Scale Analysis of Radiation Effects Materials Device Structure IC Design Energy Deposition Defect Models Device Simulation Circuit Response Current Joint Program of ISDE/VU and CFDRC “Improved Understanding of Space Radiation Effects in Exploration Electronics by Advanced Modeling of Nanoscale Devices and Novel Materials” STTR Phase I Project, sponsored by NASA Ames (2005): Program Objectives: Couple Vanderbilt Geant4 and CFDRC NanoTCAD 3D Device Solver Adaptive/dynamic 3D meshing for multiple ion tracks Statistically meaningful runs on a massively parallel computing cluster 3D device simulation Integrated and automated interface of Geant4 and CFDRC NanoTCAD Geant4 - accurate model of radiation event - Adaptive 3D meshing - Physics based transient response - 3D Nanoscale transport ion str ike He ion, LET=1. 18, R=0. 02um He ion, P- sub Contact 1.E-03 e- p Blue = + ions 8.E-04 Drain Current (A) C ion, LET=5.06, R=0.06um C ion, P-sub C ontact 0.13um NMOS, Vd = 1.2 V, Vg = 0V Two different ion strikes Psub Contact / No-Contact 6.E-04 4.E-04 n 2.E-04 Time (s) 0.E+00 1.E-12 1.E-11 1.E-10 1.E-09 1.E-08 1.E-07 1.E-06 Research Plan • Tasks defined and scheduled Organization by Task • Radiation response of new materials – NCSU, Rutgers, Vanderbilt • Impact of new device technologies on radiation response – ASU, Florida, Georgia Tech, Vanderbilt • Single-event effects in new technologies and ultrasmall devices – Florida, Georgia Tech, Vanderbilt • Displacement-damage and total-dose effects in ultrasmall devices – ASU, Vanderbilt Radiation Response of New Materials • • • • • HfO2-based dielectrics and emerging high-k materials Metal gates Interface engineering (thickness & composition) Hydrogen and nitrogen at SiON interfaces (NBTI) Substrate engineering (strained Si, Si orientations, Si/SiGe, SOI) • Defects in nanoscale devices • Energy deposition via Radsafe/MRED Impact of new device technologies on radiation response • • • • • • • SiGe HBTs Strained Si CMOS Ultra-small bulk CMOS Mobility in ultra-thin film SOI MOSFETs TID response in scaled SOI CMOS Multiple gate/FinFET devices Multi-scale hierarchical analysis of single-event effects Single-event effects in new technologies and ultra-small devices • Development/application of integrated simulation tool suite – Applications in all tasks • • • • • Effects of passivation/metallization on SEE Tensor-dependent transport for SEE Extreme event analysis Spatial and energy distribution of e-h pairs Energy deposition in small device volumes Displacement-damage and totaldose effects in ultra-small devices • • • • Physical models of displacement single events Microdose/displacement SEE in SiGe and CMOS devices Single-transistor defect characterization Link energy deposition to defects through DFT molecular dynamics • Multiple-device displacement events • Dielectric leakage/rupture 10 2.6 nm (Equiv. Oxide Thick. ) Al2O3 VBD (V) 8 3.3 nm SiO2(15%N) 5.4 nm 3.3 nm (Physical) SiO2 Al2O3 6 2.2 nm SiO2 SiO2 4 Data From Sexton at al . 1998 2 '06 '03 '01 '97 VDD from National Technology Roadmaps '09 0 0 5 10 Film Thickness (nm) 15 20 Collaborators • IBM – SiGe, CMOS, metal gate, high-k • Intel – Strained Si and Ge channels, tri-gate, high-k, metal gate • Texas Instruments – CMOS • Freescale – BiCMOS and SOI • Jazz – SiGe • National – SiGe • SRC/Sematech – CMOS, metal gate, high-k, FinFETs • Sandia Labs – Alternative dielectrics, thermally stimulated current • NASA/DTRA – Radiation-effects testing • Oak Ridge National Laboratory – Atomic-scale imaging • CFDRC – Software development