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List of Important Derivations: (XII)
(1)
Electrostatics: (wtg: 10 Marks)
Axial Line
οƒ˜ ‘E’ due to a dipole
Equitorial line
οƒ˜ ‘E’ due to a circular ring
οƒ˜ A dipole inside a uniform/non-uniform external Electric field (Torque & P.E)
οƒ˜ Potential due to a dipole
Axial
Equitorial
π‘˜π‘ž
οƒ˜ Potential due to a point charge ( π‘Ÿ )
οƒ˜ Potential due to a ring.
οƒ˜ Relation b/w ‘E’ & V,
uniform field
non-uniform field
οƒ˜ Gauss law & its proof.
οƒ˜ Application of Gauss law to find ‘E’ for
π‘˜π‘ž
a.
point charge
( )
b.
Line charge
(
c.
Surface charge
(2πœ€ )
d.
π‘Ÿ
πœ†
2πœ‹πœ€0 π‘Ÿ
𝜎
)
0
Volume charge
πœŒπ‘Ÿ
(3πœ€ )
0
οƒ˜ Electric potential Energy due to a system of charges.
πœ€0 𝐴
οƒ˜ Capacitance of II plate capacitor (
𝑑
π‘˜π‘ž1 π‘ž2
(
)
1
οƒ˜ Energy stored: U = 2CV2
οƒ˜ Loss of P.E. when two charged capacitor are joined together.
βˆ†U=
𝐢1 𝐢2 (𝑉1 −𝑉2 )2
2(𝐢1 +𝐢2 )
Devices: Van-de – graff-Generator
(2)
Current Electricity: (wtg: 10 marks)
(2)
οƒ˜ ‘Ohm’ law & its theoretical proof.
οƒ˜ Kirchhoff’s law and its applications.
οƒ˜ Net resistance in an unbalanced bridge.
Wheat stone Bridge:
R1
R2
R3
R2
R1
π‘Ÿ
)
R=
2𝑅1 𝑅2 +𝑅3 (𝑅1 +𝑅2 )
𝑅1 +𝑅2 +2𝑅3
Series combination of cells : I =
𝑛𝐸
𝑅+π‘›π‘Ÿ
οƒ˜ Parallel combination of cells: I =
οƒ˜ Derivation of
Devices:
𝑛𝐸
𝑛𝑅+π‘Ÿ
𝐸
𝐸
( 1+ 2)
π‘Ÿ1 π‘Ÿ2
Enet = 1 1
+
π‘Ÿ1 π‘Ÿ2
1. Potentiometer.{to find E1/E2 & to find internal res.of a cell.
2. Meten Bridge
3.
Magnetism : (Wtg: 10 Marks)
οƒ˜ ‘B’ due to a straight wire.
B=
πœ‡0 I
4πœ‹ π‘Ž
[ Sin∅1 + Sin∅2 ]
οƒ˜ ‘B’ due to a circular of ring & straight current carrying wire.
οƒ˜ Ampere’s(Regular & irregular path) circuital law and its proof.
οƒ˜ Application of ampere circuital law
‘B’ due to straight wire
Solenoid
B= πœ‡onI
Totroid
οƒ˜ Force on a current carrying wire and on a moving change.
οƒ˜ Mutual force b/w two parallel wires.
οƒ˜ Torque experienced by a current carrying coil palced inside a uniform external magnetic
field: ; Torque = NIAB Sinπœƒ
οƒ˜ πœ‡π‘Ÿ = 1 + π‘₯π‘š
οƒ˜ Torque on a Bar-Magnet (Magnetic dipole) inside a uniform external field.
οƒ˜ P.E. of a dipole.
οƒ˜ Relation b/w true dip and apparent dip and apparent dip.
Devices:
(3)
(1)
Cyclotron
(2)
Moving coil Galvanometer and its conversion to A & V
EMI, A.C
οƒ˜ Motional Emf in a moving rod πœ€ = -Blv.
οƒ˜ Motional Emf of a rotating rod πœ€ = ½ Bl2w.
οƒ˜ Self inductance of a long solenoid.
οƒ˜ Mutual inductance of two solenoid.
1
οƒ˜ Magnetic energy stored in a coil U = 2 LI2
οƒ˜ Eav =
2πœ€0
οƒ˜ Erms =
πœ‹
πœ€0
√2
and Iav =
, Irms =
√2
Pure resistive
Pure Inductive
Pure capacitive
RC Circuit
LC Circuit
LR Circuit
LCR Circuit
Variation of
impendence
with frequency
of applied AC
source.
Devices:
(4)
πœ‹
𝐼0
οƒ˜ A.C Circuits
οƒ˜
οƒ˜
οƒ˜
οƒ˜
2𝐼0
Phasor diagram
Average power loss in an AC circuit Pav = Irm Vrm Cos∅.
Q-factor.
Resonance and its applications.
(1)
AC Generator
(2)
Transformer.
Ray Optics:
1
οƒ˜ Mirror Formula 𝑓 =
1
1
𝑣
+ 𝑒, m= − 𝑒
𝑣
οƒ˜ Refraction at spherical surface:
πœ‡1
𝑣
πœ‡1
𝑣
−
πœ‡2
−
𝑒
πœ‡2
𝑒
=
=
πœ‡2 −πœ‡1
For Both convex
& concave
surfaces.
𝑅
πœ‡1 −πœ‡2
𝑅
οƒ˜ Real and apparent-depth.
𝑑
οƒ˜ Lateral shift d= cos π‘Ÿ sin(𝑖 − π‘Ÿ)
οƒ˜ lens makes formula: & its application
1
πœ‡2
1
1
= ( − 1) ( − )
𝑓
πœ‡1
𝑅1 𝑅2
1
οƒ˜ Combination of lenses
οƒ˜ Lens formula:
1
𝑓
1
=𝑣−
οƒ˜ π›Ώπ‘š = (πœ‡ -1)A, πœ‡ = sin
1
1
1
𝑓2
(𝑓 = 𝑓 +
1
𝑣
, m=𝑒
𝑒
(π›Ώπ‘š+𝐴)
2
)
𝐴
/𝑠𝑖𝑛 2 , 𝛿 + A = I + e.
οƒ˜ Magnifying power of microscope.
Simple:
m = 1 + D/fe.
compound:
𝑣
𝐷
m = 𝑒0 (1 + 𝑓 )
0
𝑒
οƒ˜ Magnifying power of Telescope:
At LDDV:
𝑓
𝑓
m = 𝑓0 (1 + 𝐷𝑒)
𝑒
𝑓
for normal vision m = 𝑓0
𝑒
Devices:
(1)
Astromical & Terrestrial
Telescope
Reflecting
(2)
(3)
Microscope
Eyes.
Simple & compound.
Wave optics
οƒ˜ Intensity I = a2 + b2 + 2abcos∅,
∅ = 2nπœ‹
Maximum
π·πœ†
∅ = (2𝑛 − 1) 2𝑑
οƒ˜ YDSE: Derivation of
yn =
&
Minimum
π·π‘›πœ†
Maximum n= 0,1,2,--------
𝑑
π·πœ†
yn = (2n-1)2𝑑
Minimum n= 1,2,3, -----------
οƒ˜ Relation b/w intensity maxima and intensity at a general point on the screen: i.e.
I = I0 Cos2∅/2 ,
οƒ˜ SLDE:
∅
Phase diff. b/w maxima pt. & genera point on the screen.
Derivation of
yn-1 = (2n-1)
yn =
Derivation of
2𝑑
Maxima, n≠0, n≠1, n= 2,3,--------
π·π‘›πœ†
Minima, n≠ 0, n=1,2,3-----------
𝑑
2πœ‡π‘ π‘–π‘›πœƒ
οƒ˜ Resolving power of microscope:
Resolving power of Telescope Rp =
π·πœ†
Rp = ( 1.22πœ† )
𝐷
1.22πœ†
οƒ˜ Malus law I=I0cos2πœƒ
οƒ˜ Brewster Law: πœ‡ = tan ip
(6)
Atomic Nucleus:
οƒ˜ Bohr model & Derivation of vn , rn & En of an electon revolving in nth orbit of a H & H-like
atom.
1
1
1
οƒ˜ Derivation of 𝛾 = πœ† = Ry Z2 (𝑛2 − 𝑛2 )
𝑖
𝑓
Ry = Rydberg constant.
οƒ˜ Binding Energy B.E = (βˆ†π‘š) c2, βˆ†π‘š = mass defect.
for numerical case: B.E. = βˆ†π‘š (amu) x 931.5 Me
οƒ˜ Derivation of T1/2 =
1
{tav = πœ† &
(7)
0.693
, N= N0e-λt, A=A0 e-λt
πœ†
𝑁
𝑁0
=
𝐴
𝐴0
1 𝑛
= (2) , n= 𝑇
𝑑
1/2
}
Dual Nature:
οƒ˜ λ=
12.27𝐴0
πœ†
οƒ˜ Davission – Germen Experiment.
οƒ˜ Photo- electric effect.
1243
οƒ˜ Vs = πœ†(π‘›π‘š) 𝑒𝑣 − 𝑀0 (𝑒𝑣)
(8)
Semiconductors:
οƒ˜ Energy-Band Theory & difference b/w metals semiconductors and insulator on the basis of
Energy-bands.
οƒ˜ Formation of N-types and P-type semiconductors.
οƒ˜ Forward & Reverse bias characteristics of Jn. diode.
οƒ˜ Application of Jn. diodes.
 Half & full wave rectifier
 LED & Photo diodes
 Solar cells
 Zener diodes
IB
οƒ˜ Jn-transister: Formation & its type
οƒ˜ Transister action.
Input
οƒ˜ CE-transister characterstic
VBE
Output.
οƒ˜ Transistor parameter 𝛼, 𝛽, 𝐴𝑣 ,gm & their interrelation.
οƒ˜ Transistor as
a switch
pnp
an amplifier
an Oscillator
npn
οƒ˜ Logic Gates: NOT, OR, AND, NAND, NOR, X-OR symbols, Truth Tables and mathematical
expressions.
(9)
P.O.C.:
οƒ˜
οƒ˜
οƒ˜
οƒ˜
οƒ˜
Modulation & its need.
Circuit of AM and its demodulation.
Band-width of different modes of communication & different channels.
Ground-wave, sky wave & satellite communication.
Optical communication (Qualitative ideas only).
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