3D Modeling and Simulation of Hg2Cl2 Crystal Growth by Physical Vapor Transport Joseph Dobmeier Advisor: Patrick Tebbe Minnesota State University November 2011 Introduction Hg2Cl2 crystals are useful for their acousto-optic properties Used to construct acousto-optic modulators and tunable filters in the low UV and long wave infrared regions 8-10μm[1] Image from Kima et. al., 2008 Applications include: laser Q-switches, fiber-optic signal modulators, spectrometer frequency control Introduction Two technologically mature and commercially available materials for this region are Terillium Oxide (TeO2) and Thalium Arsenide-Selenide (TAS) Image from http://www.olympusfluoview.com/theory/aotfintro.html TeO2 is fragile and prone to damage TAS is extremely toxic and requires specialized handling Introduction Images from Kima et. al., 2008 Outline Modeling Simulation Results Future Research Directions Modeling Four conservation equations[2-4]: Modeling Geometry: Vertically oriented 5x5cm cylinder with the source at the bottom Boundary conditions: Walls: no slip, adiabatic, and impermeable Source and sink: constant temperature, tangential velocity of zero, normal velocity calculated using Fick’s law and Dalton’s law of partial pressures[6] Outline Modeling Simulation Results Future Research Directions Simulation Performed by a commercially available code FIDAP, a product of Fluent Inc. Capabilities extended to physical vapor transport process through the use of a subroutine Subroutine determines the boundary nodal velocities by a finite difference calculation of the mass fraction derivatives Each nodal velocity was then scaled to ensure source and crystal mass flux average values satisfied the continuity equation[2] Initial conditions for velocity were zero, a linear profile was selected for the concentration profile Simulation Mesh density: Parametric studies were performed in 2D on the mesh density Three sizes were compared: 1. 31x31 2. 61x61 3. 121x121 Flowfield development was found to be identical, but some small-scale recirculation cells were not captured A frequency analysis was undertaken comparing the oscillatory regions which agreed across densities Simulation RaT=8.19e5, Pe=2.96, Pr=0.758, Le=0.500, Cv=1.06 RaT=8.19e5, Pe=2.96, Pr=0.758,Le=0.5,Cv=1.06 20 8 6 10 4 2 0 0 u u -2 -10 -4 -6 -20 -8 -10 -30 -12 -14 -40 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 t RaT=8.19e5, Pe=2.96, Pr=0.758, Le=0.500, Cv=1.06 0.9 1 0 0.075 0.15 0.225 0.3 0.375 0.45 0.525 0.6 0.675 0.75 0.825 t RaT=8.19e5, Pe=2.96, Pr=0.758, Le=0.500, Cv=1.06 100 10 121x121 node 61x61 node 31x31 node 90 80 5 70 60 u Power* 0 50 40 -5 30 20 -10 10 -15 0 0.1 0.2 0.3 0.4 0.5 t 0.6 0.7 0.8 0.9 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Frequency (Hz) 1 1.1 1.2 1.3 1.4 1.5 Simulation Table of parameters used in study (Ts = 330°C): Case ΔT (K) n 1 2 1 2 7.5 1 3 20 1 4 30 1 5 7.5 0.01 6 7.5 0.001 7 7.5 0.0001 Rat Pr Le Pe Cv 3.83 x 104 1.80 x 105 8.19 x 105 1.92 x 106 1.80 x 103 1.80 x 102 1.80 x 101 0.871 0.831 0.758 0.717 0.831 0.831 0.831 0.411 0.366 0.500 0.540 0.366 0.366 0.366 0.876 1.90 2.96 3.50 1.90 1.90 1.90 1.71 1.28 1.06 1.03 1.28 1.28 1.28 time step Δt* 0.00125 0.00125 0.000125 0.000125 0.00125 0.00125 0.00125 Outline Modeling Simulation Results Future Research Directions Results Case 1: Results Case 2: Results Case 5: Results Case 1 (0, 0, 0.5) Case 2 (0, 0, 0.5) Case 3 (0.49, 0, 0.4) Case 5 (0.33, 0, 0.5) Outline Modeling Simulation Results Future Research Directions Future Research Complete bifurcation graph showing flowfield regime transition Perform phase-space analysis of transient and oscillatory regions Simulate more cases for current geometry Modify geometry for different furnace layouts Reduce total run time through parallel implementation of simulation with newer commercial software code Questions ??? References [1] Joo-Soo Kima, Sudhir B. Trivedia, Jolanta Soosa, Neelam Guptab, Witold Palosza. Growth of Hg2Cl2 and Hg2Br2 single crystals by physical vapor transport. Journal of Crystal Growth 310 (2008) 2457–2463. [2] P. A. Tebbe, S.K. Loyalka, W. M. B. Duval. Finite element modeling of asymmetric and transient flowfields during physical vapor transport. Finite Elements in Analysis and Design 40 (2004) 1499-1519. [3] W. M. B. Duval, Convection in the physical vapor transport process-I: thermal, J. Chem. Vapor Deposition 2 (1994) 188-217. [4] W. M. B. Duval, Convection in the physical vapor transport process-II: thermosolutal, J. Chem. Vapor Deposition 2 (1994) 282-311. [5] D. W.Greenwell, B. L. Markham and F. Rosenberger. Numerical modeling of diffusive physical vapor transport in cylindrical ampoules, Journal of Crystal Growth, 51 (1981) 413-425. [6] R. B. Bird, W.E Stewart and E. M. Lightfoot. Transport Phenomena 2nd Ed., John Wiley & Sons Inc., (2002) 268, 353-356. [7] F.C. Moon. Chaotic and Fractal Dynamics. John Wiley & Sons Inc., (1992) 53-55.