MIL-HDBK-217F
BEF?1991
SUPERSEDING
MIL-HDBK-217E,
2 J8nwry 1990
MILITARY
NotIce 1
HANDBOOK
.
RELIABILITY PREDICTION OF
ELECTRONIC
EQUIPMENT
AMSC N/A
DISTRIBUTION
STATEMENT
A: Approved for public release; distribution unlimited.
MIL-HDBK-217F
DEPARTMENT OF DEFENSE
WASHINGTON DC 20301
RELIABILllY
PREDICTION
OF ELECTRONIC
EQUIPMENT
1. This standardization handbook was developed by the Department of Deferw
federal agencies, and industry.
with the assistance of the military dep~ments,
2. Every effort has been made to reflect the latest information on reliability
prediction procedures. It is the intent to review this handbook periodically to
ensure its completeness and currency.
3. Beneficial comments (recommendations, additions, deletions) and any pertinent
data which may be of use in improving this dooument should be addressed to:
Commander, Rome Laboratory, AFSC, AlTN: ERSS, Griffiss Ak Force Base,
New York 13441-5700, by using the self-addressed Standardization Document
Improvement Proposal (DD Form 1426) appearing at the end of this document
or by letter.
....—
I
.
MIL-I+DBK-217F
CONTENTS
SECTION
1.1
1.2
1.3
1: SCOPE
Purpose .... .. .... ..... .. .. ... ... ....0...... .... .... .... . .... ....... ........ .. . ...... . .. .. .... .... ... ..... .. ... .... ....
Application .. ...... ...... .... ...*.. ......... .... .... ...... . ,, *........ ..........*. .....*...... .... ........ ..... .. ......
@rnputefized RdiabWty Predktbn .. .... .. .... ...... .. ....... .. .... .. .. .... .. .. ...... ... .. .... ..... ... .....
SECTION
2:
... ... ....... .... .. ................... .. .. ... ... ... .... ... .... ... .....
2“1
SECTION
3.1
3.2
3.3
3.4
3:
INTRODUCTION
Reliability Engineering . ........ ..
The Role of Reliability Predktbn ...**.*.*..... ......... ................ ......... ................. .............
Limitations of Reliability Predictions ..... *..*.*...
Part Stress Analysis Prediction ..... ........ ........ ...... . .. .... .. ..... ...... ... ... . ...0.. .... ... ... .... ....0
3-1
3-1
3-2
3-2
SEHION
4:
SECTION
5:
MICROCIRCUJTS,
INTRODUCTION .......**...**.....................0..... .................
C3ate/Lo@cArrays and Microprocessors ...... ..................................*... .....*..... .............
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REFERENCE
DOCUMENTS
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RELIABILIN
ANALYSIS
EVALUATION
.....................*..*... .......................
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1“1
1-1
1-1
4-1
5-1
5-3
5-4
5-7
5-8
5-9
5-10
5-11
5-13
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
Memorfes ... ..... .... .... .... .... ...... .. . ...... .... .. .. .... ........ ...... ... .......... .... .. .... .... .. ..... .. .. ........
VHSICNHSIC
Like ... ........ ....... ........... ... ...... ........ .... ....... ....... .... .................... ..........
GaAs MMIC and D@ai Devioes . ........ .... .............. ... ...... ........ ..... ... ..... .. .... .. .... .. .. .......
Hybrids . .. .. ............ .... ...... .... ... ...... .. ........ ........ .... ....... .......... .... ...... ........ ... .. .. ... ... ....
SAW Devices .... .......... .. .... .... .. ...... ... .... .... ..... . ... .... ...... ... .... .. ...... .... .. .. ... ...... ..........
Magnetic Bubble Memories ........ ............ .... .. ... .... .......... .... ...... ... .. ... ..... .. ...... .. .. .. .....
XT Table for All .......... ............ ...... ...... ............ ...... ................... ........ ...... ............ .......
5.9
C2 Table for AIl . ....... .... .... ........ .... ....... .. ...... .. .... .............. ... .. .... ... ..... .. .......... ...........
5-14
5.10
5-15
5.11
%EsXL and fiQ Tabk= for ~i ..... ........ .... .... .... ... .. .. ........ ...... ... ....... ....... ........ .. .. ...... ...
TJ Determination, (All Except Hybrids) ...................................*... ............* ..................
5.12
TJ Determination,
(For Hybriis) ........... ......... ........................................... ....... .........
5-18
5.13
Examples .... ........ ........ .. .. ................... .. ........ .... .. .... ..... .... .......... ...... .... .... ... ...... .... ..
5-20
6:
DISCRETE
SEMICONDUCTORS
Discrete Semiconductors, Introduction ....... ........... ....... ......... .... .. ... ..... .. ... .... ... ..... ...
Diodes, Low F~ency
..... ........ .... .. .......... . .. .. ........ ...... .......
High Frequency (Microwave, RF) .... .......... .... .. ........ ..... ........ .... ....... .. ..... ......
Transistors, LOW Frequency, Bifx)lar ... .... .... ....... ... .... ..... .... ...... .... .. .... ..... ........ ... ... ...
Transistor,
Low Frequency, Si FET ..... ............... ............................................... ...*..
Transistors, Unijmction ..........00....................... .............. ....... ........ .......... ........... ... ...
Transistors, Low Noise, High Frequency, Bipolar . ..... ..... .... ...... ... ... ... .... .. ..... .. .. ........ .
Transistors, High Power, High Frequency, Bipolar .....................* ..........* .............. ... ...
Transistors, High Frequency, GaAs FET .. .. ..... .............0.... .. .... .... ... ... .... ....... .. ...........
Transistors, Hgh Frequency, Si FET ....... ....* ... .. ..... ... ... ...... .... ...... .. .... . .... ...... .... .... ...
~
end SCRS . ... .... ........ ........ .... .. ........... .... ...... ........ . ... .. .... .. .... .. .... ...... .. . ....
Optoelectronics, Detectors, Isolators, Emitters ........ ........ .. ... .. .......... .. .... .... ... .. .... .....
Optoeiectmnios, Alphanumeric Displays ... .... .. .... ................. .. .... ...... .... ... .... ... ..... .. ...
OploekWonios,
Laser Diode ................. ......* ...... .. ............ .... .... ... ...... .. ..*...... . .... ... ..
TJ Determination ..... .. .... .... .... ............ ... .... .... ...... .. ...... .. .... ..... .... ...... .... .... ..... .. .... ....
6-1
6-2
6-4
6-6
6-8
6-9
6-10
6-12
6-14
6-16
6-17
6-19
6-20
6-21
6-23
Example . ..... .... .. ........ ... .... ......... ............... .... ...... .. .................... .. .... ....... .. .... .. .........
6-25
SECTION
6.0
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.11
6.12
6.13
6.14
6.15
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5-17
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HI
MIL-HDBK-217F
—
CONTENTS
SECTION
7:
TUBES
All Types Except TM/T and Magnetron ........ ....................................................... .......
Traveli~ Wave . ....... .... ...... .... ........... ...... .. ...... .. ........ .... ......... .............. .. ...... ...........
Magnetron .. .. .......... .... .... .. ........ ... .......... .. .... ...*..... ...... .......... .. .... .......... ..... .........0..
7-1
7-3
7-4
SECTION
8.0
8.1
8.2
8.3
8.4
LASERS
0:
Introduction ... .................... ..... .... .. .... ...... .. ...... .... ......... .......... .. .. ............. .... ...... .. ....
Helium and Argon . .......... ... .......... .... ..... .... ... ..... .. ...........** . ... .... .... .... .... ...............* . ..
Catin
Dmxide, Sealed . .... .. ............ .. ....... ... ... .... ...... .. ...... .. .. ... ........ ...... .. ...... ....... ..
Carbon Dioxide, Fbwing .... .. ...... .... ........ .... ... .... .. .... ...... .... ....... ........ ...... ........ .........
SoIii State, ND:YAG and Ruby Rod .... .... .... .... ... ............ .. ............ .. .. .. ..... .... ...... .... ...
8-1
8-2
8-3
8-4
8-5
SECTION
9.0
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
9.10
9.11
9.12
9.13
9.14
9.15
9.16
9.17
RESISTORS
9:
Introduction .... ... ... ....... ............ ... .. ........ .... ... ... ................... .. .. ........ .... ......... ...... .. .. ..
Fixed, Composition (RCR, RC) ................................. ............................... .................
I%@, Fitm (RLR, RL, RN (R.C, or N). RN) . ............................ . ....... .... .................... ....
Fixed, Fltrn, Power (fWI) ........ ........ ...... ........ ... .. .. .......... .. ................... ............ ...........
Network, Fixed, Film (RZ) .. ........... ............. ............. .............. .................... ................
Fixed, Wirewound (RBR, RB) ... ......... ................... ............................ .................. ......
Fixed, Wkewound, Power (RWR, RW) ......... ...... .... .. .... ... .......... .. ........ .. ........... ...... ...
Fixed, Wirewound, Power, Chassis Mounted (RER, RE) ............................................
Thermistor (RTH) .......... ..... ........ .... ..... .... ...... .. .. .... .... ..... .... .... ........ .. ............ ... .. .. ....
Variable, Wirewound (RTR, RT) ......... ................................................................. ......
Variable, Wkewound, Precision (RR) ......... ....... ... ....... .......... .... .... ..... ................. ......
Variable, W/rewound, Semiprecision (RA, RK) . .... ................ ....... ................... ..... ..... .
Variable, Wkewound, Power (RP) . .......... .. ...... .. .. ..... .......... .... .... ....... .... ........ ..... ......
Variable, Nonwirewund
(RJ, RJR) ................................ ...........................................
Variable, Composttlon (RV) ...................*.. ........ ................................ ...... .. ................
Variabte, NOnwmwu nd, Fitmw’KI Prectsion (RQ, RVC) ... .... ........ ....... .. .... ................
Cakulation of Stress Rat& for Potent&meters . .... ........ .... .... ..... .... .... .. .. .... ..... ........ ...
Example . .. ..... .. ...... ....... ...... .... ..... ...... .... ... .. .. ............. .... .... ... .... .. ................... .........
9-1
9-2
9-3
9-5
9-6
9-7
9-8
9-1o
9-12
9“13
9-15
9-17
9-19
9-21
9-23
9-25
9-27
9-29
SECTION
10: CAPACITORS
Fixed, Paper, By-Pass (CP, CA) .. .... .... ...... ...... .. .. ... .... .... .......... ....... .............. ........ ...
Fixed, Feed-Through (CZR, CZ) . ........ ...... ........ .. ....... ...... .... .... ......... .. ...... .... .... .... ...
Fixed, Paper and Plastic Fitrn (CPV, CQR and CQ) .....................................................
Fixed, Metallized Pqw, Paper-Plastic and Plastic (CH, CAR) .. ...... .. .... ... ............... .... .
F&ed, Plastic and Metallized Plastic .............................................. ............................
Fixed, Super-Metallized Plastic (CRH) ........ ....... ..................... .... ........ ....... ...... .... .....
F&ed, MICA (CM, CMR) ........ .. .. .... .............. ... .. .. .. .. ...... ........ ............. ...... .. ...... .... .....
Fixed, MICA, Button (CB) ..... .. ....* . .... .......... .. ... .... .... .... .......... ..... .. ..... ..... .... .... .... .. ...
Fued, GJass (CY, CYR) ......... ........ ............. ....... ... ...... ............ ..... .. .. .... .... .. .. .... .... .....
Fixed, Ceramic, General Purpose (CK, CKR) .............................................................
.
and Chip (CCR and CC, CDR) . ...... ........ .
Fixed, Cerarnk, Tenpemtum ~
Fixed, Electrolytic, Tantalum, Solid (CSR) ........ .... .... .... .... ............. .... ....... .. .. ........ .. ...
Fixed, Electrolytic, Tantalum, Non-Solid (CL, CLR) ... .... .... .... ..... ........ ... ......... ..... .... ...
Fbd, Ektrotytic, Aluminum (CUR and CU) .... .. ...... .... .. .... ... .... .... .. .. .. .. ..... .... ...... .... .
Fixed, Electrolytic (Dfy), Aluminum (CE) ...................................... ..............................
Variable, Ceramic (CV) .. .......... ............ ............. ........................ ................................
Variable, Pkton Type (PC) ........ ......... ......... ......... ......... ................... ........................
Varitie. ArTfimmr
(C~ ............. ...... ........ .. ........... ...... ...... ....... ... ..... .... ........ ...... ...
Variable and Rxd. Gasor V.um(CG)
.. .... .. ..... ......... ... ...... ........ .... ... .... ......... ...... ..
Example ... ..... ........ .. ............ ... ........... .. .. ..... .... .. ..... .... .... ........... .... ..... .... ........ ..... .. ..
1o-1
10-3
10-5
10-7
10-9
10-11
10-12
10-14
10-16
10-18
10-20
10-21
10-22
10-24
10-26
10-27
10-28
10-29
10-30
10-32
7.1
7.2
7.3
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.9
10.10
10.11
10.12
10.13
10.14
10.15
10.16
10.17
10.18
10.19
10.20
iv
——
MIL-HDBK-217F
CONTENTS
SECTION
11.1
11.2
11.3
DEVICES
INDUCTIVE
11:
Transformers ........... .... .... .......... .. .... ..... .... .... ... ... ...... .... ....... .... .. .. .... ...... .. ..... .... .... ..
cob .... .....*.. .............................................................................*...... .....................
Determination of Hot Spot Temperature ............................................................0...0..
11-1
11-3
11-5
SECTION
ROTATING DEVICES
12:
Motors . . .... ........ .... .....* .. ........ .. .......... ......... .... ...... .. .. .... .............. ..... ........ .............
Synchros and Resolvers .............. .... ........ ..... .. ...... .... .... ........... ... ....... .. ............ ... ....
EIapsed Time Meters . .. .. .... ............*.. .. ........ .... ... ..... .... .... ............ ....... .. .. .... ........ ... ..
Example ... ...... .. ... .. .. ..... ........ ......... ........... .. .... .. ..... .... ........... ...... .. .. ... .. .......... ..... ....
12-1
12-3
124
12-5
RELAYS
13:
Mechanbl ......................................0.. ......................... ...................................0.....
Solid State and Time Delay
13-3
12.1
12.2
12.3
12.4
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I
SECTION
13.1
13.2
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13-1
(
I
SECTION
14:
SWITCHES
Toggle or Pushbutton ............ ..... ...... ...... ........ .... .............. .......... .. ... ... ............ ........
Basic sensitive .. .... ...... .. .. .......... .. .. ... ...... .... .. .... ...... .... .... ....... ............ ........ .. .. ... .... ..
Rotary .. ... .......... ...... ... .... ...... .. .......... .... ...... ... ...... .. .... ........ .... .... .. ..... ....... ... .... .... ...
Thumbwheel ... .. ....... ....... ...... ....... .... ........ .... ........ .. .... ........... ...... ...... ....... ... ..... .... ..
Circuit Breakers . ........ ........ .... .... ...... ........... .... .. ... ....... .... ....... .... .. .. .... .... ........ ..... ....
14-1
14-2
14-3
14-4
14-5
SECTION
15.1
15.2
15.3
15:
CONNECTORS
General (Except Printed Cir@t Board) .......... .... .... ...... ... .. ...... .... ... ..... ... .... .... .... .......
Printed Circuit Board . ... ........ .... .... ...... .... ... .... .... .. .. .. .. ........... ...... .. ...... ...... .. .. ....... ....
Integrated CituJlt Sockets .. ...... .......... ...... .. ... .......... .... .... .. ...... ... .. .. .............. .... .... ...
15-1
15-4
15-6
SECTION
16.1
lNTERCONNECTtON
ASSEMBLIES
16:
lntemomectkm Assenb+ies with Ptated Through t-totes . .. ....... ....... ... .... .... ........ ....... .
16-1
SECTION
17.1
17:
CONNECTIONS
Connections ..........................................................................................................
17-1
SECTION
18.1
METERS
18:
Meters, Panel .... ...... .. .... .. .. ................... .... ...... .... ...... .... ... .... ........ ........ .... .... ... .... ....
18-1
SECTION
19.1
19:
QUARTZ CRYSTALS
Quartz Crystals.......................................................................................................
19-1
SECTION
20.1
20:
hmp
LAMPS
.. ... .. .. .... ...... .... . ...... ...... .... ........ .. .... .. ....... ... ... .... .... .... .... .. .. . .. .... ........ .. .. .......
20-1
SECTION
ELECTRONIC
FILTERS
21:
Eiectmrtb Fitters, NorwTunabte................................................................................
21-1
SECTION
22.1
FUSES
22:
Fuses . . . ....0.... .. .. ....... ........ .... .......... .... ............ ... .. .... .. .. .... .... ....... .. ..... ... .. .. .. .........
22-1
SECTION
23.1
23:
MISCELLANEOUS
PARTS
Miscellaneous Patis ....... ..... ......... .. .... ... .... .... .... .......... ....... .... ........ .. .... ........ .. ....... ..
23-1
14.1
34.2
14.3
14.4
14.5
21.1
●
APPENDIX
A:
PARTS
COUNT
APPENDIX
B:
VHSIC/VtiSIC-LIKE
APPENDIX
C:
BIBLIOGRAPHY
RELIABILITY
AND
VLSI
PREDICTION
CMOS
. ...... .... .. ..... . ..... . .. .. .. .. ... ... .. .
(DETAILED
MODEL)
A-1
... .. .. ... ... .
B-1
. ......... .... .......... .... ... ...... .... .... .. .... ....... ...... ........ ............ ... ..
c-1
v
MIL-HDBK-217F
—
CONTENTS
LIST OF TABLES
Table
Table
Table
Table
Table
3-1:
3-2:
4-1:
&l:
S2:
Parts with Multi-Level Quality Spedfications .............................. ..........................
Environmental Symbol and Desdptiin ..............................................................
Reliability Analysis Cbckfist ...... ............... ... .. .......... .... ........ ..... ........ .. .......... ....
Default Case Temperatures for All Environments (~) ..... .. .... ....... ................. .......
Approximate Thermal Resistance for SernbncWtor
Devices
in Various Package Sizes ..... .... ..... ............. .... ........ .... ........ ... ............ .... ...... ... .
3-3
3-4
.
6:2;
6-24
LIST OF FIGURES
Figure 5-1:
Figure 8-1:
Figure 9-1:
vi
Cross Sectbnal Vk!w of a Hybrid with a Single Multi-Layered Substmte ......... ... .. ..
Examples of Active O@cal Surfaces ....... ........ ...... ... .... .... ... ..... .. ............. .... .... ...
MIL-R-39008 Deratinfj cum ... .. ............. ........................... ... ................. ... .. ... .. .
5-18
8-1
9-1
MIL-HDBK-217F
FOREWORD
This revision to MIL-HDBK-217
provides the following changes based upon recently completed studies
(see Ref. 30 and 32 listed in Appendix C):
1.
New failure rate prediction
microcircuits:
MonoliihE B~lar
●
models are prov-kled for the following nine major classes of
Dqital and Linear Gate/lm@c Array Devioes
Monolithic MOS Digital and Lmar
●
Gate/Logic Amy Devfces
●
Monolithic B@olar and MOS Digital Microprocessor Devkes (Including Controllers)
●
Monolithic Blpotar and MOS Memory Devices
●
Monolithk (W@
●
Monolithic GaAs MMIC Devices
●
Hybrid Microcircuits
●
Magnetic Bubble Memories
Di@tal Devices
Surface Acoustic Wave Devices
●
This revision provides new prediction models for bipolar and MOS microcircuits with gate counts up to
60,000,
linear microcircuits with up to 3000 transistors, bipolar and MOS digital microprocessor and co-
processor
up to 32 bits, memory devices with up to 1 nlftion bits, GaAs monolithic microwave integrated
circuits (MMICS) with up to 1,000 active elements, and GaAs digital ICS with up to 10,000 transistors.
Cl factors have been extensively revised to reflect new technology devices with improved
the activation energies representing the temperature
MOS devices and for memories.
The
reliability,and
sensitivity of the dice (nT) have been changed for
The C2 factor remains unchanged fmm the previous Handbook version,
but includes pin grfd arrays and surface mount packages using the same model as hermetic, solder-sealed
dual in-line packages.
New values have been included for the quality factor (~),
and the environmental
factor (@.
use, to delete the terrperature
the learning factor (~),
The rrwfel for hybrid microcircuits has been revised to be simpler to
dependence
provide a method of oakulating ohp jundon
of the seal and interconnect failure rate contributions, and to
temperatures.
2.
A new model for Very High Speed Integrated Circuits (V1-fSIC/VHSIC
Scale Integration (VLSI) devices (gate counts above 60,000).
Like) and Very Large
3.
The reformatting of the entire handbook to make H easier to use.
4.
A reduction in the number of environmental fado~
5.
A revised failure rate model for Network Resistors.
6.
Revised models for Ms
and Ktystrons based on data supplied by the Electronic Industries
Association Microwave Tube DiWon.
(~E) from 27 to 14.
vii
-- . ...=--------
- —----
--u.
I --
1
-u
I
MIL-HDBK-217F
1.0
Purpoee
- The purpose of thfs MruboOk
SCOPE
is to establish and maintain consistent and uniform
for estimating the hhemnt rek&Slity (i.e., the reUabflityof a mature design) of rnilbry @edron&
predictionsckhg aoquis&bn progmms
~~~
systems. It provides a common basfs for ~
for military ebctrcmc systems and equipment. h atso establishes a common basis for oomparfng and
evafuatlng reliability predictions of rdated or competitive destgns. The handbook is intended to be used
as a tool to increase the reliabil”~ of the equ@merx being designed.
ti.~
1.2
Appllcatlon - This handtmok oontains two methods of reMWiJity pmdiotbn - “Part Stress
Analysis” In Sectfons 5 through 23 amf 7%rts Count- in Appendix IL These methods vary in degree of
informatbn needed to apply them. lhe Part Stress Anafysii Method recpires a greater amount of detailed
In&mtfon
and ts appfkabfe mrfng the later design phase when actual hardware and c&wits are being
designed. The Parts Count Method raquires less infonnatbn, generally part quantities, qmtity level, and
the applkatbn environmen& This method Is appfioable cMng the early de@ase and du~
pmpo@
formulation. In general, the Parts Count Metfwd wffl usually result in a more conservative estknate (i.e.,
~f*mte)ofsy’stem
r@taMtythanthe Parts Stress Method.
1.3
Computerfzad Rellablllty PmcffctlOn - Rome Laborato~ - ORACLE is a computer program
Based on
developed to aid in appfying the part stress analysis procedure of MIL-HDBK-217.
environmental use chamcteristks, piece part oount, thermal and electrical stresses, subsystem repair rates
and system configuration, the program calculates piece part, assemMy and subassembly failure rates. It
also flags overstressed parts, afbws the user to perform tradeoff analyses and provides system meantime-to-failure and availability. The ORACLE computer program software (available in both VAX and IBM
co~atible
PC versbns) is available at replacement tape/disc cost to all DoD organizations, and to
contractors for applbcatbn on spedfk
DoD contraots as government furnished property (GFP).
A
statement of terms and conditions may be obtained upon written request to: Rome Laborato~/ERSR,
Grtffiss AFB, NY 13441-5700.
f-l
I
..
,..
-,
..-”,
.-
MIL-tiDBK-217F
2.0
REFE!?ENCE
DOCUMENTS
~s~cites
somespecificatbns which have beencanoslle dofwhiohdescrb ectevicesthatam
nottobeused fornewdes@n. lWiinfomatti&s
Wms$arytmcxames omeofthesed evicasarusecfin
soalfed %ff-th~
eqdpment which the Depwtment of Defense purchases. The documents cited
m this section are for @dance and information.
SPECIFICATION
MIL-C-5
SECTION #
10.7
MIL%l 1
9.1
MlL-R-l 9
9.11
MIL-G20
10.11
FMed,Mii-Dieisctric, General Specifii
Ca@&s,
~,
F&a
for
for
composition (Insufated) General $pecuii
Resiekx. Variab&gWirewound (Low Operating Tmpwatum) General
Spo&@atbn for
~)
@Pw@%=d~
~“
v@fw=Estdfkhed and Nonestabiished Reliability, General Specifiiion
for
MIL-R-22
9.12
Rask!or, Wuewow
MIL-C-25
10.1
~.
fiti
p~r~~~
Dire Cwrent (Hermetically Sealed
in Metal Case@, General Specification for
MIL-R-26
9.6
MIL-T-27
11.1
ML-(X2
10.15
Resistor, Fued, Wkewound (Power Type), Genarai Specifhbn
10.16
for
Tmnsfonner and fndwtor (Audio, Power, High Power, High Power
Pulse). General Sfxdiibn
for
~r.
Pdar&ed),
MIL-G81
Power Type, General Spa&cation for
Fiu~ ~fo~~
(DG fgruminum.W
Gened spadkamn
E~@,
Capacitor, Variable, Ceramic Dielectric (Trimmer). General Specification
for
MIL-92
10.18
MIL-R-93
9.5
MIL-R-94
9.14
Resistor, Variable, Composition, General Specifiin
MIL-V-9S
23.1
Vior,
W-L-1 11
20.1
-.
W=
14.5
Ckauit Br@der, MOidOdC&m, BrarmflcfrcuRand~
W-F-1726
22.1
Fuse, Q@ridge, CJassH (Thii mvem renewable and mrwnebie)
w-f-i814
22.1
Fuse, Camidge, High Interrupting
Cqmcity
MfL-G3098
19.1
_
MIL-G3807
15.1
MIL-G3643
15.1
Resistor, Fwed, Wkewound (Aocura!e), General Spdfkdon
MlL4N8so
Luw
u
I
15.1
for
for
for
Interrupter and Self -RectifyingO General Specification for
Miniature, Tungaran Fikment
hadaant
Unk ~
~~end Spcifiw&m for
Connector,Coax&~Radii Frequency, Series Pulse, Gene@
,
SpdMlOns
for
Connector, Coaxial, Radio Frequency, Series NH, Associated Ftiings,
~neral
I
Variable, Air Dielectric (Trimmer), General Specificaii
Ctpcitor,
s~
for
Connector, Coaxial, Radio Frequency, Series LC
MIL-HDBK-217F
.
2.0
REFERENCE
SECTION #
SPECFKATJON
.
DOCUMENTS
Mt4X655
15.1
conneotor, P&q and Ramptda,
_(Jl=SeriasTwin)and
Associated Fitlmgs, General SpuM@mn
.
ML-C-3767
15.1
~.
SpacMiion
MIL-S-3786
14.3
S*.
~bn
Rotary (Circxit Selector, Low-Current (Capady)),
for
MfL-G3950
14.1
=.
Toggle, Envlmnmantally sealed, General
MIL-G3965
10.13
f’q ~
for
~
(po”~*
Elti~
=b~~~
(No-lkf
B&~
TYP@ -~~
General
Speckatbn
for
Electrolyte), Tantalum, General
MIL+5015
15.1
~,
Eledrkal,
Spedflcation for
MIL-F-5372
22.1
I%aa, Currati Limiter Type, Amaft
MIL-R-5757
13.1
Relay. Electrbl (For Electronic and Communkation
General Specifbaticm for
MIL-R-6106
13.1
Circular Threaded, AN Type, General
Type Equipment),
Relay, Electromagnetic (Including Established Reliability(ER) Typs),
~-~s~
bnp,
for
Incandemt,
Aviation Service, General Raquirament for
MIL-L-6363
20.1
MIL-S-8805
14.1, 14.2
SwhcheS and Switch Assemblies, Swxdtivo and Push, (SW
for
General Sfx@in
MIL-S-8834
14.1
Switches, Toggle, Positive Brealq General Specification for
MlL-M-l 0304
18.1
Meter, Electkal Indicating, Panel Type, Ruggedzed,
Spedficatbn for
MlL-R-l 0509
9.2
MIL-C-1095O
10.8
General
for
Resistor, f%cad IWm (High Stability). General Speoikatbn
-Or,
Fud,
Mii
Action)
Dielectric, Button Style, General Specifiiion
for
MIL-C-1101S
M!L-GI
10.10
~,
~bn
FU~, Ceramic Dtiric
for
(General Pupae),
Fixed, Glass Dlelectrb, General Spcfkatbn
Ganeral
1272
10.9
Capadtor,
MlL-C-l 1693
10.2
Capadtor, Feed Through. Radio Interference Reduction AC
.
Sdedh
Metal Casos)Eatabkhed
and No~
for
MaMfiio General Spdicatbn
l!!’!!’
MlL-R-l 1804
9.3
MIL-G12889
10.1
MIL-R-12934
9.10
Resistor, Freed, Film (Power Type), General Specifiin
for
-
andDC,
“ hed
for
“Cap&or,
By-Pa&: Radio - Interfermce Reduction, Paper Dielectdc,
AC d
DC, (Hermetbally Sealed in Metallk Casas), Ganeral
Spectficatbn for
Resistor, Variable, Wirewound, Preasion, General Specification for
2-2
r- . . .
–n
/
nv
-1
[1-/!1
, ---
--–
.uu
l--
,-- --------
—.
n
. ——.
ba
-
MIL-HDBK-217F
2.0
sPEcfFlcATloN
ML-C-141S7
REFERENCE
DOCUMENTS
SECTKMJ #
10s
~,
-d:
a
(papcurrent (Hermabd lySeabdin
@J-~ ~n
for
PI-tic) or mastic Dweot*
Direct
Refkwty,
Matal Cases) amMshed
MIL-G14409
10.17
~.
vSpac#ioatbn for
MIL-F-15160
22.1
Fuse, Instmnem
MK-C-IS305
11.2
Coil, Fixed and Vari*,
MfL-F-15733
21.1
FBtler,Rack
UL-GW312
10.4
~.
Dbbdrk,
~ibn
ML-F-13327
21.1
Pass, Band Pass, Band Suppression and Dual
Filter, High Pass, k
Funcknkg,
General Specdfiition for
MIL-R-16546
9.7
6.0
TyP, T“lar
Trimmer), GWWraI
Poww amf Telephone
Radio Frequency, General Specifiibn
Imarkmrux,
General SpecMin
for
for
-,
Metzdl&ed (Paper, Paper Plastic or Plastic Film)
Dkocl Cummt (Herrneticaliy sealed in Metal Cases), Gemral
for
Redstor, Freed, WWewound(Power Type, Chassis Mounted), General
Specificatbn
MIN-19500
(Pii
for
SomkOnductor Oevice, Geneml Specification for
MIL-R-19523
13.1
Relay, Contmi, Naval Ship&oard
ML-R-19M8
13.1
Roley, Tree, Delay, lherm~
ML-C-19978
10.3
~or,
Fmecf Plastic (or Paper-Plastic) Dielectric (Hermetically
Sealed m Metal, Cemmc or Glass Cases), EstafXished and
Noneatabiiahed ReGabilii, General Specifiicatbn for
MIL-T-21036
11.1
Transformer, Pulse, Low Power, General Specikatiin
MUA-21097
15.2
General Specifiition
for
for
Connector, Electrical, Printed WInng Board, General Purpose, General
Spedfbatbn for
MIL-FM2097
9.13
Rasistor, VarMMe, Nonwirewound (AdjustmentTypes), General
Spedfbatbn for
MIL-R-Z?664
9.2
MIL-S-2271O
14.4
S*.
-nerd
ML-S-22665
14.1
Switches, Pushbutton, Illuminated, General Specification for
MIL-C-22W2
1s.1
Connector, Cyfinddcal, Heavy Outy, General Specification for
ML+163
10.19
Resistor, F&d,
=
Mary
~*
~~
Film, lnsdated,
General Specifiiion
(Printed Circuit), (Tlwmbwheel.
ofi,v*.
M&GZ3269
10.9
em.
Fi~.
GSpeclkatbn
for
MIL-FW3265
9.1s
Reaiir,
V=xum
Diekrik
MI-*
Estiiiihed
for
In-1ine and Pushbutton),
General Specifiibn
Reliabllky, General
Variable, Nonwirewound, General Specificationfor
2-3
..
MIL-HDBK-217F
2.0
REFERENCE
SPECfFICATlON
DOCUMENTS
sEcTKm
MIL-F-23419
22.1
MIL-T-23648
9.8
MfL-G24308
15.1
#
Fuse, bstrumont
Type, Gonad
~km
for
Thormistw, (Tharmafly Sensitive Resistor), Insulated, Generaf
Spadfioatbn for
Connec40r, EPanel. Genoraf
Rectangular, Miniature Polatizad Shell, Rack and
Spodcatbn for
MIL-G25516
15.1
Cortnector, ~
-~~fof
MfL&+6482
15.1
Cormoctor, Efoctr&f (Circular. Minirdure, QuH kamnoc&
Environment Rl&ting)
ReU@ac&
and Plugs, General Spocik@ion
for
MN-R-27208
9.9
Resistor, VariaM,
Speciftiion
for
, Miniature, ~
Environment Resistant Type.
WKewound, (Lead Screw Actiied)
General
MIL-C-2f1748
15.1
Con-or,
Ebct~
Rectangular, Ra& and Panel, solder Type and
Crimp Type Contads, General Spacifiition
for
MIL-R-28750
13.2
Relay, Solid State, Ganeral Specification for
MfL-G288tM
15.1
Connector. E&ctric Rectangular, High Density, PoMzed Cantral
Ja&euww, Genoraf Spedficstion for, Inactive for New Designs
MIL-C-2884O
15.1
Conrmdor, ~
cimUlar Threaded, High Denaity, High Shock
Shipboard, Class D, General Spechation
for
MIL-hR851 O
5.0
M&oc5rcuits, Generaf Specificatii
MIL-H-38S34
5.0
Hybrid Microcircuits, General Specification for
MIL-I-38535
5.0
Integrated Circuits (Microcircuits) Manufacturing, General
Speclfiiion
for
MIL-C-38999
15.1
Qxvwc#or, E~
Chcular, Miniature, Hgh Density, Quick
Disconnect, (Bayonet, Threadad, and Breech Coupiing) Environment
Resistant Remowble Crimp and Hermetic Solder Cmtacts, General
Specifiiion
for
MfL-C-39001
10.7
qor.
~~,
Mh
Specification for
MIL-R-39002
9.11
Raa&stor, Variable, Wkewound, Sem&Precision, General Spa&icstion
for
MfL—G39003
MIL-R~
10.12
-’
‘a_~&*ewg
9.5
Raslatcx, Fixed, ~nd,
Specification for ‘
MtL+39006
10.13
-N.
~~.
-I&
EstalMshed Relilii,
MfL-Raoo7
9.6
Resistor, Fixed, W~
General Speckition
Dkktk
for
Estabkhed ReliaMfity, Generat
T-lJm*
●
(Aaamte)
EstaMshed
Fteflabllity, General
(NortsoMf Ek%rolyte) Tantalum
for
General SpadkMon
nd (Power Type) EstaMished Reliability.
.
for
-
“- -
..
.-. .
.
..
..
MIL-HDBK-217F
2.0
SPEOFICATR3N
MIL-R~
REFERENCE
DOCUMENTS
SECTION #
9.1
Redstor, Fixed, Campoah“ n, (Insutated) Established Reliability,
Genefal S@fio@hfor
9.7
R@!sMcw,m
~nd
(Power Type, chassis Mounted)
EstaMished R@aMfity, General SpecMcMion for
MLC-3901O
11.2
Cd, Fbrti
Spec#iibn
MIL-CX9012
15.1
Connector, Coaxial, Racfb Frequency, General Spdfii”~
UL-C39014
10.10
MK-C49015
9.9
MIL-R39016
13.1
Radio Frequency, Molded. Established Ratiiity,
for
~
General
for
~.
~
Carandc Dielectric (General purpose) EsMMbhd
R8iiabili!y, Gmeral SpeoWation for
WkewOund (Lead screw Actuated) Emabfished
Rdetor, V*,
Reliability, General Spdfkatbn for
Relay, Electromagnetic, Established ReIiabilii,
General Specifiition
for
MtL-R-39017
9.2
Resietor, Freed, Fh
Specifiikm
(insulated), Estabkhed Reliabitky, General
for
Capacitor. f%ed, Ebctmlytio (Aluminum Oxide) Established Reliabil.~
and Nonestablished ReKaMIity, General SpecdfbNion for
MIL-G39018
10.14
MIL-C-39019
14.5
Cfrcutt Breakera, Magn@iq Low Power, Sealed, Trip%ee,
~bn
for
MIL-G39022
10.4
~r,
~d.
Mettiized Paper, Paper-Plastic Film, or Plastic Film
Dielectric, Direct and Alternating Current (Hermetically Sealed m Metal
Caaas) Estabfbhed Reliability, General Specification for
MIL-R-39023
9.15
Resistor, Varkble,
MIL-R-39035
9.13
Resistor, Variable,Nonwhwound, (Adjustment Type) Established
Reliability, General Spedkttbn for
MiL-G49142
15.1
Conne@or, Triaxial, RF, General Specification for
MIL-P-5511O
152
PrintedWdng Boards
General
Nonwirewound, Precision, General Specification for
Reliabilii,
General Specification for
MIL-R-65W2
9.2
MIL-G55235
15.1
Connector. Coaxial, RF, General Specif”=tion for
MIL-G55302
15.2
Connector, Printed Circuit, Subassembly and Accessories
MIL—G65339
15.1
Adapter, CoaJC~ RF, General SpeMc8tbn for
MIL-G65514
10.5
qor.
~~,
,~k
(CWM@tdfizd Plastic) Dielectric, Direct
Current In Non-Metal Cases, General Spedfii”bn
for
MIL-C-5S629
14.5
Circuit Breaker, Magnetic, Unsealed, Trip-Free, General Specification
for
MIL-T-S5631
11.1
Transformer, Intormdiato Ftewemx,
Radio Frequency, and
Discriminator, General Specific&lon”for
.
-
Resbtor,F~~EstddWd
------
MIL-HDBK-2 17F
2.0
REFERENCE
DOCUMENTS
SECTION#
SPECIFICATION
ML-C-55681
10.11
~r,
Rewility,
MIL-(X3383
Established
Conne,
Ekc&icaf, Circular, High Demity, Quiok Dmnect,
Envhonment Resisting, and Acc=swies, General SpecHMh
15.1
MlL~1511
Chip. M@t@lebayer, Freed, Ceramic Diekct~
General Sp&iGat”m for
for
Circ@i6reaker, Remote ~ntrol, Thermaf, TripFree. General
SpecMiion for
14.5
MtL-R-S3401
9.4
MiL-G83421
10.6
~r,
f%cf Supennetallizodf%stb f% DiskcMc(DC, ACor DC
Soalecf in Metal Cases, ~bhed
Refiabiiity,
and AC) Hmwtb#y
ud~~
MIL-C-83513
15.1
Cwmecbr, EkcZrical, Rectangular, Mbrominiaturo,
Garbefal Specification for
ML-C-83723
15.1
Connedor, Ebctricd (Circular Environment Resisting), Receptacles
and Plugs, GeneraJ Speclficatbn for
MIL-R=72s
13.1
Relay, Vacuum, GoneraI Specification for
Resbtor Notwodq Fixu!, Fti.
Ganwal Spdkabn
for
Polarized Shell.
MIL-R-63726
13.1, 13.2,
13.3
MILoS-83nl
14.1
Switch, Toggle, Unsealed and Sealed Toggle, Ganeral Specifiin
MN-C-83733
15.1
Conmw%x, Ebc!dc@, Miniature, Rectangular Type, Rack to Panel,
Relay, lime Delay, Elec!ric and Electronic, General Specifiiion
for
for
EnvironmentResisting,200 Degraas C Tcxal ContinuousOpOfa@J
Temperature, General Spedcatbn
MIL-S43734
socket
15.3
Pl@n
for
Electronic Components, General Specifiikm
for
STANDARD
MIL-STD-756
Rehbility
MIL-STD-883
Test Mathods and Prmxdures for Microelectronics
Mk4TD-975
NASA Star#ad E&trid.
MIL=WD-1!547
Pmt8, Matwials ●nd Procasses fof Spaco Launch Veh&k8,
Requirements for
MtL-Sl’D-1~
~
Modeling and Prec&tbn
Efactronic
and EbctmmachanbalPartsLkt
TechnioaI
Requtrwnents ?orHyMd Mcrockufl FacflltWJand Unes
copies of specImat&ns and Stmdads required by contractors in comectbn with spcific acquisition
functbns should be oMlnad fmrn the contracting activityor as directed by the a)ntracting offiir. ~ngle
_
- ako available(withoutcharu8)uponwrfttenrequest
I to:
StandwdizatbnDocumentOrderDesk
700 Robins Ave.
Building 4, Seotion D
Philadelphia,
PA 19111-5094
(216) 697-2867
2-6
W
-----
—- — ~_––
“.
v.,
.
.
~“.-y..,-..--
“,.
-
. . -----
/
MIL-HDBK-217F
I
3.0
INTRODUCTION
I
I
Rellablllty Englneerlng - Reliability k currently recognized as an essential need in miIitary
3.1
ebctronic systems. It is looked upon as a means for -cing
costs fmm the factory, where rework of
debotive cxmpcments adds a mn-proddve
overhead expense, to the field, where repak costs Inotude
not onty pa~ and labor but also transportation and storage. More knportantly, reliabilitydirectly inpacts
force effectiveness, measured In terms of availability or sortie rates, and determines the stze of the
“bgistics w inhibitingforce utilization.
The achievement of reliability is the fumtbn of refiabifity engineering. Every aspect of an eleotrodc
system, from the purtty of matertals used in fts oomponent devices to the operatots Inteflaoe, has an
impact on reliability. RelMWty engineering must, therefore, be appbd throughout the system’s
development in a dillgent and timely fashion, and integmted wfth other engbewhg disoi@nes.
A variety of reliability engineedng tools have been developed.
supportinga basic tool, reliabilitypredctbn.
This handbook provides the models
The Role of Reflablllty Prediction - Reliability predictbn provides the quantitative baseline
needed to assess progress in reliabWty engineering. A prediction made of a proposed design may be
3.2
used in several ways.
A characteristic
of Computer Aided Design is the ability to rapidly generate alternative solutions to a
particular problem. Reliability pmdiibns
for each design alternative provide one measure of relative worth
which, mrWned with other considerations, will aid in selecting the best of the available options.
Once a design is selected, the reliabilii predktii nwiybe used as a @de to Iwpmvement by showing
the hphest contdbutorsto faifure. If the pwt stress analysis method is used, it may also rewaf other Wtful
areas for change (e.g., over stressed parts).
The Impact of proposed design changes on reliabilityoan be detemnktedonly by comparfng the reliatMty
predictions of the existing and proposed designs.
The ablltty of the design to maintain an accepable reliability level under environmental extremes may be
the need for
The predctkms
may be used to evafuate
assessed through reHaMty
pmdictbns.
erwtronmental control systems.
The effects of complexity on the probability of mission success can be evaluated through reliability
predictions. The need for redundant or baok-up systems may be determined with the aid of reliability
predictions. A tradeoff of redundancy against other reliability enhancing techniques (e.g.: more oooling,
higher part quality, etc.) must be based on reliability predictions coupled wfth other pertinent
considerations such as cost, spaoe limitations, eto.
The predbtbn will also he~ evahwte the s@fficance of reportscf fallume. For exa@e,
if emmml falkrres
of one type or oo~nent
occur In a system the predkted faliure rate can be used to determine whether
the number of failures Is commensurate with the number of components used in the system, or, that it
indicates a pmbbm area.
Finally, reliability predictbns are useful to varbus other engineering analyses. As examples, the location
of txdtt-h-test circuitry 6houfd be influenced by the predicted failure rates of the chwltry monftored, and
malntenanoe strategy plannem can make use of the relative pmbabifhy of a failure’s location, based on
predictions, to minimize downtime. Reliability predbtbrts are also used to evaluate the probabilities of
fajlure events described in a failure modes, effeots and criticalityanalysis (FMECAS).
3-1
—----
-—e
--
*
—e–-m—~+
———__
... ... . .. ____.=----
-
— — .
MIL-HDBK-217F
3.0
INTRODUCTION
Limitations of Rellabiltty Prodktions - This handbook provides a common basis for
reliability predictbns, based on anatysis of the best available data at the the of Issue. It Is interded to
make reliability prediction as good a tool as possble. However, like any tool, reliabilii predktbn rrust be
3.3
used htefiigently,withdue oonskferat)onof its MnWions.
The first limitation is that the failure rate models are point estimates which are based on available data.
Hence, they are valii for the condltbns under which the data was obtained, and for the devkes oovered.
Some extrapolation during model development is possible, but the inherently empirical nature of the
models can be severely restrictive. For exanple, none of the models m this handbook predict nuclear
suMvability or the effects of bnizing radiatbri.
Even when used in similar environmetis, the differences between system appliiions can be significant.
Pmdkted and aohleved rWaMlty have atways been doaer for ground electronic systems than for avbnk
systems, because the environmental stresses vary fess from system to system on the ground and hence
the field cor@tbns are In general cbser to the environment under which the data was oo#e@edfor the
prediction model.
However, failure rates are also impacted by operational scenartos, operator
characteristics, maintenance -s,
measummmt ~es
and dtlfe~~s
In deftnftbn of falfure.
Hence, a rellablflty predktlon should never be assumed to represent the expected field reliability as
Mean-Tirne-Between-Removak, etc.).
measured by the user (i.e., Mean-The-Between-Maintenance,
This does not negate its value as a reliability engineering tool; note that none of the applications
discussed above requires the predicted reliability to match the field measurement.
Electronic technology is noted for its dynamk nature. New types of devices and new processes are
oontjnually introduced, compounding the difficultiesof predkting reliability. Evolutbnary changes may be
handled by extmpolatbn from the existing models; revolutionarychanges may defy analysis.
Another Ilrnitatbn of retiablltty predktbns is the mechanks
method re@res a signlfkant afmmt of design detail. mk
of the process. The part stress analysis
naturalty knposes a time and cost permtty.
More signiiioantly, many of the detatts are not avaitab+ein the earty des~
stages. For thts reason rn!s
handbook contains both the part stress anatysts method (Sectbns 5 through 23) and a simpler parts count
method (Appendix A) which oan be used in early design and bid formulatbn stages.
Finally, a basic limitation of reliability prediction is its dependence on correct application by the user.
Those who correctly apply the models and use the information in a conscientious reliability program will
find the predktbn a useful tool. Those who V&Wthe prediction only as a number whkh must exceed a
specifiedvalue can usualty find a way to achievetheir ~at without any ion the system.
3.4
Part
Stress
Analysls
Predlctlon
Appltcabllfty - Th&smethod is applicable when most of the design is completed and a detailed
pads list incbding part stresses Is available. ft can also be used during later design phases for rel&bility
trade-offs vs. patl selection and stresses. Sections 5 through 23 contain failure rate models for a broad
variety d parts used in ekmtrmb equipment. The parts we grouped by major categories and, where
appropriate, are subgrouped within oategorfes. For mechanical and electromechanical pats not covered
3.4.1
by this Handbook, refer to Bibfbgraphy ftems 20 and 36 (Appendix C).
The failure rates presented appty to equipment under normal operating conditbns, Le., with power on and
performingIts intended functbns in Its ~ended environment. Extrapolationof any of the base faihn rate
models beyond the tabulated vahJessuch as high or subzero temperature, electrical stress values above
1.0, or extrapolation of any associated model modifiers is oompletety invalid. Base failure rates can be
interpolated between electrical stress values from O to 1 using the underlying equations.
The general procedure for determining a board level (or system level) failure rate is to sum individually
calculated failure rates for each oomponent. This summation is then added to a failure rate for the citcuit
board (which includes the effects of solderfng parts to tt) using Section 16, Interconnection Assemblies.
3-2
MIL-HDBK-217F
INTRODUCTION
3.0
For parts or wires soldered together (e.g., a jumper wire between two parts), the connections model
appearing in Section 17 is used. Finaliy, the effects of connecting circuit boards together is accounted for
by adding in a faiiure rate for each connector (Section 15, Connectors). The wire between connectors is
assumed to have a zem failure rate. For various sewice use profiles, duty cycles and redundandes the
procedures described in MIL-STD-756, Reliability Modeling and Prediction, should be used to determine
an effective system ievel faiiure rate.
3.4.2
Part Qualtty - rne~~of
apmh~am
effti~ti
pm fdhmratea~~mlntb
part models as a factor, *Q. Many parts am covered by spedfbations that have several quaffty levels,
hence, the part models have vaiues of XQ that am keyed to these qu~~
leve~=
Such Pafis w~h their
quality designetora are shown h Table 3-1. The detdled requirements for these levels are ciearty defhed
in the applicable specffkation, except for mkrockcuits.
depenckht on the ~mber
of MIL-STD-683
TatNe 3-1:
w
was
Mkmimfis
screens (or equivalent) to whii
Parts With Multl-Level
have qualhY levels which are
they are subjected.
Qua!lty Speclflcatlons
Uvumwa
E
7
UWw.
Microcimuits
S, B, B-1, Othec ~aliiy
Screening Level
Discrete Semiconductors
JANTXV, JANTX, JAN
Capacitors, Established
Reiiabiiii (ER)
D, C, S, R, B, P, M, L
Resistors, Established
Reliablllty (ER)
S, R, P, M
Coils, Molded, R. F.,
ReiiabUty (ER)
S, R, P, M
Relays, Established
Reliabiiily (ER)
R, P, M, L
r.q.
. .
. .
.
I
-
Judged by
Some Mrts are covered by older specifications, usualty referred to as Nonestablished
that &“ not have rnutti-levels of qu~i.
These part rn&fels generally have two qualfty
‘MIL-SPEC.-,
and “Lower”.
If the part is procured in complete accordance
specification, the ZQ value for MIL-SPEC should be used. If any requirements
Reliability (Non-ER),
levels d&i@ated &
with the applicable
are waived, or if a
commercial part is procured, the XQ value for Lower should be used.
The foregoing discussion involves the ‘as procured” part quality. Poor equipment design, production,
and testing facilities can degrade pad quality. The use of the higher quality parts requires a total
W?U@M~ de$~ ~ W~
COtid process co-~rate
with the high part quality. it wouid make iiile
sense to procure high quality parts on!y to have the equ”qmentproduction procedures damage the paftS
or introduce latent defects. Total equipment program descriptions as they might vary with different part
quality mixes is beyond the scope of this Handbook. Reliability management and quality control
procedures are described in other DoD standards and publications.
Nevertheless, when a proposed
equipment development
is pushing the state-of-the-art
and has a high reliability requirement
necessitating high quality pans, the ~
equipment program should be given careful scrutiny and not just
3-3
I
MIL-HDBK-217F
I
INTRODUCTION
3.0
—
the parts quafhy. Otherwise, the bw failure rates as predicted by the models for hgh quality parts will not
be realized.
3.4.3
models
h@lJde
the
Uee Environment - N Dart reliabm
through the environmental factor,- %Er except ~orthe effects of bn~
of envkorlmental Streeses
@~~.
The dem~b~
of
effeots
these envhunentsareshownin TaMe3-2.
The~fac!or
isqxmtfWdwithfn eachpartfaiUre rat8rnod8l.
These environments encorrpass the major areas of equprnent use. Some eqJ@ent wlfl experience
h such a case, the
more than one environrrwnt during its normal use, e.g., equipment in spacecraft.
reliabitii analysis should be segmented, namely, missile launch (ML) conditions during boost into and
returnfromo~
and space flight(SF) while
Table 3-2:
in orbft.
Envhomnental
Symbol
and Deacrlptlon
EqtJhratBnt
Environment
Ground, Bengn
~
Symbol
GB
MIL-HDBK-217E,
Notice 1
~ symbol
GB
%S
Nonmobile, temperature and humidity
controlled environments readily accessitde to
maintenance; includes laboratory instruments
and test equipment, medical electronic
equipment, businass and scientifc computer
mmplexes, and missiles and support
equipment in ground sibs.
Ground, Fixed
GF
%
Moderately amtrolied environments such as
installation in permanent racks with adequate
oooling air and possible installation m unheated
buildings; includes permanent tnstattatton of air
traffic control radar and communications
facilities.
Ground, MoMle
GM
GM
Equipment installed on wheeled or tradwd
vehicles and equipment manually transported;
includes ttiicai missile ground support
equipment, mobile communication equipment,
tactical fire direction systems, handheld
=mmunications equipment, laser designations
and range finders.
Mp
Naval, Shelterad
NS
NS
‘SB
Naval, Unsheltered
Nu
%
NW
NH
3-4
D-ription
Includes shehered or bebw deck conditions on
surface ships and equipmant installed in
submarines.
Unprotected surface ahipborne equipment
exposed to weather conditions and equipment
immersed in salt water. Includes sonar
$@pment and equipment installed on hydrofoil
vessels.
I
.4-..-.
.
.
.
.
.,
,.,
,.,
.
.
.
I
.,
. .. . . . .
..,..
. . .
.
!.
.
.
...”
.
.
.
..,.
MIL-HDBK-217F
3.0
Environmental
Tabto 3-2:
Symbol
and Deecrtptlon
INTRODUCTION
(CXMWd)
E@valont
Description
Environment
%E
Airborne, Inhabitsd,
symbol
AK
‘tc
Am
*IB
Typical conditbns in cargo compartments
whbhcan beoaX@adby
arlahcraw.
Envlronmont axhmes d ~~U~,
~u~,sand vibration W. minimal.
Examplas Inctuda bng mission akcraftsuchas
thac130,c5, B!52andc141.
Thisoatagory
aboappueata
~edaroasinbwu
performance smaller aircraft such as the T38.
Airborne, Inhabited,
Fighter
‘IF
‘IF
Same as NC but installed on high performance
‘IA
aircraft such as fighters and interceptors.
Examples include the F15, F16, F1 11, F/A 18
and Al O aircraft.
Airborne, Uninhabited,
%C
Am
+
%JB
Environmentally uncontdbd
areas which
oannot be rnhdited by an aircrww during flight.
Environmental extrernos of pressure,
tefnperature and shock maybe severe.
Examples include uninhabited araas of bng
missiin ahwaft such as the C130, C5, B52 and
C141. This category aiso appJiis to
uninhabited area of bwer performance smaller
aircraft such as the T38.
Airborne,
Uninhabited,
Fighter
Same as NC but installed on high performanem
aircraft such as f~htem and interceptors.
Exarnplesincludethe F15, F16, F111 and AlO
AUF
aircraft.
Airborne, Rotary
w-
Space, Flight
ARvv
SF
%/
Equipment installed on helicopters. Ap@h to
both internally and externallymounted
squipmentsuch as laser designators, fire
mntrol systems, and communications
squ”pment.
---
APP=J—
~mw9~~~
cmditions. Vehicle neither underpowered
flight nor in atmosphorio reentry; includes
satellites and shuttles.
3-5
I
I
I
MIL-HDBK-217F
3.0
INTRODUCTION
—
Table
3-2:
Environmental
Symbol
and
Descrfptlon
Equivabnt
MIL+fDBK-217E,
Mice 1
~ Symbol
Environment
(cent’d)
Description
~E Symbol
Missile, Flight
Conditions r.lated to poweredflightof air
breathing missibs, cruise missiles, and
missiles in unpowered free flight.
%
+
4A
Miiile,
Launch
Cannon, Launch
%
\
u=
CL
CL
Severe amditions relatwi to missile launch (air,
ground and Sea), space Vshiob boost into
orbit, and vehicle re+n~
and landing by
par~e.
Also applies to soI&l roclwt motor
ww~bn
POWW@ fhght, and torpedo and
missile launch from submarines.
Extremely severe conditions related to cannon
launching of 155 mm. and 5 inch guided
projectiles. Conditions apply to the projectile
trom launch to target impact.
3.4.4
Part Failure Rate Models - Part failure rate models for microelectronic parts are significantly
different fmm those for other parts and are presented entirely in Section 5.0. A ~pical example of the
type of model used for most other part types is the folbwing one for discrete semiconductors:
~=~fiTfiA~R~S~C~Q~E
is the patt failure rate,
is the base failure rate usually
expressed
by a model relating the influence of electrical and
temperature stresses on the part,
and the other n factors modify the base failure rate for the category
eppkath
of environmental
amf other parameters that affectthe paft reKMity.
me ZE and XQfaotors are used in most ali models and other x factom app~ only to SWC~~ ~dels.
The
applicability of z factors is Identified in each sectbn.
The base failure rate (~)
models are presented
in each part section along with identification of the
applicable model factors. Tables of calculated ~ values are also provided for use in manual
calculations.
The model equations can, of course, be incmporated into computer programs for machine processing.
The tabulated values of ~ are cut off at the part ratings with regard to temperature and stress, hence, use
of parts beyond these cut off points will
3-6
overstress tk pan. The use of the lb models in a ~mPuter
MIL-HDBK-217F
.
3.0
pmgrarn should take the part rating limits into account.
The ~
equations are
INTRODUCTION
mathematically continuous
beyond the part ratings but such faiiure rate vaiues are invalii in the overstressed regions.
Aii the part modeis imiude faiiure data from both cahstmphic
and permanent drift failures (e.g., a resistor
permanently falling out of rated tolerance bounds) and are based upon a constant failure rate, except for
motors whch show an increasing failure rate overtime.
FaiJures associated with connection of parts into
circuit asserrbiies are not imluded within the part faiiure rate models. Information on cxmnection reliabilii
is provided in Sections 16 and 17.
- The use of this prediction method requires the determinatbn
of the
3.4.5
Thermal
Aspects
temperatures to which the parts are subjected.
Sinoe parts reliability is sensftive to temperature, the
thermal anatysis of any design shouid fairty accurately provide the ambient temperatures needed in using
the part models. Of course, bwer temperatures produce better reliihty
but aiso can pmc&ce hcreased
penatties in terms of added toads on the environmental oontrol system, unless achkved
through
improved thenmal design of the equipment. The thermal analysis shouid be part of the design process
and included in ail the trade-off studies covering equipment performance, reliability, weight, volume,
environmental control systems, etc. References 17 and 34 listed in Appendix C may be used as guides in
determining component temperatures.
3-7
[
,,.,.... .
I
,., ,.
,..
.
...
.,.
...!
,.-
.
.
.
.
I
MIL -HDBK-217F
4.0
RELIABILITY
ANALYSIS
EVALUATION
.
“ for evaluating a reliability predii
report.
Tabie 4-1 provides a ~
For completeness, the cttecfdist includes categories for refiabiiity modeling and albcatbn,
which are
sometimes deiivered as part of a predctibn report. it should be noted that the scope of any reliability
analysis depends on the specific requirements called out in a statement-of-work
(SOW) or system
k not intended to change the soope of these requirements.
speckatbn.
The inclusion of this ckkiist
Tabl.
Malor
COncarns
—--—-— --—-. --—
4-1:
Reliablllty
MODELS
Are allfunctional elements included in the
raliabiihybbdc diagram /model?
Are all modes of operation considered in the
nlti
modd?
Do the math model results show that the design
achieves the reliabiiii requirement?
ALLOCATION
Are system reliability requirements allocated
(suMivided) to useful levels?
Does the allocation process consider
;am~:;?ty, design flexibility, and safety
m
PREDICTION
Does the sum of the parts equal the value of
the module or unit?
m
Anatysls
Checkltet
Commonts
—
. . . ..-
System design drawingddiagrarna must be rwiewed to
be sure that the relkbilii modekfkgram qreoa with tho
hardwn.
~
@OS, an~ae
paths, degraded conditbns and
redundant units must bedefinedandmodeted.
Unit failure rates and redundancy aquations are used
from the detailed paft predictions in the system math
model (See MIL-STD-756, Reliability Predictbn and
Modeiing).
Useful Ievets are defined as: equipment for
sulxxmtractors, assemblies for sub-subcontractors,
arouit boards for designers.
Conservative values are needed to prevent reallocation
at every desgn change.
Many predictbns neglect to include all the parts producing
optimistic results (check for solder connections,
connectors, circuit boards).
Are environmental ccmdit”mnsand part quality
representative of the requirements?
Optimistic quality levels and favorable environmental
cxmditions are often assumed causing optimistic resutts.
Are the circuit and part temperatures defined
and do they represent the design?
Temperature is the biggest driver of part failure rates;
bw temperature assumptions will cause optimistic
results.
Are equ~ment, assembly, subassembly and
part reliability drivers identified?
Idontifioation is needed so that corrective actions for
reliabitii improvement can be considered.
Are alternate (Non MIL-HDBK-217) failure rates
highlighted along with the rationale for their
use?
Use of alternate failure rates, if deemed necessary,
require submission of backup data to provide credence in
the values.
Is the level of detail for the part failure rate
models sufficient to reconstruct the result?
Aro critical components such as VHSIC,
Monolithic Microwave Integrated Circuits
(MMIC), Application Specific Integrated
Circuits (ASIC) or Hybrids highlighted?
Each component type should be sampled and failure
rates completely reconstructed for accuracy.
Prediction methods for advanced technobgy parts should
be oarefully evaluated for imp-on
the module and
system.
I
I
4-1
.
.
MIL-HDBK-217F
5.0
MICROCIRCUITS,
INTRODUCTION
This section presents failure rate prediction models for the following ten mapr classes of microelectronic
devices:
Swis2rl
5.1
Monolithic Bipolar Digital and Linear Gate/LogicArray Devices
5.1
Monolithic MOS Digital and Linear Gate/Logic Array Devices
5.1
Monolithic Bipolar and MOS Digiial Microprocessor Devices
5.2
Monolithic B~lar
5.3
Very High Speed Integrated Chcuit (VHSIC/VHSIC-Like
Gates)
5.4
Monolithic
5.4
Monolithic GaAs MMIC
5.5
Hybrid Microcircuits
5.6
Surface
5.7
Magnetic Bubble Memories
and MOSMemoryDevices
and VLSI) CMOS Devioes (> 60K
GaAs Digital Devices
Acoustic Wave
Devices
In the title description of each monolithic device type, Bipolar represents all llL,
ASITL,
DTL, ECL, CML,
ALSITL, HTTL, Fl_ll, F, L~L, SITL, BiCMOS, LSITL, IIL, 13L and ISL devices, MOS represents all
metal-oxide microcimuits, which includes NMOS, PMOS, CMOS and MNOS fabricated on various
substrates such as sapphire, poiycrystaftine or single crystai siiicon. The hybrid model is structured to
accommodate aii of the monolithic chip device types and various complex”~ Ieveis.
Monolithic memory complexity factors are expressed in the number of bits in accordance with JEDEC STD
21A. This standard, which is used by ail government and industry agencies that deal with microcircuit
memories, states that memories of 1024 bits and greater shall be expressed as K bts, where 1K = 1024
bits. For example, a 16K memory has 16,364 bits, a 64K memory has 65,536 bits and a 1M merno~ has
1,048,576
bits. Exact nurrbers of bits are not used for memories of 1024 bits and greater.
For devices having both linear and digital functions not covered by MIL-M-3651 O or MIL4-38535, use the
iinear modei. Line drivers and iine receivers are considered iinear devices. For iinear devices not covered
by MIL-M-3851 O or MiL-i-38535, use the transistor count from the schematic diagram of the devioe to
determine circuit complexity.
For digitai devices not covered by MIL-M-3851 O or MIL-I-38535, use the gate count as determined from
the logic diagram. A J-K or R-S flip fbp is equivalent to 6 gates when used as part of an LSi circuit. For the
putpose of this Handbook, a Oate is constierecf to be any one of the following functions; AND, OR,
exciusive OR, NAND, NOR and inverter. When a bgic diagram is unavailable, use dev.ke transistor count
to determine gate count using the folbwing expressions:
Bipolar
CMOS
Al! other MOS except CMOS
No. Gates = No. Transistors/3.0
No. Gafes = No. Transistors/4.O
No. Gates = No. Transistors/3.O
5-1
MIL-HDBK-217F
5.0
MICROCIRCUKS,
INTRODUCTION
A detailed form of the Section 5.3 VHSIC/VHSIGLikemodel is inoluded as Appendix B to allow more
detailed WleWfs to be performed. Reference 30 should be consulted for more information about this
model.
Reference 32 should be consulted for more Informatbn about the models appeartngin Sections5.1,5.2,
5.4,5.5. and 5.6. Reference 13 should be consulted for additional information on Section s.7.
MIL-HDBK-217F
5.1
GATE/LOGJC
MICROCIRCUITS,
ARRAYS
AND
MICROPROCESSORS
DESCRIPTION
1. Bipolar Devices, Digital arxf Linear Gate/Logic Arrays
2. MOS Devices, Di@tal and Linear Gate/Logio Arrays
ArTay (~)
am
3. F*H PmgranwwMe Lx
Programmable Array Logic (PAL)
4. Microprwessors
(ClZT + C2Y@ ~
~=
Hgml,ar Di@al and Linear GafeA@c
DighJ
No. Gates
1 to
101 to
1,001
to
3,001
to
10,001
to
30,001
to
100
1,000
3,000
10,000
30,000
60,000
~
1
to
101 to
301
1,001
to
to
100
300
1,000
10,000
I
c.
.020
.040
.060
Linear
No. Transistors
c,
100
1,000
3,000
10,000
30,000
.010
.020
.040
.080
.16
.29
ltol
c,
.010
.020
.040
.060
to 60,000
●NOTE:
For CMOS gate counts above 60,000 use the V1-iSIC/VHSIC-Like
101 to
301
1,001
Die Complexity Failure Rate - Cl
Up to 8
Upto 16
up to 32
PLA/PAL
No. Gates
.010
1
101
1,001
3,001
10,001
30,001
No. Bits
Failure Rate-Cl
c,
up to 200
201
1,001
.010
.021
.042
to 1,000
to 5,000
D@al and Linear Gate/Logic Army Die CorqSexlty Failure Rate - Cl”
DQital
No. Gates
to
to
to
to
to
c.
.0025
.0050
.010
.020
.040
.080
Amy Die Cm@exity
Linear
No. Transkws
I
[
Fdlures/106 t+ours
to
to
3
1,0
10,0
I
PLNPAL
No. Gates
up to 500
501 to 1,000
2,001 to 5,000
5,001 to 20,000
c,
.00085
.0017
.0034
.0068
model in Section 5.3
All Other Model Parameters
Parameter
Refer to
Bipolar
MOS
c,
c,
Section 5.8
.060
.~4
Section 5.9
.12
.28
Section 5.10
.24
.56
II
5-3
..
.
MIL-HDBK-217F
.
●
5.2
MICROCIRCUITS,
MEMORIES
DESCFilPTION
1. Red ~
Memories (ROM)
2. ~armable
Read Only Memorns (PROM)
3. lJ~
mPROMS (UVEPROM)
4. “Flash; MNOS and Floating Gate ElectdcaBy
bOkJdf3S both
Erasable PROMS (EEPROM).
fbating gate tunnel oxide (FLOTOX) and textured
polysiliin type EEPROMS
5. Static Rancbm Access Mermles (SRAM)
6. ~
R~
/@cess Mwnories (DRAM)
~=
(C1 %T + C2 %E + ~
~
~
FailumsH06
HOtJm
Die Complexity Faih.JmRate -Cl
M
lar
>
PROM,
uvEPROM,
Memory Size, B (Bits)
ROM
.00065
.0013
.0026
.0052
up to 16K
16K<Bs64K
64K<Bs256K
256K<Bs1M
Al Factor for ~c
Total No. of
Programming
Cycles Over
EEPROM Life, C
z=’
.00085
.0017
.0034
.0068
SRAM
DRAM
(MOS &
BiMOS)
ROM,
PROM
SRAM
.0013
.0025
.0050
.010
.0078
.016
.031
.062
.0094
.019
.038
.075
.0052
.011
.021
.042
~
Cablatbn
Textured-
Flotox ‘
Polp
.00070
.0014
.0034
.0068
.020
.049
.10
.14
.20
.68
1.3
2.7
3.4
.0097
.014
.023
.033
.061
.14
.30
.30
.30
.30
.30
.30
.30
Factor for kc
I Total No. of Programming
Cycles Over EEPROM
Ltfe. C
Calculation
I
Textured-Poly
I
Up to 300K
up to 100
100< CS2OO
200< C<500
500< CS1K
1K<CS3K
3K<CS7K
7K<CS15K
15K < CS20K
2oK<csi30K
30K < CS lOOK
100K < CS200K
200K<CS400K
400K < C s 500K
1.
Al =6.817
x10+(C)
2.
No underlying equation for TexturedPoly.
o
300K < C s 400K
1.1
400K < C s 500K
2.3
AJl Other Mc
Parameter
IelParametem
Refer to
XT
Section 5.8
C*
Section 5.9
fiE,
~Qt
Section 5.10
XL
(EEPROMS
~c
Page 5-5
only)
~c
= O
For all other devices
5-4
.
.
A2
..
I
I
MIL-HDBK-217F
5.2
MICROCIRCUITS,
w,
-
~=o
All Memory Devices Except Fbtox and
Textured-Poly EEPROMS
Fbtox and Textured Poty EEPROMS
~[
c=
Al
61 +
A*B*
~
1
‘ECC
Al
P-54
P*
Page 54
B,
Page 5-6
Page 5-6
A2
A2=o
Page 5-5
02
~=o
P*
%Q
Sectbn
Error Correction Code (ECC) Optkms:
1. No On-Chip ECC
MEMORIES
5-6
Seotion 5.10
5.10
= 1.0
%ECC = ~.0
2. On-ChP Hamming Code
~ECC = .72
%ECC = .72
3. Two-Needs-One
~ECC = .68
~ECC = .66
~ECC
Redundant Cell Approach
NOTES:
1.
See Reference 24 for modeling off-chip error detect”on and correction
schemes at the memory system level.
2.
If EEPROM
3.
Error Correctbn Cde Optbns: Some EEPROM manufacturers have incorporated
on-chip error correction chxwitry into their EEPROM devioes. This is represented by
the on-chip hamming code entry. Other manufacturers have taken a redundant cell
-~
which immporates an extra storage transistor in every memory ceil. mis
is represented by the two-needs-cm
redndant cell entry.
4.
The Al and
type is unknown, assume Fbtox.
4
factors shown in Section 5.2 were devebped
based on an assumed
system life of 10,000 operating hours. For EEPROMS used h systems whh
significantly bnger or shorter expected lifetimes the Al and ~ factors should be
multiplied by:
10,000
System
Lifetime
Operating
Hours
5-5
MIL-HDBK-217F
5.2
MICROCIRCUITS,
MEMORIES
t
1
~
“Fa
x
co
x
*
8
m“
i
n
s
I
%6
===1
■
I
.—
,,
.. ,
.
MIL-HDBK-217F
5.3
MICROCIRCUITS,
VHSICNHSIGLIKE
AND
VLSI
CMOS
DESCRIPTION
CMOS greater than 60,000 gates
~
“ %@MFGfiPCD
+ ~pzEx@p~
Failurest106 HOUrS
+ ~~~
ANOther Model Parameters
Ok Base Falture Rate - ~D
I
Part Type
’60
Logic and Custom
0.16
me
0.24
Army
Parameter
*
Refer to
%T
Section 5.8
%E~~
Se@on
Correction Factor
Package Type
Manufaotwing
I
%FG
II
.55
Process
QML or QPL
Non QML or Non QPL
I
Hefmetc
DIP
Pn Grid Amy
CMp Carrier
(Surface Mount
2.0
- Xm
‘PT
Nm&mettc
I
Paokage Type
5.90
1.0
1.3
2.2
4.7
2.9
6.1
T@chnnlnnv\
Dle Complexity Correction Factor - ~D
I
I
Feature S&e
i
(Mkmns)
.80
1.00
1.25
I
As.4
8.0
5.2
I
[
I
I
A =
‘-f+)
[v
Die Ama (Cr#)
.7< AsI.O
1.0< As2.O
19
38
I
1
13
25
I
I
I
I
.4< As.7
14
8.9
‘:i+-M
1
2.0<
i
I
I
A s 3.0
58
37
Total Scrbed Chip Die Area in cm2
58
8“2
‘:’-’”a”sw;:bns)s)
Die Area Conversion: cm2 = MIL2 + 1S5,000
Package Base FaUure Rate - ~p
I
‘BP
24
28
40
44
48
52
64
84
120
124
144
220
.0026
.0027
.0029
ksp
NP
Ekctrical Overstress Faiture Rate - l~h~
Number of Pins
=
=
.0022+
((1 .72X
10-5)
Nu~r
of Package Pins
VTH (ESD %SC@bility
o-
.0030
.0030
.0031
.0033
.0036
.0043
.0043
.0047
.0060
~OS
(NP))
‘TH
(VOttS))*
.065
1000
>1000-2000
.053
>2000-4000
.044
>4000-
16000
.029
> 16000
●
1
UJCU7_n
‘EOS
- (-In (1 -.00057
.0027
exp(- .0002 Vw))
/.00876
= ESD Susceptibility (volts)
Voltage ranges which will cause the pad to
fail. If unknown, use O -1000 vofts.
U
Al
Q!
,.,
1
.-.
MIL-HDBK-217F
5.4
MICROCIRCUITS,
GaAs
MMIC
AND DIG~AL
DEVICES
DESCRIPTION
Ga)iiim Arsenide Microwave Monolithic Integrated Citwit
(GaIW MMIC) amt GaAs Digitai hltegrated Ci-ixhsUshg
MESF~ Transistorsand Gold Based MetaJliion
W
Die Complexity FaiWe Rates - Cl
(No.of
1.
Cl
Application
4.5
7.2
1 to 100
101 to 1000
accounts for the following active
elements:
..
c,
complexity
Elements)
%A
MMIC Devices
Low Noise & Low Power (S 100 mVV)
Drtvar& High Rnuer(> 100 mw)
Unknown
1.0
3.0
3.0
Digttal Devices
All Digital Applications
1.0
transistors, diodes.
<
-:
Die CompkIXRy Failure Rates - Cl
Complexity
(No. of Elements)
1 to 1000
1,001 to 10,000
1.
Cl
c,
25
51
aocounts tor the following aotive
elements:
All Other Model
Parameter
Parametem
Refer to
XT
Sectbn
5.8
C*
Section 5.9
transistors, diodes.
nE, XL,
5-8
I
~Q
Section 5.10
——
I
?
....
.,.
...
MIL-HDBK-217F
5.5
MICROCIRCUITS,
HYBRIDS
DESCRIPTION
Hybf@ MicrociruJits
+.2XE)ICF~Iy
~=[~Nc~l(l
FaMureM06Hours
Nc
=
Number of Each Particular Conpnent
kc
=
Failure Rate of Each Particular Corqmnent
The general pmcechme for developing an overall hybrid faikJm rate )s to oalculde an individual failure fate
for each component type used in the hybrid and then sum them. This summatbn is then modfied to
axoun
for the ovendl hybrid fumtiin (x#, suwning level (~), and matudty (~.
~
~
~
failure rate is a function of the active mmponent faiture modified by the environmental factor (i.e., (1 + .2
~E) ). Ow th ~~ne~
~
w~ in th fob~~
t8bk ar8 rnns~~
to ~nf~e
8@Wb~& ~
the overall failure rate of most hybrids. AU other cxxnponent types (e.g., m@stor& inductag et@ are
considered to contribute lnslgnffkanttyto the overalt hybridfailure rate, and are assumed to have a failure
rate of zero. This simplification is valid for most hybrids; however, if the hybrid consists of mostiy passive
components then a failure rate should be calculated for these devices. tf factorirm in othi?r comQonenf
.
types, assume ZQ = 1, ~ =1 and TA = Hybrid Case Temperature for these calculat b~s.
of&
Determination
Determine ~ for These
Handbook
Section
Mak~ These Asswptions
L
co mponent Types
Microcircuits
5
C2=0,
XQ=l ,1=
Section 5.12, ~P
Discrete Semiconductors
6
~
When Determining
1, TJ as Determined from
= O (for VHSIC).
= 1, TJ as Detemined
from Section
6.14,
%E=l.
Capacitors
10
~=1,
TA
= Hybrid Case Temperature,
~E=l.
NOTE:
If maximum rated stress for a die is unknown, assume the same as for a discretely pdie of the same type. If the same dw has several ratings based on the discrete ~
type, assume the bwest rating. Power rating used sh6uld be based on case terrper~ure
for discrete semiconductors.
Chcuit Function Factor -
All Other Hybrfd Model Parameters
F
Digital
Vii,
1.0
10MHz<f<l
Microwave,
f >1 G1-lz
Linear, f <10
Power
MHz
1
I
Circuit Type
GHz
I
~LI ~Q, ~E
I
Refer to Section 5.10
I
1.2
2.6
5.0
21
5-9
i
i
MIL-HDBK-217F
5.6
MICROCIRCUITS,
SAW DEVICES
DESCRIPTION
Surface Acoustic Wave Devices
$ = 2.1
IQ %E Fai)ures/106 Hours
Environmental
Quaiity Factor - ~
Screening Level
XQ
10TerTpf&mr’e Cycleal
(+5% to
.10
Factor - xcL
%E
Environment
.
+125°C) with end point electrical
tests at temperature extremes.
None beyond bestcwmmwkat
practices.
.5
%3
2.0
%
I
4.0
%
II
1.0
I
his
4.0
Nu
6.0
AC
4.0
5.0
‘IF
5.0
%c
8.0
‘UF
8.0
‘RW
.50
SF
5.0
MF
ML
12
CL
220
5-1o
1
I
El
I
.-—
I
MIL-HDBK-217F
5.7
MICROCIRCUITS,
MAGNETIC
The magnetic bubble memory device in its present form is a noMwnWic
folbwing two mapr structural segments:
BUBBLE
MEMORIES
assembty consisting of the
1.
A basic bubble chip or die consisting of memory or a storage area (e.g., an array of minor
hops), and required control and detection elements (e.g., generators, various gates and
detectors).
2.
A magnetic structure to provide controlled magnetic fields consisting of permanent
coils, and a housing.
.
magnets,
These two structural segments of the device are intemcmnected by a mechanical substrate and lead
frame. The interconnect substrate in the present technology is normally a printed cirwit bead.
tt shoukf
be noted that this model does not inohde external suppmt microelectronic devices reqJired for magnetk
bubble memory operation. The model is based on Reference 33. The general form of the fakwe rate
model is:
~=
~1 + ~
FaiJurest106 Hours
where:
k, = Failure Rate of the Control and Detection Structure
~ = Failure Rate of the Memory Storage Area
ctips per Package - NR
Nc
=
Device Complexity Failure Rates for Control and
Detectbn Stmcture - Cl, and C,l
Number of Bubble Chips per
c,, =
Packaged Device
Temperature
~T=(.l)@xp
[ 8.63
Factor - XT
-Ea
X
1
10-5
(
1
TJ +273-=
)1
C2,
-
.0001 (N1)”226
N,
=
Number of Dissipative Elements
on a Chip (gates, detectors,
generators, etc.), N, $1000
Use:
=
.8 to Caloulate ?tTl
Ea
=
.55 to Calotdate *T2
TJ
=
Junction Temperature
%
(°C),
25 STJS175
TJ
t
w
m
.
.00095( N1)”40
TCASE + IO”C
m
u
MIL-HDBK-217F
MICROCIRCUIT,
5.7
MAGNETIC
BUBBLE
MEMORIES
Device Complexity Failure Rates for Memory
Storage Sttucture -Cl ~ and C99
Write Duty Cycle Factor - ~
=
.00007(h@”3
C22
s=
.00001 (N2)”3
N2
-
Number of Bits, N2s 9 x 106
%2
Zw
D=
R/w=
=
1
Avg. Device Data Rate
Mfg. Max. Rated Data Rate
No. ofReads
~,
per Write
NOTE:
For seed-bubble generators, divide
~
by 4, or use 1, whkhever is greater.
b
AJlOther Model Parameters
Parameter
Section
I
C5
I
5.9
5.10
D=
5-12
Avg. Device Data Rate
Mfg. Max. Rated Data Rate
~,
I
I
&
MIL+IDBK-217F
S.8
MICROCIRCUITS,
XT
TABLE
FOR ALL
-18
*
-1!!
.
1
I
5-13
—.———
—_z—————...—
.,.
.
.-.
,!
..!-..
f
MIL-HDBK-217F
I
I
I
5.9
MICROCIRCUITS,
C2 TABLE
FOR
ALL
I
Package Failure Rate for all Mhocircuits
. —~.
Fbnnetb . w%
w/Solder or
Weld S@ Pin
Grid Array
Number of
Funct”mnal
Pins, Np
Dlf% ti
Gtass
Sea?
.
(PGA)l, SMT
(Leaded and
Nonkmded)
3
4
6
8
10
12
14
16
18
22
24
28
36
40
1.
c2=2.8
x 10+
3.
C2 = 3.0
x 10-5 (N~l
5.
C2 = 3.6
X 10+
C2
xp”
Fk@adcs wtth
Axiaf Leads on
Cans4
50 Mil Centers3
Nonhermetic:
DIPs, m
SMT (Leaded
and
Nonleaded)5
.00047
.00073
.0013
.0021
.0029
.0038
.0048
.0059
.0071
.0096
.011
.014
.020
.024
.048
.00092
.0013
.0019
.0026
.0034
.0041
.0048
.0056
.0064
.0079
.0087
.010
.013
.015
.025
.032
.053
.076
.097
::
128
180
224
.
-
(f$J ‘.m
.=
.00022
.00037
.00078
.0013
.0020
.0028
.0037
.0047
.0058
.0083
.0098
.00027
.00049
.0011
.0020
.0031
.0044
.0060
.0079
2.
c~ = 9.0 x 10-5 (N&1”51
4.
C2 = 3.0
.0012
.0016
.0025
.0034
.0043
.0053
.0062
.0072
.0082
.010
.011
.013
.017
.019
.032
.041
.068
.098
.12
x 10-5 (N~2.01
1.08
(I$J
NOTES:
1.
SMT:
Surface Mount Technology
2.
DIP:
3.
If DIP Seal type is unknown, assume glass
4.
The package failure rate (C2) aocounts for failures associated only with the package itsetf.
Dual In-Line Package
Failures associated with mounting the package
Section 16, Interconnection Assemblies.
5-14
..=
. —————————
———
to a circuit board are accounted for in
I
MIL-HDBK-217F
I
5.1O
MICFIOCJRCUITS,
%E,~L
Envinmment Factor - ~
ANDxO
TABLES
FOR
ALL
Quality Faotors - ~
Environment
%E
%
%
.50
Descrf@on
s~
2.0
4.0
%
NS
4.0
N“
6.0
AC
4.0
%F
5.0
‘Uc
5.0
*UF
8.0
ARW
8.0
MF
5.0
SF
1:
.
I
u
.
Procured in fufl accordance
with MIL-M-38!H O,Ciass S
requirements.
2.
Procuraf in full accordance
with MlL-+=3853smd
~a
B lherwo (Cfaae u).
3.
Hybrids: (Procured m Cfaaa
s requirements (Qualily L@vOl
K) of MIL-H~.
1.
Procured in full accordance
with MIL-M-3851 O,class B
requirements.
2.
Procured m fut!accordance
with MIL-I-38535, (Class Q).
3.
Hybrids: Procured to Class B
requirements (QualityLevel
.25
.50
ML
12
c1
220
Learning Factor - XL
Years in Production, Y
I
s .1
.5
1.0
1.5
7CI
2.0
1.8
1.5
1.0
1-f)of MIL-H-3$534.
1.2
*
XL=
.01 e)(p(s.ss - .35Y)
Y = Years generic cfevice type has been
in production
Fully compliant with all
requirements of paragraph 1.2.1
d MIL-STD-883 and procured to a
MIL drmving, DESC drawing or
dher government approved
documentation. (Does not include
hybrids). For hybrids use custom
screening section below.
2.0
5-15
T**
& --
b--h
-a--s
-d.-
..—1
4 ---
I
.,.
.. . .
,, ..+....
.,.
MIL-HDBK-217F
5.10
MICROCIRCUITS,
%E, %L AND XQ
TABLES
FOR
—
ALL
Quality Factors (cent’cf): ~
Group
1“
2*
3
4*
CdcUlation for Custom Screening Programs
Poinf Va)uatkm
MlL-STD-&
Scmermeat (Note 3)
TM 10IO(Ternperature Cycle, Cond BMinirmsm)and TM 2001
(Constant Acceleratbn, Cord B Minimum) and W 5004 (or 5008
30
36
Th42020Pirld(PaRi0fe
11
TM 5004
5
50
for Hybrids) (Finaf Electrkals @Te~E%trenws)
and TM 1014
(Seal Test, Cond ~ B, or C) and TM 2009 (External Visual)
TM 1O1O (Terrqmature Cycle, Cond B Minimum) or TM 2001
(Constant Acceleration, Cond B Minimum)
TM 5004 (or 5008 for Hytxlds) (Fhal EkOtca& @ Terrp Extremes)
and TM 1014 (Seal Test, Cond A, B, orC) and TM 2009 (External
visual)
Pre-Bum in Electrkals
TM 1015 (Bum-in B-LeveVS-Level) and TM 5004 (or 5008 for
(Post Burn-in ElectdcaJs @ Te ~ Extremes)
fmpaothJ0ie0
(or 5008 for Hybrids)
~)
37
11
(Final Electricats @ Te~rature
(B Level)
(S Level)
(Note 1)
Extremes)
TM 2010/17
6
7*
7
(internal Visual)
7
TM 1014 (Seal Test, Cond A, B, or C)
7
(Radiography)
8
TM 2012
9
TM2009 (ExternalVisual)
7
10
TM 5007/5013
1
11
TM 2023
(Note 2)
1
Bond Pull)
87
ZQ =2+
Z Point
●NOT APPROPRIATE
NOTES:
1.
2.
3.
4.
5.
(GaAs) (Wafer Acceptance)
(Non-Destructive
(Note 2)
Valuations
FOR PIJWTIC
PARTS.
Point valuation only assigned if used independent of Grwps 1, 2 or 3.
Point valuatbn onty assigned if used independent of Groups 1 or 2.
Sequencing of tests within groups 1, 2 and 3 must be followed.
TM refers to the MIL-STD-883 Test Method.
Nonhermetk pafis should be used onty in controlled environments (i.e., GB and other
temperaturelhumldtty
controlled environments).
EXAMPLES:
1.
Mfg. performs
Group 1 test and Class B bum-in:
7
-.
Mfg. performs
infernal visual test,
~Q
=
2 +_
87
seal test and final electrical test:
Other Commercial or Unknown Screening Levels
= 3.1
~Q
fiQ=
=
2+~
87
= 5.5
10
5-16
.—___ . —
—-
., .,.
MIL-HDBK-217F
5.11
h81CROClRCU?TS, 7.s DETERMINATION,
(ALL
EXCEPT
HYBRIDS]
Ideally, device case temperatures should be determined from a detailed thermal analysis of the
wmm.
NV*
@wtion temperature is then calculated with the fofbwing relationship:
..
TJ .
Tc +
Tempemture
OKP
TJ
=
Worst Case Ju~ion
Tc
=
Case Temperature (oC). If not avaiM#e,
Default Case Tempemture
TC (“C)
I
(3JC =
35
45
60
50
Junction-toese
~C).
(T~
60
w
the Wlowing default tatlb.
for all Environments
75
75
60
I 35
50
60
45
thermal resistance (°CAwtt) for a device soldered into a printed circuit
board. If OK is not available, use a Vabe contained in a specification for the closest
equivalentdevke or use the following tabJe.
Die Area >14,400
Package Type
(ceramic only)
(w
ew
Die Areas
14,400 rni?
8JC (~
Dual-in-Lm
11
28
Flat Package
10
22
Chip Carner
10
20
Pin Grid Array
10
20
70
Can
P
m~
=
The maximum power dmtion
realized in a systemappficatiin. If the applied power is
not available, use the maxknum power dissipationfrom the specificationfor the closest
equivalent device.
I
MIL-HDBK-217F
5.12
MICROCIRCUITS,
T-l
DETERMINATION,
(FOR
This sectbn descrfbes a method for estimating junction temperature
mounted inahybrkfpackage.
—
HYBRIDS)
(TJ) for integrated circuit dke
A~k~~mti~timormrew-e~-tiW
within a sealed package. Each substrate assetity
consists of active and passive chips with thick orthin
film metallization mounted on the substrate, whii
in turn may have multiple layers of metallization and
dielectric on the surface.
substrate.
The
characteristics.
Figure 5-1 is a cross-sectional
layers within the hybrid are made
The table folbwlng
view of a hybrid with a single multi-layered
up of various
materials
with different
thermal
Figure 5-1 provkles a llst of commonly used hybrid materials with
typical thicknesses and comesponding thermal conductivtties (K). If the hybrid internal structure cannot be
determined, use the following default values for the temperature
1O“c; transistors, 25%;
diodes, 20W.
kalJrm
~
rise from case to junction: miomdrculs,
are at Tc.
CHIP (A)
LID
CHIP ATJACH (B) .
\~
I
INSULATING
LAYER (C)
m
SUBSTRATE (D)
MATERIAL
THICKNESS, L i
EPOXY (E)
PACKAGE
LEAD
CASE (F)
Figure 5-1:
5-18
Cross-sectional
View
of a Hybrtd with a Single
Multl-Layered
Substrate
MIL-HDBK-217F
5.12
MICROCIRCUITS,
Tvkal
DETERMINATION,
(FOR
HYBRIDS)
Hvbrid Characterktii
Feature
From Figure
5-1
Typkal
Thickness,
+ (in.)
Typical U!wge
Material
T-l
Conductivity,
Ki
.W/in*
() Win
IL
Ki
()()
i
( in2 oC/W
Chip Device
0.010
A
2.20
.0045
chip Devbe
0.0070
A
.76
.0092
Au Eutectic
Chip Attach
0.0001
B
6.9
.000014
Solder
Chip/Substrate
Attach
0.0030
B/E
1.3
.0023
Epoxy (Dielectric)
Chip/Substrate
Attach
0.0035
BIE
Epoxy (Conductive)
Chii Attach
0.0035
Thck Film Dielectric
Gl=
Alumina
Substrate,
Beryllium Oxide
Substrate,
Kovar
Silicon
.0060
.58
B
.15
.023
0.0030
c
.66
.0045
MHP
0.025
D
.64
.039
PHP
0.025
D
Case, MHP
0.020
F
AJuminum
Case,
MHP
0.020
F
4.6
.0043
Copper
Case,
PHP
0.020
F
9.9
.0020
NOTE:
Insubthg
Layer
Muftichip Hybrid Package, PHP: Power Hybrid Package
MHP:
6.6
.42
.0038
.048
(Pwc > 2W, TypicaUy)
;1(*)(‘i)
em=
=
n
=
Number of Material Layefs
Ki
z
Thermal Conductivity of ith Material
Li
=
Thiiness
A
=
A
W/in*
~
()
(User Provided or Fmm Table)
of im Material (in) (User Provided or From Table)
Die Area (inz). If Die Area cannot be readity determined, estimate as follows:
A = [ .00278 (No. of DB Active Wire Terminals) + .041#
Estimate TJ
as Folk)ws:
TJ = Tc + .9 (e~
Tc
=
Hybrid
Case
Temperature
eJ~
= Junction-to-Case
Pf)
=
(p~
(“C). If unknown, use the Tc Defautt Table shown in Section 5.11.
Thermal Resistance (°C/W) (As determined above)
Die Power Dissipation (W)
5-19
MIL-HDBK-217F
5.13
MICROCIRC
Example 1:
Given:
UIT&
CMOS
EXAMPLES
Dlgftal Gate Array
A CMOS digitaltiming~
(4048) in an ahborne inhabitedcargo applkxdbn, case temperature
4Y’C, 75mW power deefpatim
The device is pmwrad with normal marndacturetsscreening
consisting of terrperature oycflng, oomtant aooeleratbn, electrical testing, seal test and external
visual Owpectkm, in the seqMnce given. The oorrponent manufacturer also performs a B-1evel
bum-in folbwed by electrical testing. AU screens and tests are performed to the applicable MILSTD-883 screening method. The package is a 24 pin oeramic DIP with a glass seal. The device
has been manufactured for severaf years and has 1000 transistors.
Section 5.1
c1
=
.020
1000 Transistor
XT
=
.29
Determ\ne TJ from Sectbn 5.11
-250
Gates, MOS Cl Table, Digital Column
TJ = 48W + (28”@W)(.075w)
= 50W
Determine ~T from Section 5.8, Digital MOS Column.
c~
=
.011
Section 5.9
?tE
=
4.0
Section 5.10
7CQ
=
3.1
Seotion 5.10
Group 1 Tests
Group 3 Tests (Blevel)
50 Points
TOTAL
80 Points
XL
Section 5.10
1
=
~=
Example
Given:
2:
[ (.020)(.29)
+ (.011) (4)] (3.1)(1)=
.15 Failure/106 l-lows
EEPROM
A 128K
Flotox EEPROM
that is expected
to have a TJ of 80”C
and experience 10,000
readhmite cycles over the life of the system.
The part is procured to all requirements of
Paragraph 1.2.1, MIL-STD-883,
Class B screenin
level requirements and has been in
in a 26 pin D7 P with a glass seal and will be used In an
productbn for three years. tt b packagd
airborne uninhabited oargo application.
~=(ClXT+C2YCE+~)nnL
c1
=
.0034
Section 5.2
XT
=
3.8
Section 5.8
C2
=
.014
Section 5.9
Sectbn
5.2
MIL-HDBK-217F
5.13
~E
=
5.0
Section 5.10
ICQ
=
2.0
Section 5.10
XL
~
1.0
Section 5.10
.38
Section 5.2:
c=
b
A2B*
%[
~
= f32 = O for Fiotox
No ECC, %ECC = 1
A,=.l,7Ksc
s15KEntry
81 .3.8
(
~~
EXAMPLES
1
=AIB1+~~~
~
MICROCIRCUITS,
(Use Equation 1 at bottom of B1 and ~
Tabie)
= ‘1 B, = (-1)(3.8) = .38
I
I
~=
Example 3:
Given:
[ (.0034)(3.8)
+ (.014)(5.0)+
.38] (2.0)(1)=
.93 Failures/106
Hours
GaAs MMIC
A MA4GM212
Single Pole Double Throw Switch, DC -12 GHz, 4 transistors, 4 inductors, 8
resistors, maximum Input PD = 30 ~,
16 pin hermetio flatpack, maxirrum TCH = 14WC m a
ground benign environment. rne part has been manufactured for 1 year and is screened to
Paragraph 1.2.1 of MIL-STD-883, Class B equivalent soreen.
Seotion 5.4
c1
=
4.5
Section 5.4, MMIC Table, 4 Active Elements (See Footnote to
.061
Tabie)
Section 5.8, TJ = TCH = 145°C
3.0
Section
.0047
Section 5.9
%E
=
.50
Section 5.10
XL
=
1.5
Section 5.10
7FQ
-
2.0
Section 5.10
~=
NOTE:
[(4.5)( .061) (3.o) + (.0047)(.5)]
UrhOwn
(1.5)(2.0)
Application
= 2.5 Failures/106
Hours
The passive elements are assumed to contribute negligibly to the overall device failure rate.
Example 4:
Given:
5.4,
Hybrid
A linear muttichip hybrid driver in a hermetically sealed Kovar package. The substrate is aiumina
there are two thi@ film dielectric layers. The die and substrate attach materials are
conductive epoxy and soider, respectively. The application environment is navai unsheltered,
65°C case temperature and the device has been in production for over two years. The device is
and
5-21
MIL-HDBK-217F
5.13
MICROCJRCUJTS,
EXAMPLES
screened to MIL-STD-883, Method 5008, in accmkwxe
The hybrid contahw the followhg components:
Active Components:
Passive Components:
LMl 06 Bipolar Co~rator-er
Die (13 Transistors)
LM741A Bipolar Operational Arnpliir Die (24 Transistor)
112222
17
S NPN Transistor
Si PNP Tmnsistor
Si General Purpose Diodes
-
Cerwlb c~
Capacitors
Thick FItm Resistors
+ -~E)
1.
with Table Vlll, Class B requirements.
%F ~
~
Sectbn
5.5
Estimate Active Device Junction Terrperatures
If limited informationis available on the specific hybtid materials and construction characteristics
the defautt case-to-junction temperature rises shown in the introduction to Section 5.12 can be
used. When detailed information becmmes available the following Section 5.12 procedure
shoukf be used to determine the junction-to-case (tlJc) thermal resistance and TJ vatues for
each component.
,,c
=
w
A
(Equatbn
1)
~
()()
Li
Layer
Ki
Fgure 5-1 Feature
in2 OC/W
Silicon Chip
Conductive
Epoxy
A
.0045
B
.023
Two Dielectric Layers
c
Alumina Substrate
D
.039
Solder Substrate Attachment
E
.0023
Kovar Case
F
A
=
TJ =
5-22
(2)(.0045)
=
Die Area= [ .00278 (No. Die Active Wire Terminals) + .0417J2
Tc + OJC ‘D
(Equation 3)
.009
(Equation 2)
—
MIL-HDBK-217F
5.13
LM 106
No. of Pins
LM741A
14
8
I
I
Si NPN
s
3
3
PNP
.33
.35
.6
.6
Area of Chpjin.2)
.0041
.0065
.0025
.0025
(w
‘J (~)
2.
lSi
Diode’
EXAMPLES
Source
Vendor Spec. Sheet
2
I
Power Dissipation,
pD (W)
e~
MICROCIRCUITS,
II
.42
CircaJitAnalysis
.0022
Ey.
2 Above
30.8
19.4
50.3
50.3
56.3
Equ. 1 Above
75
72
95
95
89
Ew.
3 Above
Calculate Failure Rates for Each Corrqmnent:
A)
LM106 DM, 13 Transistors (from Vendor Spec. Sheet)
~=[c,q+c~Yc~l~Qq
Because
‘P
Section 5.1
C2 = O;
=
Cl XT
=
(.01)(3.8)(1)(1)
~Q
XL
~T:
= .038 Failures/106
LM741 Die, 23 Transistors.
B)
$
=
5.8;
s-h
~Q,
ZL
Default tO 1.0
Hours
Use Same Procedure as Above.
Cl XT Z* XL = (.01)(3.1)(1)(1)
= .031 Failures/106
Hours
c) Silicon NPhl Transistor, Rated Power= 5W (From Vendor Spec. Sheet), Vc#VCEO
= .6,
Linear Application
~
D)
s8CtiOn 6.3; ZQ, ~E Defautt to 1.0
=
=
%“PA’R%KQ’E
=
.0023 Failures/l 06 Hours
(.00074)(3.9)(1
.5)(1 .8)(.29) (l)(1)
Silicon PNP Transistor, Same as C.
.0023 Failures/106
E)
Hours
Silicon General Purpose Diode (Anabg),
Construction.
Vottage Stress=
%’T%~nQ%
(.0038)(6.3)(.29)(1)(1)(1)
60%, Metallurgically Bonded
Section 6.1; nQ, XE Default to 1.0
.0069 Failures/l 06 Hours
5-23
I
,.
1
.
I
.
.. . .
.
MIL-HDBK-217F
[
5.13
MICROCIRCUITS,
.
EXAMPLES
F) Ceramic ChipCapacitor, Voltage Stress= 50%.,
‘A “ ‘CASE for the Hybrid, 1340 pF, 125°C Rated
Tenp
I
%
G)
=
=
=
Section 10.1 1; xQ, fiE Default to 1.0
%%V%)’E
(.0028)(1.4)(1)(1)
.0039 Faitures/106
Hours
Thiok Film Resistors, per kwtructbns in Section 5.5, the contribution of these devices is
considered insiinifiint
relative to the overall hybrid failure rate and they maybe ignored.
[XbJc~c](l+2@ItF~q
6.0
Section 5.10
5.8
Section 5.5
1
Section 5.10
1
Section
[ (1)(.038)+
(1)(.031)+
+ (2)(.0069)
+ (2)(.0039)
1.3 Failures/l
5-24
06 Hours
(2) (.0023)+
5.10
(2) (.0023)
](1 + .2(6.0))
(5.8) (1)(1)
f
... .
.
.
. . . . . ..
.
.
. .
...
. .
.. ..— .-
..!.
MIL-HDBK-217F
6.0
DISCRETE
SEMICONDUCTORS,
INTRODUCTION
The semiconductor tmnsistor, dbde and opto-electronic devke sections present the faWe rates on
cmstwtbn.
An mafytbd -I
of the talbre rate is also presented for each
the basis ofdevketypeand
devkes require different failure rate
devke category.
The various types of dkcrete semkmductor
models that vary to some degree.
The models apply to single devices unless otherwise noted. For
mh**v-rn
as@k_t~~ti
h~ti5.5*Mb
Md.
The applicable MIL specification for transistors, and optoelectronk
quality levels (JAN, JANTX, JANTXV) are as defined in MIL-S-19500.
The t~p9mtWt3
faCtOr (%T) is based on the devke
jumtbn
devices is MIL-S-19500.
temperature.
Junctbn
The
temperature
should be oomputed based on worse case power (or maxhmm power c!ksipatbn) and the device junction
to ease thermal resktanoe. Determinatbn of junction temperatures is explained in Section 6.14.
I
I
I
Refererwe
section.
28 should be consulted for further detailed information on the mode!s appearing
in this
6-1
MIL-HDBK-217F
I
DIODES,
6.1
LOW
—
FREQUENCY
SPECIFICATION
MlL-S-l 9500
DESCRIPTION
@
Frecpxmqr D-s:
General Putpse Analog, Switch~
Fast Rewvery, f%wer RecWer, Tmsient S~r,
Current
Regulator, Vol@e Regulator, Voltage Reference
Lp =
Failures/l
&##czQzE
OG
Base Failure Rate - &
Diode Type/Appiicatbn
Temperature
“
General PuqxM Analog
switching
Power Redfiir, Fast Recovery
Power Rectifier/Schottky
Power Diode
Power Rectifier with
HigiI Voltage Stacks
Transient Suppressor/Vanstor
Current Reguiator
Voltage Regulator and Voltage
Reference (Avaianche
and Zener)
.0038
.0010
.069
.0030
.0050/
Junction
.0013
.0034
.0020
I
i
(General Purpose Analog, Switching, Fast Recovery,
Poul r Rectifier, TI dent Su-pgm isor)
XT
TJ ~C)
XT
TJ (’C)
XT =
TJ -
6-2
1.0
1.2
1.4
1.6
1.9
2.2
2.6
3.0
3.4
3.9
4.4
5.0
5.7
6.4
7.2
8.0
((
exp -3091
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
9.0
10
11
12
14
15
16
18
20
21
23
25
28
30
32
1
1
TJ + 273 -Z&
JunctionTemperature (“C)
))
Factor - q
(VOitag. Regulator, Voitqo Rdormce,
h cun’UWRncddYW)
—.---- . ... . -~---.
#
%T
TJ (“C)
‘J (’=)
~
Terrperature Factor - XT
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
Hours
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
1.0
1.1
1.2
1.4
1.5
1.6
1.8
2.0
2.1
2.3
2.5
2.7
3.0
3.2
3.4
3.7
%T =
exp
-1925
((
TJ
.
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
1
TJ +273-=
JunctionTemperature (oC)
v
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
6.4
6.7
7.1
7.5
7.9
8.3
8.7
1
))
.,
+.
MIL-HDBK-217F
DIODES,
6.1
7CS
I
Transient Suppressor,
Voltage Regulator, Voltage
Reference, Current
Regulator
Quality
tcQ
JANTXV
0.7
JANTX
1.0
JAN
2.4
Lower
5.5
Plastic
8.0
1.0
All Others:
v~ s .30
0.054
.3 c v~ s .40
0.11
.4< Vs s .50
0.19
.5<v#60
0.29
.6< Vs s .70
0.42
.7< V~ s .80
0.58
.8< V~ s .90
0.77
.9<v#.
1.0
oo
Environment Factor - ZE
Environment
For All Except Transient Suppressor, Voltage
Regulator, Voltage Reference, or Current
Regulator
7CS=
FREQUENCY
Quality Factor - X(
Electrical Stress Factor - ZS
Stress
LOW
.054
~s = v~2.43
(Vs
s .3)
(.3 < v+
1)
Voltage Applied
~~ = Voltage Stress Ratio =
Voltage Rated
Voltage is Diode Reverse Voltage
7tE
GB
1.0
GF
6.0
%
9.0
N~
9.0
Nu
19
‘Ic
13
‘IF
29
*UC
20
‘UF
43
‘RW
24
SF
.50
MF
14
ML
32
CL
320
Contact Construction Factor - xc
Contact Construction
I
Metallurgically Bonded
I@
1.O
I
Non-Metallurgically Bonded and
Spring Loaded Contacts
I
2.0
6-3
MIL-I+DBK-217F
6.2
HIGH FREQUENCY
DIODES,
(MICROWAVE,
SPECIFICATION
MlL-S-l 9500
RF)
DESCRIPTION
Si IMPA7T; Buk Effect, Gunn; Tunnel, Back; Mixer, Detector,
PIN, Schottky; Varactor, Step Recovery
Failures/l 06 Hours
Tenqxmtum
Base Failure Rate - ~
Dbde Type
h
TJ
Si lMPAIT (s 35 GHz)
Gunn/Bulk Effect
Tunnel and Bd (including
Mixers, Detectors)
PIN
Schottky Barrier (including
Detectors) and Point Contact
(200 MHzs Frequenqs 35 GHz)
Vamctor and Step Recovery
.22
.18
.0023
.0081
.027
.0’025
Temperature Factor - q
TJ (“C)
25
30
35
40
45
50
55
60
65
70
75
80
85
90
1:
XT =
(All Types
XT
Excq)t
IMPA7T)
TJ (oC)
1.0
1.1
1.3
1.4
1.6
1.7
1.9
105
110
115
120
125
130
135
4.4
4.8
5.1
5.5
5.9
6.3
6.7
2.1
2.3
140
145
7.1
7.6
2.5
2.8
3.0
150
155
160
8.0
8.5
3.3
3.5
3.8
165
170
175
4.1
exp -2100
1
TJ +273-~
((
TJ =
6-4
9.0
9.5
10
11
JunctionTemperature (“C)
1
))
Factor- %T
~)
1.0
1.3
1.8
2.3
3.0
3.9
5.0
6.4
8.1
25
30
35
40
45
50
55
60
65
70
75
80
85
16
19
z
100
24
29
35
‘T
TJ
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
10
13
=
=
42
50
E
84
99
120
140
160
180
210
250
280
320
370
1
((
exp -5260
1
TJ + 273 -Zz
))
JunctionTemperature (“C)
Application
Factor - fiA
Diodes Application
Varactor, Voltage Control
I
~A
.50
Varactor, Mu?tip!ier
2.5
All Other Diodes
1.0
,,.
.- .-.
,.
.
MI-HDBK-217F
6.2
Power
DIODES,
HIGH
FREQUENCY
(MICROWAVE,
RF)
Quality Factor - ~
(Scha ky)
Rating Factor - XR
Rated Power, Pr (Watts)
Quaiity’
%
PIN Diodes
p~ < 10
JANTXV
.50
10 < Pr s
IOO<Pr
100
1.3
Sl~
1000 <Pr
2.0
S3000
All Other Diodes
JANTX
1.0
JAN
1.8
Lower
2.5
2.4
1.0
All Other Diodes
Pthl Diodes
Iqq = .326 k(Pr) -.25
Plastic
●
For high frequency part classes notspecified
to
MlL-S-l 9500 equipmentqualityclasses are
defined ae devices meeting ths Same
requirementsas MlL-S-l 9500.
XR = 1 .0
Environment Factor - z=
Quaiity Factor - nQ
Environment
(All Ty pas Except Scl
Quality”
I
~E
1.0
t
GF
2.0
I
%
5.0
Ns
4.0
GB
JANTXV
●
.50
.50
JANTX
1.0
JAN
5.0
Nu
11
Lower
25
Ac
4.0
Plastic
50
‘IF
5.0
*UC
7.0
For high frequency part classes not spedfied to
Ml L-S-l 9500 equipmentqualhyclassesare
defined as devbes meeting the same
raqulrementsas MlL-S-l 9500.
..
‘UF
12
‘RW
16
SF
MF
.50
9.0
ML
24
CL
250
6-5
MIL-HDBK-217F
●
✎
✎
6.3
TRANSISTORS,
LOW
FREQUENCY,
BIPOLAR
—
DESCRIPTION
NPN (Frequency<
PNP (Frequency<
SPECIFICATION
MIL-S-19500
Ap =
‘AXR%ZQXE
%?
Failures/l
06 I-loufs
Application Factor - %A
Base Failure Rate - ~
I
Type
I
NPN and PNP
I
Application
h
.00074
I
TJ
(*)
XT
25
30
35
40
45
50
1.0
1.1
1.3
1.4
1.6
1.7
55
60
;::
%
75
80
5::
2.8
3.0
E
95
100
:::
3.9
4.2
200 MHz)
200 MHz)
T J (“C) -
I
1.5
Linear Ampliiicatiorl
.70
Switching
%T
105
110
115
120
125
4.5
4.8
5.2
5.6
5.9
130
135
140
145
150
155
160
165
170
175
6.3
6.8
7.2
7.7
8.1
8.6
9.1
9.7
10
11
Power Rating Factor - ZR
..
Rated Power (Pr, W~S)
exp -2114
1
1
TJ + 273 -=
((
TJ =
Junclbn Temperature (“C)
.43
Pr = .5
.77
Pr =1.0
1.0
Pr = 5.0
1.8
Pr = 10.0
2.3
Pr = 50.0
4.3
P~ = 100.0
5.5
10
I
))
Rated Powers .lW
%-. *
~ - (Pr).37
Rated Power >.1 W
6-6
I
?tR
Pr~ .1
Pr -500.0
XT =
%A
.l@
I
-
.
MIL-HDBK-217F
6.3
Voltage
I
o<v
VCEO
-
~~
#.3
@.5
BIPOLAR
Environment
%E
1.0
GF
6.0
.21
%
9.0
9.0
.16
.4<v
FREQUENCY,
GB
.11
.3<v~s.4
LOW
Erwironment Factor - ~F
Stress Factor - YCS
Applied vCE/Rabd
TRANSISTORS,
.5c
V~S.6
.29
Ns
.6<
V#.7
.39
N“
19
AC
13
‘IF
29
AM
20
‘UF
43
‘RW
24
.7<v
@.0
.8<
V#.9
.9<
v~ s 1.0
.54
.73
1.0
—~~
%
-
,045 exp (3.1(vS))
v~
.
Applied VCE / Rated VGEO
VCE
=
Voltage, Collector to Emitter
‘CEO
-
Voltage, Colleotor to Emitter, Base
(o<v#l.o)
SF
Open
.50
MF
14
ML
32
CL
320
Quality Factor - ZQ
Quality
JANTXV
I
7c~
.70
JANTX
1.0
JAN
2.4
Lower
5.5
Plastic
8.0
6-7
MIL-HDBK-217F
6.4
TRANSISTORS,
LOW
FREQUENCY,
SPECIFICATION
MIL-S-19500
SI
FET
DESCRIPTl
ON
N-Channel and P-Channel Si FET (Frequencys
400 MHz)
Ap = kb7cT7cA7tQ7cE
Failures/l 06 Hours
Application Factor - ~A
Base Failure Rate - ~
●
Transistor Type
I
Application
(Pr, Rated Output Power)
%
I :::5I
MOSFET
JFET
Linear Amplifkxtion
(Pr < W)
small S@rlal Switching
.70
Temperature Factor - n~
T ~ (“C)
TJ (“C)
*T
25
E
40
45
50
55
60
65
70
75
80
85
90
95
100
1.0
105
1.1
1.2
110
115
120
125
130
135
140
145
150
155
160
165
170
175
1.4
1.5
1.6
;::
2.1
2.3
2.5
2.7
u
3.4
3.7
Power FETs
(Non-linear, Pr z
XT
::;
4.5
4.8
5.1
5.4
5.7
6,0
6.4
6.7
7.1
7.5
7.9
8.3
8.7
2<
nT
=
exp
- 1925
((
TJ
=
Junction
1
TJ + 273
2.0
5<Pr<~W
4.0
50 s Pr < 250W
8.0
10
Environment Factor - x=
I
Environment
I
xc
GB
1.0
GF
6.0
GM
9.0
NS
9.0
1
-izii
))
Temperature
Pr<5W
Pr > 25OW
A
*
2W)
(“C)
1
Quality Factor - ~
Ouality
7CQ
JANTXV
.70
Nu
19
Alc
13
‘IF
29
*UC
20
*UF
43
24
JANTX
1.0
*RW
JAN
2.4
SF
Lower
5.5
MF
14
Plastic
8.0
ML
32
CL
320
.50
b-U
I
1=-IO
I
=1
I
MIL-HDBK-217F
6.5
Lp = kb7cT7TQ7cEFailures/l
OG Hours
Base Failure Rate - ~
Quality Factor - ~
All Unijuntilon
.0083
I
~T
100
nT
TJ
TJ (“C)
1.0
1,1
1.3
1.5
1.7
1.9
2.1
2.4
2.7
3.0
3.3
3.7
4.0
4.4
4.9
5.3
=
=
exp
-2483
((
Junction
Temperature
%Q
JANTXV
.70
JANTX
1.0
JAN
2.4
Lower
5.5
Plastic
8.0
XT
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
1
TJ + 273
Quality
I
Temperature Factor - XT
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
UNLIUNCTION
DESCRIPTION
Unijunction Transistors
SPECIFICATION
MIL-S-19500
T ~ (“C)
TRANSISTORS,
5.8
6.4
6.9
7.5
8.1
8.8
9.5
10
11
12
13
13
14
15
16
Environment Factor - XE
—
Environment
%E
GB
1.0
GF
6.0
%/l
9.0
9.0
1
-m
Nu
19
AC
13
‘IF
29
‘Uc
20
*UF
43
*RW
24
))
(°C)
SF
.50
MF
I
ML
32
CL
L
6-9
I
I
<1
I
4
MIL-HDBK-217F
TRANSISTORS,
6.6
LOW
NOISE,
HIGH
FREQUENCY,
BIPOLAR
DESCRIPTION
Bipolar, Micmvave RF Transistor
(F~ency
>200 MHz, Power< lW)
SPECIFICATION
MIL-S-19500
kp =
‘b~z#&QKE
Failures/l 06 Hours
Applkatlon
Note: The model applies to a single die (for multiple die use the hybrid model). The model does
apply to ganged transistors on a single die.
Power Rating Factor - Xn
..
Base Failure Rate - &
R~6d ~
(Pr, W~S)
%R
I
1
I
I
—
I
,18
All Types
I
I
Temperature Factor - q
TJ (“C)
XT
TJ W)
-
XT
25
1.0
105
30
35
1.1
1.3
110
4.8
40
45
50
55
;:;
1.7
115
120
125
130
5.2
5.6
5.9
6.3
6.8
60
65
70
;::
2.3
2.5
:Z
145
150
75
80
85
2.8
3.0
3.3
3.6
3.9
4.2
155
160
165
170
175
E
100
XT =
exp -2114
7KR..43
P~ S.lw
~
Pr >.lW
= (Pr )“37
I
7.2
7.7
Voltage
Applied VCE/R~ed
o<v
1
TJ +273-=
JunctionTemperature (oC)
1
))
.3 <V=s
I
VCEO
%
.11
.4
.16
#.5
.21
.5<
V#.6
.29
.6<
V8S.7
.39
.7<
VSS .8
.54
.73
.8<v~s.9
.9<
1.0
v~ s 1.0
%
-
.045 exp (3.1(vS))
v~
-
Applied VCE / Rated VC~
v=
-
Vottage, Collector to Emitter
‘CEO
=
Voltage, Collector to Emitter, Base
Open
I
Stress Factor - x~
#.3
.4<v
((
TJ =
4.5
0.1
8.6
9.1
9.7
10
11
.43
.55
.64
.71
.77
.83
.88
.92
.96
Pr < .1
.l<Pr
5.2
.2< PrS.3
.3< Pr $.4
.4< PrS.5
.5< Pr~.6
.6< PrS.7
.7< PrS.8
.8< Pr <.9
I
(o< v~ s 1.0)
. ..
,,
!.,
MIL-HDBK-217F
6.6
TRANSISTORS,
LOW
NOISE,
HIGH
FREQUENCY,
BIPOLAR
Environment Factor - ~F
Quality Factor - ~
7tQ
Quality
.50
JANTXV
Environment
~E
GB
1.0
GF
2.0
JANTX
1.0
GM
5.0
JAN
2.0
Ns
4.0
Lower
5.0
Nu
NOTE: For these devices, JANIXV quatii class must
inciude IR Scan for die attach and scraan for barrier
19
Alc
4.0
%F
5.0
‘Uc
7.0
layer pinhotes on gold metallized devices.
‘UF
12
‘RW
16
.50
SF
MF
9.0
ML
24
CL
250
6-11
I
MIL-HDBK-217F
6.7
TRANSISTORS,
HIGH
POWER,
HIGH
SPECIFICATION
M! L-S-19500
BIPOLAR
DESCRIPTION
Power, Mkrowave, RF Bipolar Transistors
(Average Power 21 W)
%=
%%XAXM%ZE
‘ail”res/lo’‘O”’s
Base Failure Rate - ~
.
I
FREQUENCY,
Output Power (Watts)
50
100
.050
.067
.060
.080
.086
.11
.12
.16
.17
.23
.25
Frequency
1.0
(GHz)
.038
.046
.065
.093
.13
.19
s 0.5
;
3
4
5
I
lb
5.0
.039
.047
.067
.095
.14
,19
10
.040
.048
.069
.098
.14
.20
F=
.032 exp(.354(F) + .00558(P))
x
300
.20
.24
.35
200
.12
.14
.20
.28
Frequency (GHz)
400
.36
.42
p
=
500
.62
.74
600
1.1
1.3
OUtp@POwer W)
I
NOTE: Output power refers to the power level for the overall packaged device and not to indwidual transistors within the
package (if more than one transistor is ganged together). The output power represents the power output from the active
device and should not account for any duty cycle in pulsed applications. Duty cycle iS accounted for when determining ‘A.
Temperature Factor - XT
Temperature
(Gnlri
Mdalli7atinn\
\ -Vs (VCE/BVCE@
!.-
TJ (“C)
.
.
s .40
.10
.12
,15
.18
.21
.25
.29
.34
.40
.45
.52
sl 00
110
120
130
140
150
160
170
180
190
200
‘T = .1 exp -2903
((
(VS < .40)
‘T
.
.
.
.
. .
..-
.
. .
.
/Aliiminllm
,,,
,”,
.
.50
.20
.25
.30
.36
.43
.50
.59
.68
.79
.91
1.0
.30
.37
.45
.54
.64
.75
.88
1.0
- z (VS - .35) eXP -2903
.55
.40
.49
.59
.71
.85
1.0
1.2
1.4
1.6
1.8
2.1
1.2
1.4
1.6
=
.
..--.,,--
.,
W..
s .40
.45
.50
.55
Sloo
110
120
130
140
150
160
170
180
190
200
.38
.57
.84
1.2
1.7
2.4
3.3
4.4
.75
1.1
1.7
2.4
3.4
4.7
6.5
8.8
12
15
1.1
1.7
2.5
3.6
5.1
7.1
9.7
13
18
23
30
1.5
2.3
3.3
4.8
6.8
9.5
13
18
))
TJ ~ 273
?:;
1
TJ +273
-5794
$:
40
1
-
=
nT = ?.55 (VS - .35) exp
1
-m
=
VCE / BVCES
VCE
.
Operating Voftage (volts)
BVCES
=
Collector-Emitter Breakdown
Voftage with Base Shorted to
Emitter (Volts)
TJ
=
Peak Junction Temperature (“C)
-5794
1
1
TJ + 273 - ~
((
(.4 < Vs s .55)
‘
))
v~
‘
))
((
(VS s .40)
‘
((
(.4 < v~ s .55)
6-12
.,
TJ (~)
XT = .38exp
1
-
.F”,
Factor - nT
Matalli7atinn\
Vs (VCE/BVCES)
.45
1
TJ +273
,?,
1
,
))
v=
-
VCE / BVCES
VCE
=
Operating Voltage (Votts)
BVCES
=
Collector-Emitter Breakdown
Voltage with Base Shorted to
Emitter (Votts)
TJ
=
Peak Junction Temperature (“C)
I
I
-+
MIL-HDBK-217F
6.7
TRANSISTORS,
HIGH
POWER,
HIGH
ZQ
Quality
Duty Factor
N/A
.50
JANTXV
.46
s 1’%
Pulsed
5!%
1 0%+40
15%
20%
25%
2 30%
.70
1.0
1.3
1.6
JANTX
1.0
JAN
2.0
1.9
Lower
5.0
2.2
N07E: For these devices, JANTXV qualityclass
must IncludeIR Scan for die attach and screenfor
7tA
=
7.6, CW
n~
=
.06 (Duty Factor
barrier layer pinholes on gold metaltized devices.
0/0)
+
.40,
Pulsed
Environment
Matching
BIPOLAR
Quality Factor - ~ —
Application Factor - ~A
Application
FREQUENCY,
Network
Factor - fiM
Matching
~M
Input and Output
1.0
Input
2.0
None
4.0
Factor - zcb
Environment
~E
GB
1.0
GF
2.0
GM
5.0
Ns
4.0
11
Nu
4.0
‘Ic
5.0
‘IF
7.0
*UC
12
‘UF
16
*RW
.50
SF
9.0
MF
ML
24
CL
250
6-13
m-a
-l....
_._.
—.
-“
—.
--
--
--
--
m
AAM”
.-
.-.
.
.
.
.
.
I
MIL4-IDBK-217F
.
TRANSISTORS,
6.8
HIGH
FREQUENCY,
GaA,
SPECIFICATION
MIL-S-19500
FET
DESCRIPTION
Galls Low Noke, Driver and Power FETs (2 lGHz)
Base FaihJre Rate - ~
<.1
%
“
.054
.083
.13
.20
.30
.46
.71
1< F<1o,
%=
F-
Frequency (GHz)
.13
.20
.30
.47
.72
1.1
::
.052
.0093 exp(.429(F)
.084
.&6
.10
.16
.24
.37
+ .486(P))
4sFs1o,
p.
.14
.21
.32
.50
.76
1.2
1.8
6
4
2
-.
--
.052
.052
.052
.052
.052
.052
.052
.052
1
4
5
6
7
0
9
10
Average Output Power (Watts)
1
.5
.1
.36
.56
.85
.96
1.5
2.3
3.5
;::
P<.1
.ls
Ps6
Average Output Power (Watts)
The average output power represents the power output from the active device and should not account for any duty
cycle in pulsed applications.
Temperature Factor - m
Tc (=)
h
1.6
2.1
$:;
4.0
4.9
5.9
7.2
8.7
10
12
15
%T
24
28
33
38
44
50
58
66
M
115
120
125
130
135
140
145
150
155
160
165
170
175
E
97
110
120
14’0
150
;7
-
TC =
U-14
TC (C)
1.0
1.3
25
30
35
40
45
50
55
60
65
70
7s
80
85
90
95
100
Application Factor - XA
((
‘Xp ‘4485
&3-L
Channel Temperature (“C)
298
))
Application (Ps 6W)
All Low Power and Pulsed
I
~A
1
4
P = Average Output Power (Watts)
MIL-HDBK-217F
6.8
Matching
Network
Factor
HIGH
~M
Environment
%3
Input and Output
1.0
Input Only
2.0
None
4.0
~Q
.50
1.0
%
5.0
NS
4.0
%
Qualiiy Factor- ICQ
~E
[
2.0
%c
JANTXV
GaAs
GF
N“
Quality
FREQUENCY,
Environment Factor - xcL
- ~M
Matching
TRANSISTORS,
*UC
*UF
‘RW
JANTX
1.0
SF
JAN
2.0
MF
Lower
5.0
11
4.0
5.0
7.0
12
16
.50
7.5
ML
24
CL
250
FET
MIL-HDBK-217F
6.9
TRANSISTORS,
HIGH
FREQUENCY,
SPECIFICATION
MIL-S-19500
Si
FET
DESCRIPTION
Si FETs (Avg. Power< 300 mW, Freq. >400 MHz)
~
= &Tz@E
Failures/l OGHours
Base Failure Rate - ~
Quality Factor - ~
Transistor Type
I
I
A~
MOSFET
Quality
.060
JANTXV
.023
JANTX
1.0
JAN
2.0
Lower
5.0
.50
I
I
JFET
Temperature Factor - m
TJ (“C)
XT
1.0
1.1
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
‘T
TJ
1.2
1.4
1.5
1.6
1.8
2.0
2.1
2.3
2.5
2.7
3.0
3.2
3.4
3.7
=
=
exp
((
- 1925
7tT
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
1
TJ + 273
Junction Temperature (“C)
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
6.4
6.7
7.1
7.5
7.9
8.3
8.7
1
Environment
))
xc
I
GB
1.0
GF
2.0
GM
5.0
N~
4.0
N“
11
AIC
4.0
‘IF
5.0
‘Uc
-E
Factor - ~=
L
Environment
7.0
*UF
12
‘RW
16
.50
SF
MF
6-16
9.0
ML
24
CL
250
I
MIL-HDBK-217F
6.10
THYRISTORS
AND
SCRS
DESCRIPTION
Thyristors
SCRS, Triacs
SPECIFICATION
MIL-S-19500
Failures/l 06 Hours
Base Failure Rate - ~
I
I
Device Type
Current
Lb
I
All Types
I
Rated Forward Current
‘ffms (Amps)
I
.05
,10
.50
1.0
5.0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
175
Temperature Factor - q
TJ (%)
TJ(%)
1.0
1.2
1.4
1.6
1.9
2.2
2.6
3.0
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
:::
4.4
5.0
5.7
6.4
7.2
8.0
100
TJ
=
=
Factor
- ~R
.0022
I
~T
Rating
exp
((
-3082
8.9
9.9
11
12
13
15
16
la
19
21
23
25
27
30
32
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
1
TJ + 273
Junction Temperature (“C)
1
-m
m
=
+rms
=
))
.30
.40
.76
1.0
1.9
2.5
3.3
3.9
4.4
4.8
5.1
5.5
5.8
6.0
6.3
6.6
6.8
7.0
7.2
7.4
7.6
7.8
7,9
($rmJ”40
RMS Rated ForwardCurrent (Amps)
6-17
MIL-HDBK-217F
.
. .
THYRISTOf?S
6.10
AND
—
SCRS
Voltage Stress Factor - XC
w
Environment Factor - XC
L
Environment
V~ (Blocking Voltage Applied/
BlockingVottage Rated)
v~ s
Xs
.30
.10
%E
%
1.0
GF
6.0
.3<v
#.4
.18
%
9.0
.4<v
#.5
.27
NS
9.0
.5<
V#.6
.38
.6<
V#.7
.51
.7<
V@.8
.8<
V~S.9
NU
19
.65
Alc
13
.82
‘IF
29
1.0
.9 < v~ s 1.0
7CSD.1O
(VS s 0.3)
‘Uc
20
‘UF
43
%J
24
.50
SF
~s = (Vs)
1.9
(VS> 0.3)
MF
14
ML
32
cL
Quality Factor - ZQ
Quality
!
ZQ
JANTXV
0.7
JANTX
1.0
JAN
2.4
Lower
5.5
Plastic
8.0
6-18
320
. .
MIL-HD6K-217F
6.11
OPTOELECTRONICS,
DETECTORS,
DESCRIPTION
Photodetectors,
SPECIFICATION
MIL-S-19500
ISOLATORS,
Opto-isolators,
EMITTERS
Emitters
Failures/l 06 Hours
Quality Factor - ZQ
Base Faiture Rate - &
OptoelectfonkType
-
%
Photodetectors
Photo-Transistor
.0055
.0040
Photo-Diode
Opto-isolators
Photodbde Output, Si@e Device
.013
Photodarlington Output, Single Device
,013
Light Sensitive Resistor, Single Devioe
.0064
Photodiode Output, Dual Device
.0033
Phototransistor Output, Dual Device
.017
Photodarlington Output, Dual Device
.017
Lght Sensitive Resistor, Dual Device
.0086
Emitters
Infrared Light Emitting Diode (IRLD)
.0013
.00023
LightEmittingDiode (LED)
Temperature Factor - ~T
XT
1.0
1.2
1.4
1.6
1.8
2.1
2.4
2.7
3.0
3.4
25
30
35
40
45
50
55
60
65
70
JAW
.70
JANTX
1.0
JAN
2.4
Lower
5.5
Plastic
8.0
.0025
Photot:aosistor Output, Single Device
TJ (“C)
YCQ
Quality
Environment Factor - n
Environment
GB
1.0
GF
2.0
GM
8.0
Ns
5.0
N
75
80
85
90
95
100
105
110
115
-2790
1
TJ
Junction Temperature (“C)
3.8
4.3
4.8
5.3
5.9
6.6
7.3
8.0
8.8
4.0
‘IF
6.0
‘Uc
6.0
‘UF
8.0
‘RW
.50
SF
MF
c1
1
17
9,0
24
;
I
450
<
TJ +273-~
((
=
12
‘Ic
ML
exp
I
XT
TJ (“C)
ttT =
~E
))
6-19
I
MIL-HDBK-217F
I
OPTOELECTRONICS,
6.12
ALPHANUMERIC
SPECIFICATION
MIL-S-19500
—
DISPLAYS
DESCRIPTION
~numedc
Display
%
“
&T’QzE
.
Failures/l 06 Hours
Tenqwature
Base FaihJre Rate - &
Number
%
d
“+)
Charactws
1
1 whgk
Chip
2
2
Chip
W/b@C
.00043
.00026
.00047
.00066
.00030
X)0043
.00047
.00060
.00064
.00077
.00081
.00094
.0011
.0013
.0015
.0016
.0018
.0020
.0021
.0023
.0025
.0026
.00090
3
3 Wlhxjo chip
4
4 w/Logic Chip
5
6
7
8
9
10
.0013
.0013
.0017
.0018
.0022
.0026
.0030
.0034
.0039
.0043
.0047
.0052
.0056
.0060
.0065
:;
13
14
15
TJ (“C)
~T
25
30
35
40
45
50
55
60
65
70
1.0
1.2
1.4
1.6
1.8
2.1
2.4
2.7
3.0
3.4
%T =
TJ
=
exp
((
-2790
Factor - q
TJ (%)
%T
75
80
85
90
95
100
105
110
115
3.8
4.3
4.8
5.3
5.9
6.6
7.3
8.0
8.8
1
TJ + 273
1
-ZE
))
Junction Temperature ~C)
Environment Factor - xc
~ - .00043(C)+
~.
.00009+
~C,
Environment
for Segment Displays
.00017(C)+
2.0
c=
Number of CharaAers
%-
.000043 for Displays with a Logic Chip
%
8.0
0.0 for Displays without Imgic Chip
Ns
5.0
-
NOTE: The numbar of characters in a display is the
number of characters mntained in a _
sealed
package. For example, a 4 character display
comprising 4 separately packaged single characters
mounted together would be tine
character dispiays,
not 1-four character display.
Quality Factor - ~
I
1.0
~C, Diode Array Displays
12
Nu
AC
4.0
‘IF
6.0
%c
6.0
*UF
8.0
17
Quality
lcQ
JANTXV
0.7
JANTX
1.0
JAN
2.4
Lower
5.5
Plastic
8.0
.50
MF
9.0
24
ML
450
Ci
6-20
----
------
--------
—
MIL-HDBK-217F
6.13
OPTOELECTRONICS,
LASER
DIODE
DESCRIPTION
laser Diodes with Optical Flux Densities
SPECIFICATION
MIL-S-19500
<3 MW/cr#
Cufrmt <25 ~
amt Fofward
Failures/l 06 Hours
Forward Cument Factor, I
q
Forward Peak Current (Anps)
Temperature Factor - XT
TJ (“C)
1.0
25
30
35
40
45
50
55
60
65
70
75
TJ
=
=
0.17
0.21
0.62
1.0
1.6
2.1
2.6
3.0
4.8
6.3
7.7
8.9
1.3
1.7
2.1
2.7
3.3
4.1
5.1
6.3
7.7
9.3
q
-
(1)”68
I
-
Fonnmrd Peak Currant (Amps), I $25
NOTE: For VariaMa Current Souroes, use the Initial
Current Value.
Application
exp
((
-4635
1
TJ + 273
- ~
x~
1
))
Pulsed
1
JunctionTemperature(“C)
4.4
.32
.45
.55
.63
.71
.77
.84
.89
.95
.1
.2
.3
.4
::
.7
.8
.9
Quality Factor - ~
Quality
Factor %A
Duty Cydo
Application
XT
~
.050
.075
.1
.5
1.0
2.0
3.0
4.0
5.0
10
15
20
1-
Hermetic Package
1.0
Nonhermetic with Faoet Coating
1.0
Nonhermetic without Facet Coating
3.3
~A = 4.4, CW
%A = ~
Cycle
0-5,f%.i-d
NOTE: A duty cyclaof one in pulsed application
represents the maximum amount it can ba driven in
a pulsad mode. This is different from wntinuous
wave applicationwhich will not withstandpulsed
oparatingIavels on a continuousbasis.
-..
2
-----
--————
——4
I
J
MIL-HDBK-217F
.
..
OPTOELECTRONICS,
6.13
Power ~radation
LASER
—
DIODE
Environment Factor - fiE
Factor - np
I
Ratio P~P~
%p
.50
.53
,56
.59
.63
.67
.71
.77
.83
0.00
.05
.10
.15
.20
.25
.30
.35
.40
.45
.91
1.0
1.1
1.3
1.4
.50
.55
.60
.65
.70
.75
.80
.85
.90
.95
1.7
2.0
2.5
3.3
5.0
10
~
#
I
I
Environment
GB
GF
1
2 (1 -&
“PS
~
s .95
Ps =
Rated Optical Power Output (rnW)
Pr
Required Optical Power Output (mW)
=
NOTE: Each laser diode must be replaced when power
output falls to Pr for fai lure rate prediction to be valid.
6-22
I
I
ttE
1.0
2.0
GM
8.0
Ns
5.0
Nu
Ac
‘IF
%c
‘UF
‘RW
12
4.0
6.0
6.0
8.0
17
.50
SF
MF
ML
lcp =
[
9.0
24
450
9
1
MIL-HDBK-217F
DISCRETE
6.14
Idealty, device case temperatures should be detetined
Wl@me~.
D8Vb #.IndOn te~-m
iS then ~M~
TJ = Tc +
SEMICONDUCTORS,
TJ
DETERMINATION
from a detailed thermal anatysis of the
with tb folbwing relationship:
e~p
where:
TJ
=
Junction Temperature(%)
TC
=
Case Temperature (~).
tf no thermal analysis exists, the defautt case
temperatures shown in Table ~1 should be assumed.
Junction-to-Case Thermal Resistance (“CAN). This parameter should be
determhwd from vendor, military specffkation sheets or Table 6-2, whiohever is
greater. It may also be estimated by taking the mclpmcal of the reconvnended
&wa!lng Ieve!. For examp!e, a devtce derating reconxnendatton of .16 W“
wou!d
restAina6K
of6.250CAN.
lf6wcannot
bedetermhwd assurnea O~vabeof
7o”c/w.
P=
Device Worse Case Power Diss@ation (W)
The models are not applicable to devices at overstress conditions. If the calculated junction temperature
is greater than the maximum rated junction temperature on the MIL slash sheets or the vendor’s
specifications, whichever is smaller, then the device is overstressed and these models ARE NOT
APPLICABLE.
Table 6-1:
Default
Caee
Temperatures
Environment
I
(Tc)
for All Environments
TC (“C)
I
35
45
50
%
Ns
45
Nu
50
AC
60
‘IF
60
‘Uc
75
‘UF
75
*RW
SF
60
35
MF
50
ML
60
CL
45
MIL-HDBK-217F
6.14
Table
DISCRETE
6-2:
SEMICONDUCTORS,
Approximate
Juriction-to-Case
Devices
Package Type
TO-1
TO-3
TO-5
TO-8
TO-9
TO-12
TO-1 8
TO-28
TO-33
TO-39
T041
TO-44
T046
TO-52
TO-53
TO-57
TO-59
TO-60
TO-61
TO-63
To-66
TO-71
TO-72
TO-83
TO-89
TO-92
TO-94
TO-99
TO-126
TO-127
TO-204
TO-204AA
T i
OJC (“w
70
10
70
70
70
70
70
5
70
70
10
70
70
70
5
5
5
5
5
5
10
70
70
5
22
70
5
70
:
10
10
—
DETERMINATION
Thermal
In Varfous
Resistance
(6JC)
for
Semiconductor
Package Sizes”
Package Type
TO-205AD
TO-205AF
TO-220
Do-5
D07
Do-9
DO-13
DO-14
Do-29
Do-35
DO-41
DO-45
DO-204MB
DO-205AB
PA-42A,B
PD-36C
PD-50
PD-77
PD-180
PD-319
PD-262
PD-975
PD-280
PD-216
PT-2G
PT-6B
PH-13
PH-16
PH-56
PY-58
PY-373
Ok (%A#)
70
70
5
5
5
10
5
5
10
5
10
10
10
5
70
5
70
70
70
70
70
70
70
70
70
70
70
70
70
70
70
70
70
“When available, estimates must be based on military specification sheet or vendor vaiues, whichever
is higher.
6-24
OJC
MIL-HDBK-217F
6.15
DISCRETE
SEMICONDUCTORS,
EXAMPLE
Example
Given:
Silicon dual transistor (complementary), JAN grade, rated for 0.25 W at 25”C, one side
onty, and 0.35 W at 25”C, both sides, with TM
= 2000C, operating in linear service at
55°C case temperature in a sheltered naval environment. Side one, NPN, operating at
0.1 W and 50 percent of rated voltage and side two, PNP, operating at 0.05 W and 30
percent of rated voltage. The device operates at iess than 200 MHz.
Since the device is a bipolar dual transistor operating at low frequency (c200 Miiz), it falls into the
Transistor, Low Frequency, Bipoiar Grwp and the appropriate modei is given in %ction 6.3. Since the
device is a dual device, it is necessary to compute the faiiure rate of each side separately and sum them
OJc
k
uf’k~wn,
OJc
= 70%/w
~i~
be
a~md.
t~e{k.
Also, si~
Based on the given information, the following model factors are determined from the appropriate
shown in Section 6.3.
tables
.00074
2.2
s@O1, TJ=TC+eJC
2.1
Side 2, TJ = 55+ 70(.05) = 59°C
%55+70(
.1).62°c
1.5
.68
Using equation shown with XR tabie, Pr = .35 W
.21
Side 1, 5070 Voltage Stress
.11
Side 2, 3(I?% Voitage Stress
2.4
9
$
=
=
(.00074)(2.2)(1
.011 Faiiures/106
.5)(.68) (.21)(2.4)(9)
+ (.00074)(2.1)(1
.5)(.68) (.1 1)(2.4)(9)
Hours
6-25
MIL-HDBK-217F
TUBES,
7.1
ALL TYPES
EXCEPT
TWT AND
MAGNETRON
DESCRIPTION
All Types Except Traveling Wave Tubes and Magnetrons.
Includes Receivers, CRT, Thyratron, Crossed Field Amplifier,
Pulsed Gridded, Transmitting, Vidicons, Twystron, Pulsed
Klystron, CW Klystron
“
I
~
(Includes
Tube Type
= kb7cLnE
Both
Transmitting
Triode, Peak Pwr. s 200 KW, Avg.
Pwr, s 2KW, Freq. g 200 MHz
Tetrode & Pentode, Peak Pwr.
s 200 KW, Avg. Power 5 2KW,
Freq. S 200 KW
If any of the above limits exceeded
Vidicon
Antimony Trisulfide (Sb2S3)
Photoconductive
Material
Silicon Diode Array Photoconductive
Material
Twystron
VA144
VA145E
VA145H
VA913A
Klystron, Pulsed”
4KMP1OOOOLF
8568
L3035
L3250
L3403
SAC42A
VA842
Z501OA
ZM3038A
●
06 Hours
Base Failure Rate - ~
and Wearout
Failures)
Rando[
Tube Type
Lb
Receiver
Tnode, Tetrode, Pentode
Power Rectifier
Thyratron
Crossed Field Amplifier
QK681
SFD261
Pulsed Gridded
2041
6952
Failures/l
Klystron, Low Power,
(e.a Local Oscillator)
5.0
10
50
260
150
140
390
75
100
250
51
48
850
450
490
230
43
230
66
69
93
100
18
150
190
If the pulsed Klystron of interest is not listed above,
use the Alternate Pulsed Klystron Ab Table on
the following page.
Klystron, Continuous Wave*
3K3000LQ
3K50000LF
3K21OOOOLQ
3KM300LA
3KM3000LA
3KM50000PA
3KM50000PA1
3KM50000PA2
4K3CC
4K3SK
4K50000LQ
4KM50LB
4KM50LC
4KM50SJ
4KM50SK
4KM3000LR
4KM50000LCI
4KM50000LR
4KM170000LA
8824
8825
8826
VA800E
VA853
VA856B
VA888E
●
30
9.0
54
150
64
19
110
120
150
610
29
30
28
15
38
37
140
79
57
15
130
120
280
70
220
65
230
If the CW Klystron of interest is not listed above,
use the Alternate CW Klystron ~ Table on the
following page.
MIL-I-IDBK-217F
7.1
TUBES,
ALL
TYPES
EXCEPT
TWT
AND
—
MAGNETRON
Attemate* Base Failure Rate for Pulsed Klystrons - A
Learning
F(GHz)
Zs!&!L
.2
.4
.6
.8
1.0
2.0
.01
.30
16
16
16
17
18
19
21
22
31
16
16
17
17
20
22
25
28
45
16
17
17
18
21
25
16
17
18
18
23
28
16
17
18
19
25
31
16
18
21
22
34
45
;:
25
28
51
75
30
35
40
63
110
34
60
40
75
45
90
75
160
.80
1.0
3.0
5.0
8.0
10
25
4.0
T (years)
I
;:
30
34
F
Operating Frequency in GHz, 0.2s Fs 6
10
2
2.3
>3
q
+2=
T
1.0
=
10(T) -2”’, 1 sT<3
=
=
10, TsI
1,T23
=
Numtw of Years since Introduction
to Field Use
Peak Output Power in MW, .01 s Ps 25 and
P-
‘L
<1
2.94 (F)(P) + 16
=
6.0
Factor - XI
P s 490 F-295
“See previous page for other Klystron Base Failure
Rates.
Environment
Factor - nE
Environment
GB
T
Aftemate” Base Failure Rate for CW Klystrons - ~
GM
3K!!!!L
0.1
14
N~
30
31
32
33
34
35
45
55
70
80
;;;
5.0
8.0
10
30
50
80
100
1.0
GF
31
32
33
34
35
36
46
56
71
81
33
33
34
35
37
38
48
58
73
34
34
35
36
38
39
49
59
38
39
40
41
42
43
47
48
49
50
57
57
58
66
66
Nu
8.0
24
%c
5.0
‘IF
8.0
%c
6.0
‘UF
‘RW
12
40
SF
%“
0.5P + .00046F + 29
P=
Average Output Power in KW, 0.1 s Ps 100
and Ps 8.0(10) 6( F)-1”7
F
=
Operating Frequency in MHz,
300s Fs8000
●See previous page for other Klystron Base Failure
Rates.
.20
MF
22
ML
57
CL
1000
MIL-HDBK-217F
7.2
TUBES,
TRAVELING
WAVE
DESCRIPTION
Traveling Wave Tubes
Xp = &E
Failures/l
06 Hours
Environment Factor - XF
Base Failure Rate - &
Power (W)
100
500
1000
3000
5000
8000
10000
15000
20000
30000
40000
.1
1
2
Environment
Frequency (G-Hz)
4
6
8
10
11
12 13
16
20 24
16
20 24
11
12 13
12 14
16
20 24
11
172125304465
12
13 14
12
13 15
18
22 26
19
23 20
13
14 16
14~5~62024293551
15
16 18
22
26 32
17
18 20
24
29 35
20
22 24
29
36 43
25
27 30
36
43 53
14
18
29
29
29
42
42
43
61
62
62
32
33
46
49
39
43
52
64
56
62
76
93
68
72
75
83
91
110
140
GB
1.0
GF
3.0
GM
Ns
11(1.00002)P
p.
Rated Power in Watts (Peak, if Pulsed),
.001< P s 40,000
F
=
(1.l)F
14
6.0
N“
21
%c
10
‘IF
‘Uc
%=
~E
14
11
‘UF
18
‘RW
40
.10
SF
MF
22
ML
66
CL
1000
Operating Frequency in GHz, .3s Fs 18.
If the operating frequency is a band, or two different
values, use the geometric mean of the end point
frequencies when using table.
/-3
MIL-HDBK-217F
7.3
TUBES,
—
MAGNETRON
DESCRIPTION
Magnetrons, Pulsed and Continuous Wave (CW)
7c@@E
%=%
Failures/l
06 Hours
Base Failure Rate - ~
.1
1.4
1.9
2.2
2.8
3.1
3.5
4.4
Qs!!?!m
.01
.05
.1
.3
.5
1
3
Pulsed
.5
4.6
6.3
7.2
9.0
10
11
14
1
7.6
10
12
15
17
19
24
5
24
34
39
48
54
62
77
10
41
56
64
80
89
100
130
20
67
93
110
130
150
170
210
Magnetrons:
I
.73 ~pl.20
%) =
Frequency (GHz)
30
40
50
91
130
110
120
150
180
140
180
210
180
220
260
200
240
290
230
280
330
350
280
410
‘9(F)
F
=
Operating Frequency in GHz,
.1 s Fs 100
P
=
Output Power in MW,
.ol<p~5
I
.44
.50
.55
.61
0.4
.66
.72
.78
.83
.89
.94
0.5
0.6
0.7
0.8
0!9
1.0
=
0.44 + 0.56R
R
=
Radiate Hours/Filament
Hours
Factor - mr
nc
1
GB
1.0
GF
2.0
GM
4.0
N~
15
Nu
47
*IC
10
‘IF
16
*UC
12
‘UF
23
*RW
80
1.0
nu
90
200
280
320
400
440
510
630
I
Environment
7CU
80
190
260
290
370
410
470
580
A@8
Environment
0.0
0.1
0.2
0.3
70
170
230
270
330
370
420
530
CW Magnetrons (Rated Power < 5 KW):
Utilization Factor - q I
Utilization (Radiate Hours/
Filament Hours)
60
150
210
240
300
330
380
470
.50
Construction
Construction
Factor - m
u
XC
MF
43
ML
133
c,
CW (Rated Power< 5 KW)
1.0
Coaxial Pulsed
1.0
Conventional Pulsed
5.4
/-4
2000
100
220
300
350
430
480
550
680
MIL-HDBK-217F
8.0
LASERS,
INTRODUCTION
. .
, i.e., those items
The models and failure rates presented in thk section apply to ~
wherein the Iasing action is generated and controlled. In addition to laser peculiar Items, there are other
assernbhes used with lasers that contain electronic parts and mechanical devices (pumps, valves, hoses,
etc.). The failure rates for these parts should be determined with the same procedures as used for other
electronic and mechanid
devices in the equipment or system of which the laser is a part.
The laser failure rate models have been developed at the “functional,” rather than ‘piece part” level
because the available data were not sufficient for “piece part” model devebpment.
Nevertheless, the
laser functional models are included in this Handbook in the interest of completeness.
These laser
models will be revised to include piece part modek and other laser types when the data become available.
Because each laser family can be designed using a variety of approaches, the failure rate rnodets have
been structured on three basic laser functbns whii
are common to most laser families, but may differ in
the hardware knplernentation of a given function. These functions are the Iasing rneda, the laser pumping
mechanism (or pump), and the coupfing method.
Examptes of media-related hardware and reliability Influencing factors are the solid state rod, gas, gas
pressure, vacuum integrity, gas mix, outgassing, and tube diameter.
me electrical discharge, the
flashlamp, and energy level are exarr@es of pump-related hardware and reliabilii influencing factors. The
coupling function reliability influencing factors are the “Q” switch, mirrors, windows, crystals, substrates,
coatings, and level of dust protection provided.
Some of the laser models require the number of active optical surfaces as an input parameter. An active
opticai surface is one with which the laser energy (or beam) interacts. internally reflecting surfaces are not
counted. Figure 8-1 below illustrates examples of active optiil suffaces and count.
Tot*
wloclw9 Mnuf
cho ActhmQxkalsurb20
+
Pdult
—.
b@u
Figure
8-1:
*am
Examples
of Active
Optical
Surfaces
8-1
I
MIL-HDBK-217F
8.1
LASERS,
HELIUM
AND
ARGON
DESCRIPTION
Helium Neon Lasers
Helium Cadmium Lasers
Argon Lasers
~
= ‘MED,AZE
+ ‘COUPLING
n E Failures/l
06 Hours
..“
Environment Factor - n=
Lasing Media Failure Rate - kMEDIA
Type
‘MEDIA
b
~E
Environment
.30
GB
He/Ne
84
He/Cd
228
Argon
457
GF
1.0
GM
4.0
N~
3.0
Nu
4.0
%c
%
Coupling Failure Rate - ~0[
----- lpi ,NG
...—
Types
%OUpLING
Helium
0
Argon
6
‘Uc
4.0
6.0
7.0
‘UF
9.0
‘RW
5.0
.10
SF
NOTE: The predominant argon laser failure
mechanism
is related to the gas media (as reflected
in XMEDIA; however, when the tube is refilled
periodically (preventive maintenance) the mirrors
can be expected to
(as part of ~OUpLIN@
deteriorate after approximately 104 hours of
operation if in contact with the discharge region.
‘COUPLING
8-2
is negligible for helium lasers.
MF
3.0
ML
8.0
CL
NIA
MIL-HDBK-217F
●-”
“
8.2
LASERS,
CARBON
DIOXIDE,
SEALED
DESCRIPTION
C02 Sealed Continuous Wave Lasers
Lasing Media FaiWe Rale - ~DM
Tube Current (rnA)
I
10
20
30
40
50
100
-.
%UEDIA
240
930
1620
2310
3000
6450
~S
Surfaces
‘0s
1
1
2
2
- Numbr
of Active Optical SUrfaces
NOTE: Only *ive optical surfaoss ars
counted. An active optical surfaca is one with
%tEDIA - 69(1)-‘0
l= Ttitimti(mA),
Active OptW
whiohth.laser anorgyorbwn~
Internallyreflecting surfaces are not oounted.
Sae Fquro 8-1 for exampleson datorminingthe
10s Is15O
number of optical surfaces.
Gas Overfill Factor = *
C02 Overfill Percent (%)
%0
Environment Faotor - XE
o
%-1
1.0
Environment
%E
.30
25
.75
%3
50
.50
%
1.0
GM
4.0
Ns
3.0
-.01 (%0Overfill)
Overfill percent is based on the psrwnt increase
Nu
4.0
ovsr the o@imum002 partialpssure which is
(llm=l
normalIyintherango ofl.5t03Tm
AC
4.0
mm Hg Prassure) for mostsealad C02 lasers.
‘IF
6.0
*UC
7.0
*UF
9.0
‘RW
5.0
Peroent of BaJlast
Vohmetric Increase
o
50
100
150
200
sF
1.0
.58
.33
.19
.11
.10
hu~
3.0
ML
8.0
c’
WA
n~ - (1~) (% Vol. Inc./l 00)
U-3
MIL-HDBK-217F
8.3
LASERS,
CARBON
—
DIOXIDE, FLOWING
DESCRIPTION
C02 Flowing Lasers
+J = &JpLIN&OS
x E Failures/l OGHours
Environment
Coupling Failure Rate - XCWPL,NG
Power (KW)
%OUpLING
I
.01
.1
2
I
1.0
Factor - XE
fiE
Environment
.30
GB
300
GF
1.0
GM
4.0
Ns
3.0
NU
4.0
*IC
4.0
Beyond the 1KW range other glass failure mechanisms
b~in to predominate and alter the ~OUpLING
‘IF
6.0
%OUPUNG”
P _ Aver-
3WP
PowerOutputin KW, .01 s Ps 1.0
values.
It should also be notedthat C02 flowinglaser optical
devices are the primary source of failure occurrence.
A tailored optical cleaning preventive maintenance
program on optic devices greatty extends iaser fife.
*UC
7.0
*UF
9.0
*RW
5.0
.10
SF
Optical Surface Factor - ~S
Active Optical Surfaces
I
3.0
ML
8.0
CL
‘0s
1
1
2
2
XOS - Number of Active Opticai Surfaces
NOTE: Oniy active optical surfaces are counted.
An active opticai surface is one with which the iaser
energy or beam interacts. Internally reflecting
surfaces are not counted. See Figure 8“1 for
exampies on determining the number of opticai
surfaces.
8-4
MF
NIA
,..
*
MIL-HDBK-217F
LASERS,
8.4
STATE,
SOLID
ND:YAG
DESCRIPTION
Neocfymium-Ytt~m-AbminurnGamet
AND
RUBY
ROD
(ND:YAG) Rod Lasers
Ruby Rod Lasers
+)= ( ‘p”~~ +‘MEDIA
+ 16.3 xc~s)
fXannn
1
--------
The empiricalfmula
IKnmtnn
,.
... ~.-.. Ftaehla~}
.
Fla=hlarrmm\
.
---
. .
.
.
.-w.
.-,
Ktypton lamp is:
~p
= @~)
(PPS) 2000
[
k
(d,k)
8058
PPS
is the repetition pulse rate in pulses per
1[km] Failures/l
is the fkwhlamp or flashtube input energy
per pulse, in joules. Its value is determined
from the actual or desgn input energy . For
values less than 30 @Jes, use Ej = 30.
Default value: E = 40.
j
is the average input power in Idbwatts.
Default value: P =4.
L
is the flashlamp or flashtube arc length in
inches. Defautt value: L -2.
Zca
is the woling factor due to various cooling
media immediately surrounding the flashlamp
or fkht~.
~~L
= 1 for a~ air or inert
gas cooling. n-
-.1
for all liquid
cooled.
L
is the flashlamp or flashtube arc length in
inches. Default value: L = 2.
Meda Failure Rate - ~EDiA
t
is the truncated pulse width in
microseconds. Use t -100 microseconds
for any truncatd pulse width exceeding 100
microseconds. For shotier duration pulses,
pulse width is to be measured at 10 percent
of the maximum current amplitude. Defautt
value: t = 100.
designs. Defautt va!ue: ~c~L
is the cooling factor due to various cooling
media immediately surrounding the
flashlamp or flashtube, ~~~L
= 1.0 for
any air or inefl gas cooling, ~C@L
= .1 for
ail liquid cooled designs. Default value:
‘COOL
06 Hours
P
is the flashlamp or flashtube inside
diameter, in millimeters.
Default value: d = 4.
xc~L
for
evalutad herein are the continuouswave
(CW) type and are most widely used for
commercial solid state applkations. They
are approx-imatety7mm in diameter and 5 to
6 inches brig.
second. Typbal values range between 1
and 20 pulses per second.
d
.~v,
is the failure me contributionOf the krypton
flashlamp or flashtube. me flashlamps
kpUMp
k the failure rate contribution of the xenon
flashlamp or flashtube. The flashlamps
evaluated herein are linear types used for
military solid state laser systems. Typical
defautt model parameters are given below.
Ej
- [625][,0(”$’9
] ~nm,
@lJfvIp
..-.
The empirical formula used to determine *MP
used to determine ~UMp
(Failures/1@ Hours) for Xenon lamps is:
+WMP
06 Hours
Pump Pulse Failure Rate - kpUM@
Pump Pulse Failure Rate - kpuMp
I
~E Failures/l
Laser Type
‘MEDIA
ND:YAG
)
R~
= .1, liquid
o
_
(3600) (PPS) [43.5 F2052~
PPS
is the number of pulses per second
F
is the energy density in Joules per cm. z/pulse
over the cross-sectional area of the laser
beam, which is nominalty equivalent to the
cross-sectional area of the laser rod, and its
value is determined from the actual design
parameter of the laser rod utilized.
= .1, Iquid cooled.
NOTE: ~MEDIA is negligible for ND:YAG lasers.
8-5
I
MIL-HDBK-217F
LASERS,
8.4
SOLID
STATE,
ND:YAG
%
1
Rk3#ltml#c&&s ~-r~d.
~
BOUOWB
provided over
tin.
Mln&nalprmXw$Orwdwing opaning,
makltananoe, mpdr, and testing.
Bellows prddad Ovw Optkat train.
30
duringopening,
Minimal pr~ons
mdntorumca, repair,and ta8drg. No
60
tx?lbw, prOvWxfOvu ~
RUBY
—
ROD
Environment Factor “ ~E
—
CouplingCleadinassFactor - -z
CleardinessLovd
AND
train.
Environment
GB
Optioal Surfaoe Factor - ~S
Active Optical Surfaces
~s
‘0s
1
1
2
2
= Numbr of ActiveOptical Surfaces
NOTE: Only activeoptioalsurfmmsare munted.
Anactiveopticalsurfaceis one withwhid the iaser
energyor beam interacts.Internallyreflecting
surfacesare notcxxmted.See Figure8-1 for
examphw on dettinlng
surfaces.
8-6
the number of OPUcat
.30
GF
1.0
GM
4.0
Ns
3.0
Nu
4.0
Ac
4.0
AF
6.0
%c
NOTE: Mhoughsodod qsternstendmberelMle
OnoeCompatible
materialshavebeenSeh30ted
and
proven,extremecaremuststtltbe takento prevsnt
theentranoeof partkdatesduringmanufacturing,
field ftashlamp repkemmt, or routine maintenance
repair. Contamhatkm is the major cause of solid
state lasermatfurx3ion, and spedal provlsbns and
vigilanoe must oontirwalty be provided to maintain the
deanllness level required.
%E
7.0
‘UF
9.0
‘RW
5.0
SF
.10
MF
3.0
ML
8.0
CL
N/A
,,,
.
9
.
.
MIL-HDBK-217F
9.0
RESISTORS,
INTRODUCTION
This section includes the active resistor specificationsand, in addition, some eider/inactive specifications
are included because of the large number of equipments stilt in field use which oontain these parts.
The Established Reliability (ER) resktor family generaity has four qualification failure rate levels when
tested per the requirements of the appikabie specification. These quaiiitbn
failure rate levels difier by
a factor of ten (from one level to the next). However, field data has shown that these failure rate levels
differ by a factor of about only three, hence the ~ values have been set accordingly.
The use of the resistor modek requires the calculation of the electrfcat power stress ratio, Stress =
-~
Pow@r/~t~~er,orPr~9.16
for variable msktors. The models have been structured
such that derating curves do not have to be used to find the base failure rate. The rated IXWer for the
stress ratb is ~al
to the full nominal rated power of the resistor. For example, a MlL-R_
resistor has
the foiiowing derating cume:
100
80
60
40
20
0
40
0
80
120
AMBlENT TEMPERATURE
DEGREES CELSIUS
Figure
9-1:
MIL-Ft-39006
IN
Deratlng
Curve
This particular resistor has a rating of 1 watt at 70”C arrtknt, or below. If Itwere behg used in an an’k#ent
temperature of 10O°C, the rated power for the stress calculation would still be 1 watt, ~ 45% of 1 watt (as
read off the curve for 100*C). Of course, while the deratlng cuwe k not needed to determine the base
failure rate, it nmst still be observed as the maxinum operating condtbn. To aid in detenMing if a resistor
is being used within rated conditions, the base failure rate tables show entries up to certain combinations
of stress and temperature.
If a given operating stress and temperature point faits in the blank portion of
the base failure rate table, the resistor is ovemtmssed.
Such wisappfbatbn wouid require an anatysis of
the circuit and operating conditions to bring the resistor within rated conditions.
9-1
I
-----
MIL-I+DBK-217F
9.1
RESISTORS,
FIXED,
SPECIFICATION
MIL-R-39008
MIL-R-11
COMPOSITION
DESCRIPTION
Resistors, Fixed, Composition (Insulated), Established Reliability
Resistors, Fixed, Composition (Insulated)
STYLE
RCR
RC
Xp s kbXRXQnE Failures/l OGHours
Base Failure Rate - ~
Quality Factor - ~
stress-
TA (%)
0
10
20
30
40
50
60
.00007
.00011
.00015
.00022
.00031
.00044
.00063
.00090
.0013
.0018
.0026
.0038
.0054
;:
90
100
110
120
Quality
.3
.5
.7
.9
.00010
.00015
.00022
.00031
.00045
.00066
.00095
.0014
.0020
.0029
.0041
.0060
.00015
.00021
.00031
.00046
.00067
.00098
.0014
.0021
.0031
.0045
.0065
.00020
.00030
.00045
.00066
.00098
.0014
.0021
.0032
.0047
.00028
,00043
.00064
.00096
.0014
.0021
.0032
,0048
.1
7CQ
s
.03
R
0.1
P
0.3
M
1.0
MlL-R-l 1
5.0
15
Lower
Environment Factor - ~E
—
%=4.5x
10-gexp
(
12
Environment
(W))exff?(-))
T=
Ambient Temperature (“C)
s=
Ratio of Operating Power to Rated Power
~E
GB
1,0
GF
3.0
GM
8.0
Ns
5.0
Nu
Resistance Factor - ~R
Resistance Range (ohms)
<.l
M
>.l
Mtol
>l.OMtol
>1OM
~R
1.0
M
OM
1.1
13
‘Ic
4.0
‘IF
5.0
%c
7.0
*UF
11
‘RMI
19
1.6
SF
2.5
MF
11
ML
27
CL
490
b
.50
9-2
——-- -—
1-
r.llauLe
Lila
L
aullclllu
LAG
u&uw*,
.y”
*u
b..*--
~-----
MIL-HDBK-217F
9.2
SPECIFICATION
MIL-R-39017
MIL-R-22684
MIL-R-55182
MIL-R-105O9
RESISTORS,
FIXED,
FILM
DESCRIPTION
Fixed, Film, Insulated, Established Reliability
Fued, Film, Insulated
Fixed, Film, Established Reliability
Fixed, Film, High Stability
STYLE
RLR
RL
RN (R, C, or N)
RN
Failures/l OG Hours
Base Failure Rate - ~
Base Failure Rate - ~
[MIL-R-1 0509 and MIL-R-551 82)
IMIL-R-22684
and MIL-R-990171
....—.- ——
-- ----...._ .._ --- .
I
TA (%)
.1
.3
.5
.7
0
.00059
.00073
.00089
.0011
.0013
10
.00063
.00078
.00096
.0012
.0014
.9
20
.00067
.00084
.0010
.0013
.0016
30
.00072
.00090
.0011
.0014
.0018
40
.00078
.00098
.0012
.0016
.0019
50
.00084
.0011
.0014
.0017
.0022
60
.00092
.0012
.0015
.0019
.0024
70
.0010
.0013
.0017
.0021
80
.0011
.0014
.0018
.0024
90
.0012
.0016
.0021
.0027
100
.0013
.0018
.0023
110
.0015
.0020
.0026
120
.0017
.0023
TA (Z:
o
.0027
.0019
140
.0022
-
~=3.25x
T
=
S =
104 .xp(*)’exf(=))
.3
.00061
.5
.00074
.00091
.7
.9
.0011
.0014
10
.00067
.00082
.0010
.0012
.0015
20
.00073
.00091
.0011
.0014
.0017
30
.00080
.0010
.0013
.0016
.0019
40
.00088
.0011
.0014
.0017
.0022
50
.00096
.0012
.0015
.0020
.0025
60
.0011
.0013
.0017
.0022
.0028
70
.0012
.0015
.0019
.0025
.0032
80
.0013
.0016
.0021
.0028
90
.0014
.0018
.0024
.0031
F
.0040
100
.0015
.0020
.0026
.0035
.0045
110
.0017
.0022
.0029
.0039
.0051
120
.0018
.0024
.0033
.0043
.0058
150
z~~
.0024
.0033
=;
0065
160
.0026
.0036
170
.0029
F
130
140
130
.1
~=
5x10-5exp
.0045
(“(=Y”XPP
(-))
35
T.
Ambient Temperature (°C)
s.
Ratio of Operating Power to Rated Power
Ambient Temperature (oC)
Ratio of Operating Power to Rated Power
NOTE: Do not use MlL-R-l 0509 (Characteristic B)
below the line. Points below are overstressed.
9-3
I
I
MIL-HDBK-217F
9.2
RESISTORS,
FIXED,
FILM
Resistance Factor - ~n,,
Resistance Range (ohms)
lc~
Environment Factor - ~
b
Environment
<.l M
1.0
GB
1.0
>().lMtOIM
1.1
GF
2.0
>l.OMtol
OM
8.0
1.6
Ns
>IOM
2.5
QuaJ-~ Factor - ~
Quality
lt~
s
.03
Nu
4.0
14
*IC
4.0
‘IF
8.0
*UC
10
*UF
18
%+/v
19
R
0.1
P
0.3
MF
10
M
1.0
ML
28
MlL-R-l 0509
5.0
MIL-R-22684
5.0
Lower
9-4
~E
15
SF
c,
.20
510
I
MIL-HDE3K-217F
9.3
SPECIFICATION
MIL-R-11804
RESISTORS,
RD
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
&
%=
.3
.0089
.0090
.0092
.0094
.0096
.0098
.010
.010
.010
.011
.011
.011
.012
.012
.012
.013
.013
.014
.014
.015
.015
.016
.0098
.010
.010
.010
.011
.011
.011
.012
.012
.012
.013
.013
.014
.014
.014
.015
.016
.016
stress
.5
QuaIii
-
.011
.011
.012
,012
.012
.013
.013
.014
.014
.015
.015
.016
.016
.017
Factor - ~
Quality
.7
.9
.013
.013
.014
.014
.015
.015
.016
.016
.017
.015
.015
.016
.017
.017
%Q
!
I
I
\
MIL-SPEC
Lower
II
I
3.0
Environment Factor - x=
Environment
GB
2.0
GF
GM
NU
202
(-
I
1.0
10
5.0
Ns
7.33 x 10-3 exp
(*)2’)
x
,
‘xp((~)
POWER
OGHours
Base Failure Rate - ~
.1
FILM,
DESCRIPTION
Fued, Film, Power Type
STYLE
Ap = kb7cRz*7cE Failures/l
TA (%)
FIXED,
17
*IC
6.0
‘IF
8.0
*UC
14
*UF
18
‘RW
25
.50
SF
(=)”8’)’3
T=
Ambient Temperature (“C)
MF
14
s=
Ratio of Operating Power to Rated Power
ML
36
C’
660
Resistance Factor - ZR
Resistance Range (ohms)
x~
lo to 100
> 100to
>lOOKtol
>lM
1.0
100K
M
I
I
I
I
1.2
1,3
3.5
9-5
---
i’”’
.
.
MIL-HDBK-217F
9.4
RESISTORS,
NETWORK,
SPECIFICATION
MIL-R-83401
FIXED,
FILM
STYLE
Rz
~=
Temperature
DESCRIPTION
Resistor Networks, Fixed, Film
.00006 ~ ZNRZQXE Failures/106 Hours
Factor - XT
.
Quality Factor - ~
Quality
TC (Z)
1.0
1.3
1.6
1.9
2.4
2.9
3.5
25
30
35
40
45
50
55
60
80
85
90
95
100
105
110
115
120
125
4.2
5.0
%
75
6.0
7,1
\“
I
8.3
9.8
11
13
15
18
21
24
I
MIL-SPEC
Lower
Envirmment
)
=
2.0
GM
8.0
N~
4.0
‘Uc
TC
=
TA + 55 (S)
TA
=
Ambient Temperature (°C)
Operating Power
Package Rated Power
‘NR = Number of Film Resistorsin Use
I
Do not include resistors that are not used.
4.0
8.0
9.0
‘UF
18
‘RW
19
I
.50
MF
14
ML
28
c,
Number of Resistors Factor - ~NR
9-6
14
SF
Any device operating at TC > 125°C is overstressed.
NOTE:
~E
GF
‘IF
If Tc is unknown, it can be estimated as
follows:
I
Factor - n=
Case Temperature (“C)
NOTE:
I
3
1.0
‘Ic
s=
“1
GB
Nu
Tc
I
I
Environment
27
31
7CQ
!
510
1
MIL-HDBK-217F
9.5
SPECIFICATION
MIL-R-39005
MIL-R-93
RESISTORS,
FIXED,
WIREWOUND
DESCRIPTION
Fixed, Wlrewound, Accurate, Established Reliability
Fixed, Wirewound, Accurate
STYLE
RBR
RB
Xp = lbnRZQnE Failures/l OGHours
Quality Factor - ~
Base Failure Rate - ~
str13s .1
.3
.0033
.0033
.0034
.0034
.0035
.0037
.0038
.0041
.0044
.0048
.0055
.0065
.0079
.010
.014
.0037
.0038
.0039
.0040
.0042
.0043
.0046
.0049
.0053
.0059
.0068
.0080
.0099
.013
TA (W)
0
%
30
40
50
60
70
80
90
100
110
120
130
140
.5
.0CM5
.0047
.0048
.0050
.0052
.0055
.0059
.0064
.0070
.0079
.0092
.011
.014
.018
.7
.0s7
.0059
.0062
.0066
.0070
.0075
.0081
.0089
,0099
.011
.013
.016
.021
.028
Quality
7tQ
s
.030
R
.10
P
.30
.9
.0075
.0079
.0084
.0090
.0097
.011
.012
.013
.015
.017
.020
.025
.033
M
1.0
MIL-R-93
5.0
Lower
15
Environment Factor - XE
m
Environment
~.
.0031 exp
(T+273)loexpp(T;g3)
398
)15
GB
GF
T-
Ambient Temperature (oC)
GM
s=
Ratio of Operating Power to Rated Power
N~
Resistance
Resistance
>lOOKtol
>IM
~R
1.0
Up to 10K
> 10Kto
Factor - ~R
Range (ohms)
100K
M
1.7
3.0
5.0
2.0
11
5.0
Nu
18
AC
15
‘IF
18
*UC
28
*UF
35
%w
27
.80
SF
MF
14
ML
38
c,
610
9-7
I
4
,, . .
.
.
.
,,
.
MIL-HDBK-217F
9.6
RESISTORS,
FIXED,
WIREWOUND,
SPECIFICATION
MIL-R-39007
MIL-R-26
POWER
STYLE
~
=
DESCRIPTION
Fixed, WireWound, Power Type, Established RelkbNty
Fixed, Wirewouruf, Power Type
hb7c#Q7t~ Failures/l OGHours
Base Failure Rate - &.
Stress
TA (“C)
.1
.3
.5
Resistance Factor - ZR
.7
.9
1:
20
30
40
.0042
.0045
.0048
.0052
.0056
.0062
.0068
.0074
.0081
.0089
.0093
.010
.011
.013
.014
.014
.016
.017
.020
.022
.021
.024
.027
.031
.035
50
60
70
80
90
100
.0081
.0066
.0072
.0078
.0085
.0093
.0097
.011
.012
.013
.014
.016
.016
.017
.020
.022
.025
.028
.025
.028
.032
.037
.042
.048
.ti–
110
120
130
140
150
.010
.011
.012
.014
.015
.018
.020
.022
.025
.028
,031
.036
.040
.046
.052
.055
.063
160
170
180
.032
,036
.040
.046
.052
.060
.068
.078
X%
.017
.019
.021
.023
.026
210
220
230
240
250
.029
.033
.037
.042
.047
.059
.068
.077
.088
,10
260
270
280
290
300
310
.054
.061
.06
.079
.091
.10
~-M148eXP(~)2ex@)
(MIL-R-39007)
Re istan ) Ra[
up ●s00
bsoc
1:
Siyte
z
7!3(
*75
KkJ
1*
>19(
>Iw
I&
&
1.0
1.0
1.2
1.2
1.6
1.6
1.6
NA
1.0
1.0
1.0
1.2
1.6
1.6
NA
N/l
1.0
1.0
1.0
1.0
1.2
1.2
1.2
1.6
1.0
1.2
1.6
1.6
NA
NA
NA
NA
1.0
1.6
NA
NA
NA
NA
NA
NA
1.0
1.6
1.6
NA
NA
NA
NA
NA
1.0
1.0
1.1
1.2
1.2
1.6
NA
NA
1.0
1.0
1.4
NA
NA
NA
NA
MA
74
78
80
81
82
84
89
Quality Factor - nQ
Quality
KQ
s
.03
R
.10
P
.30
(=))
T=
Ambient Temperature (“C)
s=
Ratio of Operating Power to Ftatad Power
NOTE: Do not use MlL-R-39oo7 Resistors below the
line. Points below are overstressed.
--
s
I
*
71
M
1.0
MIL-R-26
5.0
Lower
Y-u
>1K
w
15
MIL-HDBK:217F
9.6
Resistanm
10
Rwll
Rw
RW12
Rw 13
Rw 14
Rw 15
RW16
RW20
Rw 21
KE
RW 24
RW 29
RW30
Rw 31
RW32
ZE
EE
Rw 37
E:
Rw 47
RW55
RW56
RW 67
l%:
Rw 70
Rw 74
Fw 70
R:
RW 81
up
s
100
1.0
t .0
1.0
1.0
1.0
1.0
1,0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Environment
I
>100
m
IK
>1K
to
ICM
100K
1.0
1.0
1.0
1.0
1.0
1.0
1.2
1.0
1.0
1,0
1.0
1.0
1.0
1.2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.2
1.0
1.0
1.0
1.2
1.2
1.0
1.0
1.0
1.2
1.0
1.0
1.2
1.6
2.0
2.0
2.0
NA
NA
2.0
1.6
1.4
1.2
;::
1.6
1.2
1.2
1.0
1.0
1.4
1.6
1.4
1.2
1.0
1.0
1.0
1.2
1.2
1.0
1.0
1.0
1.4
1.2
1.0
1.0
NA
1.4
;::
1.4
1.6
NA
>1OK
to
I&
NA
NA
1.4
1.4
1.4
1.5
1.6
1.4
1.4
1.4
2.4
2.6
FIXED,
WIREWOUND,
POWER
Environment Factor - ~
Factor - XR
(MIL-R-2
Resistance mge
MIL-R-26
RESISTORS,
~E
]ms)
*la
b
I!iw
>150K
J%
GB
1.0
GF
2.0
%
10
1.2
1.6
M
1.6
NA
NA
E
E
E
NA
NA
NA
NA
NA
K
NA
WA
NA
NA
NA
K
NA
NA
E
NA
NA
SF
MF
13
$
NA
NA
NA
1.6
1.6
1.6
NA
E
NA
ML
34
CL
610
NS
NU
$
NA
2.0
2.0
NA
NA
5.0
16
‘Ic
4.0
‘IF
8.0
‘Uc
9.0
*UF
18
‘Rw
23
.30
K
E
NA
W
1.6
1.6
NA
NA
NA
E
NA
E
NA
E
K
NA
NA
K
K
NA
9-9
MIL-HDBK-217F
9.7
.
FIXED,
RESISTORS,
WIREWOUND,
SPECIFICATION
MIL-R-39009
STYLE
RER
MIL-R-18546
RE
POWER,
CHASSIS
DESCRIPTION
Fixed, Wirewound, Power Type, Chassis Mounted,
Established Reliability
Fixed, Whewound, Power Type, Chassis Mounted
Resistance Factor - ZR
Base Failure Rate - ~
stress
TA (Z)
.1
.3
(Characteristic G (tnductive Winding ti MlL-R-l 8546 and
lL-R- 1009)
Kmotr
hms
mos I 10
+*1
T
+
Rated
XIK
c)
to
Styte Powar
2%
IK
IOK
z
.5
MOUNTED
.7
0
.0021
.0032
.0049
.0076
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
.0023
.0025
.0020
.0031
.0034
.0037
.0041
.0045
.0050
.0055
.0060
.0066
.0073
.0081
.0089
.0098
.011
.012
.013
.014
.016
.017
.019
.021
.023
.0036
.0040
.0045
.0050
.0056
.0063
.0070
.0079
.0088
.0098
.011
.012
.014
.015
.017
.019
.022
.024
.027
.030
.0056
.0064
.0072
.0082
.0093
.011
.012
.014
.016
.018
.020
.023
,026
.030
.034
.0087
.0100
.012
.013
.016
.018
.021
.024
.028
.032
.9
.012
.014
.016
.019
.022
.026
T=
Ambient Temperature (“C)
s=
Ratio of Operating Power to Rated Power
5
1.0
1.2
1.2
1.6
NA
NA
RE 65
RER65
10
1.0
1.0
1.2
1.6
NA
NA
RE 70
RER70
20
1.0
1,0
1.2
1.2
1.6
NA
RE 75
RER75
30
1.0
1.0
1.0
1.1
1.2
1.6
RE 77
75
1.0
1.0
1.0
1.0
1.2
1.6
RE 80
120
1.0
1.0
1.0
1.0
1.2
1.6
I
Resistance Factor - XR
(Charaderistic N (NoninductiveWinding)of MIL-R-18546
and Noninc ctively Woun Styles of MIL 3-39009)
Resi: mce Ran e
Raled
4
~ = .00015 exp 2.64
(
(%)ex(a’a)
RE 60
RER60
Styb
Ptxer
-qr
52)
T!mi 4
to
lK
E
1;
20K
RE 60
RER40
5
1.0
1.2
1.6
NA
NA
NA
RE 65
RER45
10
1.0
1.2
1.6
NA
M
M
RE 70
20
1.0
1.0
1.2
1.6
NA
NA
30
1.0
1.0
1.1
1.2
1.4
NA
75
1.0
1.0
1.0
1.2
1.6
NA
120
1,0
1.0
1,0
1.1
1.4
NA
RER50
RE 75
RER55
RE 80
,,.
!.
.
MIL-HDBK-217F
9.7
RESISTORS,
FIXED,
WIREWOUND,
POWER,
MOUNTED
Environment Factor - ~
Quality Faotor - ~
Environment
Quality
s
.030
R
.10
P
.30
1,0
GF
2.0
GM
Ns
1.0
Nu
MIL-R-18546
5.0
AIc
15
~E
GB
M
Lower
CHASSIS
‘IF
‘Uc
*UF
‘RW
10
5.0
16
4.0
8.0
9.0
18
23
.50
SF
MF
13
ML
34
c~
610
9-11
MIL-FIDBK-217F
SPECIFICATION
M IL-T-23648
DESCRIPTION
Thermally Sensitive Resistor, Insulated, Bead, Disk
and Rod-Types
STYLE
RTH
Xp = &QzE
Failures/l OG Hours
Environment Factor - xz
Base Failure Rate - ~ —
L
Type
A~
Bead
(Styles 24, 26,28,30,32,
34, 36, 38, 40)
.021
Environment
GB
1.0
GF
5.0
%
Disk
(Styles 6,8, 10)
.065
Rod
.105
(Styles 12, 14, 16, 18,
20, 22, 42)
Quality
MIL-SPEC
Lower
9-12
21
Ns
11
Nu
24
‘Ic
11
‘IF
30
‘Uc
Quality Factor - fl~
~E
16
‘UF
42
‘RW
37
.50
SF
~Q
1
15
MF
20
ML
53
c,
950
. ..
.. .
*.
....,.
.,.
.. . .
i
.
.,, ..
. . . .. .
MIL-tiDBK-217F
1
9.9
I
SPECIFICATION
MIL-R-39015
STYLE
Iv-R
MIL-R-27208
RT
RESISTORS,
VARIABLE,
W! REWOUND
DESCRIPTION
Variable, Wtrewound, Lead Screw Actuated,
Established Reliability
Variable, Wkewound, Lead Screw Actuated
Xp = kbfiTAp~XRZvXQzE Failures/l OG Hours
Potentiometer Taps Factor - q~o=
Base Failure Rate - ~
snr
stress
.1
I
o
.0089
.0094
.010
.011
.012
.013
,014
.016
.018
.021
.024
.029
.035
.044
.056
;
30
40
50
60
70
80
90
100
110
120
130
140
l--
.3
.011
.012
.012
,013
.015
.016
.018
.020
.023
.027
.032
.038
.047
.059
.5
.7
.013
.014
.015
.017
.018
.020
.023
.026
.03
.035
.042
.051
.9
.016
.017
.019
.021
.023
.026
.029
.033
.039
.046
.055
.020
.021
.024
.026
.029
.033
.037
.043
.050
.060
N
TAPS
‘TAPS
3
4
5
6
7
a
9
10
11
12
1.0
1.1
1.2
1.4
1.5
1.7
1.9
2.1
2.3
2.5
2.7
2.9
3.1
3,4
3.6
3.8
4.1
4.4
4.6
4.9
g
N
TAPS
‘TAPS
23
5.2
5.5
5.8
6.1
6.4
6.7
7.0
7.4
7.7
8.0
z
E
::
30
31
32
2
.
%
-
T
-
Ambient Temperature (“C)
s
=
Ratio of Operating Power to Rated Power.
See Section 9.16 for Calculation of S.
0062”’’(=?’‘X’(S
(T=);
Resistance Range (ohms)
‘TAPS
13
14
15
16
17
18
19
20
21
22
=’
%APS
=
‘TAPS
=
2S
+ 0.792
Number of PotentiometerTaps,
includingthe Wiper and Terminations. ~
I
Voltage Factor - xv
Applied
Rated
Otoo.1
>0.1 to
>0.2 to
>0.6 to
>0.7 to
>0.8 to
>0.9 to
Resistance Factor - XR
I
N
TAPS
I
%
10t02K
1.0
>2K to 5K
1.4
>5K to 20K
2.0
w
Applied
Voltage*
Voltage
1.10
1.05
1.00
1.10
1.22
1.40
2.00
0.2
0.6
0.7
0.8
0.9
1.0
=
‘%
~RpApplied
R
=
Nominal Total Potentiometer
Resistance
‘Applied
=
Power Dissipation
‘Rated
-
v
Rated
=
40 Volts for RT 26 and 27
90 Votts for RTR 12, 22 and 24; RT 12
and 22
MIL-HDBK-217F
9.9
RESISTORS,
VARIABLE,
WIREWOUND
7
QualityFactor - nfi
Environment
u
Quality
L
%Q
I
s
.020
R
.060
Environment
1.0
GF
2.0
P
.20
Ns
M
.60
Nu
Lower
3.0
10
~E
%
%...
MIL-R-27208
Factor - KG
12
6.0
20
‘Ic
5.0
‘IF
8.0
‘Uc
9.0
‘UF
15
‘RW
33
.50
SF
MF
18
ML
48
cl
I
9-14
870
I
.!
/
.,,
MIL-HDBK-217F
1
9.10
SPECIFICATION
MIL-R-12934
RESISTORS,
VARIABLE,
Resistance Factor -
stress
o
E
30
40
50
60
70
80
90
100
110
120
130
140
.10
.11
.12
.13
.14
.15
.17
.19
.21
.24
.28
.33
.40
.49
.60
.3
.5
.7
.9
.11
.12
.13
.14
.16
.J7
.20
.22 ‘
.26
.30
.36
.44
.54
.13
.14
.16
.17
.20
.22
.26
.30
.36
.44
.54
.14
.15
.17
.19
.22
.26
,30
.36
.43
.54
.12
.13
.14
.15
.17
.19
.22
.25
.30
.35
.42
.52
.65
-.0735
exp ( 1.03
(~
1.0
>?OK to 20K
1.1
>20K to 50K
1.4
>50K to 10OK
2.0
to 200K
2.5
>100
K
to 500K
>200K
‘TAPS
)4.45)X
3.5
s.
(*)351)
Ratio of Operating Power to Rated Power.
See Section 9.16 for Calculating S.
?AP:
‘TAPS
TAPS
‘TAPS
;::
2.1
:::
3.6
3.8
4.1
4.4
5.2
5.5
5.8
6.1
6.4
6.7
7.0
7.4
:::
:;
:::
;;:
1.2
1.4
1.5
Ambient Temperature ~C)
N
13
14
15
16
17
18
19
20
1.1
T=
‘R
100 to IOK
1.0
exp((z%)
R
Resistance Range (ohms)
Potentbrneter Taps Factor \
PRECISION
DESCRIPTION
Variable, WIrewound, Precision
STYLE
RR
Base Failure Rate - ~
.1
WIREWOUND,
$:;
ConstructionClass Factor - z=
b
f
ConstructionClass
RR0900AZA9J1
03”
I
3
7K*
2.0
3
1.0
4
3.0
5
1.5
‘%APS
=
‘TAPS
-
M5
25
.(-),,,
.
Number of Potentiometer Taps,
including the W@er and Terminations.
“ Sample type designation to show how
construction class can be found, In this example
the construction cJass is 2. Construction class
should always appear in the eighth position.
MIL-HDBK-217F
RESISTORS,
9.10
VARIABLE,
WIREWOUND,
PRECISION
—
Vottage Factor - ~
Applied
Rated
o
Quality Factor - XQ
Voltage’
voltage
to 0.1
‘%
MIL-SPEC
2,5
Lower
5.0
1.10
>0.1 to 0.2
1.05
0.6
1.00
>0.2 to
UQ
Quality
Environment Factor - n=
>0.6 to 0.7
1.10
>0.7 to 0.8
1.22
GB
1.0
>0.8 to 0.9
1.40
GF
2.0
>0.9 to 1.0
2.00
GM
Environment
L
18
Ns
“v
Applied
==
RP
-
‘Applied
v
Rated
9
=
Nu
Nominal Total Potentiometer
Rated
‘Rated
.
-
8.0
*IC
‘IF
12
*UC
13
Power Dissipation
*UF
18
*RW
53
250 Votts for RR0900, RRI 100,
423 Volts for RR3600, RR3700
500 Votts for RR1 000, RR1 400,
RR21 00, RR3600, RR3900
9-16
30
Resistance
RR1300, RR2000, RR3000,
RR31OO, RR3200, RR3300,
RR3400, RR3500
v
8.0
SF
.50
MF
29
ML
76
CL
1400
*
————
—
MIL-HDBK-21
RESISTORS,
9.11
SPECIFICATION
MIL-R-19
STYLE
RA
MIL-R-39002
RK
;F
VARIABLE,
WIREWOUND,
DESCRIPTION
Variable, Wirewound, Semiprecision (Low Operating
Temperature)
Variable, WWnvound, Semiprecision
kp =
+)~A#R’f/nQn Failures/l
06 Hours
E
Resistance Factor - ZR
Base Failure Rate - ~
I
‘A(~)
.1
0
.055
.063
10
.058
“
stn?ss
.5
Resistance Range (ohms)
.7
.9
.072
.083
.095
.069
.081
.095
.11
>2K
>5K to 10K
.3
SEMIPRECISION
I
%
10t02K
20
.063
.076
.092
.11
.13
30
.069
.086
.11
.13
,17
40
.076
.098
.13
.16
.21
.085
.11
.15
.20
.27
50
N
70
80
I
:6,1=
.16
.26
.42
.69
100
.19
.34
.59
1.0
.45
.85
90
I
110
.24
120
.31
130
.42
1.1
)
\
1.0
to 5K
1.4
2.0
Potentiometer
60
= .0398 exp
e+%
(-
514
(*)446
(%)5””).
)
T=
Ambient Temperature (“C)
s-
Ratio of Operating Power to Rated Power,
See Section 9.16 for S Calculation.
TAPS
1
Taps
N
‘TAPS
Factor - ~APq
. . ..-
TAPS
‘TAPS
N
TAPS
‘TAPS
3
1.0
13
2.7
23
5.2
4
1.1
14
2.9
24
5.5
5
1.2
15
3,1
25
5.8
6
1.4
16
3.4
26
6.1
7
1.5
17
3.6
27
6.4
8
1.7
18
3.8
28
6.7
9
1.9
19
4.1
29
7.0
10
2.1
20
4.4
30
7.4
11
2.3
21
4.6
31
7.7
12
2.5
22
4.9
32
8.0
2
NOTE: Do not use MlL-R-l 9 below the line. Points
below are overstressed.
MS
?APS
“
‘TAPS
=
25
+ 0.792
Number of Potentiometer Taps,
including the Wiper and Terminations.
9-17
MIL-HDE3K-217F
RESISTORS,
9.11
VARIABLE,
WIREWOUND,
—
SEMIPRECISION
Vottage Factor - ~
Environment
Factor - z=
L
Environment
Applied Voltage*
Rated Voltage
%
Otoo.1
GB
1.0
1.10
GF
2.0
>0.1 to 0.2
1.05
GM
>0.2
to 0.6
1.00
>0.6
to 0.7
1.10
>0.7
to 0.8
1.22
16
7.0
N~
28
Nu
8.0
Alc
12
‘IF
0.9
1.40
>0.9 to 1.0
2.00
>0.8
to
N/A
%c
N/A
‘UF
38
‘RW
●V
.50
SF
Applied
=
Nominal Total Potentiometer
Rp
MF
N{A
ML
N/A
CL
NIA
Resistance
‘Applied
v
-
Power D~ssipation
50 Votts for RA1o
Rated
75 Volts for RA20X-XC, F
130 Volts for RA30X-XC, F
175 Volts for RA20X-XA
275 Volts for RK09
320 Volts for RA30X-XA
Quality Factor - n=
Quality
I
MIL-SPEC
2.0
Lower
4.0
9-18
I
I
I
I
I
I
I
I
I
I
#u
1
.UUIE
.Ulz
.UEU
MIL-HDBK-217F
9.12
VARIABLE,
Sm?ss
“
H..,.
Resistance Factor - nR
Base Failure Rate - ~
.1
.3
.5
.7
0
.064
.074
.084
.097
.11
10
.067
.078
.091
.11
.12
20
.071
.084
.099
.12
.14
30
.076
.091
.11
.13
.16
.15
.17
TA (%)
POWER
Variable, Whwound, Power Type
&~Ap#R~ZcZ&EFailures/IO’
%=
WIREWOUND,
DESCRIPTION
STYLE
RP
SPECIFICATION
MIL-R-22
RESISTORS,
.9
Resistance Range (ohms)
I
I
‘R
1 to 2K
>2K
tO
1.0
5K
1.4
>5K to 10K
2.0
Potentiometer
Taps
Factor - ~APS
., .,-
‘TAPS
N
TAPS
3
1.0
13
2.7
23
5.2
4
1.1
14
2.9
24
5.5
5
1.2
15
3.1
25
5.8
.15
6
1.4
16
3.4
26
6.1
.18
7
1.5
17
3.6
27
6.4
8
1.7
18
3.8
28
6.7
9
1.9
19
4.1
29
7.0
10
2.1
20
4.4
30
7.4
11
2.3
21
4.6
31
7.7
12
2.5
22
4.9
32
8.0
40
.081
.099
.12
50
.087
.11
.14
60
.095
.12
.15
70
.10
.14
.18
80
.12
90
.13
100
.15
110
.17
120
.20
N
TAPS
‘TAPS
N
TAPS
‘TAPS
~
= .0481 exp
\
exp(+
(
334
(T:%)4’6)X
(TJ~~)2083)
2
us
T.
Ambient Temperature (“C)
%APS
=
s=
Ratio of Operating Power to Rated Power.
See Section 9.16 for S Calculation.
‘TAPS
=
25
+ 0.792
Number of Potentiometer Taps,
including the W@er and Terminations
9-19
.
.-.
.A
--,
I
i
I
I
MIL-HDBK-217F
RESISTORS,
9.12
VARIABLE,
WIREWOUND,
POWER
Voltage Factor - ~
Quality Factor - XQ
Applied Voltage*
Rated Voltage
Quality
‘%
I
MIL-SPEC
Otoo.1
1.10
>0.1 to 0.2
1.05
>0.2 to 0.6
1.00
>0.6 to 0.7
1.10
Lower
1.22
>0.8 to 0.9
1.40
>0.9 to 1.0
2.00
Environment
Environment
Rp
Nu
=
Nominal
Alc
‘Rated
‘IF
=
Power
=
250 Volts for RP06,
=
Dissipation
‘Uc
RP1 O
I
Class Factor - ~
Construction
Style
.
-
Xc
Class
Enclosed
RP07,
Unenclosed
All Other Styles are
Unenclosed
RP1l,
RP16
I
9-20
~E
16
7.0
28
8.0
12
N/A
‘UF
N/A
*RW
38
.50
SF
500 Votts for Others
Construction
I
3.0
~RPpApplied
Total Potentiometer
Factor - ZE
GF
=
Resistance
‘Applied
4.0
1.0
Ns
Applied
2.0
GB
GM
●v
~Q
I
\
>0.7 to 0.8
I
20
1.0
II
I
MF
N/A
ML
WA
cL
NIA
b
.
MIL-HDBK-217F
9.13
SPECIFICATION
MIL-R-22097
STYLE
RJ
MIL-R-39035
RJR
RESISTORS,
TA (%)
.1
DESCRIPTION
Failures/l
0
.021
.021
.022
.023
.024
.025
.026
.028
.030
.034
.038
.043
.050
.060
.074
;:
30
40
50
60
70
I
%
100
110
120
130
140
smss
.5
.023
.023
.024
.025
.026
.028
.030
.032
.035
.039
.044
.051
.060
.073
.024
.025
.026
.028
.029
.031
.033
.036
.040
.045
.052
.060
06 Hours
Resistance Factor - mR
Failure Rate - &
.3
NONWIREWOUND
Variable, Nonwifewound (Adjustment Types)
Variable, Nonwirewound (Adjustment Types),
Established Reliability
% = ‘b%APS’R%%’E
Base
VARIABLE,
.
.7
.9
.026
.027
.029
.030
.032
.035
.038
.042
.046
.053
,061
.028
.030
.031
.033
.036
.039
.043
.047
.053
.061
Resistance Range (ohms)
10 to 50K
1.0
>50K to 100K
1.1
>IOOK to 200K
1.2
>200K to 500K
1.4
>500K
1.8
to 1 M
Potentiometer
N
‘R
N
Taps
Factor -
‘%APS
N
TAPS
‘TAPS
2.7
23
5.2
14
2.9
24
5.5
1.2
15
3.1
25
5.8
6
1.4
16
3.4
26
6.1
Ambient Temperature (“C)
7
1.5
17
3.6
27
6.4
Ratio of Operating Power to Rated Power.
See Section 9.16 for S Calculation.
8
1.7
18
3.8
28
6.7
9
1.9
19
4.1
29
7.0
10
2.1
20
4.4
30
7.4
11
2.3
21
4.6
31
7.7
12
2.5
22
4.9
32
8.0
TAPS
‘TAPS
TAPS
3
1.0
13
4
1.1
5
‘TAPS
I
I
\
=
.019 exp (. 445
.xP(&(T;;r)
T=
s
=
(Il&y)x
246)
2
MEf
hAPS
=
‘TAPS
=
25
+ 0.792
Number of Potentiometer Taps,
,
including the Wiper and Terminations.
9-21
I
1I
MIL-HDBK-217F
9.13
RESISTORS,
VARIABLE,
NONWIREWOUND
Voltage Factor - ~
—
Environment Factor - xc
L
Applied Voltage”
Rated Voltage
Environment
*v
GB
1.0
3.0
Oto 0.8
1.00
GF
>0.8 to 0.9
1.05
%
>0.9 to 1.0
1.20
N~
Nu
“v
==
Rp
=
Applied
6.0
24
5.0
‘IF
7.0
AUc
12
‘UF
18
‘RW
39
‘Applied
=
Power Dissipation
v
=
200 Votts for RJ and RJR26;
SF
RJ and RJR50
MF
22
ML
57
Rated
=
300 Volts for All Others
*
Quality Factor - G
Quality
s
.020
R
.060
P
.20
M
.60
MIL-R-22097
Lower
9-22
———__
14
Alc
Nominal Total Potentiometer
Resistance
~E
.— _ _
3.0
10
c1
.50
1000
MIL-HDBK-217F
RESISTORS,
9.14
Variable, Composition, Low Precision
Failures/l
Lp = ‘#TAp&#f/nQnE
I
COMPOSITION
DESCRIPTION
STYLE
RV
SPECIFICATION
MIL-R-94
VARIABLE,
OG Hours
Resistance Factor - Xn
Base Failure Rate - ~
..
Resistance Range (ohms)
Stress
.5
.7
.9
.032
.035
.038
50 to 50K
1.0
.031
.034
.038
.042
>50K to lOOK
1.1
.029
.033
.037
.042
.048
>1OOKto 200K
1.2
30
.031
.036
.041
.048
.056
>200K to 500K
1.4
40
.033
.039
.047
.056
.067
>500K tO 1 M
1,8
50
.036
.044
.054
.067
.082
60
.039
.050
.065
.083
.11
70
.045
.060
.08
,11
.14
80
.053
.074
.10
.15
90
.065
.096
,14
100
.084
.13
110
.11
TA (%)
.1
.3
o
.027
.030
10
.028
20
Potentiometer
N
%
=
.0246
.xp(&(w)”
Ts
13XP
[. 459
(*)9.3-)X
)
Ambient Temperature (“C)
=
Ratio of OperW!ng Power to Rated Power,
See Section 9.16 for S Calculation.
N
Factor - ~AP:
‘TAPS
N
3
1.0
13
2.7
23
‘TAPS
7
5.2
4
1.1
14
2.9
24
5.5
5
1.2
15
3.1
25
5.8
6
1.4
16
3.4
26
6.1
7
1.5
17
3.6
27
6.4
0
1.7
18
3.8
28
6.7
9
1.9
19
4.1
29
7.0
10
2.1
20
4.4
30
7.4
11
2.3
21
4.6
31
7.7
12
2.5
22
4.9
32
8.0
TAPS
‘TIW
Taps
?APS
-
‘TAPS
=
TAPS
TAPS
MEr+07,2
25
.
Number of Potentiometer Taps,
including the Wiper and Terminations.
9-23
MIL-HDBK-217F
9.14
RESISTORS,
VARIABLE,
COMPOSITION
Environment Factor - XE
Voltage Factor - ~
Applied Voltage*
Rated Voltage
Environment
%
GB
1.0
2.0
o to 0.8
1.00
GF
>0.8 to 0.9
1.05
GM
>0.9 to 1.0
1.20
“v
Applied
Rp
“
=
-d
Nominal Total Potentiometer
Resistance
‘Applied
v
Rated
29
*IC
40
‘IF
65
‘Uc
*RW
500 Volts for RV4X--XA8XB
=
500 Vofts for 2RV7X--XA&XB
w
350 Volts for RV2X-XA&XB
350 Votts for RV4X--XA&XB
=
350 Votts for RV5X--XA&XB
=
350 Volts for RV6X--XA&XB
w
250 Votts for RV1 X--XA&XB
=
200 Votts for All Other Types
Quality Factor - nO
I
9-24
MIL-SPEC
2.5
Lower
5.0
48
78
46
SF
.50
MF
25
ML
66
cl
=
8.0
Nu
Power Dissipation
=
19
N~
*UF
.
~E
1200
lvllL-t-fDBK-217F
9.15
RESISTORS,
SPECIFICATION
MIL-R-39023
STYLE
RQ
MIL-R-23285
RVC
VARIABLE,
NONWIREWOUND,
Failures/l
OG Hours
Base Failure Rate - ~
~RQ
Stvle OnIv)
——
%
80
90
100
110
.1
.3
.5
.7
.9
.023
.024
.026
.028
.032
.037
.044
.053
.068
.092
.13
.20
.024
.026
.029
.032
.036
.042
.051
.064
.083
.11
.17
.026
.029
.032
,036
.041
.049
.060
.076
.10
.14
.028
.031
.035
.040
.047
.057
.070
.091
.12
.031
.034
.039
,045
.053
.065
.083
.11
T+273
:.,”;;;
0
;;
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
7.4
T=
s
&F)
‘6
Resistance
Range
.5
.7
.9
.028
.029
.030
.031
.032
.034
.036
.039
.043
.048
.055
.064
.077
.096
.12
.17
.24
.37
.031
.032
.033
.035
.037
.040
.044
.049
.055
.063
.075
.091
.11
.15
.20
.29
.44
.033
.035
.037
.040
.043
.047
.053
.060
.070
.083
.10
.13
.17
.23
.33
.50
.036
.038
.041
.045
.050
.056
.064
.075
.09
.11
.14
.18
.25
.36
.53
.039
.042
.046
.051
.058
.066
.078
.093
.11
.15
.19
,26
.37
.55
T+273
—
() 398
7.9
(T;Y);3
)
T
=
Ambient Temperature (“C)
s
=
Ratio of Operating Power to Rated Power.
See Section 9.16 for S Calculation.
‘R
Up to 10K
1.0
>1 OK to 50K
1.1
>50K
to 200K
1.2
>200K
tO 1 M
1.4
>lM
.3
q(a)
Factor - ZR
(Ohms)
.1
.0257 exp
%=
Ratio of Ogmrating Power to Rated Power.
See Section 9.16 for S Calculation.
Resistance
!.,
)
Ambient Temperature (“C)
=
-F
TA (’C)
()
h
lRVP.
,. . . . .Shfk
-., .- mlu) )
.
&iess
0
PRECISION
DESCRIPTION
Base Failure Rate - ~
10
20
30
40
50
AND
Variable, Nonwirewound, Film, Precision
Vatiabie, Nonwirewound, Film
Lp = kbXTAp~ZRZvZQnE
TA (W)
FILM
1,8
I
9-25
MIL-HDBK-217F
9.15
RESISTORS,
VARIABLE,
NONWIREWOUND,
FILM
AND
Potentiometer Taps Factor - ~APq
Quality Factor - TCO
. . ..-
N
TAPS
N
‘TAPS
TAPS
‘TAPS
N
PRECISION
TAPS
‘TAPS
Quality
3
1.0
73
2.7
23
5.2
4
1.1
14
2.9
24
5.5
5
1.2
15
3.1
25
5.8
6
1.4
16
3.4
26
6.1
7
1.5
17
3.6
27
6.4
8
1.7
18
3.8
28
6.7
9
1.9
19
4.1
29
7.0
10
2.1
20
4.4
30
7.4
11
2.3
21
4.6
31
7.7
NS
12
2.5
22
4.9
32
8.0
Nu
MIL-SPEC
2
Lower
4
Environment
Environment
Factor - XE
~E
GB
1.0
GF
3.0
GM
14
7.0
24
w
6.0
*IC
2
d
%APS
=
‘TAPS
=
+ 0.792
25
Number of Potentiometer Taps,
including the Wiper and Terminations.
‘IF
12
%c
20
*UF
30
‘RW
39
SF
Voltage
Applied
Rated
Factor - ~
Voltage”
Voltage
‘v
MF
22
ML
57
c,
O to 0.8
1.00
>0.8
to 0,9
1.05
>0.9 to 1.0
1.20
r
●V
.
~’
=
Nominal Total Potentiometer
Applied
Rp
Resistance
‘Applied
=
Power Dissipation
v
=
250 Votts for RQ090, 110, 150, 200,
Rated
300
9-26
=
500 Volts for RQ1 00, 160, 210
a
350 Votts for RVC5, 6
I
.50
1000
-
*
,.
“
MIL-HDBK-217F
9.16
CALCULATION
OF
STRESS
RATIO
FOR
POTENTIOMETERS
Stress Ratb (S) Cakulation for Potentiometers
Stress Rat& (S) Calculationfor Rheostats
Connected Conventionally
&
‘mnax
s-
*
‘APPLIED
s.
‘EFF
%AffiEt)(’maxr~ed)’
x ‘GANGED
Equhmkmtpowerinputtothe
potendometerwhenitis not
loaded(i.e.,wiper lead
dkaommctod).Calcukte as
follows:
Maxinwn ament Whii will
be passed through the rheosta
in tho ckouft.
ImZIXrat~
Current rating of
the
potentiometer. H ourrent
rating is not given, use:
V2
in
‘Applied
&te@p
P
rated
Rp
x ‘RATED
Power Rating of Potentiometer
%
Vin
InputVoltage
Rp
Nominal Total Potentiometer
Resistance
Nominal TotalPotentiometer
%ATED
Power Rating of Potentiometer
Resistance
%ANGED
%4NGED
Factor to cxmect for the
Factor to correct for the reduction
in effective rating of the
potentiometer due to the dose
proxim~ uf two or more
potentiometers when they are
ganged together on a common
shaft. see below.
reduction in affective ratfng
of the potentiometer due to
the dose proximity of two or
more potentiometer when they
are ganged together on a
cwnmon shaft. See bebw.
Correction factor for the electrical
loading effect on the wiper
oontact of the potentiometer. Its
value is a function of the type of
potentiometer, its resistance,
and the bad resistance. See
next page.
Ganged-Potentiometer FWOf
B
r
Number of
Sections
Single
TW
Three
Four
Five
Six
First
Potentiometer
Next to Mount
1.0
0.75
0.75
0.75
0.75
0.75
I
l-hkd in Gang
Second in
Gang
0.60
0.50
0.50
0.50
().50
‘
0.60
0.50
0.40
0.40
- ICG~GED
Fourth in Gang
Not App Iioable
Not
Not
0.60
0,50
I
040
Fifth in Gang
Sixth in Gang
Applicable
Applicable
Not
0.60
050
Applicable
1 Not Applicable
I
060
9-27
,-
(
MIL-HDBK-217F
9.16
CALCULATION
OF STRESS
RATIO
FOR
Styk Constant - KH
.,
Loaded Potentiometer Derating Factor- ZEFF
%1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.5
2.0
3.0
4.0
5.0
10.0
100.0
Potentiometer
0.2
0.3
0.5
1.0
.04
.13
.22
.31
.38
.45
.51
.55
.59
.03
.09
.16
.23
.29
.35
.40
.45
.49
.53
.65
.73
.81
.86
,88
.94
.99
.02
.05
.10
.15
.20
.25
.29
.33
.37
.40
.53
.82
.72
.78
.82
.90
.99
.01
.03
.05
.08
.11
.14
.17
%
.80
.87
.90
.92
.96
1.00
%?
.25
.36
.44
.56
.64
.69
.83
.98
=
=
f%”
Style Type
%
MlL-R-l 9
RA
0.5
MIL-R-22
IW
1.0
MN-R-94
Rv
0.5
MlL-R-l 2934
RR1 000, 1001,
0.3
1003, 1400,
2100, 2101,
2102,2103
All Other Types
0.2
MIL-R-22097
RJll,
0.3
MIL-R-22097
All Other Types
0.2
MIL-R-23285
Rvc
0.5
MIL-R-27208
RT22, 24,26,27
0.2
MIL-R-27208
AH Other Types
0.3
MIL-R-39002
RK
0.5
MIL-R-39015
RTR 22,24
0.2
use lowest value). RL is the total
MJL-R-39015
RTR12
0.3
resistance between the wiper arm
and one end of the potentiometer.
MIL-R-39023
RQ
0.3
MIL-R-39035
RJR
0.3
RL2 + KH
RP2 + 2RPRL
(
RL
MIL-SPEC
MIL-R-12934
RL2
%FF
—
POTENTIOMETERS
)
Load resistance (If RL is variable,
RJ12
Nominal Total Potentiometer
I
Resistance
%i
-
Style -nstant.
See KH
Table.
9-28
—
————
.--—
MIL-HDBK-217F
9.17
RESISTORS,
EXAMPLE
Example
Type RVISAYSA505A
vartable 500K ohm resistor procured per MIL-R-94, rated at 0.2
watts is being used in a fixed ground environment. The resistor ambient temperature is
40”C and is dissipating 0.06 watts. The resistance connected to the wiper contact varies
between 1 megohm and 3 megohms. The potentiometer is connected conventionally
without ganging.
Given:
The appropriate model for RV style variable resistors Is given in Sectbn 9.14.
Based on the given
infon’natbn the folbwing modei factors are determined fnm the tables shown in Seotbn 9.14 and by
foiiowingthe procedure for determining electrical stress for potentiometers as desdbed in Section 9.16.
From Section
9.16
‘APPLIED
.06W
‘EFF
.62
KH . .5 for MIL-R-94 (Section 9.16 Tabie)
1.0
Not Ganged (Section 9.16 Table, Single Section,
%ANGED
First Potentbmeter)
‘RATED
‘APPLIED
s
From Section
.2W
~EFF x ‘GANGED
x ‘RATED
.06
= (.62)(1.0)(.2)
= ‘m
9.14
.047
TA = 40°C, S Rounded to .5
1.4
500K
1.0
3 Taps, Basic Single Potentiometer
VRATED = 250 VOttS for RV1 prefu
1.0
ohms
VAPPLIED
= ~ (500,000)(.06)
‘APPLJE#RATED
173
= ~
~ 173 VOftS
= ●
W
2.5
2.0
% ‘TAPS%
(.047)(1.0)(1
‘V ‘Q ‘E
.4)(1 .0)(2.5) (2.0) = .33 Failures/l 06 Hours
9-29
——
.
MIL-HDBK-217F
10.1
CAPACITORS,
FIXED,
PAPER,
BY-PASS
SPECIFICATION
MII--C-25
STYLE
CP
DESCRIPTION
Paper, By-pass, Filter, Blocking,
MIL-C-12889
CA
Paper, By-pass, Radio Interference Reduction AC
DC
andl3-Zp = lbZCVXQnE
Failures/l
OG Hours
Base Failure Rate - ~
Base Failure Rate - ~
(T.85”c MaxRated)
(T-125%
(All MIL-G-12889:”MIL-C-25 Stvles CP25. 26.27.28.29.
40, 41, 67, 69,70,72,
75, 76,77,78:80:81
i 82:
Characteristics E. F)
‘
S&
TA (%]
.1
.3
.00088
.0011
.0036
.015
.051
10
.00089
.0011
.0036
.016
.052
20
.00092
.0011
.0037
.016
.054
30
.00097
.0012
.0039
.017
.057
40
.0011
.0013
.0044
.019
.063
50
.0013
.0016
.0052
.022
.075
60
.0017
.0021
.0069
.030
.10
70
.0027
.0034
.011
.048
.16
80
.0060
.0074
.024
.10
.35
TA (%)
0
\=.00086[(~)5+
T=
s
.5
Max Ra!ed)
(MIL-C-25 Styles CP 4,5,8,9,
10, 11, 12 13;
Characteristic K)
.1
.3
stress
.5
.7
.9
.9
.7
l]exp(2.5(~)18)
o
.00086
.0011
.0035
.015
.051
10
.00087
.0011
.0035
.015
.051
20
.00087
.0011
.0035
.015
.051
30
.00088
.0011
.0035
.015
.051
40
.00089
.0011
.0036
.015
,052
50
.00091
.0011
.0037
.016
.053
60
.00095
.0012
.0039
.017
.056
70
.0010
.0013
.0041
.018
.060
80
.0011
.0014
,0046
.020
.067
90
.0014
.0017
.0056
.024
.081
100
.0019
.0023
.0076
.033
.11
110
.0030
.0037
.012
.052
.18
120
.0063
.0078
.026
.11
.37
Ambient Temperature (“C)
=
Ratio of Operating to Rated Voltage
Operating vottage is the sum of applied D.C. vottage
and peak A.C. voltage.
~=.ooW3[(5)5+
1]-p(2..(~)’8)
T.
s
Ambient Temperature (“C)
-
Ratio of Operating to Rated Vottage
Operating voftage is the sum of applied D.C. voltage
and peak A.C. voltage.
1o-1
I
MIL-HDBK-217F
10.1
CAPACITORS,
FIXED,
PAPER,
BY-PASS
Capacitance Factor- WV
-.
Capacitance, C (@)
Environment
‘c v
MIL-C-25*
.0034
.15
2.3
16.
0.7
1.0
1.3
1.6
MIL-C-12889
All
1.0
Factor - x_
t
Environment
fiE
e~
1.0
GF
2.0
GM
9.0
5.0
Nu
15
6.0
‘Ic
‘IF
●
‘Cv
= 1.2c”095
*UC
*UF
%w
17
32
22
SF
Quality Factor - Xfi
Quality
10-2
8.0
MIL-SPEC
3.0
Lower
7.0
.50
MF
12
ML
32
CL
570
+.-
- ., .
... .,.
.
.
. ... . ... .. .
., .,.
,,,
.
.. ...
..
MIL-HDBK-217F
CAPACITORS,
.10.2
PAPER,
FEED-THROUGH
DESCRIPTION
Paper, Metallizecf Paper, Metallized Plastiq RFI
Feed-Throuqh Established Reliability and
STYLE
CZR and CZ
SPECIFICATION
MlL-C-l 1693
FIXED,
Non-Establi;ht?d Reliability
Xp = kbZCvZQzE
Failures/l
06 Hours
Base Failure Rate - ~
Base Failure Rate - ~
~=
(T=85”c MaxRated)
(Char-enstics E, W)
TA (“C)
o
;;
30
40
50
60
70
80
4
.1
.0012
.0012
.3
.0014
.0015
,0012
.0013
.0014
.0017
.0023
.0037
.0080
.0015
.0016
.0018
.0021
.0028
.0045
.0099
.5
.0047
.7
.020
.9
.069
.0048
.0050
.0053
.0058
.0069
.0092
.015
.032
.021
.021
.023
.025
.030
.039
.064
.14
.070
.072
.076
.084
.10
.13
.21
.47
~=.o.11,[(~)’
+1]..P(2.,(~)18)
Ambient Temperature (“C)
Ratio of Operating to Rated Voltage
T=
s=
Operating voltage is the sum of applied D.C. voltage
and peak A.C. voltage.
TA (%)
.1
0
.0012
E
30
40
50
60
70
80
90
100
110
120
130
140
150
.0012
.0012
.0012
.0012
.0012
.0012
.0012
.0013
.0013
.0015
.0017
.0022
.0033
.0058
.014
Base Failure Rate - ~
TA (“C)
.1
o
.0012
.0012
.0012
.0012
.0012
.0012
.0013
.0014
.0015
.0019
.0025
.0040
.0084
;:
30
40
E
70
80
90
100
110
120
\=.00115[(~)’
T.
s
=
(T= 125°C Max Rated)
(Characteristic K)
Sfmss
.3
.5
.0014
.0014
,0014
.0014
.0015
.0015
.0016
.0017
.0019
.0023
.0031
.005
.010
.0047
.0047
.0047
,0047
.0048
.0049
.0052
.0055
.0062
.0075
.010
.016
.034
~“00115[(~)5+
.9
.020
.020
.020
.020
.021
.021
.022
.024
.027
.032
.044
.07
.15
.068
.068
.068
.069
.070
.072
.075
.08
.09
.11
.15
.24
.49
+ l]w(25(Tjfl)18)
Ambient Temperature (“C)
Ratio of Operating to Rated Voftage
Operating vottage is the sum of applied D.C. voltage
and peak A.C. voltage.
I
I
s
.3
.0014
.0014
.0014
.0014
.0014
.0015
.0015
.0015
.0016
.0017
.0018
.0022
.0028
.0040
.0072
.017
.5
.7
.9
.0047
.0047
.0047
.0047
.0047
.0048
.0048
.0049
.0051
.0055
.0060
.0071
.0091
.013
.024
.057
.020
.020
.020
.020
.020
.020
.021
.021
.022
.023
,026
.03
.039
.057
.10
.24
.068
.068
.068
.068
.068
.069
.070
.071
.074
.079
.087
.10
.13
.19
.34
.62
11expF5(-Y
Ambient Temperature (“C)
T=
.7
150”C Max Rated)
i~haraeinrktic
,-,
,-, ----- .. ... P}
. f
(
=
Ratio of Operating to Rated Vottage
Operating voltage is the sum of applied D.C. vottage
and peak A,C. voltage.
I
.
MIL-HDBK-217F
i
10.2
CAPACITORS,
Capadtance
FIXED,
PAPER,
FEED-THROUGH
Factor-WV
Environment
Capacitance, C (JAF)
0.0031
L
1.0
1.8
1.5
f
I
‘c
Environment
.70
0.061
Factor - XE
v = 1.4c0”’2
Quality Factor - XQ
Quality
GB
1.0
GF
2.0
GM
9.0
N~
7.0
Nu
15
*IC
6,0
‘IF
8.0
*UC
17
*UF
28
%w
22
.50
SF
M
Non-Established
Lower
1.0
Reliability
3.0
MF
12
ML
32
c,
10
10-4
I
4
.
MIL-HDBK-217F
10.3
SPECIFICATION
MIL-C-14157
MIL-C-19978
CAPACITORS,
PAPER
1P = &cVZQnE
Failures/l
0
;:
30
40
50
60
.3
.00053
.00055
.00061
.00071
.00094
.0015
.0034
.00065
.00069
.00075
.00088
.0012
.0019
.0042
(-r. e5’’chk Ratacf)
ML-C-14157 StvleCPV17:
MIL@--19978 Characteristics E, F; G, M)
St?ess
.5
.0021
.0022
.0025
.0029
,0038
.0061
.014
.7
.0092
.0096
.011
.012
.016
.026
.059
.9
.1
.00051
.00052
.00054
.00057
.00063
.00074
.00099
.0016
.0035
.031
.032
.036
.042
.055
.088
.20
~=..oo,[(~)’+1].xp(2..(~)18)
Ts-
Ambient Temperature (“C)
Ratio of Operating to Rated Voftage
(MIL-C-141 57 StVta CPV09 and MlL-C-l 9978
Chara&teristics K, Q, S)
Stress
TA (“C)
.1
.3
.5
.7
.9
%
80
90
100
110
120
.0020
.0020
.0020
.0021
.0021
.0021
.0022
.0024
.0027
.0033
.0044
.0071
.015
.0087
.0088
.0088
.0089
.009
.0092
.0096
.010
.012
.014
.019
.030
.064
.029
.029
.030
.030
.030
.031
.032
.035
.039
.047
.064
.10
.21
~-.ooW[(~)5+
l]e.p(2.5(*)’8)
T=
s.
.00063
.00064
.00066
.00070
.00077
.00092
.0012
.0020
.0043
.0021
.0021
.0022
.0023
.0025
.0030
.0040
.0064
.014
.7
.0089
.0090
.0093
.0099
.011
.013
.017
.028
.061
.9
.030
.030
.031
.033
.037
.043
.058
.093
.20
Ambient Temperature (°C)
s
Ratio of Operating to Rated Voltage
Operating voltage is the sum of appiied D.C. voftage
and peak A.C. voltage.
(T. 125oCMaxRated)
.00062
.00062
.00062
.00063
.00064
.00066
.00068
.00073
,00083
.0010
.0013
.0022
.0045
.5
T-
Base Faibre Rate - ~
.00050
.00050
.00051
.00051
.00052
.00053
.00055
.00059
.00067
.00081
.0011
.0018
.0037
.3
~-.wm[(~)s+
l]e.p(2.5(*)18)
Operating voltage is the sum of applied D.C. vottage
and pa ak A.C. voltage.
o
10
20
30
40
50
FILM
Oe Hours
stress
.1
PLASTIC
Base Failure Rate - ~
Base Failure Rate - ~
(?-=65”c MaxRated)
(MIL-C-14157styleCPV07;
MlL-C-l9978 Characteristics P, L]
TA ~)
AND
DESCRIPTION
Paper and Plastk Film, Est. Rel.
Paper and Plastk Film, Est. Rel. and Non-Est. Ret.
STYLE
CPV
CQR and C(2
“
FIXED,
Ambient Temperature (“C)
Ratio of Operating to Rated Vottage
Operating voltage is the sum of applied D.C. voftage
and peak A.C. voltage.
‘A (%)
o
Y
30
40
::
::
90
100
110
120
130
140
150
160
170
Base Failure Rate - ~
(T= 170”C Max Rated)
(MIL-C-1 9978 Characteristic T)
Stress
.1
.3
.5
.7
.00050
.00050
.00050
.00050
.00050
.00050
.00051
.00051
.00052
.00054
.00056
.00060
.00067
.00079
.0010
.0015
.0026
.0061
~=.0005[(~)5+
.00062
.00062
.00062
.00062
.00062
.00062
.00063
.00063
.00065
.00066
.00069
.00074
.00083
.00098
.0013
.0018
.0032
.0075
.0020
.0020
,0020
.0020
.0020
.0020
.0021
.0021
.0021
.0022
.0023
.0024
.0027
.0032
.0041
.006
.011
.025
,0087
.0087
.0087
.0087
.0087
.0088
.0088
.0089
.0091
.0093
.0097
.010
.012
.014
.018
.026
.046
.11
.9
.029
.029
.029
.029
.029
.030
.030
.030
.031
.031
.033
.035
.039
.046
.060
.087
.15
.36
1].xp(2.5(*)18)
.
T
=
Ambient Temperature ~C)
s=
Ratio of Operating to Rated Voftage
Operating vottage is the sum of applied D.C. vottage
and Desk A.C. voltaae.
10-5
.
.
MIL-HDBK-217F
10.3
CAPACITORS,
FIXED,
PAPER
AND
PLASTIC
FILM
Environment
-.
Capacitance, C @F)
MIL-C-14157:
.0017
.027
.20
1.0
I
*CV
●
.70
1.0
7.3
1.6
MIL-C-19978: w
.00032
.033
1.0
15.0
●
●
.70
1.0
1.3
1.6
‘Cv = 1.6C0”13
“ 7tcv = 1.3C
0.077
~Q
s
.03
R
.10
P
.30
M
1.0
L
3.0
Lower
10-6
Non-Est.
%E
GB
1.0
GF
2.0
GM
8.0
Ns
5.0
Nu
14
%c
4.0
‘IF
6.0
*UC
11.0
*UF
20
*RW
20
Rel.
10
30
.50
MF
11
ML
29
c’
Quality
9978,
Environment
SF
Quality Factor - nQ
MlL-C-l
Factor - XE
530
MIL-HDBK-217F
10.4
CAPACITORS,
FIXED,
SPECIFICATION
MIL-C-18312
MI L-C-39022
METALLIZED
PAPER,
Base Failure Rate - ~
(T-85”c MaxRated)
(MIL-C-39022Charactertatic
9 and 12 (50 Voltsrated].
~ (%)
eristic 49; and MlL-C-l 8312 Characteristic R)”
stress
.1
.5
.7
.9
.3
.00070
.00087
.0029
.012
.041
10
.00072
.00089
.0029
.012
.042
20
.00074
.00091
.0030
.013
.043
30
.00078
,00097
.0032
.014
.046
40
.00086
.0011
.0035
.015
.051
50
.0010
.0013
.0041
.018
.06
60
.0014
.0017
.0055
.024
.08
70
.0022
.0027
.0089
.038
.13
80
.0048
.0059
.019
.084
.28
o
~=.WW9[(~)5+
l]exp(2.5
AND
PLASTIC
DESCRIPTION
Metallized Paper, Paper-Plastic, Plastic
MetalJized Paper, Paper-Plastic, Plastic,
Established Reliabifii
STYLE
CH
CHR
kp = kbTCCvXQxE Failures/l
Chara
PAPER-PLASTIC
OG Hours
Base Failure Rate - ~
(T=1250CMax
Rated)
(MIL-C-39022 Char~eristic
9 and 12 (above 50 Votts
ratedl Characteristics 1.10, 19, 29, 59; and
“.MlL-C-l8312 Chara%istic
N)
Strass
.1
.3
.7
.9
.5
TA (~)
o
.00069
.00086
.0028
.012
.041
10
.00069
.00086
.0028
.012
.041
20
.00070
.00086
.0028
.012
.041
30
.00070
.00087
.0028
.012
.041
40
.00071
.00088
.0029
.012
.042
50
.00073
.00090
.003.
.013
.043
60
.00076
.00094
.0031
.013
.04s
70
.00082
.0010
.0033
.014
.048
80
.00092
.0011
.0037
.016
.054
90
.0011
.0014
.0045
.019
.065
100
.0015
.0019
.0061
.026
.088
110
.0024
.0030
.0098
.042
.14
120
.0051
,0063
.020
.088
.30
(=)18)
T.
Ambient Temperature (“C)
s-
Ratio of Operating to Rated Voltage
Operating voftage is the sum of applied D.C. voltage
and peak A.C. voltage.
\=.00069[(~)’+
T=
S
l]exP(2.5
(=)18)
Ambient Temperature (“C)
=
Ratio of Operating to Rated Voltage
Operating voltage is the sum of applied D.C. voltage
and peak A.C. voltage.
MIL-HDBK-217F
10.4
CAPACITORS,
Capadtance
FIXED,
METALLIZED
PAPER,
PAPER-PLASTIC
AND
PLASTIC
Emkmment Factor -xc
Factor - wv
b
Capacitance, C @F)
‘c v
.70
0.0029
0.14
1.0
2.4
1.3
Zcv = 1.2C
Environment
GB
1.0
GF
2.0
%
8.0
NS
5.0
Nu
0.092
*IC
‘IF
*UC
Quality Factor - Xn
u
7CQ
Quality
~E
14
4.0
6.0
11.0
*UF
20
‘RW
20
s
0.03
SF
R
.10
MF
11
P
.30
ML
29
CL
530
M
1.0
L
3.0
MIL-C-18312,
Lower
Non-Est.
Rel.
7.0
20
.50
MIL-HDBK-217F
10,5
SPECIFICATION
MIL-C-55514
CAPACITORS,
FIXED,
PLASTIC
AND
STYLE
DESCRIPTION
CFR
Plastic, Metallized
Xp = kbXcvXQzE
Failures/l
METALLIZED
PLASTIC
Plastic, Est. Rel.
OG Hours
Base Failure Rate - ~
(T= 12SOCMax Rated)
(Charadari@im
\ -. -------- .-. .— 0-,
(Characteristics M, N’)
TA (%)
.1
.3
R
, ., !%)
- t
Strws
.5
.5
.7
.9
TA (“C)
.1
.3
.00099
.0012
.7
.9
.0040
.017
.058
o
.0010
.0012
.0041
.018
.059
0
10
.0010
.0013
.0042
.018
.060
10
.0010
.0012
.0040
.017
.058
20
.0011
.0013
.0043
.018
.062
20
.0010
.0012
.0041
.017
.059
30
.0011
.0014
.0045
.020
.066
30
.0010
.0012
.0041
.018
.059
40
.0012
.0015
,0050
.022
.073
40
.0010
.0013
.0041
.018
.060
50
.0015
.0018
.0059
.026
.086
50
.0011
.0013
.0043
.018
.062
60
,0020
.0024
.0079
.034
,11
60
.0011
.0014
.0044
.019
.064
70
.0032
.0039
.013
.055
.18
70
.0012
.0015
.0048
.020
.069
80
.0069
.0085
.028
.12
.40
80
.0013
.0016
.0054
.023
.077
90
.0016
.0020
.0065
.028
.094
100
,0022
.0027
.0087
.038
.13
110
.0035
.0043
.014
.06
.20
120
.0073
.0090
.029
.13
.43
~=.00099[(:)5+
l]exP(2.5
(%)18)
T=
Ambient Temperature (“C)
s=
Ratio of Operating to Rated Voltage
Operating vottage is the sum of applied C).C. voftage
and peak A.C. voltage,
\=.00099[(;)5+
1].XP(2.5
(-)18)
T=
Ambient Temperature (“C)
s-
Ratio of Operating to Rated Voltage
Operating vottage is the sum of applied D.C. voltage
and peak A.C. voftage.
i
. .
,..
MIL-J+DBK-217F
CAPACITORS,
10.5
FIXED,
PLASTIC
AND
METALLIZED
Environment Factor - n=
Capacitance Factor - WV
Capacitance, C (jLF)
I
L
.70
0.33
1,0
7.1
1.3
7CCV=1.1 C
~E
Environment
~cv
0.0049
GB
1.0
GF
2.0
10
GM
5.0
Ns
1.5
38.
PLASTIC
0.085
Nu
16
Alc
6
%
11
%c
18
30
*UF
Quality Factor - ZQ
Quality
~Q
s
.030
R
.10
P
.30
23
‘RW
.50
SF
MF
13
ML
34
610
cL
1.0
M
10
Lower
1o-1o
1
I
I
,--
1
n—I—
—--A
A.-
/
MIL-HDBK-21
10.6
SPECIFICATION
MIL-C-63421
CAPACITORS,
7F
FIXED,
STYLE
DESCRIPTION
CRH
Super-Metallized Plastic, Est. Rel.
1P = kbXCvZQnE
Failures/l
(T= 125°C Max Rated)
stress
.1
.3
.5
::
30
40
50
60
70
80
90
100
110
120
.00055
.00055
.00056
.00056
.00057
.00058
.00061
.00065
.00073
.00089
.0012
.0019
.0040
.00068
.00068
.00069
.00069
.00070
.00072
.00075
.00081
.00091
.0011
,0015
.0024
.0050
,0022
.0022
.0023
.0023
.0023
.0024
.0025
.0026
.0030
.0036
.0049
.0078
.016
Capacitance Factor - WV
t
.7
.9
.0096
.0096
.0097
.0098
.0099
.010
.011
.011
.013
.015
.021
.033
.070
.032
.032
.033
.033
.033
.034
.036
.038
.043
.052
.07
.11
.24
Capacitance,
C (vF)
+ 1].XP(2.5
(~)”
‘Cv
.001
.64
0.14
1.0
2.4
1.3
23
ncv
1.6
= 1 .2C
0.092
Environment
~=.00055[(~)5
PLASTIC
OG Hours
Base Failure Rate - ~
o
SUPER-METALLIZED
;
I
Factor - X_
Environment
GB
T.
Ambient Temperature (“C)
GF
4.0
s=
Ratio of Operating to Rated Vottage
GM
8.0
Ns
5.0
Operating voltage is the sum of applied D.C. voltage
and peak A.C. voltage.
Quality Factor - ZQ
Quality
7tQ
s
.020
14
Alc
4.0
‘IF
6.0
‘Uc
13.0
‘UF
20
fhv
20
R
.10
sF
P
.30
MF
11
ML
29
M
Lower
. . —.
Nu
1.0
10
CL
—— ———
.50
530
t
MIL-HDBK-217F
10.7
CAPACITORS,
FIXED,
MICA
SPECIFICATION
MIL-C-5
STYLE
CM
DESCRIPTION
MICA (Dipped or Molded)
MIL-C-39001
CMR
MICA (Dipped), Established Reliability
Ap = LbZCvZQzE
Failures/l
BaseFailure Rate - ~
(T=70”C Max Rated)
(MIL-G5, Temp. Range M)
stress
.1
.3
.5
TA ~)
T
.00030
.00047
.00075
.0012
.0019
.0031
.0049
.0078
10
20
30
40
50
60
70
~=
8.6x10-10
.00041
.00066
.0011
.0017
.0027
.0043
.0068
.011
[(3)3
.00086
.0014
.0022
.0035
.0056
.0089
.014
.023
I
.7
.0019
.0030
.0047
.0075
.012
.019
.030
.049
+ I]exP(16
.9
TA (“C)
.0036
.0058
.0092
.015
.023
.037
.059
.095
(~)
0
10
20
30
40
50
60
70
80
Ambient Temperature (“C)
Ratio of Operating to Rated Voltage
s.
TA (“C)
o
10
20
30
40
50
60
70
80
90
100
110
120
~b=
T=
s=
.00005
.00008
.00011
.00017
.00025
.00038
.00057
.00085
.0013
.0019
.0028
,0042
.0063
.00007
.00011
.00016
.00024
.00036
.00053
.0008
.0012
.0018
.0027
.0040
.0059
.0089
8.6)( 10-10 [(3)3+
.00015
.00022
.00033
.00050
.00074
.0011
.0017
.0025
.0037
.0055
.0083
.012
.018
jeW(16
8.6 XW1O
[(~)3+
.7
.00051
.00079
.0012
.0010
.003
.0047
.0074
.012
.018
.0011
.0017
.0027
.0042
.0065
.010
.016
.025
.039
1]W(16
(w)
.9
.0021
.0033
.0052
.0081
.013
.020
.031
.048
.076
)
Ambient Temperature (oC)
Ratio of Operating to Rated Vottage
Operating voltage is the sum of applied D.C. voltage
and peak A.C. voltage.
n=1500C
Temp. Ranqe 0)
.7
.00032
.00048
.00071
.0011
.0016
.0024
.0036
.0053
.008
.012
.018
,027
.040
.9
.00062
.00093
.0014
.0021
.0031
.0046
.0069
.010
.016
.023
.035
.052
.077
(%%))
Ambient Temperature (“C)
Ratio of Operating to Rated Vottage
Operating voltage is the sum of applied D.C. voltage
and pa ak A.C. voltage.
10-12
.00024
.00038
.00059
.Ooow
.0015
.0023
.0036
.0056
.0087
Base Failure Rate - ~
Base Failure Rate - ~
(T=125°CMax Rated)
f!fwi
.00017
.00027
.00042
.00066
.0010
.0016
.0025
.0040
I .0062
T=
s.
Operating vottage is the sum of applied D.C. voltage
Temp. Range O; MIL-C-39001
Stress
.1
.3
.5
Base Failure Rate - ~
(T=850C Max Rated)
(MIL-C-5, Temp. Ran@ N)
stress
.1
.3
.5
)
lb=
T.
OG Hours
Max Rated)
UY!!kQsTemp.R-ange P; MIL-C-39001,
TA (“C)
.1
.3
o
10
20
30
40
.00003
.00004
.00006
.00008
.00012
.00018
.00026
.00038
.00055
.0008
.0012
.0017
.0025
.0036
.0053
.0078
.00004
.00005
.00008
.00012
.00017
.00025
.00036
.00053
.00077
.0011
.0016
.0024
.0035
.0051
.0074
.011
%
70
80
90
100
110
120
130
140
150
Ab= S.6XIO-10[(33+
stress
.5
.00008
.00011
.00017
.00024
.00035
.00051
.00075
.0011
.0016
.0023
.0034
.0050
.0073
.011
.015
.023
1].XP(16
Temp. Ranqe P)
.7
.9
.00017
.00024
.00036
.00052
.00076
.0011
.0016
.0024
.0034
.0050
.0073
.011
.016
.023
.033
.049
.00033
.00047
.00069
.0010
.0015
.0022
.0031
.0046
.0067
.0098
.014
.021
.030
.044
.065
.095
(7;;?)
)
Ambient Temperature (“C)
T=
Ratio of Operating to Rated Voftaqe
sOperating voltage is the s~m of applied D.C. voltage
and peak A.C. voltage.
* ,.
MIL-HDBK-217F
10.7
CAPACITORS,
FIXED,
MICA
Capacitance Factor - ~V
Environment Factor - z=
Capacitance, C (pF)
‘Cv
2
.50
38
.75
300
1.0
2000
1.3
8600
106
29000
1,9
Environment
GB
1.0
GF
2.0
10
%
Ns
6.0
16
Nu
84000
I
‘Cv
2.2
= 0.45C”4
%c
5.0
‘IF
7.0
‘Uc
22
‘UF
28
%nN
23
SF
Quality Factor - nQ
Quality
T
.010
s
.030
R
.10
P
.30
M
1.0
L
1.5
MIL-C-5, Non-Est. Rel. Dipped
3.0
MIL-C-5, Non-Est. Ref. Molded
6.0
Lower
.50
MF
13
ML
34
c1
610
15
10-13
n
r-
--
...:--
r---
----
L
nu.
MIL-HDBK-217F
10.8
CAPACITORS,
FIXED,
SPECIFICATION
MIL-C-1095O
MICA,
—
BUTTON
DESCRIPTION
MICA, Button Style
STYLE
CB
Xp = LbZCvXQnE
Failures/l
OG Hours
Base Failure Rate - ~
Base Failure Rate - ~
(T= 85°C Max Rated)
(T= 150”C Max Rated)
fAll
Fxrxmt ----CR50\
\ . ....-TvoP=------
(Stvle CB50)
‘s&-
.1
.3
.5
.7
.9
TA (“C)
.1
.3
0
.0067
.0094
.019
,042
.082
0
.0058
.0081
10
.0071
.0099
.021
.044
.086
10
.0059
20
.0076
.011
.022
.047
.092
20
30
.0082
.011
.024
.051
.10
40
.009
.013
.026
.056
50
.010
.014
.029
60
.012
.016
70
.013
.019
TA (Z)
::00
5~~~~)~~l]ex~72
stress
.5
1
.7
.9
.017
.036
.071
.0083
.017
.037
.072
.0061
.0085
.018
.038
.074
30
.0062
.0087
.018
.039
.076
.11
40
.0064
.009
.019
.040
.079
.063
.12
50
.0067
.0094
.019
.042
.082
.033
.072
.14
60
.0070
.0098
.020
.044
.086
.039
.084
.16
70
.0074
.010
.022
.046
.090
80
.0079
.011
.023
.049
.096
90
.0085
.012
.025
.053
.10
100
.0093
.013
.027
.058
.11
110
.010
.014
.03
.064
.12
(~-
T.
Ambient Temperature (“C)
120
.011
.016
.033
.072
.14
s=
Ratio of Operating to Rated Voltage
130
.013
.018
.038
.082
.16
140
.015
.021
.044
,095
.18
150
.018
.025
.052
.11
.22
Operating vottage is the sum of applied D.C. voltage
and peak A.C. voltage.
k
i
~=
.0053 [(~)3
+ l]exP(l.2
(T~~~)63)
T=
Ambient Temperature (°C)
s==
Ratio of Operating to Rated Voftage
Operating voltage is the sum of applied D.C. voltage
and peak A.C. voltage.
c
10-14
*
MIL-HDBK-217F
10.8
CAPACITORS,
FIXED,
MICA,
BUTTON
Environment Factor - X.
Quality Factor - ZQ
t
Quality
ftQ
MIL-C-1095O
5.0
Lower
h
,
Environment
GB
1.0
GF
2.0
15
Capacitance Factor - ~v
k
Capacitance, C (pF)
GM
Ns
10
Nu
16
5.0
‘Cv
AC
5.0
8
.50
‘IF
7.0
50
.76
*UC
22
‘UF
28
‘RW
23
160
1.0
500
1.3
SF
1200
1.6
MF
13
2600
1.9
ML
34
5000
2.2
cL
‘Cv
.50
610
= .31c0”23
. =——n—-—-—==—-=-—c=.=—=——s—-———————ee—..-
10-15
-
_m_—-
.
. .
..
_._.._.
~== _.
MIL-HDBK-217F
II
I
,
I
I
10.9
CAPACITORS,
FIXED,
SPECIFICATION
MlL-C-l 1272
MIL-C-23269
GLASS
—
DESCRIPTION
GIass
Glass, Established Reliability
STYLE
CY
CYR
Ap = kbnCVTCQnE Failures/l
OG Hours
Base Faiture Rate - ~
Base Failure Rate - &
(T= 200°C Max Rated)
(MIL-C-1 1272 Ternp Range D)
&
.1
.3
.5
.?
(T=125°C Max Rated)
WL!!!!! C-23296
and MlL-C-l 1272 Temp. Range Cl
Stm’ss
TA (%;
o
10
.3
.5
.7
.9
.00005
.00010
.00023
.0005!
.1
.00005
.00007
.00008
.00014
.00035
.00008
.00019
.00011
.00027
.00032
.00078
.0018
.0017
.00018
.00044
.00013
.00014
.00025
.00061
.0015
90
.00018
.00020
.00035
.00086
.0020
100
.00025
.00028
.00050
.0012
.0029
110
.00035
.00039
.00070
.0017
.0040
120
.00049
.00055
.00098
.0024
.0056
.0039
.0092
80
.0012
.0014
.0024
,0058
.014
90
.0018
.0020
.0036
.0087
.021
100
.0027
.0030
.0054
.013
.031
110
.0040
.0045
.0080
.019
.046
.069
(T;%)
Ratio of Operating to Rated Vottage
.00074
80
.0016
s=
.00031
.0041
.00091
Ambient Temperature (“C)
.00013
.0010
.0008
T=
.00053
.00007
70
+ 1].xlp
.00038
,00022
.00010
.0062
‘b = 8.25X lo-fo [(:)4
.00016
.00009
.00006
.0026
.029
.00007
.00005
.00009
.0011
.012
.00004
.00005
60
.00061
.0068
.00003
50
70
.00054
.0060
40
.0028
60
120
.00014
.00003
.00018
.00072
.00006
.00005
.00016
.00041
.00002
.00002
30
.00036
.00010
.00001
.00003
.0012
50
.00004
.00001
.00002
.00052
.0012
.Oooo1 .00002
10
.00002
.00022
.00048
.00001
20
.00012
.00027
o
30
.00011
.00024
.9
.0008
20
40
TA (“C
Operating voltage is the sum of applied D.C. vottage
and peak A.C. voltage.
)
130
.00069
.00078
.0014
.0033
.0079
140
.00096
.0011
.0019
.0047
.011
150
.0014
.0015
.0027
.0065
.016
160
.0019
.0021
.0038
.0092
.022
170
.0027
.0030
.0053
.013
.031
180
.0037
.0042
.0075
.018
.043
190
.0052
.0059
.010
.025
.060
200
.0073
.0083
.015
,035
,084
$=
8.25x
I0 -q(:)4+
1]W(16
(%%)
T=
Ambient Temperature (“C)
s.
Ratio of Operating to Rated Voltage
Operating voltage is the sum of applied D.C, voltage
and peak A.C. voltage.
)
Ml13HDBK-217F
10.9
‘Cv
1
.62
4
.75
Environment
~E
GB
1.0
GF
2.0
GM
10
30
1.0
Ns
200
1.3
Nu
900
1.6
AC
5.0
3000
1.9
‘IF
7.0
8500
2.2
‘Cv = 0.62C0”14
Quality Factor -
6.0
16
*UC
22
*UF
28
‘RW
23
SF
.50
MF
13
ML
34
CL
610
~Q
Quality
~Q
s
.030
R
.10
P
.30
M
1.0
L
3.0
MlL-C-l 1272, Non-Est. Rel.
3.0
Lower
GLASS
FIXED,
Environment Factor - ZE
Capacitance Factor - ~,v
-.
Capacitance, C (pF)
CAPACITORS,
10
10-17
7F
MJL-HDBK-21
10.10
s
CAPACITORS,
FIXED,
3ECIFICATION
CERAMIC,
GENERAL
STYLE
GK
CKR
M !L-C-11015
M L-C-39014
—
PURPOSE
DESCRIPTION
Ceramk, General Puqxxe
Ceramk, General Purpose, Est. Rel.
Lp = kbZcvZQnE
Failures/l
Base Failure Rate - ~
(T= 850C Max Rated)
AIL-C31014 Styles CKR13, 48, 64, 72;
IL-C-I 1015 Type A Rated Temperature)
OG Hours
Base Failure Rate - ~
(T =1500C Max Rated)
ItL-C-l 1015 T ype C Rated Temperature)
I
TA (W
o
10
20
30
40
50
60
70
80
.1
.3
.5
.7
.9
.00067
.00069
.00071
.00073
.00075
.00077
.00079
.00081
.00083
.0013
.0013
.0014
.0014
.0014
.0015
,0015
.0016
.0016
.0036
.0037
.0030
.0039
.004
.0042
.0043
.0044
.0045
.0088
.0091
.0093
.0096
.0099
.010
,010
.011
.011
.018
.019
.019
.020
.020
.021
.021
.022
.023
L
.7
.9
.3
o
.00059
.0011
.0032
.0078
.016
10
.00061
.0012
.0033
.00’8
.016
20
.00062
.0012
.0034
.0082
.017
30
.00064
.0012
.0035
.0084
.017
40
.00065
.0013
.0035
.0086
.018
50
.00067
.0013
.0036
.0088
.018
.
%-
0003[(33
“18X’(T=
)
60
.00068
.0013
.0037
.009
.018
T=
s=
Ambient Temperature (“C)
Ratio of Operating to Rated Voltage
70
.00070
.0013
.0038
.0092
.015
80
.00072
.0014
.0039
.0095
.019
90
.00073
.0014
.0040
.0097
.020
100
.00075
.0014
.0041
.0099
.020
110
.00077
.0015
.0042
.010
.021
120
.00079
.0015
.0043
.010
.021
130
.00081
.0016
.0044
.011
.022
140
.00083
.0016
.0045
.011
.022
150
.00085
.0016
.0046
.011
.023
Operating vottage is the sum of applied D.C. voltage
and peak A,C. voltage.
‘A
.5
.1
Base Failure Rate - ~
(T= 125°C Max Rated)
(MIL-C-39014 Styles CKR05-12, 14-19, 73, 74;
IL-C- I 1015 Type B Rated Temperature)
stress
.1
.3
.5
.7
.9
(=)
o
10
::
40
50
60
70
80
90
100
110
120
.
‘b =
T=
s.
.00062
.00063
.00065
.00067
.00068
.00070
.00072
.00074
.00076
.00077
.00079
.00081
.00084
.0012
.0012
.0013
.0013
.0013
.0014
.0014
.0014
.0015
.0015
.0015
.0016
.0016
.0033
.0034
.0035
.0036
.0037
.0038
.0039
.0040
.0041
.0042
.0043
.0044
.0045
.0082
.0084
.0086
.0088
.0090
.0093
.0095
.0097
.010
.010
.010
.011
.011
.017
.017
.018
.018
.018
.019
.019
.020
.020
.021
.021
.022
.023
ooo’[(~)’+11“p(=)
\
-
0003[(33+11‘xp
T-
Ambient Temperature (“C)
s.
Ratio of Operating to Rated Vottage
Operating vottage is the sum of applied D.C. voltage
and peak A.C. voltage.
Ambient Temperature (“C)
Ratio of Operating to Rated Voltage
Operating voltage is the sum of applied D.C. vottage
and peak A.C. voltage.
NOTE: The rated temperature designation (type A,
B, or C) is shown in the pan number, e.g.,
CKG1AW22M).
MIL-HDBK-217F
I
10.10
CAPACITORS,
FIXED,
CERAMIC,
GENERAL
PURPOSE
Environment Factor - n=
Capacitance Factor - WV
L
Capacitance, C (pF)
~cv
6.0
.50
GF
2.0
GM
9.0
Ns
5.0
1.0
36,000
1.3
Nu
240,000
1.6
Ac
4.0
1,100,000
1.9
‘IF
4.0
2.2
‘Uc
8.0
4,300,000
0.11
15
*UF
12
*RW
20
SF
Quality Factor - n=
Quality
s
.030
R
.10
P
.30
M
1.0
L
3.0
MlL-C-l 1015, Non-Est. Rel.
3.0
.
1.0
3300
Xcv = .41C
Lower
GB
.75
240
I
Environment
.40
MF
13
ML
34
c1
610
10
4
10-19
MIL-I-IDBK-217F
10.11
CAPACITORS,
FIXED,
CERAMIC,
SPECIFICATION
MIL-C-20
STYLE
CCR and CC
MIL-C-55681
CDR
I
TEMPERATURE
COMPENSATING
DESCRIPTION
Ceramic, Temperature Compensating,
and Non Est. Rel.
Ceramic, Chip, Est. Rel.
lp = kbZcVXOzE
Failures/l
(MIL-C
)
.1
.3
.00015
.00022
.00033
.00049
.00073
.0011
.0016
.0024
.0036
.00028
.00042
.00063
.000!34
.0014
.0021
.0031
.0046
.0069
~~ W)
10
20
30
40
E
70
80
T.
s-
.00080
.0012
.0018
.0026
.0039
.0059
.0088
.013
.019
1].XP(14.3
= 2.6x1O -9[(:)3+
\
Stress
.5
.7
.0019
,0029
.0043
.0064
.0096
.014
.021
.032
.047
(T;3
E
30
40
50
60
70
80
90
100
110
120
~=
2.6x10
T=
s.
‘g[(~)’+
.00027
.00038
.00055
.00078
.0011
.0016
.0023
.0033
.0047
.0068
.0097
.014
.020
l]exp(143
.00065
.00093
.0013
.0019
.0027
.0039
.0056
.008
,011
.016
.024
.034
,048
(TJ~T
.0040
.0059
.0088
.013
.020
.029
.044
.065
.097
)
I
,
2.2
I
I
\
Quality
~Q
s
.030
.10
.30
1.0
3.0
R
P
M
Non-Est.
Lower
Rel.
I
Environment
Factor - XE
~E
I
I
GB
1.0
GF
2.0
10
%
N~
5.0
Nu
17
%c
4.0
‘IF
8.0
*UC
16
*UF
35
*RW
24
Ambient Temperature (“C)
Ratio of Operating to Rated Voltage
I
1
.50
SF
)
4
10
Environment
.0013
.0019
.0027
.0039
.0056
.008
.011
.016
.023
.034
.048
.069
.099
)
I
I
.75
1.0
1.3
1.6
1.9
Quality Factor - XQ
)1
Operating vottage is the sum of applied D.C. voftage
and peak A.C. voltage.
I0-20
7
81
720
4,100
17,000
58;000
0.12
Zcv = .59C
.9
Base Failure Rate - ~
(T= 125oC Max Rated)
(MIL-C-20 Styles CC 5-9,13-19,21,22,26,27,
31,33,
36, 37, 47, 50-57, 75-79, 81-83, CCR 05-09,13-19, 5457, 75-79, 81-83, 90; MIL-C-55681 All CDR Styles)
Stress
TA (“C)
.1
.3
.5
.7
.9
.00009
.00014
.00019
.00028
.00040
.00057
.00082
.0012
.0017
.0024
.0034
.0049
.0071
‘Cv
.59
1
Ambmnt Temperature (%)
Ratio of Operating to Rated Voltage
.00005
.00007
.00010
.00014
.00021
.00030
.00042
.00061
.00087
.0012
.0018
.0026
1 .0037
Est.
Capacitance, C (pF)
L
45, 85, 95-97)
Operating vottage is the sum of applied D.C. vottage
and maak A.C. vottaoe.
0
–
Capacitance Factor - ~,v
Max Ratecf)
Stybs CC 20,25,30,32,35,
CHIP
OG Hours
Base Failure Rate - ~
(r-85%
AND
MF
13
ML
34
I
610
I
MIL-HDBK-217F
10.12
SPECIFICATION
MIL-C-39003
CAPACITORS,
FIXED,
z
n Failures/l
Q E
~ (“c)
.1
.3
.5
.7
o
.0042
.0043
.0045
.0048
.0051
.0057
.0064
.0075
.0092
.012
.016
.024
.039
.0058
.0060
.0063
.0067
.0072
.0079
.009
.011
.013
.017
.023
.034
.054
.012
.012
.013
.014
.015
.016
.019
.022
.027
.034
.047
.07
.11
.026
.027
.028
.030
.032
.035
.040
.047
.050
.074
.10
.15
.24
T.
s=
.
OG Hours
Circuit Resistance, CR (ohms/vott)
Stress
Lb = .00375 [(~)3
SOLID
Series Resistance Factor - Zsl
Base Failure Rate - ~
90
100
110
120
TANTALUM,
DESCRIPTION
Tantatum Electrolytic (Solid), Est. Ret.
STYLE
CSR
‘P = %mCV%R
10
20
30
40
50
60
70
80
ELECTROLYTIC,
1]..p(2.6
% R
.9
.051
.052
.055
.058
.0’63
.069
.078
.092
.11
.14
>0.8
.066
>0.6 to 0.8
.10
>0.4 to 0.6
.13
>0.2 to 0.4
.20
>0.1
.27
to 0.2
0 to 0.1
(T~&
)
‘
)
CR
.33
= Eff. Res. Between Cap. and Pwr. Supply
Voltage Appiied to Capacitor
Ambient Temperature (“C)
Ratio of Operating to Rated Vottage
operating votiage is the sum of applied D.C. vohage
and peak A.C. voltage.
Envimment
Factor - YC=
L
Environment
Capacitance Factor - WV
Capacitance, C @F)
‘Cv
0.5
.75
1.0
1.3
1.6
1.9
.003
.091
1.0
8.9
50
210
710
n~v = 1 .Oc
0.12
Quality Faotor-x.
●
Quality
D
c
s
B
R
P
M
L
Lower
u
+%-I
0.010
0.030
0.030
0.10
0.30
1.0
1.5
10
GB
1.0
GF
2.0
%
8.0
NS
5.0
Nu
14
AC
4.0
‘IF
5.0
*UC
12
*UF
20
‘RW
24
SF
.40
MF
11
ML
29
CL
530
MIL-HDBK-217F
10.13
CAPACITORS,
FIXED,
ELECTROLYTIC,
NON-SOLID
DESCf IPTION
Tantalw 1, Electr’olyk (Non-Solid)
Tantalw I, Electrolytic (Non-Solid),
STYLE
CL
CLR
SPECIFICATION
MIL-C-3965
MIL-C-39006
TANTALUM,
kp = kbXcVZCXQxE
Failures/l
06 Hours
Base Failure Rate - ~
Base Failure Rate - ~
(T= 175eC Max Rated)
tllL-C-3965 Sty Ies CL1O, 13, 14, 16-18)
(-r = 85°C Max Rated)
(MIL-C-3965 Styles CL24-27, 34-37)
TA (“C)
.1
0
10
20
30
40
50
60
.0021
.0023
.0026
.0030
.0036
.0047
.0065
.3
.0029
.0032
.0036
.0042
.0051
.0066
.0091
Est. Rel.
stress
.5
.0061
.0067
.0075
.0087
.011
.014
.019
TA (%
.7
.9
.013
.014
.016
.019
.023
.029
.041
.026
.028
.031
.036
.044
.057
.079
.1
.3
.5
.7
.9
o
.0017
.0024
.0050
.011
.021
10
.0017
.0024
.0051
.011
.021
20
.0018
.0025
,0052
.011
.022
30
.0018
.0025
.0053
.011
.022
40
.0019
.0026
.0054
.012
.023
50
.0019
.0027
.0056
.012
.023
60
.002
.0028
.0058
,013
.024
70
.0021
.0030
.0062
.013
.02L
80
.0023
.0032
.0066
.014
.028
90
.0025
.0035
.0072
.016
.030
100
.0028
.0039
.0080
.017
.034
110
.0032
.0044
.0092
.020
.039
120
.0037
.0052
.011
.023
130
.0046
.0064
.013
.029
140
.0059
.0082
.017
.037
150
.0079
.011
.023
.049
160
.011
.016
.033
.071
170
.018
.025
.051
~~ool~
T
s.
=
Ambient Temperature (“C)
Ratio of Operating to Rated Voltage
Operating voltage is the sum of applied D.C. voltage
and peak A.C. voltage.
Base Failure Rate - ~
(T= 125°C Max Rated)
(MIL-C-3965 Styles CL20-23, 30-33, 40-43, 46-56, 64i7, 70-73; and all MI L-C-39006 Styles)
Stress
.7
.9
,1
.3
TA (“C)
.5
o
10
20
30
40
50
60
70
80
90
100
110
120
.0018
.0019
.0020
.0021
.0023
.0025
.0028
.0033
.0041
,0052
.0071
.011
,017
Ab=.00165[(~)3+
T=
s.
.0026
.0026
.0028
.0029
.0032
.0035
.0040
.0046
.0057
.0073
.010
.015
.024
.0053
.0055
.0057
.0061
.0066
.0072
.0082
.0096
.012
.015
.021
.031
.050
l]exp(2.6
.011
.012
.012
.013
.014
.016
.018
.021
.025
.033
.045
.066
.11
(Tj~~
.022
.023
.024
.026
.028
.030
.034
.040
.049
.084
kb=.00165[(~)3+
)
‘0
)’-0)
)
Ambient Temperature (“C)
Ratio of Operating to Rated Vottage
Operating vottage is the sum of applied D.C. voltage
and peak A.C. voltage.
10-22
l]exp(2.6(~
T.
Ambient Temperature (“C)
s=
Ratio of Operating to Rated Vottage
Operating voltage is the sum of apphed D.C. voftagc
and peak A.C. voltage.
I
MIL-HDBK-217F
10.13
I
Capadtanoe
I
I
I
CAPACITORS,
Capadance, C (p.F)
I
.091
I
Constmction
~cv
.70
1.0
1.3
Factor - ~
Type
Quality
s
.030
R
.10
P
.30
M
1.0
L
1.5
MIL-C-3965,
●
●
●
NON-SOLID
Non-Est. Rel.
3.0
7CC
I
Slug, All Tantalum
Foil, Hermetic’
Slug, Hermetic
Foil, Non-Hermetic
Slug, Non-Herrnetk
TANTALUM,
Quality Factor - nfi
WV = .82C0”066
Construction
ELECTROLYTIC,
Factor - ~v
20
1100
I
FIXED,
10
Lower
.30
1.0
2.0
2.5
3.0
Environment
Factor - z=
L
Environment
●Type
of Seal Identified as Follows:
GB
1.0
GF
2.0
1) MIL-C-3965 (CL) - Note Last Letter in Part Number:
G - Hermetio
E - Non-Hermetic
GM
Example: CL1 OBC700TPQ is Hermetic
Ns
2) MIL-C39006 (CLR) - Consult Individual Part
Specification Sheet (slash sheet)
Nu
NOTE:
Foil Types -
CL 20-25,30-33,40,41,51
CLR 25,27,35,37,53,71,73
-54, 70-73
Slug Types - CL 10, 13, 14, 16, 17, 18,55,56,
64-66, 67
CLR 10, 14, 17,65, 69,89
All Tantalum - CL 26,27,34-37,42,43,
CLR 79
46-49
fiE
10
6.0
16
Ac
4,0
‘IF
8.0
‘Uc
14
‘UF
30
‘RVV
23
SF
.50
MF
13
ML
34
cL
610
10-23
MIL-HDBK-217F
10.14
CAPACITORS,
FIXED,
ELECTROLYTIC,
DESCRIPTION
Ektrolytic,
Aluminum Oxide, Est. Rel. and Non-Est. Rel.
STYLE
CUR and CU
SPECIFICATION
MIL-C-39018
—
ALUMINUM
Lp = kbZCvmQzE
Failures/l
06 Hours
Base Faiture Rate - ~
Base Failure Rate - ~
(T= 125°C Max Rated)
(All h L-C-3901 8 Styles Except 71, 16 and 17)
stress
TA (~)
.1
.5
.7
.9
.3
(T= 85°C Max Rated)
[M IL-C-39018
stvle 71 ~
Stfws
T* (%)
0
;:
30
40
50
60
70
;=.O
.1
.3
.5
.7
.0095
.012
.017
.023
.034
.054
.089
.16
.011
.015
.020
.028
.042
.065
.11
.19
.019
.024
.033
.046
.068
.11
.18
.31
.035
.046
.062
.087
.13
.20
.33
.58
o:[(~;~+
.9
.064
.084
.11
.16
.23
.36
.60
1.1
.
l]:;~.og’;-;’
)
T=
Ambient Temperature (“C)
s-
Ratio of Operating to Rated Voftage
Operating voltage is the sum of applied D.C. voltage
and peak A.C. voftage.
Base Faiture Rate - ~
(T= 105”C Max Rated)
(MIL-C-39018
Styles 16 and 17)
Sttess
.7
,1
.3
.5
[A(~)
0
10
20
30
40
50
60
.0070
.0085
.011
.014
.019
.026
.038
.059
.095
::
,0064
.010
.013
.017
.022
.031
.046
.071
.11
.014
.017
.021
.027
.037
.052
.076
.12
.19
.026
.031
.040
.051
.069
.097
.14
.22
.35
s=
=
),
Ambient Temperature (“C)
Ratio of Operating to Rated Voltage
Operating voftage is the sum of applied D.C. voltage
and peak A.C. voltage.
10-24
.011
.021
.038
10
.0065
.0078
.013
.024
.044
20
.0077
.0093
.015
.029
.052
30
.0094
.011
.019
.035
.064
40
.012
.014
.023
.044
,080
50
.015
.019
.030
.057
.10
60
.021
.025
.041
.077
.14
70
.029
.035
.057
.11
.20
80
.042
.050
.083
.16
.28
90
.064
.077
.13
.24
.43
100
.10
.12
.20
.38
110
.17
.21
.34
.63
120
.30
.37
.60
1.1
+ I]exp(s.09
(~)
T.
Ambient Temperature (“C)
s=
Ratio of Operating to Rated Voltage
5 )
Operating voltage is the sum of applied D.C. voltage
and peak A.C. voltage.
I
T
.0067
,,=.00254[(:)3
:=,0
1]:~.og’::;;7;~
.0055
.9
.047
.057
.072
.094
,13
.18
.26
.40
.64
100
O:[($;:+
o
.
MIL-HDBK-217F
CAPACITORS,
10.14
Capacitate
Factor - WV
ELECTROLYTIC,
Environment
Capacitance, C (@)
‘Cv
2.5
v
1.0
1700
1.3
Factor - YC_
k
GB
1.0
GF
2.0
.70
400
ALUMINUM
Environment
.40
55
L
GM
12
6.0
Ns
r
‘Cv
FIXED,
NU
17
5500
1.6
AK
10
14,000
1.9
AIF
12
2.2
*UC
28
32,000
‘UF
35
65,000
2.5
‘RW
27
120,000
2.8
= .34c0”’8
Quality Factor - YCQ
Quality
%Q
s
.030
R
.10
P
.30
M
1.0
Non-Est. Ret.
3.0
Lower
10
SF
.50
MF
14
ML
38
CL
690
MIL-HDBK-217F
10.15
CAPACITORS,
FIXED,
ELECTROLYTIC
ALUMINUM
DESCRIPTION
Aluminum, Dry Electrolyte, Polarized
STYLE
CE
SPECIFICATION
MIL-C-62
(DRY),
Ap = XbXcvZQzE
Hours
~ailures/106
Base Failure Rate - ~
Quality Factor - Xfi
(T
= R’oc.- ----Mar .Ratt?ch
.-. -.-,
\ —--
stress
TA (“C)
.1
.3
0
.0064
::
30
40
50
60
.0078
.0099
.013
.018
.026
.041
.0074
.009
.011
.015
.021
.030
.047
I
Quality
.5
.7
.9
.011
.014
.017
.023
.031
.046
.071
.020
.024
.030
,040
.055
.08
.12
.034
.042
.053
.070
.096
.14
.22
7rQ
3.0
MIL-SPEC
10
Lower
Environment
Factor - n=
L
Environment
:~o”’
:1’’’:0’
(i)‘;;
‘;5)3
T.
Ambient Temperature (“C)
s-
Ratio of Operating to Rated Voftage
Capacitance,
C (vF)
3.2
62
400
1600
4800
12,000
26,000
50,000
91,000
~cv
= .32C
GF
GM
N~
Operating voltage is the sum of applied D.C. vottage
and peak A.C. voltage.
Capacitance
GB
Factor - Xcv
~cv
.40
n~
7
1.0
2.0
12
6.0
Nu
17
*IC
10
‘IF
12
*UC
28
*UF
35
*RW
27
.50
SF
.70
1.0
1.3
1.6
1.9
2.2
2.5
2.8
~F
14
ML
38
c1
0.19
I
690
MIL-HDBK-217F
10.16
SPECIFICATION
MIL-C-81
CAPACITORS,
VARIABLE,
CERAMIC
DESCRIPTION
Variable, Ceramic
STYLE
Cv
kp = kbfiQZE Failures/l
06 Hours
Base Failure Rate - ~
(T= 85°C Max Rated)
1 Styles CV 11, 14, 21,31,
32,34,40,
(MIL-CTA (Z)
.1
o
10
20
30
40
50
60
70
1
.0030
.0031
.0033
.0036
.0041
.0047
.0058
.0076
.011
80
Ab=.00224[(~)3
T
s.
=
.3
.5
.016
.017
.018
.020
.022
.026
.031
.041
.058
.086
.069
.073
.080
.089
.10
.13
.17
.24
+ 1].xp(l.,,
Quality Factor - nQ
41)
.7
.9
.18
.10
.20
.21
.24
.20
.34
.4s
.63
.37
.39
.41
.45
.50
.59
.72
.94
1,3
(~)101)
o
(T= 125°C Max Rated)
(M IL-C-81 Styles CV 35, 36)
stress
.1
.3
.5
.7
.0028
.0028
.015
.015
Environment
Factor - n=
L
1
I
Environment
I
xcL
GB
1.0
GF
3.0
Ns
Nu
13
8.0
24
6.0
37
.9
*UF
70
36
.061
.062
.16
.17
.35
.35
‘RW
SF
.0029
.016
.064
.17
.36
.016
.017
.018
.019
.021
.023
.027
.033
.043
.059
.066
.068
.072
.077
.084
.095
.11
.14
.17
.24
,18
.18
,19
.21
.23
.25
.30
.36
.47
.64
.37
.39
.41
.44
.48
.54
.63
.76
.98
1.4
T=
s=
20
‘Uc
.0030
.0031
.0033
.0035
.0038
.0043
,0050
.0062
.0079
.011
~-.00224[(~)3+
Lower
10
;:
I
4
‘iF
30
40
50
%
80
90
100
110
120
MIL-SPEC
AC
Base Failure Rate - ~
x~
I
GM
Ambient Temperature (“C)
Ratio of Operating to Rated Voftage
Operating voltage is the sum of applied D.C. vottage
and peak A.C. voltage.
TA (“C)
Quality
.40
MF
ML
52
1
I
CL
l]exp(l.59(~)101)
Ambient Temperature (“C)
Ratio of Operating to Rated Voltage
Operating vottage is the sum of applied D.C. voltage
and peak A.C. voltage.
10-27
MIL-HDBK-217F
10.17
CAPACITORS,
VARIABLE,
SPECIFICATION
MIL-C-14409
PISTON
STYLE
Pc
TYPE
DESCRIPTION
Variable, Piston Type, Tubular Trimmer
Lp = XbXQnE Failures/l
OG Hours
Quality Factor - nQ
Base Failure Rate - ~
(T. 125°C Max Rated)
(MIL-C-14409 Styles G, Ii, J, L, T)
Stress
.1
.3
.5
.7
TA (“C)
.0030
.0041
.0055
.0075
.010
.014
.019
.025
.034
.047
.063
.086
.12
1:
20
30
40
50
60
70
80
90
100
110
120
$=7.3
.0051
.0070
.0094
.013
.017
.024
.032
.043
.059
.079
.11
.15
.20
X1 O-7 [(~)3+
.013
.010
.024
.033
.044
.060
.082
.11
.15
.20
.27
.37
.51
h
l]exP(1201
.063
.085
.11
.16
.21
.29
.39
.53
.71
.96
1.3
1.8
2.4
(%%)
~er~ting
vohage is the sum of applied
and pe ak A.C. voltage.
4
I’v
Lower
Environment
GB
)
,
D.C. vohage
GF
3.0
GM
-+-l
Ns
Nu
Alc
‘IF
Base Failure Rate - ~
150”C Max Rated)
(MIL-C-1 4409 Characteristic
(T=
0)
,3
.0032
.0042
.0056
.0074
.0099
.013
.018
.023
.031
.041
.055
.073
.097
.13
.17
.23
.1
.0019
.0025
.0033
.0044
.005s
.0077
.010
.014
.018
.024
.032
.043
.057
.076
.10
.13
10
20
30
40
50
%
80
90
100
110
120
130
140
150
.5
.0081
.011
.014
.019
.025
.034
.045
.060
.079
,11
.14
.19
,25
.33
.44
,59
.7
.019
.025
.034
.045
.060
.079
.11
.14
.19
.25
.33
.44
.59
.78
1.0
1.4
.9
.038
.051
.068
,09
.12
.16
.21
.28
.38
.50
.67
.89
1.2
3.0
4.0
20
‘UF
30
‘RW
32
SF
4::
2.8
.50
MF
18
ML
46
c,
I
18
%c
Stress
o
Factor - ZE
Environment
Ambient Temperature (“C)
Ratio of Operating to Rated Vottage
T=
ZQ
MIL-SPEC
.9
.031
.042
.057
.077
.10
.14
.19
.26
.35
.48
.65
.88
1.2
4
Quality
830
4
11ex421
(-))
kb = 7.3 x 10-7
[(33+
,
(“C)
Ambient Temperature
s=
Ratio of Operating to Rated Vottage
Operating voltage is the sum of applied D.C. voltage
and peak A,C. voltage.
T
—-
--
=
.-
—1
m
. ..
----
-r–
----
l——
1
--
I
I
MIL-HDBK-217F
10.18
SPECIFICATION
MIL-C-92
1A (“C)
- ...-.
. .-. --,
.3
.5
.0074
.013
10
.010
20
.7
.9
.032
.076
.15
.017
.044
.10
.21
.014
.023
.059
.14
.28
30
.018
.031
.08
.19
.38
40
.025
.042
.11
.26
.52
50
.034
.057
.15
.35
.70
60
.046
.078
.20
.47
.94
70
.062
.10
.27
.63
80
.083
.14
.36
.85
0
Failures/l
06 Hours
1.0
GF
3.0
%
NU
*IC
XIO-6[(-&)3+
1]
.wfos
Ambient
Temperature
s=
Ratio of Operating
13
8.0
24
6.0
‘IF
10
‘Uc
37
*UF
70
1.3
‘RW
36
1.7
SF
(~)
%
T-
nE
GB
NS
- 1.92
TRIMMER
Environment
stress
.1
AIR
Environment Factor - z~
Base Failure Rate - ~
--
VARIABLE,
DESCRIPTION
Variable, Air Trimmer
STYLE
CT
kp = kb~QmE
\
CAPACITORS,
.50
MF
20
ML
52
CL
950
(“C)
to Rated
Voltage
Operating voltqe
is the sum of applied
and peak A.C. voltage.
D.C. vottag~
Quality Factor - XQ
Quality
MIL-SPEC
Lower
~Q
5
20
10-29
------
r--
MIL-HDBK-217F
10.19
CAPACITORS,
VARIABLE
SPECIFICATION
M IL-C-23 183
AND
FIXED,
GAS
OR
—
VACUUM
STYLE
DESCRIPTION
CG
Gas or Vaa.mm Dielectric, Fixed and Variable, Ceramic or
Glass Envebpe
Lp = kbXcFXQnE
Failures/l
OG Hours
Base Failure Rate - ~
Base Failure Rate - ~
(T. 85°C Max Rated)
(Styles CG 20,21,30,31,32,40-44,
stress
0
10
20
30
40
50
60
70
80
.1
.3
.015
.016
.017
.018
.020
.024
.029
.038
.054
.081
.084
.090
.098
.11
.13
.16
.20
.29
.5
.88
,92
.98
1.1
1.2
1.4
1.7
2.2
3.2
Ambient Temperature
(“C)
Ratio of Operating to Rated
s=
Operating
and peak
voltage
1.9
1.9
2.1
2.2
2.5
2.9
3.6
4.7
6.6
Vottage
is the sum of applied
D.C. voltage
A.C. voltage.
Base Faiture Rate - ~
(T= 100”C Max Rated)
(Styles CG 65, 66)
Stress
.1
o
1:
30
40
50
60
70
80
90
100
~=.0112
T=
s.
.014
.015
.015
.016
,018
.020
.022
.027
.034
.045
.066
[(+)3+
.3
.078
.080
.084
.088
.095
.11
.12
.14
.18
.24
.36
.7
.9
.85
.87
.91
.96
1.0
1.2
1.3
1.6
2.0
2.7
3.9
1.8
1.8
1.9
.5
.30
.33
.34
.36
.39
.43
.49
!59
.74
.99
1.5
l]exP(l.59
Ambient Temperature
(“C)
Ratio of Operating to Rated
;;;
2.4
2.8
3.3
4.2
5.6
8.2
(~)lol)
Voltage
Operating vottage is the sum of applied
and oeak A.C. voltaae.
10-30
m
.1
.3
.5
.7
.9
0
.014
.075
.37
.82
1.7
10
.014
.077
.31
.83
1.8
20
.014
.078
.32
.85
1.8
30
.015
.08
.33
.88
1.9
40
.016
.084
.34
.91
1.9
50
.016
.088
.36
.96
2.0
60
.018
.095
.39
1.0
2.2
70
.019
.10
.42
1.1
2.4
80
.022
.12
.48
1.3
2.7
90
.025
.14
.55
1.5
3.1
100
.031
.17
.68
1.8
3.8
110
.04
.21
.87
2.3
4.9
120
.055
.29
.9
11”’’(15’
(=)’O1;
[(~)3+
T=
.7
.33
.34
.37
.40
.45
.52
.64
.83
1.2
Ab=.o112
(T= 125°C Max Rated)
(stvl@
-- .50)
-.-,
\ -.= .- CG
Strm8
51,60-64,
D.C. voltage
T=
s=
1.2
Ambient TemWrature (“C)
Ratio of Operating to Rated Vottage
Operating vottage is the sum of applied D.C. vottage
and pa ak A,C. voltage.
I .!
.,.
... . .
... .,,
,..
MIL-HDBK-217F
I
10.19
CAPACITORS,
--
‘C F
.10
Fixed
AND
Environment
%
GF
1.0
Variable
GM
Ns
QuaIii
Factor- XQ
Quality
~Q
MIL-SPEC
3.0
Lower
FIXED,
Environment
Configuration Factor - TCCF
Conf~ratkm
VARIABLE
20
GAS
OR
VACUUM
Factor - fiE
~E
1.0
3.0
14
8.0
Nu
27
AC
10
‘IF
18
*UC
70
*UF
108
‘RW
40
.50
SF
MF
NIA
ML
NIA
cL
NIA
MIL-HDBK-217F
10.20
CAPACITORS,
EXAMPLE
—
Example
A 400 VDC
Given:
rated capacitor
type CQ09A1 KE153K3
is being used in a fixed ground
environment, 59C component ambient temperature, and 200 VDC applied with 50 Vrms
@ W Hz.
The Capadtor
specification.
iS Ming
procured
in full accodance
with the applicable
The letters “CQ- h the type designation hdkate that the specification is MIL-C-19978 and that it is a NonEstablished Reliability qualii level. The Ist “K” in the designation indicates characteristic K. The “E” in
the designation corresponds to a 400 vott DC rating. The “153” in the designation expresses the
capacitance
in pioofarads.
The first two digits are signifiint
and the third is the number of zeros to follow.
Therefore, this capacitor has a capacdance of 15,000 picofarads. (NOTE: Picos 10-12, p = 10~
The appropriate model for CQ style capacitors is given in Section 10.3. Based on the given information
the following model factors are determined from the tables shown in Section 10.3. Voltage stress ratio
must account for both the applied
DC volts and the peak AC vottage,
S=
s
=
.68
lb
=
.0082
hence,
DC Volts Applied + ~2 (AC Volts Armlied~ =
DC Rated Voltage
Substitute S = .68 and TA = 55°C into equatbn shown
with CharacteristicK ~ Table.
7ECV
=
7CQ
=
10
~E
=
2.0
~
10-32
.94
= ~
Use
Table Equation (Note 15,000 pF = .015 pF)
ICcv nQ XE = (.0082)(.94)(1
O)(2) = .15 FailuresJl 06 Hours
MIL-HDBK-217F
11.1
SPECIFICATION
STYLE
TF
TP
MIL-T-27
MIL-T-21038
MIL-T-55831
INDUCTIVE
DEVICES,
TRANSFORMERS
DESCRIPTION
Audio, Power and High Power Pulse
Low Power Pulse
IF, RF and Discriminator
Xp = lb~QXE
06 Hours
Failures/l
,
Base Faiture Rate - ~
Maxinwm Rated OperatingTemperature (“C)
~~ 1
TH~ (%)
30
.0024
.0026
.0028
.0032
.0038
.0047
.0060
.0083
.012
.020
.036
.075
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
180
185
NOTE:
1
“
\..oolat?xp
.0023
.0023
.0024
.0025
.0027
.0029
.0032
.0035
.0040
.0047
.0057
.0071
.0093
.013
.019
.030
}1s are valtd onl
fiHS
+ 273\
---=
\
>1706
1705
.0016
.0016
.0016
.0016
.0017
.0017
.0017
.0017
.0017
.0017
.0017
.0017
.0018
.0018
.0018
.0018
.0019
.0019
.0019
.0020
.0020
.0021
.0021
.0022
.0023
.0024
.0018
.0018
.0019
.0019
.0020
.0020
.0021
.0021
.0022
.0023
.0024
.0024
.0025
.0026
.0027
.0028
.0030
.0031
.0032
.0034
.0036
.0038
.0040
.0042
.0044
.0047
.0050
.0053
.0056
.0021
.0022
.0022
.0022
.0023
.0023
.0023
.0024
.0025
.0026
.0027
.0028
.0029
.0031
.0033
.0035
.0038
.0042
.0046
.0052
.0059
.0068
.0079
.0095
.011
.014
.0022
.0023
.0024
.0025
.0026
.0027
.0029
.0030
.0033
.0035
.0039
.0043
.0048
.0054
.0062
.0072
.0085
.010
.013
.016
.020
.0025
.0026
.0027
.0029
.0030
.0032
-
-
Themo
, =4
,~3
1052
lSs
if THS IS not above the temperature rating for a given insulation class.
MIL-T-27 Insdatmn Class 0, MIL-T-21038
Insulation Class C?,and MlL-T-5563I
MIL-T-27 Insulation Class R, MIL-T-21 038 Insulation Class R, and MIL-T-55831
3
4
+-’18’*F=)87
MIL-T-27 Insulation Class S, MlL-T-2I 038 Insulation Class S, md MIL-T-S5631
+’=m2ex’c”:~273)i0
MIL-T-27 Insulation Class V, MIL-T-21 038 Insulation Class T, and MIL-T-s5631
‘
~-om’-’(”:”)””)”
‘
~-m’w”x’(TH:;:73)8”4
Class O.”
Insulation Class A.”
Insulation Class B.”
Insulation Class C,*
MIL-T-27 Insulation Class T and MIL-T-21 038 Insulation Class U.*
MIL-T-27 Insulation Class U and MIL-T-21038
‘w
tnsuhon
)
. Hot Spot Temperature (%),
See Se&h
11.3.
“Rotor to Transformer
Insulanon Class V “
Application
Not-
tor Oatormlnstlon
of Irwulatlon
Class
I
11-1
MIL-HDBK-217F
11.1
INDUCTIVE
DEVICES,
TRANSFORMERS
Quality Factor - ~
Family Type”
Pulse Transformers
1.5
Audio Transformers
3.0
I Lower
I
5.0
I
7.5
8.0
30
Power
Transformers
1 MIL-SPEC
and Filters
RF Transformers
●
12
I
Refer to Transformer
Appllcatlon
Determlnatlon
of Family Typ.
Environment
30
Note
Factor - ZE
Environment
TRANSFORMER
APPLICATION
NOTE:
Insulation Class and Family Type
Determination
MIL-T-27
Example
R
TF
4
I
MIL-T-27
I
Grad,
I
GF
6.0
Alc
‘IF
12
~
symbol
Are:
Power Transformer
and Filter:
Audio Transformer:
10 thru 21, 50 thru 53
Pulse Transformer:
22 thru 36, 54
Example
4
01 thru 09, 37 thru 41
I
I
16
Grade
MIL-T-55631.
8.0
Type I
.
Type
II
Type
Ill
Grade
1
.50
Grade
2
13
Grade 3
34
Class O
610
Grades
and Classes.
.
.
For Use When immersion and
Moisture Resistance Tests are
Required
For Use When Moisture Resistance
Test is Required
For Use in Sealed Assemblies
Class A
.
Class B
-
Class C
Types,
Intermediate
Frequency Transformer
Radio Frequency Transformer
Discriminator
Transformer
24
SF
I
Insulation
The Transformers are Designated
with the following
9.0
X11 OO8COO1
Class
6.0
‘UF
Designation
Q
5.0
7.0
MF
I
Fatity
Family Type Codes
MIL-T-21038
*UC
‘RW
85oC Maximum Operating
Temperature
105°C Maximum Operaiing
Temperature
12SeC Maximum Operating
Temperature
> 125°C Maximum Operating
Temperature
The class denotes the maximum operating
temperature
(temperature
rise plus maximum
ambient temperature).
11-2
576
for
TP
Nu
I
Imldabrl
Clasa
MI L-T-21038
1.0
Ns
m
01
~E
GB
%
Deslgnatlon
MIL-HDBK-217F
11.2
DEVICES,
COILS
DESCRIPTION
Fixed and Variable, RF
Moided, RF, Est. Rel.
STYLE
SPECIFICATION
MIL-C-15305
MIL-C-3901O
INDUCTIVE
Xp = kbnc7cQ7LEFailures/l 06 Hours
Construction Factor - Xc
Base Failure Rate - ~
Maximum Operating Temperature ~C)
TH~ (oC)
30
35
40
45
50
E
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
851
.00044
1052
.00043
.00039
.00048
.00044
.0004
.00053
.0006
.00071
.00087
.0011
.0015
.0023
.0037
.0067
.014
.00046
.00048
.00051
.00055
.0006
.00067
.00076
.00089
.0011
.0013
.0018
.0024
.0036
.0057
.00042
.00043
.00045
.00048
.00051
.00054
.00058
.00063
.00069
.00076
.00085
.00096
.0011
.0013
.0015
.0018
.0022
.0028
1253
1504
.00037
.00037
.00037
.00038
.00038
.00039
.0004
.00041
.00042
.00043
.00044
.00046
.00047
.0005
.00052
.00055
.00059
.00063
.00068
.00075
.00083
.00093
.0011
.0012
0014
Construction
Fixed
Variable
Zc
I
1
2
Quality Factor - ~
Quality
7rQ
s
.03
R
.10
P
.30
M
MIL-C-15305
Lower
1.0
4.0
20
NOTE: The models are valid onty if THS is not above
the tern perature rating for a given insulation class.
“ ~=mmex’(’”:~:’’)””’
,n$u~onc,-$o
MlL-C- 15305
2
‘=m’gexp(’”:;:’”)”
MlL-C-l 5305
InsulationClass A and
MIL.C-3901 o
,~u~~c,wA,
3.
MIL-C-15305
InsulationClass B and
~--19exp(TH::27a)e”7
MIL-C-3901O
InsulationChseeB.”
4.
MIL-C-I 5305
InsulationClass C and
MIL-C-3901O
InsulationClass F .“
‘HS
= Hot Spot Temperature(“C), See Section f 1.3.
“Refer to Coil Appllcetlon Note for Determhmtlon of
Inaulatlon Claes.
11-3
MIL-HDBK-217F
11.2
INDUCTIVE
DEVICES,
—
COILS
COIL
Environment Factor - ZE
NOTE:
Infsulatlon Class
From Part Designation
APPLICATION
Determination
~E
Environment
GB
1.0
GF
4.0
%
Ns
Nu
001
4
I
5.0
MIL--G153O5
I
Insulation
Class Code
Famify
16
5.0
‘IF
7.0
*UC
6.0
*UF
8.0
24
SF
11-4
LT
12
Ac
‘RW
MlL-C-l 5305. All parts in this specification are
R.F. wils. An example type designation is:
.50
MF
13
ML
34
CL
610
The codes used for the Insulation C&ss are:
1,2,3
Class C:
4, 5, 6
Class B:
7, 8, 9
Class O:
10,11,12
Class A:
MI L-C-3901 O. An example type designation per
this specification is:
M
I
Military
Designator
39010/01
I
Document
Sheet
Number
A
I
Insulation
class
MIL-HDBK-217F
11.3
INDUCTIVE
DEVICES,
DETERMINATION
OF
HOT
SPOT
TEMPERATURE
Hot Spot temperature can be estimated as follows:
,
THS=TA+
1.1 (AT)
where:
THS
=
Hot Spot Temperature
TA
=
Inductive Device Ambient Operating Temperature
AT
=
Average Temperature
(“C)
(“C)
Rise Above Ambient (“C)
AT can either be determined by the appropriate “Temperature Rise- Test Method paragraph in the device base
specification (e.g., paragraph 4.8.12 for M IL-T-27 E), or by approximation using one of the procedures
described below.
AT Approximation
Infnrmatinn
..
... .. ... .
.“.
1.
,
,.,
AT Annrqximation
w
—.
—
1
Knnwn
,”....
-,
MIL-C-3901 O Slash Sheet Number
MIL-C-39010/l C-3C, 5C, 7C, 9A, 10A, 13, 14
AT = 15°C
AT = 35°C
tvllL-c-39010/4C, 6C, 8A, 11, 12
2.
Power Loss
Case Radiating Surface Area
3.
Power Loss
Transformer Weight
4.
Input Power
Transformer Weight
(Assumes 80% Efficiency)
w~
=
Power Loss (W)
A
=
Radiating Surface Area of Case (in2).
wt.
=
Transformer Weight (Ibs.)
w,
=
Input Power (W)
.yp.
AT=
125 w@
AT=
11.5 WL/(Wt.).6766
AT = 2.1 w,/(w@66
See below for MIL-T-27
Case Areas
NOTE: Methods are listed in preferred order (i.e., most to least accurate). MIL-C-3901 O are microminiature devices with surface areas less than 1 in2. Equations 2-4 are applicable to devices with
surface areas from 3 in2 to 150 in2. Do not include the mounting surface when determining radiating
surface area,
Case
AF
AG
.
MIL-T-27 Case Radiating Areas (Excludes Mounting Surface)
Case
Case
Area (in*)
Area {in2)
4
GB
33
LB
7
43
GA
LA
Area (in2)
82
98
AH
11
HB .
42
MB
98
AJ
EB
EA
FB
FA
18
HA
JB
JA
KB
KA
53
58
71
72
84
MA
NB
115
117
::
139
146
;;
25
31
11-5’
I
1
MIL-HDBK-217F
I
12.1
ROTATING
DEVICES,
MOTORS
I
I
The following failure-rate model appiies to motors with power ratings betow one horsepower. This model is applicable to
polyphase, capacitor start and run and shaded pole motors. It’s application may be extended to other types of fractional
horsepower motors utilizing rolling element grease packed bearings. The rndel is dictated by two failure modes, bearing
failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and
replaced and are not a failure mode. Typical appkations
include fans and Mowers as well as various other motor
applications. The model is based on Referenoe 4, which oontains a more comprehensive treatment of motor life precktion
methods. The reference should be reviewed when bearing loads exceed 10 percent of rated bad, speeds exceed 24,000
rpm or motor back include motor speed slip of greater than 25 percent.
The instantaneous failure rates, or hazard rates, experienced by motors are not oonstant but increase with time. The
failure rate model in this sectbn is an average failure rate for the motor operating over time period “t”. The motor operating
time period (t-hours) is selected by the analyst. Each motor must be replaced when it reaches the end of this perbd to
make the calculated ~ valid. The averaga failure rate, ~, has been obtained by dividing the cumulative hazard rate by t,
and can be treated as a constant failure rate and added to other part failure rates from this Handbook.
~2
%[
I
=—
1
UB 3+~
x 106 Failures/l 06 H0ur6
1
Bearing & Winding Characteristic Life - aB and aw
TA ~C)
aB (Hr.)
-40
-35
-30
-25
-20
-15
-lo
-5
o
5
10
15
20
25
30
35
40
45
50
aB
aw
310
310
330
370
460
660
1100
1900
3600
6700
13000
23000
39000
60000
78000
86000
80000
68000
55000
10 (
=
(Hr.)
1.9e+08
1.2e+08
7.4e+07
4.78+07
3.1 e+07
2.0e+07
1.4e+07
9.2e+06
6.4e+06
4.5e+06
3.2e+06
2,3e+06
1.6e+06
1.2e+06
8.9e+05
6.60+05
5.oe+05
3.8e+05
2.9e+-5
2357
2’534 ‘7A + 273
)
+
2010 (
[
2357
[ TA + 273
-
aB (Hr.)
55
60
65
70
75
80
85
44000
35000
27000
22000
17000
14000
2.3e+05
1.8e+05
1.4e+05
1.1 e+05
8.8e+04
7.0e+04
11000
5.7e+04
9100
7400
6100
5000
4200
3500
2900
2400
2100
1700
1500
4.6e+04
3.8e+04
3.le+04
2.5e+04
2.1 e+04
1.8e+04
1.5e+04
1.2e+04
1.oe+04
8. 9e+03
7.5e+03
E
100
105
110
115
120
125
130
135
140
1
4500
7A + 273
)
+ 300
aw
(Hr.)
-1
1
1 .83]
aw
=
10
aB
=
Weibull Characteristic Life for the Motor Bearing
aw
s
Weibull Characteristic Life for the Motor Windings
TA
-
Ambient Temperature (“C)
t
=
Motor Operating Time Period (Hours)
NOTE:
TA (oC)
See next page for method to calculate aB and aw when temperature is not constant.
12-1
MIL-HDBK-217F
12.1
ROTATING
DEVICES,
MOTORS
%.ala
Ilation ‘Or cYcled ‘eWr*ure
The following equation can be used to calculate a weghted
(e.g., for bearings substitute aB for all a’s in equation).
characteristic life for both bearings and windings
h1+h2+h3+------hm
hm
—+
al
—+
a2
— +-------—
a3
where:
either (%Bor aw
a=
h,
=
Time at Temperature
h2
=
Time to Cycle From Temperature
h3
=
Time at Temperature
T3
hm
=
Time at Temperature
Tm
al
=
Bearing
(or Winding)
Life at T,
=
Bearing
(or Winding)
Life at T2
‘2
T,
T, + T3
NOTE:
T2=2,
T, to T3
T3 + T,
T4=2
T3
i=
T2
T1
hl
h2
h3
Hours
Thermal
12-2
(h)
Cycle
am
MIL-HDBK-217F
12.2
ROTATING
DEVICES.
SYNCHROS
AND
RESOLVERS
DESCRIPTION
Rotating Synchros and Resolvers
Lp = XbKSZNXE
NOTE:
Synchros and resolvers are predominately used in service requiring only slow and infrequent motion.
M-echanical wearout problenis are infrequent so that the electrical failure mode dominates, and no
mechanical mode failure rate is required in the model above.
Number Of Brushes Factor - ~N
Base FaiUre Rate - ~
TF (%)
Tr (“C)
30
35
40
45
50
55
60
65
70
75
80
%
TF
Failures/l 06 Hours
85
90
95
100
105
110
115
120
125
130
135
.0083
.0088
.0095
.010
.011
.013
.014
.016
.019
.022
.027
Number of Brushes
.032
.041
.052
.069
.094
.13
.19
.29
.45
.74
1.3
= .00535 exp
=
Synchro
3.2
~E
2.0
12
7.0
18
Aic
4.0
‘IF
6.0
*UC
16
‘UF
25
*RW
26
Size 18 or
Larger
SF
MF
14
1.5
1
ML
36
2.25
1.5
CL
680
Size 8 or
Smalier
Size 10-16
2
3
I
Resolver
4
GF
Nu
DEVICE
TYPE
2.5
1.0
NS
%s
3
GB
Frame Temperature (“C)
Size Factor - XS
1.4
L
Environment
GM
If Frame Temperature is Unknown Assume
TF .40 ‘C + Ambient Temperature
2
Environment Factor - YIC=
)85
(T~:~3
%N
.50
I
12-3
—
MIL-HDBK-217F
12.3
ROTATING
DEVICES,
ELAPSED
TIME
METERS
—
DESCRIPTION
Elapsed Time Meters
kp = kbycE
Base Failure Rate - ~
Failures/l 06
Hours
Environment Factor - Xr
w
b
Type
k~
A.C.
20
Inverter Driven
30
Environment
%
1.0
GF
2.0
GM
Commutator D.C.
80
N~
Nu
Temperature
Stress Factor - ZT
Operating T (°C)/Rated T (“C)
XT
12
7.0
18
*IC
5.0
‘IF
8.0
*UC
o to
ZE
16
.5
.5
‘UF
25
.6
.6
*RW
26
.8
.8
1.0
1.0
SF
12-4
.50
MF
14
ML
38
CL
NIA
MIL-HDBK-217F
12.4
ROTATING
DEVICES,
EXAMPLE
Example
Fractional Horsepower Motor operating at a thermal duty cycle of: 2 hours at 10O°C, 8
hours at 20”C, 0.5 hours from 100°C to 20”C, and 0.5 hours from 20°C back to 100”C.
Find the average failure rate for 4000 hours operating time.
Given:
The basic procedure is to first determine operating temperature at each time intewai
temperature when traversing from ow temperature to another, e.g. T2 = (100 + 20/2 = ~“c.
aB and aw at each temperature
to use in the ~
ati
then use these vakes to determine a wei@kf
(or averge
~te~in
average ~
and aw
e~ation.
T,
=
1 OO”C;
aB
=
6100 hours;
aw
=
31000
h2 = h4 = 0.5 hr.
T2
=
60%;
aB
=
35000
hOUfS;
aw
=
180000
h3
T3
=
20”C;
aB
=
39000
hours;
aw
=
1600000 hours
h,
=
=
2 hr.
8 hr.
aB
=
aw
=
=
=
2
6100
2 +0.5+8+0.5
0.5
8
+ 35000
+ 39000
2
31000
2 +0.5+8+0.5
0.5
8
+ 180000
+ 1600000
hOUR
= 19600 hours
0.5
+ 180000
= 146000
hOUB
(3++”0’
(
(4000)2
(19600)3
=
0.5
+ 35000
hours
9.0 FaihxeW
1
+ 146000
X106
)
06 Hours
12-5
MIL-HDBK-217F
RELAYS,
13.1
SPECIFICATION
MIL-R-5757
MIL-R-6106
MI L-R-19523
MIL-R-39016
MIL-R-19648
MIL-R-83725
MIL-R-83726
DESCRIPTION
Mechanical Relay
(Except Class C, Solid State Type)
Lp = &XLZCZCYCXFXQXE
Base Failure Rate - ~
Rated
TA (’W)
—
06 Hours
Load Stress Factor - XL
u
.0060
.0061
.0063
.0065
.0068
.0072
.0077
.0084
.0094
.011
.013
.016
.020
%
75
80
85
90
95
100
105
110
115
120
Failures/l
Temperature
85%+
30
35
40
45
50
55
60
MECHANICAL
125
125”c~
.0059
.0060
.0061
Resist ive’
.05
.10
.20
.30
.40
.50
.60
.70
.80
.90
1.00
.0062
.0064
.0066
.0068
.0071
.0074
.0079
.0083
.0089
.0097
.011
.012
.013
.015
.018
.021
.025
.031
Load Typo -
I
s
XL = @Xp
3.
,8
; :Z
2.72
9.49
54.6
S2
XL = exp
s2~=
~
~L = e’p
~
()
()
2.
Lamp3
—
~2
1.
lnductive2
1.02
1.06
1.28
1.?6
2.72
4.77
9.49
21.4
1.00
1.02
1.08
1.15
1.28
1.48
1.76
2.15
2.72
3.55
Operatino Load Current
Rated Resistive Load Current
()
which switch two different load types,
evaluate XL for each possible stress load type
For single devices
combination and use the worse case (largest ZL).
1“%=
00’5’ex’cA::73)’5”7
00Mex’cAJ~73)’04
Cycling Factor - ~YC
Cycle Rate
2%=
TA
.
21.0
<1.0
Ambient Temperature (oC)
Cycle Rate
(Cycles per Hour)
Contact Form Factor - ~
r
I
to Active Conducti ng Contacts)
Contact Form
~c
I
(Applies
DPST
SPDT
3PST
4PST
DPDT
‘PDT
4PDT
I
‘CYC
(MI L-SPEC)
i-io~
10
0.1
(Cycles per Hour)
6PDT
1.50
1.75
2.00
2,50
3.00
4.25
5.50
8.00
WC
(Lower
>1000
10-1000
NO~
:Values of ZCYC
Quality)
Cycles per Hour 2
100
)
(
I
Cycles per Hour
10
for cycling rates beyond
the
basic design limitations of the relay are not valid.
Design specifications should be consulted prior to
I
‘Va’uation
‘f ‘CYC.
13-1
I
I
II
h41L-HDBK-217F
13.1
MECHANICAL
RELAYS,
Oualhy
%
1
I
i
~tion
con-
Construction Type
I
b
I
.10
R
P
x
.30
.45
I
u
M
L
Non-Est.Rol.
.60
I
Dry Rwd
Ifbwmv[
d In@
:::
3.0
I MofcuwWottod
18
6
11131.
I
12
6
5
ArmuW(lmngand
Envimnmont Factor -~
10
$tE
,
Environment
MIL-SPEC
GB
1.0
5.0
ArrnmW@(081anc0d
I
A~
7.0
15
9.0
20
Auc
11
20
%F
12
36
46
1’40
.50
SF
%
1.0
I
Elut mfiic
Tiu90Dd8y,
L&w I
Mching,
MqymtiZ
5-20
w
Mdiurn
IPm-
72
25
I
%
cl
66
CWMctom
m
Cwu?t)
I
I
,.
Uucury Wmttod
B8bcod Arwnturo
vaCwm (Gk!m)
Vaafwl (CkmmiC)
An
I short] ‘
2
6
M
9
12
1 -1-1
10
10
40
5
5
20
5
10
11
I
WA
WA
w
I
A
78
27
*IC
MwcuryWetted
24
8.0
N
1
Hqh Spood
20
20
100
I
NS
Iw
B8mcul Ammtuf6110
10
AwnmJro(short)
100
u
15
GM
i
Poi8fizod
2.0
2.0
%
LowOrOudity
=1
I
(short)
Wchankd Latching
OatuK#d
. Ann8tufo
1~
6
2
7
12
z
10
I
5
-.
I
20
1
10
I
MIL-HDBK-217F
13.2
SPECIFICATION
MIL-R-28750
MIL-R-83726
RELAYS,
SOLID
STATE
AND
TIME
DELAY
DESCRIPTION
Relay, Solid State
Relay, Time Delay, Hybrid and Solid State
The most accurate method for predicting the failure rate of solid state (and solid state time delay) relays is to sum
the failure rates for the individual components which make up the relay. The individual component failure rates
can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or
from the Parts Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has
about the components being used. If insufficient information is available, the following cfefautt model can be
used:
~
= ~X@E
Failure@106 Hours
Base Faiiure Rate - ~
Environment Factor - Xr
Relay Type
Environment
Solid State
.40
Solid State Time Delay
.50
GB
1.0
GF
3.0
GM
Hybrid
.50
I
MIL-SPEC
Lower
6.0
Nu
17
*tc
12
‘IF
19
‘Uc
21
1.0
*UF
32
4.0
‘RW
23
~Q
I
12
NS
Quality Factor - ZQ
Quality
nE
SF
.40
MF
12
ML
33
CL
590
13-3
,
+
MIL-HDBK-217F
14.1
SPECIFICATION
MIL-S-3950
MIL-S-8805
MIL-S-8834
SWITCHES,
Xp = kb7tcyc7cL7rc7zEFailures/l
Snap-action
I
I
Non-snap Action
MIL-SPEC
.00045
06 Hours
1 Lower Quality
Contact Form
xc
I
SPST
DPST
SPDT
3PST
4PST
DPDT
3PDT
4PDT
6PDT
1.0
1.5
1.7
2.0
2.5
3.0
4.2
5.5
8.0
I
.0027
PUSHBUTTON
Contact Form and Quantity Factor - xc
Base Failure Rate - ~
I
OR
DESCRIPTION
Snap-action, Toggle or Pushbutton,
Single Body
MIL-S-22885
MIL-S-83731
Description
TOGGLE
.034
.040
Cycling Factor - Zcyc
b
Switching Cycles
per Hour
*CYC
s I Cycle/Hour
1.0
Environment Factor - nE
>1 Cycle/Hour
Number of Cycles/Hour
Load Stress Factor - ~L
Stress
s
0.05
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Resistive
1.00
1.02
1.06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4,77
Load Type Induct ive
1.02
1.06
1.28
1.76
2.72
4.77
9.49
21.4
XL
=
exp (S/.8)2
for Resistive Load
XL
=
exp (S/.4)2
for Inductive Load
~L
=
exp (S/.2)2
for Lamp Load
GB
1.0
GF
3.0
18
GM
Lamp
1.06
1,28
2.72
9.49
54.6
Ns
8.0
NU
29
Alc
10
‘IF
18
‘Uc
13
*UF
22
‘RW
46
SF
Operating Load Current
Rated Resistive Load Current
s=
~E
Environment
.50
MF
25
ML
67
CL
1200
NOTE: When the switch is rated by inductive load,
then use resistive XL.
14-1
I
1,.,
*mm..
I,
,-
I
.AA1.4WI
.4
WI.*-
fi
.4Knw
I
MIL-HDBK-217F
14.2
SWITCHES,
BASIC
SENSITIVE
T
SPECIFICATION
MIL-S-88f)5
DESCRIPTION
Basic Sensitive
Ap =L7C
~ ~YCXLZE
Failures/l
06 Hours
Cycling Factor - ncyc
Base Failure Rate - ~
%=%’JE’%C
>0.002
~
= ~E
+ n~
inches)
(if Actuation Differential is
<0.002
inches)
n = Number of Active Contacts
Description
MIL-SPEC
.10
.10
%C
.00045
.23
‘bO
.0009
.63
Load StreSs Factor -XL
Resistive
1.00
1.02
1.06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4.77
:::
0.6
0.7
0.8
0.9
1.0
I
51 Cycle/Hour
I
>1 Cycle/Hour
1.0
I
I
I
Number of
Cycles/Hour
I
Load Type
Inductive
1.02
1.06
1.28
7.76
2.72
4.77
9.49
21.4
Environment Factor - xc
Environment
GB
1.0
GF
3.0
%
Ns
Lamp
1.06
1.28
2.72
9.49
54.6
18
8.0
N“
29
*IC
10
‘IF
‘Uc
18
13
‘UF
22
*RW
46
.50
SF
s=
Operatin~ Load Current
Rated Resistive Load Current
nL
=
exp (S/.8)2
for Resistive Load
XL
=
exp (S/.4)2
for Inductive Load
~L
=
exp (S/.2)2
for Lamp Load
MF
25
ML
67
Ci
NOTE: When the Switch is Rated by Inductive
Load, then use Resistive XL.
I 4-L
‘CYC
Lower Quality
%E
Stress
s
0.05
0.1
0.2
0.3
Switching Cycles
per Hour
(if Actuation Differential is
1200
I
MIL-HDBK-217F
14.3
SWITCHES,
ROTARY
DESCRIPTION
Rotary, Ceramic or Glass Wafer, Silver Alloy Cotiacts
SPECIFICATION
MIL-S-3786
Failures/l
kp = lb7ccycKL7cE
06 Hours
Cycling Factor - ~yc
Base Failure Rate - ~
b
Switching Cycles
per Hour
Base failure rate model (~:
(for Cemrnc RF Wafers)
%=%E’%F
(for Rotary Switch Medium
%=%E+”~G
Power Wafers)
n = Nu~r
I
I
s 1 Cycle/Hour
I
> 1 Cycle/Hour
MIL-SPEC
Lower Quality
‘b E
.0067
.10
‘bF
.00003
.02
%G
.00003
.06
Number of Cycles/Hour
Resistive
1.00
1.02
1.06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4.77
Inductive
1.02
1.06
1.28
1.76
2.72
4.77
9.49
21.4
GB
1.0
GF
3.0
18
N~
Load Type
m
Environment
GM
Load stress Faotor - ~L
Lamp
1.06
1.28
2.72
9.49
54.6
Operating Load Current
Rated Resistive Load Current
XL
=
exp (S/.8)2
for Resistive Load
XL
=
exp (S/.4)2
for Inductive Load
exp (S/.2)2
for Lamp Load
~L =
I
Environment Factor - nv
s.
1.0
I
of Active co~ta~s
Description
Stress
s
0.05
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
‘CYC
NOTE: When the Switch is Rated by Inductive Load,
then use Resistive XL.
1
8.0
Nu
29
Alc
10
‘IF
18
%
13
‘UF
22
‘RW
46
SF
,
-
.50
MF
25
ML
67
CL
1200
,.
MIL-HDBK-217F
14.4
SWITCHES,
THUMBWHEEL
—
SPECIFICATION
MIL-S-2271O
Line
DESCRIPTION
Switches, Rotary (Printed Circuit) (Thumbwheel, lnand Pushbutton)
Zp = (~1
CAUTION:
+ XN %2) XCYCZLXE
Failures/l
06 Hours
This model applies to the switching function only. The model does not consider the contribution of any
discrete components (e.g., resistors, diodes, lamp) which may be mounted on the switch. If significant
(relative to the switch failure rate), the failure rate of these devices must be calculated using the
appropriate sectionof this Handbook and added to the failure rate of the switch.
This model applies to a single switch seotion. This type of switch is frequently ganged to provide the
required function. The model must be applied to each section individually.
1
Cycfing Factor- XCYC
Base Failure Rate - kbl and %2
——
MIL-SPEC
Description
Lower Quality
Switching Cycles
Der Hour
I
I
%1
.0067
.086
‘b 2
.062
.089
Number
I
of Active Contacts
Load Stress Factor - ZI
1.00
1.02
1.06
1.15
1.28
1.48
1.76
2.15
2.72
3.55
4.77
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
> 1 Cycie/Hour
Environment
I
Number of Cycles/Hour
1.06
1.28
2.72
9.49
54.6
1.02
1.06
1.28
1.76
2.72
4.77
9.49
21.4
1.0
GF
3.0
18
N~
exp (S/.8)2
for Resistive
XL
=
exp (S/.4)2
for Inductive Load
XL
=
exp (S/.2) 2
for Lamp Load
8.0
Nu
29
Aic
10
‘IF
18
‘Uc
=
~E
GB
Lamp
XL
NOTE:
14-4
Load Type
inductive
Operating Load Current
Rated Resistive Load Current
s=
I
1.0
Environment Factor - x=
I
Resistive
s 1 Cycle/Hour
‘CYC
Factor - ZN
~N = Number of Active Contacts
Stress
s
0.05
I
I
13
‘U F
22
‘RW
46
.50
SF
Load
When the Switch is Rated by Inductive
Load, then use Resistive XL.
MF
25
ML
67
CL
1200
I
MIL-HDBK-217F
I
14.5
SPECIFICATION
M IL-C-55629
MIL-C-83363
MIL-C-39019
w-c-375
DESCRIPTION
Circuit Breakers,
Circuit Breakers,
Circuit Breakers,
Circuit Breakers,
SWITCHES,
CIRCUIT
BREAKERS
Magnetic, Unsealed, Trip-Free
Remote Control, Thermal, Trip-Free
Magnetic, Low Power, Sealed, TripFree Service
MoJded Case, Branch Circuit and Service
I
= &cnUZQKE
06 Hours
Failures/l
Base Failure Rate - ~
Quality Factor - XQ
Description
Lb
Quality
*Q
I
1
1
I
/
I
I
Magnetic
.020
I
Thermal
I
.038
I
I
Thermal-Magnetic
I
.038
I
i
MIL-SPEC
1.0
Lower
8.4
I
*
Environment Factor - n=
Environment
Configuration
Factor - XC
Configuration
SPST
DPST
3PST
4PST
1.0
2.0
3.0
4.0
Use Factor - m t
u
Use
Not Used as a Power
OtiOff Switch
Also Used as a Power
On/Off Switch
GB
1.0
GF
2.0
Zc
GM
15
Ns
8.0
Nu
27
An
7.0
‘IF
9.0
*UC
11
*UF
12
*RW
46
lru
1.0
SF
10
.50
MF
25
ML
66
CL
tWA
d
14-5
n7c
I
I
1
.
----
.
..A
Ann
MIL-HDBK-217F
I
I
15.1
I
CONNECTORS,
GENERAL
(EXCEPT
PRINTED
CIRCUIT
BOARD)
I
I
s
M
M
M
M
M
M
M
M
M
M
DESCRIPTION
SPECIFICATION”
Rack and Panel
M IL-C-24308
M IL-C-28748
IL-C-28804
.M
M IL-C-83513
M
Cimdar
M L-C-5015
M IL-C-26482
M 1~
M L-C-38999
L-C-81 511
I
●1JOTE: See following page for connector configurations.
EDIFICATION*
.“C-3607
.-c-3643
.-C-3650
.-c-3655
.-C-25516
.-(2-3901 2
.-C-55235
.-c-55339
.-C-3767
.-C-22992
DESCRIPTION
Coaxial, RF
Power
Triaxial, RF
MIL-C-49142
Ap = AbZ~ZpnE Failures/l 06 Hours
APPLICATION
NOTE:
The failure rate model is for a mated pair of connectors. It is sometimes desirable to assgn
half of the overall mated pair connector (i.e., single connector) failure rate to the line replaceable unit and half to the
prediction to allow a
chassis (or backplane).
An example of when this would be beneficial is for input to maintainability
failure rate weighted repair time to be estimated for both the LRU and chassis. This accounting procedure could be
significant if repair times for the two halves of the connector are substantially different. For a single connector divide kp by
two.
Base Failure Rate - ~
Base Faiture Rate - ~
To (oC)
Al
.00006
.00008
;:
30
40
50
60
70
80
r
90
100
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
-
.00009
.00011
.00014
.00016
.00020
.00023
.00027
.00032
.00037
.00043
.00050
.00059
.00069
.00080
.00094
.0011
.0013
.0016
.0019
.0023
.0028
.0034
.0042
.0053
Insert Material*
f32
&
.00025
.00033
.00044
.00057
.00073
.00093
.0012
.0015
.0019
.0023
.0029
.0036
.0045
.0056
.0070
.0087
.011
.014
.018
.022
.029
.0021
.0026
.0032
.0040
.0048
,0059
.0071
.0087
.011
.013
.016
.020
.024
(oont’d)
D4
.0038
.0048
.0062
.0078
.0099
.013
,016
.020
.026
.033
.043
.056
.074
“ ff a mating pair of connectors uses two types of
insert materials, use the average of the base failure
rates for the two insert material types. See following
page for inserl material determination.
‘ . ~=
.020 ~xp
~-lsgz.o
((0+=’)+
2. ~=
.431
3. ~=
.190e~p
exp
4. ~ = .770 exp
To =
To
=
~0x73)53’;
((.+
’7’)+
(R:’y”)
T-’073.6
((0+4+
(%:7’)42’)
T-1298.0
~-1528.8
((0+27’)+
~0&:73)4”72)
Internal Contact Operating Temperature (“C)
Connector Ambient Temperature + Insert
Temperature Rise
See folbwing page for Insett Temperature Rise
Determination.
MIL-HDBK-217F
15.1
CONNECTORS,
GENERAL
(EXCEPT
PRINTED
Insert Material
Determination
—
—
‘-Possible Insert
Materials
Conf guration
Specification
A
B ‘c
D
Rack and Panel
MIL-C-28748
x
M IL-C-83733
x
MIL-C-24308
x
x
M IL-C-28804
x
x
MIL-C-83513
x
x
Circular
I
MIL-C-5015
MIL-C-26482
MIL-C-28840
MIL-C-38999
MIL-C-8151 1
MI L-C-83723
x
x
x
x
x
x
x
x
x
x
x
x
x
x
x
Power
MI L-C-3767
MIL-C-22992
Coaxial
MI L-C-3607
MIL-C-3643
MIL-C-3650
MI L-C-3655
MIL-C-25516
MIL-C-39012
MI L-C-55235
MIL-C-55339
x
:
MIL-C-49142
x
x
I
Triiial
Insert
Material
Type
A
B
c
D
Common Insert Materials
Vitreous Glass, Alumina
Ceramic, Polyimide
Diallylphtalate, Melamine,
Fluorosilicione, Silicone
Rubber, Polysulfone,
Epoxy Resin
Polytetrafluorethy lene
(Teflon),
Chbrotrifluorethylene
(Kel-f)
Polyamide (Nylon),
Polychloroprene
x
x
x
x
x
x
Temperature
Ran~e (“C)*
-55 to 250
*
CIRCUIT
BOARD)
Insert Tempe rature Rise (AT “I ) Determination
ContacI
12
16
20
1
2
T
1
2
5
8
3
13
4
4
8
13
19
5
;
5
18
27
6
3
8
7
4
10
23
36
46
13
30
8
5
16
57
9
37
6
70
10
7
45
19
41
15
15
96
70
26
20
25
106
39
54
30
72
35
40
92
w
AT
=
0.989 (i)l ’85
22 Gauge Contacts
AT
=
0.640 (i)’ “85
20 Gauge Contacts
AT
=
0.274 (i)’ ’85
16 Gauge Contacts
AT
=
0.100 (i)l “85
12 Gauge Contacts
AT
i
=
Insert Temperature Rise
=
Amperes
per Contact
RF Coaxial Connectors
AT= 5°C
RF Coaxial Connectors
(High Power Applications)
AT = 50”C
-55 to 200
Mating/Unmating
-55 to 125
-55 to 125
~ne
These temperature ranges indicate maximum
=pability of the insert material only. Connectors
Jsing these materials generally have a reduced
emperature range caused by other considerations of
:onnector design. Applicable connector
specifications contain connector operating
emperature range,
Factor - KK
Mating/Unmating Cycles*
(per 1000 hours)
o to .05
> .05 to .5
>.5t05
>5t050
> 50
●One cycle includes both connect
nK
1.0
1.5
2.0
3.0
4.0
and disconnect.
—
I
I
MIL-HDBK-217F
I
15.1
I
CONNECTORS,
GENERAL
(EXCEPT
PRINTED
CIRCUIT
BOARD)
I
Active Pins Factor - n
Number of
Active
Cent acts
Xp
1.0
1.4
1.6
1.7
;
3
4
5
6
;::
:
9
10
11
12
13
14
15
16
17
18
19
20
25
30
35
40
45
50
55
60
:::
2.4
2.6
2.7
2.9
3.0
3.1
3.3
3.4
3.6
3.7
3.9
4.0
4.8
5.6
6.5
7.4
8.4
9.5
11
12.
Environment Factor - XE
Number of
Active
~E
Contacts
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
180
185
190
195
200
q
=
0.51064
N
=
Number of Active Contacts
13
15
16
18
E
23
25
27
30
32
35
37
40
43
46
50
53
57
61
65
69
74
78
83
89
94
100
Environment
MIL-SPEC
Lower Quality
GB
1.0
2.0
GF
1.0
5.0.
%
8.0
21
Ns
5.0
10
Nu
13
27
*IC
3.0
12
%
5.0
18
%c
8.0
17
‘UF
12
25
‘RW
19
37
SF
.50
.80
MF
10
20
ML
27
54
CL
490
970
An active contact is the conductive element in a
oonnector which mates with another element for
the purpose of transferring electrical energy. For
ooaxial and triaxial oonneotors, the shield
contact k oounted as an active contact.
15-3
1
I
MIL-HDBK-217F
15.2
CONNECTORS,
PRINTED
CIRCUIT
BOARD
DESCRIPTION
One-Piece Connector
Two-Piece Connector
SPECIFICATION
MIL-C-21097
MIL-C-55302
Failures/l
Base Faiture Rate - L
To (“C)
o
10
20
30
40
50
60
70
80
90
100
.00012
.00017
.00022
.00028
.00037
.00047
.00059
.00075
.00093
.0012
.0015
To (<)
Ab
110
120
130
140
150
160
170
180
190
200
.0018
.0022
.0028
.0035
.0044
.0055
.0069
.0088
.011
.015
06 t-iours
Connector Ter
Amperes
Per Contact
mrature Ri: ! (AT ‘C) Determination
c tntad Guac
26
22
20
I
1
4
8
13
19
2
8
16
27
41
1
2
3
4
5
AT = 2.100 (i)’.85
1
2
5
8
13
26 Guage Contacts
AT = 0.989 (i)l .85
22 Guage Contacts
AT = 0.640 (i)’-85
20 Guage Contacts
AT = Contact Temperature Rise
i
To = Internal Contact Operating
Temperature
=
Amperes per Contact
I
(°C)
Mating/Unmating
Factor - XK
l’vlating/Unmating Cycles*
(Perl 000 Hours)
o to .05
> .05 to .5
>.5t05
>5t050
>50
●
1.0
1.5
2.0
3.0
4.0
A cycle is defined as the mating and unrnating
of a connector.
15-4
I
MIL-HDBK-217F
15.2
CONNECTORS,
Active Pins Factor - z
Number of
Active
Contacts
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
25
30
35
40
45
50
55
60
1.0
1.4
1.6
1.7
1.9
%
75
80
2.0
E
:::
2.4
2.6
2.7
2.9
196
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
180
185
190
195
200
H
3.3
3.4
3.6
3.7
:::
4.8
5.6
6.5
7.4
!;
11
12
np =
exp
N-1
()
~
CIRCUIT
BOARD
Environment Factor - ~
Number of
Active
Contacts
*P
PRINTED
~E
13
15
16
18
19
:;
25
27
30
32
35
37
40
43
46
50
53
57
61
65
69
74
78
Environment
MIL-SPEC
Lower C?ualit~
GB
1.0
2.0
GF
3.0
7.0
GM
8.0
17
Ns
5.0
10
Nu
Alc
13
26
6.0
11
*UC
14
22
6.0
14
*UF
11
22
‘RW
19
37
SF
.50
.80
MF
10
20
ML
27
54
490
970
c,
:;
94
100
q
c1
=
0.51064
N
=
Number of Active Pins
An active contact is the conductive element
which mates with another element for the
purpose of transferring electrical energy.
15-5
MIL-HDBK-217F
DESCRIPTION
IC Sockets, Plug-in
SPECIFICATION
MIL-S-83734
‘P = %ZPXE
?b~
Type
r
~E
Environment
I
.00042
All MIL-S-83734
06 Hours
Environment Factor - XE
Base Failure Rate - ~
I
Failuresll
GB
1.0
GF
3.0
14
GM
Active Pins Factor - np
Number
14
16
18
20
22
24
28
36
40
48
50
64
2.6
3.1
3.4
3.7
4.0
4.3
4.6
5.3
6.7
7.4
‘IF
12
*UC
11
*UF
13
‘RW
25
9.5
13
N-1
~
=
exp
q
=
0.51064
N
=
Number
()
8.0
Alc
9.1
np
18
Nu
2.0
2.3
6
8
10
6.0
INS
7tp
of Active contacts
.50
SE
I
MF
14
ML
36
CL
650
q
of Active Contacts
An active contact is the conductive element
which mates with another element for the
purpose of transferring electrical energy.
15-6
-.
---
---
.-
.
MIL-HDBK-217F
16.1
INTERCONNECTION
ASSEMBLIES
WITH
PLATED
THROUGH
HOLES
DESCRIPTION
Circuit Boards, Printed (PCBS) and Discrete Wiring
Ap = Lb N1 xc
[
+ N2 (ZC
+ 13)]
~Q~E
Failures/106
Hours
APPLICATION
NOTE:
For assemblies
not using Plated Through Holes (PTH),
use Section 17,
Connections. A discrete wiring assembly with electrokms deposit plated through holes is basically a pattern of
insulated wires laid down on an adhesive coated substrate. The primary cause of failure for both printed wiri~
and discrete wiring assemblies is associated with plated through kle pr6blems (e.g., barrel cracki~).
Base Failure Rate - ~
Qud@ ~actor -
Technology
Printed Wiring Assembly/Printed
Circuit Boards with PTHs
i~bl
Quality
nQ
II
MIL-SPEC or Comparable Institute for
Interconnecting, and Packaging
Electronic Circuits (lPC) Standards
1
Lower
2
.000041
Discrete Wiring with Electroless
Deposited PTH (s 2 Levels of Circuitry)
fiQ
II
.00026
Number of PTHs Factor - N, ard N&
Environment Factor - nE
Factor
Quantit~
N,
Quantity of Wave Soldered Functional
PTHs
N2
Quantity of Hand Soldered PTHs
I
Complexity Factor - Zn
Number of Circuit Planes, P
52
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Discrete Wiring w/PTf-i
Xc = .65 P.m
I
I
Environment
GB
1.0
GF
2.0
GM
7.0
Ns
5.0
Nu
1.3
1.6
1.8
2.0
2.2
2.4
2.6
2.8
2.9
3.1
3.3
3.4
3.6
3.7
1
2sPs16
7CC
I
13
AC
5.0
‘IF
8.0
‘Uc
16
*UF
28
‘RW
19
SF
.50
MF
10
ML
27
c,
500
MIL-HDBK-217F
17.1
CONNECTIONS
DESCRIPTION
Connections Used on All Assemblies Except Those
Using Plated Through Holes (PTH)
APPLICATION
NOTE: The failure rate model in this section applies to connections used on all assemblies
except those using plated through holes. Use the Interconnection Assembly Model in Section 16 to account
for connections to a circuit board using plated through hole technology. The failure rate of the structure which
supports the connections and parts, e.g., non-plated-through hole boards and terminal straps, is considered to
be zero. Solderless wrap connections are characterized by solid wire wrapped under tension around a post,
whereas hand soldering with wrapping does not depend on a tension induced connection.
The followiW
model is for a single co~nection.
-~
= ~ZQZE
Failures/l 06 Hours
Environment Factor - ZF
Base FaiJure Rate - L
u
!
Connection
Type
Hand Solder, w/o Wrapping
Hand Solder, w/Wrapping
Crimp
Weld
Solderless Wrap
Clip Termination
Reflow Solder
*
.00014
.00026
.00005
.0000035
.00012
.000069
~Q
1,0
Manual
●
Lower
411Types
1.0
GF
2.0
GM
7.0
N~
4.0
‘IF
Automated
Standard
GB
*IC
C;mments
Crimp Types
Upper
fiE
Nu
Quaiiiy Factor - XO
Quality Grade
Environment
Daily pull tests
recommended.
11
4.0
6.0
‘Uc
6.0
‘UF
8.0
%w
16
.50
sF
1.0
Only MIL-SPEC or
equivalent tools and
terminals, pull test at
beginning and end of each
shift, color coded tools and
terminations.
2.0
MIL-SPEC tools, pull test at
beginning of each shift.
20.0
Anything less than standard
criteria.
MF
—
9.0
ML
24
CL
420
1.0
~xcept Crimp
17-1
,,
MIL-HDBK-217F
18.1
SPECIFICATION
MIL-M-103O4
METERS,
PANEL
DESCRIPTION
Meter, Electrical Indicating, Panel Type, Ruggedized
‘P
= %nAzFnQzE
Failures/l
06 Hours
Base Failure Rate - ~
QuaI”@ Factor - ~
Type
Quality
All
.090
nQ
I
M IL-M-1 0304
1.0
Lower
3.4
Application Factor - ~A
Application
I
Environment Factor - XF
Direct Current
1.0
Alternating
1.7
Current
Function
Function
Factor - ~F
1
~F
1.0
Ammeter
Voltmeter
1.0
I
Other*
●
I
2.8
Meters whose basic meter movement
construction is an ammeter with associated
conversion elements.
Environment
~E
GB
1.0
GF
4.0
%!
25
Ns
12
Nu
35
Alc
28
‘IF
42
‘Uc
58
‘UF
73
‘RW
60
SF
1,1
MF
60
ML
NIA
CL
N/A
18-1
I
MIL-HDBK-217F
19.1
SPECIFICATION
MIL-C-3098
06 Hours
Base Failure Rate - ~
Environment
Factor - xc
L
Frequency, f(MHz)
I
Lk
u
.011
0.5
1.0
.013
.019
.022
.024
.026
.027
.028
.029
.030
.031
.032
.033
.033
.034
.035
.035
.036
.036
.037
.037
.037
.038
5.0
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
Ab =
CRYSTALS
DESCRIPTION
Crystal Units, Quartz
Lp = AbXQnE Failures/l
I
QUARTZ
Environment
~E
G~
1.0
GF
3.0
GM
10
NS
6.0
NU
16
Aic
12
‘iF
17
‘Uc
22
‘UF
28
%w
23
SF
.50
MF
13
ML
32
CL
500
.o13(f).23
Quality Factor - xfi
u
Quality
fiQ
MIL-SPEC
1.0
Lower
2.1
—__—_——_——__
—_____ —_—__
___
19-1
MIL-HDBK-217F
20.1
LAMPS
DESCRIPTION
Lamps, Incandescent, Aviation Sewice
Lamps, Incandescent, Miniature, Tungsten-Filament
SPECIFICATION
MIL-L-6363
W-L-1 11
kp = ~~u~A~E
Failures/l
06 Hours
NOTE: The data used to develop this model included randomly occurring catastrophic
APPLICATION
failures and failures due to tungsten filament wearout.
Environment Factor - m~
Base FaiUre Rate - ~
.
Rated Voltage, Vr (Votts)
Ab
.59
.75
1.8
2.2
4.5
5.4
7.9
5
6
12
14
24
28
37.5
I
Ab =
.074(vr)’
Util@ion
“29
Factor- nu
Utilization (Illuminate Hour#
Equipment Operate Hours)
Environment
%E
GB
1.0
GF
2.0
GM
3.0
NS
3.0
Nu
4.0
*IC
4.0
‘IF
4.0
‘Uc
5.0
‘UF
6.0
*RW
5.0
SF
.70
MF
4.0
0.10
ML
6.0
0.10 to 0.90
0.72
cL
> 0.90
1.0
< 0.10
27
Application Factor - ~A
Application
Alternating Current
1.0
Direct Current
3.3
20-1
.
a..
I
1
11
I
MIL-HDBK-217+
21.1
ELECTRONIC
FILTERS,
NON-TUNABLE
DESCRIPTION
Filters, Radio Frequency Interference
Fitters, High Pass, Low Pass, Band Pass, Band
Suppression, and Dual Functioning (Non-tunable)
SPECIFICATION
MlL-F-l 5733
MIL-F-18327
The most accurate way to estimate the failure rate for electronic fitters is to sum the failure rates tor the individual
compments which make up the filter (e.g., IC’s, diodes, resistors, etc.) using the appropriate models provided
in this Handbook. The Parts Stress models or the Parts Count method given in Appendix A can be used to
determine individual component failure rates. If insufficient information is available then the following defautt
model can be used.
Failures/l 06 Hours
~=%~xE
Base Failure Rate - ~
Environment Factor - ZE
—
Type
MlL-F-l
Ab
5733, Ceramic-Ferrite
.022
Construction (Styles FL 10-16, 22,
24, 30-32, 34, 35, 38, 41-43, 45,
47-50, 61-65, 70, 81-93, 95, 96)
MlL-F-l 5733,
Components,
Discrete LC
(Styles FL 37, 53, 74)
MlL-F-l 8327, Discrete LC
Components (Composltlon
.12
.12
Environment
~E
GB
1.0
GF
2.0
GM
6.0
NS
4.0
NU
9.0
*IC
7.0
‘IF
9.0
1)
M IL-F-18327, Discrete LC and
Cfystai Components
(Composition 2)
.27
‘Uc
11
*UF
13
‘RW
11
SF
.80
MF
Quality Factor - ~
I
Quality
1
MiL-SPEC
I
7.0
ML
15
CL
120
1.0
Lower
2.9
I
21-1
l\
I
I
—
----
MIL-HDBK-217F
22.1
FUSES
DESCRIPTION
Fuse, Caftridge Class H
Fuse, CaMdge, High Interrupting Capacity
Fuse, Current Limiter Type, Aircraft
Fuse, Instrument Type
Fuse, Instrument, Power and Telephone
(Nonindicating), Style FO1
SPECIFICATION
W-F-1726
W-F-1814
MIL-F-5372
ML-F-23419
MIL-F-15160
+)
“ %‘E‘ai1ure@106‘Wrs
APPLICATION
NOTE:
The reliability modeling of fuses presents a unique problem.
Unlike most other
components, there is very little correlation between the number of fuse replacements and actual fuse failures.
Generally when a fuse opens, or “blows, - something else in the circuit has created an overload condition and
the fuse is sknply functbning as designed. This model is based on life test data and represents fuse open and
shorting failure modes due primarily to mechanical fatigue and corrosion. A short faiture mode is most cornmonty
caused by electrically conductive material shorting the fuse terminals together causing a failure to open
condition when rated current is exceeded.
Base Failure Rate - &
Environment
Type
W-F-1726, W-F-1814, MIL-F5372, MIL-F-23419,
ML-F-151 60
Environment
.010
%
GF
Factor - TCF
~E
1.0
2.0
%
8.0
NS
5.0
Nu
AC
11
9.0
‘IF
12
‘Uc
15
*UF
*RW
18
16
.90
SF
MF
10
ML
21
CL
230
J
22-1
I
MIL-HDBK-217F
I
I
I
I
23.1
L
MISCELLANEOUS
PARTS
- Failure Rates for Miscellaneous Parts (Failure@ 106 Hours)
Failure Rate
Vibrators (M IL-V-95)
60-cycle
120-cycle
400-cycle
15
20
40
Lamps
Neon Lamps
0.20
Fiber Optic Cables (Single Fiber Types Only)
0.10
Single Fiber Optic Connectors*
Microwave Elements (Coaxial & Waveguide)
Attenuators (Fixed & Variable)
Fixed Elements (Directional Couplers, Fixed Stubs & Cavities)
Variable Elements (Tuned Stubs & Cavities)
Microwave Ferrite Devices
Isolators & Circulators (S100W)
Isolators & Circulators
Phase
0.1 (Per Fiber Km)
See Resistors,
Type RD
Negligible
0.10
0.10x z~
0.20 x ~E
(>100W)
O.10x?tE
Shifter (Latching)
Dummy Loads
< 1 Oow
0.010 x ~E
1Oow to < 1Ooow
0.030 x n~
> 1000W
0.10 x ZE
Terminations (Thin or Thick Film Loads Used in Stripline and Thin
Film Ckcults)
Caution: Excessive Mating-Demating
0.030 x fiE
Cycles May Seriously Degrade Reliability
23-1
I
MIL-HDBK-217F
23.1
MISCELLANEOUS
—
PARTS
Environment Factor - X-
k
,..
.V.
V..-
-v
.
W.O,
.V
(Durnmy
-w..-””
Environment
~E
Load
I
Environment
GB
1.0
GB
1.0
GF
2.0
GF
2.0
GM
8.0
GM
NS
5.0
N~
Nu
N“
12
10
5.0
17
*IC
5.0
AC
6.0
‘IF
8.0
‘IF
8.0
‘Uc
7.0
*UC
14
11
‘UF
22
17
*RW
25
‘UF
‘RW
SF
MF
.50
9.0
ML
24
CL
450
.50
SF
I
{
MF
14
ML
36
c,
23-2
a
660
MIL-tiDBK-217F
APPENDIX
A:
PARTS
COUNT
RELIABILITY
PREDICTtON
Parts Ccxmt Rellablllty Prediction - This prediction method is applicable during bid proposal
and early design phases when insuff-kient information is avaitable to use the part stress analysis models
shown in the rndn body of this Handbook. The information needed to apptythe method is (1) generk pal
ws
(includlng complexity for mkrodrcults) and quantities, (2) part quallty levels, and (3) equipment
environment. The equipment failure rate Is obtained by looking up a generic failure rate in one of the
following tables, muttiptying it by a qualityfactor,and then summing it with failure rates obtained for other
components in the equipment. The general mathematkal expressbn for equipment failure rate with this
method is:
Equation 1
for a given equipment environment where:
‘EQUIP
-
Total equipment failure rate (Failure@l 06 Hours)
‘9
=
Generic failure rate for the i ‘h generk part (Failures/106
7LQ
=
Quality factor for the i ‘h generic part
Ni
=
Quantityof i ‘h generk part
n
=
Number of different generk
Hours)
part categories in the equipment
Equation 1 applies if the entire equipment is being used in one environment.
If the equipment
comprises several units operating in different environments (such as avionics systems with units in
airborne inhabited (Al) and uninhabited (Au) environments), then Equation 1 should be applied to the
portions of the equipment In each environment. These “environment-equipment” failure rates should be
added to determine total equipment failure rate. Environmental symbols are defined in SeCtion 3.
The quality factors to be used with each part type are shown with the appkabk
~
tables and are not
necessarily the same values that are used in the Parl Stress Anatysis. Microcircuits have an additional
multiplying factor, ~L, which accounts for the maturfty of the manufacturing process.
For devices in
production two years or more, no rrmdiiition
should be ndtiplied
is needed.
For those kI production less than two years, ~
by the appropriate XL factor (see page A-4).
ft should be noted that no generic failure rates are shown for hybrid mkrocimdts.
Each hybdd is a fakfy
unique devke.
Since none of these devkes have been standardized, their complexity cannot be
determined from their name or function. Identically or similarly named hybrids can have a wide range of
complexity that thwarts categorization for pufposes of this prediction method. tf hybrids are anticipated for
a design, their use and construction should be thoroughly investigated on an individual basis with
application of the predktbn model in Section 5.
The failure rates shown In this Appendix wem calculated by assigning model defautt values to the
failure rate modets of Section !5through 23. The speclfk defaultvaJues used for the model parameters are
shown with the ~ Tabtes for mkrocimults. Default parameters for atiother part cfasses are summarized in
the tables startifi on Page A-12. For parts with characterfstks which differ significantly from the assumed
defaults, or parls used in large quantities, the underlying models in the main body of this Handbook can
be used.
A-1
I
-=——--.—-=-———a——-.
MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
-*O*
. .
..mi@j
I
Wml
cum.
00.
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ml-m
snNc9tn
c9w*a
0000
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000
:f%m
o-mm
0000
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.
Cuu:
.
.
.
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l–
L
●
*:I
A-2
—-——–—=
—.
–—–——–———-
————–
——–-=
==
=.
—
.
.
MIL-HDBK-217F
APPENDIX
A:
PARTS
U3
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0
0
o
.
o
liniimil~l
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MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
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+
1
ii
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●
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—
0
.-
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MIL-HDBK-217F
APPENDIX
A:
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COUNT
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in
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MIL-HDBK-217F
APPENDIX
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A-6
A:
PARTS
COUNT
MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
A-7
I
MIL-I+DBK-217F
APPENDIX
A:
PARTS
.
COUNT
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0
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a
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10
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MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
A-9
MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
m
.
.
N
c+
U3
w
m
to
N
N
Q
h“
m
F2
A-10
MIL-HDBK-217F
APPENDIX
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0
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A:
PARTS
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MIL-HDBK-217F
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COUNT
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MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
A-13
MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
A-14
I
I
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I
MIL-HDBK-217F
APPENDIX
? 0.00.0.000.00.
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A:
PARTS
COUNT
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A-15
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MIL-HDBK-217F
APPENDIX
.0
A:
PARTS
0
0
COUNT
0
0
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a5
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$+
8
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m
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m..
.
8
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A-16
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I
MIL-HDBK-217F
APPENDIX
A:
PARTS
COUNT
A-17
nn
I
AK
MIL-HDBK-217F
APPENDIX
/4-18
A:
PARTS
COUNT
MIL-HDBK-217F
APPENDIX
VHSJC/VHSIGLIKE
B:
AND
VLSI CMOS
(DETAILED
MODEL)
This appendix contains the detaibd versbn of the VHSICMSI CMOS model contained in Sectbn 5.3.
is provided to albw more detailed device level design trade-offs to be acxmmplkhed for predominate
failure modes and mechanisms exhibited in CMOS devices. Reference 30 should be consulted for a
detailed derivation of this model.
CN~
+ ~t)
+ ~(t)
RATUSWL
Lp(t)
~,(t)
+ ~~(t)
+ ~.~
+ ~~
Ip(t)
Pred.kted Failure Rate as a Function of Time
Aox(t)
Oxide Failure Rate
q-Jt)
Metallization Failure Rate
kc(t)
Hot Carner Failure Rate
~~~(t)
Contamination Failure Rate
k PAC
Package Failure Rate
% SD
EOS/ESD
q~(t)
Miscellaneous Failure Rate
+ ~~(t)
Failure Rate
The equations for each of the above failure mechanism failure rates are as follows:
-7.7 to) (+ox)
A %YPEO)(
Lox (in F/l 06) =
AR
~
*
OR )[
(.0788 e
5
.399
exp ~
+ (t+to)a~x
((
=Ox
A
=
Total Chip Area (in cr#)
‘TYPEOX
=
.~
(e -7.7 AToxt
)
2
In (t + to) - In t500x
)
)1
for Custom and Logic Devices, 1.23 for Memories and Gate Anays
It
MIL-HDBK-217F
APPENDIX
VHSIC-VHSIC-LIKE
B:
AND
VLSI
(DETAILED
CMOS
AR
.21 cm2
Doox
Oxide Defect Density (tf unknown, use
%
—
()%
MODEL)
2
where X. = 2 w
and X~ is the feature
size of the device)
DR
1 Def ect/cm2
Effective Screening Time
to
(Actual Time of Test (in 106 hrs.))
‘Tox
Temperature
●
(ATOX (at Junction s~eenjm
Acceleration Factor, =
exp
‘3
- (+
[ 8.6 I7x1O 5
tern.)
(in ~))”
- *)]
(where TJ = Tc + 9JCP (in “K))
%(-JX
Eox
e
-192
(~
Maimm
1
- *)
power
&Jppiy
Votbge VDD, divided by the gate oxide thickness
(in
MV/cm)
1.3x1022
t500x
(QML)
~ox
(QML)
ATOX ‘Vex
(in 106 hrs.)
= 2 if on CNL, .5 if not.
Sgma obtained fmm test data of oxide faibres fmm the same or similar process. If
not avaiiable, use a Oox value of 1.
t
time (in 106 Hours)
B-2
—
4
MIL-HDBK-217F
APPENDIX
B:
VHSIC/VHSIGLIKE
AND
VLSI
CMOS
(DETAILED
MODEL)
F FQw
&
A %YPEMET
=
‘OMET
AR
[
~ 00102
‘R
~-1 “’8 ‘O)(A
,~E~‘(e-’.’8‘TME+
-
)
1
+[(,+;fl=e.P[~(
l.(t+to)-,.t50METfJ
‘R
=
Total Chip Area (in cm
=
.88 for Custom and Logic Devices, 1.12 for Memory and Gate Arrays
=
.21 cm2
5
Xo
‘OMET
=
Metal Defect Density (tf unknown use (—)
x~
2
where ~
= 2 pm and X~ is the feature size of
the device)
‘R
=
1 Defect/cm*
=
Temperature
=
exp
Acceleration Factor
[ 8.6;yj0-5
‘o
=
=A
t
50MET
=
(~
- A)]
Effective Screening Time
‘=
(QML)
●
(Metal
J2 A
=TCASE +,JcP
(inOK)~
(in 106 hrs.)
(at Screening Ternp (in ‘K))
.388
(TJ
Type)
●
(Actual Scmenhg
Tune (in 106 hrs))
(in 106 hrs.)
TME’
(QML) = 2 if on QML, .5 if not.
Metal Type = 1 for Al, 37.5 for AI-CU or for A1-Si-Cu
J
a
WT
u
The mean absoMe
=
slgrna otXained from test data on electmnigration
value of Metal Current Density (in 106 Amps/cm2)
process. If this data is not available use cm
t
=
failures from the same or a similar
= 1.
time (in 106 hrs.)
B-3
MIL-HDBK-217F
APPENDIX
B:
AND VLSI
VHSIGVHSIGUKE
-.5
‘50HC
=
(QML)3.74XI
‘THC
0-5
‘d
HC
(
(DETAILED
—
MODEL)
2
In (t + to) - In t50
2
%c
CMOS
)1
$u Q -2.5
Id
()
(QML) = 2 if on QML, .5 if not
.039
% tic = exp
[ 8.617x10-5
Id
Drain Current at Operating Temperature.
If unknown use id = 3.5 e ‘“00’57‘J
‘sub
Substrate Current at Operating Temperature.
‘in ‘K)
If unknown use
Isub = .0058 e ‘-OOWg ‘J (in ‘K) (mA)
%
sgma derived from test data, if not available use 1.
to
ATW (at wreening
t
time (in 106 hrs.)
Temp. (in ‘K))
●
(Test Duration in 106 hours)
ATIC)N F~~TlOf!l
--0028 to AT~N
%hl
.000022 e
-,0-
[+
-4$1
(where TJ = Tc + 8JCP (in ‘K))
exp
[ 8.617x1O
to
e -.0028 ATCON t
5
Effective Screening Time
ATmn (at screening junotion temperature (in ‘K))
t
B-4
time (in 106 hrs.)
●
(actual screening time in 106 hrs.)
(WV
MIL-t-iDBK-217F
APPENDIX
VHSIC/VHSIGLIKE
B:
%AC
=
(.0024 + l.=
x 10-5 (spins)) ~
fiE
=
See Section 5.10
7CQ
=
See Sectbn
~
AND
~T
VLSI
‘PH
Package Hermetidty Factor
%
O for Hermetic Packages
‘PH
-.5
399
exp
t~~”
[(~PH2
TA
10-6 exp
Pt+
ArWent
MODEL)
5.10
npT
1.0
2.2
4.7
DtP
Pin Grid May
Chip Carner (Surface MOUM T=hno~y)
86x
(DETAILED
+ ~~
Package Type
%0
CMOS
I
In(t) - In(tsop”))g for plastc packages
‘2
- (;
[ 8.617x1O 5
- *)]
2.96
exp ~
[1
Temp. (in “K)
(mL’230[+
-+1+
(l-DC)(RIi) whereTJ= Tc + eKp On“K)
(for example, for 50% Relative Humidity, use RH = .50)
.74
time (in 106 hrs.)
B-5
MIL-HDBK-217F
APPENDIX
B:
VHSIGVHSIGLIKE
-.0002
%0s
=
“““
AND
VLSI
CMOS
(DETAILED
MODEL)
VTH
- “OOo:;&-
VTH = ESD Threshold of the device using a 100 pF, 1500 ohm discharge model
‘MIS
=
(.01 e
‘TMIS
=
‘2.2 ~) ~ATMl~ ) (e -2.2 ATMIS t,
= Temperature Acceleration Factor
exp
-.423
[ 8.6317x10-5
(+
- A)]
where TJ = Tc + eJcP (in ‘K)
to =
=
t=
Effective Screening Time
ATMl~ (at Screening Terrp
(in “K))
●
Actual Screening Time (in 106 hours)
time (in 106 hrs.)
B-6
I
7
-an
1
AC
MIL-HDBK-217F
APPENDIX
Publications tisted with “AD” nunbers
National Technical hlfOtiiOfl
5285 Port Royal Road
C:
BIBLIOGRAPHY
may be obtained trom:
Service
~@eM,
VA 22151
(703) 487-4650
U.S. Defense Contractors may obtain copies from:
Defense Technical Information Center
Cameron Station - FDA, Bldg. 5
Alexandria, VA 22304-6145
(703) 274-7633
Documents with AD number prefix with the letter “B” or with the suffix “L”: These documents are in a
“Limfted Distributbn” category. Contact the Defense Technical Information Center for_
procedures.
Copies of MIL-STDS’S, MIL-HDBK’s, and specifications are available from:
Standardization Document Order Desk
700 Robins Ave.
Buikfing 4, Section D
Philadelphia, PA 19111-5094
(215) 697-2667
The year of publiition of the Rome Laboratory (RL) (formerly Rome Air Development Center (RADC))
documents is part of the RADC (or FL) nunber, e.g., RADGTR-66-97
was published in 1968.
1.
“Laser Reliability Prediction,” RADC-TR-75-21
2.
“ReliabiMy Model for Miniature Blower Motors Per MIL-B-23071 B,” RADC-TR-75-178,
3.
‘High Power Microwave Tube Reliability Study,” FAA-RD-76-I
4.
“Electric Motor Reliabii~
5.
“Development
Model,” RADC-TR-77406,
AD A013735.
72, AD AO033612.
AD A0501 79.
of Nonelectronic Part Cyclic Failure Rates,”RADC-TR-77417,
This study devebped
6.
O, AD A016437.
AD A050678.
new faiture rate models for relays, switches, and connectors.
“Passive Device Failure Rate Models for MIL-HDBK-217B,”
RADC-TR-~432,
AD A050180.
This study developed new failure rate models for resistors, capacitors and inductive devices.
7.
“Quantification of Printed Circuit Boatd Connector ReWMtty,”
8.
“Crimp Connection Reliability,” RADC-TR-78-15,
9.
“LS1/Micmprocessor
10.
“A Re@nda~
11,
“Revision of Environmental Faofors for MIL-HDBK-217B,”
Reliabilii
RADC-TR-77-433,
AD A050505.
Prediction Model Development,”
Notebook,” RADC-TR-77-287,
AD A049980.
RADC-TR-79-97,
AD A06891 1.
AD A050837.
RADC-TR-80-299,
AD A091837.
L-1
.—
MIL-HDBK-217F
APPENDIX
C:
BIBLIOGRAPHY
12.
Traveling
Wave Tube Failure Rates,- RADC-TR-80-288,
13.
“Reliability Predict&n Modeling of blew Devices, - RADC-TR~237,
This study devebped
mernortes.
AD A096055.
AD A090029.
failure rate nmdek for magnetic bubble memories and charge~upkf
14.
“Failure Rates for Fiber Optic Assemblies,” RADC-TR-80-322,
15.
“Printed Wiring Assembly and Interconnection
AD A092315.
ReliabMfy,” RADC-TR-81 -318, AD Al 11214.
This study dwebped faihn fate modets for printed wtrfng asae~s,
solderless wrap
assanbfies, wrapped and soldered assemblies and discrete wirfng assemblies with
ebctroless depostted plated through holes.
16.
“Avionio Etimentat
F_
for MIL-HOBK-21 7,” RADC-TR-81 -374, AD B084430L.
17.
“RADC Thermal Guide for Reliability Engineers,” RADC-TR-82-1
18.
“Reliability Modeling of Critical Electronic Devices,” RADC-TR-83-1
72, AD Al 18839.
08, AD Al 35705.
This report devebped failure rate prediction procedures for magnetrons, vidicions, cathode
ray tubes, semiconductor lasers, helium-cadtim
lasers, heiiim-neon lasers, Nd: YAG lasers,
electronic filters, sofid state relays, time delay relays (electronic hybrid), circuit breakers, I.C.
Sockets, thumbwheel switches, electromagnetic meters, fuses, crystals, incandescent lamps,
neon gbw lamps and surface acoustic wave devices.
19.
This study developed failure rate models for nonoperating periods.
20.
“RADC Nonelectronic Reliability Notebook,” RADC-TR-85-194,
AD A163900.
This report contains failure rate data on rnechanicaf and electromechanical parts.
21.
“Reliabilii
Prediction for Spacecraft,” RADC-TR-85-229,
AD A149551.
TMs study kwestigated the reliability performance h@ories of 300 Satellite vehicles and is the
basis for the halving of all model %E factors forMIL-HDBK-217E
to MIL-HDKB-21 7E, Notice 1.
22.
“Surface Mount Technology: A Reliability Review; 1986, Available from Reliabilii
PO BOX 4700, Rome, NY 13440-8200,
800-526-4802.
23.
‘Thermal Resktames
AD B1084I7.
24.
“Large Scale Memory Emr
of Joint Army Navy (JAN) Certified Microcimuif Pa&ages,”
Detection and Correction? RADC-TR-87-92,
Anatysis Center,
RADC-TR46-97,
AD B1 17785L.
study developed
models
to cakwlate memory system reliiility for memories
incorporating error detecting and correcting codes. For a summary of the study see 1989
IEEE ReliabiMy and Maintainability SymposUm Proceedings, page 197, “Accounting for Soft
Errors in Memory Reliability Prediiion.a
This
25.
c-2
“Reliability Analysis of a Surface Mounted Package Using Finite Element Simulation,” RADC-TR-87177, AD A189488.
MIL-HDBK-217F
APPENDIX
26.
“VHSIC Impact on System Reliability,” RADC-TR-86-13,
27.
“Reliability Assessment of Surface Mount Technology,” RADC-TR-68-72,
28.
“Reliability Prediction Models for Discrete Semiconductor
C:
BIBLIOGRAPHY
AD B122629.
AD A193759.
Devices, - RADC-TR-88-97,
AD A200529.
This study developed new failure rate prediction modets for GaAs Power FETS, Transient
Suppressor Diodes, Infrared LEDs, Diode Array Displays and Current Regulator D-.
29.
“Inqxmt of Fiber Optics on System Reliability and Maintainabilii,”
30.
“VHSWVHSIC
RADC-TR-88-124,
Like Rel&bi14y Prediotlon Modeling,” RADGTR-69-I
AD A2CH946.
71, AD A214601.
This study provides the basis for the VHSIC model appearing in MIL-HDBK-21 7F, Section 5.
31.
“Reliability Assessment Using Finite Element Techniies,m
RADC-TR-89-281,
AD A21 6907.
This study addresses surface mounted solder interconnections and miorowire board’s platedthru-hole (PTH) connections. The report gives a detailed account of the factors to be
considered when performing an FEA and the procedure used to transfer the results to a
reliability figure-of-merit.
32.
“Reliability Analysis/Assessment
of Advanced Technologies,”
This study provides the basis for the revisedmicmchwit
Memories) appearing in MIL-HDBK-217F,
Sectii
5.
RADC-TR-90-72,
ADA 223647,
models (except VHSIC and Bubble
33.
“Improved Reliability Prediction Model for Field-Access Magnetic Bubble Devices,” AFWAL-TR-811052,
34.
“Reliability/Desgn
35.
“NASA Parts Application Handbook,” MIL-HDBK-976-B
(NASA).
This handmok is a five vohnne series which dfscusses a full range of eiectrfcal, electronic and
electromechanical component parts. It provides extensive detailed technical informatbn for
each component part such as: definitions, oonstructbn details, operating characteristics,
derating, failure mechanisms, screening techniques, standard parts, environmental
considerations, and circuit appliition.
36.
‘Nonelectronic Parts Reliability Data 1991 ,“ NPRD-91.
TM report contains field ?aiture rate data on a variety of ektrical, mechanical,
electromechanical and microwave parts and assernblii (1 400 different part types). It is
available from the Re@bMty AnaJysis Center, PO Box 4700, Rome, NY 13440-6200, Phone:
(315) 337-0900.
Thermal Applications,” MIL-HDBK-251.
Custodians:
Amy-CR
Navy - EC
Air Fome -17
Preparing Activity:
Air Force -17
Project No. RELI-0064
c-3
.
——
---- . .. .
I
MIL-HDBK-217F
APPENDIX
C:
BIBLIOGRAPHY
Review AcWtWs:
Army - Ml, AV, ER
Navy - Sl+, AS, OS
~rForce -11, 13, 14, 15, 18,
19,99
User Activities:
Army - AT, ME, GL
Navy - CG, MC, YD, TD
Alr Force -85
I
c-4
.
ImE:Thistcumm
aynott
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Qmult cmamsnd mnuactd
Camnoms sdlmbdanmsbfmtinat
doaunsm,
norbrupostwdvus, ddatkm, udwikatkmofspedk=bn~sm
Oons$mw
orhplyuthofizdcm mwdvearly
podtJnd
thodsr9ncdcka8na
w8)wb
nquhm9nts.
(Fo#dahg
lt?ishe)
(FM abng this line)
DEPARTMENT
OF THE AIR ~E
RUERSS
GrWfissAFB, NY 13441-5700
NO
111111
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MAIL
POSTAGE
\
OFFKXAL BUSINESS
FOR PRtVATE USE S300
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IF MAILED
IN THE
UNITED STATES
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FRSTCtASS
=LY
W-
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STANDARDIZATION
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