Electronic Circuits: Syllabus • Instructor: Dr. Tamer ElBatt • Teaching Assistant: Eng. Ahmed Gad • Textbook: - A. Sedra and K. Smith, “Microelectronic Circuits, 5th Ed.,” Oxford University Press, 2004. - J. Millman and A. Grabl, “Microelectronics, 2nd Ed.,” Mc-Graw Hill, 1987 • Contents: - Revision: Circuits (R, L, C) + Diodes - Introduction to Transistors - MOSFET Device Structure and Physical Operation - MOSFET Current-Voltage Characteristics - MOSFET Circuits at DC - The MOSFET as an Amplifier and as a Switch - Biasing in MOS Amplifier Circuits - Small-Signal Operation and Models - Single-Stage Amplifiers Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 1 Diodes: Two-terminal Devices Dr. Tamer ElBatt 2 3.1 The Ideal Diode • A diode is a passive 2-terminal device; hence it provides no gain • Applications: Switch, Clamping circuit, Rectifier Figure 3.1 The ideal diode: (a) diode circuit symbol; (b) i–v characteristic; (c) equivalent circuit in the reverse direction; (d) equivalent circuit in the forward direction. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 3 Forward and Reverse Bias Forward Bias Microelectronic Circuits - Fifth Edition Sedra/Smith Reverse Bias Dr. Tamer ElBatt 4 Application: Rectifier DC = ?? Figure 3.3 (a) Rectifier circuit. (b) Input waveform. (c) Equivalent circuit when vI ≥ 0. (d) Equivalent circuit when vI 0. (e) Output waveform. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 5 Exercise 1: Q1: Sketch the waveform of vD. Q2: Find the peak value of iD and the DC component of vo when peak vl = 10 V and R = 1 kΩ Figure E3.1 Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 6 Simple Application: Diode Logic Gates OR Gate Microelectronic Circuits - Fifth Edition Sedra/Smith A+D Gate Dr. Tamer ElBatt 7 3.2 The i-v Characteristic of a silicon junction diode Figure 3.7 The i–v characteristic of a silicon junction diode. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 8 The i-v Characteristic of a silicon junction diode cont. • Forward Bias: i = Is (ev/nVT -1) where Is: saturation current VT = kT/q (Thermal Voltage) n = 1 or 2 Figure 3.8 The diode i–v relationship with some scales expanded and others compressed in order to reveal details. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 9 Temperature Effect Figure 3.9 Illustrating the temperature dependence of the diode forward characteristic. At a constant current, the voltage drop decreases by approximately 2 mV for every 1°C increase in temperature. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 10 3.3 Modeling the Diode Forward Characteristics • Several models exist - The Exponential Model - The Piecewise-Linear Model - The Constant-Voltage-Drop Model • The Exponential Model - Graphical Analysis - Iterative Analysis Figure 3.10 A simple circuit used to illustrate the analysis of circuits in which the diode is forward conducting. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 11 Graphical Analysis Figure 3.11 Graphical analysis of the circuit in Fig. 3.10 using the exponential diode model. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 12 Iterative Analysis Example: VDD = 5v R = 1 KΩ Diode current = 1mA at voltage = 0.7 v and its voltage drops by 0.1 for every decade change in current Determine ID and VD Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 13 The Piece-wise Linear Model Figure 3.12 Approximating the diode forward characteristic with two straight lines: the piecewise-linear model. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 14 The Piece-wise Linear Model cont. Figure 3.13 Piecewise-linear model of the diode forward characteristic and its equivalent circuit representation. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 15 The Piece-wise Linear Model cont. Figure 3.14 The circuit of Fig. 3.10 with the diode replaced with its piecewise-linear model of Fig. 3.13. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 16 The Constant-Voltage-Drop Model Figure 3.15 Development of the constant-voltage-drop model of the diode forward characteristics. A vertical straight line (B) is used to approximate the fast-rising exponential. Observe that this simple model predicts VD to within ±0.1 V over the current range of 0.1 mA to 10 mA. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 17 The Constant-Voltage-Drop Model cont. Figure 3.16 The constant-voltage-drop model of the diode forward characteristics and its equivalent-circuit representation. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 18 3.3.8 The Small-Signal Model • It can be shown that for small AC signals, the diode is modeled as a resistor (rd), rd = nVT/ID Figure 3.17 Development of the diode small-signal model. Note that the numerical values shown are for a diode with n = 2. Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 19 3.4 The Breakdown Region — Zener Diode according to specs Important Application: voltage regulators Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 20 Zener Diode Model • rz (incremental resistance): given by the inverse of the slope of the almostLinear i-v curve at point Q. • rz ranges from few ohms to few tens of ohms • The lower the rz the more ideal the Zener diode becomes in the design of voltage regulators VZ = VZ0 + rz IZ Microelectronic Circuits - Fifth Edition Sedra/Smith Dr. Tamer ElBatt 21