ЦИТАТИ НА ПУБЛИКАЦИИТЕ
на доц. д-р ПЕТКО ВИТАНОВ
(съгласно Science Citation Index, ISI)
I. ЦИТАТИ НА НАУЧНИ ПУБЛИКАЦИИ В СПИИСАНИЯ И СБОРНИЦИ:
1. L.I.Popova, V.J.Shekerdjiisky,
V.B.Lazarova,
G.D.Beshkov, P.K.Vitanov,
“Preparation and Properties of Silicon Nitride Films Deposited from the SiCl4NH3 System”, BULG. J. PHYSICS, v.2, p.609, 1975 (2бр.)
1. C.E.Morosano, Microel, and Reliab, v.20, p.358, 1980
2. V.Michailov and R.Dulgerova, Bulgarian J.Phys., v.23, p.58, 1996
2.L.I.Popova,P.K.Vitanov,V.B.Lazarova,G.D.Beshkov,V.J.Shekerdjiisky,
“Properties of silicon nitride films deposited by the SiH4 -NH3 system, varying
the ratio of NH3 to SiH4 ”, COMPTES RENDUS de L’ ACAD. BULG. SCI.,
v.29, p.183, 1976 (3бр.)
3. C.E.Morosano, Microel, and Reliab, v.20, p.358, 1980
4. A. Agasava, Solid State technology R-20 (1977) 36.
5. A. Agasava, Phys. Letts. A, 59 (1977) 481.
3. P.K.Vitanov, L.Popova, B.Z.Antov, “ MNOS memory structures with relatively
thick oxide ”, ELECTRONICS LETTERS, v.12, p.681, 1976 (3бр.)
6. Экспрес Информация - Приборы и элементы вычислителной технике, №27, 1977
7. Камбалин и др., Микроэлектроника, т.8 №3, стр.248, 1979
8. S.A.Biryakov et.al., Physica Status Solidi /a/, v.60, p.39, 1980
4. L.I.Popova, P.K.Vitanov, B.Z.Antov, “ C-V and I-V characteristics of MIS
structures with pyrolitical SiO2 as dielectric ”, THIN SOLID FILMS, v.23, p.15,
1974 (6бр.)
9.
10.
11.
12.
13.
H.Splitgeber, J.Herbst, Siemens Forsch. Und Enwickel. Bericht, N6, p.371, 1977
A.H.Agajanian, Solid State Technologyq v.20, p.36, 1977
W.P.Brown, Thin Solid Films, v.59, p.15, 1979
A.L.Dawer, J.Applied Physics, v.53, p.5311, 1982
U. Rao, J.S.Kumar, K.N.Reddy, Progress in Crystal Growth and Characterization of
Materials, v. 15, pp. 187-314, 1987
14. Shekar M.C., Cryst. Res., T19 (1984) 1649
1
5. L.I.Popova, B.Z.Antov, P.K.Vitanov, “ Investigation of surface traps at the
silicon-silicon monooxide interface by the C-V method” , SOLID STATE
ELECTRONICS, v.18, p.1141, 1975 (1бр.)
15. Horvath, Zl., Dozsa. L., Krafcsik, O., Mohacsy, T., Vida, G., Applied Surface Science,
234, pp. 67-71, 2004
6. L.I.Popova, B.Z.Antov, P.K.Vitanov, “ Effect of surface traps on the C-V
characteristics of MIS structures with SiO2
as dielectric ”, BULG.J.
PHYSICS,v.2, p.465, 1975 (1бр.)
16. Horvath, Zl., Dozsa. L., Krafcsik, O., Mohacsy, T., Vida, G., Applied Surface Science,
234, pp. 67-71, 2004
7. L.I.Popova, B.Z.Antov, P.K.Vitanov, “ The conduction process in pyrolitically
deposited SiO2 films ”, THIN SOLID FILMS, v.38, p.247, 1976 (5бр.)
17. M.Meandre et.al., Thin Solid Films, v.61, p.83, 1979
18. M.Meandre et.al., J.Non-Cristaline Solids, v.46, p.71, 1981
19. B.Babyji et al, Physica Staatus Solidi (a), v.60, p.K39, 1980
20. B.Brazis et.al., Physica Status Solidi (a), v.83, K69, 1984
21. U. Rao, J.S.Kumar, K.N.Reddy, Progress in Crystal Growth and Characterization of
Materials, v. 15, pp. 187-314, 1987.
8. L.I.Popova, B.Z.Antov, P.K.Vitanov, “High field conduction processes in silicon
nitride films in the presence of charge trapping “, THIN SOLID FILMS, v.36,
p.157, 1976 (6бр.)
22. C.E.Morosanu, Thin Solid Films, v.65, p.171, 1980
23. K.Watanabene et.al., J.Appl.Phys., v.53, p.568, 1982
24. S.A.Awan, R.D.Gould, Acta Physica Slovaca, 53, p. 347, 2003
25. R.D.Gould, S.A.Awan, Thin Solid Films, 398, p. 454, 2001
26. S.A.Awan, R.D.Gould, S.Gravano, Thin Solid Films, 356, p. 456, 1999
27. A.Buchanan, R.A.Abrem, M.J.Morant, Solid St. Electr., 30, p. 1295, 1987
9. L.I.Popova, P.K.Vitanov, .Z.Antov, “Interface states in MNOS structures”,
THIN SOLID FILMS, v.51, p.305, 1978 (3бр.)
28. Singh, Simmons, Solid State Electronics, v.25, p.219, 1982
29. D.G.Duft et.al., Bell Systems Technical Journal, v.58, p.2025, 1979
30. A.M.Dealmeida, S.S.Li, Solid State Electronics, 29, p.619, 1986
10. L.I.Popova,
P.K.Vitanov, B.Z.Antov, “ Discharge of MNOS strucrures”,
Solid-State and El. Devices, v.3, p.17, 1979 (2бр.)
31. P.Balk, Invated Paper VIII Vac. Congress, Cannes, p.525, 1980
32. S. Miller, J. Appl. Phys., 67, p. 7115, 1990
2
11. L.I.Popova, B.Z.Antov,
P.K.Vitanov, “ Electrical conduction of silicon
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33. M.D.Aggarval, J.Electr.Materials, v.11, p.491, 1982
34. S.Yokogama, N.Kajihara, M.Hirose, J.Appl.Phys., v.51, p.5470, 1980
35. S.Yokogama, M.Hirose, Y.Osaka, Jap. J. Appl.Phys., v.20, p.L35, 1981
36. H. Matsuura, M. Yoshimoto, H. Matsunami, Jap. J. of Appl. Phys., v. 34, p. L371, 1995
37. M.D.Aggarwal, S.Ashok, S.J.Fonash, J. of Electr. Matererials, 11, p. 491, 1982
12. L.I.Popova, P.K.Vitanov, B.Z.Antov, “ Microstructure and properties of CVD
Si3N4 layers ”, J.NON-CRYST.SOL., v.31, p.429, 1979 (1бр.)
38. BAE YW, DU H, GALLOIS B, et al. , Chemistry of Materials 4 (2): 478-483 MARAPR 1992
13. P.K.Vitanov, M.Kamenova, M.S.Sotirova, “The influence of the outer surface
conditions of MIS capacitors on the shape of their C-V curves ”, THIN SOLID
FILMS, v.70, p.L5, 1980 (1бр.)
39. Cohen, Thin Solid Films, v.109, p.329, 1983
14. P.Vitanov, U.Schwabe, I.Eisele, “Electrical characterization of feature sizes
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H.Iwai, J.Oristain, J.Walner, R.Dutton, IEEE Transaction on Electron Devices, ED32, p.344, 1985
J.Paulos, D.Antoniadis, IEEE Transaction on Electron Devices, ED-32, p.357, 1985
H.Rehme, H.Oppolzer, Siemens Forsch. Und Enwickel. Bericht, N4, p.193, 1985
H.Oppolzer, Proc. Microscopy of Semiconductor Materials Conf. Oxford 25-27
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R.S.Petrova, R.S.Kamburova, I.S.Nachev, Microelectronics Journal, v.16, N6, p.31,
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C.T.Yao, I.Mack, H.Liu, IEEE Electron Device Letters, v.7, N4, 1986
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4
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72. R.Lorival, P.Nouet, Proc. IEEE 1995 Conference on Microelectronic Test Structure,
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75. Z.Latif, A.Oritz-Conde, J.J.Liou and Garcia Sanches, IEEE Trans.Elect.Devices, v.
44(2), p.340, 1997
76. Z.Latif, A. Oritz-Conde, J. J. Liou and Garcia Sanches, Proc.21sth Int.Conference of
Microelectronics, MIEL’97, Nish, Yugoslavia, 14-17 Sept. 1997, p.281
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79. E.Simoen, C.Cloeys, J.A.Martino, Journal de Physique IV, v.6, NC3, p.29, 1996
80. G.I.Wirth, Ph.D. Thesis, 1999, Uni –Dortmund, dspase.hrz.uni-dortmund.de
22. P. Vitanov, M. Kamenova, St. Kanev, N. Tjutjungzhiev, D. Malinovska, “A
comparison between the performance of silicon solar cells with porous silicon
emitter and conventional cells”, PROC. WORLD RENEWABLE ENERGY
CONGRESS, vol. 5, Part III, p. 1787, 1994 (1бр.)
5
81. Yerokhov, I. Melnyk, Renewable and Sustainable Energy Review, v. 3-4, p. 219, 1999
23. P. Vitanov, M. Kamenova, N. Tjutjundzhiev, M. Delibasheva, E. Goranova, M.
Peneva, “Application of porous silicon on the monocrystalline silicon solar cell
emitter”, Proc. International School on Physics of Materials for Solar Energy
Conversion, Portici, Italy, May 1997 (1бр.)
82. V. Yerokhov, I. Melnyk, Renewable and Sustainable Energy Review, v. 3-4, p. 219,
1999
24. P.Vitanov, N. Tjutjundzhiev, M. Kamenova, M. Delibasheva, “Some electrical
properties of metal/porous Si/crystalline Si structure”, International Symposium on
Si Heterostructures, Crete, Greece, Sept. 11-14, 1995 (poster) (2бр.)
83. V. Yerokhov, I. Melnyk, Renewable and Sustainable Energy Review, v. 3-4, p. 219,
1999
84. R.R Bilyalov, J. Poortmans, Proc.17th European Photovoltaic Sol. Energy Conference,
Munich, pp. 1666-1669, 2001
25. P. Vitanov, M. Kamenova, N. Tjutjundzhiev, M. Delibasheva, “High efficiency
solar cells using porous silicon layer”, THIN SOLID FILMS, v. 297, p. 299-303,
1997 (42бр.)
85. J. M. Buriak, M. J. Allen, J. Luminescence, v. 80, p. 29, 1998
86. B. Unal, S. C. Bayliss, D. T. Clarke, J. of Appl. Phys., v. 87, 7, p. 3547, 2000
87. P. Panek, M. Lipinski, H. Czternastek, Opto-electtron Review, v. 8, p. 57, 2000
88. Z. N. Adamian, A. P. Hakhoyan, V. M. Aroutiounian, R. S. Barseghian, K. Toutyan,
Solar Energy Materials and Solar Cells, v. 6, 4, p. 347, 2000
89. C.C Striemer, F. Shi, P.M Fauchet, S.P Duttagupta, IEEE - Photovoltaic Specialists
Conference, 2000.
90. P.Fauchet, Porous Silicon Thin Films Solar Cell, Final report, NREL, USA, May, 2003
91. A. F. Beloto, M. Ueda, E. Abramof, J. R. Senna, M. D. da Silva, C. Kuranaga, H.
Renther, Ferreira da Siva, I. Pepe, Surface and Coatings Technology, v. 156, p. 257,
2002
92. A. F. Beloto, M. D. Silva, J. R. Senna, C. Kuranaga, N. F. Leite, M. Ueda, Physica
Status Solidi B, 232, pp.111-115, 2002
93. K. Drabczyk, P. Panek, M. Lipinski, Solar Energy Materials and Solar Cells, v. 76, p.
545, 2003.
94. Hander, F.A.B., Moreno, J.D., Marcos, M.L., Velasco, J.G. Journal of New Materials
for Electrochemical Systems 6 (2), pp. 129-135, 2003
95. Beloto, A.F., Silva, M.D., Senna, J.R., Kuranaga, C., Leite, N.F., Ueda, M. Nuclear
Instruments and Method in Physics Research, Section B: Beam Interactions with
Materials and Atoms 206 (SUPP), pp. 677-681, 2003
96. Blynskiǐ, V.I., Malyshev, S.A. Journal of Optical Technology (A Translation of
Opticheskii Zhurnal) 70 (6), pp. 440-442 ,2003
97. Kennedy, S.R., Brett, M.J. Applied Optics 42 (22), pp. 4573-4579 15 , 2003
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98. Prevo, B.G., Hwang, Y., Velev, O.D. Chemistry of Materials 17 (14), pp. 36423651,2005
99. Fu, X.-Y., Wang, S.-M., Deng, D.-G., Yi, K., Shao, J.-D., Fan, Z.-X. Chinese Physics
Letters 22 (12), pp. 3173-3175 , 2005
100. Ben Rabha, M., Boujmil, M.F., Meddeb, N., Saadoun, M.,Bessai, B. Thin Solid Films,
511-512 pp. 108-111, 2006
101. Arenas, M., Hu, H., Antonio del Rio, J., Sanchez, Aaron, Nicho, M.E., Solar Energy
Materials and Solar Cells, 90 (15) pp. 2413-2420, 2006
102. Tuzun, O. , Oktik, S. , Altindal, S., Mammadov, T.S., Thin Solid Films , Volume 511512,
26 July 2006, Pages 258-264 , 2006
103. Tuzun, O., Altindal, S., Oktik, S. Materials Science and Engineering B: Solid-State
Materials for Advanced Technology 134, (2-3 SPEC. ISS, .), pp. 291-295, 2006
104. Arenas, M., Hu, H., Antonio del Rio, Nicho, M.E, Material Research Society
Symposium Proceeding, vol. 939. pp.25-30, 2006
105. Badawy, W.A., AIP Coference Proceedings, 888, pp 29-35, 2007
106. Guo, H., Yang, H., Zhang, Y., Betavoltaic microbatteries using porous silicon,
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Systems (MEMS) , art. no. 4433006, pp. 867-870, 2007.
107. Badawy, W.A., Effect of porous silicon layer on the performance of Si/oxide
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108. Liu, N., Chen, H.-Z., Wang, M, Heterojunctions based on perylene diimide embedded
into porous silicon, Thin Solid Films 516 (12) (2008) 4272-4276
109. Guo, H., Li, H., Lai, A., Blanchard, J., Nuclear microbatteries for micro and nano
devices, International Conference on Solid-State and Integrated Circuits Technology
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110. Rajabi, M., Dariani, R.S. , Current improvement of porous silicon photovoltaic devices
by using double layer porous silicon structure: Applicable in porous silicon solar cells,
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111 Ben Rabha, M., Bessaïs, B., Enhancement of photovoltaic properties of multicrystalline
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112. Gao JP, Li X, Li BY,, Han YC, Fabrication of polymer antireflective coatings by selfassembly of supramolecular block copolymer, Рolymer 51 (12) (2010) 2683-2689.
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115. „Fabrication of polymer antireflective coatings by self-assembly of supramolecular
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116. Thermal annealing dependence of some optical properties of plasma-modified porous
silicon, Benyahia, Be., Gabouze, N., Guerbous, L., Mahmoudi, B., Menari, H., 2010,
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118. Salman, K.A., Omar, K., Hassan, Z. "Improved performance of a crystalline silicon
solar cell based on ZnO/PS anti-reflection coating layers” 2011 Superlattices and
Microstructures 50 (5), pp. 517-528 (2011)
119. „Storage of luminescent nanoparticles in porous silicon: Toward a solid state "golden
fleece" Serdiuk, T., Skryshevsky, V.A., Ivanov, I.I., Lysenko, V. 2011 Materials Letters
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120.”Influence of PECVD SiOx and SiNx:H films on optical and passivation properties of
antireflective porous silicon coatings for silicon solar cells”, Remache, L., Mahdjoub,
A., Fourmond, E., Dupuis, J., Lemiti, M. 2011 Physica Status Solidi (C) Current
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121. „Effects of illumination on I-V, C-V and G/w-V characteristics of Au/n-CdTe Schottky
barrier diodes”, Kanbur, H., Altindal, Ş., Mammadov, T., Şafak, Y. 2011 Journal of
Optoelectronics and Advanced Materials 13 (6), pp. 713-718
122. „ Broadband antireflection of block copolymer/homopolymer blend films with gradient
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Chemistry 21 (15), pp. 5817-5826
123.” Porous silicon layer for optical sensing of organic vapor”, Kim, H.-J., Kim, Y.-Y.,
Lee, K.-W., Cheng, H., Dong Han, H. 2011 Physica B: Condensed Matter 406 (8), pp.
1536-1541, (2011)
124.” Design of porous silicon/PECVD SiOx antireflection coatings for silicon solar cells
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Science and Engineering B: Solid-State Materials for Advanced Technology 176 (1),
pp. 45-48
125. „Effect of silicon porosity on solar cell efficiency”, Salman, K.A., Hassan, Z., Omar,
K., 2012, International Journal of Electrochemical Science 7 (1) , pp. 376-386
126.” Effective conversion efficiency enhancement of solar cell using ZnO/PS antireflection
coating layers”, Salman, K.A., Omar, K., Hassan, Z., 2012, Solar Energy 86 (1) ,
pp. 541-547
26.P.Vitanov, M.Delibasheva, E.Goranova, M.Peneva, ""The Influence of Porous
Silicon Coating on Silicon Solar Cells with Different Emitter Thickness", SOLAR
ENERGY MATERIALS AND SOLAR CELLS, v.61, p.213, 2000 (16 бр.)
127. R.R Bilyalov, J. Poortmans, Proc. 17th European Photovoltaic Sol. Energy
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128. Aroutiounian, V.M., Martirosyan, Kh., Soukiassian, P. Journal of Physics D: Applied
Physics 37 (19), pp. L25-L28 (2004)
129. Aroutiounian, V.M., Martirosyam, K.S., Hovhannisyan, A.S., Soukiassian, P.G. ,
Proceedings of SPIE - The International Society for Optical Engineering 6327, art.
no.2007 63270T, 2006
130. Martirosyan, K.S., Aroutiounian, V.M., Soukiassian, P. , Journal De Physique. IV :
JP, 132 pp. 325-328, 2006
131. Ben Rabha, M., Boujmil, M.F., Meddeb, N., Saadoun, M., Bessa, B., Thin Solid
Films, 511-512 pp. 108-111, 2006
132. Badawy, W.A., Porous silicon modified photovoltaic junctions: An approach to highefficiency solar cells, AIP Conference Proceedings 888, pp. 29-35, 2007.
133. Badawy, W.A., „Effect of porous silicon layer on the performance of Si/oxide
photovoltaic and photoelectrochemical cells”, Journal of Alloys and Compounds 464
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8
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“Laser ablation of SiO2/SiNx and AlOx/ back side passivation stack for
advanced cell architectures”, 26th European Photovoltaic Solar Energy Conference ,
pp 2180-2183, ( 2011)
319. Laser ablation of AlOx and AlOx/SiNx backside passivation layers for advanced cell
architectures Jaffrennou, P., Moors, M., Uruena, A., Das, J., Duerinckx, F., Penaud,
J., Rothschild, A., (...), Szlufcik, J.
2011
Conference Record of the IEEE
Photovoltaic Specialists Conference , art. no. 6186138 , pp. 001074-001078
320..Y. Schiele, G. Hahn, B. Terheiden ‚ “Investigation of radiation damage to the Al2O3/Si
wafer interface during electron beam ewaporation by means of C-V lifetime
measurements”, 26th European Photovoltaic Solar Energy Conference , pp 1o681o72, ( 2011)
321. Investigation of passivation properties of thermal Al 2O 3 and SiN x stack layers
deposited on solar grade p-type CZ Si wafers,
Seo, J.-W., Oh, H., Kyung, D.-H.,
Hwang, M.-I., Lee, K., Lee, W.-J., Cho, E.-C., 2011 Conference Record of the
IEEE Photovoltaic Specialists Conference , art. no. 6186246 , pp. 001512-001514
322. Enhanced passivation for silicon solar cells by anodic aluminum oxide, Lu, P.H.D.,
Lu, Z., Wang, K., Lennon, A., Wenham, S, 2011 Conference Record of the IEEE
Photovoltaic Specialists Conference , art. no. 6186241 , pp. 001490-001494
323. Al 2O3 surface passivation: Electrical characterization using the Quantox tool,
Rothschild, A., Nishibe, S., Cui, J., Zhu, N., Debucquoy, M., Mamagkakis, S.,
Nagaswami, V., John, J.
2011
Conference Record of the IEEE Photovoltaic
Specialists Conference , art. no. 6186245 , pp. 001508-001511
324. J.Schmidt, A.Merkle, R. Bock, P. Altermatt, A, Cuevas, ” Progress in the Surface
passivation of silicin solar cells” 26th European Photovoltaic Solar Energy
Conference , pp 974-981, ( 2011)
325..A.Delabie, S.Sionke. J. Rip, S.Van Eishocht, G.Pourtois, M.Mueller, B.Beckhoff,
K.Pierlot, “Reaction mechanisms for atomic layer deposition of aluminum oxide on
semiconductor substrates” J. Vacuum Sci. and Techn. A: Vacuum, Surface and Films,
30, 91) art. No. 01A127 (2012)
326..J. Edwadson, P.G.Coleman, T.Li,A.Cuecas, S.Ruffell, “ Positron annihilation studies of
the AlOx SiO2 ?si interface in solar cell structures” J. Appl. Phys., 111, (5), art. no.
053515, 2012.
23
327.N. Satoh, I.Cesar, M. Lamers, I. Romijn, K. Bakker, S. Olson, f. Verbakel, M. Wiggers,
” Energy band diagram near the interface of aluminum oxide on p_Si fabricated by
atomic layer deposition without/with rapid thermal cycle annealing determined by
capacitance- voltage measurements” , J. Sci. and Nanotechnology, 10, pp.22-28,
2012.
328. B. Vermang, H. Goverde, A. Urena, A. Lorenz, E. Comaglioti, A. Rothschild, J. John,
R. Mertens, “ Blisterin in ALD Al2O3 passivation layers as rear contacting for local Al
BSF Si solar cells”, Solar Energy Materials and Solar Cells, 101, pp. 204-209, 2012
329. Effect of the temperature during deposition of AlO x films by spray pyrolysis on their
passivating properties in a silicon solar cell Untila, G.G., Kost, T.N., Chebotareva,
A.B., Zaks, M.B., Sitnikov, A.M., Solodukha, O.I. 2012 Semiconductors 46 (6) ,
pp. 832-837
330. Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al
2O 3 Black, L.E., McIntosh, K.R. 2012 , Applied Physics Letters 100 (20) , art.
no. 202107
331. „Advances in the surface passivation of silicon solar cells”, Schmidt, J., Werner, F.,
Veith, B., Zielke, D., Steingrube, S., Altermatt, P.P., Gatz, S., (...), Brendel, R. 2012
Energy Procedia 15 , pp. 30-39
332. Determination of the magnitude and centroid of the charge in a thin-film insulator by
CV and Kelvin probe measurements,
McIntosh, K.R., Black, L.E., Baker-Finch,
S.C., Kho, T.C., Wan, Y.Y. 2012, Energy Procedia 15 , pp. 162-170
333. „Low-temperature surface passivation of moderately doped crystalline silicon by
atomic-layer-deposited hafnium oxide films „, Lin, F., Hoex, B., Koh, Y.H., Lin, J.J.,
Aberle, A.G. 2012 Energy Procedia 15 , pp. 84-90
334. „Approach for Al 2O 3 rear surface passivation of industrial p-type Si PERC above
19%”, Vermang, B., Goverde, H., Tous, L., Lorenz, A., Choulat, P., Horzel, J., John,
J., (...), Mertens, R. 2012 Progress in Photovoltaics: Research and Applications
20 (3) , pp. 269-273
335. Surface passivation for Si solar cells: A combination of advanced surface cleaning
and thermal atomic layer deposition of Al 2O 3, Vermang, B., Rothschild, A., Kenis,
K., Wostyn, K., Bearda, T., Racz, A., Loozen, X., (...), Mertens, R. 2012 Diffusion
and Defect Data Pt.B: Solid State Phenomena 187 , pp. 357-361
336. „Interface recombination parameters of atomic-layer-deposited Al2O3 on crystalline
silicon „ Werner, F., Cosceev, A., Schmidt, J. , 2012 , Journal of Applied Physics
111 (7) , art. no. 073710
337. „Surface recombination of crystalline silicon substrates passivated by atomic-layerdeposited AlO x”, Arafune, K., Miki, S., Matsutani, R., Hamano, J., Yoshida, H.,
Tachibana, T., Ju Lee, H., (...), Satoh, S.-I. 2012 Japanese Journal of Applied
Physics 51 (4 PART 2) , art. no. 04DP06
48. P Vitanov, Z Alexieva, A Harizanova, Z Horvath, L Dozsa , “Electrical
properties of (Al2O3)x(TiO2)1-x films deposited on silicon substrate”,, Proc. of
Fifteenth International Summer School on Vacuum, Electron, And Ion
Technologies, 17–21 September 2007, Sozopol, Bulgaria, JOURNAL OF
PHYSICS: CONFERENCE SERIES 113 2008)012037 (1бр.)
338..“Evidence of Pool-Frenkel conduction mechanism in Sr-doped lanthanum ferrite La 1xSr xFeO 3(0≤x≤1) system “, Zafar, A., Imran, Z., Rafiq, M.A., Hasan, M.M. , Saudi
24
International Electronics, Communications and Photonics Conference 2011, SIECPC
2011 , art. no. 5876924, (2011).
49. Vitanov P., Tsanev A., Stefanov P., Harizanova A., Ivanova T., “XPS
characterization of thin ZrO2 and (ZrO2) x(Al2O3)1-x films deposited on
silicon”,) JOURNAL OF OPTOELECTRONICS AND ADVANCED
MATERIALS, 9 (2) , pp. 256-259 (2007). (1 бр.)
339. „Antireflection coatings for GaAs solar cell applications”Alexieva, Z.I., Nenova, Z.S.,
Bakardjieva, V.S., Milanova, M.M., Dikov, Hr.M.,Journal of Physics: Conference
Series 223 (1) , art. no. 012045, (2010).
50. P Vitanov, P Stefanov, A Harizanova and T Ivanova, “XPS characterization of
thin (Al2O3)x(TiO2)1-x films deposited on silicon”, 15TH INTERNATIONAL
SCHOOL ON VACUUM, ELECTRON AND ION TECHNOLOGIES, J.
PHYSICS: CONFERENCE SERIES 113 (2008) 012036. (5 бр.)
340. Qi, B., Agnarsson, B.,Göthelid, M., Ólafsson, S.,Gíslason, H.P., “High-resolution X-ray
photoemission spectroscopy study of AlN nano-columns grown by nitridation of Al
nano-squares on Si(111) substrates with ammonia”, Thin Solid Films 518 (14) (2010)
3632-3639.
341. Avi Shalav, Dinesh K.Venkatachalam, Fabian Reichardt, Frederic Fischer and Robert
G. Elliman, “Titania Coated Silica Nanowires”, Mater. Res. Soc. Symp. Proc. Vol.
1206 © 2010 Materials Research Society, 1206-M16-05
342.“Evidence of Pool-Frenkel conduction mechanism in Sr-doped lanthanum ferrite La1xSrxFeO3(0≤x≤1) system”, Zafar, A., Imran, Z., Rafiq, M.A., Hasan, M.M., (2011),
Saudi International Electronics, Communications and Photonics Conference
(2011), , SIECPC, art. no. 5876924
343. “Modification of the electronic structures of graphene by viologen “, Jeong,
H.K.,Kim, K.-J., Kim, S.M., Lee, Y.H. , Chemical Physics Letters 498 (1-3) , pp.
168-171, (2010).
344. “Depassivation of some metals by sliding friction “, Henry, P., Takadoum, J., Berçot, P.
, Corrosion Science 53 (1) , pp. 320-328 , (2011).
51. Vitanov P., Loozen X., Harizanova A., Ivanova T, Beaucarne G., A study of
sol-gel deposited Al2O3 films as passivating coatings for solar cells application,
PROCEEDINGS OF THE 23RD EUROPEAN PHOTOVOLTAIC SOLAR
ENERGY CONFERENCE, (2008), pp. 1596-1599. (1 бр.)
345. Ghannam, M.Y., Abouelsaood, A.A., Alomar, A.S., Poortmans, J.,”Analysis of thinfilm silicon solar cells with plasma textured front surface and multi-layer porous
silicon back reflector” , Solar Energy Materials and Solar Cells 94 (5) (2010) 850856.
25
52. Vitanov P, Harizanova A, Ivanova T, Т. Dimitrova, Chemical deposition of
Al2O3 thin films on Si substrates, THIN SOLID FILMS 517 (23) (2009) 63276330. (11 бр.)
346. Kaian Yao, Deqian Huang, Bolei Xu, Na Wang, Yingjie Wang and Shuping Bi,”A
sensitive electrochemical approach for monitoring the effects of nano-Al2O3 on LDH
activity by differential pulse voltammetry”, Analyst, 135 (1) (2010) 116-120
347. Limnonthakul P., Pokaipisit A., Limsuwan P., “Ultra-thin Al2O3 formation at room
temperature”, Advanced Materials Research 93-94 (2010) 113-116.
348. Alexieva, Z.I., Nenova, Z.S., Bakardjieva, V.S., Milanova, M.M., Dikov,
Hr.M..“Antireflection coatings for GaAs solar cell applications”, Alexieva, Z.I.,
Nenova, Z.S., Bakardjieva, V.S., Milanova, M.M., Dikov, Hr.M. Journal of Physics:
Conference Series 223 (1), art. no. 012045, (2010)
349. “ Multi-walled carbon nanotubes decrease lactate dehydrogenase activity in enzymatic
reaction “, Zhang, F., Wang, N., Kong, J., Dai, J., Chang, F., Feng, G., Bi, S., (2011),
Bioelectrochemistry ,82 (1), pp. 74-78
350. “Effects of post-deposition annealing temperature and time on physical properties of
metal-organic decomposed lanthanum cerium oxide thin film”, Lim, W.F., Cheong,
K.Y., Lockman, Z., (2011), Thin Solid Films , 519 (15), pp. 5139-5145 .
351. “Role of hydrogen in the surface passivation of crystalline silicon by sputtered
aluminum oxide”, Li, T.-T.A., Cuevas, A., (2011), Progress in Photovoltaics:
Research and Applications, 19 (3), pp. 320-325.
352. “Optical and passivating properties of sol-gel derived silica and titania coatings on
textured monocrystalline silicon”,
Petersson, A.M., Lindberg, P., Boström, T.,
Conference Record of the IEEE Photovoltaic Specialists Conference , art. no.
6186556 , pp. 002918-002923, ( 2011).
353. “ Influence of post-deposition annealing on metal-organic decomposed lanthanum
cerium oxide film “, Lim, W.F., Lockman, Z., Cheong, K.Y. , 2011 IEEE Regional
Symposium on Micro and Nanoelectronics, RSM 2011 - Programme and Abstracts ,
art. no. 6088283 , pp. 24-27 , (2011).
354. “Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si
“,Lim, W.F., Lockman, Z., Cheong, K.Y. , Applied Physics A: Materials Science
and Processing 107 (2) , pp. 459-467 , (2012).
355. “ Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al
2O3 “, Black, L.E., McIntosh, K.R. , Applied Physics Letters 100 (20) , art. no.
202107,( 2012).
356. “Preparation and characterisation of Ag incorporated Al 2O 3 nanocomposite films
obtained by sol-gel method “,
Ivanova, T., Harizanova, A., Koutzarova, T.,
Vertruyen, B. Crystal Research and Technology 47 (5) , pp. 579-584, (2012).
53. Vitanov, P., Goranova, E., Stavrov, V., Ivanov, P., Singh, P.K., Fabrication of
buried contact silicon solar cells using porous silicon, SOLAR ENERGY
MATERIALS AND SOLAR CELLS 93 (3), pp. 297-300, 2009. ( 6 бр.)
357.
Avi Shalav, Photovoltaics literature survey (No. 69), Progress in Photovoltaics:
Research and Applications, Volume 17 Issue 3, Pages 211 – 215,(2009).
358. P.N. Vinod,”Specific contact resistance and metallurgical process of the silverbased
paste for making ohmic contact structure on the porous silicon/p-Si surface of the
silicon solar cell, J Mater Sci: Mater Electron (2010) 21:730–736.
26
359.”Green nanotechnology of trends in future energy”, Guo, K.W. 2011 Recent Patents on
Nanotechnology 5 (2), pp. 76-88 ,2012.
360. “Fabrication and characterization of black polycrystalline silicon”, Liu, B.-W., Xia, Y.,
Liu, J., Li, C.-B. 2011 Beijing Keji Daxue Xuebao/Journal of University of Science
and Technology Beijing 33 (5), pp. 619-622 .
361. „Modification of porous silicon formation by varying the end of range of ion irradiation
Ow, Y.S., Liang, H.D., Azimi, S., Breese, M.B.H. (2011), Electrochemical and SolidState Letters 14 (5), pp. D45-D47.
362.” Specific contact resistance and metallurgical process of the silverbased paste for
making ohmic contact structure on the porous silicon/p-Si surface of the silicon solar
cell”, Vinod, P.N. (2010), Journal of Materials Science: Materials in Electronics 21
(7) , pp. 730-736
54. Z. Nenova, P.Vitanov, St. Kanev, “Temperature behavior of the spectral
response: a new approach for silicon solar cell characterization” JOURNAL OF
OPTOELECTRONICS AND ADVANCED MATERIALS, vol.11, (2009),
p.1487 ( 1 бр.)
363. Wiley InterScience:Progress in Photovoltaics: Research and Applications v.18 Issue
2, p 151-154, Literature Surveys, Photovoltaics literature survey (No. 76), School of
Photovoltaic and Renewable Energy Engineering, University of New South Wales,
Sydney, NSW 2052, Australia Santosh Shrestha, Published Online: Feb 23 2010
9:19AM, DOI: 10.1002/pip.970
55. P. Vitanov, A. Harizanova, T. Ivanova, Ch. Trapalis, N. Todorova, ”Sol –
Gel ZrO2 and ZrO2-Al2O3 Nanocrystalline Thin Films on Si as high –k
Dielectrics , MATERIALS SCIENCE AND ENGINEERING B: SOLIDSTATE MATERIALS FOR ADVANCED TECHNOLOGY, (2009),165 (3),
pp. 178-181. ISSN:0921-5107 ( 5 бр.)
364 . “ Effect of annealing temperatures on properties of sol-gel grown ZnO-ZrO 2 films”,
Ivanova, T., Harizanova, A., Koutzarova, T., Vertruyen, B., Crystal Research and
Technology 45 (11) , pp. 1154-1160, (2010).
365.” Deposition and post-deposition annealing of thin Y2O3 film on n-type Si in argon
ambient”, Quah, H.J., Cheong, K.Y.,(2011), Materials Chemistry and Physics, 130
(3), pp. 1007-1015.
366. “Effects of post-deposition annealing temperature and time on physical properties of
metal-organic decomposed lanthanum cerium oxide thin film”, Lim, W.F., Cheong,
K.Y., Lockman, Z., Thin Solid Films 519 (15), pp. 5139-5145, (2011).
367. “Phase transition and microstructural changes of sol-gel derived ZrO 2/Si films by
thermal annealing: Possible stability of tetragonal phase without transition to
monoclinic phase ‘, Hwang, S.M., Choi, J.H., Lee, S.M., Lim, J.H., Joo, J. , Journal
of Physical Chemistry C 116 (20) , pp. 11386-11392 , (2012).
368. “Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si”,
Lim, W.F., Lockman, Z., Cheong, K.Y. , Applied Physics A: Materials Science and
Processing 107 (2) , pp. 459-467 , (2012).
27
56. Milanova M., Kakanakov R., Koleva G., Arnaudov B., Evtimova S.,
Vitanov P., Goranova E., Alexieva Z. , “Incorporation of nitrogen in melt grown
GaAs,“ Journal of Optoelectronics and Advanced Materials, 11 (10), pp. 14711474, ISSN:14544164 (2009) ( 1бр.)
369. „Properties of GaAsN layers grown from melt containing Li3N as flux for enhancing
nitrogen dissolution Das, S.K., Das, T.D., Dhar, S. (2011), Semiconductor Science
and Technology 26 (8), art. no. 085028
57. M. Milanova, G. Koleva, R. Kakanakov, P. Vitanov, Z. Alexieva, E.
Goranova, B. Arnaudov, S. Evtimova, C. Barthou and B. Clerjaud J. PHYS.:
CONF. SER. 223 012016 ,ISSN: 1742-6596, (2010) ( 1бр.)
370. S. K. Das, T. D. Das and S. Dhar, Properties of GaAsN layers grown from melt
containing Li3N as flux for enhancing nitrogen dissolution, Semicond. Sci. Technol.
26 (2011) 085028 (5pp)
58. Vitanov P., Tyutyundzhiev N., Stefchev P., Karamfilov B.
Low cost multilayer metallization system for silicon solar cells
(1996) SOLAR ENERGY MATERIALS AND SOLAR CELLS, 44 (4) , pp.
471-484. (3бр.)
“ The investigation of plating technologies for front fingers of c-Si solar cells”,
Sun, S., Long, J., Zhang, B., ( 2012), Advanced Materials Research 512-515 , pp.
198-201 .
372. “A novel two step metallization of Ni/Cu for low concentrator c-Si solar cells”,
Chaudhari, V.A., Solanki, C.S., 2010, Solar Energy Materials and Solar Cells 94
(12) , pp. 2094-2101.
373 .”Electroplated metallization method for crystalline silicon solar cells,
Gao, J., Li,
M., Mao, D., (2010),Proceedings - 2010 11th International Conference on
Electronic Packaging Technology and High Density Packaging, ICEPT-HDP,
(2010),art. no. 5582336 , pp. 310-313
371.
II. ЦИТАТИ В ПАТЕНТИ
59. Agostinelli G; Szlufcik J; Vitanov P, Harizanova A. “Surface passivation of
semiconductor solar cell e.g. silicon solar cell involves spin-coating a binary
oxide system of aluminum oxide and metal/metalloid oxide that enhances
tetrahedral structure of aluminum oxide at the solar cell surface” PATENT
NUMBER(S): EP1489667-A2; US2005022863-A1; US76594752,(2005)Assignee:INTERUNIV MICRO-ELECTRONICA CENT VZW.
(4бр)
374. “Method for manufacturing silicon solar cell, involves preparing silicon substrate and
depositing dielectric layer on external surface of silicon substrate by sequential gas
phase deposition “Assignee: INST SOLARENERGIEFORSCHUNG GMBH ,
Inventor(s): SCHMIDT J , 2009-J17348, DE102007054384-A1; WO2009062882-A2.
28
375. “Photovoltaic material fabrication involves forming crystalline material having worm
hole structures overlying semiconductor substrate, and subjecting crystalline material
to hydrogen plasma species to occupy worm hole structures “, SILICON CHINA HK
LTD, SILICON CHINA LTD , Inventor(s): CHAN Y C, CHEUNG N W, CHAN C
2008-E61405, WO2008033859-A1; US2008105301-A1.
376. “Photovoltaic device e.g. solar cell, has intrinsic back surface passivated layer disposed
adjacent to lightly doped crystalline substrate, where passivated layer includes
amorphous or microcrystalline semiconductor material “,GENERAL ELECTRIC CO,
MANIVANNAN V, EBONG A U, et. al , Inventor(s): MANIVANNAN V, HUANG J
J, JOHNSON J N, et. al, 2007-103640, EP1722419-A1; US2006255340-A1;
JP2006319335-A;
377. Venkatesan Manivannan, Abasifreke Udo Ebong, Jiunn-Ru Jeffrey Huang, Thomas
Paul Feist, James Neil Johnson,” Surface passivated photovoltaic devices”, Patent N
US 7,375,378 B2, May 20, 2008.
60.
G Agostinelli, J Szlufcik, P Vitanov, A. Harizanova - US Patent US
7,659,475 B2, Feb.9, 2010, “Method for backside surface passivation of solar
cells and solar cells with such passivation”. (1 бр)
378. JJ Xu. “Methods of forming integrated circuits”, US Patent 7,939,353, (2011).
III. ЦИТАТИ В ДИСЕРТАЦИИ:
61. Vitanov P., Delibasheva M., Goranova E., Angelov Ch., Dimov V.,
Structure and morphological studies of thin porous silicon layers, (2000)
VACUUM, 58 (2), pp. 351-357 . (2 бр)
379. (2006) Polymerization in Confined Geometries PETRIE, RANDALL JAMES.
Polymerization in Confined Geometries. (Under the direction of Professors
Christopher B. Gorman and Jan Genzer) The work presented in this PhD thesis is
centered on nanometer-sized pores. Two detailed objectives include: 1) ...
[www.lib.ncsu.edu/.../etd-05022006-162454]
380. Polymerization in confined geometries Thesis (Ph.D.). (2005)North Carolina State
University. Includes vita. Includes bibliographical references.
[www.lib.ncsu.edu/.../etd.pdf]
29