Workshop on Simulation and Modeling of Emerging Electronics
SMEE 2013, Hong Kong University
Along for the Ride:
reflections on the
past, present, and future of
computational electronics
Mark Lundstrom
Purdue University
West Lafayette, Indiana USA
transistors à integrated circuits à modern society
?
Bell Labs 1947
Apple 2013
Lundstrom SMEE 2013
21st Century
electronics
2
outline
I.  A brief history of computational electronics
II.  Observations and lessons learned
III.  Nanotransistors
IV.  21 Century computational electronics?
Lundstrom SMEE 2013
3
transistors: a transformative technology?
1954
transistors
Sony TR-63
6-transistor
shirt pocket radio
1957
http://www.sony.net/Fun/SH/1-6/h2.html
http://people.msoe.edu/~reyer/regency/
4
1959: tubes vs. transistors
RCA Nuvistor
“Tube manufacturers have unveiled, in recent weeks,
drastically new concepts and techniques aimed to keep
them in the race with the transistor industry.”
-ELECTRONIC DESIGN, April 15, 1959, p. 3
5
Lundstrom SMEE 2013
SEEC notes
Semiconductor Electronics Education Committee
R.B. Adler, et al., 1960-1967
http://web.mit.edu/klund/www/books/seec.html
Lundstrom SMEE 2013
6
NMOS-II
NMOS I: 7 microns
NMOS II: 5 microns = 5000 nm
“shallow junctions” (2 µm)
100 nm gate oxide
Cu-Si-Al metal
VDD = 5V
6 MHz clock
7
Hewlett-Packard Journal, Nov. 1977
observations
Semiconductor technology has always:
Moved incredibly fast
Been highly multidisciplinary
Faced almost impossible challenges
Never been sure where it was heading
http://www.hp9825.com/index.html
Lundstrom SMEE 2013
8
Moore’s Law
100 nm barrier
1 micron barrier
L = 5000 nm
9
http://en.wikipedia.org/wiki/Moore's_law
Moore’s Law on a linear scale
transistors per cpu chip
10
Lundstrom SMEE 2013
9
computational electronics
What was the role of
computational electronics?
11
Lundstrom SMEE 2013
NMOS-II
NMOS I: 7 microns
NMOS II: 5 microns = 5000 nm
“shallow junctions” (2 µm)
100 nm gate oxide
Cu-Si-Al metal
VDD = 5V
6 MHz clock
12
Hewlett-Packard Journal, Nov. 1977
“the semiconductor equations”



D = κε 0E = −κε 0∇V

∇• D = ρ
∂n
= −∇ •
∂t
∂p
= −∇ •
∂t
(

J n −q + ( Gn − Rn )
)

(J
p
) (
q = G p − Rp
)
(
ρ = q p − n + N D+ − N A−



J n = nqµ nE + qDn∇n



J p = pqµ pE − qD p∇p
)
R = f (n, p)
etc.
13
Lundstrom SMEE 2013
the first models were “compact models”
“The Silicon Insulated-Gate Field-Effect Transistor”
S.R. Hofstein and F.P. Heiman, Proc. IEEE 1963.
(
W
2
µ nCox (VGS − VT ) VDS − VDS
2
L
2
W
ID =
µ nCox (VGS − VT )
2L
ID =
)
VDS ≤ VGS − VT
VDS > VGS − VT
“Characteristics of the Metal-Oxide-Semiconductor Transistor”
C.T. Sah, IEEE Trans. Electron Dev., 1964.
14
Lundstrom SMEE 2013
device scaling
“Design of Ion Implanted MOSFET’s with Very Small Physical Dimensions,”
R.H. Dennard, F.H. Gaensslen, H.-N. Yu, V.L. Rideout, E. Bassous, and
A.R. LeBlanc, IEEE J. Solid State Circuits, 9, 256-268, 2Oct. 1974.
1574 citations (M.S. Mock, 91 citations)
15
Lundstrom SMEE 2013
numerical device simulation
“A Self-consistent Iterative Scheme for One-Dimensional Steady-state
Transistor Calculations,” H.K. Gummel, IEEE Trans. Electron Dev., 11,
455-465, 1964.
“Large-signal Analysis of a Silicon Read Diode Oscillator,” D.L.
Scharfetter and Gummel, IEEE Trans. Electron Dev., 15, 64-77, 1968.
“Computer-Aided Two-Dimensional Analysis of Bipolar Transistors,”
J.W. Slotboom, IEEE Trans. Electron Dev., 20, 669-679, 1973.
“Two-Dimensional Mathematical Model of the IGFET,” M.S. Mock,
Solid-State Electron., 16, 601-609, 1973.
16
Lundstrom SMEE 2013
numerical device simulation
“MINIMOS – A Two-Dimensional MOS Analyzer,” S. Selberherr, A.
Schutz, and H.W. Potzl, IEEE J. Solid-State Circuits, 15, 605-615,
1980.
“Numerical Simulation of Heterostructure Semiconductor Devices,” R.
J. Schuelke ad M.S. Lundstrom, IEEE Trans. on Electron Dev., 30,
1151-1159, Sept. 1983.
“Numerical Methods for Semiconductor Device Simulation,” R.E.
Bank, D.J. Rose, and W. Fichtner, IEEE Trans. Electron Dev., 30,
1031-1041, 1984.
“PISCES II: Poisson and Continuity Equation Solver,” M.R. Pinto, C.S.
Rafferty, and R.W. Dutton, Stanford University Technical Report, 1984.
17
Lundstrom SMEE 2013
device scaling again
1/2
2
Lmin = A ⎡⎢ x j tox (WS + WD ) ⎤⎥
⎣
⎦
“Generalized guide for MOSFET miniaturization,” J.R. Brews, W. Fichtner,
E.H. Nicollian, and S.M. Sze, Electron Device Lett., 1, 2-4, 1980.
18
Dennard 1574 citations (279 citations)
Lundstrom SMEE 2013
energy transport / hydrodynamic
-
Te J S
Q
“A Critical Examination of the Assumptions Underlying Macroscopic
Transport Equations for Silicon Devices,” M.A. Stettler, M.A. Alam, and
M.S. Lundstrom, IEEE Trans. Electron Dev., 40, 733-740, 1993.
19
Lundstrom SMEE 2013
Monte Carlo simulation
“Velocity-field characteristics of GaAs with Γ-L-X Conduction Band
Ordering,” M.A. Littlejohn, J.R. Hauser, and T.H. Glisson, J. Appl.
Phys., 48, 4587-4590, 1977.
“Simulation of high-field transport in GaAs using a Monte Carlo
method and pseudopotential band structures,” H. Shichijo, K. Hess,
and G. E. Stillman, Appl. Phys. Lett., 38, 89-99, 1981.
“Monte Carlo analysis of electron transport in small semiconductor
devices including band-structure and space-charge effects,” M.V.
Fischetti and S.E. Laux, Phys. Rev. B, 38, 9721–9745, 1988
20
Lundstrom SMEE 2013
quantum transport
“Nonequilibrium Green’s-function method applied to
double-barrier resonant-tunneling diodes,” R. Lake and S.
Datta, Phys. Rev. B, 45, 6670–6685, 1992.
“Single and multiband modeling of quantum electron
transport through layered semiconductor devices,” R.
Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, J.
Appl. Phys. 81, 7845-7869, 1997.
“NEMO5: A Parallel Multiscale Nanoelectronics
Modeling Tool,” S. Steiger, M. Povolotskyi, H.-H. Park, T.
Kubis, and G. Klimeck, IEEE Trans. Nanotechnology,
10, 1464-–1474, 2011.
Lundstrom SMEE 2013
quantum transport: II
“Current-voltage chartacteristics of self-assembled
monolayers by scanning tunneling microscopy,” S. Datta
and W. Tang, S. Hong, R. Reifenberger, J.I. Henderson,
and C. Kubiak, Phys. Rev. Lett., 79, 2530–2533, 1997.
“First-principles based matrix Green's function approach to
molecular electronic devices: general formalism,” Y. Xue,
S. Datta, Mark A. Ratner, Chemical Phys., 281, 151–170,
2002.
“Ab initio modeling of quantum transport properties of
molecular electronic devices,” J. Taylor, H. Guo, and J.
Wang, Phys. Rev. B., 245407, 2001.
22
Lundstrom SMEE 2013
21
50 years of computational electronics
A suite of sophisticated and very powerful tools:
•  First principles and atomistic tight binding
•  drift-diffusion-Poisson
•  Monte Carlo simulation
•  NEGF quantum transport
+ insight, understanding, new directions for research
23
Lundstrom SMEE 2013
impact
1) Identifying new opportunities for research and technology
development.
2) Broadly communicating insights and understanding.
3) Putting tools into the hands of people with problems to
solve.
24
Lundstrom SMEE 2013
outline
I.  A brief history of computational electronics
II.  Observations and lessons learned
III.  Nanotransistors
IV.  21 Century computational electronics?
Lundstrom SMEE 2013
25
Kadanoff
“Excellent computer simulations are done for a purpose…
1)  to explore uncharted territory
2)  to resolve a well-posed scientific or technical question
3) to make a good design choice.”
The Good the Bad and the Awful:
Scientific Simulation and Prediction
https://www.nanohub.org/resources/3612/
L.P. Kadanov, “Excellence in Computer Simulation,”Computing in Science and
Engineering, (Mar./Apr. 2004).(see also, “Computational Scenarios,” Physics
26
Today, Nov. 2004).
observations
Much of the work was problem-driven.
Much of it was done by the people with problems to solve.
Then, experts in physics, chemistry, numerical analysis,
software made critical contributions.
close to the
problem
close to the
solution
analysts
27
experimentalists
designers
Lundstrom SMEE 2013
two kinds of people
“Because structural analysis and detailing programs are
complex, the profession as a whole will use programs
written by a few. Those few will come from the ranks of
structural “analysts” … and not from the structural
“designers.” Generally speaking, their design and
construction-site experience and background will tend to be
limited.… . More than ever before, the challenge to the
profession and to educators is to develop designers who will
be able to stand up to and reject or modify the results of a
computer-aided analysis and design.”
from a Canadian structural engineer quoted in Engineering and the Mind’s Eye, by
E.S. Furgason
28
“true technology developers”
“…the (ordinary TCAD) user is relaxed, accepting on faith the
program’s results, the (true technology developer) is
concerned and busy checking them in sufficient depth to satisfy
himself that the software developer did not make dangerous
assumptions. …
It takes years of training in good schools, followed by handson design practice, to develop this capability. It cannot be
acquired with short courses, or with miracle pushbutton simulation tools that absolve the engineer from
understanding in detail what he is doing.
“Process and Device Simulation in the Era of Multi-Million-Transistor
VLSI,” C. Bulucea, IEEE Workshop on Simulation and Characterization,
Mexico City, 7-8 September 1998
29
“standing up to a computer”
Scanned in from R. A. Pease, Bootherworth, 1991
30
communicating insights and understanding
From an anonymous reviewer:
“As is the nature of this kind of “simulation:” almost nothing is
explained. One must believe that with the right kinds of
numerical techniques, the curves come out as they do. A few
features can be explained; for the rest of the reader can gaze
at the collection of curves.
These remarks are not made to put these authors, who are
experts in this field, down. Rather, the intent is to indicate
that a group can perpetuate its own methods without
ever making contact to outsiders.
31
communicating insights and understanding
From an anonymous reviewer:
The references come in two groups. First, there are many on
simulation techniques, which one must read because the
present paper would require at least 60 pages to explain its
methods.
Secondly, there are references to the more conventional,
analytical techniques. These are only illustrative; nowhere is
there an attempt to connect the results of this paper to
earlier, analytical techniques.
32
communicating insights and understanding
From an anonymous reviewer:
Is this article alterable to make it more accessible? I am
afraid not. It is the nature of this type of computation that
nothing is revealed (unless the complete computer program is
included).
So I recommend to publish the paper “as is.” It is a SIGN OF
THE TIMES: Everything is included, detailed results come out
of it, nothing is learned!”
33
an approach
1)  Start simple (analytical or Matlab).
2)  Then do experiments and detailed simulations.
3)  Refine the simple model.
4)  Reduce to its essence and communicate to the
broader community – in their language.
5)  Share the codes that were developed.
34
solving important problems
close to the
problem
close to the
solution
1)  Explore uncharted territory
2)  Resolve a well-posed question
3)  Make a good design choice
35
Lundstrom SMEE 2013
outline
I.  A brief history of computational electronics
II.  Observations and lessons learned
III.  Nanotransistors
IV.  21 Century computational electronics?
Lundstrom SMEE 2013
36
Minimum Feature Size
where we were in the late 1990’s
100 µm
1
10 µm
1K
1M
1 µm
1G
100 nm
1T
10 nm
?
1P
1 nm
1950
1970
1990
2010
2030
2050
Year
37
Lundstrom SMEE 2013
physics of MOSFETs
•  Mobility irrelevant
•  Full band structure essential
Energy à
•  Far from equilibrium transport
EC
•  Quantum effects becoming critical
•  “Too complicated to understand”
D. Frank, S. Laux, and M. Fischetti, Int. Electron Dev. Mtg., Dec., 1992.
38
Lundstrom SMEE 2013
( µm )
semi-classical ballistic transport
“A Numerical Study of Ballistic Transport in a Nanoscale MOSFET,” J.-H.
Rhew, Z. Ren, and M. Lundstrom, Solid-State Electronics, 46, 1899–1906,
2002.
Lundstrom SMEE 2013
39
ballistic and dissipative quantum transport
“A Simple Quantum Mechanical Treatment of Scattering in Nanoscale
Transistors,” R. Venugopal, . M. Paulsson, S. Goasguen, S. Datta, and
M.S. Lundstrom, J. Appl. Physics, 93, 5613-5625, 2003.
40
3D to 2D transition
R. Venugopal, S. Goasguen, S. Datta, and M.S. Lundstrom, “A Quantum
Mechanical Analysis of Channel Access, Geometry and Series Resistance in
Nanoscale Transistors,” J. Appl. Physics, 95, 292-305, 2004.
41
Lundstrom SMEE 2013
energy band diagrams
electron potential
energy vs. position
G
source
D
drain
silicon
SiO2
S
(Texas Instruments, ~ 2000)
Lundstrom SMEE 2013
42
the transistor as a barrier controlled device
VG
E
ß low gate voltage
E = −qV
EF
EF
EC
EC
ß VD = VS = 0
source
channel
drain
y
Lundstrom SMEE 2013
43
the transistor as a barrier controlled device
VG
E
ß low gate voltage
E = −qV
Fn
EC
source
channel
Fn
drain
 high drain voltage
y
Lundstrom SMEE 2013
44
the transistor as a barrier controlled device
VG
E
 high gate voltage
E = −qV
EC
Fn
Fn
source
 high drain voltage
y
45
Lundstrom SMEE 2013
how transistors work
2007 N-MOSFET
EC
VGS
VGS
(Courtesy, Shuji Ikeda, ATDF, Dec. 2007)
EC
46
E.O. Johnson, “The IGFET: A Bipolar Transistor in
Disguise,” RCA Review, 1973
understanding MOSFET IV characteristics
electrostatics + transport
Lundstrom SMEE 2013
47
non-planar MOSFETs
“Transistors go Vertical,” IEEE Spectrum, Nov. 2007.
See also: “Integrated Nanoelectronics of the Future,” Robert Chau, Brian Doyle,
Suman Datta, Jack Kavalieros, and Kevin Zhang, Nature Materials, 6, 2007
Lundstrom SMEE 2013
48
textbook MOSFETs: low VDS
L
VS = 0
VG > VT
VD
VGS
Qn ( x ) ≈ Cox (VGS − VT )
I D = W Qn ( x )υ x (x)
I DLIN = W Cox (VGS − VT ) µeffE x
Ex=
49
gate-voltage
controlled
resistor
I DLIN =
VDS
L
W
µ C (V − VT )VDS
L eff ox GS
Lundstrom SMEE 2013
high VDS: velocity saturation
Ey≈
VDS 1.0V
≈
≈ 5 × 10 5 V/cm
L
20 nm
↑ 107
υ
cm/s
υ = υ sat
υ = µE
104
E
105
V/cm →
50
Lundstrom SMEE 2013
carrier transport nanoscale MOSFETs
Velocity (cm/s) à
Energy à
quasi-ballistic
EC
υ sat
( µm )
( µm )
D. Frank, S. Laux, and M. Fischetti, Int. Electron Dev. Mtg., Dec., 1992.
51
Lundstrom SMEE 2013
textbook MOSFETs: high VDS
VS = 0
VG > VT
VD
E x >> 10 4
(Courtesy, Shuji Ikeda, ATDF, Dec. 2007)
I D = W Qn ( x )υ x (x)
I DSAT = −W Cox (VGS − VT )υ sat
I DSAT = W Cox υ sat (VGS − VT )
52
Lundstrom SMEE 2013
textbook MOSFET model
I DSAT = W Cox υ sat (VGS − VT )
gate-voltage
controlled current
source
gate-voltage
controlled
resistor
(Courtesy, Shuji Ikeda, ATDF, Dec. 2007)
I DLIN =
W
µ C (V − VT )VDS
L eff ox GS
53
Lundstrom SMEE 2013
MIT Virtual Source Model
ß 32 nm technology à
µeff → µapp
υ sat → υinj
Lundstrom SMEE 2013
54
why does the traditional model work?
1) It’s obvious (Colin McAndrew, Freescale)
2) There’s more to it than that (Lundstrom)
55
Lundstrom SMEE 2013
Landauer approach to transport
nano-device
gate
M (E),Tel ( E )
EF1
f1 ( E ) =
1
f2 ( E ) =
1 + e( E − EF1 ) kB TL
I=
EF 2 = EF1 − qVDS
2q
T ( E ) M ( E ) ( f1 − f2 ) dE
h ∫
56
Lundstrom SMEE 2013
1
1 + e( E − EF 2 ) kB TL
i) small drain bias
ID =
2q
2q 2 ⎧
⎛ f0 ⎞ ⎫
T
E
M
E
f
−
f
dE
→
(
)
(
)
(
)
⎨ ∫T ( E ) M ( E ) ⎜⎝ −
⎟ dE ⎬V
1
2
∫
h
h ⎩
∂E ⎠ ⎭
I D 2q 2
⎛ f ⎞
=
Tel ( E ) M ( E ) ⎜ − 0 ⎟ dE
∫
⎝ ∂E ⎠
VDS
h
G=
57
Lundstrom 5.3.2013
ii) large drain bias
nano-device
ID =
2q
T ( E ) M ( E ) ( f1 − f2 ) dE
h ∫
f0 ( E ) =
1
( E−EF )
1+ e
ID =
kBTL
EF1 = EFS
f1 ( E ) >> f2 ( E )
EF 2 = EFD = EFS − qVDS
2q
T ( E ) M ( E ) f1 dE
h ∫
58
Lundstrom 5.3.2013
ballistic MOSFET:
I D = W CinvυT (VGS − VT )
ID
VGS = VDD
VDS
I D = WCinv
υT
(VGS − VT )VDS
2k BTL q
59
Lundstrom 5.3.2013
the ballistic IV (Boltzmann statistics)
I D (on) = W υT Cox (VGS − VT )
ID
ballistic
on-current
(V
G
− VT
)
1
ballistic
channel resistance
VDS
I D = GCH VDS =W Cox
60
υT
(V − V )V
( 2kBTL q ) GS T DS
“velocity
saturation”
K. Natori, JAP, 76, 4879, 1994.
Landauer theory of the MOSFET
⎛ T SAT ⎞
I DSAT = W ⎜
υT Cinv (VGS − VT )
⎝ 2 −T SAT ⎟⎠
ID
T SAT >T LIN
VD
⎛
⎞
υT
I DLIN =T LIN ⎜ WCinv (VGS − VT )
V
2k
T
q
( B ) ⎟⎠ DS
⎝
61
Lundstrom SMEE 2013
scattering under high VDS
T LIN =
E
EF1
low VDS
L→

T SAT =
EF 2
high VDS
y
λ0
λ0 + L
λ0
λ0 + 
 << L
T SAT >T LIN
62
Lundstrom 5.3.2013
connection to traditional model (low VDS)
⎛
⎞
υT
I DLIN =T LIN ⎜ WCinv (VGS − VT )
V
( 2kBT q ) ⎟⎠ DS
⎝
I DLIN =
T LIN =
mfp
mfp + L
Dn =
υT mfp
2
W
µ APP Cinv (VGS − VT )VDS
L
1 µ APP = 1 µeff + 1 µ B
63
Lundstrom SMEE 2013
connection to traditional model (high VDS)
⎛ T SAT ⎞
I DS = W υT ⎜
Cinv (VGS − VT )
⎝ 2 −T SAT ⎟⎠
T SAT =
mfp
mfp + 
I DS = Cinv (VGS − VT )υinj
⎡1
1 ⎤
υinj = ⎢ +
⎥
⎣ υT ( Dn  ) ⎦
64
Lundstrom SMEE 2013
−1
Dn =
υT mfp
2
the MOSFET as a BJT
I DSAT = WCinv (VGS − VT )υinj
1
1
1
= +
υinj υT Dn 
“base”
“bottleneck”
E
“collector”

EC ( x )
x
E.O. Johnson, “The IGFET: A Bipolar Transistor in Disguise,” RCA Review, 1973
65
Lundstrom SMEE 2013
physics of MOSFETs
•  Mobility irrelevant
•  Full band structure essential
Energy à
•  Far from equilibrium transport
EC
•  Quantum effects becoming critical
•  “Too complicated to understand”
D. Frank, S. Laux, and M. Fischetti, Int. Electron Dev. Mtg., Dec., 1992.
66
Lundstrom SMEE 2013
( µm )
MIT Virtual Source Model
ß 32 nm technology à
µeff → µapp
υ sat → υinj
Lundstrom SMEE 2013
67
“parameter space compression”
“Parameter Space Compression Underlies Emergent
Theories and Predictive Models”, B.B. Machta, R. Chachra,
M.K. Transtrum, and J.P. Sethna, Science, 342, 604-606, 1
Nov., 2013.
“The microscopically complicated real world exhibits
behavior that often yields to simple, yet quantitatively
accurate descriptions. Predictions are possible despite
large uncertainties in microscopic parameters….”
68
Lundstrom SMEE 2013
limits to barrier control: quantum tunneling
69
4)
3)
2)
1)
from M. Luisier, ETH Zurich / Purdue
the next digital switch…
ab initio
gate
drain
source
semi-emipirical
(pz orbitals)
LDOS
ambipolar conduction
in Schottky barrier
CNFETs
Jing Guo and M.P. Anantram
A. Javey and H. Dai, 2003
70
ultimate CMOS and beyond…
Molecular à
Electronics
Ultimate CMOS
à Beyond CMOS
71
outline
I.  A brief history of computational electronics
II.  Observations and lessons learned
III.  Nanotransistors
IV.  21 Century computational electronics?
Lundstrom SMEE 2013
72
electronics today
CMOS transistors for logic
III-V transistors for RF
A/D and D/A convertors
Digital Signal processor
Microprocessor
ROM and FLASH memory
www.apple.com
73
CMOS imager
Gyroscope
MEMS devices
Magnetometer
Microphone, speaker
LCD display and touch screen
technology and applications
applications
technology
74
Lundstrom SMEE 2013
From Nvidia
presentation at IEDM
2013
21st Century Device Research
Will technology drive electronics
in the 21st Century?
75
Lundstrom SMEE 2013
from hardware to software?
NY Times: June 16, 2013
Disruptions: Mobile Competition Shifts to Software Design
By Nick Bolton SAN FRANCISCO —
“Hardware features … offer only fleeting advantages…”
“But changes to the software are limited only by the skill and
creativity of a company’s engineers and designers and are
not as easily mimicked…”
Lundstrom SMEE 2013
76
era of accelerated technology innovation
•  Differentiated process
technology will become a
competitive advantage.
•  Technology innovation will
become more diverse and less
predictable.
•  Technology innovations will be
driven by the pressing needs of
society.
Dennis Buss, “Microelectronics Industry in Transition,”
http://nanohub.org/resources/19576
re-purposing Si technology….
Sanger
sequencing
Ion
Torrent
2nd generation
sequencing
http://www.genome.gov/sequencingcosts/
78
Ion Torrent (Nature, 475, 349, 21 July, 2011)
77
new materials à new applications
Bio-integrated electronics for cardiac
therapy. This flexible, waterproof circuit
can wrap the surface of the heart…
The New Yorker, 25 Nov., 2013
John Rogers Research Group: http://rogers.matse.illinois.edu
technology and applications
ATI
new
technology
applications
technology
80
new
technology
Lundstrom SMEE 2013
79
electronics for a new era
•  Tools for the new era?
•  Ph.D.’s for the new era?
nano
bio
info
cog
81
technology maestros
society’s grand challenges
•  Are deep in their field
•  Understand related disciplines
and technologies
•  Able to learn, adapt, and
contribute (quickly)
82
nanoHUB-U
SEEC
Semiconductor Electronics
Education Committee
R.B. Adler, et al., 1960-1967
http://nanohub.org/u
1960’s
2010’s
83
nanoHUB-U
http://nanohub.org/u
Lundstrom SMEE 2013
84
materials and devices à circuits and systems
systems
circuits
analytical description
compact models NEEDS
device R&D
theory / simulation
experiment
85
NEEDS
NEEDS Mission
Mission:
To provide SPICE-compatible and physics-based compact
models for emerging nano-devices to researchers in
industry and academia with, but more importantly…
To create and deploy a complete compact model
development environment, the associated processes
and educational resources
and to help connect materials and device research to
circuits and applications.
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needs.nanoHUB.org
needs.nanohub.org
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Conclusions
“Probably the most important invention of the 20th Century.”
- Ira Flatow, Transistorized! (www.pbs.org)
“One of the most amazing tasks that humankind has ever done.”
- George Whitesides (about Moore’s Law)
“The most important moment since man emerged as a life form.”
- Isaac Asimov (about the invention of the planar process)
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the end of Moore’s Law?
“Moore’s Law is about
lowering cost per
function…Progress
continues at a
breathtaking pace, but
transistor scaling is
approaching its limit.
When the limit is reached,
things must change, but
that does not mean that
Moore’s Law has to end.”
Science, 299, 210, 2003
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We’ve only seen the first half of the story…
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