CHA8100
RoHS COMPLIANT
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
TI
Description
Vc
TO9
Vc
Vctrl
Vc
TO8
The CHA8100 chip is a monolithic twostage high power amplifier designed for X
band applications. The HPA provides
typically 11W output power, 40% power
added efficiency and a high robustness on
mismatched output. Moreover it includes:
•
an analogue biasing circuit that makes
it less sensitive to spread and chip
environment.
• an integrated TTL interface that
enables to switch the HPA with a
current consumption lower than 1mA
TTL
Circuit
Biasing
Circuit
IN
OUT
TTL
Circuit
Biasing
Circuit
TO8
TI
Vc
TO9
Vctrl
Vc
Vc
The circuit is 100% DC and RF tested on
wafer to ensure performance compliance.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridges.
Main Features
11W output power in pulse mode
High gain: > 18dB @ 10GHz
High PAE: 40% @ 10GHz
Two biasing modes:
- Digital control thanks to TTL interface
- Analog control thanks to biasing circuit
Chip size: 4.9 x 3.68 x 0.1mm3
Main Characteristics
Vc=9V, Ic (Quiescent) = 2.1A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min
Typ
Unit
+80
10.5
°C
GHz
Top
F_op
Operating temperature range (1)
Operating frequency range
P_sat
Saturated output power @ 25°C
12.5
W
P_3dBc
Output power @ 3dBc @ 25°C
11
W
18.5
dB
G_lin
Linear gain @ 25°C
-40
9
Max
17
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
(1) The reference is the back-side of the chip.
Ref. : DSCHA81000069 - 10 Mar 10
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
X-band High Power Amplifier
CHA8100
Electrical Characteristics
Tamb = 25°C, Vc=9V, Ic (Quiescent) = 2.1A, Pulse wi dth=100µs, Duty cycle = 20%
Symbol
F_op
G_lin
G_lin_T
RL_in
RL_out
P_sat
P_sat_T
Parameter
Min
Typ
Max
Unit
Operating frequency
9
10.5
GHz
Linear gain (9 to 10GHz)
17
18.5
dB
Linear gain variation versus temperature
-0.025
dB/°C
Input Return Loss
-9
dB
Output Return Loss
-15
dB
Saturated output power
41
dBm
Saturated output power variation versus
-0.01
dB/°C
temperature
P_3dBc
Output power @ 3dBc (3)
39.5
40.5
dBm
PAE_3dBc Power Added Efficiency @ 3dBc
35
40
%
Vc
Power supply voltage (3)
8
9
V
Ic
Power supply quiescent current (1)
2.1
A
TI
TTL input voltage
0
5
V
I_TI
TTL input current
0.7
mA
Vctrl
Collector current control voltage
5
V
Ictrl
Control supply current
22
mA
Zctr
Vctrl input port impedance (2)
350
Ohm
Top
Operating temperature range
-40
+85
°C
(1) Parameter tunable by Vctrl when control biasing circuit used.
(2) This value corresponds to the 4 ports in parallel
(3) 0.5V variation on Vc leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings)
Absolute Maximum Ratings (1)
Tamb = 25°C
Symbol
Cmp
Vc
Ic
Ic_sat
Vctrl
Tj
Tstg
(1)
(2)
(3)
(4)
(5)
Parameter
Compression level (2 & 3)
Power supply voltage (4)
Power supply quiescent current
Power supply current in saturation
Collector current control voltage
Maximum junction temperature (5)
Storage temperature range
Values
8
10
3
4
6.5
175
-55 to +125
Unit
dB
V
A
A
V
°C
°C
Operation of this device above anyone of these parameters may cause permanent damage.
For higher compression the level limit can be raised by decreasing the voltage Vc using the
rate 0.5 V / dBc
VC=9V, Temperature=-40°C, Output VSWR=2:1
Without RF input power
Equivalent Thermal resistance to Backside: 6°C /W
Ref : DSCHA81000069 - 10 Mar 10
2/12
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA8100
Typical measured characteristics
Measurements on Jig:
Vc = 9V, VTTL=5V, Ic (Quiescent) = 2.1A, Pulse width=100µs, Duty cycle = 20%
20
15
S21/S11/S22 (dB)
10
5
dBS21
dBS11
dBS22
0
-5
-10
-15
-20
-25
8.5
8.8
9.0
9.3
9.5
9.8
10.0
10.3
10.5
10.8
11.0
Frequency ( GHz)
Gain/Input & Output Return losses (dB). Temperature:+20°C
27
25
Linear gain (dB)
23
21
19
17
15
85°C
25°C
-40°C
13
11
9
7
9
9,2
9,4
9,6
9,8
10
10,2
10,4
Frequency (GHz)
Linear Gain versus frequency and temperature
Ref. : DSCHA81000069 - 10 Mar 10
3/12
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA8100
43
42
Pout @ 3dBc (dBm)
41
40
39
85°C
25°C
-40°C
38
37
36
35
34
33
9
9,2
9,4
9,6
9,8
10
10,2
10,4
Frequency (GHz)
Output Power @ 3dBc versus frequency and temperature
50
47,5
45
PAE @ 3dBc (%)
42,5
40
37,5
35
32,5
85°C
25°C
-40°C
30
27,5
25
22,5
20
9
9,2
9,4
9,6
9,8
10
10,2
10,4
Frequency (GHz)
PAE @ 3dBc versus frequency and temperature
Ref : DSCHA81000069 - 10 Mar 10
4/12
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA8100
5
4,5
Ic @ 3dBc (mA)
4
3,5
3
2,5
2
85°C
25°C
-40°C
1,5
1
0,5
0
9
9,2
9,4
9,6
9,8
10
10,2
10,4
Frequency (GHz)
Ic @ 3dBc versus frequency and temperature
Ref. : DSCHA81000069 - 10 Mar 10
5/12
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA8100
42
40
9GHz
9.5GHz
10GHz
10.2GHz
10.5GHz
Pout (dBm)
38
36
34
32
30
28
0
1
2
3
4
5
6
7
8
Compression (dB)
Output Power @ 25°C versus compression and frequency
50
45
40
9GHz
9.5GHz
10GHz
10.2GHz
10.5GHz
Pae (%)
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
Compression (dB)
PAE @ 25°C versus compression and frequency
Ref : DSCHA81000069 - 10 Mar 10
6/12
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
8
X-band High Power Amplifier
CHA8100
4
3,8
3,6
3,4
Ic (A)
3,2
3
2,8
2,6
9GHz
9.5GHz
10GHz
10.2GHz
10.5GHz
2,4
2,2
2
0
1
2
3
4
5
6
7
8
Compression (dB)
Ic (A)
Collector current @ 25°C versus compression and fr equency
3
2,8
2,6
2,4
2,2
2
1,8
1,6
1,4
1,2
1
0,8
0,6
0,4
0,2
0
TTL
Vctrl
TI -40°C
TI +20°C
TI 85°C
Vctrl -40°C
Vctrl +20°C
Vctrl +85°C
0
1
2
3
4
5
6
TI/Vctrl (V)
Collector quiescent current versus TI & Vctrl and temperature
Ref. : DSCHA81000069 - 10 Mar 10
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Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA8100
40
35
-40°C
+20°C
+85°C
Ictrl (mA)
30
25
20
15
10
5
0
0
1
2
3
4
5
6
5
6
Vctrl (V)
Control current versus control voltag e & temperature
I_TI f(TI )
1,2
-40°C
1
+20°C
+85°C
I_TI (mA)
0,8
0,6
0,4
0,2
0
0
1
2
3
4
TI (V)
TTL input current versus TTL voltage and temperature
Ref : DSCHA81000069 - 10 Mar 10
8/12
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA8100
Chip Mechanical Data and Pin references
1
12
Units: µm
Chip width and length are given with a tolerance of ±35µm
Chip thickness = 100µm +/- 10 µm
RF pads (1, 12) = 96 x 196µm²
DC pads (2, 3, 4, 5, 6, 7, 9,10, 14, 15, 17, 18, 19, 20, 21, 22) = 96 x 96µm²
DC pads (8, 16) = 192 x 96µm²
DC pads (11, 13) = 288 x 96µm²
Pin number
1
7, 9, 15, 17
2, 22
4, 20
5, 19
6, 10, 14, 18
3, 8, 11, 13, 16, 21
12
Ref. : DSCHA81000069 - 10 Mar 10
Pin name
IN
C1, C2
TI
TO9
TO8
GND
V,Vc1,Vc2
OUT
Description
Input RF
Collector current control voltage
TTL input
TTL output when Vcx=9V
TTL output Vcx=8V
Ground (NC)
Power supply voltage
Output RF
9/12
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA8100
Bonding recommendations
For thermal and electrical considerations, the chip should be brazed on a metal base plate.
The RF, DC and modulation port inter-connections should be done according to the following
table:
Port
Connection
Inductance (Lbonding) = 0.3nH
400µm length with wire diameter of 25 µm x2
Inductance (Lbonding) = 0.3nH
400µm length with wire diameter of 25 µm x2
IN (1)
OUT (12)
st
Inductance (Lbonding) =0.7nH
Two 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =1nH
One 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =0.7nH
Two 1.2mm length wires with a diameter of 25 µm
Inductance (Lbonding) =1nH
One 1.2mm length wires with a diameter of 25 µm
DC pads to 1 decoupling level for
double bonding
DC pads to 1st decoupling level for
single bonding
st
1 decoupling level to 2nd decoupling
level for double bonding
st
1 decoupling level to 2nd decoupling
level for single bonding
Assembly recommendations in test fixture
(using analogue biasing circuits)
Vc
Vctrl
2
3
4
5
6
7
8
9
10
11
1
12
OUT
IN
100pF
22 21 20
19 18
17
16
15 14
13
10nF
1µF
Vctrl
100µF
Vc
Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be
preferred.
Ref : DSCHA81000069 - 10 Mar 10
10/12
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
X-band High Power Amplifier
CHA8100
Assembly recommendations in test fixture
(using TTL circuits)
* Performances obtained with the same accesses connected to the same supply
Note: Supply feed should be capacitively by-passed. 25µm diameter gold wire is to be
preferred.
Biasing possibilities
TTL / Vcontrol
Vc1, Vc2, V
Biasing via TTL interface
9V
Biasing via TTL interface
8V
Biasing via analogue control
device
Ref. : DSCHA81000069 - 10 Mar 10
9V or 8V
11/12
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
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Connections
TO9 connected to C1 and C2
C2 & T08 not connected
TO8 connected to C1 and C2
C2 & T09 not connected
C2,V, Ti, TO8, TO9 not connected
Specifications subject to change without notice
X-band High Power Amplifier
CHA8100
Recommended ESD management
Refer to the application note AN0020 available at http://www.ums-gaas.com for ESD
sensitivity and handling recommendations for the UMS products.
Ordering Information
Chip form
:
CHA8100-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref : DSCHA81000069 - 10 Mar 10
12/12
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice