Supporting Information
Annealing Effects on the Physical and Optical Properties of
Cu2S/CIGS Core/Shell Nanowire Arrays
Liqiang Li1*, Yaqiang Liu1, Wenxing Zhang1, Wencong Chen1, Peng Li1, Shan Ren2*
1
School of Physics, Shangqiu Normal University, Shangqiu 476000, P. R. China
2
State Key Laboratory of Optoelectronic Materials and Technologies, The Key Laboratory of
Low-carbon Chemistry & Energy Conservation of Guangdong Province, The Center for
Nanotechnology Research, School of Physics Science and Engineering, Sun Yat-sen
(Zhongshan) University, Guangzhou 510275, P. R. China
E-mail: liliqiang3672603@163.com
(1) The effect of thermal annealing on the Cu2S nanowire arrays
SEM images in Figure S1(a) and (c) show the typical morphologies of Cu2S nanowire arrays
with different diameters. The morphologies of the Cu2S nanowire arrays are dependent on the
temperatures of solid-gas reaction. The average diameters of the nanowire arrays correspond
to Figure S1(a) and (c) is 160 nm and 250 nm, respectively. The nanowire arrays with average
diameter of 160 nm will collapse after thermal annealing of 500°C for 15 h (Figure S1(b)),
while the morphology of Cu2S nanowire arrays with average diameter of 250 nm changes
very little, only the nanowires with smaller diameters (< 200 nm) that caused by the
nonuniform growth have a melting phenomenon (Figure S1(d)). Besides that, the thermal
annealing also indicates a dramatic decrease of the melting point of Cu2S (1100°C).
Figure S1. SEM images of Cu2S nanowire arrays with different diameters before and after annealing.
(a-b) Corresponding to the Cu2S nanowire arrays possessed a diameter of 160 nm. (c-d) Corresponding
to the Cu2S nanowire arrays possessed a diameter of 250 nm.
Figure S2. HRTEM image of Cu2S/CIGS core/shell nanowire after thermal annealing at 350°C.