EW-MOVPE XI
EPFL–SB–IPEQ-LPN
D3-424 - PH-Building, Station 3
CH-1015 Lausanne, Switzerland
Secretary: + 41 21 693 33 21
Fax:
+ 41 21 693 03 33
E-mail: secretary.ewmovpe@epfl.ch
Web : http://ewmovpe.epfl.ch
The 11th EUROPEAN WORKSHOP ON METALORGANIC VAPOUR PHASE EPITAXY
LAUSANNE, SWITZERLAND
June 5-8th, 2005
EW-MOVPE XI REGISTRATION FORM
KINDLY FILL IN AND FAX THIS FORM TO 00 41 21 693 03 33 OR MAIL TO THE ADDRESS ABOVE
Title (Prof., Dr., Mr., Mrs.) and full Name ___________________________________________________
Institution / Affiliation ___________________________________________________________________
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Please state what you are registering for:
Workshop / regular ______________
CHF 700.-
Workshop / student _____________
CHF 450.- Kindly join proof of student status
Tutorials / regular _______________
CHF 100.- Please indicate your preferences on 2nd page
Tutorials / student _______________
CHF 30.- Idem
Chillon Castle visit & Workshop Dinner CHF 130.- Included in regular registration fee
Olympic Museum Visit __________
CHF 50.-
Payment
Bank transfer
Please note that your registration will be effective only after reception of your bank transfer
For National payments use Bank Account Number: 266556.05U, CCP 10-315-8
International Bank Account Number (IBAN): CH91 0024 3243 2665 5605 U
SWIFT Bank Identifier Code (BIC): UBSWCHZH80A
Bank address: UBS SA, Case Postale 126, CH-1015 Lausanne, Reference: “EPFL – SB, EW-MOVPE XI” and full name
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Tutorials preferences sheet
The 5 short courses described below will be given on the Workshop site in EPFL on Sunday June 5th 2005
between 12:30 and 16:30 in two parallel sessions allowing to attend up to three courses. In order to set a
schedule that satifyes the majority of attendants, please rank the tutorials by level of interest for you
Tutorial I : Scanning probe microscopy for semiconductor characterization
Dr. Benjamin Dwir Laboratory of Physics of Nanostructures, EPFL, Lausanne, Switzerland
Scanning probe microscopy (SPM) includes a variety of methods, all have in common the use of a nanometer-size probe
that is being scanned at close proximity to the surface under investigation. Since the invention of the scanning tunneling
microscope (STM) in 1981 and of the atomic-force microscope (AFM) in 1985, they have been used to characterize
semiconductor materials, under high vacuum as well as at ambient conditions. In this course I'll scan the different SPM
techniques available today, from the 'classical' AFM to special electric and magnetic field measurements, and show typical
exemples for their use in the characterization of semiconductor materials and devices. Imaging of morphology,
composition, growth front, defects, dopants, magnetic features, will all be shown.
Tutorial II : Optical characterisation of bulk materials and heterostructures
Dr. J.-D. Ganière Institute of Quantum Electronics and Photonics, EPFL, Lausanne, Switzerland
In this course I will describe the most common experimental methods (photoluminescence, photoluminescence excitation,
absorption, reflectivity… and cathodoluminescence) used to obtain the optical signature of bulk material, 2D, 1D and 0D
structures. The limitations of the different techniques as well as their complementarities will be highlighted and I will show,
through chosen exemples, how the optical signature is related to material quality. Finally I will demonstrate the importance
of time resolved spectroscopy to probe the dynamics of the carriers in nanostructures (spatially and time resolved PL and
CL). Examples will be given for III-V as well as III-nitride structures.
Tutorial III : Scanning and Transmission Electron Microscopy
Prof. Klaus Leifer Angstromlaboratory, University of UPPSALA, Sweden
In this tutorial we will give an overview over the most important scanning electron microscopy (SEM) and transmission
electron microscopy (TEM) techniques with a special focus in work related to the characterisation of semiconducting
materials. SEM and TEM techniques have strongly contributed to the development of semiconductor nanostructures. These
techniques cannot only be used to assess properties of semiconductors with nanometer and atomic scale resolution, but
have become also fast characterisation techniques. In this tutorial, we will explain the basics of the underlying electron
microscopy techniques for thin film and semiconductor characterisation. Besides these more general characterisation
techniques, we will show how dedicated techniques such as energy filtered imaging, Z-contrast imaging and electron
holography have contributed to the understanding of the physics of semiconductor nanostructures.
In addition to this tutorial, laboratory demonstrations in the electron microscopy centre will be given during the workshop
Tutorial IV : Fundamentals of MOVPE growth
Dr. Maarten Leys Interuniversity Microelectronics Center, Leuven (Belgium)
In this tutorial we will give an overview over the most important scanning electron microscopy (SEM) and transmission
electron microscopy (TEM) techniques with a special focus in work related to the characterisation of semiconducting
materials. SEM and TEM techniques have strongly contributed to the development of semiconductor nanostructures. These
techniques cannot only be used to assess properties of semiconductors with nanometer and atomic scale resolution, but
have become also fast characterisation techniques. In this tutorial, we will explain the basics of the underlying electron
microscopy techniques for thin film and semiconductor characterisation. Besides these more general characterisation
techniques, we will show how dedicated techniques such as energy filtered imaging, Z-contrast imaging and electron
holography have contributed to the understanding of the physics of semiconductor nanostructures.
In addition to this tutorial, laboratory demonstrations in the electron microscopy centre will be given during the workshop
Tutorial V : Safety and toxicology in MOVPE
Mrs. Nicole Proust THALES Research and Technology, Orsay, France
This short course has four objectives :
1. to present quickly industrial toxicology and relevant biological mechanisms : from toxicant exposure and
penetration routes, to metabolisation, excretion and intoxication,
2. to introduce speciation, to give toxicological data on a lot of arsenic, phosphorous, gallium, indium species,
3. to present the arsenic biological monitoring that can be performed,
4. to review the hazard sources related to GaAs, InP and GaN MOVPE : from precursors to maintenanc
Registration fees
The regular registration fee includes access to all technical sessions (except tutorials), the get-together party, lunches
and coffee breaks, the workshop dinner and one printed copy of the proceedings. It does not include the visit to the
Olympic Museum. Access to the excursion boat is included in the regular registration fee but is limited to 180
passengers. Access will be granted according to the registration order.
The student registration fee includes access to all technical sessions (except tutorials), the get-together party, lunches,
coffee breaks and one printed copy of the proceedings. It does not include the visit to the Olympic Museum, the boat trip
and the Workshop Dinner. Please join a proof of student status with your registration form.
Tutorials
Regular: CHF 100.Student: CHF 30.The regular Tutorial registration fee includes access to any 3 of the 5 short courses, coffee breaks and one printed copy
of the tutorial summaries.
The student Tutorial registration fee includes access to any 3 of the 5 short courses, coffee breaks and one CD of the
tutorial summaries.
Contact
For any further enquiries, you are welcome to contact the Workshop Office at secretary.ewmovpe@epfl.ch