RUSSIAN ACADEMY OF SCIENCES
NATIONAL RESEARCH NUCLEAR UNIVERSITY «MEPHI»
MOSCOW STATE UNIVERSITY
ST. PETERSBURG STATE POLYTECHNIC UNIVERSITY
MOSCOW AVIATION INSTITUTE
YAROSLAVL BRANCH OF INSTITUTE OF PHYSICS AND TECHNOLOGY RAS
INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS RAS
PROGRAM
OF THE XXII INTERNATIONAL CONFERENCE ON
ION - SURFACE INTERACTIONS
(ISI-2015)
20th – 24th August 2015
Moscow 2015
Sponsors of ISI - 2015:
Russian Foundation for Basic Research
«Elsevier»
National Research Nuclear University «MEPhI»
Organizers
Russian Akademy of Sciences (RAS)
National Research Nuclear University «MEPhI»
Moscow State University
St. Petersburg State Polytechnic University
Moscow Aviation Institute
Institute of Microelectronics Technology
and High Purity Materials RAS
2
ORGANISING COMMITTEE
Yu.A.Ryzhov
– Chairperson, Academician of RAS
M.N.Strikhanov – Co chairperson, National Research Nuclear University
«MEPhI»
V.E.Yurasova – Vice chairperson, Moscow State University
A.I.Titov
– Vice chairperson, St. Petersburg State Polytechnic
University
V.A.Kurnaev
– Vice chairperson, National Research Nuclear University
«MEPhI»
A.F.Vyatkin
– Vice chairperson, Institute of Microelectronics
Technology and High Purity Materials RAS
E.D.Marenkov – Scientific secretary, National Research Nuclear
University «MEPhI»
Members of organizing committee
V.I. Bachurin
– Yaroslavl branch of Institute of Physics and Technology RAS
L.B. Begrambekov – National Research Nuclear University «MEPhI»
A.M. Borisov
– Moscow Aviation Institute
J.S. Colligon
–The University of Huddersfield
Yu.M.Gasparyan – National Research Nuclear University «MEPhI»
V.A.Ivanov
– General Physics Institute of RAS
P.A. Karaseov
– St. Petersburg State Polytechnic University
G.V. Kornich
– Zaporozhye National Technical University
L.M. Kovrizhnikh – General Physics Institute of RAS
A.N.Petrovskii
– National Research Nuclear University «MEPhI»
A.A. Pisarev
– National Research Nuclear University «MEPhI»
A.A.Semyonov
– Moscow Aviation Institute
I.I. Shkarban
– Moscow Aviation Institute
E.Yu.Zykova
– Moscow State University
3
PROGRAM COMMITTEE
V.E. Yurasova
– Chairperson, Moscow State University, Russia
Members of programme committee
A.G. Borisov
– University of Paris-Sud, France
V.T. Gritsyna
– Kharkov State University, Ukraine
S.O. Kucheyev
– Lawrence Livermore National Laboratory, USA
Yu.V. Martynenko – National Research Center «Kurchatov Institute», Russia
E.S. Mashkova
– Institute of Nuclear Physics of MSU, Russia
T. Michely
– University of Koeln, Germany
A.N.Mikhailov
– University of Nizhni Novgorod, Russia
A.A. Pisarev
– National Research Nuclear University «MEPhI», Russia
B.N.Popok
– Aalborg University, Denmark
D.I. Tetelbaum
– University of Nizhni Novgorod, Russia
S. Zhang
– Nanyang Technological University, Singapore
INTERNATIONAL ADVISORY BOARD
A.Aleksandrov (Russia), A.Bazhin (Ukraine), J.Burgdorfer (Austria),
F.Dzhurabekova (Finland), V. Esaulov (France), R. Hoekstra (The
Netherlands)
F.F. Komarov (Belorussia), U.Kh. Rasulev (Uzbekistan), P. Sigmund
(Denmark), A.I. Titov (Russia), R.Webb (UK), J. Williams (Australia),
H.Winter (Germany), Y.Yamazaki (Japan).
4
SCIENTIFIC SECTIONS
1.
2.
3.
4.
5.
6.
Sputtering, surface structure, desorption.
Ion scattering and propagation.
Emission of ions, electrons, photons and X-rays under ion-surface interaction.
Ion implantation and surface modification.
Ion-assisted processes in thin films and nanostructures.
Plasma-surface interaction - physics and technology.
Oral reports will be held in the conference hall from 20 to 24 August from
900 to 1800. Invited talks will be allowed 25 minutes and additional 5 minutes for
discussion. Oral contributions will be 10 minutes and additional 5 minutes for
discussion.
The working time of poster sessions is from 1800 to 2000. Poster reports
should be put on board 60 cm x 80 cm in the evening before the working day of
the respective poster section. Poster stands will be marked with numbers
corresponding to the numbers of the poster reports in this program.
Poster schedule:
20 August – sections 1, 2 and 3;
21 August – sections 4 and 5;
22 August – section 6.
830-900 – Breakfast, 1045-1100 – Coffee break, 1300-1400 – Lunch, 1600-1615 –
Tea break, 2000-2030 – Dinner.
5
20 August, Thursday
PLENARY SESSION
Chairs: Yu. Ryzhov, V.Kurnaev
830-1000
REGISTRATION OF THE PARTICIPANTS
1000-1010
OPENING OF THE CONFERENCE
1015–1040
Friedrich Aumayr (Vienna University of Technology, Austria)
Interaction of slow highly charged ions with ultrathin carbon
nanomembranes and graphene.
1045-1110
Arnaud Delcorte (Universite' Catholique de Louvain, Belgium)
Fundamentals of soft matter desorption, molecular analysis and depthprofiling using massive keV clusters.
1115-1130
Coffee break
1130-1155
Kenji Kimura (Kyoto University, Japan)
Temperature measurement of thermal spike using desorption of
nanoparticles.
1200-1125
Thomas Michely (University of Cologne, Germany)
New phenoma in 2D-layer irradiation with low energy ions.
1230-1255
Alexander Pisarev (National Research Nuclear University, Russia)
Technological applications of plasma surface interactions.
1300-1310
Taking a photo of the conference participants
1315-1400
Coffee break
6
INVITED TALKS AND ORAL CONTRIBUTIONS
20 August, Thursday
Section 1. Sputtering, surface structure, desorption
Chairs: L.Begrambekov, Yu.Gasparyan
1400-1425
Vladimir Popok (Aalborg University, Denmark)
Low-energy interaction of metal cluster ions with surfaces.
1430-1455
Gregor Hlawacek (Helmholtz-Zentrum Dresden-Rossendorf, Germany)
High resolution surface patterning with the Helium Ion Microscope.
1500-1525
Stefan Facsko (Helmholtz-Zentrum Dresden-Rossendorf, Germany)
Spontaneous pattern formation on ion irradiated semiconductor surfaces.
1530-1555
Christina Trautmann (GSI Helmholz Center, Germany)
Sputtering with heavy ions in the electronic stopping regime.
1600-1615
Tea break
1615-1640
Lothar Bischoff (Helmholtz-Zentrum Dresden-Rossendorf, Germany)
Surface modification with heavy mono- and polyatomic ions.
1645-1710
Jean-Mark Layet (University of Aix-Marseille, France)
H-production by surface ionization on carbon materials in H2 plasma.
1715-1725
H.H.Brongersma, V.S.Chernysh, P.Brüner, T.Grehl.
Surface composition of ion bombarded alloys.
1730-1740
D.V.Shyrokorad, G.V.Kornich, S.G. Buga.
Molecular dynamics simulation of bimetal atomic clusters under low
energy Ar ion bombardment.
1745-1755
A.A.Eksaeva, E.D.Marenkov, D.Borodin, A.Kirshner, M.Laenger,
V.A.Kurnaev, A. Kreter.
ERO-PSI code for numerical simulation of experiments on tungsten
sputtering in linear plasma device PSI-2.
1800-2000
POSTERS, sections 1, 2 and 3.
2000-2030
Dinner
7
21 August, Friday
Section 2. Ion scattering and propagation
Chairs: G.Kornich, V.Bachurin
900-925
930-955
Stefan Nagele (Vienna University of Technology, Austria)
Attosecond chronoscopy of photoemission.
Srdjan Petrović (Vinča Institute of Nuclear Sciences, Serbia)
Classical and quantum rainbow channeling of charged particles in very
thin silicon crystals and carbon nanotubes.
1000-1025
Franciszek Krok (Jagiellonian University, Poland)
Pillars formation on compound semiconductor surfaces under focused
and broad ion beam irradiation.
1030-1040
Dong-Hai Zhang, Jun-Sheng Li, S. Kodaira and N. Yasuda.
Projectile fragment emission in the fragmentation of silicon on carbon
and polyethylene targets at 684 A MeV.
1045-1100
Coffee break
1100-1125
David Tetelbaum (Lobachevsky State University of Nizhnii Novgorod,
Russia)
Surface-oxide-related long-range effect under ion and light irradiation of
solids.
1130-1140
Yu.A.Belkova, N.V.Novikov, Ya.A.Teplova.
Equilibrium thickness of carbon interacting with nitrogen and neon
beams.
1145-1155
P.Yu.Babenko, A.N.Zinoviev, A.P.Shergin.
Focusing of particles scattered at a solid surface.
1200-1210
V.S.Bronsky, S.N.Shilobreeva, V.I.Shematovich, A.V.Khokhlov,
S.Barabash, M.Wieser.
Modeling of ice sputtering and scattering by the H+, O+ ions for the
conditions of the Moon and Jupiter's moons surfaces.
1215-1225
A.M.Ionov, R.N.Mozhchil, A.F.Redkin, S.G.Protasova,
N.S.Vorobyova.
Influence of ion bombardment on the electronic structure and the valence
states of uranium in oxygen-containing compounds.
1230-1240
S.A.Ryabtsev, Yu.M.Gasparyan, M.S.Zibrov, A.A.Pisarev.
Deuterium thermal desorption from radiation defects in tungsten.
1245-1255
G. Filippov.
Passage of particle through a cylindrical structure.
1300-1400
Lunch
8
21 August, Friday
Section 3. Emission of ions, electrons, photons and X-rays under ion-surface
interaction
Chairs: V.Popok, S.Krasheninnikov
1400-1425
Vladimir Palitsin (University of Surrey, UK)
Ambient Pressure MeV Secondary Ion Mass Spectrometry.
1430-1455
Philippe Roncin (Université Paris-Sud, France)
Grazing Incidence Fast Atom Diffraction (GIFAD) and Molecular
Beam Epitaxy.
1500-1525
Eli Kolodney (Israel Institute of Technology, Israel)
Velocity correlated cluster emission: a new surface sputtering
mechanism by a large polyatomic projectile.
1530-1555
Toshio Seki (Kyoto University, Japan)
Imaging mass spectrometry with MeV-energy heavy ion beams.
1600-1615
Tea break
1615-1640
Paolo Milani (University of Milano, Italy)
Supersonic cluster beam implantation in polymers: a novel tool for
stretchable electronics and optics.
1645-1710
Ahmed Hassanein and HEIGHTS Team (Purdue University, USA)
Plasma-Surface Interactions during normal and abnormal Tokamak
operation.
1715-1725
V.V.Khvostov, E.Yu.Zykova. Inelastic processes in ion interaction
with ZrO2 surface.
1730-1740
M.V.Sorokin, A.Dauletbekova, K.Schwartz, M.Baizhumanov,
A.Alkilbekov, M.Zdorovets.
Energy loss effect on color center creation in lithium fluoride crystals.
1745-1755
Yu.V.Kapitonov, P.Yu.Shapochkin, Yu.V.Petrov, V.A.Lovcjus,
S.A.Eliseev, Yu.P.Efimov, V.V.Petrov and V.V.Ovsyankin.
InGaAs/GaAs quantum well modification by focused ion beam.
1800-1810
D.N.Makarov, V.I.Matveev. Mass spectra of clusters at ion sputtering
metal.
1815-2000
POSTERS, sections 4 and 5.
2000-2030
Dinner
9
22 August, Saturday
Section 4. Ion implantation and surface modification
Chairs: А.Titov, А.Azarov
900-925
Kai Nordlund (Helsinki University, Finland)
Ion irradiation of Si, GaN and Au nanowires: order-of-magnitude
enhancements of damage production and sputtering.
930-955
Vladimir Popov (Rzhanov Institute of Semiconductor Physics, Russia)
Formation, properties and applications of NV-centers in ion-implanted
diamond.
1000-1025
Igor Kossyi (Prokhorov General Physics Institute of the RAS, Russia)
Explosive emission phenomena on the plasma-metal interface. Physics and
applications.
1100-1115
Coffee break
1115-1140
Alexander Azarov (University of Oslo, Norway)
Diffusion and trapping of Zn vacancies and interstitials in ion implanted
ZnO.
1145-1210
Johan Malherbe (University of Pretoria, South Africa)
Some ion bombardment effects in SiC.
1215-1240
Thomas Greber (University of Zurich, Switzerland)
Low energy ion implantation beneath 2D materials like boron nitride or
graphene: Nanotents and Can opener effect.
1245-1255
C.Bundesmann, R.Feder, H.Neumann.
The ion beam sputter deposition process of Ag.
1300-1400
Lunch
10
22 August, Saturday
Section 4. Ion implantation and surface modification
Chairs: V.Popov, Z.Insepov
1400-1425
Vjacheslav Ivanov (Prokhorov General Physics Institute of the RAS, Russia)
Microplasma discharge on a metal surface covered with a dielectric film:
Experiment, theory, and applications.
1430-1455
Zinetula Insepov (Purdue University, USA)
Radiation modification of graphene with gas cluster ion beams.
1500-1525
Ivan Santos (University of Valladolid, Spain)
Multiscale defect modeling: from fundamental properties to macroscopic effects
1530-1540
V.V.Privezentsev, V.S.Kulikauskas, V.V.Zatekin, A.V.Goryachev,
A.A.Batrakov.
Nanoparticle formation in Zn+ ion hot implanted Si.
1545-1555
Nana Pradhan, S.K.Dubey.
Silicon ion irradiation into manganese implanted gallium nitride DMS.
1600-1615
Coffee break
1615-1625
A.V.Naumkin, A.Yu.Pereyaslavtsev.
Ion-induced auger electron spectroscopy of some Al-Mg alloys.
1630-1640
P.A.Karaseov, A.I.Titov, K.V.Karabeshkin, M.W.Ullah, A.Kuronen,
F.Djurabekova, K.Nordlund.
Experimental study and MD simulation of damage formation in GaN under
atomic and molecular ion irradiation.
1645-1655
D.Sinelnikov, V.Kurnaev, D.Kolodko, N.Solovev. Tungsten nano-fuzz surface
degradation under ion beam.
1700-1900
POSTERS, section 6
2000-2200
Conference dinner
11
23 August, Sunday
Section 5. Ion-assisted processes in thin films and nanostructures
Chairs: A.Pisarev, А.Borisov
900-925
Xiao-Tao Hao (Shandong University, China)
Hydrogenated oxide semiconductor films by sputtering.
930–955
Mike Russell (University of Pretoria, South Africa)
Non-linear transport of energy in thin films and surface interactions.
1000-1025
Iva Bogdanović Radović (Rudjer Bošković Institute, Croatia)
Formation and tailoring of metal and semiconductor quantum dots in
amorphous matrices by MeV ions.
1030-1040
Brandon Holybee (University of Illinois at Urbana-Champaign, USA)
Compositional and structural evolution of self-organized nanostructures
during early stage ion irradiation of GaSb.
1045-1100
Coffee break
1100-1110
O.V.Ogorodnikova.
Migration, trapping and release of deuterium from tungsten in the presence of
high density of defects: theory and experiment.
1115-1125
N.N.Andrianova, A.M.Borisov, V.A.Kazakov, E.S.Mashkova,
Yu.N.Palyanov, V.P.Popov, E.A.Pitirimova, R.N.Rizakhanov,
S.K.Sigalaev.
Graphitization of diamond surface at high-dose ion bombardment.
1130-1140
S.V.Konstantinov, F.F.Komarov, A.D.Pogrebnjak.
Influence of ion irradiation on structure of high-entropy coatings (Ti, Hf, Zr,
V, Nb)N.
1145-1155
N.N.Cherenda, V.V.Uglov, A.K.Kuleshov, V.M.Astashynski,
A.M.Kuzmitski. Alloying and nitriding steels by compression plasma flows
treatment.
1200-1210
D. Kogut, K. Achkasov, J.M. Layet, A. Simonin, A. Gicquel, J.Achard,
G.Cartry. Negative-ion production on the surface of diamond materials in
low pressure hydrogen plasmas.
1215-1225
K.Gutorov, I.Vizgalov, F.Podolyako, I.Sorokin.
Study of plasma interaction with fusion reactor materials at the linear
simulator with a beam-plasma discharge.
1230-1240
R.A.Andrievski. The interface role in the nanostructured films behavior
under ion irradiation.
1245-1255
A.V.Lubenchenko, A.A.Batrakov, A.B.Pavolotsky, D.A.Ivanov,
O.I.Lubenchenko, I.V.Shurkayeva.
Modification of niobium oxide films with low-current ion beams.
1300-1400
Lunch
1420 -1930
Excursions
2000 -2200
Dinner
12
24 August, Monday
Section 6. Plasma-surface interaction - physics and technology
Chairs: V.Ivanov, V.Kurnaev
900-925
Sergei Krasheninnikov (National Research Nuclear University, Russia)
Future directions in edge plasma physics and plasma material interactions in
fusion devices: some results from the FES community planning workshops
2015.
930–955
Pavel Strelkov (Prokhorov General Physics Institute of the RAS, Russia
)
Generation and amplification of microwave radiation by the injection of strong
relativistic electron beam in a plasma waveguide.
1000-1010
A.V.Rogov, Yu.V.Martinenko, Yu.V.Kapustin, N.E.Belova. Fabrication of
fine-dispersed coatings at deposition with simultaneous sputtering.
1015-1025
S.Krat, Yu.Gasparyan, A.Pisarev, M.Mayer, G.de Saint-Aubin, I.Bykov,
P.Coad, J. Likonen, W. van Renterghem, C.Ruset, A.Widdowson, JETEFDA contributors. Comparison of erosion and deposition in jet during carbon
and ITER-like campaigns.
1030-1045
Coffee break
1045-1055
A.Kuzmin, H.Zushi, I.Takagi, K.Hanada, Y.Oyama, S.Sharma, A.Rusinov,
Y.Hirooka, H.Zhou, M.Kobayashi, M.Sakamoto, N.Youshida,
K.Nakamura, A.Fujisawa, K.Matsuoka, H.Idei, Y.Nagashima,
M.Hasegawa, T.Onchi, K.Mishra, S.Banerjee.
Permeation probes for hydrogen retention measurements.
1100-1110
Yu.N.Devyatko, V.V.Novikov, O.V.Khomyakov, D.A.Chulkin.
А model of radiation-induced densification of oxide nuclear fuel.
1115-1125
A.S.Kaplevsky, L.B.Begrambekov, O.A.Dvoychenkova, A.E.Evsin,
A.M.Zakharov, P.A.Shigin. On the possibility of decreasing thermal
desorption from titanium during ion irradiation.
1130-1230
Conference discussion
1235-1255
Summary
1300-1400
Lunch
1430
and later
Departure of participants from Moscow
13
POSTER REPORTS
20 August, Thursday
Section 1. Sputtering, surface structure, desorption
1. T.T.Thabethe, T.T.Hlatshwayo, J.B.Malherbe, E.G.Njoroge and T.G.Nyawo. The effect
of thermal annealing in different atmosphere on Tungsten (W) deposited in 6H-SiC.
2. I.I.Bardyshev, V.A.Kotenev, A.D.Mokrushyn, A.Yu.Tsivadze. Interaction of positrons
beam with surface charge on the metal-polymer interface.
3. S.F.Belykh, A.B.Tolstogouzov, A.A.Lozovan. The model of dimers emitted from metals in
the non-linear sputtering mode.
4. V.N.Berzhansky,
A.N.Shaposhnikov,
A.R. Prokopov,
A.V. Karavainikov,
T.V.Mikhailova, V.I.Belotelov, N.E.Khokhlov, Yu.E. Vysokikh. The effect of the ion
etching of sputtered Bi: YIG films on their surface morphology and magneto-optical
properties.
5. I.E.Borodkina, I.V.Tsvetkov. Plasma-facing surface sputtering estimation using a model of
the electric potential distribution in the presence of secondary electron emission in oblique
magnetic field.
6. N.V.Volkov, D.A.Safonov. High-dose sputtering and erosion of tungsten surface at higher
temperatures (100-500оС) under irradiation by flow of He and Ar ions with a wide energy
spectrum.
7. E.V.Duda, G.V.Kornich. Simulating the dynamics of incident Cu3 cluster on the Cu(100)
surface with monatomic step.
8. O.А.Yermolenko, G.V.Kornich, S.G.Buga. Sputtering of metal clusters on hydrocarbon
surfaces: a comparative molecular dynamics study.
9. A.E.Ieshkin, Yu.A.Ermakov, V.S.Chsernysh. Angular distributions of particles sputtered
from metals with gas cluster ions.
10. G.V.Kornich. Simulation of sputtering of surface metal nanoclusters under low energy ion
bombardment.
11. A.V.Lubenchenko,
A.A.Batrakov,
A.B.Pavolotsky,
S.Krause,
D.A.Ivanov,
O.I. Lubenchenko, I.V. Shurkayeva. Sputtering of thin films of niobium nitride by argon
ions.
12. S.E.Maksimov, N.Kh.Dzhemilev, S.F.Kovalenko, V.I.Tugushev, O.F.Tukfatullin,
Sh.T.Khojiev. Average decay rate constants and excitation energies of metal clusters
sputtered by SF5+ and inert gas ions.
13. V.I.Matveev, S.N.Kapustin. Cluster sizes under ion sputtering of solids considering
fragmentation processes.
14. K.F.Minnebaev, K.A.Tolpin, V.E.Yurasova. Anisotropy of sapphire single crystal
sputtering.
15. B.L.Oksengendler, S.E.Maksimov, N.Yu.Turaev. Possible mechanisms of sputtering under
bombardment by polyatomic ion beams (synergetic approach).
16. V.N.Samoilov, A.I.Musin. The peculiarities of distributions of overfocused atoms ejected
from (001) Ni with energy and angular resolution.
17. A.N.Sutygina, N.N.Nikitenkov, I.A.Shulepov, E.B.Kashkarov. Plasma immersion ion
implantation of aluminium into titanium.
14
Section 2. Ion scattering and propagation
1. J.S.Li, D.H.Zhang, H.H.Ao, M.M.Tian, Z.Feng, Ya.Q.Sun, S.Kodaira, N.Yasuda.
Fragmentation cross section of 800 A MeV silicon ions on polyethylene target.
2. A.Zugarramurdi, M.Debiossac, P.Lunca-Popa, A.Mayne, A.Momeni, A.G.Borisov, Z.
Mu, P.Roncin, H. Khemliche. Atomic and topographic corrugations of graphene on 6HSiC(0001) derived from Grazing Incidence Fast Atom Diffraction.
3. P.Yu.Babenko, A.N.Zinoviev, A.P.Shergin. Multiple scattering and inelastic energy loss in
ion-surface collisions.
4. I.K.Gainullin. 3D effects in resonant charge transfer between atomic particles and
nanosystems.
5. D.L.Zagorskiy, V.V.Korotkov, S.A.Bedin, D.A.Parfenov. Different track matrixes for
obtaining of nanomaterials by template synthesis.
6. A.N.Zinoviev, D.S.Meluzova. Potentials obtained from RBS measurements and electron
screening in nuclear synthesis reactions.
7. A.V.Ivanov. Scattering of charged particles on the chain of carbon atoms.
8. V.P.Koshcheev, Yu.N.Shtanov, D.A.Morgun, T.A.Panina. Atomic, electronic and nuclear
diffusion coefficient of channeled particles.
9. I.V.Lysova, A.N.Mikhailov. Energy characteristics of the atomic beam channeling in
nanotubes.
10. A.D.Mokrushin, E.V.Egorov, V.A.Smirnov. Analysis of oxide and reduced graphene films
by usage of backscattered ion beam.
11. A.N.Pustovit. The depth of the output for the sputtered particles at an inclined incidence of
the primary beam.
12. G.M.Filippov, V.A.Aleksandrov. Estimation of probability of porous formation at
multicharge ion incidence on the ultrathin film.
Section 3. Emission of ions, electrons, photons and X-rays under ionsurface interaction
1. B.G.Atabaev, R.Dzabbarganov, B.A.Ziyaev. The investigation of emission of negative-ion
clusters 3C-SiC under cesium Cs+ ion bombardment.
2. B.G.Atabaev, R.Dzabbarganov, B.A.Ziyaev. The effect of Se and Zn atoms dimerization
on (Ge2)1-x(ZnSe)x solid solution surface.
3. V.P.Afanas’ev, P.S.Kaplya. Invariant imbedding method. The small angle approximation
and the exact numerical solutions for electron spectroscopy analysis.
4. V.P.Afanas’ev, P.S.Kaplya, A.S.Gryazev, D.S.Efremenko, Y.O.Andreyeva. Differential
inverse inelastic mean free path reconstruction methods from electron energy loss (EELS),
photoemission (PES) and Auger spectra.
5. V.P.Afanas’ev, P.S.Kaplya, A.S.Gryazev, N.V.Lyapunov. Beryllium Be and tungsten W
photoemission spectra.
15
6. I.A.Afanas’eva, V.V.Bobkov, V.V.Gritsyna, I.S.Zelenina, I.I.Okseniuk, D.A.Ryzhov,
D.I.Shevchenko. On the mechanisms of sputtering of excited yttrium atoms under ion
bombardment of yttrium and yttrium-aluminum garnet.
7. P.A.Borisovsky, E.N.Moos, A.I.Rudenko, Ja.P.Rusakova. Crystalline state features of
quasi two-dimensional graphite layers.
8. A.F.Vladimirov. Simulation of the external electric field on the charge and energy state of an
atom, leaving the surface of a solid.
9. S.S.Volkov, T.I.Kitaeva. Analytical features of SIMS in the study of the composition of
quartz concentrates.
10. O.L.Golubev, N.M.Blashenkov. About the effect of isotope mass of evaporated ion on a
field evaporation of ions at high temperatures of an emitter.
11. I.A.Zeltser, E.N.Moos, O.V.Savushkin. Energy dispersion dependences of true secondary
electrons after implantation.
12. S.Parviainen, F.Djurabekova, S.P.Fitzgerald, A.Ruzibaev and K.Nordlund. Atom Probe
Tomography by atomistic simulations.
13. O.A.Koval’, I.V.Vizgalov. The use of auto-oscillating beam-plasma discharge for ion
implantaing in the dust particles.
14. V.A.Litvinov, D.I.Shevchenko, I.I.Okseniuk, V.V.Bobkov. The study of the surface of
alloy for hydrogen storage based on the magnesium by SIMS.
15. K.F.Minnebaev, A.A.Khaidarov, V.E.Yurasova. Temperature dependence of secondary ion
emission from copper single crystal.
16. S.N.Morozov, U.Kh.Rasulev. Secondary ion emission of GaAs single crystal under
bombardment by Bim+ cluster projectiles.
17. S.N.Morozov. Secondary ion, ion-electron and ion-photon emission under bombardment of
yttrium by Bim+ cluster projectiles.
18. N.A.Nurmatov, Y.S.Ergashov, N.Talipov, Kh.M.Sattorov, I.Kh.Khamidjonov. Study the
electronic structure of alloys based on Nb-Zr at transition in intermetallic compounds.
19. E.I.Rau, A.A.Tatarintsev, V.V.Khvostov , В.Е.Юрасова. Secondary electronic, emission
and charge characteristics of ion-irradiated sapphire.
20. A.A.Tishchenko, D.Yu.Sergeeva and M.N.Strikhanov. Properties of polarization radiation
from charged particles beam brushing surface of a solid.
21. Yu.I.Tyurin, S.Kh.Shigalugov, V.D.Khoruzhii, V.P.Grankin, A.S.Dolgov, Van Yaomin.
Luminescence from willemite Zn2SiO4–Mn surface under О, Н, О+Н atomic beams.
21 August, Friday
Section 4. Ion implantation and surface modification
1. N.D.Abrosimova, D.Yu.Zudin. Influence of hydrogen implantation mode on geometrical
parameters of silicon-on-insulator structures.
2. A.V.Alekseev, G.G.Gumarov, V.A.Shustov, V.Yu.Petukhov, V.I.Nuzdin. Investigation of
magnetic uniaxial anisotropy at ion-beam synthesis of iron silicides.
3. D.Bachiller-Perea, L.Thomé, A.Debelle. Damage processes in MgO irradiated with 1.2
MeV Auions and effect of irradiation temperature.
4. V.I.Bachurin, S.A.Krivelevich. Definition of order parameters for simulation of phase
formation in the double metal systems under ion bombardment conditions.
16
5. S.Biira, J.B.Malherbe, P.Crouse, J. van der Walt. The impact of substrate temperature on
the surface morphology and layer microstructure of ion-bombarded CVD polycrystalline
zirconium carbide thin films.
6. V.V.Bobkov, L.P.Tishchenko, R.I.Starovoitov, Yu.I.Kovtunenko, L.A.Gamayunova.
Implantation of deuterium and helium ions in deposited tungsten coatings during sequential
irradiation.
7. E.A.Bobrova,
A.V.Leonov,
V.N.Mordkovich,
A.P.Bibilashvili,
N.D.Dolidze,
K.D.Shcherbachev. Influence of chemical nature of implanted ions on a formation of
radiation defects in Si.
8. Yu.V.Borisyuk, N.M.Oreshnikova, M.A.Berdnikova, A.V.Tumarkin, G.V.Khodachenko,
A.A.Pisarev. Plasma nitriding of titanium alloy Ti5Al4V2Mo.
9. A.I.Vilensky, G.K.Sabbatovskii. Latent tracks of heavy ions in the polyethylenterephthalate.
10. R.A.Valikov, A.S.Yashin, B.A.Kalin, N.V.Volkov. Features of modification of the
cylindrical surface under argon radial beam impact with energies up to 5 keV.
11. V.V.Vorobev, Y.N.Osin, V.F.Valeev, V.I.Nuzhdin, A.L.Stepanov.
Structural changes and formation of porous in silicon during implantation with silver ions.
12. D.V.Guseinov, S.A.Denisov, A.V.Nezhdanov, I.N.Antonov, D.I.Tetel’baum, P.A.Yunin,
V.N.Trushin, D.O.Filatov, M.V.Stepikhovа, Z.F.Krasil’nik, V.G.Shengurov. P+ ions
irradiation of Ge layers on Si(100) for light emitting devices.
13. V.I.Zinenko, Yu.Agafonov, V.V.Saraykin. The redistribution of iron atoms implanted in
silicon by irradiation with helium ions.
14. A.E.Ieshkin, V.S.Chsernysh, Yu.A.Ermakov, A.V.Molchanov, A.E.Serebryakov,
M.V.Chirkin. High smoothing of glass-ceramic surface with gas cluster ion beam.
15. T.S.Kavetskyy, Y.Y.Kukhazh, J.Borc, A.L.Stepanov. Nanoindentation of boron-ion
implanted polymethylmethacrylate up to 1100 nm indentation depth.
16. T.S.Kavetskyy, A.L.Stepanov. Spectroscopic investigations of ion-induced processes in
polymethylmethacrylate at low-energy boron-ion implantation.
17. K.V.Karabeshkin, P.A.Karaseov, A.I.Titov. Crystal lattice damage formation in silicon
during PFn+ ion implantation: part II.
18. F.F.Komarov, O.V.Milchanin, V.A.Skuratov, M.A.Makhavikou, A.Janse van Vuuren,
J.N.Neethling, E.Wendler, L.A.Vlasukova, I.N.Parkhomenko, V.N.Yuvchenko.
Ion-beam formation and track modification of InAs nanoclusters in silicon and silicon
dioxide.
19. V.S.Kovivchak, T.V.Panova. Modification of polycrystalline metal oxides by high power
ion beam.
20. S.A.Krivelevich, V.I.Bachurin. Waves changeover and ion induced phase transitions in the
double metal system.
21. F.N.Mikhailov. Optimization of parameters in the self-assembly LCC, molecular dynamics
force field «ReaxFF».
22. S.J.Nimatov, D.S.Rumi. Modification of the Si(111) surface under the low energy of the
alkali ion bombardment.
23. O.S.Odutemowo, J.B.Malherbe, C.C.Theron, E.G.Njoroge, E.Wendler. In-situ RBS
studies of strontium implanted glassy carbon.
24. B.L.Oksengendler, F.G.Djurabekova, S.E.Maksimov. Features of ion sputtering of
nanocrystals and instability zone of defects.
17
25. V.V.Poplavsky, A.V.Dorozhko, V.G.Matys. Ion beam formation of electrocatalysts for fuel
cells with polymer membrane electrolyte.
26. V.S.Prosolovich, D.I.Brinkevich, V.B.Odzhaev, A.I.Prostomolotov, Y.N.Yankovski. Ioninduced processes on the surface of the naphthoquinondiazide-novolac resist.
27. V.I.Pryakhina, D.O.Alikin, I.S.Palitsin, S.A.Negashev and V.Ya.Shur. Influence of Ar+
ion irradiation on formation of domain structure in LiNbO3 during polarization reversal.
28. V.I.Psarev, L.A.Parkhomenko. Dissolution and nucleation of disperse precipitation an ionirradiated alloys.
29. A.V.Rogov, Yu.V.Kapustin, Yu.V.Martynenko. Defectiveness reduction of the
nanocrystalline coatings deposited on the polycrystalline substrates after preliminary ion
sputtering with simultaneous deposition.
30. M.K.Ruzibaeva, B.E.Umirzakov. Study of the profile of distribution of the implanted
impurity at high irradiation doses.
31. A.S.Rysbaev, J.B.Khujaniyazov, I.R.Bekpulatov, R.F.Fayzullayev, Sh.A.Talipova. The
thermosensitive structure created by implantation ionic Р + and B+ in Si (111).
32. A.S.Rysbaev, J.B.Khujaniyazov, I.R.Bekpulatov, A.M.Rakhimov. Way of additional
clearing of a surface of monocrystals of silicon.
33. A.S.Rysbaev, J.B.Khujaniyazov, I.R.Bekpulatov, R.F.Fayzullayev. Influence thermal and
laser annealing on superficial properties and profiles of distribution of atoms Р and B,
implanted in Si (111).
34. A.A.Smirnov, S.I.Bozhko, A.M.Ionov, S.G.Protasova, S.V.Chekmazov, A.A.Kapustin. Sb
(111): surface evolution under ion etching.
35. B.E.Umirzakov, S.J.Nimatov, H.H.Boltaev, B.D.Donaev. Investigation of the depth
distribution profile of atoms in the multilayer system based on silicon.
36. B.F.Farrakhov, Ya.V.Fattakhov, M.F.Galyautdinov. Dynamic thermometry of a solid based
on combination of optical diffraction and interference methods.
37. C.Herbig, E.H.Åhlgren, W.Jolie, C.Busse, J.Kotakoski, A.V.Krasheninnikov, T.Michely.
Low energy ion irradiation of supported 2D layers and their annealing.
38. T.T.Hlatshwayo, J.B.Malherbe, N.G. van der Berg, R.J.Kuhudzai, E.Wendler. Diffusion
of silver in bombardment-induced amorphous SiC.
39. I.P.Chernov, E.V.Berezneeva, N.S.Pushilina, P.A.Beloglazova. Modification of zirconium
alloy by pulsed particle beams.
40. V.V.Chirkov,
G.G.Gumarov,
V.Yu.Petukhov,
V.F.Valeev,
Magnetopolarimetric investigation of ion-beam-synthesized Co-silicide films.
A.E.Denisov.
41. A.A.Shemukhin, A.V.Nazarov, Yu.V.Balaksin, V.S.Chernysh. Defect formation and
recrystallization in the silicon-on-sapphire films under Si+ irradiation.
42. A.G.Shirokova, E.A.Bogdanova, V.M.Skachkov, L.A.Pasechnik,
N.A. Sabirzyanov. Creation of bioactive implants by different methods.
S.V.Borisov,
43. K.D.Shcherbachev, E.A.Skryleva, D.A.Kiselev. Influence of a chemical activity of
implanted ions on a structure of a damaged Si surface of SIMOX substrates.
44. K.B.Eidelman, N.Yu.Tabachkova, K.D.Shcherbachev, V.V.Privezentsev. Modification of
ion-beam synthesized Zn nanoparticles in Si (001) by subsequent annealing.
45. Y.S.Ergashov, D.A.Tashmukhamedova, F.G.Djurabekova, B.E.Umirzakov. Influence of
microroughnesses of the surface on composition and electron properties of CdTe/Mo (111)
films.
18
46. M.B.Yusupjanova,
D.A.Tashmukhamedova, M.T.Normuradov, B.E.Umirzakov.
Investigating of processes of creation nanodimensional structures in SiO2 films at ion
bombardment.
Section 5. Ion-assisted processes in thin films and nanostructures
1. M.Yu.Barabanenkov,
A.I.Il'in,
V.T.Volkov,
Yu.A.Agafonov,
V.I.Zinenko,
A.A.Podkopaev. Annealing stage modelling of low energy ion beam synthesis of
submicrometer periodical silicon oxide pillars in silicon.
2. A.L.Bondareva, G.I.Zmievskaya. Stochastic simulation of pores formation in thin layer of
silicon carbide.
3. L.A.Vlasukova, F.F.Komarov, V.N.Yuvchenko, O.V.Mil’chanin,А.K. Dauletbekova,
A.E.Al’zanova, A.T.Akilbekov. Etching of latent track in amorphous SiO2 and Si3N4:
simulation and experiment.
4. N.V.Volkov, T.V.Yakutkina, I.V.Oleynikov, N.V.Sysoeva. Dynamic patterns of ion mixing
in multilayer film systems under irradiation by ion beams with a wide energy spectrum.
5. A.A.Dmitrievskiy, D.G.Guseva, V.M.Vasyukov, V.V.Korenkov, A.V.Shuklinov. Decrease
in AlN/Si-structure adhesion induced by low-flux of beta-irradiation.
6. S.B.Donaev, E.Rabbimov, A.K.Tashatov, D.A.Tashmuhamedova. Formations threecomponental nanofilms on surface GaAs at bombardment by low-energy Na+ and Al+ ions.
7. V.S.Efimov, Yu.M.Gasparyan, A.A.Pisarev, I.B.Kupriyanov. Investigation of deuterium
retention in beryllium under high flux pulsed plasma irradiation.
8. A.F.Zatsepin, E.A.Buntov, A.I.Slesarev. Ionization effects in implanted SiO2/Si
structures under high-energy α-particles impact.
9. G.I.Zmievskaya, A.L.Bondareva. Damage of silicon carbide thin film due to vacancygaseous defects.
10. E.B.Kashkarov, N.N.Nikitenkov, Yu.I.Tyurin, M.S.Syrtanov, Zhang Le. Influence of
pulsed bias on structure and element distribution in titanium nitride thin film deposited by arc
ion plating.
11. D.V.Kolodko, D.N.Sinelnikov, A.V.Kaziev, A.V.Tumarkin. Metal-ion Penning source for
thin films deposition.
12. D.S.Korolev, A.N.Mikhaylov, A.I.Belov, V.A.Sergeev, I.N.Antonov, O.N.Gorshkov,
A.P.Kasatkin, D.I.Tetelbaum. Effect of ion irradiation on resistive switching parameters of
silicon-oxide-based MIM structures.
13. E.G.Njoroge, C. C. Theron, J.B.Malherbe, N.G. van der Berg and T.T.Hlatshwayo.
Surface and interface effects of annealing Zr thin films on 6H-SiC in vacuum.
14. R.V.Selyukov, V.V.Naumov, I.I.Amirov. Changes of platinum film texture caused by
ion-plasma treatment.
15. N.A.Smolanov. Integrated research microparticle deposition from arc discharge plasma on
the wall of the vacuum chamber.
16. A.S.Sohatsky, K.A.Kornieieva, J.OʼConnel, V.A.Skuratov, A.A.Nikitina, J. Neethling.
Effect of the steel sample preparation technique on the quality of structure investigation by
transmission electron microscopy.
19
17. A.V.Stepanov. Influence of carbon nanotube’s elastic perturbation on slow atomic particles
channeling: first principles calculation.
18. A.V.Stepanov. Channeling of particles in carbon nanotubes heterostructures with defects.
19. S.V.Tomilin, A.S.Yanovsky, V.N.Berghansky, А.N.Shaposhnikov, О.А.Tomilina. Ionfield processes in island metallic nanofilms.
20. V.V.Uglov, G.Abadias, N.T.Kvasov, S.V.Zlotski, I.A.Saladukhin, V.I.Shymanski. Ioninduced processes in thin multilayer films based on zirconium and silicon nitrides irradiated
with xenon ions.
22 August, Sunday
Section 6. Plasma-surface interaction - physics and technology
1. A.V.Filimonov, N.V.Andreeva, E.Y.Koroleva. Low temperature surface modification of
potassium tantalate doped with lithium ions by means of piezoresponse force microscopy.
2. A.A.Airapetov, L.B.Begrambekov, Ya.A.Sadovskiy. Gasification and removal redeposited
carbon layers from plasma devices by interaction with oxygen-ozone mixture.
3. I.I.Amirov, M.O.Izyumov, V.V.Naumov. Selective low energy sputtering of metal films in
the density argon plasma with additive of oxygen.
4. V.V.Andreev, L.A.Vasilyeva. Investigation of dielectric barrier discharge in a cell with
periodic arrangement of metal strips- electrodes which are disposed in the depth of dielectric.
5. V.N.Arustamov, K.B.Ashurov, I.Kh.Khudaykulov, B.R.Kahramonov. On the issue of
plasma flow generation by vacuum arc discharge and coating deposition.
6. V.N.Arustamov, K.B.Ashurov, I.Kh.Khudaykulov, B.R.Kahramonov. On the issue of
structural transformations of constructional material surface under vacuum arc action.
7. V.N.Arustamov, K.B.Ashurov, R.B.Nagaibecov, I.Kh.Khudaykulov, B.R.Kahramonov.
Simulation of field amplification processes on cathode microasperities under vacuum arc
discharge.
8. V.N.Arustamov, K.B.Ashurov, I.Kh.Khudaykulov, B.R.Kahramonov. Special features of
ion ionization in cathode spots of vacuum arc discharge.
9. V.N. Arustamov, K.B. Ashurov, I.Kh. Khudaykulov, B.R Kahramonov. The electric field
role in cathode spot formation by vacuum arc discharge.
10. V.N. Arustamov, K.B. Ashurov, I.Kh. Khudaykulov, B.R. Kahramonov. Thin film
formation in deposition from vacuum arc discharge plasma.
11. A.A.Barat, D.D.Grigoryan, V.V.Manukhin. Design procedure of energy spectra of physical
sputtering in engineering material interacting with plasma.
12. A.A.Batrakov,
A.V.Ryzhenkov,
O.S.Zilova,
G.V.Kachalin,
A.A.Burmistrov,
A.P.Lepekhov. Depth profiling protective coating titanium nitride based on glow discharge
optical emission spectrometry.
13. N.N.Bozhko, V.P.Stolyarov, F.A.Doronin, V.G.Nazarov.
treatment of polymeric films.
Plasma-chemical surface
14. G.G.Bondarenko, V.I.Kristya, M.R.Fisher. Modeling of the effect of field electron
emission from the cathode with a thin dielectric film on the Townsend discharge ignition
voltage in argon–mercury mixture.
20
15. A.M.Borisov, V.G.Vostrikov, A.V.Vinogradov, B.L.Krit, V.B.Lydin, M.N.Polyansky,
S.V.Savushkina, N.V.Tkachenko. The study of plasma electrolytic oxidation coatings on Zr
and Zr-1% Nb alloy.
16. L.I.Bryukvina, S.V.Lipko. Influence of plasma in femtosecond laser pulses focus on the
morphology of near-surface layer of alkali fluorides.
17. A.G.Gorobchuk. Numerical investigation of silicon surface polymerization in CF4/H2
plasma.
18. D.V.Grankin, A.I.Bazhin, V.P.Grankin. Electronic excitation of a surface by atoms of the
hydrogen plasma in the presence of UV radiation.
19. A.E.Evsin, L.B.Begrambekov, A.A.Gordeev. Plasma methods of formation of surface
layers on zirconium for mitigation of hydrogen penetration.
20. V.K.Egorov, E.V.Egorov, M.S.Afanas’ev. Total X-ray fluorescence analysis in conditions
of ion beam excitation.
21. M.Zibrov, Yu.Gasparyan, A.Shubina, and A.Pisarev. Determination of hydrogen binding
energies with defects in metals from thermal desorption measurements with different heating
rates.
22. S.P.Zimin, I.I.Amirov, E.S.Gorlachev, V.V.Naumov, E.Abramof, P.H.O.Rappl. Plasma
sputtering of Pb1−xEuxTe films with varied composition and structure.
23. S.V.Ivanova, L.N.Lesnevskiy, M.A.Lyakhovetskiy, O.A.Nagovitsina. Structure and
properties of surface layers forming on zirconium alloys using microarc oxidation method.
24. A.I.Kamardin, R.Kh.Saidahmedov, G.A.Khamraeva. Use of magnetrons with the hot
cathode for decorative coats.
25. E.S.Kiselyova, N.N.Nikitenkov, V.S.Sypchenko. Study of the composition, optical
properties of the coating based on titanium dioxide deposited by reactive magnetron
sputtering.
26. V.I.Kristya, Ye Naing Tun. Calculation of sputtering characteristics of the cathode with a
dielectric fifm of non-uniform thickness in glow discharge.
27. K.I.Kruglov, V.К.Abgaryan, Kh.Leb. Numerical simulation of structural units heating for
ion sources with radio-frequency plasma discharge heating.
28. E.Marenkov, S.Krasheninnikov. Ablation of high-Z material dust grains in edge plasmas.
29. E.Meshcheryakova, M.Zibrov, A.Kaziev, G.Khodachenko, A.Pisarev. Characterisation of
plasma parameters of inductively-coupled plasma source and its application for nitriding of
steels.
30. A.B.Nadiradze, R.R.Rahmatullin, S.V.Urnov. Formation relief on the surface of
borosilicate glasses under xenon plasma at glazing incidence.
31. L.S.Novikov,
E.N.Voronina,
V.N.Chernik,
E.A.Vorobieva,
A.V.Makunin,
K.B. Vernigorov, K.S.Yakovlev, M.Yu.Yablokova. Erosion of CNT-based polymer
nanocomposites exposed to oxygen plasma.
32. L.S.Novikov, E.N.Voronina, V.N.Chernik, L.A.Zhilyakov. Change in properties of
polyimide films as a result of combined irradiation with protons and oxygen plasma.
33. F.S.Podolyako, I.A.Sorokin, K.M.Gutorov, I.V.Vizgalov, E.G.Shustin. Formation of
monoenergetic ion flux from the plasma to the dielectric sample.
34. A.S.Popkov, S.A.Krat, Yu.M.Gasparyan, A.A.Pisarev. Interaction of lithum-deuterium
films with atmospheric gases.
21
35. A.A.Pshenov, A.A.Eksaeva, S.I.Krasheninnikov, E.D.Marenkov. Vapour shielding of
solid targets exposed to high heat flux.
36. T.D.Radjabov, A.M.Nazarov, S.V.Koveshnikov.
polycrystalline silicon for solar cells.
The
purification
methods
of
37. T.D.Radjabov, A.I.Kamardin, A.A.Simonov, Z.T.Khakimov. Ion assisted deposition of the
multilayer metal coats.
38. B.K.Rakhadilov, T.R.Tulenbergenov, I.A.Sokolov, D.A.Ganovichev. Research of steadystate plasma interaction with tungsten.
39. R.I.Romanov, S.N.Grigoriev, V.Yu.Fominski, M.A.Volosova. Regulation of ion
bombardment parameters for preparation of low-friction coatings with improved properties.
40. А.Savchenkov, K.Gubskiy, А.Kuznetsov, E.Nikitina, S.Tugarinov, О.Buzhinskij. The
system of laser cleaning of mirror surface for optical diagnostic systems of the ITER.
41. I.A.Sorokin, I.V.Vizgalov, O.A.Bidlevich. Analysis of ion fluxes in linear plasma devices.
42. M.A.Stepovich, M.N. Shipko, V.G. Kostishin, V.V. Korovushkin. Ion-induced processes
in the corona discharge superdispersive magnetite particles.
43. N.N.Cherenda,
A.P.Laskovnev,
A.V.Basalai,
V.V.Uglov,
V.M.Astashynski,
A.M. Kuzmitski. Structural and phase transformations in bronze alloyed by titanium atoms
under the action of compression plasma flows.
44. V.I.Shymanski, N.N.Cherenda, V.V.Uglov, V.M.Astashynski, A.M.Kuzmitski.
Modification of structure and phase composition of Nb/Ti system by compression plasma
flows.
45. M.N.Shipko, V.G.Kostishin, M.A.Stepovich, V.V.Korovushkin. Modification of properties
of ferrite materials with the hexagonal structure by treatment in corona discharge plasma.
22