Graphene: New Facets in Ultra-Flat Nanoelectronics
Arindam Ghosh
Associate Professor, Department of Physics
Indian Institute of Science, Bangalore, India
Since the emergence of graphene, the field of nanoelectronics has been undergoing a paradigm shift.
This reflects in building electronic elements on a platform of new materials that come with an intrinsic
atomic confinement.
The most notable of this is graphene, but other examples include molybdenum disulphide, topological
insulators such as bismuth selenide/teluride, and so on. The atomic or molecular scale confinement in
many of these materials can be realized with simple techniques like mechanical exfoliation, which has
triggered a new design of field-effect transistors that offer not only speed and efficiency, but also novel
concepts in fundamental science and device applications.
I shall discuss some of the outstanding challenges and possibilities in this new era of nanoelectronics.
This will consist of evaluating the impact of extraneous factors, such as the substrate and the charge
environment on limiting the performance of atomically thin field effect transistors both in terms of
carrier mobility and low-frequency noise.
In the context of fundamental physics, I shall highlight some new quantum effects, connected to valleys
in graphene, that illustrate the enhanced functionality of ultra-flat nanoelectronics over that based on
conventional two-dimensional electron systems.
1.
"Graphene and the revolution in nanoscale electronics", Arindam Ghosh, Physics News (Bulletin of Indian
Physics Association) 41, 44–50 (2011).
2.
"Microscopic mechanism of 1/f noise in graphene: Role of energy band dispersion", Atindra Nath Pal,
Subhamoy Ghatak, Vidya Kochat, Sneha E. S., Arjun B. S., Srinivasan Raghavan and Arindam Ghosh, ACS
Nano 5, 2075–2081 (2011).
3.
"Large low-frequency resistance noise in chemical vapor deposited graphene", Atindra Nath Pal, Ageeth A.
Bol and Arindam Ghosh, Applied Physics Letters 97, 133504 (2010).
4.
"Design of a cryogenic amplifier using GaAs MESFET", Koushik R. and Arindam Ghosh, Indian Journal of
Cryogenics 35, 391 (2010).
5.
"Ultra-low noise field-effect transistor from multilayer graphene", Atindra Nath Pal and Arindam Ghosh,
Applied Physics Letters 95, 082105 (2009)
6.
“Resistance noise in electrically biased bilayer graphene", Atindra Nath Pal and Arindam Ghosh, Physical
Review Letters 102, 126805 (2009).
Arindam Ghosh
Associate Professor
Department of Physics, Indian Institute of Science
Bangalore 560012, India.
Tel: +91 (0)80 2293 3288
Fax: +91 (0)80 2360 2602
Email: arindam@physics.iisc.ernet.in
Website: http://www.physics.iisc.ernet.in/~arindam/people/Arindam_Journal.htm
Arindam Ghosh is an experimental physicist with research
interest extending over several fields in classical and quantum
solid state physics. He completed his PhD research from the
Indian Institute of Science in 2000, where he investigated the
effect of Coulomb interaction on the electrical properties of
semiconductor and metals close to metal-insulator transition.
Following his PhD, Dr Ghosh held the position of Research
Associate at the Cavendish Laboratory, University of
Cambridge, until Nov 2005. During this period his research activities expanded to
semiconductor nanostructures, effects of Coulomb interaction in mesoscopic systems, and
spontaneous spin effects in semiconductors. At the Indian Institute of Science, Bangalore, Dr.
Ghosh’s areas of research include nanoelectronics with carbon and metallic nanosystems,
quantum information processing with semiconductor nanostructures, and sensing with micro
and nano-electromechanical devices.
Dr. Ghosh has published over 50 papers, and in 2005 was registered by Engineering and
Physical Sciences Research Council (EPSRC), UK as a recognized researcher. He also received the
UK-India Education and Research Initiative Award in 2006, the IBM Nanotechnology Fellowship
in 2008, the Swarnajayanti Fellowship from the Government of India in 2009, and the Materials
Research Society of India (MRSI) medal in 2012.