Low-temperature growth and optical properties of ZnO nanorods on platinum substrate M. A. Bakar 1, M. A. A. Hamid1*, A. Jalar2, R. Shamsudin1 School of Applied Physics, Faculty of Sciences and Technology 2 Institute of Microengineering and Nanoelectronics Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor D. E., Malaysia. *Corresponding author email: azmi@ukm.my 1 Abstract A simple solution route employing the reaction of zinc nitrate hexahydrate (Zn(NO3)2·6H20) and hexamethylenetetramine (C6H12N4) has been demonstrated to successfully grown aligned hexagonal rod of ZnO on platinum substrate. The general morphological observations revealed that the distributed uniform hexagonal rods have obtained on the platinum substrate surface from 1.5 h to 3 h growth time. Sharper and higher intensity of XRD peaks was observed for ZnO thin film deposit at 3 hour compared to 1.5 hour growth time. EDX has confirmed the pure ZnO has obtained due to only Zn and O present in the sample. The optical band gap for ZnO thin film deposited for 3 h is 3.30 eV which is slightly near to the bulk value of ZnO, 3.37 eV. This result present that the platinum substrate has influence of ordering an array hexagonal rods of ZnO. Keywords: Thin film; Platinum substrate; Zinc oxide; Aqueous chemical growth; Uniform hexagonal rods 1. Introduction With a direct bandgap of 3.37 eV at room temperature and a large exciting binding energy of 60 meV which is higher than thermal energy at room temperature, 27 meV [1], Zinc oxide (ZnO) has been recognized as a promising semiconductor material for electronic and optoelectronic devices. Various synthesis methods have been used to fabricate ZnO nanostructures such as thermal evaporation [2], molecular beam epitaxy (MBE) [3], chemical spray pyrolysis [4], chemical vapor deposition (CVD) [5], etc. These growth techniques are complicated and require high temperature growth conditions. However, the chemical solution route has become a promising approach for the large scale production of nano/microscale materials because of it is less expensive, simple, fast, and requires a low growth temperature [6]. In addition, the solution growth method can produce quality nanostructures without using a metal catalyst with higher crystal quality [7]. In order to avoids oxidation and corrosion of metallic substrates, low temperature deposition is used. Up to now, aqueous chemical growth (ACG) approaches have gained in importance because of cost efficient and low temperature growth technique. Postels et al. 2007 reported that ACG process is based on a nucleation step followed by growth of ZnO nanorods in aqueous solution at temperatures below 95ºC [8]. A lot of factors playing role for the ZnO nanorods growth such as concentration of the aqueous solution [9-12], pH [13, 14], temperature [15] etc., that affect the final morphology of the grown ZnO. Herein, we focus on the controllable fabrication of ZnO nanorods aligned on platinum substrate without seed layer from 1.5 h to 3 h growth time process by aqueous chemical growth. It is well known that types of substrates also have a great influence on the morphology of the ZnO structures. Moreover, growth of ZnO on platinum substrate has the great advantage of the integration of the devices. In past decades, platinum has gained special attention due to its high electrical conductivity, chemically inert [16], and stable and hard to oxidize [17]. There are reports on ZnO nanostructures grown directly onto conducting metal substrates such as Zn foil [18], Al [19] and copper [20]. One of the advantages of growing ZnO directly onto a metal substrate is the formation of robust electrical contact during growth. The effect of using platinum substrate on surface morphology and optical properties of ZnO thin films were investigated. The ZnO films were characterized by X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM) equipped with Energy Dispersive X-rays (EDX) for their structural and surface morphology while the optical measurements was carried out using UV-vis spectrometer. Our results provide clues on the role of the formation of the array ZnO hexagonal rods. 2. Materials and methods ZnO structures were grown by the aqueous chemical growth method on Pt substrate using an equimolar (0.05 M) aqueous solution of zinc nitrate hexahydrate (Zn(NO3)2.6H2O) and hexamethylenetetramine (C6H12N4) dissolved in the deionized water. The mixed solution was magnetically stirred until complete dissolution for one hour. The glass substrates used in the experiment were cleaned with acetone and ethanol followed by ultrasonic cleaning in deionized water for 15 min. The cleaned glass substrates were then coated with platinum, before being immersed in the prepared solution. The substrates were then immersed in the prepared solution and heated at 90 ºC for different growth time; 1.5 h, 2 h, 2.5 h and 3 h in an oven without any stirring. Subsequently, the samples were removed and washed thoroughly with deionized water to eliminate any residual salts and were then dried in air. The samples were analyzed using field emission scanning electron microscopy (FESEM) to determine the morphology of the ZnO nanostructures. The phase composition and crystal structure were determined by X-ray diffraction (XRD) while the element composition of the zinc oxide nanostructures was examined using energy dispersive X-ray spectroscopy (EDX). 3. Result and discussion Morphology and microstructure of the prepared ZnO were determined by using FESEM. Fig.1 shows the typical FESEM images of ZnO nanostructures at different growth time. The 50 kx-magnification of FESEM image in Fig. 1(a) shows the morphology of ZnO grown at 90 ºC for 1.5 h. It was observed that uniform distribution of ZnO nanorods on the substrate surface. The nanorods size increase when increasing the growth time. This is because of “Ostwald ripening” reported by Krichevsky and Stavans [21]. The diameter of the nanorods from 1.5 h to 3 h is between 0.1-0.2 µm. The length increases with the growth time from 1-2 µm for 1.5 h and become 1-4 µm for 3 h growth time. Fig. 1. 50 kx-magnification FESEM images of the ZnO nanorods grown on Pt coated glass substrate at different growth time: (a) 1.5 h; (b) 2 h; (c) 2.5 h and (d) 3 h. Various synthesis methods have been successfully grown array ZnO nanorods structure on various types of substrates. However, the methods they used to obtain the array structure of ZnO require special experimental condition such as ZnO coated seed layer substrate [22] and long reaction time such as 12 hour [10,22]. Uekawa et al [23] reported that the ZnO rod arrays grow because of the decomposition of some soluble species of zinc hydroxide on the surface of ZnO seeds. The ZnO is a wurtzite structure and exhibits partial polar characteristics [24]. Tian et al. [25] reported that these wurtzite structure having a tendency to grow into rod-like structure. It is well known that the shape and size of inorganic nanostructures have much influence on their properties. In our experiment, ZnO nanostructures were formed in the weak acid condition. The pH value of solution decreased from 6.37 to 5.73 for 1.5 h h growth time and become 5.49 for 2 h and finally 5.25 for 3 h. Li et al. reported that the base concentration decreased because of evaporation of ammonia in the aqueous solution due to long hour experiment [26]. The decomposition in the aqueous solution can be expressed as follows [27]: C6H12N4+10H2O → 6HCHO+4NH3·H2O Zn2+ +4NH3·H2O → [Zn(NH3)4]2+ + 4H2O → Zn(OH)2+4NH4+ + 2OHZn(OH)2 → ZnO+H2O (1) (2) (3) In the weak acid condition of the aqueous solution, the hexamethylenetetramine (HMT) decomposed to aldehyde and ammonia (Eqn.(1)). To produce a large number of Zn2+ amino complexes in the solution, the ammonia combines with the Zn2+. The Zn2+ amino complexes were then hydrolyzed (Eqn.(2)) and Zn(OH)2 were formed, which subsequently formed ZnO nuclei on the substrate (Eqn.(3)); thus ZnO film grew from the nuclei. The energy dispersive X-ray spectrum (EDX) of ZnO grown on Pt substrate for 1.5 h, 2 h, 2.5 h and 3 h are shown in Fig. 2. The values of weight % for Zn increased with the increasing of growth time from 62.81 % for 1.5 h, 64.56 % for 2 h, and 71.93 % for 2.5 h and become 72.37 % for 3 h growth. The EDX spectrums show that only Zn and O atoms peaks were detected. The Pt peak observed is due to Pt substrate used in the experiment. No characteristic peaks from impurities were detected implying that the ZnO obtained were pure. Fig. 2. EDX spectra of ZnO grown on the Pt coated glass substrate for (a) 1.5 h; (b) 2 h; (c) 2.5 h and (b) 3 h. Futhermore, the crystallinity and crystal structures of the grown ZnO thin film were examined by X-ray diffraction (XRD) as shown in Fig. 3. The observed indexed peaks in this XRD pattern are fully matched with the corresponding pure wurtzite structures of ZnO with lattice parameter of a = 3.24982 Å and c = 5.20661 Å (JCPDS Card No. 36-1451). A few peaks existed at 2θ = 40° (111) and 2θ = 45° (200) corresponding to the Pt substrate used in the experiment. The peaks of Pt are clearly seen for 1.5 h and 2 h growth time. Notably, the relative peaks of the (100), (002) and (101) started to appear from 1.5 h growth time in Fig. 3(a) and become sharper and higher in intensity with the increasing the growth time. This implying that the ZnO thin film are well crystalline in Fig. 3 (d) compared to the peaks in Fig. 3(a). Yamada et al. 2004 has reported that the good crystallinity of ZnO obtained on Pt surface was due to small lattice mismatch between ZnO c-plane with Pt (111) plane is about 1.4 %. This is important in bulk acoustic resonator application which requires good electrical characteristics that depend on the crystallinity of ZnO thin film [17]. (100) (101) Intensity (a.u) (002) (d) 3 h (100) (c) 2.5 h Pt (111) (100) (101) Pt (111) Pt (200) (002) (b) 2 h 15 (101) (002) (a) 1.5 h 10 (110) (102) Pt (111) Pt (111) (100) 20 25 30 Pt (200) 35 40 45 50 55 60 2 Theta (deg) Fig. 3. X-ray diffraction patterns of ZnO thin film grown on platinum substrate for: (a) 1.5 h; (b) 2 h; (c) 2.5 h and (d) 3 h. Fig. 4 shows the optical transmission spectra for ZnO thin film deposited on platinum substrate for 3 h.. The transmission value being around 55 % shows that the ZnO thin film has moderate transmission in UV region. The value of optical band gap can be calculated by extrapolating of the linear portion of ahv2 vs photon energy (hv) graph. The optical band gap for ZnO thin film was found to be 3.30 eV which slightly near to the bulk value of ZnO 3.37 eV. Fig.4 Optical transmission spectra and Plot of (αhν)2 vs. hν of the ZnO thin film on platinum substrate for 3 h. 4. Conclusions In summary, an aligned of hexagonal rods od ZnO have been successfully produced by aqueous chemical growth on platinum substrate without using any seed layer. Overall, array ZnO rods morphology is observed from 1.5 h to 3 h growth time, the only difference being the diameter and the length size of the rod structures. All of EDX spectrums show that only Zn and O atoms peaks were detected. The Pt peak observed is due to Pt substrate used in the experiment. The optical band gap for ZnO thin film deposited for 3 h is 3.30 eV which is slightly near to the bulk value of ZnO, 3.37 eV. This result present that the platinum substrate has influence on the morphology and ordering of array hexagonal rods of ZnO. Acknowledgement The authors acknowledge the financial support from the research grant, UKM-RRR1-07FRGS0257-2010. Refrences [1] [2] [3] M.C. Jeong, B.Y. Oh, W. Lee, J.M. Myoung, J. Crystal Growth 268 (2004) 149154. N. Bouhssira, S. Abed, E. Tomasella, J. Cellier, A. Mosbah, M.S. Aida, M. Jacquet. Applied Surface Science 252 (2006) 5594–5597. L.C. Tien, D.P. Norton, S.J. Pearton, Hung-Ta Wang, F. Ren. Applied Surface Science 253 (2007) 4620–4625. [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] [20] [21] [22] [23] [24] [25] [26] [27] M. Krunks, A. Katerski, T. Dedova, I. O. Acik, A. Mere. Solar Energy Materials and Solar Cells 92 (2008) 1016– 1019. G.Z. Wang, N.G. Ma, C.J. Deng, P. Yu, C.Y. To, N.C. Hung, M. Aravind, Dickon H.L. Ng. Materials Letters 58 (2004) 2195–2198. L. Vayssieres, Adv. Mater. 15 (2005), p. 464-466. P. S. Kumar, A. D. Raj, D. Mangalaraj, D. Nataraj, Appl. Surf. Sci. 255 (2008) 2382–2387. B. Postels, M. Kreye, H.-H. Wehmann, A. Bakin, N. Boukos, A. Travlos, A. Waag. Superlattices and Microstructures 42 (2007) 425–430. X. Liu, Z. Jin, S. Bu, J. Zhao, Z. Liu. J. Am. Ceram. Soc. 89 (2006) 1226–1231. J. Yang, J. Lang, L. Yang, Y. Zhang, D. Wang, H. Fan, H. Liu, Y. Wang, M. Gao, J. Alloys Compds 450 (2008) 521-524. S. -F. Wang, T. –Y. Tseng, Y. –R. Wang, C. –Y. Wang, H. C. Lu, and W. –L. Shih. Int. J. Appl. Ceram. Technol., 5 [5] (2008) 419–429. F. Li, Z. Li, F. J. Jin. Materials Letters 61 (2007) 1876–1880. S. Baruah, J. Dutta. J. Crystal Growth 311 (2009) 2549-2554 D. Vernardou, G. Kenanakis, S. Couris, E. Koudoumas, E. Kymakis, N. Katsarakis, Thin Solid Films. 515 (2007) 8764–8767. S. S. -Guzman, B. RJayan, E. D. l. Rosa, A. T. –Castro, V. G. –Gonzalez, M. J. – Yacaman. Materials Chemistry and Physics 115 (2009) 172–178. R.-C. Lin, K.-S. Kao, C.-C. Cheng, Y.-C. Chen. Thin Solid Films 516 (2008) 5262– 5265. H. Yamada, Y. Ushimi, M. Takeuchi, Y. Yoshino, T. Makino, S. Arai. Vacuum 74 (2004) 689–692. C. Yan, D. Xue. Journal of Crystal Growth 310 (2008) 1836–1840. J.P. Cheng, Z.M. Liao, D. Shi, F. Liu, X.B. Zhang. Journal of Alloys and Compounds 480 (2009) 741–746. Wei Bai, Xia Zhu, Ziqiang Zhu, Junhao Chu. Applied Surface Science 254 (2008) 6483–6488. O. Krichevsky, J. Stavans. Physical Review Letters, 70 (10) (1993) pp. 1473-1476. D. Wu, M. Yang, Z. Huang, G. Yin, X. Liao, Y. Kang, X. Chen, H. Wang. Journal of Colloid and Interface Science 330 (2009) 380-385. N. Uekawa, R. Yamashita, Y. J. Wuand, K. Kakegawa. Phys. Chem. Chem. Phys. 6 (2004) 442-446. Z. L.Wang. J. Phys.: Condens. Matter 16 (2004) R829 – R858. Z. R. Tian, J. A. Voigt, J. Liu, B. Mckenzie, and M. J. Mcdermott. J. Am. Chem. Soc. 124 (2002), p. 12954-12955. Q. Li, V. Kumar, Y. Li, H. Zhang, T.J. Marks, R. P. H. Chang, Chem. Mater. 17 (5) (2005) 1001-1006. W.S.-Feng, J. Qing, L. J.-She. Trans. Nonferrous Met. Soc. China, 18 (2008) 10891093.