The Photopolymer Science and Technology Award
The Photopolymer Science and Technology Award No.052100, the Best Paper Award 2005, was
presented to Akira Kawai, Takayoshi Niiyama, Masahito Hirano, Makoto Sakata and Atsushi Ishikawa, all
from Nagaoka University of Technology, for their outstanding contribution published in Journal of
Photopolymer Science and Technology 17(3), 441-448 (2004), entitled “Cohesion Property of Resist Pattern
Surface Analyzed by Tip Indentation Method“, ibid., 17(3), 453-456 (2004), entitled “Interaction Force
Analysis of Resist Film Surface in Water Vapor”, ibid., 17(3), 457-460 (2004), entitled “Meniscus Analysis
in Micro Gap During Liquid Drying Process”, and ibid., 17(3), 461-464 (2004), entitled “Analysis for
Drying Behavior of Rinse Water Depended on Resist Pattern Arrangement”.
Akira Kawai
Akira Kawai is Associate Professor at Faculty of Engineering,
Nagaoka University of Technology. He received his B.S., M.S. and
Ph.D.(1994) degrees from Nagaoka University of Technology. From
1983 to 1994, he worked at LSI Laboratory, Mitsubishi Electric
Corporation. Past research has included bi-layer and tri-layer resists,
CEL, ARC, DUV hardening processes and adhesion improvement of
resist micro patterns. He also engaged the development of DRAM,
SRAM, EPROM and ASIC devices. His current research interests
include the development of analysis method of nanoscale
lithography with atomic force microscope (AFM), such as adhesion
and mechanical properties, condensation control of polymer
aggregates, nanoscale wetting, and adhesion analysis of nanoscale
bubbles for immersion lithography. He has about 100 publications
and holds about 100 Published patent applications (Japan patents) in
theJuergen
area ofIhlemann
microlithography
andPh.D.
surface
science.
He received
received his
degree
from University
of the
Progressive Award (1999) and the Best Paper Award (2003) from
the Adhesion Society of Japan
Takayoshi Niiyama is working for his Ph.D degree at graduate
school of Engineering in Nagaoka University of Technology. He
received his B.S. and M.S. degrees in Electrical Engineering from
Nagaoka University of Technology in 2003 and 2005, respectively.
His research M.S. was the control of interaction force acting between
solids in nanoscale for advanced lithography. His current research
interests are the development of analysis method of repulsive
interaction force in nanoscale gap with atomic force microscope
(AFM) and the development of advanced devices in nano and
microscale such as micro wetting systems.
Takayoshi Niiyama
Masahito Hirano received his B.S. degree in 2002 and his M.S.
degree in 2004 in Electrical Engineering from Nagaoka University of
Technology. In his master’s thesis, the meniscus interaction between
pure water and resist pattern in nano-scale is characterized by using
atomic force microscope. Now he is working at Shin-Etsu
Engineering Co., Ltd.
Masahito Hirano
Makoto Sakata received his B.S. degree in Electronic and
Electrical Engineering, Gunma University in 2002. During the study
for B.S. he was involved in carbon nanotube production by arc
discharge. In 2004, he received his M.S. degree from Nagaoka
University of Technology for research of photo lithography,
especially rinsing process of photoresist. Then he joined Hoshino
Kogyo Co., Ltd. in 2004. His current interests include product
development of various weavings which are used for seatbelt, airbag ,
etc.
Makoto Sakata
Atsushi Ishikawa received his B.S. and M.S. degrees in Electrical
Engineering from Nagaoka University of Technology in 2003 and
2005, respectively. And then he joined Mitsubishi Materials
Corporation. His study for M.S. was the elucidation of intrusion
mechanism of liquid into 180nm photoresist pattern. His research
included basic studies of nano-bubbles for the development of 193nm
immersion lithography.
Atsushi Ishikawa
With increase in density of semiconductor, the
minimum feature size of patterns has been scaled
down to below 100nm [1]. The development of
lithography and resist technology is accelerated to
meet the requirements. One of current topics of
lithography is immersion lithography [2]. Using
immersion lithography, 65nm to 45nm node
patterns can be fabricated with ArF (193nm)
exposure [3-6]. Other topic is extreme ultraviolet
(EUV) lithography, which adjusts for 32nm node
owing to very short exposure wavelength (13nm)
[7-9]. Along with these fabrication techniques,
fundamental technology is strongly needed to
understand essence of these techniques. It will lead
to the further development for lithography
technologies.
Authors have developed various analysis
methods of lithography with atomic force
microscope (AFM) and applied these to
understanding of lithography essence, such as
adhesion
and
mechanical
properties,
condensation control of polymer aggregates
and nanoscale wetting. Their group has been a
pioneering group for this novel technology.
Cohesion property of resist pattern surface was
analyzed. It was found that a certain hardened thin
layer is formed on the surface after resist pattern
development. These results are enhanced by the
various hardening processes such as electron beam
(EB) irradiation and thermal curing [10].
In various humidity conditions, the interaction
behavior between a resist film surface and an AFM
tip was characterized. The micro defect such as
resist fragment is attracted to the resist pattern in
vapor condition. Absorption of water to the resist
pattern influences the micro defect [11].
The drying process of the rinse water strongly
affects pattern collapse phenomena during resist
development. In order to analyze the water
meniscus behavior, a PET film is used as a parallel
pattern. With drying of water, an air tunnel is
formed and water divides to top area and bottom
area. Stress condensed in an air tunnel leads to a
pattern collapse [12].
The drying speed of rinse water depending on
pattern arrangement was analyzed. The rinse water
is more likely to remain at dot array patterns as
compared with line-and-space patterns. This is due
to pinning effect which causes liquid trap around
resist patterns [13].
These original research works are valuable for
fine pattern fabrication techniques of lithography
in terms of basic findings of state of resist surface
or rinse process. In other words, authors’
significant research results very contribute to
semiconductor
industry.
Their
important
researches have been presented at the annual
Conference of Photopolymer Science and
Technology and 27 issues of the papers have been
published in Journal of Photopolymer Science and
Technology. These contributions give the
fundamental aspects of lithography technologies
and open an advanced technology field of
nanoscale fabrication [10-36].
References
1. “International Technology Roadmap for
Semiconductors 2004 Update Lithography”,
http://www.itrs.net/Common/2004Update/2004_07
_Lithography.pdf (2004).
2. M. Rothschild, T. M. Bloomstein, R. R. Kunz,
V. Liberman, M. Switkes, S. T. Palmacci, J. H. C.
Sedlacek, D. Hardy, and A. Grenville, “Liquid
Immersion Lithography: Why, How, and When?”,
J. Vac. Sci. Technol. B, 22(6) (2004) 2877.
3. R. Dammel, F. M. Houlihan, R. Sakamuri, D.
Rentkiewicz and A. Romano, “193nm Immersion
Lithography - Taking The Plunge, J. Photopolym.
Sci. Technol., 17(4) (2004) 587.
4. S. Owa and H. Nagasaka, “Immersion
Lithography; Its Potential Performance and Issues”,
Proc. SPIE, 5040 (2003) 724.
5. B. Streefkerk, J. Baselmans, W. Gehoel-van
Ansem, J. Mulkens, C. Hoogendam, M.
Hoogendorp, D. Flagello, H. Sewell and P.
Graeupner, “Extend Optical Lithography with
Immersion”, Proc. SPIE, 5377 (2004) 285.
6. T. Honda, Y. Kishikawa, T. Tokita, H. Ohsawa,
M. Kawashima, A. Ohkubo, M. Yoshii, K. Uda
and A. Suzuki, “ArF Immersion Lithography:
Critical Optical Issues”, Proc. SPIE, 5377 (2004)
319.
7. P. P. Naulleau, K. A. Goldberg, E. Anderson, J.
P. Cain, P. Denham, K. Jackson, A.-S. Morlens, S.
Rekawa, and F. Salmassi, “Extreme Ultraviolet
Microexposures at the Advanced Light Source
using the 0.3 Numerical Aperture Micro-exposure
Tool Optic”, J. Vac. Sci. Technol. B, 22(6)
(2004) 2962.
8. T. Oshino, S. Takahashi, T. Yamamoto, T.
Miyoshi, M. Shiraishi, T. Komiya, N. Kandaka, H.
Kondo, K. Mashima, K. Nomura, K. Murakami, T.
Okuyama, H. Oizumi, I. Nishiyama, and S.
Okazaki, “Development of Projection Optics Set-3
for High-Numerical-Aperture Extreme Ultraviolet
Exposure Tool (HiNA)”, J. Vac. Sci. Technol. B,
22(6) (2004) 2975.
9. A. Brunton, J. Cashmore, P. Elbourn, G. Elliner,
M. Gower, P. Grünewald, M. Harman, S. Hough,
N. McEntee, S. Mundair, D. Rees, P. Richards, V.
Truffert, I. Wallhead and M. Whitfield,
“High-resolution EUV Microstepper Tool for
Resist Testing & Technology Evaluation, Proc.
SPIE, 5374 (2004) 869.
10. A. Kawai, “Cohesion Property of Resist
Pattern Surface Analyzed by Tip Indentation
Method“, J. Photopolym. Sci. Technol., 17(3)
(2004) 441.
11. T. Niiiyama and A. Kawai, “Interaction Force
Analysis of Resist Film Surface in Water Vapor”,
J. Photopolym. Sci. Technol., 17(3) (2004) 453.
12. A. Ishikawa, M. Sakata and A. Kawai,
“Meniscus Analysis in Micro Gap During Liquid
Drying
Process”,
J.
Photopolym.
Sci.
Technol.,17(3) (2004) 457.
13. A. Kawai, M. Hirano and T. Niiyama,
“Analysis for Drying Behavior of Rinse Water
Depended on Resist Pattern Arrangement”, J.
Photopolym. Sci. Technol.,17(3) (2004) 461.
14. A. Kawai and N. Moriike, “Adhesion and
Cohesion Analysis of ArF/SOR Resist Patterns
with Microtip of Atomic Force Microscope
(AFM)”, J. Photopolym. Sci. Technol., 14(4)
(2001) 507.
15. A. Kawai and T. Abe, “Direct Measurement of
Resist Pattern Adhesion on the Surface with
Silane-coupling Treatment by Atomic Force
Microscope (AFM)”, J. Photopolym. Sci. Technol.,
14(4) (2001) 513.
16. A. Kawai and Y. Kaneko, “Fatigue Property of
Resist Micro Pattern Analyzed by Atomic Force
Microscope Tip”, J. Photopolym. Sci. Technol.,
14(5) (2001) 701.
17. A. Kawai, “Collapse of Dot Patterns Formed
on Various Substrates Analyzed by Tip Scanning
Method”, J. Photopolym. Sci. Technol., 14(5)
(2001) 723.
18. A. Kawai and Y. Kaneko, “Estimation of
Young’s Modulus of Resist Pattern by using
Atomic Force Microscope”, J. Photopolym. Sci.
Technol., 14(5) (2001) 731.
19. A. Kawai and Y. Kawakami, “DUV Hardened
Layer of Resist Dot Pattern Detected by Tip
Indentation Method”, J. Photopolym. Sci. Technol.,
14(5) (2001) 749.
20. A. Kawai and N. Moriike, “Resist Hardening
by Electron Beam Irradiation Analyzed by Atomic
Force Microscope”, J. Photopolym. Sci. Technol.,
14(5) (2001) 751.
21. A. Kawai, “Adhesion and Cohesion Properties
of Dot Resist Patterns Ranging from 84 to 364 nm
Diameter Analyzed by Direct Peeling Method with
Atomic Force Microscope Tip”, J. Photopolym.
Sci. Technol., 15(1) (2002) 121.
22. A. Kawai and D. Inoue, “Van der Waals
Interaction between Polymer Aggregates and
Substrate Surface Analyzed by Atomic Force
Microscope (AFM)”, J. Photopolym. Sci. Technol.,
15(1) (2002) 127.
23. A. Kawai, “Cohesion Property of Polymer
Aggregates in Resist Pattern Analyzed by Atomic
Force Microscope (AFM)”, J. Photopolym. Sci.
Technol., 15(3) (2002) 371.
24. A. Kawai and D. Inoue, “Peeling Property of
Resist Pattern in Water Analyzed by Atomic Force
Microscope”, J. Photopolym. Sci. Technol., 15(5)
(2002) 757.
25. A. Kawai, “Resist Pattern Peel due to
Resonance Effect of Micro Tip”, J. Photopolym.
Sci. Technol., 15(5) (2002) 759.
26. A. Kawai, “Cohesion Property of Resist Micro
Pattern Analyzed by using Atomic Force
Microscope (AFM)”, J. Photopolym. Sci. Technol.,
16(3) (2003) 381.
27. N. Kubota, T. Hayashi, T. Iwai, H. Komano
and A. Kawai, “Resist Design using AFM
Analysis for ArF Lithography”, J. Photopolym. Sci.
Technol., 16(3) (2003) 467.
28. T. Niiyama, Y. Sawanaga and A. Kawai,
“Determination of Electrified Area Formed by
AFM Lithography”, J. Photopolym. Sci. Technol.,
16(5) (2003) 661.
29. M. Hirano and A. Kawai, “Adhesion of AFM
Tip to Resist Surface due to Laplace Force”, J.
Photopolym. Sci. Technol., 16(5) (2003) 663.
30. A. Kawai and J. Kawakami, “Characterization
of SiO2 Surface Treated by HMDS Vapor and O2
Plasma with AFM Tip”, J. Photopolym. Sci.
Technol., 16(5) (2003) 665.
31. A. Kawai and Y. Sawanaga, “Condensation
Control of Micro Particles by Charge Deposition
Method”, J. Photopolym. Sci. Technol., 16(5)
(2003) 669.
32. A. Ishikawa, T. Tanji and A. Kawai,
“Cohesion Property of Polymer Aggregate
Depending on Hardening Treatment”, J.
Photopolym. Sci. Technol., 17(1) (2004) 99.
33. A. Kawai, A. Seki and H. Endo, “Viscous
Finger Pattern Formed in Photoresist Film during
Heat Treatment”, J. Photopolym. Sci. Technol.,
17(1) (2004) 103.
34. H. Endo and A. Kawai, “Micro Bubbles
Captured at Micro Defect on Resist Film”, J.
Photopolym. Sci. Technol., 17(1) (2004) 105.
35. H. Endo and A. Kawai, “Adhesion Mechanism
of Micro Bubbles on ArF and F2 Excimer Resists”,
J. Photopolym. Sci. Technol., 17(5) (2004) 713.
36. A. Ishikawa, T. Tanji and A. Kawai,
"Determination of Young's Modulus of Polymer
Aggregate Based on Hertz Theory", J. Photopolym.
Sci. Technol., 17(5) (2004) 715.
Masayuki Endo
Matsushita Electric Ind. Co., Ltd.