Ding Ding
1137 E. Orange St. #32, Tempe, AZ, 85281
Phone 480-965-3196 (O)
Phone 480-406-1232 (M)
E-mail ding.ding@asu.edu
Ding Ding
Education
2001 – present Arizona State University, AZ, USA
Ph. D student/candidate, Science and Engineering of Materials, School of Materials,
Advisor: Professor Yong-Hang Zhang
1992 – 1997 B.S., Department of Physics, Major: Optics, Sichuang University, Chengdu, China
Research
experience
2001 – present Research Associate, MBE Optoelectronics Group, Arizona State University
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Semiconductor electroluminescence refrigeration
Electroluminescence refrigeration device design and MBE growth
Material characterization (PL, reflectance, XRD)
Device processing flow design
Device testing (probe station, time resolved PL and EL measurements)
Fundamental thermodynamic study of semiconductor light emitting processes
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Long wavelength datacom VCSELs using the GaAsSb/GaAsP/GaAs material system
MBE growth of 1.3 m GaAsSb/GaAs VCSELs and edge-emitting lasers
Material characterization (photoluminescence, reflectance, XRD, Hall measurements)
Work
experience
Summary of
skills
1997 – 2001 Assistant Research Scientist, Key Lab of Semiconductor Materials, Institute of
Semiconductors, Chinese Academy of Sciences
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High power 808 nm and 980 nm GaAs based semiconductor lasers, 1.3 m InGaAs
based quantum dot lasers, InP red lasers, InP based quantum cascade lasers
MBE growth and maintenance
Material characterization (photoluminescence, Hall measurements, XRD, TEM, AFM)
Device testing (probe station, lifetime testing)
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III-V material growth
9 years experience in the area of III-V materials growth using MBE (1997 – present)
Material and device characterization
9 years experience in the area of III-V device and materials characterization using PL,
XRD, Hall measurements, and probe station based testing (1997 – present)
2 years experience in the area of microscopy using AFM and TEM (1999 – 2000)
Simulation and Programming
Matlab, Mathcad, C/C++, Visual Basic, Sim-windows
Language
Fluent in English and Chinese
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Publications
1 first author and 4 contributed journal papers during PhD study; 33 contributed journal
papers while at the Institute of Semiconductors, Chinese Academy of Sciences
3 first author and 25 contributed papers and abstracts in conference proceedings
2 patent invention disclosures filed during PhD study
4 first author and 34 contributed presentations at conference and workshops;
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Selected Publications
1.
S. R. Johnson, D. Ding, J.-B. Wang, S.-Q. Yu, and Y.-H. Zhang, Excitation Dependent Photoluminescence
Measurements of the Nonradiative Lifetime and Quantum Efficiency in GaAs, J. Vac. Sci. Technol. B
(Accepted).
2.
D. Ding, S. R. Johnson, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Intrinsic irreversibility in semiconductor light
mission, Physica Status Solidi (C)4，No.5, 1698-1701 (2007)
3.
J.-B. Wang, S. R. Johnson, D. Ding, S.-Q. Yu, Y.-H. Zhang, Influence of photon recycling on cooling
efficiency and cooling power in semiconductor luminescence refrigeration, J. of Appl. Phys. 100, 043502
(2006).
4.
D. Ding, J.-B. Wang, S.-Q. Yu, S. R. Johnson, Y.-H. Zhang, Optimal Bandgap Energy for Optical
Refrigeration in Semiconductors, SPIE 50th Annual Meeting/Optics & Photonics (2005).
5.
D. Ding, J.-B. Wang, S.-Q. Yu, S. R. Johnson, Y.-H. Zhang, Thermodynamic Analysis of Optical
Refrigeration in Semiconductors, Conference on Lasers and Electro-Optics, 2005-CLEO/IQEC Technical
Digest (2005).
6.
D. Ding, S. R. Johnson, J.-B. Wang, S.-Q. Yu, Y.-H. Zhang, Thermodynamics of Optical Refrigeration in
Semiconductors, 4th Annual Workshop on Laser Cooling of Solids, Albuquerque NM, June 2005.
7.
F. Q. Liu, D. Ding, B. Xu, Y. Z. Zhang, Q. S. Zhang, Z. G. Wang, D. S. Jiang, B. Q. Sun, Straincompensated quantum cascade lasers operating at room temperature, J. of Crystal Growth 220, 439(2000).
8.
Z. Z. Sun, D. Ding, Q. Gong, W. Zhou, B. Xu, Z. G. Wang, Quantum-dot superluminescent diode: A
proposal for an ultra-wide output spectrum, Optical and Quantum Electronics 31, 1235 (1999).
9.
Z. Z. Sun, F. Q. Liu, D. Ding, B. Xu, Z. G. Wang, Self-assembled InAs and In0.9Al0.1As quantum dots on
(001)InP substrates grown by molecular beam epitaxy (MBE), J. of Crystal Growth 204, 24 (1999).
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