Effects of low-temperature Si buffer thickness and SiGe oxidation on sensitivity of
Si1-xGex nanowire
賴瓊惠,Yi-Lung Lai,Tai-Yuan Chang,Kow-Ming Chang,Chu-Feng Chen,Yi-Ming
Chen,Allen Jong-Woei Whang,Hui-Lung Lai,Huai-Yi Chen,Shiu-Yu Wang
Electronics Engineering
Engineering
chlai@chu.edu.tw
Abstract
Si1%xGex nanowire biosensors are attractive for their high sensitivity due to the large
surface-to-volume ratio, high carrier mobility, and silicon compatibility. In this work,
we study the effect of the thickness of the low-temperature Si (LT-Si) buffer layer on
an insulator on the sensitivity of oxidized Si1%xGex nanowire samples with different
Ge contents by increasing the Si buffer thickness from 20 to 60 nm.
3-Aminopropyltrimethoxysilane (APTMS) was used as a biochemical reagent. It was
demonstrated that, with the proper Ge content and LT-Si buffer thickness, the
sensitivity of the Si1%xGex nanowire is high and it can be further improved by
Si1%xGex oxidation. This can be attributed to the reduction of the diameter to the
nanometer order, which gives rise to an increased surface-to-volume ratio and further
enhances the sensitivity of the biosensor.
Keyword：biosensor