Publication list of S. J. Chang 張守進著作目錄
A. Referred Papers:
1. S. J. Chang, T. J. Hsueh, C. L. Hsu, Y. R. Lin, I. C. Chen and B. R. Huang, "A
ZnO nanowire vacuum pressure sensor", Nanotechnol., Vol. 19, No. 9, Art. no.
095505, March 2008. (SCI, EI, 1.0)
2. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, Y. C. Cheng and W. J.
Lin, "Improved external quantum efficiency of GaN p-i-n photodiodes with a
TiO2 roughened surface", IEEE Photon. Technol. Lett., Vol. 20, No. 4, pp.
285-287, February 2008. (SCI, EI, 0.5)
3. T. J. Wang, C. H. Ko, S. J. Chang, S. L. Wu, T. M. Kuan and W. C. Lee, "The
effects of mechanical uniaxial stress on junction leakage in nanoscale
CMOSFETs", IEEE Tran. Electron. Dev., Vol. 55, No. 2, pp. 572-577, February
2008. (SCI, EI, 1.0)
4. S. J. Chang, C. H. Lan, J. D. Hwang, Y. C. Cheng, W. J. Lin, J. C. Lin and H. Z.
Chen, "Sputtered indium-tin-oxide on p-GaN", J. Electrochem. Soc., Vol. 155,
No. 2, pp. H140-H143, February 2008. (SCI, EI, 1.0)
5. S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, C. F. Kuo, H. M.
Chang and U. H. Liaw, "ZnO epitaxial layer grown on nitridated Si(100)
substrate with HT-GaN/LT-ZnO double buffer", J. Crystal Growth, Vol. 310, No.
2, pp. 290-294, February 2008. (SCI, EI, 1.0)
6. L. W. Ji, S. J. Chang, T. H. Fang, S. J. Young and F. S. Juang, "MOVPE-grown
ultrasmall self-organized InGaN nanotips", IEEE Tran. Nanotechnol., Vol. 7, No.
1, pp. 1-4, January 2008. (SCI, EI, 1.0)
7. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, W. R. Chen, Y. C. Cheng. W. J. Lin,
Y. C. Tzeng, H. Y. Shin and C. M. Chang, "InN grown on GaN/sapphire
templates at different temperatures by MOCVD", Optical Mater., Vol. 30, No. 4,
pp. 517-520, December 2007. (SCI, EI, 0.5)
8. T. J. Hsueh, Y. W. Chen, S. J. Chang, S. F. Wang, C. L. Hsu, Y. R. Lin, T. S. Lin
and I. C. Chen, "ZnO nanowire-based CO sensors prepared at various
temperatures", J. Electrochem. Soc., Vol. 154, No. 12, pp. J393-J396, December
2007. (SCI, EI, 1.0)
9. T. J. Hsueh, C. L. Hsu, S. J. Chang, Y. R. Lin, S. P. Chang, Y. Z. Chiou, T. S. Lin
and I. C. Chen, "Crabwise ZnO nanowire UV photodetector prepared on
ZnO:Ga/glass template", IEEE Tran. Nanotechnol., Vol. 6, No. 6, pp. 595-600,
November 2007. (SCI, EI, 1.0)
10. S. J. Chang, W. S. Chen, S. C. Shei, T. K. Ko, C. F. Shen, Y. P. Hsu, C. S. Chang,
J. M. Tsai, W. C. Lai and A. J. Lin, "Highly reliable high-brightness GaN-based
flip chip LEDs", IEEE Tran. Adv. Packaging, Vol. 30, No. 4, pp. 752-757,
November 2007. (SCI, EI, 1.0)
1
11. P. C. Chang, C. L. Yu, S. J. Chang, K. H. Lee, C. H. Liu and S. L. Wu,
"High-detectivity nitride-based MSM photodetectors on InGaN-GaN
multiquantum well with the unactivated Mg-doped GaN layer", IEEE J. Quan.
Electron., Vol. 43, No. 11, pp. 1060-1064, November 2007. (SCI, EI, 1.0)
12. K. T. Lam, S. L. Wu, S. J. Chang, Y. P. Wang and U. H. Liaw, "Influence of
process flow on the characteristics of strained-Si nMOSFETs", Electrochem.
Solid State Lett., Vol. 10, No. 11, pp. H331-H333, November 2007. (SCI, EI, 1.0)
13. R. W. Chuang, C. L. Yu, S. J. Chang, P. C. Chang, J. C. Lin and T. M. Kuan,
"Crystal growth and characterization of AlGaN/GaN heterostructures prepared
on vicinal-cut sapphire (0 0 0 1) substrates", J. Crystal Growth, Vol. 308, No. 2,
pp. 252-257, October 2007. (SCI, EI, 0.5)
14. T. J. Hsueh, C. L. Hsu, S. J. Chang and I. C. Chen, "Laterally grown ZnO
nanowire ethanol gas sensors", Sensors and Actuators B, Vol. 126, No. 2, pp.
473-477, October 2007. (SCI, EI, 1.0)
15. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. Y.
Huang, W. C. Lai, W. C. Lin and Y. C. Cheng, "High responsivity of GaN p-i-n
photodiode by using low-temperature interlayer", Appl. Phys. Lett., Vol. 91, No.
17, Art. no. 173502, October 2007. (SCI, EI, 0.5)
16. R. W. Chuang, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C.
Lin, C. F. Kuo and H. M. Chang, "Gallium nitride metal-semiconductor-metal
photodetectors prepared on silicon substrates", J. Appl. Phys., Vol. 102, No. 7,
Art. no. 073110, October 2007. (SCI, EI, 0.5)
17. S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo
and H. M. Chang, "ZnO photoconductive sensors epitaxially grown on sapphire
substrates", Sensors and Actuators A, Vol. 140, No. 1, pp. 60-64, October 2007.
(SCI, EI, 1.0)
18. S. J. Chang, S. C. Wei, Y. K. Su and W. C. Lai, "Nitride-based dual-stage MQW
LEDs", J. Electrochem. Soc., Vol. 154, No. 10, pp. H871-H874, October 2007.
(SCI, EI, 0.5)
19. P. C. Chang, C. L. Yu, S. J. Chang, Y. C. Lin and S. L. Wu, "Low-noise and
high-detectivity GaN UV photodiodes with a low-temperature AlN cap layer",
IEEE Sensors Journal, Vol. 7, No. 9, pp. 1289-1292, September 2007. (SCI, EI,
1.0)
20. K. T. Lam, C. L. Yu, P. C. Chang, U. H. Liaw, J. C. Lin and S. J. Chang,
"Al0.22Ga0.78N/GaN HFETs prepared on vicinal-cut sapphire substrates", J.
Electrochem. Soc., Vol. 154, No. 9, pp. H811-H813, September 2007. (SCI, EI,
1.0)
21. J. D. Jhou, S. J. Chang, Y. K. Su, Y. Y. Lee, C. H. Liu and H. C. Lee, "GaN
Schottky barrier photodetectors with SiN/GaN nucleation layer", Appl. Phys.
Lett., Vol. 91, No. 10, Art. no. 103506, September 2007. (SCI, EI, 0.5)
22. S. J. Young, L. W. Ji, S. J. Chang, T. H. Fang and T. J. Hsueh, "Nanoindentation
of vertical ZnO nanowires", Physica E, Vol. 39, No. 2, pp. 240-243, September
2007. (SCI, EI, 1.0)
2
23. P. C. Chang, C. L. Yu, S. J. Chang, Y. C. Lin and S. L. Wu, "Low-noise and
high-detectivity GaN-based UV photodiode with a semi-insulating Mg-doped
GaN cap layer", IEEE Sensors Journal, Vol. 7, No. 9, pp. 1270-1273, September
2007. (SCI, EI, 1.0)
24. H. Hung, S. J. Chang, Y. C. Lin, H. Kuan and R. M. Lin, "AlGaN MSM
photodetectors with recess-etched LT-AlGaN cap layers", IET Optoelectron., Vol.
1, No. 4, pp. 147-149, August 2007. (SCI, EI, 1.0)
25. S. H. Yang, C. Y. Lu and S. J. Chang, "Luminescence enhancement mechanism
of ZnGa2O4 phosphor screen with an In2O3 buffer layer ", J. Electrochem. Soc.,
Vol. 154, No. 8, pp. J229-J233, August 2007. (SCI, EI, 1.0)
26. G. H. Yang, J. D. Hwang, C. H. Lan, C. M. Chan, H. Z. Chen and S. J. Chang,
"Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors
using liquid-phase-deposition oxide", Jpn. J. Appl. Phys., Vol. 46, No. 8A, pp.
5119-5121, August 2007. (SCI, EI, 1.0)
27. T. J. Hsueh, Y. W. Chen, S. J. Chang, S. F. Wang, C. L. Hsu, Y. R. Lin, T. S. Lin
and I. C. Chen, "ZnO nanowire-based CO sensors prepared on patterned
ZnO:Ga/SiO2/Si templates", Sensors and Actuators B, Vol. 125, No. 2, pp.
498-503, August 2007. (SCI, EI, 1.0)
28. C. Y. Hu, S. C. Chen, J. F. Chen, S. J. Chang, M. H. Wang, V. Yeh and J. C.
Chen, "Ultrathin decoupled plasma nitridation SiON gate dielectrics prepared
with various RF powers", J. Vacuum Sci. Technol. B, Vol. 25, No. 4, pp.
1298-1304, July/August 2007. (SCI, EI, 0.5)
29. S. H. Yang, T. J. Hsueh and S. J. Chang, "Effect of substrate properties on
luminescence of white ZnGa2O4 phosphor ", Jpn. J. Appl. Phys., Vol. 46, No. 7A,
pp. 4166-4169, July 2007. (SCI, EI, 1.0)
30. C. H. Lee, S. L. Wu, S. H. Chen, C. W. Kuo, Y. M. Lin, J. F. Chen and S. J.
Chang, "Negative bias temperature instability characteristics of strained SiGe
pMOSFETs", Electron. Lett., Vol. 43, No. 15, pp. 835-836, July 2007. (SCI, EI,
0.5)
31. T. J. Hsueh, C. L. Hsu, S. J. Chang, P. Y. Guo, J. H. Hsieh and I. C. Chen,
"Cu2O/n-ZnO nanowire solar cells on ZnO:Ga/glass templates", Scripta
Materialia, Vol. 57, No. 1, pp. 53-56, July 2007. (SCI, EI, 1.0)
32. C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z Chiou, C. F. Kuo, H. M. Chang C. L.
Hsu and I. C. Chen, "Noise characteristics of ZnO-nanowire photodetectors
prepared on ZnO:Ga/glass templates", IEEE Sensors Journal, Vol. 7, No. 7, pp.
1020-1024, July 2007. (SCI, EI, 1.0)
33. S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo,
and H. M. Chang, "Low-frequency noise characteristics of epitaxial ZnO
photoconductive sensors", J. Electrochem. Soc., Vol. 154, No. 7, pp. J209-J211,
July 2007. (SCI, EI, 1.0)
34. T. J. Hsueh, S. J. Chang, C. L. Hsu, Y. R. Lin and I. C. Chen, "Highly sensitive
ZnO nanowire ethanol sensor with Pd adsorption", Appl. Phys. Lett., Vol. 91, No.
5, Art. no. 053111, July 2007. (SCI, EI, 1.0)
3
35. S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei and J. K.
Sheu, "Nitride-based light emitting diodes with indium tin oxide electrode
patterned by imprint lithography", Appl. Phys. Lett., Vol. 91, No. 1, Art. no.
013504, July 2007. (SCI, EI, 1.0)
36. C. H. Kuo, S. J. Chang and H. Kuan, "GaN-based indium-tin-oxide light
emitting diodes with nanostructured silicon upper contacts", IET Optoelectron.,
Vol. 1, No. 3, pp. 110-112, June 2007. (SCI, EI, 1.0)
37. S. J. Young, L. W. Ji, S. J. Chang, Y. P. Chen, K. T. Lam, S. H. Liang, X. L. Du,
Q. K. Xie and Y. S. Sun, "ZnO metal-semiconductor-metal ultraviolet
photodetectors with iridium contact electrodes", IET Optoelectron., Vol. 1, No. 3,
pp. 135-139, June 2007. (SCI, EI, 1.0)
38. J. J. Horng, Y. K. Su, S. J. Chang, W. S. Chen and S. C. Shei, "GaN-based
power LEDs with CMOS ESD protection circuits", IEEE Tran. Dev. Mater.
Reliability, Vol. 7, No. 2, pp. 340-346, June 2007. (SCI, EI, 0.5)
39. C. H. Liu, S. J. Chang, K. T. Lam and Y. S. Sun, "SiGe doped-channel
field-effect transistor", Mater. Chem. Phys., Vol. 103, No. 2-3, pp. 222-224, June
2007. (SCI, EI, 1.0)
40. C. L. Yu, P. C. Chang, S. J. Chang and S. L. Wu, "High-detectivity GaN MSM
photodetectors with low-temperature GaN cap layers and Ir/Pt contact
electrodes", Electrochem. Solid State Lett., Vol. 10, No. 6, pp. H171-H174, June
2007. (SCI, EI, 1.0)
41. S. J. Chang, C. F. Shen, W. S. Chen, T. K. Ko, C. T. Kuo, K. H. Yu, S. C. Shei
and Y. Z. Chiou, "Nitride-based LEDs with an insulating SiO2 layer underneath
p-pad electrodes", Electrochem. Solid State Lett., Vol. 10, No. 6, pp. H175-H177,
June 2007. (SCI, EI, 1.0)
42. S. J. Chang, C. L. Yu, P. C. Chang and Y. C. Lin, "GaN ultraviolet photodetector
with a low-temperature AlN cap layer", Electrochem. Solid State Lett., Vol.
10, No. 6, pp. H196-H198, June 2007. (SCI, EI, 1.0)
43. S. J. Young, L. W. Ji, S. J. Chang, T. H. Fang, T. J. Hsueh, T. H. Meen and I. C.
Chen, "Nanoscale mechanical characteristics of vertical ZnO nanowires grown
on ZnO:Ga/glass templates", Nanotechnol., Vol. 18, No. 22, Art. no. 225603,
June 2007. (SCI, EI, 1.0)
44. C. L. Yu, R. W. Chuang, S. J. Chang, P. C. Chang, K. H. Lee and J. C. Lin,
"InGaN-GaN
MQW
metal-semiconductor-metal
photodiodes
with
semi-insulating Mg-doped GaN cap layers", IEEE Photon. Technol. Lett., Vol. 19,
No. 11, pp. 846-848, June 2007. (SCI, EI, 0.5)
45. J. J. Horng, Y. K. Su, S. J. Chang, T. K. Ko and S. C. Shei, "Nitride-based
Schottky barrier sensor module with high electrostatic discharge reliability",
IEEE Photon. Technol. Lett., Vol. 19, No. 10, pp. 717-719, May 2007. (SCI, EI,
0.5)
46. C. F. Shen, S. J. Chang, W. S. Chen, T. K. Ko, C. T. Kuo and S. C. Shei,
"Nitride-based high-power flip-chip LED with double-side patterned sapphire
substrate", IEEE Photon. Technol. Lett., Vol. 19, No. 10, pp. 780-782, May 2007.
4
47.
48.
49.
50.
51.
52.
53.
54.
55.
56.
57.
(SCI, EI, 1.0)
C. H. Lin, S. L. Wu, C. Y. Wu, T. K. Kang, K. C. Huang and S. J. Chang,
"Impact
of
SiN
on
performance
in
novel
complementary
metal-oxide-semiconductor architecture using substrate strained-SiGe and
mechanical strained-Si technology", Jpn. J. Appl. Phys., Vol. 46, No. 5A, pp.
2882-2886, May 2007. (SCI, EI, 1.0)
P. C. Chang, C. L. Yu, C. H. Liu, S. J. Chang, Y. K. Su, R. W. Chuang and Y. J.
Chiou, "Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier
diodes", Phys. Status Solidi C, Vol. 4, No. 5, pp. 1625-1628, May 2007. (SCI, EI,
0.33)
H. Hung, K. T. Lam, S. J. Chang, H. Kuan, C. H. Chen and U. H. Liaw, "Effects
of thermal annealing on In-induced metastable defects in InGaN films", Mater.
Sci. Semicond. Processing, Vol. 10, No. 2-3, pp. 112-116, April-June 2007. (SCI,
EI, 1.0).
S. J. Chang, H. Hung, Y. C. Lin, M. H. Wu, H. Kuan and R. M. Lin, "AlGaN
ultraviolet
metal-semiconductor-metal
photodetectors
with
low-temperature-grown cap layers", Jpn. J. Appl. Phys., Vol. 46, No. 4B, pp.
2471-2473, April 2007. (SCI, EI, 1.0)
S. J. Chang, T. K. Ko, J. K. Sheu, S. C. Shei, W. C. Lai, Y. Z. Chiou, Y. C. Lin,
C. S. Chang, W. S. Chen and C. F. Shen, "AlGaN ultraviolet
metal-semiconductor-metal photodetectors grown on Si substrates", Sensors and
Actuators A, Vol. 135, No. 2, pp. 502-506, April 2007. (SCI, EI, 1.0)
S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, T. H. Fang, K. J.
Chen, X. L. Du and Q. K. Xue, "ZnO-based MIS photodetectors", Sensors and
Actuators A, Vol. 135, No. 2, pp. 529-533, April 2007. (SCI, EI, 1.0)
C. L. Yu, P. C. Chang, S. J. Chang and S. L. Wu, "High-detectivity GaN MSM
photodetectors with low-temperature GaN cap layers and Ir/Pt contact
electrodes", Electrochem. Solid State Lett., Vol. 10, No. 6, pp. H171-H174,
March 2007. (SCI, EI, 1.0)
Y. P. Hsu, S. J. Chang, W. S. Chen, J. K. Sheu, J. Y. Chu and C. T. Kuo,
"Crack-free high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN
buffer and two LT-Al interlayers", J. Electrochem. Soc., Vol. 154, No. 3, pp.
H191-H193, March 2007. (SCI, EI, 1.0)
T. J. Hsueh, C. L. Hsu, S. J. Chang, Y. R. Lin, T. S. Lin and I. C. Chen, "Growth
and characterization of sparsely dispersed ZnO nanowires", J. Electrochem. Soc.,
Vol. 154, No. 3, pp. H153-H156, March 2007. (SCI, EI, 1.0)
T. J. Hsueh, C. L. Hsu, S. J. Chang, C. Y. Lu, Y. R. Lin and I. C. Chen,
"Crabwise ZnO nanowires: growth and field emission properties", J. Nanosci.
Nanotechnol., Vol. 7, No. 3, pp. 1076-1079, March 2007. (SCI, EI, 1.0)
J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, Y. C.
Cheng and W. J. Lin, "GaN-based light-emitting diodes prepared on vicinal
sapphire substrates", IET Optoelectron., Vol. 1, No. 1, pp. 23-26, February 2007.
(SCI, EI, 0.5)
5
58. C. F. Shen, S. J. Chang, T. K. Ko, S. C. Shei, W. C. Lai, C. S. Chang, W. S.
Chen, S. P. Huang, Y. W. Ku and R. H. Horng, "Nitride-based high power
flip-chip near-UV LEDs with reflective submount", IET Optoelectron., Vol. 1,
No. 1, pp. 27-30, February 2007. (SCI, EI, 1.0)
59. S. J. Chang, T. K. Lin, Y. Z. Chiou, B. R. Huang, S. P. Chang, C. M. Chang, Y.
C. Lin and C. C. Wong, "ZnSe based white light emitting diode on homoepitaxial
ZnSe substrate", IET Optoelectron., Vol. 1, No. 1, pp. 39-41, February 2007.
(SCI, EI, 1.0)
60. T. J. Wang, H. W. Chen, P. C. Yeh, C. H. Ko, S. J. Chang, J. Yeh, S. L. Wu, C. Y.
Lee, W. C. Lee and D. D. Tang, "Effects of mechanical uniaxial stress on SiGe
HBT characteristics", J. Electrochem. Soc., Vol. 154, No. 2, pp. H105-H108,
February 2007. (SCI, EI, 1.0)
61. C. H. Liu, K. T. Lam, S. J. Chang, C. K. Wang and Y. S. Sun, "Flicker noise of
AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor
with a photo-CVD SiO2 Layer", J. Electrochem. Soc., Vol. 154, No. 2, pp.
H119-H123, February 2007. (SCI, EI, 1.0)
62. C. L. Yu, C. H. Chen, S. J. Chang and P. C. Chang, "GaN
metal-semiconductor-metal ultraviolet photodetectors with Ir/Pt contact
electrodes", J. Electrochem. Soc., Vol. 154, No. 2, pp. J71-J72, February 2007.
(SCI, EI, 1.0)
63. T. K. Lin, K. T. Lam, S. J. Chang, Y. Z. Chiou and S. P. Chang, "Ni/Au contacts
on homoepitaxial p-ZnSe with surface oxygen plasma treatments", J. Vac. Sci.
Technol. B, Vol. 25, No. 1, pp. 213-216, January/February 2007. (SCI, EI, 1.0)
64. H. Hung, C. H. Chen, S. J. Chang, H. Kuan, R. M. Lin and C. H. Liu, "Kinetics
of persistent photoconductivity in InGaN epitaxial films grown by MOCVD", J.
Crystal Growth, Vol. 298, No. 1, pp. 246-250, January 2007. (SCI, EI, 1.0)
65. M. L. Tu, Y. K. Su, S. J. Chang and R. W. Chuang, "GaNUV photodetector by
using transparency antimony-doped tin oxide electrode", J. Crystal Growth, Vol.
298, No. 1, pp. 744-747, January 2007. (SCI, EI, 0.33)
66. Y. P. Wang, S. L. Wu and S. J. Chang, "Tradeoff between short channel effect
and mobility in strained-Si nMOSFETs", Semicond. Sci. Technol., Vol. 22, No. 1,
pp. S50-S54, January 2007. (SCI, EI, 1.0)
67. C. H. Lin, Y. K. Su, Y. Z. Juang, C. F. Chiou, S. J. Chang, J. F. Chen and C. H.
Tu, "The optimized geometry of the SiGe HBT power cell for 802.11a WLAN
applications", IEEE Microwave Wireless Components Lett., Vol. 17, No. 1, pp.
49-51, January 2007. (SCI, EI, 0.33)
68. W. C. Lai, K. T. Lam, C. H. Liu and S. J. Chang, "InGaN/GaN MQW structures
prepared with various In and Ga flow rates", International J. Electron., Vol. 94,
No. 1, pp. 1-7, January 2007. (SCI, EI, 1.0)
69. Y. P. Wang, S. L. Wu and S. J. Chang, "Low-frequency noise characteristics in
strained-Si nMOSFETs", IEEE Electron. Dev. Lett., Vol. 28, No. 1, pp. 36-38,
January 2007. (SCI, EI, 1.0)
70. S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang and X. L. Du, "ZnO ultraviolet
6
71.
72.
73.
74.
75.
76.
77.
78.
79.
80.
81.
82.
photodiodes with Pd contact electrodes", Acta Materialia, Vol. 55, No. 1, pp.
329-333, January 2007. (SCI, EI, 1.0)
S. J. Young, L. W. Ji, S. J. Chang and X. L. Du, "ZnO metal-semiconductormetal ultraviolet photodiodes with Au contacts", J. Electrochem. Soc., Vol. 154,
No. 1, pp. H26-H29, January 2007. (SCI, EI, 1.0)
L. T. Chen, C. S. Hwang, I. G. Chen and S. J. Chang, "Chromaticity of
inhomogeneous broadening effect on CaxSr1-xAl2O4:Eu2+ phosphors", J. Alloys
and Compounds, Vol. 426, No. 1-2, pp. 395-399, December 2006. (SCI, EI, 1.0)
C. F. Shen, S. J. Chang, T. K. Ko, C. T. Kuo, S. C. Shei, W. S. Chen, C. T. Lee,
C. S. Chang and Y. Z. Chiou, "Nitride-based light emitting diodes with textured
sidewalls and pillar waveguides", IEEE Photon. Technol. Lett., Vol. 18, No. 23,
pp. 2517-2519, December 2006. (SCI, EI, 0.5)
S. C. Hung, Y. K. Su, S. J. Chang and Y. H. Chen, "Vertically aligned GaN
nanotubes - Fabrication and current image analysis", Microelectron. Eng., Vol.
83, No. 11-12, pp. 2441-2445, November-December 2006. (SCI, EI, 0.5)
C. L. Yu, S. J. Chang, P. C. Chang, Y. C. Lin and C. T. Lee, "Nitride-based
ultraviolet Schottky barrier photodetectors with LT-AlN cap layers", Superlattice
Microst., Vol. 40, No. 4-6, pp. 470-475, October-December 2006. (SCI, EI, 0.5)
C. Y. Lu, S. J. Chang, S. P. Chang, C. T. Lee, C. F. Kuo, H. M. Chang Y. Z
Chiou, C. L. Hsu and I. C. Chen, "Ultraviolet photodetectors with ZnO
nanowires prepared on ZnO:Ga/glass templates", Appl. Phys. Lett., Vol. 89, No.
15, Art. no. 153101, October 2006. (SCI, EI, 0.5)
S. J. Chang, C. L. Yu, R. W. Chuang, P. C. Chang, Y. C. Lin, Y. W. Jhan and C.
H. Chen, "Nitride-based MIS-like photodiodes with semiinsulating Mg-doped
GaN cap layers", IEEE Sensors Journal, Vol. 6, No. 5, pp. 1043-1044, October
2006. (SCI, EI, 0.5)
S. J. Young, L. W. Ji, R. W. Chuang, S. J. Chang and X. L. Du,
"Characterization of ZnO metal-semiconductor-metal ultraviolet photodiodes
with palladium contact electrodes", Semicond. Sci. Technol., Vol. 21, No. 10, pp.
1507-1511, October 2006. (SCI, EI, 0.5)
S. J. Chang, C. L. Yu, P. C. Chang, Y. C. Lin and C. H. Chen, "Nitride-based
MIS-like diodes with semi-insulating Mg-doped GaN cap layers", Semicond. Sci.
Technol., Vol. 21, No. 10, pp. 1422-1424, October 2006. (SCI, EI, 1.0)
S. C. Hung, Y. K. Su, T. H. Fang and S. J. Chang, "Shell buckling behavior
investigation of individual gallium nitride hollow nanocolumn", Appl. Phys. A,
Vol. 84, No. 4, pp. 439-443, September 2006. (SCI, EI, 0.5)
S. J. Chang, C. F. Shen, S. C. Shei, R. W. Chuang, C. S. Chang, W. S. Chen, T.
K. Ko and J. K. Sheu, "Highly reliable nitride-based LEDs with internal ESD
protection diodes", IEEE Tran. Dev. Mater. Reliability, Vol. 6, No. 3, pp. 442-447,
September 2006. (SCI, EI, 0.5)
T. K. Ko, S. C. Shei, S. J. Chang, Y. Z. Chiou, R. M. Lin, W. S. Chen, C. F. Shen,
C. S. Chang and K. W. Lin, "InGaN p-i-n ultraviolet - A band-pass
photodetectors", IEE Proc. - Optoelectron., Vol. 153, No. 4, pp. 212-214, August
7
83.
84.
85.
86.
87.
88.
89.
90.
91.
92.
93.
94.
2006. (SCI, EI, 0.5)
T. K. Ko, S. J. Chang, J. K. Sheu, S. C. Shei, Y. Z. Chiou, M. L. Lee, C. F. Shen,
S. P. Chang and K. W. Lin, "AlGaN/GaN Schottky-barrier UV-B bandpass
photodetectors with ITO contacts and LT-GaN cap layers", Semicond. Sci.
Technol., Vol. 21, No. 8, pp. 1064-1068, August 2006. (SCI, EI, 1.0)
T. K. Ko, S. J. Chang, Y. K. Su, Y. Z. Chiou, S. C. Shei, J. K. Sheu, W. C. Lai, Y.
C. Lin, W. S. Chen and C. F. Shen, "Nitride-based flip-chip p-i-n photodiodes",
IEEE Tran. Adv. Packaging, Vol. 29, No. 3, pp. 483-487, August 2006. (SCI, EI,
0.5)
S. J. Chang, W. S. Chen, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu, C. F. Shen,
J. M. Tsai and S. C. Shei, "Nitride-based flip-chip LEDs with transparent ohmic
contacts and reflective mirrors", IEEE Tran. Adv. Packaging, Vol. 29, No. 3, pp.
403-408, August 2006. (SCI, EI, 1.0)
T. K. Ko, S. C. Shei, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, C. S. Chang,
W. S. Chen, C. K. Wang, J. K. Sheu and W. C. Lai, "Flip-chip
p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A photosensors", IEEE Sensors
Journal, Vol. 6, No. 4, pp. 964-969, August 2006. (SCI, EI, 0.5)
S. J. Chang, T. K. Lin, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M.
Chang, J. J. Tang and B. R. Huang, "ITO/homoepitaxial ZnSe/ITO MSM sensors
with thermal annealing", IEEE Sensors Journal, Vol. 6, No. 4, pp. 945-949,
August 2006. (SCI, EI, 0.5)
S. J. Chang, H. S. Hou and Y. K. Su, "Automated synthesis of passive filter
circuits including parasitic effects by genetic programming", Microelectron.
Journal, Vol. 37, No. 8, pp. 792-799, August 2006. (SCI, EI, 0.5)
S. J. Young, L. W. Ji, S. J. Chang and Y. K. Su, "ZnO
metal-semiconductor-metal ultraviolet sensors with various contact electrodes", J.
Crystal Growth, Vol. 293, No. 1, pp. 43-47, July 2006. (SCI, EI, 0.5)
T. K. Lin, S. J. Chang, B. R. Huang, K. T. Lam, Y. S. Sun, M. Fujita and Y.
Horikoshi, "Transparent RuOx contacts on n-ZnO", J. Electrochem. Soc., Vol.
153, No. 7, pp. G677-G680, July 2006. (SCI, EI, 1.0)
C. H. Kuo, S. J. Chang, G. C. Chi, K. T. Lam and Y. S. Sun, "Nitride-based light
emitting diodes with quaternary p-AlInGaN surface layers", Phys. Status Solidi
C, Vol. 3, No. 6, pp. 2153-2155, June 2006. (SCI, EI, 1.0)
C. M. Tsai, J. K. Sheu, P. T. Wang, S. C. Shei, S. J. Chang, C. H. Kuo, C. W.
Kuo and Y. K. Su, "High efficiency and improved ESD characteristics of
GaN-based LEDs with naturally textured surface grown by MOCVD", IEEE
Photon. Technol. Lett., Vol. 18, No. 11, pp. 1213-1215, June 2006. (SCI, EI, 0.5)
T. J. Hsueh, S. J. Chang, Y. R. Lin, S. Y. Tsai, I. C. Chen and C. L. Hsu, "A
novel method for the formation of ladder-like ZnO nanowires", Crystal Growth
& Design, Vol. 6, No. 6, pp. 1282-1284, June 2006. (SCI, EI, 1.0)
L. T. Chen, I. L. Sun, C. S. Hwang and S. J. Chang, "Luminescence properties
of BAM phosphor synthesized by TEA coprecipitation method", J.
Luminescence, Vol. 118, No. 2, pp. 293-300, June 2006. (SCI, EI, 1.0)
8
95. S. L. Wu, C. H. Lee, S. J. Chang and Y. M. Lin, "Inductively coupled plasma
etching of Si1–xGex in CF4/Ar and Cl2/Ar discharges", J. Vac. Sci. Technol. A, Vol.
24, No. 3, pp. 728-731, May/June 2006. (SCI, EI, 1.0)
96. Y. K. Su, S. H. Hsu, R. W. Chuang, S. J. Chang and W. C. Chen, "GaInNAs
metal-semiconductor-metal near-infrared photodetectors", IEE Proc. Optoelectron., Vol. 153, No. 3, pp. 128-130, June 2003. (SCI, EI, 0.33)
97. S. J. Chang, C. L. Yu, C. H. Chen, P. C. Chang, and K. C. Huang, "Nitride-based
ultraviolet metal-semiconductor-metal photodetectors with low-temperature GaN
cap layers and Ir/Pt contact electrodes", J. Vac. Sci. Technol. A, Vol. 24, No. 3, pp.
637-640, May/June 2006. (SCI, EI, 1.0)
98. T. K. Lin, S. J. Chang, Y. Z. Chiou, C. K. Wang, S. P. Chang, K. T. Lam, Y. S.
Sun and B. R. Huang, "Homoepitaxial ZnSe MIS photodetectors with SiO2 and
BST insulator layers", Solid State Electron., Vol. 50, No. 5, pp. 750-753, May
2006. (SCI, EI, 1.0)
99. K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang and Y. Horikoshi, "Electrical and
surface composition properties of phosphorus implantation in Mg-doped GaN",
Microelectron. Journal, Vol. 37, No. 5, pp. 417-420, May 2006. (SCI, EI, 0.33)
100.
Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, "Hole
confinement and 1/f noise characteristics of SiGe double-quantum-well p-type
metal-oxide-semiconductor field-effect transistors ", Jpn. J. Appl. Phys., Vol. 45,
No. 5A, pp. 4006-4008, May 2006. (SCI, EI, 1.0)
101.
C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A Ku band
four-stage PHEMT 1W MMIC power amplifier", Microelectron. Journal, Vol. 37,
No. 5, pp. 428-432, May 2006. (SCI, EI, 1.0)
102.
Y. K. Su, W. C. Chen, S. H. Hsu, J. D. Wu, S. J. Chang, R. W. Chuang and
W. R. Chen, "Improvement in linearity of novel InGaAsN-based high electron
mobility transistors", Jpn. J. Appl. Phys., Vol. 45, No. 4B, pp. 3372-3375, April
2006. (SCI, EI, 0.33)
103.
Y. Z. Chiou, Y. K. Su, J. Gong, S. J. Chang and C. K. Wang, "Noise analysis
of nitride-based metal oxide-semiconductor heterostructure field effect
transistors with photo-chemical vapor deposition SiO2 gate oxide in the linear
and saturation regions", Jpn. J. Appl. Phys., Vol. 45, No. 4B, pp. 3405-3409,
April 2006. (SCI, EI, 0.5)
104.
S. H. Hsu, W. R. Chen, Y. K. Su, R. W. Chuang, S. J. Chang and W. C. Chen,
"Effects of nitrogen incorporation on the electronic properties of GaxIn1-xNyAs1-y
epilayers probed by persistent photoconductivity", J. Crystal Growth, Vol. 290,
No. 1, pp. 87-90, April 2006. (SCI, EI, 0.33)
105.
S. J. Chang, T. K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K.
Sheu, W. C. Lai, Y. C. Lin, W. S. Chen and C. F. Shen, "GaN-based p-i-n sensors
with ITO contacts", IEEE Sensors Journal, Vol. 6, No. 2, pp. 406-411, April
2006. (SCI, EI, 0.5)
106.
C. L. Hsu, Y. R. Lin, S. J. Chang, T. H. Lu, T. S. Lin, S. Y. Tsai and I. C.
Chen, "Influence of the formation of the second phase in ZnO/Ga nanowire
9
systems", J. Electrochem. Soc., Vol. 153, No. 4, pp. G333-G336, April 2005.
(SCI, EI, 1.0)
107.
Y. D. Jhou, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chang, P. C. Chen, H.
Hung, C. L. Yu, S. M. Wang and M. H. Wu, "High UV/visible rejection contrast
AlGaN/GaN MIS photodetectors", Microelectron. Journal, Vol. 37, No. 4, pp.
328-331, April 2006. (SCI, EI, 0.5)
108.
P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, C. L. Yu, B. R. Huang and P.
C. Chen, "High UV/visible rejection contrast AlGaN/GaN MIS photodetectors",
Thin Solid Films, Vol. 498, No. 1-2, pp. 133-136, March 2006. (SCI, EI, 0.5)
109.
P. C. Chen, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chang and B. R. Huang,
"High hole concentration of p-type InGaN epitaxial layers grown by MOCVD",
Thin Solid Films, Vol. 498, No. 1-2, pp. 113-117, March 2006. (SCI, EI, 0.5)
110.
Y. K. Su, S. H. Hsu, C. C. Sio, W. C. Chen and S. J. Chang, "DC and 1/f
noise characteristics of InGaP/InGaAsN/GaAs double heterojunction bipolar
transistors", Semicond. Sci. Technol., Vol. 21, No. 2, pp. 167-170, February 2006.
(SCI, EI, 0.5)
111.
J. D. Hwang, G. H. Yang, C. C. Lin and S. J. Chang, "Nonalloyed Ti/indium
tin oxide and Ti ohmic contacts to n-type GaN using plasma pre-treatment",
Solid State Electron., Vol. 50, No. 2, pp. 297-299, February 2006. (SCI, EI, 1.0)
112.
K. S. Ramaiah, Y. K. Su, S. J. Chang and C. H. Chen, "A comparative study
of blue, green and yellow light emitting diode structures grown by metal organic
chemical vapor deposition", Solid State Electron., Vol. 50, No. 2, pp. 119-124,
February 2006. (SCI, EI, 0.5)
113.
S. H. Hsu, Y. K. Su, S. J. Chang, W. C. Chen and H. L. Tsai, "InGaAsN
metal-semiconductor-metal
photodetectors
with
modulation-doped
heterostructures", IEEE Photon. Technol. Lett., Vol. 18, No. 3, pp. 547-579,
February 2006. (SCI, EI, 0.5)
114.
S. J. Chang, H. S. Hou and Y. K. Su, "Automated passive filter synthesis
using a novel tree representation and genetic programming", IEEE Tran.
Evolutionary Computation, Vol. 10, No. 1, pp. 93-100, February 2006. (SCI, EI,
0.5)
115.
Y. K. Su, H. S. Hou and S. J. Chang, "Practical impedance matching using
genetic programming", Microwave Optical Technol. Lett., Vol. 48, No. 2, pp.
375-377, February 2006. (SCI, EI, 0.5)
116.
C. H. Liu, T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P.
Chang, J. J. Tang and B. R. Huang, "Photo-assisted thermally oxidized GaAs
insulator layers deposited by photo-CVD", Surface & Coatings Technol., Vol.
200, No. 10, pp. 3250-3253, February 2006. (SCI, EI, 0.5)
117.
M. C. Wei, S. J. Chang, C. Y. Tsai, C. H. Liu and S. C. Chen, "SiNx
deposited by in-line PECVD for multi-crystalline silicon solar cells", Solar
Energy, Vol. 80, No. 2, pp. 215-219, February 2006. (SCI, EI, 1.0)
118.
S. J. Chang, T. K. Lin, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M.
Chang, J. J. Tang and B. R. Huang, "Homoepitaxial ZnSe MSM photodetectors
10
with various transparent electrodes", Mater. Sci. Eng. B, Vol. 127, No. 2-3, pp.
164-168, February 2006. (SCI, EI, 0.5)
119.
C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin, C. C. Wong, H. L.
Liu, S. P. Chang and J. J. Tang, "Room temperature photo-CVD SiO2 layers on
AlGaN and AlGaN/GaN MOS-HFTEs", Phys. Status Solidi A, Vol. 203, No. 2,
pp. 404-409, February 2006. (SCI, EI, 0.5)
120.
C. L. Hsu, S. J. Chang, Y. R. Lin, J. M. Wu, T. S. Lin, S. Y. Tsai and I. C.
Chen, "Indium-diffused ZnO nanowires synthesized on ITO-buffered Si
substrate", Nanotechnol., Vol. 17, No. 2, pp. 516-519, January 2006. (SCI, EI,
1.0)
121.
S. H. Yang, T. J. Hsueh and S. J. Chang, "Effect of ZnO buffer layer on the
cathodoluminescence of ZnGa2O4/ZnO phosphor screen for FED", J. Crystal
Growth, Vol. 287, No. 1, pp. 194-198, January 2006. (SCI, EI, 1.0)
122.
S. L. Wu, Y. P. Wang and S. J. Chang, "Controlled misfit dislocation
technology in strained silicon MOSFETs", Semicond. Sci. Technol., Vol. 21, No.
1, pp. 44-47, January 2006. (SCI, EI, 1.0)
123.
W. S. Chen, S. C. Shei, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, Y. C.
Lin, C. S. Chang, T. K. Ko, Y. P. Hsu and C. F. Shen, "Rapid thermal annealed
InGaN/GaN flip-chip LEDs", IEEE Tran. Electron. Dev., Vol. 53, No. 1, pp.
32-37, January 2006. (SCI, EI, 0.5)
124.
C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, S. C. Chen, C. S. Chang, T.
K. Lin, H. L. Liu and J. J. Tang, "GaN MSM UV photodetectors with titanium
tungsten transparent electrodes", IEEE Tran. Electron. Dev., Vol. 53, No. 1, pp.
38-42, January 2006. (SCI, EI, 0.5)
125.
S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen and C. W. Liu,
"Enhanced CMOS performances using substrate strained-SiGe and mechanical
strained-Si technology", IEEE Electron. Dev. Lett., Vol. 27, No. 1, pp. 46-48,
January 2006. (SCI, EI, 1.0)
126.
H. C. Yu, J. S. Wang, Y. K. Su, S. J. Chang, F. I. Lai, Y. H. Chang, H. C.
Kuo, C. P. Sung, H. P. D. Yang, K. F. Lin, J. M. Wang, J. Y. Chi, R. S. Hsiao and
S. Mikhrin, "1.3-m InAs-InGaAs quantum-dot vertical-cavity surface-emitting
laser with fully doped DBRs grown by MBE", IEEE Photon. Technol. Lett., Vol.
18, No. 2, pp. 418-420, January 2006. (SCI, EI, 0.5)
127.
S. C. Hung, Y. K. Su, S. J. Chang, L. W. Ji, D. S. Shen and C. H. Huang,
"InGaN/GaN MQD p-n junction photodiodes", Physica E, Vol. 30, No. 1-2, pp.
13-16, December 2005. (SCI, EI, 0.5)
128.
H. S. Hou, S. J. Chang and Y. K. Su, "Tolerance design of passive filter
circuits using genetic programming", IEICE Tran. Electron., Vol. E88C, No. 12,
pp. 2388-2390, December 2005. (SCI, EI, 0.5)
129.
C. H. Kuo, S. J. Chang and S. C. Chen, "Nitride-based LEDs with ITO on
nanostructured silicon contact layers", J. Crystal Growth, Vol. 258, No. 3, pp.
295-299, December 2005. (SCI, EI, 1.0)
130.
J. C. Lin, Y. K. Su, S. J. Chang, W. R. Chen, R. Y. Chen, Y. C. Cheng and W.
11
J. Lin, "Activation energy of n-GaN epitaxial layers grown on vicinal-cut
sapphire substrates", J. Crystal Growth, Vol. 258, No. 4, pp. 481-485, December
2005. (SCI, EI, 0.5)
131.
Y. K. Su, S. J. Chang, S. C. Wei, R. W. Chuang, S. M. Chen and W. L. Li,
"Nitride-based LEDs with n--GaN current spreading Layers", IEEE Electron.
Dev. Lett., Vol. 26, No. 12, pp. 891-893, December 2005. (SCI, EI, 0.33)
132.
C. L. Hsu, S. J. Chang, H. C. Hung, Y. R. Lin, C. J. Huang, Y. K. Tseng and
I. C. Chen, "Vertical single-crystal ZnO nanowires grown on ZnO:Ga/glass
templates", IEEE Tran. Nanotechnol., Vol. 4, No. 6, pp. 649-654, December
2005. (SCI, EI, 1.0)
133.
Y. P. Wang, S. L. Wu and S. J. Chang, "Investigation of transport
mechanism for strained Si n metal-oxide-semiconductor field-effect transistor
grown on multi-layer substrate", Jpn. J. Appl. Phys. Lett., Vol. 44, No. 51, pp.
L1560-L1562, December 2005. (SCI, EI, 1.0)
134.
C. L. Hsu, S. J. Chang, H. C. Hung, Y. R. Lin, T. H. Lu, Y. K. Tseng and I.
C. Chen, "Selective growth of vertical ZnO nanowires on ZnO:Ga/Si3N4/SiO2/Si
templates", J. Vaccum Sci. Technol. B, Vol. 23, No. 6, pp. 2292-2296,
November-December 2005. (SCI, EI, 1.0)
135.
L. W. Ji, T. H. Fang, S. C. Hung, Y. K. Su, S. J. Chang and R. W. Chuang,
"Ultra small self-organized nitride nanotips", J. Vaccum Sci. Technol. B, Vol. 23,
No. 6, pp. 2496-2498, November-December 2005. (SCI, EI, 0.5)
136.
C. L. Hsu, S. J. Chang, Y. R. Lin, P. C. Li, T. S. Lin, S. Y. Tsai, T. H. Lu and
I. C. Chen, "Ultraviolet photodetectors with low temperature synthesized vertical
ZnO nanowires", Chem. Phys. Lett., Vol. 416, No. 1-3, pp. 75-78, November
2005. (SCI, EI, 1.0)
137.
S. H. Yang, T. J. Hsueh and S. J. Chang, "Cathodoluminescence of a white
ZnGa2O4/ZnO phosphor screen", J. Electrochem. Soc., Vol. 152, No. 11, pp.
H191-H195, November 2005. (SCI, EI, 1.0)
138.
K. T. Liu, Y. K. Su, S. J. Chang and Y. Horikoshi, "Magnesium/nitrogen and
beryllium/nitrogen co-implantation into GaN", J. Appl. Phys., Vol. 98, No. 7, Art.
no. 073702, October 2005. (SCI, EI, 0.5)
139.
C. K. Wang, T. K. Ko, C. S. Chang, S. J. Chang, Y. K. Su, T. C. Wen, C. H.
Kuo and Y. Z. Chiou, "The thickness effect of p-AlGaN blocking layer in UV-A
bandpass photodetectors", IEEE Photon. Technol. Lett., Vol. 17, No. 10, pp.
2161-2163, October 2005. (SCI, EI, 0.5)
140.
S. C. Hung, Y. K. Su, T. H. Fang, S. J. Chang and L. W. Ji, "Buckling
instabilities in GaN nanotubes under uniaxial compression", Nanotechnol., Vol.
16, No. 10, pp. 2203-2208, October 2005. (SCI, EI, 0.5)
141.
C. H. Kuo, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai and P. T.
Wang, "Nitride-based light-emitting diodes with p-AlInGaN surface layers",
IEEE Tran. Electron. Dev., Vol. 52, No. 10, pp. 2346-2349, October 2005. (SCI,
EI, 1.0)
142.
J. L. Yang, J. S. Chen and S. J. Chang, "Presence of nanosize Au dots on the
12
formation of ohmic contact for the Ni-Au base film to p-GaN", J. Vac. Sci.
Technol. B, Vol. 23, No. 5, pp. 2127-2131, September-October 2005. (SCI, EI,
1.0)
143.
Y. P. Wang, S. L. Wu and S. J. Chang, "Optimized Si-cap layer thickness for
tensile-strained-Si/compressively strained SiGe dual-channel transistors in 0.13
m complementary metal oxide semiconductor technology", Jpn. J. Appl. Phys.
Lett., Vol. 44, No. 37-41, pp. L1248-L1251, September 2005. (SCI, EI, 1.0)
144.
Y. T. Nien, Y. L. Chen, I. G. Chen, C. S. Hwang, Y. K. Su, S. J. Chang and F.
S. Juang, "Synthesis of nano-scaled yttrium aluminum garnet phosphor by
co-precipitation method with HMDS treatment", Mater. Chem. Phys., Vol. 93,
No. 1, pp. 79-83, September 2005. (SCI, EI, 0.5)
145.
T. K. Ko, S. J. Chang, Y. K. Su, M. L. Lee, C. S. Chang, Y. C. Lin, S. C.
Shei, J. K. Sheu, W. S. Chen and C. F. Shen, "AlGaN-GaN Schottky-barrier
photodetectors with LT GaN cap layers", J. Crystal Growth, Vol. 283, No. 1-2,
pp. 68-71, September 2005. (SCI, EI, 0.5)
146.
S. J. Chang, S. C. Wei, Y. K. Su, R. W. Chuang, S. M. Chen and Li,
"Nitride-based LEDs with MQW active regions grown by different temperature
profiles", IEEE Photon. Technol. Lett., Vol. 17, No. 9, pp. 1806-1808, September
2005. (SCI, EI, 0.33)
147.
Y. P. Hsu, S. J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, C. H.
Kuo and C. S. Chang, "InGaN-GaN MQW LEDs with Si treatment", IEEE
Photon. Technol. Lett., Vol. 17, No. 8, pp. 1620-1622, August 2005. (SCI, EI,
0.5)
148.
T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita and Y. Horikoshi,
"ZnO MSM photodetectors with Ru contact electrodes", J. Crystal Growth, Vol.
281, No. 2-4, pp. 513-517, August 2005. (SCI, EI, 0.5)
149.
C. I. Lee, Y. T. Lu, Y. K. Su, S. J. Chang, J. S. Hwang and C. C. Chang,
"Optical transitions in a self-assembled Ge quantum dot/Si-superlattice measured
by photoreflectance spectroscopy", Jpn. J. Appl. Phys., Vol. 44, No. 33-36, pp.
L1045-L-1047, August 2005. (SCI, EI, 0.5)
150.
Y. D. Jhou, C. H. Chen, R. W. Chuang, S. J. Chang, Y. K. Su, P. C. Chang, P.
C. Chen, H. Hung, S. M. Wang and C. L. Yu, "Nitride-based light emitting diode
and photodetector dual function devices with InGaN/GaN multiple quantum well
structures", Solid State Electron., Vol. 49, No. 8, pp. 1347-1351, August 2005.
(SCI, EI, 0.33)
151.
K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang and Y. Horikoshi, "C and N
co-implantation in Be-doped GaN", Semicond. Sci. Technol., Vol. 20, No. 8, pp.
740-744, August 2005. (SCI, EI, 0.33)
152.
C. L. Hsu, Y. R. Lin, S. J. Chang, T. S. Lin, S. Y. Tsai and I. C. Chen,
"Vertical ZnO/ZnGa2O4 core-shell nanorods grown on ZnO/glass templates by
reactive evaporation", Chem. Phys. Lett., Vol. 411, No. 1-3, pp. 221-224, August
2005. (SCI, EI, 1.0)
153.
C. H. Liu, T. K. Lin and S. J. Chang, "GaAs MOS capacitors with
13
photo-CVD SiO2 insulator layers", Solid State Electron., Vol. 49, No. 7, pp.
1077-1080, July 2005. (SCI, EI, 1.0)
154.
C. L. Hsu, S. J. Chang, Y. R. Lin, S. Y. Tsai and I. C. Chen, "Vertically well
aligned P-doped ZnO nanowires synthesized on ZnO-Ga/glass templates", Chem.
Commun., Issue 28, pp. 3571-3573, July 2005. (SCI, EI, 1.0)
155.
S. J. Chang, H. C. Yu, Y. K. Su, I. L. Chen, T. D. Lee, C. M. Lu, C. H.
Chiou, Z. H. Lee, H. P. Yang and C. P. Sung, "Highly strained InGaAs oxide
confined VCSELs emitting in 1.25 µm", Mater. Sci. Eng. B, Vol. 121, No. 1-2,
pp. 60-63, July 2005. (SCI, EI, 0.5)
156.
S. C. Hung, Y. K. Su, S. J. Chang, S. C. Chen, T. H. Fang and L. W. Ji,
"GaN nanocolumns formed by inductively coupled plasmas etching", Physica E,
Vol. 28, No. 2, pp. 115-120, July 2005. (SCI, EI, 0.5)
157.
C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W.
Kuo, S. J. Chang and Y. K. Su, "Enhanced output power in GaN-based LEDs
with naturally textured surface grown by MOCVD", IEEE. Electron. Dev. Lett.,
Vol. 26, No. 7, pp. 464-466, July 2005. (SCI, EI, 0.5)
158.
Y. K. Su, S. J. Chang, S. C. Wei, S. M. Chen and W. L. Li, "ESD
engineering of nitride-based LEDs", IEEE Tran. Dev. Mater. Reliability, Vol.
5, No. 2, pp. 277-281, June 2005. (SCI, EI, 0.5)
159.
S. J. Chang, C. K. Wang, Y. K. Su, C. S. Chang, T. K. Lin, T. K. Ko and H.
L. Liu, "GaN MIS capacitors with photo-CVD SiNxOy insulating layers", J.
Electrochem. Soc., Vol. 152, No. 6, pp. G423-G426, June 2005. (SCI, EI, 0.5)
160.
H. S. Hou, S. J. Chang and Y. K. Su, "Practical passive filter synthesis using
genetic programming", IEICE Tran. Electron., Vol. E88C, No. 6, pp. 1180-1185,
June 2005. (SCI, EI, 0.5)
161.
S. C. Wei, Y. K. Su, S. J. Chang, S. M. Chen and W. L. Li, "Nitride-based
MQW LEDs with multiple GaN-SiN nucleation layers", IEEE Tran. Electron.
Dev., Vol. 52, No. 6, pp. 1104-1109, June 2005. (SCI, EI, 0.5)
162.
C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, T. K. Lin, H.
L. Liu and J. J. Tang, "High detectivity GaN metal-semiconductor-metal UV
photodetectors with transparent tungsten electrodes", Semicond. Sci. Technol.,
Vol. 20, No. 6, pp. 485-489, June 2005. (SCI, EI, 0.5)
163.
C. K. Wang, R. W. Chuang, S. J. Chang, Y. K. Su, S. C. Wei, T. K. Lin, T. K.
Ko, Y. Z. Chiou and J. J. Tang, "High temperature and high frequency
characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor
deposition SiO2 layer", Mater. Sci. Eng. B, Vol. 119, No. 2, pp. 25-28, May 2005.
(SCI, EI, 0.5)
164.
S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P.
Hsu, S. C. Shei and H. M. Lo, "Nitride-based flip-chip ITO LEDs", IEEE Tran.
Adv. Packaging, Vol. 28, No. 2, pp. 273-277, May 2005. (SCI, EI, 0.33)
165.
C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "Ka band 1W
PHEMT MMIC power amplifiers on 2mil-thick GaAs substrates", Microwave
Optical Technol. Lett. , Vol. 45, No. 3, pp. 181-185, May 2005. (SCI, EI, 1.0)
14
166.
S. C. Hung, Y. K. Su, S. J. Chang, S. C. Chen, L. W. Ji, T. H. Fang, L. W. Tu
and M. Chen, "Self-formation of GaN hollow nanocolumns by inductively
coupled plasma etching", Appl. Phys. A, Vol. 80, No. 8, pp. 1607-1610, May
2005. (SCI, EI, 0.5)
167.
T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M.
Chang, J. J. Tang and B. R. Huang, "ZnSe MSM photodetectors prepared on
GaAs and ZnSe substrates", Mater. Sci. Eng. B, Vol. 119, No. 2, pp. 202-205,
May 2005. (SCI, EI, 0.5)
168.
C. L. Hsu, S. J. Chang, H. C. Hung, Y. R. Lin, C. J. Huang, Y. K. Tseng, and
I. C. Chen, "Well-aligned, vertically Al-doped ZnO nanowires synthesized on
ZnO:Ga/glass templates", J. Electrochem. Soc., Vol. 152, No. 5, pp. G378-G381,
May 2005. (SCI, EI, 1.0)
169.
J. D. Hwang, Z. Y. Lai, C. Y. Wu and S. J. Chang, "Enhancing P-type
conductivity in Mg-doped GaN using oxygen and nitrogen plasma activation",
Jpn. J. Appl. Phys., Vol. 44, No. 4A, pp. 1726-1729, April 2005. (SCI, EI, 1.0)
170.
M. L. Tu, Y. K. Su, S. J. Chang, T. H. Fang, W. H. Chen and H. Yang,
"Improved performance of 2,3-dibutoxy-1,4-phenylene vinylene based polymer
light-emitting diodes by thermal annealing", Jpn. J. Appl. Phys., Vol. 44, No. 4B,
pp. 2787-2789, April 2005. (SCI, EI, 0.5)
171.
C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei and H.
M. Lo, "Nitride-based power chip with indium-tin-oxide p-contact and Al
back-side reflector", Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2462-2464, April
2005. (SCI, EI, 0.5)
172.
C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. H. Kuo, C. S. Chang, T.
K. Lin, T. K. Ko and J. J. Tang, "Noise characteristics of AlGaN/GaN/AlGaN
double heterostructure metal-oxide-semiconductor heterostructure field effect
transistors with photochemical vapor deposition SiO2 layer", Jpn. J. Appl. Phys.,
Vol. 44, No. 4B, pp. 2458-2461, April 2005. (SCI, EI, 0.5)
173.
S. H. Hsu, Y. K. Su, R. W. Chuang, S. J. Chang, W. C. Chen and W. R. Chen,
"Study of electronic properties by persistent photoconductivity measurement in
GaxIn1-xNyAs1-y grown by MOCVD", Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp.
2454-2457, April 2005. (SCI, EI, 0.33)
174.
C. L. Yu, C. H. Chen, S. J. Chang, Y. K. Su, S. C. Chen, P. C. Chang, P. C.
Chen, M. H. Wu, H. C. Chen and K. C. Su, "In0.37Ga0.63N
metal-semiconductor-metal photodetectors with recessed electrodes", IEEE
Photon. Technol. Lett., Vol. 17, No. 4, pp. 875-877, April 2005. (SCI, EI, 0.5)
175.
W. S. Chen, S. J. Chang, Y. K. Su, C. T. Lee, R. L. Wang, C. H. Kuo and S.
C. Chen, "AlxGa1-xN/GaN HEMTs with various Al mole fractions in AlGaN
barrier", J. Crystal Growth, Vol. 275, No. 3-4, pp. 398-403, March 2005. (SCI,
EI, 0.5)
176.
Y. R. Lin, Y. K. Tseng, S. S. Yang, S. T. Wu, C. L. Hsu and S. J. Chang,
"Buffer-facilitated epitaxial growth of ZnO nanowire", Crystal Growth & Design,
Vol. 5, No. 2, pp. 579-583, March 2005. (SCI, EI, 1.0)
15
177.
Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. H. Kuo, C. S. Chang and S.
C. Shei, "ICP etching of sapphire substrates", Optical Mater., Vol. 27, No. 6, pp.
1171-1174, March 2005. (SCI, EI, 0.5)
178.
S. M. Wang, C. H. Chen, S. J. Chang, Y. K. Su and B. R. Huang,
"Mg-doped GaN activated with Ni catalysts", Mater. Sci. Eng. B, Vol. 117, No. 2,
pp. 107-111, March 2005. (SCI, EI, 0.5)
179.
Y. K. Su, P. C. Chang, C. H. Chen, S. J. Chang, C. L. Yu, C. T. Lee, H. Y.
Lee, J. Gong, P. C. Chen and C. H. Wang, "Nitride-based MSM UV
photodetectors with photo-CVD annealed Schottky contacts", Solid State
Electron., Vol. 49, No. 3, pp. 459-463, March 2005. (SCI, EI, 0.33)
180.
C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A Ku-band
four-stage temperature compensated PHEMT MMIC power amplifier",
Microwave Optical Technol. Lett., Vol. 44, No. 5, pp. 480-485, March 2005. (SCI,
EI, 1.0)
181.
J. L. Yang, J. S. Chen and S. J. Chang, "Effect of Au distribution in NiO/Au
film on the ohmic contact formation to p-type GaN", J. Materials Research, Vol.
20, No. 2, pp.456-463, February, 2005. (SCI, EI, 1.0)
182.
Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, "SiGe/Si
PMOSFET using graded channel technique", Mater. Sci. Semicond. Processing,
Vol. 8, No. 1-3, pp. 367-370, February-June 2005. (SCI, EI, 1.0).
183.
P. W. Chien, S. L. Wu, S. J. Chang, S. Koh and Y. Shiraki,
"High-performance SiGe heterostructure FET grown on silicon-on-insulator ",
Mater. Sci. Semicond. Processing, Vol. 8, No. 1-3, pp. 367-370, February-June
2005. (SCI, EI, 1.0).
184.
C. H. Lee, S. L. Wu and S. J. Chang, "SiGe heterostructure field-effect
transistor with ICP mesa treatments", Mater. Sci. Semicond. Processing, Vol. 8,
No. 1-3, pp. 371-375, February-June 2005. (SCI, EI, 1.0)
185.
T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, C. M. Chang and
B. R. Huang, "ZnSe homoepitaxial MSM photodetectors with transparent ITO
contact electrodes", IEEE Tran. Electron. Dev., Vol. 52, No. 1, pp. 121-123,
January 2005. (SCI, EI, 0.5)
186.
J. D. Hwang, G. H. Yang, W. T. Chang, C. C. Lin, R. W. Chuang and S. J.
Chang, "A novel transparent ohmic contact of indium tin oxide to n-type GaN",
Microelectron. Eng., Vol. 77, No. 1, pp. 71-75, January 2005. (SCI, EI, 0.5)
187.
T. M. Kuan, S. J. Chang, Y. K. Su, J. C. Lin, C. W. H. Lan, J. A. Bardwell,
H. Tang, W. J. Lin and Y. T. Cherng, "High performance GaN/InGaN HFETs on
Mg-doped GaN carrier blocking layers", J. Cryst. Growth, Vol. 272, No. 1-4, pp.
300-304, December 2004. (SCI, EI, 0.5)
188.
S. H. Hsu, Y. K. Su, S. J. Chang, K. I. Lin, W. H. Lan, P. S. Wu and C. H.
Wu, "Temperature dependence of the optical properties on GaInNP", J. Cryst.
Growth, Vol. 272, No. 1-4, pp. 765-771, December 2004. (SCI, EI, 0.5)
189.
P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, C. L. Yu, P. C. Chen and C.
H. Wang, "AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au
16
semi-transparent contacts", Semicond. Sci. Technol., Vol. 19, No. 12, pp.
1354-1357, December 2004. (SCI, EI, 0.5)
190.
C. L. Hsu, S. S. Yang, Y. K. Tseng, I. C. Chen, Y. R. Lin, S. J. Chang and S.
T. Wu, "A new and simple means for self-assembled nanostructure: facilitated by
buffer layer", J. Phys. Chem. B, Vol. 108, No. 49, pp. 18799-18803, December
2004. (SCI, 1.0)
191.
X. H. Wang, X. W. Fan; C. X. Shan; Z. Z. Zhang; J. Y. Zhang; Y. M. Lu; Y.
C. Liu; D. Z. Shen; Y. K. Su and S. J. Chang, "MOVPE growth of ZnSe films on
ZnO/Si templates", Mater. Chem. Phys., Vol. 88, No. 1, pp. 102-105, November
2004. (SCI, EI, 0.5)
192.
L. W. Ji, Y. K. Su, S. J. Chang, S. C. Hung, C. S. Chang, and L. W. Wu,
"Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers", IEE
Proc. - Circuit, Devices & Systems, Vol. 151, No. 5, pp. 486-488, October 2004.
(SCI, EI, 0.5)
193.
K. T. Liu, Y. K. Su, S. J. Chang, K. Onomitsu and Y. Horikoshi, "Donor
isoelectronic trap pair luminescence from Mg and P co-implanted GaN grown by
MOCVD", Phys. Stat. Sol. B, Vol. 241, No. 12, pp. 2003-2007, October 2004.
(SCI, EI, 0.5)
194.
T. C. Wen, S. J. Chang, C. T. Lee, W. C. Lai and J. K. Sheu, "Nitride-based
LEDs with modulation doped Al0.12Ga0.88N/GaN superlattice structures", IEEE
Tran. Electron. Dev., Vol. 51, No. 10, pp. 1743-1746, October 2004. (SCI, EI,
0.5)
195.
C. H. Lin, Y. K. Su, Y. Z. Juang, R. W. Chung, S. J. Chang, J. F. Chen and C.
H. Tu, "The effect of geometry on the noise characterization of SiGe HBTs and
optimized device sizes for the design of low noise amplifiers", IEEE Tran.
Microwave Theory Technol., Vol. 52, No. 9, pp. 2153-2162, September 2004.
(SCI, EI, 0.25)
196.
C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A Ka-band
PHEMT diode double balanced star mixer MMIC", Microwave Optical Technol.
Lett., Vol. 42, No. 6, pp. 455-458, September 2004. (SCI, EI, 1.0)
197.
C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, L. W. Wu and C. C. Lin,
"Improved light output power of InGaN/GaN MQW LEDs by lower temperature
p-GaN rough surface", Mater. Sci. Eng. B, Vol. 112, No. 1, pp. 10-13, September
2004. (SCI, EI, 0.33)
198.
C. K. Wang, S. J. Chang, Y. K. Su, C. S. Chang, Y. Z. Chiou, C. H. Kuo, T.
K. Lin, T. K. Ko, and J. J. Tang, "GaN MSM photodetectors with TiW
transparent electrodes", Mater. Sci. Eng. B, Vol. 112, No. 1, pp. 25-29,
September 2004. (SCI, EI, 0.5)
199.
M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang, W. C. Lai and G. C. Chi,
"Reducetion of dark current in AlGaN/GaN Schottky barrier photodetectors with
a low temperature grown GaN cap layer", IEEE Electron Dev. Lett., Vol. 25, No.
9, pp. 593-595, September 2004. (SCI, EI, 0.5)
200.
C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, C. H. Kuo, J. M. Tsai and C.
17
C. Lin, "InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers",
Mater. Sci. Eng. B, Vol. 111, No. 2-3, pp. 214-217, August 2004. (SCI, EI, 0.33)
201.
C. H. Lee, S. L. Wu and S. J. Chang, "Improved performance of SiGe
doped-channel field-effect transistors using inductively coupled plasma etching",
Semicond. Sci. Technol., Vol. 19, No. 8, pp. 1053-1056, August 2004. (SCI, EI,
1.0)
202.
C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A
three-stage Ka band PHEMT wideband amplifier MMIC", Microwave and
Optical Technol. Lett., Vol. 42, No. 4, pp. 277-280, August 2004. (SCI, EI, 1.0)
203.
C. H. Wang, S. J. Chang and P. C. Chang, "Effect of sintering conditions on
characteristics of PbTiO3-PbZrO3-Pb(Mg1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3", Mater.
Sci. Eng. B, Vol. 111, No. 2-3, pp. 124-130, August 2004. (SCI, EI, 1.0)
204.
Y. K. Su, H. C. Yu, S. J. Chang, C. T. Lee, J. S. Wang, A. R. Kovsh, Y. T.
Wu, K. F. Lin and C. Y. Huang, "1.3m InAs quantum dot resonant-cavity light
emitting diodes", Mater. Sci. Eng. B, Vol. 110, No. 3, pp. 256-259, July 2004.
(SCI, EI, 0.33)
205.
Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W. H. Lan, Y. T.
Cherng and S. C. Chen, "Nitride-based Schottky diodes and HFETs fabricated by
photo-enhanced chemical wet etching", Mater. Sci. Eng. B, Vol. 110, No. 3, pp.
260-264, July 2004. (SCI, EI, 0.5)
206.
Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W. H. Lan, Y. T.
Cherng and S. C. Chen, "Nitride-based HFETs with carrier confinement layers",
Mater. Sci. Eng. B, Vol. 110, No. 2, pp. 172-176, July 2004. (SCI, EI, 0.5)
207.
K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su and S. J.
Chang, "Improved crystal quality for MBE grown GaN layers", Mater. Chem.
Phys., Vol. 86, No. 1, pp. 161-164, July 2004. (SCI, EI, 0.5)
208.
C. H. Wu, Y. K. Su, S. J. Chang, Y. S. Huang and Y. P. Hsu, "Device
characteristics of the GaAs-based heterojunction bipolar transistors using
InGaAs/GaAsP strain compensated layers as base material", Semicond. Sci.
Technol , Vol. 19, No. 7, pp. 828-832, July 2004. (SCI, EI, 0.5)
209.
K. S. Ramaiah, Y. K. Su, S. J. Chang, C. H. Chen, F. S. Juang, H. P. Liu and
I. G. Chen, "Studies of InGaN/GaN multiquantum-well green-light-emitting
diodes grown by metalorganic chemical vapor deposition", Appl. Phys. Lett., Vol.
85, No. 3, pp. 401-403, July 2004. (SCI, EI, 0.5)
210.
S. L. Wu, P. W. Chien, S. J. Chang, S. Koh and Y. Shiraki, "Influences of
delta-doping position on the characteristics of SiGe-Si DCFETs", IEEE
Electron.Dev. Lett., Vol. 25, No. 7, pp. 477-479, July 2004. (SCI, EI, 1.0)
211.
S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu
and C. T. Lee, "Nitride-based LEDs with 800oC-grown p-AlInGaN/GaN double
cap layers", IEEE Photon. Technol. Lett., Vol. 16, No. 6, pp. 1447-1449, June
2004. (SCI, EI, 0.33)
212.
C. H. Liu, C. K. Wang, S. J. Chang and Y. K. Su, "High transconductance
nitride-based MOSHFETs", Mater. Sci. Eng. B, Vol. 110, No. 1, pp. 32-33, June
18
2004. (SCI, EI, 0.5)
213.
L. W. Ji, Y. K. Su, S. J. Chang, S. T. Tsai, S. C. Hung, R. W. Chuang, T. H.
Fang and T. Y. Tsai, "Growth of InGaN self-assembled quantum dots and their
application to photodetectors", J. Vac. Sci. Technol. A, Vol. 22, No. 3, pp.
792-795, May/June 2004. (SCI, EI, 0.25)
214.
C. H. Chen, S. J. Chang and Y. K. Su, "InGaN/AlGaN near-ultraviolet
multiple quantum well light-emitting diodes with p-InGaN tunneling contact
layer", J. Vac. Sci. Technol. A, Vol. 22, No. 3, pp. 1020-1022, May/June 2004.
(SCI, EI, 0.5)
215.
K. S. Ramaiah, Y. K. Su, S. J. Chang, B. Kerr, H. P. Liu and I. G. Chen,
"Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes
grown by metal organic chemical vapor deposition", Appl. Phys. Lett., Vol. 84,
No. 17, pp. 3307-3309, April 2004. (SCI, EI, 0.5)
216.
P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H.
Hung, C. M. Wang and B. R. Huang, "InGaN/GaN MQW MIS photodetectors
with photo-CVD SiO2 layers", Jpn. J. Appl. Phys., Vol. 43, No. 4B, pp.
2008-2010, April 2004. (SCI, EI, 0.5)
217.
H. C. Yu, S. J. Chang, Y. K. Su, C. P. Sung, H. P. Yang, C. Y. Huang, Y. W.
Lin, J. M. Wang, F. I. Lai, H. C. Kuo, "Improvement of high speed oxide
confined vertical cavity surface emitting lasers", Jpn. J. Appl. Phys., Vol. 43, No.
4B, pp. 1947-1950, April 2004. (SCI, EI, 0.5)
218.
C. H. Wu, Y. K. Su, S. C. Wei, S. J. Chang, C. C. Sio and S. C. Chen,
"Reduction of turn-on voltage in GaInNAs/InGaAs base double heterojunction
bipolar transistors", Jpn. J. Appl. Phys., Vol. 43, No. 4B, pp. 1919-1921, April
2004. (SCI, EI, 0.5)
219.
S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y.
P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke and J. K. Sheu, "Nitride-based
LEDs with an SPS tunneling contact layer and an ITO transparent contact",
IEEE Photon. Technol. Lett., Vol. 16, No. 4, pp. 1002-1004, April 2004. (SCI, EI,
0.33)
220.
Y. K. Su, C. H. Wu, Y. S. Huang, Y. P. Hsu, W. C.Chen, S. H. Hsu and S. J.
Chang, "Piezoreflectance and contactless electroreflectance spectra of an
optoelectronic material: GaInNP grown on GaAs substrates", J. Crystal Growth,
Vol. 264, No. 1-3, pp. 1919-1921, March 2004. (SCI, EI, 0.5)
221.
C. H. Liu, S. J. Chang, J. F. Chen, J. S. Lee, S. C. Chen and U. H. Liaw,
"Electrical and reliability characteristics of oxynitride gate dielectric grown by
diluted steam rapid thermal oxidation and annealed in nitric oxide", Mater. Sci.
Eng. B, Vol. 107, No. 3, pp. 310-316, March 2004. (SCI, EI, 0.5)
222.
C. S. Chang, S. J. Chang, Y. K. Su, C. T. Lee, Y. C. Lin, W. C. Lai, S. C.
Shei, J. C. Ke and H. M. Lo, "Nitride-based LEDs with textured side walls",
IEEE Photon. Technol. Lett., Vol. 16, No. 3, pp. 750-752, March 2004. (SCI, EI,
0.33)
223.
K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su and S. J.
19
Chang, "Modulated beam growth method for MBE grown GaN layers", J.
Crystal Growth, Vol. 263, No. 1-4, pp. 400-405, March 2004. (SCI, EI, 0.5)
224.
L. W. Ji, Y. K. Su, S. J. Chang, C. S. Chang, L. W. Wu, W. C. Lai, X. L.
Du and H. Chen, "InGaN/GaN multi-quantum dot light-emitting diodes", J.
Crystal Growth, Vol. 263, No. 1-4, pp. 114-118, March 2004. (SCI, EI, 0.5)
225.
L. W. Ji, Y. K. Su, S. J. Chang, T. H. Fang, T. C. Wen, and S. C. Hung,
"Growth of ultra small self-assembled InGaN nanotips", J. Crystal Growth, Vol.
263, No. 1-4, pp. 63-67, March 2004. (SCI, EI, 0.5)
226.
Y. K. Su, S. J. Chang, L. W. Ji, C. S. Chang, L. W. Wu, W. C. Lai, T. H.
Fang and K. T. Lam, "InGaN/GaN blue light-emitting diodes with
self-assembled quantum dots", Semicond. Sci. Technol., Vol. 19, No. 3, pp.
389-392, March 2004. (SCI, EI, 0.5)
227.
Y. K. Su, C. H. Wu, S. H. Hsu, S. J. Chang, W. C. Chen, Y. S. Huang and H.
P. Hsu, "Observation of spontaneous ordering in the optoelectronic material
GaInNP", Appl. Phys. Lett., Vol. 84, No. 8, pp. 1299-1301, February 2004. (SCI,
EI, 0.5)
228.
L. W. Ji, Y. K. Su, S. J. Chang, S. C. Hung, C. K. Wang, T. H. Fang, T. Y.
Tsai,R. Chuang, W. Su and J. C. Zhong, "InGaN metal-semiconductor-metal
photodiodes with nanostructures", Jpn. J. Appl. Phys., Vol. 43, No. 2, pp.
518-521, February 2004. (SCI, EI, 0.5)
229.
X. H. Wang, X. W. Fan, C. X. Shan, Z. Z. Zhang, W. Su, J. Y. Zhang, Y. K.
Su, S. J. Chang, Y. M. Lu, Y. C. Liu and D. Z. Shen, "Growth of ZnSe films on
ZnO-Si templates", Mater. Sci. Eng. B, Vol. 107, No. 1, pp. 84-88, February 2004.
(SCI, EI, 0.5)
230.
C. H. Liu, S. J. Chang, J. F. Chen, S. C. Chen, J. S. Lee and U. H. Liaw,
"High quality ultra thin chemical-vapor-deposited Ta2O5 capacitors prepared by
high density plasma annealing", Mater. Sci. Eng. B, Vol. 106, No. 3, pp. 234-241,
February 2004. (SCI, EI, 0.5)
231.
Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu,
C. H. Kuo, C. S. Chang and S. C. Shei, "Lateral epitaxial patterned sapphire
InGaN/GaN MQW LEDs", J. Crystal Growth., Vol. 231, No. 4, pp. 466-470,
February 2004. (SCI, EI, 0.33)
232.
C. H. Liu, L. W. Wu, S. J. Chang, J. F. Chen, U. H. Liaw and S. C. Chen,
"Ion Implantation technology for improved GaAs MESFETs performance", J.
Mater. Sci.: Mater. Electron., Vol. 15, No. 2, pp. 91-93, February 2004. (SCI, EI,
0.5)
233.
H. C. Yu, S. J. Chang, Y. K. Su, C. P. Sung, Y. W. Lin, H. P. Yang, C. Y.
Huang and J. M. Wang, "A simple process for fabrication of high speed vertical
cavity surface emitting lasers", Mater. Sci. Eng. B, Vol. 106, No. 1, pp. 101-104,
January 2004. (SCI, EI, 0.5)
234.
C. H. Kuo, S. J. Chang, Y K. Su, C. S. Chang, L. W. Wu, W. C. Lai, J. F.
Chen, J. K. Sheu, H. M. Lo and J. M. Tsai, "Nitride-based near-ultraviolet LEDs
with an ITO transparent contact", Mater. Sci. Eng. B, Vol. 106, No. 1, pp. 69-72,
20
January 2004. (SCI, EI, 0.5)
235.
S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H.
Hung, C. M. Wang and B. R. Huang, "Nitride-based LEDs with p-InGaN
capping layer", IEEE Tran. Electron. Dev., Vol. 50, No. 12, pp. 2567-2570,
December 2003. (SCI, EI, 0.5)
236.
S. J. Chang, Y. K. Su, Y. C. Lin, R. W. Chuang, C. S. Chang, J. K. Sheu, T.
C. Wen, S. C. Shei, C. W. Kuo and D. H. Fang, "MOCVD growth of
InGaN/GaN light emitting diodes on patterned sapphire substrates", Phys. Stat.
Sol. C, Vol. 0, No. 7, pp. 2253-2256, December 2003. (SCI, EI, 0.33)
237.
C. H. Chen, S. J. Chang and Y. K. Su, "InGaN/GaN multiple-quantum-well
dual-wavelength near-white light emitting diodes", Phys. Stat. Sol. C, Vol. 0, No.
7, pp. 2257-2260, December 2003. (SCI, EI, 0.5)
238.
C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin and B. R. Huang,
"Low interface state density AlGaN/GaN MOSHFETs with photochemical vapor
deposition SiO2 layers", Phys. Stat. Sol. C, Vol. 0, No. 7, pp. 2355-2359,
December 2003. (SCI, EI, 0.5)
239.
Y. M. Lin, S. L. Wu, S. J. Chang, S. Koh and Y. Shiraki, "P-Type
enhancement mode SiGe doped channel field effect transistor", Jpn. J. Appl.
Phys. Lett., Vol. 42, No. 12A, pp. L1422-L1424, December 2003. (SCI, EI, 1.0)
240.
C. K. Wang, T. K. Lin, Y. Z. Chiou, S. J. Chang, Y. K. Su, C. H. Kuo and
T. K. Ko, "High transconductance AlGaN/GaN MOSHFETs with photo-CVD
gate oxide", Semicond. Sci. Technol., Vol. 18, No. 12, pp. 1033-1036, December
2003. (SCI, EI, 0.5)
241.
W. Su, J. C. Zhong, W. L. Liu, Y. K. Su, S. J. Chang, H. C. Yu, L. W. Ji, L.
Li and Y. J. Zhao, "Design and numerical simulation of novel DBRs", Chinese
Opt. Lett., Vol. 200, No. 1, pp. 674-676, November 2003. (SCI, EI, 0.5)
242.
C. H. Chen, S. J. Chang and Y. K. Su, "High electrostatic discharge
protection of InGaN/GaN MQW LEDs by using GaN Schottky diodes", Phys.
Stat. Sol. (a), Vol. 200, No. 1, pp. 91-94, November 2003. (SCI, EI, 0.5)
243.
C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, Y. P.
Hsu, S. C. Shei, C. M. Tsai, H. M. Lo, J. C. Ke and J. K. Sheu, "High brightness
InGaN LEDs with an ITO on n++-SPS upper contact", IEEE Tran. Electron.
Dev., Vol. 50, No. 11, pp. 2208-2212, November 2003. (SCI, EI, 0.5)
244.
C. H. Kuo, S. J. Chang, Y. K. Su, C. K. Wang, L. W. Wu J. K. Sheu, T. C.
Wen, W. C. Lai, J. M. Tsai and C. C. Lin, "Nitride-based blue LEDs with
GaN/SiN double buffer layers", Solid State Electron., Vol. 47, No. 11, pp.
2019-2022, November 2003. (SCI, EI, 0.5)
245.
S. J. Chang, T. M. Kuan, Y. K. Su, C. H. Ko, J. B. Webb, J. A. Bardwell, Y.
Liu, H. Tang, W. J. Lin, Y. T. Cherng and W. H. Lan, "Nitride-based 2DEG
photodetectors with a large AC responsivity", Solid State Electron., Vol. 47, No.
11, pp. 2023-2026, November 2003. (SCI, EI, 0.5)
246.
L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. P. Hsu, C. H. Kuo, W.
C. Lai, T. C. Wen, J. M. Tsai and J. K. Sheu, "In0.23Ga0.77N/GaN MQW LEDs
21
with a low temperature GaN cap layer", Solid State Electron., Vol. 47, No. 11,
pp. 2027-2030, November 2003. (SCI, EI, 0.33)
247.
S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H.
M. Lo, H. Y. Lin and J. C. Ke, "Highly reliable nitride based LEDs with
SPS+ITO upper contacts", IEEE J. Quan. Electron., Vol. 39, No. 11, pp.
1439-1443, November 2003. (SCI, EI, 0.33)
248.
L. W. Ji, Y. K. Su, S. J. Chang, S. H. Liu, C. K. Wang, S. T. Tsai, T. H. Fang,
L. W. Wu and Q, K. Xue, "InGaN quantum dot photodetectors", Solid State
Electron., Vol. 47, No. 10, pp. 1753-1756, October 2003. (SCI, EI, 0.5)
249.
Y. K. Su, S. C. Wei, R. L. Wang, S. J. Chang, C. H. Ko and T. M. Kuan,
"Flicker noise of GaN-based heterostructure field-effect transistors with
Si-doped AlGaN carrier injection layer", IEEE Electron. Dev. Lett., Vol. 24, No.
10, pp. 622-624, October 2003. (SCI, EI, 0.5)
250.
L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, Q. K. Xue, W. C. Lai
and Y. Z. Chiou, "A novel method to fabricate InGaN self-assembled quantum
dots by metalorganic chemical vapor deposition", Mater. Lett., Vol. 57, No.
26-27, pp. 4218-4221, September 2003. (SCI, EI, 0.5)
251.
C. H. Ko, Y K. Su, S. J. Chang, T. Y. Tsai, T. M. Kuan, W. H. Lan, J. C. Lin,
W. J. Lin, Y. T. Cherng and J. B. Webb, "Two-step epitaxial lateral overgrowth of
GaN", Mater. Chem. Phys., Vol. 82, No. 1, pp. 55-60, September 2003. (SCI, EI,
0.33)
252.
T. M. Kuan, S. J. Chang, C. H. Ko, Y. K. Su, J. B. Webb, J. A. Bardwell, Y.
Liu, H. Tang, W. J. Lin, Y. T. Cherng and W. H. Lan, "High optical gain
AlGaN/GaN 2DEG photodetectors", Jpn. J. Appl. Phys. Lett , Vol. 42, No. 9A,
pp. 5563-5564, September 2003. (SCI, EI, 0.5)
253.
S. J. Chang, Y. C. Lin, Y. K. Su, C. S. Chang, T. C. Wen, S. C. Shei, J. C. Ke,
C. W. Kuo, S. C. Chen and C. H. Liu, "Nitride-based LEDs fabricated on
patterned sapphire substrates", Solid State Electron., Vol. 47, No. 9, pp.
1539-1542, September 2003. (SCI, EI, 0.5)
254.
Y. C. Lin, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei, J. C. Ke, H. M. Lo,
S. C. Chen and C. W. Kuo, "High power nitride based light emitting diodes with
Ni/ITO p-type contacts", Solid State Electron., Vol. 47, No. 9, pp. 1565-1568,
September 2003. (SCI, EI, 0.5)
255.
Y. Z. Chiou, S. J. Chang, Y. K. Su, C. K. Wang, T. K. Lin and B. R. Huang,
"Photo-CVD SiO2 layers on AlGaN and AlGaN/GaN MOSHFET", IEEE Tran.
Electron. Dev., Vol. 50, No. 8, pp. 1748-1752, August 2003. (SCI, EI, 0.5)
256.
L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, T. C. Wen, C. H. Kuo, W. C.
Lai, C. S. Chang, J. M. Tsai and J. K. Sheu, "Nitride-based green light emitting
diodes with high temperature GaN barrier layers", IEEE Tran. Electron. Dev.,
Vol. 50, No. 8, pp. 1766-1770, August 2003. (SCI, EI, 0.33)
257.
M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, S. J. Chang, C. J. Kao, C. J. Tun,
M. G. Chen, W. H. Chang, G. C. Chi and J. M. Tsai, "Characterization of GaN
Schottky barrier photodetectors with a low-temperature GaN cap layer", J. Appl.
22
Phys., Vol. 94, No. 3, pp. 1753-1757, August 2003. (SCI, EI, 0.5)
C. H. Liu, Y. K. Su, T. C. Wen, S. J. Chang and R. W. Chuang,
258.
"Nitride-based green light emitting diodes grown by temperature ramping", J.
Crystal Growth, Vol. 254, No. 3-4, pp. 336-341, July 2003. (SCI, EI, 0.33)
C. H. Liu, C. S. Chang S. J. Chang, Y. K. Su, Y. Z. Chiou, S. H. Liu and B.
259.
R. Huang, "The characteristics of photo-CVD SiO2 and its application on SiC
MIS photodetectors", Mater. Sci. Eng. B, Vol. 100, No. 2, pp. 142-146, July 2003.
(SCI, EI, 0.5)
C. S. Chang, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, Y. P. Hsu, S. C.
260.
Shei, J. C. Ke, H, M, Lo, S. C. Chen and C. H. Liu, "InGaN/GaN light emitting
diodes with rapid thermal annealed Ni/ITO p-contacts", Jpn. J. Appl. Phys., Vol.
42, No. 6A, pp. 3324-3327, June 2003. (SCI, EI, 0.5)
261.
S. J. Chang, S. C. Wei, Y. K. Su, C. H. Liu, S. C. Chen, U. H. Liaw, T. Y.
Tsai and T. H. Hsu, "AlGaN/GaN MODFETs with an Mg-doped current
confinement layer", Jpn. J. Appl. Phys., Vol. 42, No. 6A, pp. 3316-3319, June
2003. (SCI, EI, 0.33)
C. H. Liu, Y. K. Su, L. W. Wu, S. J. Chang and R. W. Chuang, "Tunneling
262.
efficiency of n+-InGaN/GaN SPS tunneling contact layer for nitride-based
LEDs", Semicond. Sci. Technol., Vol. 18, No. 6, pp. 545-548, June 2003. (SCI, EI,
0.33)
X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L.
263.
Lee, G. C. Chi and S. J. Chang, "Deep level defect in Si-implanted GaN n+-p
junction", Appl. Phys. Lett., Vol. 82, No. 21, pp. 3671-3673, May 2003. (SCI, EI,
1.0)
Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, C. S. Chang and S. H. Liu, "The
264.
properties of photo chemical vapor deposition SiO2 and its application in GaN
metal insulator semiconductor ultraviolet photodetectors", J. Electron. Mater.,
Vol. 32, No. 5, pp. 395-399, May 2003. (SCI, EI, 0.5)
J. K. Sheu, C. J. Kao, M. L. Lee, W. C. Lai, L. S. Yeh, G. C. Chi, S. J.
265.
Chang, Y. K. Su and J. M. Tsai, "Nitride-based ultraviolet
metal-semiconductor-metal photodetectors with a low-temperature GaN layer", J.
Electron. Mater., Vol. 32, No. 5, pp. 400-402, May 2003. (SCI, EI, 0.5)
Y. P. Hsu, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei. Y. C. Lin, C. H.
266.
Kuo, L. W. Wu and S. C. Chen, "InGaN/GaN light emitting diodes with a
reflector at the backside of sapphire substrates", J. Electron. Mater., Vol. 32, No.
5, pp. 403-406, May 2003. (SCI, EI, 0.5)
267.
C. K. Wang, Y. Z. Chiou, S. J. Chang, Y. K. Su, B. R. Huang, T. K. Lin and
S. C. Chen, "AlGaN/GaN metal oxide semiconductor heterostructure field effect
transistor with photo chemical vapor deposition SiO2 gate oxide", J. Electron.
Mater., Vol. 32, No. 5, pp. 407-410, May 2003. (SCI, EI, 0.5)
L. W. Wu, S. J. Chang, Y. K. Su, T. Y. Tsai, T. C. Wen, C. H. Kuo, W. C. Lai,
268.
J. K. Sheu, J. M. Tsai, S. C. Chen and B. R. Huang, "InGaN/GaN LEDs with a
Si-doped InGaN/GaN short-period superlattice tunneling contact layer", J.
23
Electron. Mater., Vol. 32, No. 5, pp. 411-414, May 2003. (SCI, EI, 0.33)
C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C.
269.
Lai, J. M. Tsai and S. C. Chen, "Nitride-based near ultraviolet multiple quantum
well light emitting diodes with AlGaN barrier layers", J. Electron. Mater., Vol.
32, No. 5, pp. 415-418, May 2003. (SCI, EI, 0.5)
T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, C. H. Kuo, W. C. Lai and J. K.
270.
Sheu, "InGaN/GaN multiple quantum well green light-emitting diodes prepared
by temperature ramping", J. Electron. Mater., Vol. 32, No. 5, pp. 419-422, May
2003. (SCI, EI, 0.5)
271.
Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S, H, Liu and C. S.
Chang, "InGaN/GaN multiquantum well p-n junction photodiodes", IEEE J.
Quan. Electron., Vol. 39, No. 5, pp. 681-685, May 2003. (SCI, EI, 0.5)
Y. K. Su, S. J. Chang, Y. Z. Chiou, T. Y. Tsai, J. Gong, Y. C. Lin, S. H. Liu
272.
and C. S. Chang, "Nitride-based multiquantum well p-n junction photodiodes",
Solid State Electron., Vol. 47, No. 5, pp. 879-883, May 2003. (SCI, EI, 0.33)
L. S. Yeh, M. L. Lee, J. K. Sheu, M. G. Chen, C. J. Kao, C. J. Tun, G. C. Chi,
273.
S. J. Chang and Y. K. Su, "Visible-blind GaN p-i-n photodiodes with an
Al0.12Ga0.88N/GaN superlattice structure", Solid State Electron., Vol. 47, No. 5,
pp. 873-878, May 2003. (SCI, EI, 0.5)
Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, S. C. Chang, S. C. Shei, C. W.
274.
Kuo and S. C. Chen, “InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and
ITO p-type contacts”, Solid State Electron., Vol. 47, No. 5, pp. 849-853, May
2003. (SCI, EI, 0.33)
S. C. Wei, Y. K. Su, T. M. Kuan, R. L. Wang, S. J. Chang, C. H. Ko, J. B.
275.
Webb and J. A. Bardwell, "Investigation of low frequency noise of GaN-based
heterostructure field effect transistors", Electron. Lett., Vol. 39, No. 11, pp.
877-878, May 2003. (SCI, EI, 0.5)
276.
S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J.
Kao, G. C. Chi and J. M. Tsai, "GaN metal-semiconductor-metal photodetectors
with low-temperature GaN cap layers and ITO metal contacts", IEEE Electron.
Dev. Lett., Vol. 24, No. 4, pp. 212-214, April 2003. (SCI, EI, 0.5)
Y. Z. Chiou, Y. K. Su, S. J. Chang and C. H. Chen, "GaN metal
277.
semiconductor interface and its applications in GaN and InGaN metal
semiconductor metal photodetectors", IEE Proc. - Optoelectron., Vol. 150, No. 2,
pp. 115-118, April 2003. (SCI, EI, 0.5)
C. S. Chang, S. J. Chang, Y. K. Su, Y. C. Lin, Y. P. Hsu, S. C. Shei, S. C.
278.
Chen, C. H. Liu and U. H. Liaw, “InGaN/GaN light emitting diodes with ITO
p-contact layers prepared by RF sputtering”, Semicond. Sci. Technol., Vol. 18, No.
4, pp. L21-L23, April 2003. (SCI, EI, 0.55)
C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. F. Chen, J. K. Sheu and J. M.
279.
Tsai, "GaN-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short
period superlattice current spreading layer", Jpn. J. Appl. Phys., Vol. 42, No. 4B,
pp. 2270-2272, April 2003. (SCI, EI, 0.33)
24
C. H. Chen, S. J. Chang and Y. K. Su, "High indium content InGaN/GaN
280.
multiple quantum well yellowish green light emitting diodes", Jpn. J. Appl. Phys.,
Vol. 42, No. 4B, pp. 2281-2283, April 2003. (SCI, EI, 0.5)
C. H. Kuo, J. K. Sheu, S. J. Chang, Y. K. Su, L. W. Wu, J. M. Tsai, C. H.
281.
Liu and R. K. Wu, "n-UV+blue/green/red white light emitting diode lamps", Jpn.
J. Appl. Phys., Vol. 42, No. 4B, pp. 2284-2287, April 2003. (SCI, EI, 0.5)
M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J.
282.
Kao, G. C. Chi and J. M. Tsai, "GaN Schottky barrier photodetectors with a
low-temperature GaN cap layer", Appl. Phys. Lett., Vol. 82, No. 17, pp.
2913-2915, April 2003. (SCI, EI, 0.33)
Y. Z. Chiou, J. R. Chiou, Y. K. Su, S. J. Chang, B. R. Huang, C. S. Chang
283.
and Y. C. Lin, "The characteristics of different transparent electrodes on GaN
photodetectors", Mater. Chem. Phys., Vol. 80, No. 1, pp. 201-204, April 2003.
(SCI, EI, 0.5)
H. R. Wu, K. W. Lee, T. B. Nian, D. W. Chou, J. J. Huang, Y. H. Wang, M. P.
284.
Houng, P. W. Sze, Y. K. Su, S. J. Chang, C. H. Ho, C. I. Chiang, Y. T. Chern, F.
S. Juang, T. C. Wen, W. I. Lee and J. I. Chyi, "Liquid phase deposited SiO2 on
GaN", Mater. Chem. Phys., Vol. 80, No. 1, pp. 329-333, April 2003. (SCI, EI,
0.25)
285.
S. J. Chang, C. H. Chen, Y. K. Su, J. K. Sheu, W. C. Lai, J. M. Tsai, C. H.
Liu and S. C. Chen, "Improved ESD protection by combining InGaN/GaN
MQW LED with GaN Schottky diode", IEEE Electron. Dev. Lett., Vol. 24, No. 3,
pp. 129-131, April 2003. (SCI, EI, 0.5)
Y. M. Lin, S. L. Wu, S. J. Chang, S. Koh and Y. Shiraki, "SiGe
286.
heterostructure field-effect transistor using V-shaped confining potential well",
IEEE Electron. Dev. Lett., Vol. 24, No. 2, pp. 69-71, February 2003. (SCI, EI,
1.0)
287.
S. J. Chang, L. W. Wu, Y. K. Su, C. H. Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu,
J. F. Chen and J. M. Tsai, "Si and Zn co-doped InGaN/GaN white light emitting
diodes", IEEE Tran. Electron. Dev., Vol. 36, No. 2, pp. 519-521, February 2003.
(SCI, EI, 0.33)
C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, W. C. Lai, T. C.
288.
Wen and J. M. Tsai, "Nitride-based light-emitting diodes with Si-doped
In0.23Ga0.77N/GaN short period superlattice tunneling contact layer", IEEE Tran.
Electron. Dev., Vol. 36, No. 2, pp. 535-537, February 2003. (SCI, EI, 0.5)
Y. C. Lin, S. J. Chang, Y. K. Su, J. F. Chen, S. C. Shei, S. J. Hsu, C. H. Liu,
289.
U. H. Liaw and B. R. Huang, “Inductively coupled plasma etching of GaN using
Cl2/He gases”, Mater. Sci. Eng. B, Vol. 98, No. 1, pp. 60-64, February 2003. (SCI,
EI, 0.5)
290.
S. J. Chang, Y. K. Su, Y. Z. Chiou, J. R. Chiou, B. J. Huang, C. S. Chang
and J. F. Chen, "Deposition of SiO2 layers on GaN by photo chemical vapor
deposition", J. Electrochem. Soc., Vol. 150, No. 2, pp. C77-C80, February 2003.
(SCI, EI, 0.33)
25
291.
L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai,
Q. K. Xue and S. C. Chen, "Growth of nanoscale InGaN self-assembled quantum
dots and their room-temperature photoluminescence", J. Crystal Growth, Vol.
249, No. 1-2, pp. 144-148, February 2003. (SCI, EI, 0.5)
292.
Y. Z. Chiou, C. S. Chang, S. J. Chang, Y. K. Su, J. R. Chiou, B. J. Huang
and J. F. Chen, "Deposition of SiO2 layers on 4H-SiC by photo chemical vapor
deposition", J. Vac. Sci. Technol. B, Vol. 21, No. 1, pp. 329-331, January 2003.
(SCI, EI, 0.33)
293.
J. K. Sheu, S. J. Chang, C. H. Kuo, Y K. Su, L. W. Wu, Y. C. Lin, J. M. Tsai,
R. K. Wu and G. C. Chi, "White light emission from near UV InGaN/GaN LED
chip precoated with blue/green/red phosphors", IEEE Photon. Technol. Lett., Vol.
15, No. 1, pp. 18-20, January 2003. (SCI, EI, 0.5)
294.
P. W. Chien, S. C. Li, S. L. Wu and S. J. Chang, "Fabricating -doped layers
in silicon by ultra high vacuum chemical vapor deposition", Mater. Chem. Phys.
Vol. 77, No. 2, pp. 426-429, January 2003. (SCI, EI, 1.0)
295.
J. S. Lee, S. J. Chang, J. F. Chen, S. C. Sun, C. H. Liu and U. H. Liaw,
"Effects of O2 thermal annealing on the properties of CVD Ta2O5 thin films",
Mater. Chem. Phys., Vol. 77, No. 1, pp. 242-247, January 2003. (SCI, EI, 1.0)
296.
Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, S. J.
Hsu, C. H. Liu, U. H. Liaw, S. C. Chen and B. R. Huang, “Nitride-based light
emitting diodes with Ni/ITO p-type ohmic contacts”, IEEE Photon. Technol.
Lett., Vol. 14, No. 12, pp. 1668-1670, December 2002. (SCI, EI, 0.33)
297.
H. Tang, J. B. Webb, S. Rolfe, J. A. Bardwell, D. Tomka, P. Coleridge, C. H.
Ko, Y. K. Su and S. J. Chang, "GaN/AlGaN two-dimensional electron gas
grown by ammonia-MBE on MOCVD GaN template", Phys. Status Solidi B, Vol.
234, No. 3, pp. 822-825, December 2002. (SCI, EI, 0.5)
M. L. Lee, J. K. Sheu, L. S. Yeh, M. S. Tsai, C. J. Kao, C. J. Tun, S. J.
298.
Chang and G. C. Chi, "GaN p-n junction diode formed by Si ion implantation
into p-GaN", Solid State Electron., Vol. 46, No. 12, pp. 2179-2183, December
2002. (SCI, EI, 1.0).
299.
Y. Z. Chiou, Y. K. Su, S. J. Chang, Y. C. Lin, C. S. Chang and C. H. Chen,
"InGaN/GaN MQW P-N junction photodetectors", Solid State Electron., Vol. 46,
No. 12, pp. 2227-2229, December 2002. (SCI, EI, 0.5)
300.
Y. K. Su, Y. Z. Chiou, C. S. Chang, S. J. Chang, Y. C. Lin and J. F. Chen,
"4H-SiC metal-semiconductor-metal ultraviolet photodetectors with Ni/ITO
electrodes", Solid State Electron., Vol. 46, No. 12, pp. 2237-2240, December
2002. (SCI, EI, 0.33)
301.
H. Tang, J. B. Webb, P. Coleridge, J. A. Bardwell, C. H. Ko, Y. K. Su and S.
J. Chang, “Scattering lifetimes due to interface roughness with large lateral
correlation length in AlxGa1-xN/GaN two-dimensional electron gas”, Phys. Rev. B,
Vol. 66, No. 24, Art. no. 245305, December 2002. (SCI, EI, 0.5)
302.
S. J. Chang, W. C. Lai, J. F. Chen, S. C. Chen, B. R. Huang, C. H. Liu and
U. H. Liaw, "Be diffusion in GaN", Mater. Charact., Vol. 49, No. 4, pp. 337-341,
26
November 2002. (SCI, EI, 0.5)
303.
S. J. Chang, J. S. Lee, J. F. Chen, S. C. Sun, C. H. Liu, U. H. Liaw and B. R.
Huang, "Improvement of electrical and reliability properties of tantalum
pentoxide by high density plasma (HDP) annealing in N2O", IEEE Electron. Dev.
Lett., Vol. 23, No. 11, pp. 643-645, November 2002. (SCI, EI, 0.5)
304.
J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, M. G. Chen, G. C. Chi,
S. J. Chang, Y. K. Su and C. T. Lee, "Planar GaN n+-p photodetectors formed by
Si implants into p-GaN", Appl. Phys. Lett., Vol. 81, No. 22, pp. 4263-4265,
November 2002. (SCI, EI, 0.5)
305.
B. R. Huang and S. J. Chang, "The electrical conduction mechanism for the
polycrystalline diamond membrane in the voltage range of +-50 V", Mater. Lett.,
Vol. 56, No. 5, pp. 867-872, November 2002. (SCI, EI, 1.0)
306.
C. H. Lee, S. L. Wu, S. J. Chang, A. Miura, S. Koh, Y. Shiraki, "A novel
triple -doped SiGe heterostructure field-effect transistor", Jpn. J. Appl. Phys.
Lett., Vol. 41, No. 11A, pp. L1212-L1214, November 2002. (SCI, EI, 1.0)
307.
P. W. Chien, S. L. Wu, S. C. Lee, S. J. Chang, H. Miura, S. Koh and Y.
Shiraki, "P-type delta doped SiGe/Si heterostructure field-effect transistors",
Electron. Lett., Vol. 38, No. 21, pp. 1289-1291, October 2002. (SCI, EI, 1.0)
308.
C. H. Ko, Y K. Su, S. J. Chang, W. H. Lan, J. Webb, M. C. Tu and Y. T.
Cherng, "Photo-enhanced chemical wet etching of GaN", Mater. Sci. Eng. B, Vol.
96, pp. 43-47, October 2002. (SCI, EI, 0.5)
309.
S. J. Chang, Y. K. Su, T. Yang, C. S. Chang, T. P. Chen and K. H. Huang,
"AlGaInP/sapphire glue bonded light emitting diodes", IEEE J. Quan. Electron.,
Vol. 38, No. 10, pp. 1390-1394, October 2002. (SCI, EI, 0.5)
310.
Y. K. Su, J. Zhong and S. J. Chang, "A novel vertical cavity surface
emitting laser with semiconductor/superlattice distributed Bragg reflectors",
IEEE Photon. Technol. Lett., Vol. 14, No. 10, pp. 1388-1390, October 2002. (SCI,
EI, 0.5)
311.
Y. K. Su, S. J. Chang, C. H. Ko, J. F. Chen, W. H. Lan, W. J. Lin, Y. T.
Cherng and J. Webb, "InGaN/GaN light emitting diodes with a p-down
structure", IEEE Tran. Electron. Dev., Vol. 49, No. 8, pp. 1361-1366, August
2002. (SCI, EI, 0.33)
312.
W. R. Chen, S. J. Chang, Y. K. Su, J. F. Chen, W. H. Lan, W. J. Lin, Y. T.
Cherng, C. H. Liu and U. H. Liaw, "ZnCdSeTe-based orange light emitting
diode", IEEE Photon. Technol. Lett., Vol. 14, No. 8, pp. 1061-1063, August 2002.
(SCI, EI, 0.33)
313.
Y. K. Su, C. H. Wu, J. R. Chang, K. M. Wu, H. C. Wang, W. B. Chen, S. J.
You and S. J. Chang, "Well width dependence for novel AlInAsSb/InGaAs
double barrier resonant tunneling diode", Solid State Electron., Vol. 46, pp.
1109-1111, August 2002. (SCI, EI, 0.5)
314.
Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi. J. K. Sheu, W. C.
Lai and J. M. Tsai, "GaN metal-semiconductor-metal ultraviolet sensors with
various contact electrodes", IEEE Sensors Journal, Vol. 2, No. 4, pp. 366-371,
27
July/August 2002. (SCI, EI, 0.5)
315.
J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang and G. C.
Chi, "Characterization of Si implants in p-type GaN", IEEE J. Sel. Top. Quan.
Electron., Vol. 8, No. 4, pp. 767-772, July/August 2002. (SCI, EI, 1.0)
316.
S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C.
Lai, J. F. Chen and J. M. Tsai, "400nm InGaN/GaN and InGaN/AlGaN
multiquantum well light-emitting diodes", IEEE J. Sel. Top. Quan. Electron., Vol.
8, No. 4, pp. 744-748, July/August 2002. (SCI, EI, 0.33)
317.
W. R. Chen, S. J. Chang, Y. K. Su, J. F. Chen, W. H. Lan, W. J. Lin, Y. T.
Cherng, C. H. Liu and U. H. Liaw, "ZnSe epitaxial layers and ZnSSe/ZnSe strain
layer superlattices grown by molecular beam epitaxy", Superlattice Microst., Vol.
32, No. 1, pp. 59-63, July 2002. (SCI, EI, 0.33)
318.
D. W. Chou, K. W. Lee, J. J. Huang, H. R. Wu, Y. H. Wang, M. P. Houng, S.
J. Chang and Y. K. Su, "AlGaN/GaN metal oxide semiconductor heterostructure
field-effect transistor based on a liquid phase deposited oxide", Jpn. J. Appl.
Phys. Lett., Vol. 41, No. 7A, pp. L748-L750, July 2002. (SCI, EI, 0.25)
319.
C. H. Chen, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, C. H. Kuo and Y.
C. Lin, "Nitride-based cascade near white light emitting diodes", IEEE Photo.
Technol. Lett., Vol. 14, No. 7, pp. 908-910, July 2002. (SCI, EI, 0.33)
320.
K. W. Lee, D. W. Chou, J. J. Huang, H. R. Wu, Y. H. Wang, M. P. Houng, S.
J. Chang and Y. K. Su, "GaN MOSFET with liquid phase deposited oxide",
Electron. Lett., Vol. 38, No. 15, pp. 829-830, July 2002. (SCI, EI, 0.25)
321.
Y. Z. Chiou, Y. K. Su, S. J. Chang, J. F. Chen, C. S. Chang, S. H. Liu, I. C.
Lin and C. H. Chen, "Transparent TiN electrodes in GaN
metal-semiconductor-metal ultraviolet photodetectors", Jpn. J. Appl. Phys., Vol.
41, No. 6A, pp. 3643-3645, June 2002. (SCI, EI, 0.33)
322.
T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai C. H. Kuo, C. H.
Chen, J. K. Sheu and J. F. Chen, "InGaN/GaN tunnel injection blue light
emitting diodes", IEEE Tran. Electron. Dev., Vol. 49, No. 6, pp. 1093-1095, June
2002. (SCI, EI, 0.33)
323.
L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, W. C. Lai, C. H. Kuo, C. H.
Chen and J. K. Sheu, "Influence of Si-doping on the characteristics of
InGaN/GaN multiple quantum well blue light emitting diodes", IEEE J. Quan.
Electron., Vol. 38, No. 5, pp. 446-450, May 2002. (SCI, EI, 0.33)
324.
C. H. Kuo, S. J. Chang, Y K. Su, J. F. Chen, L. W. Wu, J. K. Sheu, C. H.
Chen and G. C. Chi, "InGaN/GaN light emitting diodes activated in O 2 ambient",
IEEE Electron. Dev. Lett., Vol. 23, No. 5, pp. 240-242, May 2002. (SCI, EI,
0.33)
325.
C. Y. Su, L. P. Chen, S. J. Chang, B. M. Tseng, D. C. Lin, G. W. Huang, Y. P.
Ho, H. Y. Lee, J. F. Kuan, W. Y. Wen, P. Liou, C. L. Chen, L. Y. Leu, K. A. Wen
and C. Y. Chang, "A macro model of silicon spiral inductor", Solid State
Electron., Vol. 46, No. 5, pp. 759-767, May 2002. (SCI, EI, 1.0)
326.
C. H. Ko, Y K. Su, S. J. Chang, T. M. Kuan, C. I. Chiang, W. H. Lan, W. J.
28
Lin and J. Webb, "A p-down InGaN/GaN MQW LED structure grown by
MOVPE", Jpn. J. Appl. Phys., Vol. 41, No. 4B, pp. 2489-2492, April 2002. (SCI,
EI, 0.5)
327.
J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J.
Chang and Y. K. Su, "White-light emission from InGaN/GaN multi-quantum
well light-emitting diodes with Si and Zn codoped active layer", IEEE Photon.
Technol. Lett., Vol. 14, No. 4, pp. 450-452, April 2002. (SCI, EI, 0.5)
328.
S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu and U. H. Liaw,
"InGaN/GaN multiquantum well blue and green light emitting diodes", IEEE J.
Sel. Top. Quan. Electron., Vol. 8, No. 2, pp. 278-283, March/April 2002. (SCI, EI,
0.33)
329.
C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu and J. F. Chen,
"High efficient InGaN/GaN MQW green light emitting diodes with CART and
DBR structures", IEEE J. Sel. Top. Quan. Electron., Vol. 8, No. 2, pp. 284-288,
March/April 2002. (SCI, EI, 0.33)
330.
C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H.
Liu and U. H. Liaw, "High brightness green light emitting diode with charge
asymmetric resonance tunneling structure", IEEE Electron. Dev. Lett., Vol. 23,
No. 3, pp. 130-132, March 2002. (SCI, EI, 0.33)
331.
C. H. Ko, S. J. Chang, Y. K. Su, W. H. Lan, J. F. Chen, T. M. Kuan, Y. C.
Huang, 5C. I. Chiang, J. Webb and W. J. Lin, "On the carrier concentration and
Hall mobility in GaN epitaxial layers", Jpn. J. Appl. Phys. Lett., Vol. 41, No.
3A, pp. L226-L228, March 2002. (SCI, EI, 0.33)
332.
J. S. Lee, S. C. Sun, S. J. Chang, J. F. Chen, C. H. Liu and U. H. Liaw,
"Effects of interfacial oxide layer for the Ta2O5 capacitor after high temperature
annealing", Jpn. J. Appl. Phys., Vol. 41, No. 2A, pp. 690-693, February 2002.
(SCI, EI, 0.5)
333.
J. K. Sheu, C. J. Tun, M. S. Tsai, C. C. Lee, G. C. Chi, S. J. Chang and Y. K.
Su, "n+-GaN formed by Si implantation into p-GaN", J. Appl. Phys., Vol. 91, No.
4, pp. 1845-1848, February 2002. (SCI, EI, 0.5)
334.
S. J. Chang, Y. K. Su, W. R. Chen, J. F. Chen, W. H. Lan, W. J. Lin, Y. T.
Cherng, C. H. Liu and U. H. Liaw, "ZnSTeSe metal-semiconductor-metal
photodetectors", IEEE Photon. Technol. Lett., Vol. 14, No. 2, pp. 188-190,
February 2002. (SCI, EI, 0.33)
335.
S. J. Chang, Y. K. Su, W. R. Chen, J. F. Chen, M. H. Chen, F. S. Juang, W.
H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu and U. H. Liaw, "ZnMgSSe
metal-semiconductor-metal visible-blind photodetectors with transparent
indium-tin-oxide contact electrodes", Jpn. J. Appl. Phys. Lett., Vol. 41, No.
2A, pp. L115-L117, February 2002. (SCI, EI, 0.33)
336.
C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen and G. C.
Chi, "Low temperature activation of Mg-doped GaN in O2 ambient", Jpn. J. Appl.
Phys. Lett., Vol. 41, No. 2A, pp. L112-L114, February 2002. (SCI, EI, 0.5)
337.
S. J. Chang, J. S. Lee, M. C. Wei, J. F. Chen, C. H. Liu and U. H. Liaw,
29
"Effects of photo-assisted O2 annealing on the properties of (Ba,Sr)TiO3 thin
films", J. Vac. Sci. Technol., Vol. 20, No. 1, pp. 107-111, January 2002. (SCI, EI,
0.5)
338.
C. Y. Su, L. P. Chen, S. J. Chang, G. W. Huang, D. C. Lin, Y. P. Ho, B. M.
Tseng, H. Y. Lee, J. F. Kuan, Y. M. Deng, K. A. Wen and C. Y. Chang, "An
automatic macro program for radio frequency MOSFETs characteristics
analysis", Microwave Journal, Vol. 44, No. 10, pp. 99-108, October 2001. (SCI,
EI, 1.0)
339.
J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su,
S. J. Chang and G. C. Chi, "Low-operation voltage of InGaN/GaN light-emitting
diodes with Si-doped In0.3Ga0.7N/GaN short-period superlattice tunneling contact
layer", IEEE Electron. Dev. Lett., Vol. 22, No. 10, pp. 460-462, October 2001.
(SCI, EI, 0.5)
340.
C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K.
Sheu and J. F. Chen, "GaN metal-semiconductor-metal ultraviolet photodetectors
with transparent indium-tin-oxide Schottky contacts", IEEE Photon. Technol.
Lett., Vol. 13, No. 8, pp. 848-850, August 2001. (SCI, EI, 0.33)
341.
C. Y. Su, B. M. Tseng, S. J. Chang and L. P. Chen, "Scalable RF MIS
varactor model", Electron. Lett., Vol. 37, No. 12, pp. 760-761, June 2001. (SCI,
EI, 1.0)
342.
W. C. Lai, S. J. Chang, M. Yokoyama, J. K. Sheu and J. F. Chen,
"InGaN/AlInGaN light emitting diodes", IEEE Photon. Technol. Lett., Vol. 13,
No. 6, pp. 559-561, June 2001. (SCI, EI, 0.5)
343.
K. S. Ramaiah, Y. K. Su, S. J. Chang, F. S. Juang, K. Ohdaira, Y. Shiraki, H.
P. Liu, I. G. Chen and A. K. Bhatnagar, "Characterization of Cu doped CdSe thin
films gown by vacuum evaporation", J. Crystal Growth, Vol. 224, No. 1-2, pp.
74-82, April 2001. (SCI, EI, 0.5)
344.
S. J. Chang, Y. K. Su, J. F. Chen, L. F. Wen and B. R. Huang, "Effects of
electron effective mass on the multiquantum barrier structure in AlGaInP laser
diodes", IEE Proc. - Optoelectron., Vol. 148, No. 2, pp. 117-120, April 2001.
(SCI, EI, 0.33)
345.
Y. K. Su, Y. Z. Chiou, F. S. Juang, S. J. Chang and J. K. Sheu, "GaN and
InGaN metal-semiconductor-metal photodetectors with different Schottky
contact metals", Jpn. J. Appl. Phys., Vol.40, No. 4B, pp. 2996-2999, April 2001.
(SCI, EI, 0.5)
346.
C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu and I. C. Lin,
"Vertical high quality mirror-like facet of GaN-based devices by reactive ion
etching", Jpn. J. Appl. Phys., Vol.40, No. 4B, pp. 2762-2764, April 2001. (SCI,
EI, 0.5)
347.
C. Y. Su, L. P. Chen, S. J. Chang, B. M. Tseng, D. C. Lin and H. Y. Lee,
"BSIM3v3-based varactor model", Electron. Lett., Vol. 37, No. 8 , pp. 525-527,
April 2001. (SCI, EI, 1.0)
348.
S. J. Chang, W. R. Chen, Y. K. Su, J. F. Chen, W. H. Lan, C. I. Chiang, W. J.
30
Lin, Y. T. Cherng and C. H. Liu, "Au/AuBe/Cr contact to p-ZnTe", Electron.
Lett., Vol. 37, No. 5, pp. 321-322, March 2001. (SCI, EI, 0.33)
349.
S. J. Chang, Y. K. Su, T. L. Tsai, C. Y. Chang, C. L. Chiang, C. S. Chang, T.
P. Chen and K. H. Huang, "Microwave treatment to activate Mg in GaN", Appl.
Phys. Lett., Vol. 78, No. 3, pp. 312-313, January 2001. (SCI, EI, 0.5)
350.
C. M. Lin, S. J. Chang, M. Yokoyama, I. N. Lin, J. F. Chen and B. R. Huang,
"Field-emission enhancement of Mo-tip field-emitted arrays fabricated by using
a redox method", IEEE Electron. Dev. Lett., Vol. 21, No. 12, pp. 560-562,
December 2000. (SCI, EI, 1.0)
351.
K. S. Ramaiah, Y. K. Su, S. J. Chang, F. S. Juang and C. H. Chen,
"Photoluminescence characteristics of Mg- and Si-doped GaN thin films grown
by MOCVD technique", J. Crystal Growth, Vol. 220, pp. 405-412, December
2000. (SCI, EI, 0.5)
352.
J. S. Lee, S. J. Chang, S. C. Sun, S. M. Jang and M. C. Yu, "Electrical
properties of thin gate dielectric grown by rapid thermal oxidation", J. Vac. Sci.
Technol., Vol. A18, No. 6, pp. 2986-2991, November/December 2000. (SCI, EI,
1.0)
353.
W. C. Lai, M. Yokoyama, S. J. Chang, J. D. Guo, C. H. Sheu, T. Y. Chen, W.
C. Tsai, J. S. Tsang, S. H. Chang and S. M. Sze, "Optical and electrical
characteristics of CO2 laser treated Mg-doped GaN film", Jpn. J. Appl. Phys.
Lett., Vol. 39, No. 11B, pp. L1138-L1140, November 2000. (SCI, EI, 1.0)
354.
P. W. Chien, S. L. Wu, S. J. Chang, Y. P. Wang, H. Miura and Y. Shiraki,
"Device linear improvement using SiGe/Si heterostructure delta-doped-channel
field effect transistor", Jpn. J. Appl. Phys. Lett., Vol. 39, No. 11B, pp.
L1149-L1151, November 2000. (SCI, EI, 1.0)
355.
C. M. Lin, S. J. Chang, M. Yokoyama and I. N. Lin, "Study of thermal stability
in diamond like carbon coated planar electron field emission arrays", J. Vac. Sci.
Technol., Vol. 18, No. 5, pp. 2424-2426, September/October 2000. (SCI, EI, 1.0)
356.
K. S. Ramaiah, V. S. Raja, A. K. Bhatnagar, F. S. Juang, S. J. Chang and Y.
K. Su, "Effects of annealing and -radiation on the properties of CuInSe2 thin
films", Mater. Lett., Vol. 45, pp. 251-261, September 2000. (SCI, EI, 0.5)
357.
F. S. Juang, S. J. Chang, Y. K. Su, C. C. Cheng and J. K. Sheu, "Ohmic
contacts and reactive ion beam etching for p-type GaN", J. Chinese Institute of
Electrical Engineering, Vol. 7, No. 3, pp. 203-210, August 2000 (EI, 0.5)
358.
C. Y. Su, S. L. Wu, S. J. Chang, and L. P. Chen, "Strained Si1-xGex graded
channel PMOSFET grown by UHVCVD", Thin Solid Films, Vol. 369, No. 1-2,
pp. 371-374, July 2000. (SCI, EI, 1.0)
359.
C. Y. Su, L. P. Chen, S. J. Chang, G. W. Huang, Y. P. Ho, B. M. Tseng, D. C.
Lin, H. Y. Lee, J. F. Kuan, Y. M. Deng, C. L. Chen, L. Y. Leu, K. A. Wen and C.
Y. Chang, "Coplanar probe pad design on the noise figures of 0.35 m
MOSFETs", Electron. Lett., Vol. 36, No. 15, pp. 1280-1281, July 2000. (SCI, EI,
1.0)
360.
Y. K. Su, W. R. Chen, S. J. Chang, F. S. Juang, W. H. Lan, A. C. H. Lin and H.
31
Chang, "The red shift of ZnSSe metal-semiconductor-metal light emitting diodes
with high injection currents", IEEE Tran. Elec. Dev., Vol. 47, No. 7, pp.
1330-1333, July 2000. (SCI, EI, 0.5)
361.
K. S. Ramaiah, V. S. Raja, A. K. Bhatnagar, R. D. Tomlinson, R. D.
Pilkington, A. E. Hill, S. J. Chang, Y. K. Su and F. S. Juang, "Optical structural
and electrical properties of tin doped indium oxide thin films prepared by
spray-pyrolysis technique", Semicond. Sci. Technol., Vol. 15, No. 7, pp. 676-683,
July 2000. (EI, 0.5)
362.
C. Y. Su, S. L. Wu, S. J. Chang and L. P. Chen, "Strained Si1-xGex normal
graded channel P-type metal-oxide-semiconductor field-effect-transistor" Jpn. J.
Appl. Phys. Lett., Vol. 39, No. 6B, pp. L279-L581, June 2000. (SCI, EI, 1.0)
363.
W. R. Chen, S. J. Chang, Y. K. Su, W. H. Lan, A. C. H. Lin and H. Chang,
"Reactive Ion Etching of ZnSe, ZnSSe, ZnCdSSe and ZnMgSSe by CH4/H2/Ar
and CH4/Ar", Jpn. J. Appl. Phys., Vol. 39, No. 6A, pp. 3308-3314, June 2000.
(SCI, EI, 0.5)
364.
S. J. Chang, Y. K. Su, F. S. Juang, C. T. Lin, C. D. Chiang and Y. T. Cherng,
"Photo-enhanced native oxidation process for Hg0.8Cd0.2Te photoconductors",
IEEE J. Quantum Electron., Vol. 36, No. 5, pp. 583-589, May 2000. (SCI, EI,
0.5)
365.
F. S. Juang, Y. K. Su, S. M. Chang, S. J. Chang, C. D. Chiang and Y. T.
Cherng, "Analysis of the dark current of focal-plane-array Hg1-xCdxTe diode",
Mater. Chem. Phys., Vol. 64, No. 2, pp. 131-136, April 2000. (SCI, EI, 0.5)
366.
C. M. Lin, S. J. Chang, M. Yokoyama and I. N. Lin, "Effects of redox
treatment on diamond-like carbon coated Mo substrates", Jpn. J. Appl. Phys.
Lett., Vol. 39, No. 2A, pp. L76-L78, February 2000. (SCI, EI, 0.5)
367.
S. L. Wu and S. J. Chang, "Si field-effect transistor with doping dipole in
buffer layer", Appl. Phys. Lett., Vol. 75, No. 18, pp. 2848-2850, November 1999.
(SCI, EI 1.0)
368.
S. J. Chang, W. R. Chen, Y. K. Su, R. C. Tu, W. H. Lan and H. Chang,
"Ohmic contact to p-ZnSe and p-ZnMgSSe", Electron. Lett., Vol. 35, No. 15, pp.
1280-1281, July 1999. (SCI, EI, 0.5)
369.
S. L. Wu and S. J. Chang, "High performance delta-modulation-doped
Si/SiGe heterostructure FET's grown by MBE", Solid State Electron., Vol. 43,
No. 7, pp. 1313-1316, July 1999. (SCI, EI, 1.0)
370.
C. M. Lin, S. J. Chang, M. Yokoyama, I. N. Lin, F. Y. Chuang, C. H. Tsai
and W. C. Wang, "Enhancement of electron emission characteristics of
platform-shaped Mo emitters by diamond-like carbon coatings", Jpn. J. Appl.
Phys., Vol. 38, No. 6A, pp. 3700-3704, June 1999. (SCI, EI, 1.0)
371.
S. J. Chang, Y. Z. Juang, D. K. Nayak and Y. Shiraki, "Reactive ion etching
of Si SiGe in CF4/Ar and Cl2/BCl3/Ar discharges", Mater. Chem. Phys., Vol. 60,
No. 1, pp. 22-27, July 1999. (SCI, EI, 1.0)
372.
C. M. Lin, S. J. Chang, M. Yokoyama, F. Y. Chuang, W. C. Wang and I. N.
Lin, "Enhancement on diamondlike carbon coated planar electron field emission
32
array using Au-precoating", Appl. Surf. Sci., Vol. 142, No. 1-4, pp. 499-503,
April 1999. (SCI, EI, 1.0)
373.
F. S. Juang, Y. K. Su, S. J. Chang, S. M. Chang, F. S. Shu, C. D. Chiang, Y.
T. Cherng and T. P. Sun, "Dark currents in HgCdTe photodiodes passivated with
ZnS/Cds", J. Electrochem. Soc., Vol. 146, No. 4: pp. 1540-1545, April 1999.
(SCI, EI, 0.5)
374.
C. M. Lin, S. J. Chang, M. Yokoyama, F. Y. Chuang,C. H. Tsai, W. C. Wang
and I. N. Lin, "Electron field emission characteristics of planar field emission
array with diamondlike carbon electron emitters", Jpn. J. Appl. Phys., Vol. 38,
No. 2A, pp. 890-893, February 1999. (SCI, EI, 1.0)
375.
S. L. Wu, T. T. Han, Y. P. Wang and S. J. Chang, "An inverted boron
d-doped high hole mobility transistor (HHMT) with a Si 0.4Ge0.6 quantum well", J.
Appl. Phys. Lett., Vol. 37, No. 11A, pp. L1290-L1292, November 1998. (SCI, EI,
1.0)
376.
J. K. Sheu, Y. K. Su, S. J. Chang, G. C. Chi, K. B. Lin, C. C. Liu and C. C.
Chiou, "Electrical derivative characteristics of ion implanted AlGaInP/GaInP
multi-quantum well lasers", Solid State Electron., Vol. 42, No. 10, pp. 1867-1869,
October 1998. (SCI, EI, 0.5)
377.
J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou and G. C. Chi, "Investigation of
wafer-bonded (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes", IEE Proc. Optoelectron., Vol. 145, No. 4, pp. 248-252, August 1998. (SCI, EI, 0.5)
378.
Y. Z. Juang, Y. K. Su, S. J. Chang, D. F. Huang and C. S. Chang "Reactive
ion etching for AlGaInP/GaInP laser structure", J. Vac. Sci. Technol., Vol. A16,
No. 4, pp. 2031-2036, July/August 1998. (SCI, EI, 0.5)
379.
S. J. Chang and C. S. Chang, "650nm AlGaInP/GaInP compressively
strained multi-quantum well light-emitting diodes", Jpn. J. App. Phys. Lett., Vol.
37, No. 6A, pp. L653-L655, June 1998. (SCI, EI, 1.0)
380.
S. J. Chang and C. S. Chang, "AlGaInP compressively strained
multi-quantum well light-emitting diodes for polymer fiber applications", IEEE
Photo. Techol. Lett., Vol. 10, No. 6, pp. 772-774, June 1998. (SCI, EI, 1.0)
381.
S. J. Chang and C. S. Chang, "642nm AlGaInP laser diodes with a tensile
strain barrier cladding layer", IEEE Photo. Techol. Lett., Vol. 10, No. 5, pp.
651-653, May 1998. (SCI, EI, 1.0)
382.
Y. K. Su, W. L. Li, S. J. Chang, C. S. Chang and C. Y. Tsai, "High
performance 670nm AlGaInP/GaInP visible strained quantum well lasers", IEEE
Tran. Electron. Dev., Vol. 45, No. 4, pp. 763-767, April 1998. (SCI, EI, 0.5)
383.
L. P. Chen, Y. C. Chan, S. J. Chang, G. W. Huang and C. Y. Chang, "Direct
oxidation of Si1-xGex layers using vacuum-ultra-violet light radiation in oxygen",
Jpn. J. Appl. Phys. Lett., Vol. 37, No. 2A, pp. L122-L124, February 1998. (SCI,
EI, 1.0)
384.
S. J. Chang, D. K. Nayak and Y. Shiraki, "1.54m electroluminescence
from erbium doped SiGe light emitting diodes", J. Appl. Phys., Vol. 83, No. 3, pp.
1426-1428, February 1998. (SCI, EI, 1.0)
33
385.
R. C. Tu, Y. K. Su, D. Y. Yin, C. F. Li, Y. S. Huang, W. H. Lan, S. L. Tu, S. J.
Chang, S. C. Chou and W. C. Chou, "Contactless electroluminescence study of
strained Zn0.79Cd0.21Se/ZnSe double quantum wells", J. Appl. Phys., Vol. 83, No.
2, pp. 1043-1048, January 1998. (SCI, EI, 0.5)
386.
C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang and
T. P. Chen, "High brightness AlGaInP 573nm light-emitting diode with a chirped
multi-quantum barrier", IEEE J. Quantum Electon., Vol. 34, No. 1, pp. 77-83,
January 1998. (SCI, EI, 0.5)
387.
W. L. Li, Y. K. Su, S. J. Chang, C. S. Chang and C. Y. Tsai, "Design of
AlGaInP visible lasers with a low vertical divergence angle", Solid State
Electron., Vol. 42, No. 1, pp. 87-90, January 1998. (SCI, EI, 0.5)
388.
S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and
T. P. Chen, "AlGaInP multi-quantum well light-emitting diodes", IEE
Proceeding – Optoelectron., Vol. 144, No. 6, pp. 405-409, December 1997. (SCI,
EI, 0.5)
389.
W. L. Li, Y. K. Su, S. J. Chang and C. Y. Tsai, "A novel waveguide structure
to reduce beam dispersion and threshold current in GaInP/AlGaInP visible
quantum well lasers", Appl. Phys. Lett., Vol. 71, No. 16, pp. 2245-2247, October
1997. (SCI, EI, 0.5)
390.
S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and
T. P. Chen, "AlGaInP yellow-green light-emitting diodes with a tensile strain
barrier cladding layer", IEEE Photo. Techol. Lett., Vol. 9, No. 9, pp. 1191-1201,
September 1997. (SCI, EI, 0.5)
391.
C. T. Lin, Y. K. Su, S. J. Chang, H. T. Huang, S. M. Chang and T. P. Sun,
"Effects of passivation and extraction trap density on the 1/f noise of HgCdTe
photoconductive detector", IEEE Photo. Techol. Lett., Vol. 9, No. 2, pp. 232-234,
February 1997. (SCI, EI, 0.5)
392.
S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and
T. P. Chen, "Chirped GaAs/AlAs distributed Bragg reflectors for high brightness
yellow-green light-emitting diodes", IEEE Photo. Techol. Lett., Vol. 9, No. 2, pp.
182-184, February 1997. (SCI, EI, 0.5)
393.
S. J. Chang, Y. C. Yin, C. M. Lin and A. Y. G. Fuh, "Relaxation time of
polymer ball type PDLC films", Liq. Cryst., Vol. 21, No. 5, pp. 707-711,
November 1996. (SCI, EI, 1.0)
394.
S. J. Chang, J. K. Sheu, Y. K. Su, M. J. Jou and G. C. Chi, "AlGaInP/GaP
light emitting diodes fabricated by direct bonding technology", Jpn. J. Appl.
Phys., Vol. 35, No. 8, pp. 4199-4202, August 1996. (SCI, EI, 0.5)
395.
S. J. Chang, C. M. Lin and A. Y. G. Fuh, "Studies of polymer ball type
polymer dispersed liquid crystal films", Liq. Cryst., Vol. 21, No. 1, pp. 19-23,
July 1996. (SCI, EI, 1.0)
396.
C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, G. S. Chen, T. P. Sun and J. J.
Luo, "Electrical properties of the stacked ZnS/photo-enhanced-native-oxide
passivation for HgCdTe photodiodes", IEEE Photo. Techol. Lett., Vol. 8, No. 5,
34
pp. 676-678, May 1996. (SCI, EI, 0.5)
397.
S. J. Chang, C. M. Lin and A. Y. G. Fuh, "Effects of photoinitiator on the
properties of polymer ball type PDLC films", Jpn. J. Appl. Phys., Vol. 35, No.
4A, pp. 2180-2183, April 1996. (SCI, EI, 1.0)
398.
Y. K. Su, C. T. Lin, H. T. Huang, S. J. Chang, T. P. Sun, G. S. Chen and J. J.
Luo,
"The
electrical
properties
of
high
quality
stacked
CdTe/photo-enhanced-native-oxide for HgCdTe passivation", Jpn. J. Appl. Phys.,
Vol. 35, No. 2B, pp. 1165-1167, February 1996. (SCI, EI, 0.5)
399.
C. T. Lin, S. J. Chang, D. K. Nayak and Y. Shiraki, "The properties of SiO2
films using direct photo chemical vapor deposition on strained SiGe layer", Appl.
Surface Sci., Vol. 92, pp. 193-197, February 1996. (SCI, EI, 1.0)
400.
S. J. Chang, "Neodymium-doped GaAs light emitting diodes", J. Appl.
Phys., Vol. 78, No. 6, pp. 4279-4281, September 1995. (SCI, EI, 1.0)
401.
S. J. Chang, D. K. Nayak and Y. Shiraki, "Photoluminescence of erbium
implanted in SiGe", Jpn. J. Appl. Phys., Vol. 34, No.10, pp. 5633-5636, October
1995. (SCI, EI, 1.0)
402.
A. Y. G. Fuh, C. Y. Huang, M. S. Tsai, G. L. Lin and S. J. Chang, "Studies
of polymer stabilized cholesteric liquid crystal texture films", Chinese J. Phys.,
Vol. 33, No. 3, pp. 291-302, June 1995. (SCI, EI, 1.0)
403.
H. Kuan, Y. K. Su, S. J. Chang and W. J. Tzou, "Photoreflectance study of
InP and GaAs by MOCVD using tertiarybutylphosphine and tertiarybutylarsine
source", Jpn. J. Appl. Phys., Vol. 34, No. 4A, pp. 1831-1832, April 1995. (SCI,
EI, 0.5)
404.
C. T. Lin, S. J. Chang, D. K. Nayak and Y. Shiraki, "Deposition of SiO2
layer on strained SiGe substrate", Jpn. J. Appl. Phys., Vol. 34, No. 1, pp. 72-74,
January 1995. (SCI, EI, 1.0)
405.
S. J. Chang and S. Chiao, "Effects of matrix impedance on the properties of
polymer dispersed liquid crystal cells", Jpn. J. Appl. Phys., Vol. 34, No. 8A, pp,
4074-4078, August 1995. (SCI, EI, 1.0)
406.
S. J. Chang, Y. K. Su and Y. P. Shei, "High quality ZnO thin films on InP
substrates prepared by RF magnetron sputtering (I) - Material study", J. Vac.
Sci. Technol., Vol. A13, No. 2, pp. 381-384, March 1995. (SCI, EI, 0.5)
407.
S. J. Chang, Y. K. Su and Y. P. Shei, "High quality ZnO thin films on InP
substrates prepared by RF magnetron sputtering (II) - Surface acoustic wave
device fabrication", J. Vac. Sci. Technol., Vol. A13, No. 2, pp. 385-388, March
1995. (SCI, EI, 0.5)
408.
S. J. Chang, S. Chiao, W. J. Lai, C. M. Lin and A. Y. G. Fuh, "Polymer
dispersed liquid crystal display device for projection high definition
television application", Macromolecular Symposia, Vol. 84, No. 1, pp. 159-163,
July 1994. (SCI, EI, 1.0)
409.
S. J. Chang and K. Takahei, "Studies of GaAs:Er impact excited
electroluminescence devices", Appl. Phys. Lett., Vol. 65, No. 4, pp. 433-435,
July 1994. (SCI, EI, 1.0)
35
410.
J. D. Lin, Y. K. Su, S. J. Chang, M. Yokoyama and F. Y. Juang,
"Passivation with SiO2 on HgCdTe by direct photo-CVD", J. Vac. Sci. Technol.,
Vol. A12, No. 1, pp. 7-11, January 1994. (SCI, EI, 0.5)
411.
S. J. Chang and K. Takahei, "Optical properties of the dominant Nd center
in GaP", J. Appl. Phys., Vol. 73, No. 2, pp. 943- 947, January 1993. (SCI, EI,
1.0)
412.
J. Nakata, S. J. Chang and K. Takahei, "Direct evidence of Er atoms
occupying an interstitial site in metalorganic chemical vapor deposition-grown
GaAs:Er", Appl. Phys. Lett., Vol. 61, No. 22, pp. 2665-2667, November 1992.
(SCI, EI, 1.0)
413.
A. Taguchi, S. J. Chang and K. Takahei, "Direct verification of energy back
transfer from Yb 4f-shell to InP host", Appl. Phys. Lett., Vo. 60, No. 8, pp.
965-967, February 1992. (SCI, EI, 1.0)
414.
S. J. Chang, H. Nakagome and K. Takahei, "Luminescence lifetime studies
of Nd-doped GaP and GaAs", J. Lumin., Vol. 52, No. 5-6, pp. 251-257, June
1992. (SCI, EI, 1.0)
415.
P. M. Adams, R. C. Bowman, Jr., C. C. Ahn, S. J. Chang, V. Arbet-Engels,
M. A. Kallel and K. L. Wang, "Structure characterization of Ge mSin strained
layer superlattices", J. Appl. Phys., Vol. 71, No. 9, pp. 4305-4313, May 1992.
(SCI, EI, 1.0)
416.
S. J. Chang, H. Nakagome and K, Takahei, "Observation of luminescence
from a highly concentrated Nd center in GaP by direct optical excitation and
comparison with Nd centers excited under host excitation", Jpn. J. Appl. Phys.
30 (1991) 3788
417.
S. J. Chang, H. Nakagome and K. Takahei, "Luminescence intensity and
lifetime dependence on temperature for Nd-doped GaP and GaAs", Appl. Phys.
Lett., Vol. 58, No. 21, pp. 2390-2392, May 1991. (SCI, EI, 1.0)
418.
A. Bindal, K. L. Wang, S. J. Chang and M. A. Kallel, "Major implantation
induced defects in conventional and rapid thermal annealed, silicon implanted
LEC-grown GaAs", J. Electrochem. Soc., Vol. 138, No. 1, pp. 222-226, January
1991. (SCI, EI, 1.0)
419.
S. J. Chang, V. Arbet, K. L. Wang, R. C. Bowman, Jr., P. M. Adams, D.
Nayak and J. C. S. Woo, "Studies of interdiffusion in GemSin strained layer
superlattices", J. Electron. Mater., Vol. 19, pp. 125-130 1990. (SCI, EI, 1.0)
420.
V. Arbet, S. J. Chang and K. L. Wang, "Investigation of GemSin strained
monolayer superlattices by Rheed, Raman and X-ray technology", Thin Solid
Films, Vol. 183, pp. 57-63. December 1989. (SCI, EI, 1.0)
421.
S. J. Chang, C. F. Huang, M. A. Kallel, K. L. Wang, R. C. Bowman, Jr. and
P. M. Adams, "Study of ultra-thin Ge/Si strain layer superlattices", J. Crystal
Growth, Vol. 95, No. 1-4, pp. 451-454, February 1989. (SCI, EI, 1.0)
422.
S. J. Chang, K. L. Wang, R. C. Bowman, Jr. and P. M. Adams,
"Interdiffusion in a symmetrically strained Ge/Si superlattice", Appl. Phys. Lett.,
Vol. 54, No. 13, pp. 1253-1255, March 1989. (SCI, EI, 1.0)
36
423.
A. Bindal, K. L. Wang, S. J. Chang, M. A. Kallel and P. K. Chu, "A process
simulation model for silicon ion implantation in undoped LEC-grown GaAs", J.
Electrochem. Soc., Vol. 136, No. 8, pp. 2414-2420, August 1989. (SCI, EI, 1.0)
424.
A, Bindal, K. L. Wang, S. J. Chang, M. A. Kallel, O. M. Stafsudd, "On the
nature of silicon activation efficiency in LEC-grown GaAs by
photoluminescence", J. Appl. Phys., Vol. 65, No. 3, pp. 1246-1252, February
1989. (SCI, EI, 1.0)
425.
S. J. Chang, C. F. Huang, M. A. Kallel, K. L. Wang, R. C. Bowman, Jr. and
P. M. Adams, "Growth and characterization of Ge/Si strained layer superlattices",
Appl. Phys. Lett., Vol. 53, No. 19. pp. 1835-1837, November 1988. (SCI, EI,
1.0)
426.
S. J. Chang, M. A. Kallel, K. L. Wang, R. C. Bowman, Jr. and P. Chow,
"Study of MBE-grown GexSi1-x/Si layers by Raman scattering", J. Appl. Phys.,
Vol. 64, No. 7, pp. 3634-3636, October 1988. (SCI, EI, 1.0)
B, Invited Talks on International Conferences
1. S. J. Chang, “High-brightness GaN-based light emitting diodes”, 2nd Advanced
Display and Optoelectronics Technology Workshop 2008 (ADOT 2008), in Daegu,
Korea
2. S. J. Chang, “GaN-based devices prepared on Si substrates”, 2008 Academic
Symposium on Optoelectronics & Microelectronics Technology (ASOMT2008), in
Harbin, China
3. S. J. Chang, “ESD Reliability of Nitride-Based LEDs”, The 5th International
Workshop on Industrial Technologies for Optoelectronic Semiconductors
(IWITOS’07), in Seoul, Korea
4. S. J. Chang, “InGaN/GaN MQW LEDs with ITO-based transparent upper contact
layers”, 5th International Symposium on Blue Lasers and LEDs (ISBLLED2004),
in Gyeongju, Korea
5. S. J. Chang and S. L. Wu, "Si1-xGex channel field effect transistors usingdoping
technique", First International Workshop on New Group IV (Si-Ge-C)
Semiconductors 2001 , in Kofu, Japan, 2001
6. C. Y. Su, S. L. Wu, S. J. Chang and L. P. Chen, "Strained Si1-xGex graded channel
PMOSFET grown by UHV/CVD", International Joint Conf. on Silicon Epitaxy
and Heterostructure 1999, in Zao, Japan
C. Patents:
1. Y. H. Wang, M. P. Hong, Y. K. Su, S. J. Chang, H. R. Wu and J. Y. Wu,
"Fabrication method for GaN MOSFETs", ROC patent No. 169680 (2003)
2. Y. K. Su, C. H. Chen, S. J. Chang and J. K. Sheu, "Structure of GaN MSM UV
37
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
photodetector and its fabrication method", ROC patent No. 169681 (2002)
F. S. Juang, Y. K. Su and S. J. Chang, "A modified suceptor structure for
epitaxial wafers", ROC patent No. 186781 (2002)
S. J. Chang, Y. K. Su and W. R. Chen, "Ohmic contact structure of II-VI
semiconductor and its fabrication process", US patent No. 6469319B1 (2002)
F. S. Juang, Y. K. Su and S. J. Chang, "A modified water cooled gas nozzle",
ROC patent No. 180792 (2002)
Y. K. Su, C. T. Lin, S. J. Chang, H. T. Huang, S. M. Chang and T. P. Sun, "Low
noise HgCdTe FIR photodetector and its fabrication method", ROC patent No.
120926 (2001)
Y. K. Su, S. J. Chang and W. R. Chen, "Ohmic contact structure of II-VI
semiconductor and its fabrication method", ROC patent No. 132585 (2001)
Y. K. Su, S. M. Chen, S. J. Chang and C. L. Lin, "Fabrication of InAs and GaSb
related photo-detectors, laser diodes and NDR devices by MOCVD, ROC patent
No. 104113 (1999)
Y. K. Su, W. L. Li, S. J. Chang and C. Y. Tsai, "Design of passive waveguide for
minimization of transverse beam dispersion in GaInP/AlGaInP visible quantum
well lasers", ROC patent No. 101681 (1999)
Y. K. Su, W. L. Li, S. J. Chang and C. Y. Tsai, "Red semiconductor laser of low
beam divergence", US patent No. 5923689 (1999)
Y. K. Su, C. Y. Tsai and S. J. Chang, "A new high efficiency NIP GaInP solar
cell", US patent No. 5911839 (1999)
C. Y. Tsai, Y. K. Su and S. J. Chang, "A new high efficiency NIP GaInP solar
cell", ROC patent No. 130666 (1998)
A. Taguchi, K. Takahei and S. J. Chang, "Quantum well structure", Japanese
Patent No. H3-194770 (1991)
K. Takahei, H. Nakagome, A. Taguchi and S. J. Chang, "Crystals with impurities
and their manufacturing methods", Japanese Patent No. H2-288659 (1990)
38