Appendix No 1
Requirements and technical parameters of the system for the fabrication of multilayer thin
metallic and dielectric film structures by means of sputter deposition.
TABLE
General data of the device
No.
I
1.
2.
3.
4.
5.
Name
II
Type
Production year
Country of manufacturer
Manufacturer
System
Requirement
III
Column for filling by tenderer*
IV
2016
Brand-new, not used in any
laboratory and not shown at
conferences, shows nor fairs
No
Parameter
Requirement
I
II
III
The equipment is dedicated to controlled and
repeatable deposition of thin metallic films on
AIII-BV semiconductor epitaxial structures.
The equipment has to guarantee 5%
thickness uniformity for film thicknesses in
range 10nm-500nm on a 4’’ substrate.
Deposition of metallic films (Ti, Al, Ni, Mo, Au
etc.) by means of magnetron sputtering and
electron-beam deposition. Sputtering also
possible in reactive mode with nitrogen. Also
sputtering with substrate bias. Substrate preclean by Ar ions. Substrate pre-clean by ion
gun.
1. A double chamber load-locked system
a. one dedicated chamber for sputter
deposition in the sputter up
configuration
b. one dedicated chamber for electronbeam deposition
c. one load lock joining the two above
chambers
2. Automatic motorized transfer under
vacuum of substrate holder between the
load lock and selected chamber
3. Equipped with bakeout tents.
4. PC with back-end PLC control of
sputtering and electron-beam deposition
processes, substrate biasing, sample
transfer, chamber and load lock pumping
etc.
6.
General requirements
7.
Types of processes
8.
System construction
K1/1/2016
specify
confirm
specify
specify
confirm
Column to be
filled by the
Tenderer*
IV
Confirm
Confirm
Confirm
1
Score
V
9.
Sputter deposition
chamber
1. Stainless steel construction, the
chamber equipped with a removable
shield guarding the chamber walls
from contamination.
2. Quartz viewport for source and
substrate view with a manual shutter
3. Cu-sealed flanges with the general
exception of the cathode mounting
shafts, necessary seals on the gate
valve to the load lock and throttle
valve.
4. Substrate stage with substrate bias
and rotation up to at least 20 rpm.
5. A RF substrate bias generator of at
least 600 W power with a dedicated
impedance matching box.
6. Rough pumped with an oil-free dry
scroll pump with a minimum pumping
speed of 200 l/minute. This pump can
be a single pump shared with the
other chamber and the load lock.
7. Equipped with a dedicated cryogenic
pump with a pumping speed of at
least 1500 l/s, not shared with the
second chamber
8. Two process gas lines for argon and
nitrogen with MKS MFCs calibrated
for these gases in the ranges of at
least 100 sccm for Ar and 20 sccm for
N2
9. One technical nitrogen line for
chamber venting. Venting with air is
not acceptable.
10. Active automatic upstream PID
pressure control using a VAT throttle
valve at the cryo pump in feed-back
with a capacitance manometer
11. Base vacuum lower than 1.0 e-7 torr
10.
Electron beam deposition
chamber
K1/1/2016
12. Chamber vacuum gauge reaching 5
e-8 torr.
1. Stainless steel construction equipped
with a removable shield guarding the
chamber walls from contamination.
2. Quartz viewport for source and
substrate view, with a manual shutter
3. Cu-sealed flanges with the exception
of the source mounting and necessary
seals on the gate valves to the load
lock and cryo.
4. Water cooled substrate stage with
rotation up to at least 20 rpm. Stage
to electron source distance at least
40 cm..
5. Equipped in a ion etch gun for
substrate precleaning Tecra IonEtch
Gen II or equivalent, with a 25 eV – 5
keV Energy range, maximum current
of 1 mA and working pressure in the
rage of 10e-3 – 10e-6 mbar.
Confirm
Confirm
Confirm
Confirm and
specify
Confirm and
specify
Confirm and
specify
Confirm and
specify
Confirm and
specify
Confirm
Confirm
Confirm and
specify
Confirm
Confirm
Confirm
Confirm
Confirm and
specify
Confirm and
specify
2
6. Rough pumped with an oil-free dry
scroll pump with a minimum pumping
speed of 200 l/minute. This pump can
be a single pump shared with the
other chamber and the load lock
7. Equipped with a dedicated cryogenic
pump with a pumping speed of at
least 1500 l/s, not shared with the
second chamber
8. Cryo pump isolated by a gate valve
9. One technical nitrogen line for
chamber venting. Venting with air is
not acceptable.
10. Base vacuum lower than 1.0 e-7 torr
11.
12.
Load lock
Sputter sources
11. Chamber vacuum gauge reaching 5e8 torr.
1. Stainless steel construction
2. Quartz viewport for substrate view
3. Cu-sealed flanges with the exception
of the load lock door, and necessary
seals on the gate valves to the
chambers.
4. Rough pumped with an oil-free dry
scroll pump with a minimum pumping
speed of 200 l/minute. This pump can
be a single pump shared with the two
chambers
5. Equipped with a dedicated
turbomolecular pump with pumping
speed of
50 l/s to75 l/s
more than 75 l/s
6. One technical nitrogen line for load
lock venting. Venting with air is not
acceptable.
7. Base vacuum lower than 1.0 e-5 torr
8. Chamber vacuum gauge reaching 1e6 torr.
1. Installed in the sputter deposition
chamber from section 9 above
2. Four confocal magnetically balanced
magnetron sputtering cathodes for
targets with 75 mm diameter (not 3”)
and thickness range at least 1 mm to
6 mm.
3. Cathodes water cooled
4. Cathodes equipped with chimneys
and automatically controlled shutters
for cross deposition blocking
5. Cathodes enabling quick target
change
6. Possibility of simultaneous deposition
from more than one cathode
7. Two DC power supplies for the
cathodes with maximum power not
lower than 600W
K1/1/2016
Confirm and
specify
Confirm and
specify
Confirm
Confirm
Confirm and
specify
Confirm and
specify
Confirm
Confirm
Confirm
Confirm and
specify
Confirm and
specify
0
1
Confirm
Confirm and
specify
Confirm and
specify
Confirm
Confirm and
specify
Confirm
Confirm
Confirm and
specify
Confirm
Confirm and
specify
3
13.
Electron beam source
14.
Targets provided with
sputtering system
15.
E-beam deposition
material provided with
sputtering system
16.
17.
Substrate holder
Control software
K1/1/2016
1. Installed in the electron beam
deposition chamber from section 10
above
2. An electron beam source with a
dedicated power supply of
5 kW/10 kV
More than 5 kW/10 kV
3. A holder for the materials to be
deposited with 6 water cooled pockets
of at least 7 cc each enabling
deposition of selected materials
individually and in programmable
sequences
4. Shutter enabling preliminary material
melting and conditioning prior to
actual deposition
5. Quartz crystal microbalance in the
chamber with a PID film thickness
control system enabling automatic
deposition of films with set thickness
as well as process and film preset
creation and running for at least 10
different processes. 5 spare quartz
crystals included on delivery of the
device
75 mm diameter / 3 mm thick, at least 99.99%
purity each: Ti, Al, Au and at least 99.95% for
Mo
4 cc in thermally insulating liners for crucibles
of at least 7 cc, at least 99.99% purity each:
Ti, Al, Ni, Au, AuGe and at least 99.95% for
Mo
1. Designed for the ‘deposit up’
configuration
2. Single holder suitable for both
sputtering and e-beam deposition
3. Transferrable automatically between
the load lock and selected chamber or
between the chambers when
required.
4. Compatible with rotation during
deposition and bias/preclean in the
sputter deposition chamber
5. Holding substrates of different shapes
and sizes from 5mmx5mm up to a
circle 4’’ in diameter.
1. With a graphic user interface
2. Controlling the deposition processes
in both chambers, transfer of sample
holder, selecting deposition sources
(cathodes and pockets), pump down
in chambers and load lock etc.
3. All features have to be accessible in
manual control for process engineers,
and some can be accessible in
automated batches for process
operators
Confirm
Confirm and
specify
0
2
Confirm and
specify
Confirm
Confirm
Confirm
Confirm
Confirm
Confirm
Confirm
Confirm
Confirm
Confirm
Confirm and
specify
Confirm
4
18.
Clean room compatibility
19.
Compatibility with the
infrastructure of the
Awarding Entity
4. Interlocked to prevent harm to
operator and equipment. Interlocks
overridable by the superuser for
specialized troubleshooting
5. With real time trending of process
variables and data logging
6. Enabling process recipe preparation
and running
All materials and parts used for the fabrication
of the system, accessories, paper copies of
instructions, electrical schematics etc. have to
be compatible with class 1000 clean-room
requirements
System construction has to enable its
transport:
 By means of an elevator 200 cm high,
160 cm wide (door opening width is
147 cm) and 200 cm deep with the
maximum load of 1000 kg
 Through a door 133 cm wide and 220
cm high
 Through a corridor 190 cm wide
Confirm and
specify
Confirm
Confirm
Confirm
Confirm
Maximum total height of the system including
any accessories cannot be greater than 248
cm after installation.
The system is adapted for operation in a
closed laboratory cooling water cycle with the
temperature of 15-20ºC, flow of 3,5 m3/h and
pressure of 5 bar.
20.
Two steps acceptance
test:
a) Preliminary acceptance
test at the factory
b) Final acceptance test at
IET after installation and
start-up of the system
Process deposition tests (according to point 7)
with and without bias in single target
sputtering and cosputtering modes as well as
electron-beam deposition, in order to test
uniformity of layers, repeatability of processes
and in – situ thickness control.
21.
Delivery time
Up to 26 weeks from the date of contract
22.
23.
24.
25.
26.
27.
28.
Free of charge three-day
training of 3 persons at
IET in Polish
Catalogue card in Polish
or English
Operating manual and
technical documentation in
Polish
Electrical schematics of
the system
All spare parts accessible
within 10 years after the
date of installation
Ensuring the certainty of
the after warranty service
in Polish language within
at least 10 years after the
date of installation
Ensuring the certainty of
the technical and process
support within at least 10
years.
K1/1/2016
Ensured
Attached catalogue cards of the offered
device model
Ensured
Confirm
Confirm and
specify
Confirm
Attach
Confirm and
specify
Hard paper copy of schematics at delivery of
the system
Confirm
Ensured
Confirm
Ensured
Confirm
Ensured
Confirm
5
29.
Warranty period
30.
Installation requirements
for the system
At least 12 months
18 months
24 months or longer
Requirements for electrical, gas and other
installations necessary for system installation
Specify
Attach or
specify
* It is highly recommended precisely and legibly fulfill column no. IV
……….. ..............................................................………
/signature of the contractor or his authorised representative/
K1/1/2016
6