5. Internal Memory
True or False:
1. T/F – Static RAM is a faster and more dense memory than DRAM.
ANS: F
2. T/F –The capability of being written into a stable state is one important property of
semiconductor memories.
ANS: T
3. T/F – DRAM uses set of transistors to store charge.
ANS: F
4. T/F – ROMs cannot be used even when only few bits are corrupted.
ANS: T
5. T/F – EPROMs and Flash memory use only a single transistor to store information in
each cell.
ANS: F
6. T/F – Vss and Gnd pins form the voltage source and ground pins in the DRAM
assembly.
ANS: T
7. T/F – The same power & ground pins are enough when programming the EPROM.
ANS: F
8. T/F – A memory bank can consist of a number of DRAM chips.
ANS: T
9. T/F – Hard failures in the memory cannot be repaired and hence have be replaced or
spares have to be added.
ANS: T
10. T/F – Hamming code is a typical error correcting mechanism used to repair Hard
failures.
ANS: F
11. T/F – Read-mostly memory is a type of random-access memory.
ANS: F
12. T/F – The horizontal lines of the memory array are called rows connect to the Data-In
terminal.
ANS: F
13. T/F – Memory interleaving is done using a group of memory cells.
ANS: F
14. T/F – The more the number of data bits, the lesser is the impact of error correcting bits
on the word length.
ANS: T
15. T/F – RDRAM has the highest clock speed and lowest access time among the DRAM
alternatives.
ANS: T
16. T/F – The DQS is a unidirectional data strobe signal.
ANS: F
Multiple Choice Questions:
1. An important attribute of RAM memories is
A. Random access & non-volatile
B. Volatile
C. Sequential access
D. None of the above
ANS: B
2. Which of the following is a type of DRAM
A. Advanced DRAM
B. DDR DRAM
C. RDR DRAM
D. None of the above
ANS: D
3. Important difference between SRAM and DRAM
A. Static/Dyn & no refresh for SRAM
B. Static/Dyn & no refresh for DRAM
C. no refresh for DRAM
D. None of the above
ANS: A
4. In a DRAM, depending on what is the cell value decided as 1 or 0.
A. Max capacitor charge
B. Transistor threshold voltage
C. DC voltage high
D. Input voltage
ANS: B
5. Why does DRAM support more memory cells in a given area than SRAM
A. DRAM has smaller cell
B. SRAM has large cell area
C. DRAM is more dense
D. All of the above
ANS: D
6. How long does a static SRM holds data
A. Eternally
B. Until power is supplied
C. Only during manufacturing
D. None of the above
ANS: B
7. How often/how is data written into the ROM
A. Anytime/when required
B. Before use – by microprogramming
C. During manufacturing
D. All of the above
ANS: C
8. What happens when a bit of data is incorrect in a ROM
A. Error correction will be used B. Redundancy will help
C. ROM cannot be used
D. None of the above
ANS: C
9. From the following, which type of memory is not a read-mostly memory?
A. EEPROM
B. PROM
C. Flash
D. EPROM
ANS: B
10. In a DRAM, refresh circuitry is added to help which unit?
A. Data buffer
B. Refresh counter
C. Timing and control
D. Column decoder
ANS: D
11. The most common pins on a memory chip package are:
A. Vcc and Vss
B. Write and read enable
C. Chip enable (CE) & Vpp
D. All of the above
ANS: A
12. When consecutive memory locations are stored in difference memory banks, it leads to
A. Speedup – parallel access
B. Increased latency
C. Does not help/degrade
D. None of the above
ANS: A
13. What signals provide timing to the chip
A. RAS and WE
B. RAS and CAS
C. Clock and WE
D. All of the above
ANS: B
14. Cause of hard failures are:
A. Manufacturing defects
C. Environmental protection
B. Radiation
D. All of the above
ANS: A
15. If one bit of the syndrome is set to 1, it means
A. Rewrite the entire word
B. Correction is required
C. Bit inversion is required
D. None of the above
ANS: D
16. What is the difference between SEC and SEC-DED in terms of the bits used?
A. SEC-DEC uses 1 extra bit
B. SEC uses two extra bits
C. SEC-DEC uses 1 bit less
D. None of the above
ANS: A
Fill up the blanks:
1. ____________ involve adding extra bits that are a function of the data.
ANS: Error correction
2. ____________ refers to the leaking tendency of storage charge.
ANS: Dynamic
3. ____________ can be used to store frequently accessed functions.
ANS: ROM
4. EPROM uses __________________ to erase out the data.
ANS: Ultra-violet light
5. The Vpp pin is used for ______________ in _______________ ROMS.
ANS: Programming, Programmable
6. A __________, ____________ event can cause soft errors.
ANS: Random, nondestructive
7. In ______________ mode, a series of data bits can be clocked out.
ANS: Burst
8. _____________ lines provide the location of the word to be selected.
ANS: Address
9. The vertical lines/columns of the memory array connect to the _________ terminal.
ANS: Sense
10. Due to their speed and other characteristics SRAMs are used in ________ and
DRAMs are used in ___________.
ANS: Cache, Main memory
11. A _______________ is the result obtained after a bit-by-bit comparison of the coded
words using an XOR.
ANS: Syndrome word
12. _______________ can send data to the processor more than once per cycle.
ANS: DDR SDRAM
13. In ____________ access, data moves in and out of the DRAM under the control of the
clock.
ANS: Synchronous
14. ______________ access is typically not used as it can create synchronization
problems.
ANS: Asynchronous
15. The RDRAM is used by Intel for its ____________ and _______________ families of
microprocessors.
ANS: Pentium and Itanium
16. _________ integrates a small DRAM in to an SRAM cache.
ANS: CDRAM