Atomic-scale charge transfer on self-assembled insulating and conducting
nanostructures on semiconductors
G. Dujardin, A. Bellec, F. Chiaravalloti, G. Comtet,
A.J. Mayne, D. Riedel
Laboratoire de Photophysique Moléculaire, Orsay, France
e-mail: gerald.dujardin@u-psud.fr
Self-assembled insulating (CaF2/Si(100), H/Si(100)) and conducting (epitaxial graphene on
6H-SiC(0001)) nanostructures on semiconductors offer outstanding structural and electronic
properties for future nanoelectronics. The scanning tunnelling microscope (STM) is used to
investigate charge transfer effects at the atomic-scale on these nanostructures. Charge transfer
is probed in the stationary mode by imaging quantum interference (graphene/SiC) and
quantum orbital (H/Si(100)) patterns on the surface. Direct measurements of charge transfer
across the surface is also performed by using the STM tip to locally inject charges and
activate at distance the movement of an adsorbed molecule (hexaphenyl/CaF2/Si(100)) or an
atom-switch (H/Si(100)).