Publication list of S. J. Chang 張守進著作目錄
A. Referred Papers:
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S. J. Chang, T. H. Chang, W. Y. Weng, C. J. Chiu and S. P. Chang, "Amorphous InGaZnO
ultraviolet phototransistors with a thin Ga2O3 layer", IEEE J. Sel. Top. Quan. Electron., Vol. 20,
No. 6, Art. no. 3803605, Novembre/December 2014.
C. W. Liu, S. J. Chang, C. H. Hsiao, K. Y. Lo, T. H. Kao, B. C. Wang, S. J. Yang, K. S. Tsai
and S. L. Wu, "Noise properties of low-temperature-grown Co-doped ZnO nanorods as
ultraviolet photodetectors", IEEE J. Sel. Top. Quan. Electron., Vol. 20, No. 6, Art. no. 3800707,
Novembre/December 2014.
W. K. Hsieh, K. T. Lam and S. J. Chang, "Characteristics of tantalum-doped silicon
oxide-based resistive random access memory", Mater. Sci. Semicond. Processing, Vol. 27, No.
1, pp. 293-296, November 2014.
M. R. Wu, C. J. Wu and S. J. Chang, "Investigation of defect modes in a defective photonic
crystal with a semiconductor metamaterial defect", Physica E, Vol. 64, pp. 146-151,
November 2014.
P. Y. Lee, S. P. Chang, E. H. Hsu and S. J. Chang, "Synthesis of CZTSe nanoink via a facile
one-pot heating route based on polyetheramine chelation", Sol. Energy Mater. Sol. Cells, Vol.
128, pp. 156-165, September 2014.
S. J. Chang, Y. L. Wu, W. Y. Weng, Y. H. Lin, W. K. Hsieh, J. K. Hsueh and C. L. Hsu,
"Ga2O3 films for photoelectrochemical hydrogen generation", J. Electrochem. Soc., Vol. 161,
No. 9, pp. H508-H511, September 2014.
T. H. Kao, S. L. Wu, C. Y. Wu, Y. K. Fang, B. C. Wang, P. C. Huang, C. M. Lai, C. W. Hsu,
Y. W. Chen, O. Cheng and S. J. Chang, "Impact of aluminum ion implantation on the low
frequency noise characteristics of Hf-based high-k/metal gate pMOSFETs", IEEE Electron.
Dev. Lett., Vol. 35, No. 9, pp. 954-956, September 2014.
C. K. Wang, Y. Z. Chiou, S. J. Chang, C. Y. Chang, T. H. Chiang, T. K. Lin and X. Q. Li,
“On the effect of quantum barrier thickness in the active region of nitride-based light emitting
diodes”, Solid-State Electron., Vol. 99, pp. 11-15, September 2014.
T. H. Kuo, S. J. Chang, Y. K. Fang, P. C. Huang, C. M. Lai, C. W. Hsu, Y. W. Chen, O. Cheng,
C. Y. Wu and S. L. Wu, “Investigation of trap properties in high-k/metal gate p-type
metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using
random telegraph noise analysis”, Appl. Phys. Lett., Vol. 105, No. 6, Art. no. 062109, August
2014.
C. J. Wang, S. C. Shei and S. J. Chang, "Novel solution process for synthesis of CIGS
nanoparticles using polyetheramine as solvent", Optical Mater. Express, Vol. 4, No. 8, pp.
1593-1600, August 2014.
S. J. Chang, C. I. Wu, and S. P. Chang, "See-through Si thin-film tandem solar cell module
with hardener", IEEE J. Photovoltaics, Vol. 4, No. 4, pp. 1013-1017, July 2014.
S. P. Chang, C. H. Wen and S. J. Chang, "Two-dimensional ZnO nanowalls for gas sensor and
photoelectrochemical applications", Electron. Mater. Lett., Vol. 10, No. 4, pp. 693-697, July
2014.
M. R. Wu, H. C. Hung, C. J. Wu and S. J. Chang, "Analysis of photonic bandgap structure for
a polaritonic photonic crystal in negative-index region", J. Opt. Soc. Am. B, Vol. 31, No. 7, pp.
1730-1734, July 2014.
S. J. Chang, C. Y. Chang, C. L. Tseng, C. S. Shen and B. Y. Chen, "Failure mechanism for
GaN-based high-voltage light-emitting diodes", IEEE Photon. Technol. Lett., Vol. 26, No. 11,
pp. 1073-1076, June 2014.
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15. M. H. Weng, S. J. Chang, W. Y. Chen, S. W. Lan, C. Y. Hung, Y. H. Su and H. Kuan, "A
triband bandpass filter with low loss and high band selectivity using the split-end asymmetric
stepped impedance resonators", Microwave Optical Technol. Lett., Vol. 56, No. 6, pp.
1427-1430, June 2014.
16. M. H. Weng, W. Y. Chen, S. W. Lan, S. J. Chang, H. Kuan and Y. H. Su, "A high selectivity
and wide stopband UWB bandpass filter using asymmetric SIRs with split-end", Microwave
Optical Technol. Lett., Vol. 56, No. 6, pp. 1353-1356, June 2014.
17. S. Y. Lin, S. J. Chang and T. J. Hsueh, "ZnO nanowires modified with Au nanoparticles for
nonenzymatic amperometric sensing of glucose", Appl. Phys. Lett., Vol. 104, No. 19, Art. no.
193704, May 2014.
18. Y. H. Liu, S. J. Young, L. W. Ji, T. H. Meen, C. H. Hsiao, C. S. Huang and S. J. Chang, "UV
enhanced field emission performance of Mg-doped ZnO nanorods", IEEE Tran. Electron. Dev.,
Vol. 61, No. 5, pp. 1541-1545, May 2014.
19. C. P. Liu, J. Y. Lin, Y. F. Liu and S. J. Chang, "Facile chemical method of etching polyimide
films for failure analysis (FA) applications and its etching mechanism studies", Microelectron.
Reliability, Vol. 54, No. 5, pp. 911-920, May 2014.
20. C. J. Wang, S. C. Shei and S. J. Chang, "Novel solution process for synthesis of CIGS
nanoparticles using polyetheramine as solvent", Mater. Lett., Vol. 122, pp. 52-54, May 2014.
21. C. W. Liu, S. J. Chang, C. H. Hsiao, R. J. Huang, Y. S. Lin, M. C. Su, P. H. Wang and K. Y.
Lo, "Probing surface structure quality of ZnO nanorods by second harmonic generation",
IEEE Photon. Technol. Lett., Vol. 26, No. 8, pp. 789-792, April 2014.
22. C. W. Li, S. P. Chang and S. J. Chang, "Electrical properties of amorphous zinc-indium-tin
oxide semiconductor thin-film transistors", Nanoscience and Nanotechnol. Lett., Vol. 6, No. 4,
pp. 273-278, April 2014.
23. T. H. Kuo, S. L. Wu, K. S. Tsai, Y. K. Fang, C. M. Lai, C. W. Hsu, Y. W. Chen, O. Cheng and
S. J. Chang, “Trap properties of high-k/metal gate pMOSFETs with aluminum ion
implantation by random telegraph noise and 1/f noise measurements”, Jpn. J. Appl. Phys., Vol.
53, No. 4, Art. no. 04EC14, April 2014.
24. Y. H. Liu, S. J. Young, C. H. Hsiao, L. W. Ji, T. H. Meen, W. Water and S. J. Chang,
"Visible-blind photodetectors with Mg-doped ZnO nanorods", IEEE Photon. Technol. Lett.,
Vol. 26, No. 7, pp. 645-648, April 2014.
25. W. K. Hsieh, K. T. Lam and S. J. Chang, "Asymmetric resistive switching characteristics of
In2O3:SiO2 cosputtered thin film memories", J. Vac. Sci. Technol. B, Vol. 32, No. 2, Art. no.
020603, March/April 2014.
26. C. C. Wong, S. P. Chang, H. F. Tu, C. H. Tseng, W. S. Chen and S. J. Chang, "Performance
enhancement of high-current injected electrically programmable fuse with compressive-stress
nitride layer", IEEE Electron. Dev. Lett., Vol. 35, No. 3, pp. 297-299, March 2014.
27. Y. T. Chen, C. T. Lin, W. T. Chiang, M. S. Lin, C. W. Yang, J. C. Ke and S. J. Chang, "ALD
TiN barrier metal for pMOS devices with a chemical oxide interfacial layer for 20-nm
technology node", IEEE Electron. Dev. Lett., Vol. 35, No. 3, pp. 306-308, March 2014.
28. S. J. Young, Y. H. Liu, C. H. Hsiao, S. J. Chang, B. C. Wang, T. H. Kao, K. S. Tsai and S. L.
Wu, "ZnO-based ultraviolet photodetectors with novel nanosheet structures", IEEE Tran.
Nanotechnol., Vol. 13, No. 2, pp. 238-244, March 2014.
29. P. H. Chen, C. H. Kuo, W. C. Lai, Y. A. Chen, L. C. Chang and S. J. Chang, "GaN-based
light-emitting diode with a p-InGaN layer", IEEE/OSA J. Display Technol., Vol. 10, No. 3, pp.
204-207, March 2014.
30. C. P. Liu, C. A. Dai, C. Y. Chao and S. J. Chang, "Novel proton exchange membrane based on
crosslinked poly(vinyl alcohol) for direct methanol fuel cells", J. Power Sources, Vol. 249, pp.
285-298, March 2014.
31. C. T. Yu, W. C. Lai, C. H. Yen and S. J. Chang, "Effects of InGaN layer thickness of
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AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency
droops of GaN-based light emitting diodes", Optics Express, Vol. 22, No. S3, pp. A663-A670,
March 2014.
C. T. Yu, W. C. Lai, C. H. Yen, H. C. Hsu and S. J. Chang, "Optoelectrical characteristics of
green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN",
Optics Express, Vol. 22, No. S3, pp. A633-A641, March 2014.
W. C. Lai, C. N. Lin, Y. C. Lai, P. C. Yu, G. C. Chi and S. J. Chang, "GaN-based
light-emitting diodes with grapheme/indium tin oxide transparent layer", Optics Express, Vol.
22, No. S2, pp. A396-A401, March 2014.
Y. M. Juan, H. T. Hsueh, T. C. Cheng, C. W. Wu and S. J. Chang, "Electron-field-emission
enhancement of CuO nanowires by UV illumination", ECS Solid-State Lett., Vol. 3, No. 3, pp.
P30-P32, March 2014.
S. J. Chang and Y. Y. Lin, "GaN-based light-emitting diodes with staircase electron injector
structure", IEEE/OSA J. Display Technol., Vol. 10, No. 2, pp. 162-166, February 2014.
Y. L. Wu, Q. P. Luan, S. J. Chang, Z. Y. Jiao, W. Y. Weng, Y. H. Lin and C. L. Hsu, "Highly
detective β-Ga2O3 nanowire isopropyl alcohol sensor", IEEE Sensors Journal, Vol. 14, No. 2,
pp. 401-405, February 2014.
P. J. Kuo. S. P. Chang and S. J. Chang, "Investigation of zinc-tin-oxide thin-film transistors
with varying SnO2 contents", Electron. Mater. Lett., Vol. 10, No. 1, pp. 89-94, Jaunary 2014.
L. M. Chang, S. J. Chang, D. S. Kuo, T. K. Ko, S. J. Hon and S. G. Li, "GaN-based LEDs
with rough surface and selective KOH etching", IEEE/OSA J. Display Technol., Vol. 10, No. 1,
pp. 27-32, Jaunary 2014.
S. J. Chang, B. G. Duan, C. H. Hsiao, C. W. Liu and S. J. Young, "UV enhanced emission
performance of low temperature grown Ga-doped ZnO nanorods", IEEE Photon. Technol.
Lett., Vol. 26, No. 1, pp. 66-69, January 2014.
S. H. Wang, T. Y. Tsai, S. J. Chang, W. Y. Weng, S. P. Chang and C. L. Hsu, "Enhanced field
emission of TiO2 nanowires with UV illumination", IEEE Electron. Dev. Lett., Vol. 35, No. 1,
pp. 123-125, January 2014.
P. Y. Lee, S. P. Chang, E. H. Hsu and S. J. Chang, "The Cu concentration effect on the
electro-optical properties of Cu2ZnSnSe4 thin films prepared by a non-vacuum solution-based
nano-inks process", Sci. Adv. Mater., Vol. 6, No. 1, pp. 18-26, January 2014.
S. B. Wang, R. S. Chen, S. J. Chang, H. C. Han, M. S. Wu, L. C. Chen and K. S. Chen,
"Surface plasmon resonance-induced color-selective Au-peapodded silica nanowire
photodetectors with high photoconductive gain", Nanoscale, Vol. 6, No. 3, pp. 1264-1270,
2014.
J. L. Hou, S. J. Chang, T. J. Hsueh, C. H. Wu, W. Y. Weng and J. M. Shieh, "InGaP/GaAs/Ge
triple-junction solar cells with ZnO nanowires", Progress in Photovoltaics, Vol. 21, No. 8, pp.
1645-1652, December 2013.
C. H. Hsiao, C. S. Huang, S. J. Young, J. J. Guo, C. W. Liu and S. J. Chang, "Optical and
structural properties of Ga-doped ZnO nanorods", J. Nanosci. Nanotechnol., Vol. 13, No. 12,
pp. 8320-8324, December 2013.
T. Y. Tsai, S. J. Chang, W. Y. Weng, S. Liu, C. L. Hsu, H. T. Hsueh and T. J. Hsueh, "β-Ga2O3
nanowires-based humidity sensors prepared on GaN/sapphire substrate", IEEE Sensors
Journal, Vol. 13, No. 12, pp. 4891-4896, December 2013.
S. J. Chang, B. G. Duan, C. W. Liu, C. H. Hsiao, S. J. Young and C. S. Huang, "UV enhanced
indium-doped ZnO field emitter", IEEE Tran. Electron. Dev., Vol. 60, No. 11, pp. 3901-3906,
November 2013.
C. T. Yu, W. C. Lai, C. H. Yen and S. J. Chang, "InN/GaN alternative growth of thick InGaN
wells on GaN-based light emitting diodes", Optical Mater. Express, Vol. 3, No. 11, pp.
1952-1959, November 2013.
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48. W. C. Lai, C. H. Yen, Y. Y. Yang, C. K. Wang and S. J. Chang, "GaN-based ultraviolet
light-emitting diodes with ex-situ sputtered AlN nucleation layer", IEEE/OSA J. Display
Technol., Vol. 9, No. 11, pp. 895-899, November 2013.
49. S. J. Chang, L. Lu, Y. Y. Lin and S. G. Li, "GaN-based light-emitting diodes with strain
compensation buffer layer", IEEE/OSA J. Display Technol., Vol. 9, No. 11, pp. 910-914,
November 2013.
50. Z. F. Zeng, S. C. Shei and S. J. Chang, "Improving light output power of AlGaInP-based
LEDs using GaP nanorods prepared by silver method", ECS Solid-State Lett., Vol. 2, No. 11,
pp. Q79-Q81, November 2013.
51. P. Y. Lee, S. P. Chang and S. J. Chang, "Fabrication and photoelectrochemical behavior of
n-type Cu2ZnSnSe4 thin-film electrodes prepared via non-vacuum nanoinks process", ECS J.
Solid-State Sci. Technol., Vol. 2, No. 11, pp. Q220-Q223, November 2013.
52. S. J. Chang, C. W. Liu, C. H. Hsiao, K. Y. Lo, S. J. Young, T. H. Kao, K. S. Tsai and S. L. Wu,
"Noise properties of Fe-ZnO nanorod ultraviolet photodetectors", IEEE Photon. Technol. Lett.,
Vol. 25, No. 21, pp. 2089-2092, November 2013.
53. S. J. Chang, B. G. Duan, C. H. Hsiao, S. J. Young, B. C. Wang, T. H. Kao, K. S. Tsai and S. L.
Wu, "Low-frequency noise characteristics of In-doped ZnO ultraviolet photodetectors", IEEE
Photon. Technol. Lett., Vol. 25, No. 21, pp. 2043-2046, November 2013.
54. Z. D. Lin, S. J. Young, C. H. Hsiao and S. J. Chang, "Adsorption sensitivity of Ag-decorated
carbon nanotubes towardgas-phase compounds", Sensors and Actuators B, Vol. 188, pp.
1230-1234, November 2013.
55. W. C. Lai, C. H. Yen and S. J. Chang, "GaN-based green-light-emitting diodes with InN/GaN
growth-switched InGaN wells ", Appl. Phys. Express, Vol. 6, No. 10, Art. No. 102101, October
2013.
56. S. J. Chang, X. F. Zeng, S. C. Shei and S. G. Li, "AlGaInP-based LEDs with AuBe-diffused
AZO/GaP current spreading layer", IEEE J. Quan. Electron., Vol. 49, No. 10, pp. 846-851,
October 2013.
57. P. Y. Lee, S. C. Shei and S. J. Chang, "Evolution pathways for the formation of
nano-Cu2ZnSnSe4 absorber materials via elemental sources and isophorondiamine chelation",
J. Alloys and Compounds, Vol. 574, pp. 27-32, October 2013.
58. C. I. Wu, S. P. Chang and S. J. Chang, "Method for improving the stability of gen 5 silicon
thin-film tandem solar cell", IEEE J. Photovoltaics, Vol. 3, No. 4, pp. 1140-1143, October
2013.
59. S. C. Hung, Q. P. Luan, H. Y. Lin, S. G. Li and S. J. Chang, "Embedded-Ge source and drain
in InGaAs/GaAs dual channel MESFET", Current Appl. Phys., Vol. 13, pp. 1577-1580,
October 2013.
60. M. H. Wu, S. P. Chang, W. Y. Liao, M. T. Chu and S. J. Chang, "Efficiency of GaN/InGaN
double-heterojunction photovoltaic cells under concentrated illumination", Surface and
Coating Technol., Vol. 231, pp. 253-256, September 2013.
61. Z. D. Huang, W. Y. Weng, S. J. Chang, Y. F. Hua, C. J. Chiu and T. Y. Tsai,
"Ga2O3/GaN-based metal-semiconductor-metal photodetectors covered with Au
nanoparticles", IEEE Photon. Technol. Lett., Vol. 25, No. 18, pp. 1809-1811, September 2013.
62. H. T. Hsueh, W. Y. Weng, T. Y. Tsai and S. J. Chang, "Electron-field-emission properties of
gallium compound by ammonification of Ga2O3 nanowires", IEEE Tran. Nanotechnol., Vol.
12, No. 5, pp. 692-695, September 2013.
63. Z. D. Huang, W. Y. Weng, S. J. Chang, C. J. Chiu, T. J. Hsueh and S. L. Wu,
"Ga2O3/AlGaN/GaN heterostructure ultraviolet three-band photodetector", IEEE Sensors
Journal, Vol. 13, No. 9, pp. 3462-3467, September 2013.
64. J. L. Hou, S. J. Chang, C. H. Wu and T. J. Hsueh, "Self-powered ZnO nanowire UV
photodetector integrated with GaInP/GaAs/Ge solar cell", IEEE Electron. Dev. Lett., Vol. 34,
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No. 8, pp. 1023-1025, August 2013.
Z. S. Hu, F. Y. Hung, K. J. Chen, S. J. Chang, W. K. Hsieh, T. Y. Liao and T. P. Chen,
"Recovery of thermal-degraded ZnO photodetector by embedding nano silver oxide
nanoparticles", Appl. Sur. Sci., Vol. 279, pp. 31-35, August 2013.
W. C. Lai, C. H. Yen, J. Z. Li, Y. Y. Yang, H. E. Cheng, S. J. Chang and S. G. Li, "GaN-based
light-emitting diodes on electrochemically etched n--GaN template", IEEE Photon. Technol.
Lett., Vol. 25, No. 15, pp. 1531-1534, August 2013.
S. J. Chang, J. L. Hou, T. J. Hsueh, K. T. Lam, S. G. Li, C. H. Liu and S. P. Chang,
"Triple-junction GaInP/GaAs/Ge solar cells with an AZO transparent electrode and ZnO
nanowires", IEEE J. Photovoltaics, Vol. 3, No. 3, pp. 991-996, July 2013.
S. C. Tsai, S. L. Wu, B. C. Wang, S. J. Chang, C. H. Hsu, C. W. Yang, C. M. Lai, C. W. Hsu,
O. Cheng, P. C. Huang and J. F. Chen, "Low-frequency noise characteristics for various
ZrO2-added HfO2-based 28-nm high-k/metal-gate nMOSFETs", IEEE Electron. Dev. Lett., Vol.
34, No. 7, pp. 834-836, July 2013.
P. Y. Lee, S. C. Shei, E. H. Hsu and S. J. Chang, "A novel synthesis of Cu2SnSe3 nanoink
prepared via elemental sources and isophorondiamine chelation", Mater. Lett., Vol. 102, pp.
120-122, July 2013.
P. Y. Lee, S. P. Chang and S. J. Chang, "Synthesis and optical properties of ZnO thin films
prepared by SILAR method with ethylene glycol", Adv. Nano Research, Vol. 1, No. 2, pp.
93-103, July 2013.
S. Y. Lin, S. J. Chang and T. J. Hsueh, "ZnO Nanowires modified with Au nanoparticles
exhibiting high field-emission performance", ECS J. Solid-State Sci. Technol., Vol. 2, No. 7,
pp. N149-N151, July 2013.
C. W. Liu, S. J. Chang, C. H. Hsiao, C. C. Liu, R. J. Huang,Y. S. Lin, M. C. Su, P. H. Wang
and K. Y. Lo, "Diluted magnetic nanosemiconductor: Fe-doped ZnO vertically aligned
nanorod arrays grown by hydrothermal synthesis", IEEE Tran. Nanotechnol., Vol. 12, No. 4,
pp. 649-655, July 2013.
T. P. Chen, K. H. Lee, S. P. Chang, S. J. Chang and P. C. Chang, "Effect of surface
modification by self-assembled monolayer on the ZnO film ultraviolet sensor", Appl. Phys.
Lett., Vol. 103, Art. no. 022101, July 2013.
T. H. Chang, C. J. Chiu, S. J. Chang, T. Y. Tsai, Z. D. Huang and W. Y. Weng, "Amorphous
InGaZnO ultraviolet phototransistors with double-stack Ga2O3/SiO2 dielectric", Appl. Phys.
Lett., Vol. 102, No. 22, Art. no. 221104, June 2013.
C. M. Lee, S. P. Chang, S. J. Chang and C. I. Wu, "Fabrication of high-efficiency silicon solar
cells by ion implant process", Int. J. Electrochem. Sci., vol. 8, pp. 7634-7645, June 2013
Z. D. Lin, S. J. Young, C. H. Hsiao, S. J. Chang and C. S. Huang, "Improved field emission
properties of Ag-decorated multi-walled carbon nanotubes", IEEE Photon. Technol. Lett., Vol.
25, No. 11, pp. 1017-1019, June 2013.
C. H. Hsiao, C. S. Huang, S. J. Young, S. J. Chang, J. J. Guo. C. W. Liu and T. Y. Yang,
"Field-emission and photoelectrical characteristics of Ga-ZnO nanorods photodetector", IEEE
Tran. Electron. Dev., Vol. 60, No. 6, pp. 1905-1910, June 2013.
T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao, L. W. Ji, Y. J. Hsu and S. L. Wu,
"Low-frequency noise characteristics of ZnO nanorod Schottky barrier photodetectors", IEEE
Sensors Journal, Vol. 13, No. 6, pp. 2115-2119, June 2013.
Y. L. Wu, S. J. Chang, W. Y. Weng, C. H. Liu, T. Y. Tsai, C. L. Hsu and K. C. Chen, "Ga2O3
nanowire photodetector prepared on SiO2/Si template", IEEE Sensors Journal, Vol. 13, No. 6,
pp. 2368-2373, June 2013.
Z. D. Lin, C. H. Hsiao, S. J. Young, C. S. Huang, S. J. Chang and S. B. Wang, "Carbon
nanotubes with adsorbed Au for sensing gas", IEEE Sensors Journal, Vol. 13, No. 6, pp.
2423-2427, June 2013.
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81. S. P. Chang, T. H. Yang, C. J. Ho and S. J. Chang, "Effect of oxygen partial pressure on
electrical characteristics of amorphous indium-gallium-zinc-oxide thin-film transistors", J.
Nanoelectron. Optoelectron., Vol. 8, No. 4, pp. 361-365, June 2013.
82. P. Y. Lee, S. C. Shei, E. H. Hsu, S. J. Chang and S. P. Chang, "Synthesis of Cu2ZnSnSe4
nanocrystals from metal sources using a facile process in isophorondiamine", Mater. Lett., Vol.
98, pp. 71-73, May 2013.
83. Y. L. Wu, S. J. Chang, C. H. Liu, W. Y. Weng, T. Y. Tsai and C. L. Hsu, "UV enhanced field
emission for β-Ga2O3 nanowires", IEEE Electron. Dev. Lett., Vol. 34, No. 5, pp. 701-703, May
2013.
84. S. B. Wang, Y. F. Huang, S. Chattopadhyay, S. J. Chang, R. S. Chen, C. W. Chong, M. S. Hu,
L. C. Chen and K. H. Chen, "Surface plasmon-enhanced gas sensing in single gold-peapodded
silica nanowires", NPG Asian Mater., Vol. 5, e49; doi:10.1038/am, May 2013.
85. H. M. Chang, Y. Y. Yang, W. C. Lai, S. G. Li, Y. R. Lin, Z. Y. Jiao and S. J. Chang,
"GaN-based light-emitting diodes with step graded-refractive index (ZnO)x(SiO2)1-x
micropillar array", IEEE/OSA J. Display Technol., Vol. 9, No. 5, pp. 353-358, May 2013.
86. W. Zhang, P. C. Liu, B. Jackson, T. S. Sun, S. J. Huang, H. C. Hsu, Y. K. Su, S. J. Chang, L.
Li, D. Li, L. Wang, X. D. Hu and Y. H. Xie, "Dislocation reduction through nucleation and
growth selectivity of metal-organic chemical vapor deposition GaN", J. Appl. Phys., Vol. 113,
No. 14, Art. no. 144908, April 2013.
87. H. Y. Chen, R. Y. Yang and S. J. Chang, "Microstructure and photoluminescent properties of
BaY2ZnO5:Tb3+ phosphors with addition of lithium carbonate", Mater. Sci. Eng. B, Vol. 178,
No. 6, pp. 375-379, April 2013.
88. Z. D. Huang, W. Y. Weng, S. J. Chang, Y. F. Hua, C. J. Chiu, T. J. Hsueh and S. L. Wu,
"InGaN/GaN multiquantum well metal-semiconductor-metal photodetectors with belta-Ga2O3
layers", IEEE Sensors J., Vol. 13, No. 4, pp. 1187-1191, April 2013.
89. S. J. Chang, Y. Y. Lin, C. H. Liu, S. G. Li, T. K. To and S. J. Hon, "Numerical simulation of
GaN-based LEDs with chirped multiquantum barrier structure", IEEE J. Quan. Electron., Vol.
49, No. 4, pp. 436-442, April 2013.
90. T. Y. Tsai, S. J. Chang, W. Y. Weng, S. G. Li, S. Liu, C. L. Hsu, H. T. Hsueh and T. J. Hsueh,
"GaN nanowire field emitters with the adsorption of Au nanoparticles", IEEE Electron. Dev.
Lett., Vol. 34, No. 4, pp. 553-555, April 2013.
91. C. K. Wang, T. H. Chiang, K. Y. Chen, Y. Z. Chiou, T. K. Lin, S. P. Chang, and S. J. Chang,
"Investigating the effect of piezoelectric polarization on GaN-based LEDs with different
quantum barrier thickness", IEEE/OSA J. Display Technol., Vol. 9, No. 4, pp. 207-212, April
2013.
92. S. F. Yu, R. M. Lin, S. J. Chang, J. R. Chen, J. Y. Chu, C. T. Kuo, and Z. Y. Jiao, "Improved
carrier distributions by varying barrier thickness for InGaN/GaN LEDs", IEEE/OSA J. Display
Technol., Vol. 9, No. 4, pp. 239-243, April 2013.
93. H. M. Chang, W. C. Lai and S. J. Chang, "Effects of initial GaN growth mode on patterned
sapphire on the opto-electrical characteristics of GaN-based light-emitting diodes", IEEE/OSA
J. Display Technol., Vol. 9, No. 4, pp. 292-296, April 2013.
94. K. H. Lee, P. C. Chang and S. J. Chang, "AlGaN/GaN high electron mobility transistors
based on InGaN/GaN multi-quantum-well structures with photo-chemical vapor deposition of
SiO2 dielectrics", Microelectron. Eng., Vol. 104, pp. 105-109, April 2013.
95. J. L. Hou, S. J. Chang and S. P. Chang, "A ZnO nanowire photodetector with an Ir electrode
integrated on a triple junction solar cell", Int. J. Electrochem. Sci., Vol. 8, No. 4, pp.
5650-5656, April 2013.
96. T. P. Chen, F. Y. Hung, S. P. Chang, S. J. Chang, Z. S. Hu and K. J. Chen, "Optoelectronic
properties of thermally evaporated ZnO films with nanowalls on glass substrates", Appl. Phys.
Express, Vol. 6, No. 4, Art. no. 045201, April 2013.
6
97. Y. T. Chen, S. I. Fu, C. T. Lin, W. T. Chiang, S. J. Chang, M. S. Lin and J. S. Jeng, "Effects of
postdeposition annealing on a high-k-last/gate-last integration scheme for 20 nm nMOS and
pMOS", J. Vac. Sci. Technol. B, Vol. 31, No. 2, Art. no. 020604, March/April 2013.
98. T. P. Chen, S. P. Chang, F. Y. Hung, S. J. Chang, Z. S. Hu and K. J. Chen, "Simple fabrication
process for 2D ZnO nanowalls and their potential application as a methane sensor", Sensors,
Vol. 13, No. 3, pp. 3941-3950, March 2013.
99. K. H. Lee, S. P. Chang, K. W. Liu, P. C. Chang, S. J. Chang, T. P. Chen, H. W. Shiu, L. Y.
Chang and C. H. Chen, "Epitaxial growth of InN nanorods on nitridated chromium
nanoislands under the In-rich regime", Int. J. Electrochem. Sci., Vol. 8, No. 3, pp. 3212-3228,
March 2013.
100. S. B. Wang, C. H. Hsiao, S. C. Hung, S. J. Chang, S. J. Young, B. C. Huang, S. L. Wu, B. R.
Huang and H. C. Han, "One step fabrication of low noise CuO nanowire-bridge gas sensor",
Int. J. Electrochem. Sci., Vol. 8, No. 3, pp. 3472-3482, March 2013.
101. P. Y. Lee, S. P. Chang, P. J. Kuo, E. H. Hsu, S. J. Chang and S. C. Chang, "Sensing
performance of EGFET pH sensors with CZTSe nanoparticles fabricated on glass substrates",
Int. J. Electrochem. Sci., Vol. 8, No. 3, pp. 3866-3875, March 2013.
102. J. L. Hou, S. J. Chang, M. C. Chen, C. H. Liu, T. J. Hsueh, J. K. Sheu and S. Li, "GaN-based
planar p-i-n photodetectors with the Be-implanted isolation ring", IEEE Tran. Electron. Dev.,
Vol. 60, No. 3, pp. 1178-1182, March 2013.
103. S. B. Wang, C. H. Hsiao, S. J. Chang, Y. Z. Jiao, S. J. Young, S. C. Hung and B. R. Huang,
"ZnO branched nanowires and the p-CuO/n-ZnO heterojunction nanostructured photodetector",
IEEE Tran. Nanotechnol., Vol. 12, No. 2, pp. 263-269, March 2013.
104. K. H. Lee, P. C. Chang, T. P. Chen, S. P. Chang, H. W. Shiu, L. Y. Chang and S. J. Chang,
"Synchrotron radiation based cross-sectional scanning photoelectron microscopy and
spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction", Appl. Phys. Lett., Vol. 102, No. 7, Art.
no. 072104, February 2013.
105. C. W. Liu, S. J. Chang, C. C. Liu, and K. Y. Lo, "Inspecting the surface of implanted Si(111)
during annealing by reflective second harmonic generation: The influence of chamber
pressure", Thin Solid Films, Vol. 529, pp. 282-286, February 2013.
106. T. P. Chen, F. Y. Hung, S. P. Chang, S. J. Chang, S. L. Wu and Z. S. Hu, "Noise properties of
ZnO nanowalls deposited using rapid thermal evaporation technology", IEEE Photon. Technol.
Lett., Vol. 25, No. 3, pp. 213-216, February 2013.
107. H. Y. Chen, R. Y. Yang and S. J. Chang, "Different alkali carbonates on the microstructure and
photoluminescence properties of BaY2ZnO5:Tb3+ phosphors prepared using the solid-state
method", J. Phys. Chem. Solid, Vol. 74, No. 2, pp. 344-347, February 2013
108. B. C. Wang, S. L. Wu, Y. Y. Lu, S. J. Chang, J. F. Chen, S. C. Tsai, C. H. Hsu, C. W. Yang, C.
G. Chen, O. Cheng and P. C. Huang, "Comparison of the trap behavior between ZrO2 and
HfO2 gate stack nMOSFETs by 1/f noise and random telegraph noise", IEEE Electron. Dev.
Lett., Vol. 34, No. 2, pp. 151-153, February 2013.
109. C. K. Chang, S. Kataria, C. C. Kuo, A. Ganguly, B. Y. Wang, J. Y. Hwang, K. J. Huang, W. H.
Yang, S. B. Wang, C. H. Chuang, M. Chen, C. I. Huang, W. F. Pong, K. J. Song, S. J. Chang,
J. H. Guo, Y. Tai, M. Tsujimoto, S. Isoda, C. W. Chen, L. C. Chen and K. H. Chen, "Band gap
engineering of chemical vapor deposited graphene by in situ BN doping", ACS Nano, Vol. 7,
No. 2, pp. 1333-1341, February 2013.
110. Z. S. Hu, F. Y. Hung, K. J. Chen, S. J. Chang, W. K. Hsieh and T. Y. Liao, "Improvement in
thermal degradation of ZnO photodetector by embedding silver oxide nanoparticles",
Functional Mater. Lett., Vol. 06, No. 1, Art. no. 1350001, February 2013.
111. T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao and S. L. Wu, "Photoelectrical and
low-frequency noise characteristics of ZnO nanorod photodetectors prepared on flexible
substrate", IEEE Tran. Electron. Dev., Vol. 60, No. 1, pp. 229-234, January 2013.
7
112. C. Y. Chang, S. J. Chang, C. H. Liu, S. G. Li and E. Chen, "GaN-based LEDs with an
HT-AlN nucleation layer prepared on patterned sapphire substrate", IEEE Photon. Technol.
Lett., Vol. 25, No. 1, pp. 88-90, January 2013.
113. X. F. Zeng, S. C. Shei, H. M. Lo and S. J. Chang, "Enhancement of output power for
GaN-based LEDs by treatments of Ar plasma on p-GaN surface", J. Nanomater., Art. no.
813153, 2013.
114. X. F. Zeng, S. C. Shei and S. J. Chang, "SiO2 nanopillars on microscale roughened surface of
GaN-based light-emitting diodes by SILVER-based method", J. Nanomater., Art. no. 753230,
2013.
115. C. I. Wu, S. J. Chang, K. T. Lam, S. G. Li and S. P. Chang, “Low cost amorphous silicon
intrinsic layer for thin-film tandem solar cells”, International J. Photoenergy, Vol. 2013,
Article no. 183626, 2013
116. C. M. Lee, S. P. Chang, S. J. Chang and C. I. Wu, “P-type quasi-mono silicon solar cell
fabricated by ion implantation”, International J. Photoenergy, Vol. 2013, Article no. 171390,
2013
117. K. H. Lee, S. P. Chang, K. W. Liu, P. C. Chang, S. J. Chang, T. P. Chen, H. W. Shiu, L. Y.
Chang and C. H. Chen, "Growth of InN nanorods on glass substrates by molecular beam
heteroepitaxy", Sci. Adv. Mater., Vol. 5, pp. 873-880, 2013.
118. N. M. Lin, S. C. Shei and S. J. Chang, "GaN-based light-emitting diodes with a thermally
stable mirror structure underneath an insulating SiO2 layer", IET Optoelectron., Vol. 6, No. 6,
pp. 277-281, December 2012.
119. S. Li, D. S. Kuo, C. H. Liu, S. C. Hung and S. J. Chang, "Efficiency improvement of
GaN-based light-emitting diodes by direct wet etching of indium-tin-oxide layer", IET
Optoelectron., Vol. 6, No. 6, pp. 303-306, December 2012.
120. T. H. Chang, C. J. Chiu, W. Y. Weng, S. J. Chang, T. Y. Tsai, and Z. D. Huang, "High
responsivity of amorphous indium gallium zinc oxide phototransistor with Ta2O5 gate
dielectric", Appl. Phys. Lett., Vol. 101, No. 26, Art. no. 261112, December 2012.
121. C. M. Lee, S. P. Chang, S. J. Chang and C. I. Wu, "High-efficiency Si solar cell fabricated by
ion implantation and inline backside rounding process", International J. Photoenergy, Vol.
2012, Art. no. 670981, 2012.
122. F. Y. Hung, T. S. Lui, Z. S. Hu, S. J. Chang, L. H. Chen and K. J. Chen, "The effects of
crystallization on mechanical mechanism and residual stress of sputtered Ag thin films", Mater.
Trans., Vol. 53, No. 11, pp. 2049-2055, November 2012.
123. S. J. Chang, T. Y. Tsai, Z. Y. Jiao, C. J. Chiu, W. Y. Weng, S. H. Wang, C. L. Hsu, T. J. Hsueh
and S. L. Wu, "A TiO2 nanowire MIS photodetector with polymer insulator", IEEE Electron.
Dev. Lett., Vol. 33, No. 11, pp. 1577-1579, November 2012.
124. Z. D. Huang, R. W. Chuang, W. Y. Weng, S. J. Chang, C. J. Chiu, T. J. Hsueh and S. L. Wu,
"GaN Schottky barrier photodetectors with a β-Ga2O3 cap layer", Appl. Phys. Express, Vol. 6,
No. 11, Art. no. 116701, November 2012.
125. T. Y. Tsai, S. J. Chang, T. J. Hsueh, C. L. Hsu, W. Y. Weng and J. M. Shieh, "A Si nanowire
photovoltaic device prepared by selective electroless etching", IEEE Tran. Nanotechnol., Vol.
11, No. 6, pp. 1148-1150, November 2012.
126. S. P. Chang, C. W. Li, K. J. Chen, S. J. Chang, C. L. Hsu, T. J. Hsueh and H. T. Hsueh,
"ZnO-nanowire-based extended-gate field-effect-transistor pH sensors prepared on glass
substrate", Sci. Adv. Mater., Vol. 4, No. 11, pp. 1174-1178, November 2012.
127. C. Y. Chang, S. J. Chang, C. H. Liu, S. G. Li and T. K. Lin, "GaN-based LEDs with double
strain releasing MQWs and Si delta-doping layers", IEEE Photon. Technol. Lett., Vol. 24, No.
20, pp. 1809-1811, October 2012.
128. S. J. Chang, S. F. Yu, R. M. Lin, S. G. Li, T. H. Chiang, S. P. Chang and C. H. Chen,
"InGaN-based light-emitting diodes with an AlGaN staircase electron blocking layer", IEEE
8
Photon. Technol. Lett., Vol. 24, No. 19, pp. 1737-1740, October 2012.
129. Y. Y. Lin, R. W. Chuang, S. J. Chang, S. G. Li, Z. Y. Jiao, T. K. Ko and C. H. Liu, "GaN-based
LEDs with a chirped multiquantum barrier structure", IEEE Photon. Technol. Lett., Vol. 24,
No. 18, pp. 1600-1602, September 2012.
130. T. Y. Tsai, S. J. Chang, W. Y. Weng, S. H. Wang, C. J. Chiu, C. L. Hsu and T. J. Hsueh, "TiO2
nanowires UV photodetectors with Ir Schottky contacts", IEEE Photon. Technol. Lett., Vol. 24,
No. 18, pp. 1584-1586, September 2012.
131. H. F. Chiu, S. L. Wu, Y. S. Chang, S. J. Chang, J. F. Chen, S. C. Tsai, C. H. Hsu, C. M. Lai,
C. W. Hsu and O. Cheng, "Impact of oxygen annealing on high-k gate stack defects
characterized by random telegraph noise", Appl. Phys. Lett., Vol. 101, No. 12, Art. no. 122105,
September 2012.
132. T. P. Chen, S. J. Young, S. J. Chang, B. R. Huang, S. M. Wang, C. H. Hsiao, S, L. Wu and C.
B. Yang, "Low-frequency noise characteristics of GaN Schottky barrier photodetectors
prepared with nickel annealing", IEEE Sensors Journal, Vol. 12, No. 9, pp. 2824-2829,
September 2012.
133. M. H. Wu, S. P. Chang, S. J. Chang, R. H. Horng, W. Y. Liao, R. M. Lin, "Characteristics of
GaN/InGaN double-heterostructure photovoltaic cells", International J. Photoenergy, Vol.
2012, Art. no. 206174, 2012.
134. Z. S. Hu, F. Y. Hung, S. J. Chang, B. R. Huang, B. C. Lin, W. K. Hsieh and K. J. Chen,
"Effect of Ag film thickness on the crystallization mechanism and photoluminescence
properties of ZnO/Ag nanoflower arrays", Appl. Sur. Sci., Vol. 258, No. 20, pp. 8049-8054,
August 2012.
135. R. M. Lin, S. F. Yu, S. J. Chang, T. H. Chiang, S. P. Chang and C. H. Chen, "Inserting a
p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in
InGaN-based light-emitting diodes", Appl. Phys. Lett., Vol. 101, No. 8, Art. no. 081120,
August 2012.
136. N. M. Lin, S. C. Shei and S. J. Chang, "Investigation of Ni/Ag contact to p-GaN with an O2
plasma treatment and its application to GaN-based LEDs", Phys. Status Solidi A, Vol. 209, No.
8, pp. 1568-1574, August 2012.
137. S. C. Shei, P. Y. Lee and S. J. Chang, "Effect of temperature on the deposition of ZnO thin
films by successive ionic layer adsorption and reaction", Appl. Sur. Sci., Vol. 258, No. 20, pp.
8109-8116, August 2012.
138. L. M. Chang, S. J. Chang, Z. Y. Jiao, C. F. Shen, T. K. Ko, S. J. Hon, Y. Z. Chiou and H. Y.
Chiou, "Enhanced current spreading for GaN-based side-view LEDs by adding an metallic
stripe across the long side of the chip", IEEE Photon. Technol. Lett., Vol. 24, No. 16, pp.
1412-1414, August 2012.
139. Y. Shen, S. G. Li, D. S. Kuo, S. J. Chang, K. T. Lam and K. H. Wen, "GaN-based
light-emitting diodes with embedded air void arrays", J. Vac. Sci. Technol. B, Vol. 30, No. 4,
Art. no. 041207, July/August 2012
140. B. C. Wang, S. L. Wu, C. W. Huang, Y. Y. Lu, S. J. Chang, Y. M. Lin, K. H. Lee and O. Cheng,
"Correlation between random telegraph noise and 1/f noise parameters in 28-nm pMOSFETs
with tip-shaped SiGe source/drain", IEEE Electron. Dev. Lett., Vol. 33, No. 7, pp. 928-930,
July 2012.
141. Y. T. Chen, S. I. Fu, W. T. Chiang, C. T. Lin, S. H. Tsai, S. W. Wang and S. J. Chang,
"Chemical oxide interfacial layer for the high-k-last/gate-last integration scheme", IEEE
Electron. Dev. Lett., Vol. 33, No. 7, pp. 946-948, July 2012.
142. T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao and Y. J. Hsu, "Bending effects of ZnO
nanorods metal-semiconductor-metal photodetectors on flexible polyimide substrate",
Nanoscale Research Lett., Vol. 7, Art. no. 214, July 2012.
143. S. F. Yu, S. P. Chang, S. J. Chang, R. M. Lin, H. H. Wu and W. C. Hsu, "Characteristics of
9
InGaN-based light-emitting diodes on patterned sapphire substrates with various pattern
heights", J. Nanomater., Art. no. 346915, 2012.
144. K. H. Lee, P. C. Chang, S. J. Chang and Y. K. Su, “AlGaN/GaN heterostructure field-effect
transistors with multi-MgxNy/GaN buffer and photo-CVD SiO2 gate dielectric”, Solid-State
Electron., Vol. 72, No. 12, pp. 1018-1020, June 2012.
145. S. B. Wang, C. H. Hsiao, S. J. Chang, K. T. Lam, K. H. Wen, S. J. Young, S. C. Hung and B.
R. Huang, "CuO nanowire-based humidity sensor", IEEE Sensors Journal, Vol. 12, No. 6, pp.
1884-1888, June 2012.
146. S. B. Wang, M. S. Hu, S. J. Chang, C. W. Chong, H. C. Han, B. R. Huang, L. C. Chen and K.
S. Chen, "Gold nanoparticle-modulated conductivity in gold peapodded silica nanowires",
Nanoscale, Vol. 4, No. 12, pp. 3660-3664, 2012.
147. C. J. Chiu, Z. W. Pei, S. P. Chang and S. J. Chang, "Influence of weight ratio of
poly(4-vinylphenol) insulator on electronic properties of InGaZnO thin-film transistor", J.
Nanomater., Art. no. 698123, 2012.
148. K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, S. L. Wu and M. Pilkuhn, “Comparison
studies of InGaN epitaxy with trimethylgallium and triethylgallium for photosensors
application”, Mater. Chem. Phys., Vol. 134, No. 2-3, pp. 899-904, June 2012.
149. Z. S. Hu, F. Y. Hung, S. J. Chang, W. K. Hsieh and K. J. Chen, "Align Ag nanorods via
oxidation reduction growth using RF-sputtering", J. Nanomater., Art. no. 345086, 2012.
150. H. Y. Chen, R. Y. Yang, S. J. Chang and Y. K. Yang, "Microstructure and photoluminescent
properties of Sr2SiO4:Eu3+ phosphors with various NH4Cl flux concentrations", Maters.
Research Bulletin, Vol. 47, No. 6, pp. 1412-1416, June 2012.
151. H. C. Hung, C. J. Wu, T. J. Yang and S. J. Chang, "Magnetooptical effects in wave properties
for a semiconductor photonic crystal at near-infrared", IEEE Photon. J., Vol. 4, No. 3, pp.
903-911, June 2012.
152. C. J. Chiu, S. P. Chang and S. J. Chang, "High-performance amorphous indium-gallium-zinc
oxide thin-film transistors with polymer gate dielectric", Thin Solid Films, Vol. 520, No. 16,
pp. 5455-5458, June 2012.
153. T. Y. Tsai, C. L. Hsu, S. J. Chang, S. I. Chen, H. T. Hsueh and T. J. Hsueh, "Enhanced field
electron emission from zinc-doped CuO nanowires", IEEE Electron. Dev. Lett., Vol. 33, No. 6,
pp. 887-889, June 2012.
154. C. J. Chiu, S. S. Shih, W. Y. Weng, S. J. Chang, Z. D. Huang and T. Y. Tsai, "Deep UV
Ta2O5/zinc-indium-tin-oxide thin film photo-transistor", IEEE Photon. Technol. Lett., Vol. 24,
No. 12, pp. 1018-1020, June 2012.
155. C. L. Tsai, C. T. Yen, Y. L. Chou, S. J. Chang and M. C. Wu, "1.3 μm InGaAsP planar buried
heterostructure laser diodes with AllnAs electron stopper layer", Optics and Laser Technol.,
Vol. 44, No. 4, pp. 1026-1030, June 2012.
156. H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, C. L. Hsu, B. T. Dai, K. T. Lam and K. H.
Wen, "A flexible ZnO nanowire-based humidity sensor", IEEE Tran. Nanotechnol., Vol. 11,
No. 3, pp. 520-525, May 2012.
157. T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao and C. S. Huang, "Field-emission and
photoelectrical characteristics of ZnO nanorods photodetectors prepared on flexible substrate",
J. Electrochem. Soc., Vol. 159, No. 5, pp. J153-J157, May 2012.
158. K. W. Liu, S. J. Young, S. J. Chang, T. H. Hsueh, Y. Z. Chen, K. J. Chen, H. Hung, S. M.
Wang and Y. L. Wu, "Growth of InN nanorods prepared by plasma-assisted molecular beam
epitaxy with varying Cr thicknesses", J. Crystal Growth, Vol. 347, No. 1, pp. 113-118, May
2012.
159. H. C. Hung, C. J. Wu, T. J. Yang, S. J. Chang, "Enhancement of near-infrared photonic band
gap in a doped semiconductor photonic crystal", Progress in Electronmagntics Res (PIERS).,
Vol. 125, pp. 219-235, 2012.
10
160. W. Y. Chen, M. H. Weng, S. J. Chang, H. Kuan and Y. H. Su, "A new tri-band bandpass filter
for GSM, WIMAX and ultra-wideband responses by using asymmetric stepped impedance
resonators", Prog. in Electromagn. Res. (PIER), Vol. 124, pp. 365-381, 2012.
161. T. H. Chiang, Y. Z. Chiou, S. J. Chang, C. K. Wang, T. K. Ko, T. K. Lin, C. J. Chiu and S. P.
Chang, "Effect of varied undoped GaN thickness on ESD and optical properties of GaN-based
LEDs", IEEE Photon. Technol. Lett., Vol. 24, No. 10, pp. 800-802, May 2012.
162. N. M. Lin, S. C. Shei, S. J. Chang and X. F. Zeng, "GaN-based LEDs with omnidirectional
metal underneath an insulating SiO2 layer", IEEE Photon. Technol. Lett., Vol. 24, No. 10, pp.
815-817, May 2012.
163. K. J. Chen, F. Y. Hung, T. S. Lui, S. J. Chang and Z. S. Hu, "The low-temperature
crystallization and interface characteristics of ZnInSnO/In films using a bias-crystallization
mechanism", J. Nanomater., Art. no. 272387, 2012.
164. T. Y. Tsai, S. J. Chang, W. Y. Weng, C. L. Hsu, S. H. Wang, C. J. Chiu, T. J. Hsueh and S. P.
Chang, "A visible-blind TiO2 nanowire photodetector", J. Electrochem. Soc., Vol. 159, No. 4,
pp. J132-J135, April 2012.
165. T. P. Chen, S. J. Young, S. J. Chang, S. M. Wang, C. H. Hsiao, B. R. Huang and C. B. Yang,
"Effect of nickel annealing on GaN-based photodetectors", Electrochem. Solid State Lett., Vol.
15, No. 4, pp. H111-H114, April 2012.
166. W. Y. Chen, M. H. Weng and S. J. Chang, "A new tri-band bandpass filter based on
stub-loaded step-impedance resonator", IEEE Microwave and Wireless Component Lett., Vol.
22, No. 4, pp. 179-181, April 2012.
167. Y. T. Chen, F. Y. Hung, S. J. Chang, T. S. Lui and L. H. Chen, "Microstructural characteristics
of InGaZnO thin film using an electrical current method", Mater. Trans., Vol. 53, No. 10, pp.
733-738, April 2012.
168. K. H. Lee, P. C. Chang, S. J. Chang and Y. C. Yin, “AlGaN/GaN MOS-HFETs based on
InGaN/GaN MQW structures with Ta2O5 dielectric”, European Phys. J. Appl. Phys., Vol. 57,
No. 3, Art. no. 30102, March 2012.
169. Y. T. Chen, F. Y. Hung, S. J. Chang, T. S. Lui and T. Y. Liao, "Characteristics of
thin-film-transistors based on Zn-In-Sn-O thin films prepared by co-sputtering system", Mater.
Tran., Vol. 53, No. 3, pp. 571-574, March 2012.
170. K. H. Lee, P. C. Chang, S. J. Chang and S. L. Wu, “GaN-based Schottky barrier ultraviolet
photodetector with a 5-pair AlGaN-GaN intermediate layer”, Phys. Status Solidi A, Vol. 209,
No. 3, pp. 579-584, March 2012.
171. R. Y. Yang, H. Y. Chen, S. J. Chang and Y. K. Yang, "Effect of Eu3+ concentration on
microstructure and photoluminescence of Sr2SiO4:Eu3+ phosphors prepared by microwave
assisted sintering", J. Luminescesnce, Vol. 132, No. 3, pp. 780-783, March 2012.
172. H. C. Hung, C. J. Wu and S. J. Chang, "Infrared tunable multichannel filter in a doped
semiconductor-dielectric photonic crystal heterostructure", IEEE J. Quan. Electron., Vol. 48,
No. 3, pp. 361-366, March 2012.
173. C. H. Yen, W. C. Lai, Y. Y. Yang, C. K. Wang, T. K. Ko, S. J. Hon and S. J. Chang,
"GaN-based light-emitting diode with sputtered AlN nucleation layer", IEEE Photon. Technol.
Lett., Vol. 24, No. 4, pp. 294-296, February 2012.
174. S. J. Chang, D. S. Kuo, K. T. Lam, K. H. Wen, T. K. Ko and S. J. Hon, "GaN-based LEDs
with sapphire debris removed by phosphoric etching", IEEE Tran. Components Packaging and
Manufacturing Technol., Vol. 2, No. 2, pp. 349-353, February 2012.
175. S. F. Yu, R. M. Lin, S. J. Chang and F. C. Chu, "Efficiency droop characteristics in
InGaN-based near ultraviolet-to-blue light-emitting diodes", Appl. Phys. Express, Vol. 5, No. 2,
Art. no. 022102, February 2012.
176. D. S. Kuo, K. T. Lam, K. H. Wen, S. J. Chang, T. K. Ko and S. J. Hon, "GaN-based LEDs
with Ar plasma treatment", Mater. Sci. Semicond. Processing, Vol. 15, No. 1, pp. 52-55,
11
February 2012.
177. H. C. Hung, C. J. Wu, T. J. Yang and S. J. Chang, "Tunable multichannel filter in a photonic
crystal containing semiconductor photonic quantum well", IEEE Photon. J., Vol. 4, No. 1, pp.
283-290, February 2012.
178. H. Y. Chen, M. H. Weng, S. J. Chang and R. Y. Yang, "Preparation of Sr2SiO4:Eu3+ phosphors
by microwave-assisted sintering and their luminescent properties", Ceramics International,
Vol. 38, No. 1, pp. 125-130, January 2012.
179. H. T. Hsueh, S. J. Chang, W. Y. Weng, C. L. Hsu, T. J. Hsueh, F. Y. Hung, S. L. Wu and B. T.
Dai, "Fabrication and characterization of coaxial p-copper oxide/n-ZnO nanowire
photodetectors", IEEE Tran. Nanotechnol., Vol. 11, No. 1, pp. 127-133, January 2012.
180. K. W. Liu, S. J. Young, S. J. Chang, T. H. Hsueh, H. Hung, S. X. Chen and Y. Z. Chen,
"Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium
nitride interlayer", J. Alloys and Compounds, Vol. 511, No. 1, pp. 1-4, January 2012.
181. H. T. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, S. P. Chang, T. J. Hsueh, C. L. Hsu and B.
T. Dai, "Isopropyl alcohol sensors of CuO nanotubes by thermal oxidation of copper films on
glass", IEEE Sensors Journal, Vol. 11, No. 12, pp. 3276-3282, December 2011.
182. X. F. Zeng, S. C. Shei and S. J. Chang, "GaN-based LEDs with nano-patterns by
contact-transferred and mask-embedded lithography and Cl2/N2 plasma etching", ECS
Solid-State Lett., Vol. 1, No. 6, pp. R27-R30, December 2012.
183. T. P. Chen, S. J. Young, S. J. Chang and C. H. Hsiao, "Photoconductive gain of vertical ZnO
nanorods on flexible polyimide substrate by low-temperature process", IEEE Sensors Journal,
Vol. 11, No. 12, pp. 3457-3461, December 2011.
184. H. C. Hung, C. J. Wu and S. J. Chang, "Terahertz temperature-dependent defect mode in a
semiconductor-dielectric photonic crystal", J. Appl. Phys., Vol. 110, No. 9, Art. no. 093110,
November 2011.
185. W. Y. Chen, S. J. Chang, M. H. Weng and C. Y. Hung, "Design of fractal-based CMOS
bandpass filter for Wireless HD system", Microelectron. Journal, Vol. 42, No. 11, pp.
1252-1256, November 2011.
186. K. J. Chen, F. Y. Hung, S. J. Chang, J. D. Liao, C. C. Wang and Z. S. Hu, "The influences of
plasma ion bombarded on crystallization, electrical and mechanical properties of Zn-In-Sn-O
films", Appl. Sur. Sci., Vol. 258, No. 3, pp. 1157-1163, November 2011.
187. H. C. Hung, C. J. Wu and S. J. Chang, "A mid-infrared tunable filter in a
semiconductor-dielectric photonic crystal containing doped semiconductor defect", Solid State
Communications, Vol. 151, No. 22, pp. 1677-1680, November 2011.
188. H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu and B. T. Dai, "Si
nanowire-based humidity sensors prepared on glass substrate", IEEE Sensors Journal, Vol. 11,
No. 11, pp. 3036-3041, November 2011.
189. C. J. Chiu, W. Y. Weng, S. J. Chang, S. P. Chang and T. H. Chang, "A deep UV sensitive
Ta2O5/a-IGZO TFT", IEEE Sensors Journal, Vol. 11, No. 11, pp. 2902-2905, November 2011.
190. Z. D. Huang, W. Y. Weng, S. J. Chang, S. C. Hung, C. J. Chiu, T. J. Hsueh, W. C. Lai and S. L.
Wu, "GaN Schottky barrier photodetectors with a lattice matched Al0.82In0.18N intermediate
layer", IEEE Sensors Journal, Vol. 11, No. 11, pp. 2895-2901, November 2011.
191. S. B. Wang, C. H. Hsiao, S. J. Chang, K. T. Lam, K. H. Wen, S. C. Hung, S. J. Young and B.
R. Huang, "A CuO nanowire infrared photodetector", Sensors and Actuators A, Vol. 171, No. 2,
pp. 207-211, November 2011
192. Z. S. Hu, F. Y. Hung, S. J. Chang, K. J. Chen, Y. W. Tseng, B. R. Huang, B. C. Lin, W. Y.
Chou and J. Chang, "Improvement of n-ZnO/p-Si photodiodes by embedding of silver
nanoparticles", J. Nanoparticle Research, Vol. 13, No. 10, pp. 4757-4763, October 2011.
193. C. W. Pao, C. T. Wu, H. M. Tsai, Y. S. Liu, C. L. Chang, W. F. Pong, J. W. Chiou, C. W.
Chen, M. S. Hu, M. W. Chu, L. C. Chen, C. H. Chen, K. H. Chen, S. B. Wang, S. J. Chang,
12
M. H. Tsai, H. J. Lin, J. F. Lee amd J. H. Guo, "Photoconduction and the electronic structure
of silica nanowires embedded with gold nanoparticles", Phys. Review B, Vol. 84, No. 16, Art.
no. 165412, October 2011.
194. T. Y. Tsai, S. J. Chang, T. J. Hsueh, H. T. Hsueh, W. Y. Weng, C. L. Hsu and B. T. Dai,
"p-Cu2O-shell/n-TiO2-nanowire-core heterostucture photodiodes", Nanoscale Research Lett.,
Vol. 6, Art. no. 575, October 2011.
195. Y. H. Su, Y. K. Wu, S. L. Tu and S. J. Chang, "Electrostatic studies of π-π interaction for
benzene stacking on a graphene layer", Appl. Phys. Lett., Vol. 99, No. 16, Art. no. 163102,
October 2011
196. K. H. Lee, P. C. Chang and S. J. Chang, “AlGaN/GaN metal-insulator-semiconductor
heterostructure field-effect transistor with an in-situ AlN cap layer”, Appl. Phys. Lett., Vol. 99,
No. 15, Art. no. 153505, October 2011.
197. K. H. Lee, P. C. Chang, S. J. Chang and S. L. Wu, “InGaN metal-semiconductor-metal
photodetectors with triethylgallium precursor and unactivated Mg-doped GaN cap layers”, J.
Appl. Phys., Vol. 110, No. 8, Art. no. 083113, October 2011.
198. C. J. Chiu, W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and H. T. Hsueh, "Ta2O5
solar-blind photodetectors", IEEE Sensors Journal, Vol. 11, No. 10, pp. 2372-2373, October
2011.
199. K. W. Liu, S. J. Chang, S. J. Young, T. H. Hsueh, H. Hung, Y. C. Mai, S. M. Wang and Y. Z.
Chen, "Improvement of (11-22) GaN on m-plane sapphire with CrN interlayer by using
molecular beam epitaxy", J. Electrochem. Soc., Vol. 158, No. 10, pp. H983-H987, October
2011.
200. C. J. Chiu, Z. W. Pei, S. T. Chang, S. P. Chang and S. J. Chang, "Effect of oxygen partial
pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film
transistors fabricated by thermal annealing", Vacuum, Vol. 86, No. 3, pp. 246-249, October
2011.
201. N. M. Lin, S. J. Chang, S. C. Shei, W. C. Lai, Y. Y. Yang, W. C. Lin and H. M. Lo,
"GaN-based LEDs with air voids prepared by one-step MOCVD growth", IEEE/OSA J.
Lightwave Technol., Vol. 29, No. 18, pp. 2831-2835, September 2011.
202. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and S. C. Hung, "Growth of Ga2O3
nanowires and the fabrication of solar-blind photodetector", IEEE Tran. Nanotechnol., Vol. 10,
No. 5, pp. 1047-1052, September 2011.
203. Y. T. Huang, S. L. Wu, S. J. Chang, C. W. Kuo, Y. T. Chen. Y. C. Cheng and O. Cheng,
"Origin of stress memorization mechanism in strained-Si nMOSFETs using a low-cost
stress-memorization technique", IEEE Tran. Nanotechnol., Vol. 10, No. 5, pp. 1053-1056,
September 2011.
204. H. T. Hsueh, T. J. Hsueh, S. J. Chang, T. Y. Tsai, F. Y. Hung, S. P. Chang, W. Y. Weng and B. T.
Dai, "CuO-nanowire field emitter prepared on glass substrate", IEEE Tran. Nanotechnol., Vol.
10, No. 5, pp. 1161-1165, September 2011.
205. W. H. Lin, C. J. Wu and S. J. Chang, "Effects of loss on the transmission and reflection in the
single-negative materials", Appl. Phys. A, Vol. 104, No. 3, pp. 807-809, September 2011.
206. K. J. Chen, F. Y. Hung, S. J. Chang, S. J. Young and Z. S. Hu, "Effects of crystallization on
the optical properties of ZnO nano-pillar thin films by sol-gel method", Current Appl. Phys.,
vol. 11, No. 5, pp. 1243-1248, September 2011
207. W. Y. Weng, T. J. Hsueh, S. J. Chang, S. C. Hung, G. J. Huang, H. T. Hsueh, Z. D. Huang and
C. J. Chiu, "An (AlxGa1-x)2O3 metal-semiconductor-metal VUV photodetector", IEEE Sensors
Journal, Vol. 11, No. 9, pp. 1795-1799, September 2011.
208. S. C. Shei, H. M. Lo, W. C. Lai, W. C. Lin and S. J. Chang, "GaN-based LEDs with air voids
prepared by laser scribing and chemical etching", IEEE Photon. Technol. Lett., Vol. 23, No. 16,
pp. 1172-1174, August 2011.
13
209. K. H. Lee, P. C. Chang, S. J. Chang and S. L. Wu, “InGaN metal-semiconductor-metal
photodetectors with aluminum nitride cap layers”, IEEE J. Quantum Electron., Vol. 47, No. 8,
pp. 1107-1112, August 2011.
210. Y. Z. Chiou, T. H. Chiang, D. S. Kuo, S. J. Chang, T. K. Ko and S. J. Hon, "The reliability
analysis of GaN-based light-emitting diodes with different current-blocking layers", Semicond.
Sci. Technol., Vol. 26, No. 8, Art. no. 085006, August 2011.
211. Z. S. Hu, F. Y. Hung, S. J. Chang, B. R. Huang, B. C. Lin, K. J. Chen, T. P. Chen and W. I.
Hsu, "Growth mechanism and field emission characteristics of GaO/GaN nanotips using
iodine-assisted enhanced focused ion beam etching", Curent Nanosci., Vol. 7, No. 4, pp.
594-597, August 2011.
212. H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, T. Y. Tsai, W. Y. Weng, C. L. Hsu and B. T.
Dai, "CuO nanowire-based humidity sensors prepared on glass substrate", Sensors and
Actuators B, Vol. 156, No. 2, pp. 906-911, August 2011.
213. K. J. Chen, F. Y. Hung, T. S. Lui, S. J. Chang and Z. S. Hu, "The bias-crystallization
mechanism on structural characteristics and electrical properties of Zn-In-Sn-O film", Mater.
Tran., Vol. 52, No. 8, pp. 1560-1564, August 2011.
214. T. H. Chiang, Y. Z. Chiou, S. J. Chang, T. K. Lin and S. P. Chang, "Effect of Si doped
quantum barriers on nitride-based light emitting diodes", J. Electrochem. Soc., Vol. 158, No. 8,
pp. H836-H839, August 2011
215. S. J. Chang, C. H. Hsiao, S. C. Hung, S. J. Young, Y. C. Cheng, B. R. Huang, S. B. Wang, S.
H. Chih and T. P. Chen, "Growth and characterization of ZnSe/CdSe multiquantum disks",
IEEE J. Sel. Top. Quan. Electron., Vol. 17, No. 4, pp. 779-784, July/August 2011.
216. S. P. Chang, C. Y. Lu, S. J. Chang, Y. Z. Chiou, T. J. Hsueh and C. L. Hsu, "Electrical and
optical properties of UV photodetector with interlaced ZnO nanowires", IEEE J. Sel. Top.
Quan. Electron., Vol. 17, No. 4, pp. 790-795, July/August 2011.
217. W. Y. Weng, T. J. Hsueh, S. J. Chang, S. B. Wang, H. T. Hsueh, and G. J. Huang, "A high
responsivity GaN nanowire UV photodetector", IEEE J. Sel. Top. Quan. Electron., Vol. 17, No.
4, pp. 996-1001, July/August 2011.
218. K. W. Liu, S. J. Chang, S. J. Young, T. H. Hsueh, H. Hung, Y. C. Mai, S. M. Wang, K. J. Chen,
Y. L. Wu and Y. Z. Chen, "InN nanorods prepared with CrN nanoislands by plasma-assisted
molecular beam epitaxy", Nanoscale Research Lett., Vol. 6, Art. no. 442, July 2011.
219. S. J. Chang, C. H. Hsiao, S. C. Hung, S. H. Chih, S. B. Wang, Y. C. Cheng, B. R. Huang, S. P.
Chang and S. J. Young, "ZnSe/ZnCdSeTe superlattice nanotips", IEEE Tran. Nanotechnol.,
Vol. 10, No. 4, pp. 682-687, July 2011.
220. P. C. Huang, S. L. Wu, S. J. Chang, C. W. Kuo, C. Y. Chang, Y. T. Huang, Y. C. Cheng and O.
Cheng, "Temperature dependence of electrical characteristics of strained nMOSFETs using
stress memorization technique", IEEE Electron. Dev. Lett., Vol. 32, No. 7, pp. 835-837, July
2011.
221. C. H. Jang, J. K. Sheu, S. J. Chang, M. L. Lee, C. C. Yang, S. J. Tu, F. W. Huang and C. J.
Hsu, "Effect of growth pressure of undoped GaN layer on the ESD characteristics of
GaN-based LEDs grown on patterned sapphire", IEEE Photon. Technol. Lett., Vol. 23, No. 14,
pp. 968-970, July 2011.
222. Z. D. Huang, W. Y. Weng, S. J. Chang, C. J. Chiu, T. J. Hsueh, W. C. Lai and S. L. Wu, "GaN
MSM UV photodetectors with an Al0.82In0.18N intermediate layer", J. Electrochem. Soc., Vol.
158, No. 7, pp. J221-J224, July 2011.
223. H. Y. Chen, M. H. Weng, R. Y. Yang and S. J. Chang, "The effects of sintering method on
crystalline morphology and photoluminescent properties of BaY2ZnO5:Tb3+", Ceramics
International, Vol. 37, No. 5, pp. 1521-1524, July 2011.
224. W. Y. Chen, Y. H. Su, H. Kuan and S. J. Chang, "Simple method to design a tri-band bandpass
filter using asymmetric SIRs for GSM, WiMax WLAN applications", Microwave Optical
14
Technol. Lett., Vol. 53, No. 7, pp. 1573-1576, July 2011.
225. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang, J. F. Chen, C. T. Lin, M. Ma and O. Cheng,
"Characteristics of Si/SiO2 interface properties for CMOS fabricated on hybrid orientation
substrate using amorphization/templated recrystallization (ATR) method", IEEE Tran.
Electron. Dev., Vol. 58, No. 6, pp. 1635-1642, June 2011.
226. H. M. Lo, S. C. Shei, X. F. Zeng, S. J. Chang and H. Y. Lin, "AlGaInP-based LEDs with
p+-GaP window layer and a thermally annealed ITO contact", IEEE J. Quan. Electron., Vol. 47,
No. 6, pp. 803-809, June 2011.
227. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and H. T. Hsueh, "A β-Ga2O3/GaN
hetero-structured solar-blind and visible-blind dual-band photodetector", IEEE Sensors
Journal, Vol. 11, No. 6, pp. 1491-1492, June 2011.
228. C. C. Huang, S. J. Chang, C. H. Kuo, C. H. Wu, C. H. Ko, C. H. Wann, Y. C. Cheng and W.
J. Lin, "Single crystalline GaN epitaxial layer prepared on nano-patterned Si(001) substrate", J.
Electrochem. Soc., Vol. 158, No. 6, pp. H626-H629, June 2011.
229. S. J. Chang, S. H. Chih, C. H. Hsiao, B. W. Lan, S. B. Wang, Y. C. Cheng, T. C. Li and S. P.
Chang, "Growth and photoelectric properties of twinned ZnSe1−xTex nanotips", IEEE Tran.
Nanotechnol., Vol. 10, No. 3, pp. 379-384, May 2011.
230. Y. T. Huang, S. L. Wu, S. J. Chang, C. K. Hung, T. J. Wang, C. W. Kuo, C. T. Huang and O.
Cheng, "Enhancement of CMOSFETs performance by utilizing SACVD-based shallow trench
isolation for the 40-nm node and beyond", IEEE Tran. Nanotechnol., Vol. 10, No. 3, pp.
433-438, May 2011.
231. H. M. Lo, S. C. Shei, X. F. Zeng, S. J. Chang and H. Y. Lin, "Postannealing effect on
ITO/p+-GaP with a diffused layer", J. Electrochem. Soc., Vol. 158, No. 5, pp. H506-H509,
May 2011.
232. H. T. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu, T. J. Hsueh, T. Y. Tsai and B. T.
Dai, "Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes", Superlattice Microst., Vol.
49, No. 5, pp. 572-580, May 2011.
233. N. M. Lin, S. C. Shei and S. J. Chang, "Nitride-based LEDs with high-reflectance and
wide-angle Ag mirror+SiO2/TiO2 DBR backside reflector", IEEE/OSA J. Lightwave Technol.,
Vol. 29, No. 7, pp. 1033-1038, April 2011.
234. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and H. T. Hsueh, "A β-Ga2O3 solar-blind
photodetector prepared by furnace annealing of GaN thin film", IEEE Sensors Journal, Vol. 11,
No. 4, pp. 999-1003, April 2011.
235. P. T. Hsieh, R. W. K. Chuang, C. Q. Chang, C. M. Wang and S. J. Chang, "Optical and
structural characteristics of yttrium doped ZnO films using sol-gel technology", J. Sol-Gel Sci.
Technol., Vol. 58, No. 4, pp. 42-47, April 2011.
236. H. T. Hsueh, S. J. Chang, F. Y. Hung, W. Y. Weng, C. L. Hsu, T. J. Hsueh, S. S. Lin and B. T.
Dai, "Ethanol gas sensor of crabwise CuO nanowires prepared on glass substrate", J.
Electrochem. Soc., Vol. 158, No. 4, pp. J106-J109, April 2011.
237. R. Y. Yang, H. Y. Chen, C. M. Hsuing and S. J. Chang, "Crystalline morphology and
photoluminescent properties of YInGe2O7:Eu3+ phosphors prepared from microwave and
conventional sintering", Ceramics International, Vol. 37, No. 3, pp. 749-752, April 2011
238. C. W. Kuo, S. L. Wu, H. Y. Lin, Y. T. Huang, S. J. Chang, D. G. Hong, C. Y. Wu, Y. C. Cheng
and O. Cheng, “Investigation of stress memorization process on low-frequency noise
performance for strained Si n-type metal-oxide-semiconductor field-effect transistors”, Jpn. J.
Appl. Phys., Vol. 50, No. 4, Art. no. 04DC20, April 2011
239. Y. T. Huang, S. L. Wu, H. Y. Lin, C. W. Kuo, S. J. Chang, D. G. Hong, C. Y. Wu, C. T. Huang
and O. Cheng, “Impact of reducing shallow trench isolation mechanical stress on active length
for 40 nm n-type metal-oxide-semiconductor field-effect transistors”, Jpn. J. Appl. Phys., Vol.
50, No. 4, Art. no. 04DC21, April 2011
15
240. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and H. T. Hsueh, "A β-Ga2O3/GaN
Schottky barrier photodetector", IEEE Photon. Technol. Lett., Vol. 23, No. 7, pp. 444-446,
April 2011.
241. H. Y. Lin, S. L. Wu, C. C. Cheng, C. H. Ko, C. H. Wann, Y. R. Lin, S. J. Chang and T. B.
Wu, "Influence of surface reconstruction on the atomic-layer-deposited HfO2/Al2O3/n-InAs
metal-oxide-semiconductor capacitors", Appl. Phys. Lett., Vol. 98, No. 12, Art. no. 123509,
March 2011.
242. S. C. Shei, S. J. Chang and P. Y. Lee, "Rinsing effects on successive ionic layer adsorption
and reaction method for deposition of ZnO thin films", J. Electrochem. Soc., Vol. 158, No. 3,
pp. H208-H213, March 2011.
243. T. H. Chiang, Y. Z. Chiou, S. J. Chang, C. K. Wang, T. K. Ko, T. K. Lin, C. J. Chiu and S. P.
Chang, "Improved optical and ESD characteristics for GaN-based LEDs with an n--GaN
layer", IEEE Tran. Dev. Mater. Reliability, Vol. 11, No. 1, pp. 76-80, March 2011.
244. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang, C. T. Lin, M. Ma and O. Cheng, "Effect of
annealing time on Si/SiO2 interface property for CMOS fabricated on hybrid orientation
substrate with ATR method", Mater. Chem. Phys., Vol. 126, No. 1-2, pp. 16-19, March 2011.
245. S. J. Young, C. H. Hsiao, S. J. Chang, L. W. Ji, T. H. Meen, T. P. Chen, K. W. Liu and K. J.
Chen, "High temperature characteristics of ZnO-based MOS-FETs with a photochemical
vapor deposition SiO2 gate dielectric", J. Phys. Chem. Solids, Vol. 72, No. 2, pp. 147-149,
February 2011.
246. W. Y. Weng, S. J. Chang, C. L. Hsu and T. J. Hsueh, "A ZnO-nanowire phototransistor
prepared on glass substrates", ACS Appl. Mater. Interfaces, Vol. 3, No. 2, pp. 162-166,
February 2011.
247. C. C. Huang, S. J. Chang, C. H. Kuo, C. H. Ko, C. H. Wann, Y. C. Cheng and W. J. Lin, "GaN
epitaxial layers prepared on nano-patterned Si(001) substrate", J. Nanosci. Nanotechnol., Vol.
11, No. 2, pp. 1248-1251, February 2011.
248. K. J. Chen, F. Y. Hung, S. J. Chang, S. P. Chang, Y. C. Mai and Z. S. Hu, "A study on
crystallization, optical and electrical properties of the advanced ZITO thin films using
co-sputtering system", J. Alloys and Compounds, Vol. 509, No. 8, pp. 3667-3671, February
2011
249. Z. S. Hu, F. Y. Hung, S. J. Chang, B. R. Huang, B. C. Lin, K. J. Chen and W. I. Hsu,
"Nanostructural characteristics of oxide-cap GaN nanotips by iodine-gallium ions etching", J.
Alloys and Compounds, Vol. 509, No. 5, pp. 2360-2363, February 2011.
250. S. J. Young, S. J. Chang, L. W. Ji, T. H. Meen, C. H. Hsiao, K. W. Liu, K. J. Chen and Z. S.
Hu, "Thermally stable Ir/n-ZnO Schottky diodes", Microelectron. Eng., Vol. 88, No. 1, pp.
113-116, January 2011.
251. Z. S. Hu, F. Y. Hung, S. J. Chang, K. J. Chen, W. L. Wang, S. J. Young and T. P. Chen,
"Effects of Ag nanoshape and AgGa phase in Ag-Si nanostructure using 2-step etching
process", J. Alloys and Compounds, Vol. 509, No. 3, pp. 758-763, January 2011.
252. S. P. Chang, C. Y. Lu, S. J. Chang, Y. Z. Chiou, C. L. Hsu, P. Y. Su and T. J. Hsueh, "A
novel fabrication of p-n diode based on ZnO nanowire/p-NiO heterojunction", Jpn. J. Appl.
Phys., Vol. 50, No. 1, Art. no. 01AJ05, January 2011.
253. W. H. Lin, C. J. Wu, T. J. Yang and S. J. Chang, "Terahertz multichanneled filter in a
superconducting photonic crystal", Optics Express, Vol. 18, No. 20, pp. 27155-27166,
December 2010.
254. H. M. Lo, Y. T. Hsieh, S. C. Shei, Y. C. Lee, X. F. Zeng, W. Y. Weng, N. M. Lin and S. J.
Chang, "AlGaInP LEDs prepared by contact-transferred and mask-embedded lithography",
IEEE J. Quan. Electron., Vol. 46, No. 12, pp. 1834-1839, December 2010.
255. S. J. Chang, W. Y. Weng, C. L. Hsu and T. J. Hsueh, "High sensitivity of ZnO
nanowires-based ammonia gas sensor with Pt nano-particles", Nano Communication Networks,
16
Vol. 1, No. 4, pp. 283-288, December 2010.
256. L. W. Ji, T. H. Fang, C. Z. Wu, T. T. Chu, H. L. Jiang, S. J. Chang, S. M. Peng, J. C. Zhong
and W. Y. Chang, "Structural and optoelectronic characteristics of well-aligned ZnO nanorod
arrays for photodiodes", J. Nanoelectron. Optoelectron., Vol. 5, No. 3, pp. 295-299, December
2010.
257. K. J. Chen, T. H. Fang, L. W. Ji, S. J. Chang and S. J. Young, "Fabrication and characteristics
of silicon micro-tip arrays", International J. Modern Phys. B, Vol. 24, No. 28, pp. 5601-5611,
November 2010.
258. C. J. Chiu, S. P. Chang and S. J. Chang, "High-performance a-IGZO thin-film transistor using
Ta2O5 gate dielectric", IEEE Electron. Dev. Lett., Vol. 31, No. 11, pp. 1245-1247, November
2010.
259. H. Y. Chen, R. Y. Yang and S. J. Chang, "Improving crystalline morphology and
photoluminescent properties of BaY2ZnO5:Eu3+ phosphors prepared using microwave assisted
sintering", Maters. Lett., Vol. 64, No. 22, pp. 2548-2550, November 2010.
260. W. H. Lin, C. J. Wu and S. J. Chang, "Analysis of angle-dependent unusual transmission in
lossy single-negative (SNG) materials", Solid State Communications, Vol. 150, No. 37-38, pp.
1729-1732, October 2010.
261. H. M. Lo, Y. T. Hsieh, S. C. Shei, Y. C. Lee, X. F. Zeng, W. Y. Weng, N. M. Lin and S. J.
Chang, "Enhanced output power for InGaAlP LEDs by contact-transferred and
mask-embedded lithography", Superlattice Microst., Vol. 48, No. 4, pp. 358-364, October
2010.
262. S. J. Chang, S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young, T. P. Chen, S. L. Wu and B. R.
Huang, "GaN Schottky barrier photodetectors", IEEE Sensors Journal, Vol. 10, No. 10, pp.
1609-1614, October 2010.
263. Y. S. Wang, S. J. Chang, C. L. Tsai, M. C. Wu, Y. Z. Chiou, S. P. Chang and W. Lin, "10-Gb/s
planar InGaAs P-I-N photodetectors", IEEE Sensors Journal, Vol. 10, No. 10, pp. 1559-1563,
October 2010.
264. W. H. Lin, C. J. Wu and S. J. Chang, "Angular dependence of wave reflection in a lossy
single-negative bilayer", Prog. in Electromagn. Res. (PIER), Vol. 107, pp. 253-267, 2010.
265. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang, C. W. Kuo, C. Y. Chang, Y. C. Cheng and O.
Cheng, "Evaluation of interface property and DC characteristics enhancement in nanoscale
n-channel metal-oxide-semiconductor field-effect transistor using stress memorization
technique", Jpn. J. Appl. Phys., Vol. 49, No. 9, Art. no. 090207, September 2010.
266. C. W. Kuo, S. L. Wu, S. J. Chang, Y. T. Huang, Y. C. Cheng and O. Cheng, "Impact of
stress-memorization technique induced-tensile strain on low frequency noise in n-channel
metal-oxide-semiconductor transistors", Appl. Phys. Lett., Vol. 97, No. 12, Art. no. 123501,
September 2010.
267. W. Y. Weng, S. J. Chang, C. L. Hsu, S. P. Chang and T. J. Hsueh, "Laterally grown n-ZnO
nanowire/p-GaN heterojunction light emitting diodes", J. Electrochem. Soc., Vol. 157, No. 9,
pp. H866-H868, September 2010.
268. C. H. Lan, J. D. Hwang, S. J. Chang, J. S. Liao, Y. C. Cheng, W. J. Lin and J. C. Lin,
"Investigations of ZnO nanowires and ZnO/p-GaN heterojunction diodes grown by different
aqueous solutions zinc nitrate and zinc acetate", Electrochem. Solid State Lett., Vol. 13, No. 11,
pp. H363-H365, August 2010.
269. P. C. Chang, Y. K. Su, K. J. Lee, C. L. Yu, S. J. Chang, C. H. Liu, "Improved performance of
GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2", J.
Alloys Compounds, Vol. 504, pp.S429-S431, August 2010.
270. C. C. Huang, S. J. Chang, R. W. Chuang, J. C. Lin, Y. C. Cheng and W. J. Lin, "GaN grown
on Si(111) with step-graded AlGaN intermediate layers", Appl. Sur. Sci., Vol. 256, No. 21, pp.
6367-6370, August 2010.
17
271. Z. S. Hu, F. Y. Hung, S. J. Chang, K. J. Chen and Y. Z. Chen, "Crystallization effect of
Al-Ag alloying layer in PL enhancement of ZnO thin film", Intermetallics, Vol. 18, No. 8, pp.
1428-1431, August 2010.
272. C. H. Chen, S. J. Chang, S. P. Chang, M. J. Li, T. J. Hsueh, A. D. Hsu and C. L. Hsu,
"Fabrication of a white-light-emitting diode by doping gallium into ZnO nanowire on a p-GaN
substrate", J. Phys. Chem. C, Vol. 114, No. 29, pp. 12422-12426, July 2010.
273. S. J. Chang, C. H. Hsiao, B. W. Lan, S. C. Hung, B. R. Huang, S. J. Young, Y. C. Cheng and S.
H. Chih, "Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe nanowire
photodetector", Superlattice Microst., Vol. 48, No. 1, pp. 50-57, July 2010.
274. K. T. Liu, S. J. Chang, S. Wu, and Y. Horikoshi, "Crystal polarity effects on magnesium
implantation into GaN layer", Jpn. J. Appl. Phys., Vol. 49, No. 7, Art. no. 071001, July 2010.
275. K. J. Chen, F. Y. Hung, Y. T. Chen, S. J. Chang and Z. S. Hu, "Surface characteristics, optical
and electrical properties on sol-gel synthesized Sn-doped ZnO thin film", Mater. Tran., Vol. 51,
No. 7, pp. 1340-1345, July 2010.
276. W. H. Lin, C. J. Wu, T. J. Yang and S. J. Chang, "Terahertz intrinsic and effective surface
impedances of high-temperature superconducting thin films", J. Electromagn. Waves and
Appl., Vol. 24, No. 17-18, pp. 2589-2603, 2010.
277. S. J. Chang, W. Y. Chen and M. H. Weng, "A miniaturized dual-mode bandpass filter with a
wide stopband realized on the ultra-thin flexible substrate", J. Electromagn. Waves and Appl.,
Vol. 24, No. 17-18, pp. 2363-2370, 2010.
278. C. H. Lan, J. D. Hwang, S. J. Chang, Y. C. Cheng, W. J. Lin, J. C. Lin, J. S. Liao and Y. L. Lin,
"(NH4)2Sx-treated AlGaN MIS photodetectors with LPD SiO2 layer", J. Electrochem. Soc., Vol.
157, No. 6, pp. H613-H616, June 2010.
279. K. J. Chen, F. Y. Hung, S. J. Chang, S. J. Young, Z. S. Hu and S. P. Chang, "An investigation
of the microstructure, optical and electrical properties of ZITO thin film using the sol-gel
method", J. Sol-Gel Sci. Technol., Vol. 54, No. 3, pp. 347-354, June 2010.
280. S. J. Chang, S. M. Wang, T. P. Chen, S. J. Young, Y. C. Lin, S. L. Wu and B. R. Huang, "GaN
Schottky barrier photodetectors prepared on patterned sapphire substrate", J. Electrochem.
Soc., Vol. 157, No. 6, pp. J212-J215, June 2010.
281. C. H. Hsiao, S. C. Hung, S. H. Chih, S. B. Wang, Y. C. Cheng, B. R. Huang, S. J. Young and
S. J. Chang, "ZnSe/ZnSeTe superlattice nanotips", Nanoscale Research Lett., Vol. 5, No. 6, pp.
930-934, June 2010.
282. S. F. Yu, S. J. Chang, R. M. Lin, Y. H. Lin, Y. C. Lu, S. P. Chang and Y. Z. Chiou, "Growth of
quaternary AlInGaN with various TMI molar rates", J. Crystal Growth, Vol. 312, No. 12-13,
pp. 1920-1924, June 2010.
283. S. P. Chang, S. J. Chang, C. Y. Lu, M. J. Li, C. L. Hsu, Y. Z. Chiou, T. J. Hsueh and I. C. Chen,
"A ZnO nanowire-based humidity sensor", Superlattice Microst., Vol. 49, No. 6, pp. 772-778,
June 2010.
284. B. W. Lan, C. H. Hsiao, S. C. Hung, S. J. Chang, S. J. Young, Y. C. Cheng, S. H. Chih and B.
R. Huang, " ZnCdSe nanowires grown by molecular beam epitaxy", J. Vac. Sci. Technol. B,
Vol. 28, No. 3, pp. 613-616, May/June 2010.
285. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang and S. P. Chang, "A solar-blind β-Ga2O3
nanowire photodetector", IEEE Photon. Technol. Lett., Vol. 22, No. 10, pp. 709-711, May
2010.
286. B. C. Wang, T. K. Kang, S. L. Wu and S. J. Chang, "Tensile CESL-induced strain dependence
on impact ionization efficiency in nMOSFETs", Microelectron. Reliability, Vol. 50, No. 5, pp.
610-613, May 2010.
287. S. J. Chang, S. M. Wang, P. C. Chang, C. H. Kuo, S. J. Young and T. P. Chen, "GaN MSM
photodetectors prepared on nanorod template", IEEE Photon. Technol. Lett., Vol. 22, No. 9, pp.
625-627, May 2010.
18
288. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, K. M. Lee and C. P. Lee, "Ultrathin DPN STI
SiON liner for 40 nm low-power CMOS technology", Solid State Electron., Vol. 54, No. 5, pp.
564-567, May 2010.
289. C. H. Hsiao, S. J. Chang, S. C. Hung, Y. C. Cheng, B. R. Huang, S. B. Wang, B. W. Lan and S.
H. Chih, "ZnSe/ZnCdSe heterostructure nanowires", J. Crystal Growth, Vol. 312, No. 10, pp.
1670-1675, May 2010.
290. K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su and C. L. Yu, "AlGaN/GaN high electron
mobility transistors based on InGaN/GaN multiquantum-well structures", Appl. Phys. Lett.,
Vol. 96, No. 21, Art. no. 212105, May 2010.
291. P. C. Huang, S. L. Wu, S. J. Chang, Y. T. Huang, C. T. Lin, M. Ma and O. Cheng, "Electrical
characteristics of nMOSFETs fabricated on hybrid orientation substrate with
amorphization/templated recrystallization method", Microelectron. Reliability, Vol. 50, No. 5,
pp. 662-665, May 2010.
292. Y. T. Huang, S. L. Wu, S. J. Chang, C. W. Kuo, Y. T. Chen, Y. C. Cheng and O. Cheng,
"Dependence of DC parameters on layout and low-frequency noise behavior in strained-Si
nMOSFETs fabricated by stress-memorization technique", IEEE Electron. Dev. Lett., Vol. 31,
No. 5, pp. 500-502, May 2010.
293. D. S. Kuo, S. J. Chang, C. F. Shen, T. C. Ko, T. K. Ko and S. J. Hon, "Nitride-based LEDs
with oblique sidewalls and a light guiding structure", Semicond. Sci. Technol., Vol. 25, No. 5,
Art. no. 055010, May 2010.
294. Y. X. Sun, W. S. Chen, S. C. Hung, K. T. Lam, C. H. Liu and S. J. Chang, "GaN-based power
flip-chip LEDs with an internal ESD protection diode on Cu sub-mount", IEEE Tran. Adv.
Packaging, Vol. 33, No. 2, pp. 433-437, May 2010.
295. C. H. Chen, S. J. Chang, S. P. Chang, Y. C. Tsai, I. C. Chen, T. J. Hsueh and C. L. Hsu,
"Enhanced field emission of well-aligned ZnO nanowire arrays illuminated by UV", Chem.
Phys. Lett., Vol. 490, No. 4-6, pp. 176-179, April 2010.
296. C. H. Chen, S. J. Chang, M. H. Wu, S. Y. Tsai and H. J. Chien, "AlGaN
metal-semiconductor-metal photodetectors with low-temperature AlN cap layer and recessed
electrodes", Jpn. J. Appl. Phys., Vol. 49, No. 4, Art. no. 04DG05, April 2010.
297. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, K. M. Lee and C. P. Lee, "Improvement of
poly-pimple-induced device mismatch on 6T-SRAM at 65-nm CMOS technology", IEEE Tran.
Electron. Dev., Vol. 57, No. 4, pp. 956-959, April 2010.
298. S. J. Chang, W. Y. Weng, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng and S. L. Wu, "GaN
Schottky barrier photodetectors with a semi-insulating AlInN cap layer", J. Electrochem. Soc.,
Vol. 157, No. 4, pp. J120-J124, April 2010.
299. P. C. Chang, K. H. Lee, S. J. Chang, Y. K. Su, T. C. Lin and S. L. Wu, "III-nitride Schottky
rectifiers with an AlGaN/GaN/AlGaN/GaN quadruple layer and their applications to UV
detection", IEEE Sensors Journal, Vol. 10, No. 4, pp. 799-804, April 2010.
300. C. H. Jang, J. K. Sheu, C. M. Tsai, S. J. Chang, W. C. Lai, M. L. Lee, T. K. Ko, C. F. Shen and
S. C. Shei, "Improved performance of GaN-based blue LEDs with the InGaN insertion layer
between the MQW active layer and the n-GaN cladding layer", IEEE J. Quan. Electron., Vol.
46, No. 4, pp. 513-517, April 2010.
301. H. T. Hsueh, T. J. Hsueh, S. J. Chang, F. Y. Hung, C. L. Hsu, W. Y. Weng, C. W. Liu, Y. H.
Lee and B. T. Dai, "Selective growth of silicon nanowires on glass substrate with an ultrathin
a-Si:H layer", Electrochem. Solid State Lett., Vol. 13, No. 4, pp. K29-K31, April 2010.
302. K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, Y. C. Wang, C. L. Yu and C. H. Kuo,
"Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN
nucleation layers", Thin Solid Films, Vol. 518, pp. 2839-2842, March 2010.
303. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, S. M. Wang, C. P. Lee and K. M. Lee,
"Shallow trench isolation stress modification by optimal shallow trench isolation process for
19
sub-65-nm low power complementary metal oxide semiconductor technology", J. Vacuum Sci.
Technol. B, Vol. 28, No. 2, pp. 391-397, March 2010.
304. C. H. Kuo, Y. K. Fu, G. C. Chi and S. J. Chang, "Efficiency dependence on degree of
localization states in GaN-based asymmetric two-step light-emitting diode with a low indium
content InGaN shallow step", IEEE J. Quan. Electron., Vol. 46, No. 3, pp. 391-395, March
2010.
305. K. J. Chen, F. Y. Hung, S. J. Chang and Z. S. Hu, "The crystallized mechanism and optical
properties of sol-gel synthesized ZnO nanowires", J. Electrochem. Soc., Vol. 157, No. 3, pp.
H241-H245, March 2010.
306. W. Y. Weng, S. J. Chang, C. L. Hsu, T. J. Hsueh and S. P. Chang, "A lateral ZnO nanowire
photodetector prepared on glass substrate", J. Electrochem. Soc., Vol. 157, No. 2, pp. K30-K33,
February 2010.
307. C. H. Hsiao, S. J. Chang, S. B. Wang, S. P. Chang, Y. C. Cheng, T. C. Li, W. J. Lin and B. R.
Huang, "Quaternary ZnCdSeTe nanowires", J. Nanosci. Nanotechnol., Vol. 10, No. 2, pp.
798-802, February 2010.
308. C. Y. Lu, S. P. Chang, S. J. Chang, C. L. Hsu, Y. Z. Chiou and I. C. Chen, "ZnO
nanowire-based UV photodetector", J. Nanosci. Nanotechnol., Vol. 10, No. 2, pp. 1135-1138,
February 2010.
309. W. Y. Chen, S. J. Chang, M. H. Weng and C. Y. Hung, "Design of the fractal-based dual-mode
bandpass filter on ultra thin liquid-crystal-polymer substrate", J. Electromagn. Waves and
Appl., Vol. 24, No. 1, pp. 391-399, January 2010.
310. C. Y. Hu, J. F. Chen, S. C. Chen, S. J. Chang, C. P. Lee and T. H. Lee, "Improved poly gate
engineering for 65 nm low power CMOS technology", J. Electrochem. Soc., Vol. 157, No. 1,
pp. H38-H43, January 2010.
311. S. J. Chang, C. H. Hsiao, S. C. Hung, S. H. Chih, B. W. Lan, S. B. Wang, S. P. Chang, Y. C.
Cheng, T. C. Li and B. R. Huang, "Growth of ZnSe1−xTex nanotips and the fabrication of
ZnSe1−xTex nanotip-based photodetector", J. Electrochem. Soc., Vol. 157, No. 1, pp. K1-K4,
January 2010.
312. K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, Y. C. Wang, C. H. Liu, "High-sensitivity
nitride-based ultraviolet photosensors with a low-temperature AlGaN interlayer", J. Electron.
Mater., Vol. 39, No.1, pp. 29-33, January, 2010.
313. C. L. Tsai, Y. L. Chou, Y. S. Wang, S. J. Chang, M. C. Wu and W. Lin, "1.3 μm
strain-compensated InGaAsP planar buried heterostructure laser diodes with a TO-can
package for optical fiber communications", J. Electrochem. Soc., Vol. 156, No. 12, pp.
H903-H907, December 2009.
314. S. J. Chang, C. H. Hsiao, S. B. Wang, Y. C. Cheng, T. C. Li, S. P. Chang, B. R. Huang and S.
C. Hung, "A quaternary ZnCdSeTe nanotip photodetector", Nanoscale Research Lett., Vol.
4, No. 12, pp. 1540-1546, December 2009.
315. C. H. Chen, S. J. Chang, S. P. Chang, M. J. Li, I. C. Chen, T. J. Hsueh and C. L. Hsu,
"Electroluminescence from n-ZnO nanowires/p-GaN heterostructure light-emitting diodes",
Appl. Phys. Lett., Vol. 95, No. 22, Art. no. 223101, November 2009.
316. R. M. Lin, Y. C. Lu, S. F. Yu, Y. C. S. Wu, C. H. Chiang, W. C. Hsu and S. J. Chang,
"Enhanced extraction and efficiency of blue light-emitting diodes prepared using
two-step-etched patterned sapphire substrates", J. Electrochem. Soc., Vol. 156, No. 11, pp.
H874-H876, November 2009.
317. S. C. Shei, W. C. Lai, J. K. Sheu, I. H. Hung and S. J. Chang, "The output power
enhancements of GaN-based blue light-emitting diodes with highly reflective Ag/Cr/Au
trilayer omnidirectional reflective electrode pads", Jpn. J. Appl. Phys., Vol. 48, No. 10, Art. no.
102103, October 2009.
20
318. P. C. Chang, K. H. Lee, S. J. Chang, Y. K. Su and C. H. Liu, "AlGaN/GaN two-dimensional
electron gas Schottky barrier photodiodes with multiple MgxNy/GaN layers", Semicond. Sci.
Technol., Vol. 24, No. 10, Art. no. 105005, October 2009.
319. C. H. Hsiao, S. J. Chang, S. B. Wang, S. C. Hung, S. P. Chang, T. C. Li, W. J. Lin and B. R.
Huang, "MBE growth of ZnSe nanowires on oxidized silicon substrate", Superlattice Microst.,
Vol. 46, No. 4, pp. 572-577, October 2009.
320. W. Y. Weng, R. W. Chuang, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng and S.
L. Wu, "GaN MSM photodetectors with a semi-insulating AlInN cap layer and sputtered ITO
transparent electrodes", Electrochem. Solid State Lett., Vol. 12, No. 10, pp. H369-H372,
October 2009.
321. W. Y. Weng, T. J. Hsueh, S. J. Chang, S. P. Chang and C. L. Hsu, "Laterally-grown
ZnO-nanowire photodetectors on glass substrate", Superlattice Microst., Vol. 46, No. 5, pp.
797-802, September 2009.
322. Z. S. Hu, F. Y. Hung, S. J. Chang, K. J. Chen, W. L. Wang, S. J. Young and T. P. Chen,
"Two-step etching mechanism of Ag-Si nanostructure with various Ag nanoshape depositions",
Maters. Trans., Vol. 50, No. 8, pp. 1992-1997, August 2009.
323. K. T. Liu, S. J. Chang and S. Wu, "Effects of phosphorus implantation on the activation of
magnesium doped in GaN", Jpn. J. Appl. Phys., Vol. 48, No. 8, Art. no. 081003, August 2009.
324. H. Y. Lin, S. L. Wu, S. J. Chang, C. W. Kuo. Y. P. Wang and S. C. Hung, "DC and 1/f noise
characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing technique",
Solid State Electron., Vol. 53, No. 8, pp. 905-908, August 2009.
325. C. W. Kuo, S. L. Wu, S. J. Chang, H. Y. Lin. Y. P. Wang and S. C. Hung, "Investigation of
interface characteristics in strained-Si nMOSFETs", Solid State Electron., Vol. 53, No. 8, pp.
897-900, August 2009.
326. C. M. Tsai, J. K. Sheu, W. C. Lai, M. L. Lee, S. J. Chang, C. S. Chang, T. K. Ko and C. F.
Shen, "GaN-based LEDs output power improved by textured GaN/sapphire interface using in
situ SiH4 treatment process during epitaxial growth", IEEE J. Sel. Top. Quan. Electron., Vol.
15, No. 4, pp. 1276-1280, July/August 2009.
327. S. J. Chang, W. S. Chen, S. C. Shei, C. F. Shen, T. K. Ko, J. M. Tsai, W. C. Lai, J. K. Sheu, A.
J. Lin and S. C. Hung, "GaN-based power flip-chip LEDs with Cu submount", IEEE J. Sel.
Top. Quan. Electron., Vol. 15, No. 4, pp. 1287-1291, July/August 2009.
328. K. H. Lee, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu and S. L. Wu, "AlGaN/GaN
Schottky barrier UV photodetectors with a GaN sandwich layer", IEEE Sensors Journal, Vol.
9, No. 7, pp. 814-819, July 2009.
329. C. H. Lan, J. D. Hwang, S. J. Chang, Y. C. Lin, Y. C. Cheng, W. J. Lin, J. C. Lin and K. J.
Chang, "Nitride-based metal-insulator-semiconductor capacitors with liquid-phase deposition
oxide and (NH4)2Sx pretreatment prepared on sapphire substrates", Semicond. Sci. Technol.,
Vol. 24, No. 7, Art. no. 075026, July 2009.
330. C. H. Chen, S. J. Chang, S. P. Chang, M. J. Li, I. C. Chen, T. J. Hsueh and C. L. Hsu, "Novel
fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction", Chem. Phys.
Lett., Vol. 476, No. 1-3, pp. 69-72, July 2009.
331. K. H. Lee, P. C. Chang, S. J. Chang, Y. K. Su, Y. C. Wang, C. L. Yu and S. L. Wu,
"Al0.25Ga0.75N/GaN Schottky barrier photodetectors with an Al0.3Ga0.7N intermediate layer", J.
Electrochem. Soc., Vol. 156, No. 7, pp. J199-J202, July 2009.
332. S. P. Chang, R. W. Chuang, S. J. Chang, C. Y. Lu, Y. Z. Chiou and S. F. Hsieh, "Surface HCl
treatment in ZnO photoconductive sensors", Thin Solid Films, Vol. 517, No. 17, pp.
5050-5053, July 2009.
333. S. P. Chang, R. W. Chuang, S. J. Chang, C. Y. Lu, Y. Z. Chiou and S. F. Hsieh, "MBE
n-ZnO/MOCVD p-GaN heterojunction light-emitting diode", Thin Solid Films, Vol. 517, No.
17, pp. 5054-5056, July 2009.
21
334. C. Y. Lu, S. P. Chang, S. J. Chang, T. J. Hsueh, C. L. Hsu, Y. Z. Chiou and I. C. Chen, "A
lateral ZnO nanowire UV photodetector prepared on a ZnO:Ga/glass template", Semicond. Sci.
Technol., Vol. 24, No. 7, Art. no. 075005, July 2009.
335. S. J. Chang, W. S. Chen, S. C. Shei, C. T. Kuo, T. K. Ko, C. F. Shen, J. M. Tsai, W. C. Lai, J.
K. Sheu and A. J. Lin, "High-brightness InGaN-GaN power flip-chip LEDs", IEEE/OSA J.
Lightwave Technol., Vol. 27, No. 12, pp. 1985-1989, June 2009.
336. W. Y. Weng, S. J. Chang, T. J. Hsueh, C. L. Hsu, M. J. Li and W. C. Lai, "AlInN resistive
ammonia gas sensors", Sensors and Actuators B, Vol. 140, No. 1, pp. 139-142, June 2009.
337. Y. S. Wang, S. J. Chang, C. L. Tsai, M. C. Wu, Y. Z. Chiou, Y. H. Huang and W. Lin,
"High-speed InGaAs P-I-N photodetector with planar buried heterostructure", IEEE Tran.
Electron. Dev., Vol. 56, No. 6, pp. 1347-1350, June 2009.
338. K. J. Chen, F. Y. Hung, S. J. Chang and S. J. Young, "Optoelectronic characteristics of UV
photodetector based on ZnO nanowire thin films", J. Alloys Compounds, Vol. 479, No. 1-2, pp.
674-677, June 2009.
339. K. H. Lee, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu and S. L. Wu, "Characterization of
AlGaN/GaN metal-semiconductor-metal photodetectors with a low-temperature AlGaN
interlayer", IEEE Sensors Journal, Vol. 9, No. 6, pp. 723-727, June 2009.
340. K. T. Lam, S. C. Hung, C. F. Shen, C. H. Liu, Y. X. Sun and S. J. Chang, "Effects of the
sapphire substrate thickness on the performances of GaN-based LEDs", Semicond. Sci.
Technol., Vol. 24, No. 6, Art. no. 065002, June 2009.
341. S. P. Chang, S. J. Chang, C. Y. Lu, Y. Z. Chiou, R. W. Chuang and H. C. Lin, "Low-frequency
noise characteristics of GaN-based UV photodetectors with AlN/GaN buffer layers prepared
on Si substrates", J. Crystal Growth, Vol. 311, No. 10, pp. 3003-3006, May 2009.
342. K. J. Chen, F. Y. Hung and S. J. Chang, "Structural characteristic, Raman analysis and optical
properties of indium-doped ZnO nanoparticles prepared by sol-gel method", J. Nanosci.
Nanotechnol., Vol. 9, No. 5, pp. 3325-3329, May 2009.
343. W. Y. Weng, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu and S. C.
Hung, "GaN MSM photodetectors with a semi-insulating Mg-doped AlInN cap layer", IEEE
Photon. Technol. Lett., Vol. 21, No. 8, pp. 504-506, April 2009.
344. D. S. Kuo, S. J. Chang, T. K. Ko, C. F. Shen, S. J. Hon and S. C. Hung, "Nitride-based LEDs
with phosphoric acid etched undercut sidewalls", IEEE Photon. Technol. Lett., Vol. 21, No. 8,
pp. 510-512, April 2009.
345. K. J. Chen, F. Y. Hung, S. J. Chang, and S. J. Young, "Optoelectronic characteristics of UV
photodetector based on ZnO nanopillar thin films prepared by sol-gel method", Mater. Tran.,
Vol. 50, No. 4, pp. 922-925, April 2009.
346. C. Y. Lu, S. P. Chang, S. J. Chang, T. J. Hsueh, C. L. Hsu, Y. Z Chiou and I. C. Chen, "ZnO
nanowire-based oxygen gas sensor", IEEE Sensors Journal, Vol. 9, No. 4, pp. 485-489, April
2009.
347. S. L. Wu, C. Y. Wu, H. Y. Lin, C. W. Kuo, S. H. Chen, C. H. Lin and S. J. Chang, "Impact of
Ge content on flicker noise behavior of strained-SiGe p-type metal-oxide-semiconductor
field-effect transistors", Jpn. J. Appl. Phys., Vol. 48, No. 4, Art. no. 04C036, April 2009.
348. P. C. Huang, T. K. Kang, B. C. Wang, S. L. Wu and S. J Chang, "Study of enhanced impact
ionization in strained-SiGe p-channel metal-oxide-semiconductor field-effect transistors", Jpn.
J. Appl. Phys., Vol. 48, No. 4, Art. no. 04C038, April 2009.
349. Y. S. Wang, S. J. Chang, S. T. Chou S. Y. Lin and W. Lin, "High-responsivity InGaAs/InP
quantum-well infrared photodetectors prepared by metal organic chemical vapor deposition",
Jpn. J. Appl. Phys., Vol. 48, No. 4, Art. no. 04C108, April 2009.
350. C. H. Hsiao, S. J. Chang, S. B. Wang, S. P. Chang, T. C. Li, W. J. Lin, C. H. Ko, T. M. Kuan
and B. R. Huang, "ZnSe nanowire photodetector prepared on oxidized silicon substrate by
molecular-beam epitaxy", J. Electrochem. Soc., Vol. 156, No. 4, pp. J73-J76, April 2009.
22
351. K. J. Chen, F. Y. Hung, S. J. Chang and Z. S. Hu, "Microstructures, optical and electrical
properties of In-doped ZnO thin films prepared by sol-gel method", Appl. Surface Sci., Vol.
255, No. 12, pp. 6308-6312, April 2009.
352. S. J. Young, L. W. Ji, S. J. Chang, T. H. Meen and K. J. Chen, "A ZnO-based MOSFET with
a photo-CVD gate oxide", Semicond. Sci. Technol., Vol. 24, No. 3, Art. no. 035010, March
2009.
353. C. H. Kuo, Y. K. Fu, C. L. Yeh, C. J. Tun, P. H. Chen, W. C. Lai and S. J. Chang,
"Nitride-based asymmetric two-step light-emitting diode with In0.08Ga0.92N shallow step",
IEEE Photon. Technol. Lett., Vol. 21, No. 6, pp. 371-373, March 2009.
354. S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, C. H. Kuo and S. L. Wu, "AlGaN/GaN
Schottky barrier photodetector with multi-MgxNy/GaN buffer", IEEE Sensors Journal, Vol.
9, No. 2, pp. 87-92, February 2009.
355. H. Y. Lin, S. L. Wu, S. J. Chang, Y. P. Wang, Y. M. Lin and C. W. Kuo, "Strained-Si
nMOSFET with a raised source/drain structure", Semicond. Sci. Technol., Vol. 24, No. 1, Art.
no. 015015, January 2009.
356. K. H. Lee, R. W. Chuang, P. C. Chang, S. J. Chang, Y. C. Wang, C. L. Yu, J. C. Lin and S. L.
Wu, "Nitride-based MSM photodetectors with a HEMT structure and a low-temperature
AlGaN intermediate layer", J. Electrochem. Soc., Vol. 155, No. 12, pp. H959-H963, December
2008.
357. S. J. Chang, T. J. Hsueh, I. C. Chen, S. F. Hsieh, S. P. Chang, C. L. Hsu, Y. R. Lin and B. R.
Huang, "Highly sensitive ZnO nanowire acetone vapor sensor with Au adsorption", IEEE Tran.
Nanotechnol., Vol. 7, No. 6, pp. 754-759, November 2008.
358. T. J. Wang, C. H. Ko, H. N. Lin, S. J. Chang, S. L. Wu, T. M. Kuan and W. C. Lee,
"Investigation of metallized source/drain extension for high-performance strained
NMOSFETs", IEEE Tran. Electron. Dev., Vol. 55, No. 11, pp. 3221-3226, November 2008.
359. S. J. Chang, Y. D. Jhou, Y. C. Lin, S. L. Wu, C. H. Chen, T. C. Wen and L. W. Wu,
"GaN-based MSM photodetectors prepared on patterned sapphire substrates", IEEE Photon.
Technol. Lett., Vol. 20, No. 22, pp. 1866-1868, November 2008.
360. J. J. Huang, Y. K. Su, F. S. Juang, Y. H. Liu and S. J. Chang, "Effect of the phase shift in a
periodic anode on the emission spectra of top-emitting organic light-emitting diodes", IEEE
Photon. Technol. Lett., Vol. 20, No. 21, pp. 1784-1786, November 2008.
361. Y. S. Wang, S. J. Chang, Y. Z. Chiou and W. Lin, "Noise characteristics of high performance
InGaAs PIN photodetectors prepared by MOCVD", J. Electrochem. Soc., Vol. 155, No. 11, pp.
J307-J309, November 2008.
362. S. J. Chang, K. H. Lee, P. C. Chang, Y. C. Wang, C. L. Yu, C. H. Kuo and S. L. Wu,
"GaN-based Schottky barrier photodetectors with a 12-pair MgxNy-GaN buffer layer", IEEE J.
Quan. Electron., Vol. 44, No. 10, pp. 916-921, October 2008.
363. Y. K. Su, S. J. Chang, Y. D. Jhou, S. L. Wu and C. H. Liu, "GaN metal-semiconductor-metal
photodetectors with SiN/GaN nucleation layer", IEEE Sensors Journal, Vol. 8, No. 10, pp.
1693-1697, October 2008.
364. K. H. Lee, P. C. Chang, S. J. Chang, C. L. Yu, Y. C. Wang and S. L. Wu, "Visible-blind
metal-semiconductor-metal photodetectors by capping an in situ low-temperature AlN layer",
J. Electrochem. Soc., Vol. 155, No. 10, pp. J287-J289, October 2008.
365. K. H. Lee, S. J. Chang, P. C. Chang, Y. C. Wang and C. H. Kuo, "AlGaN/GaN Schottky
barrier diodes with multi-MgxNy/GaN buffer", J. Electrochem. Soc., Vol. 155, No. 10, pp.
H716-H719, October 2008.
366. H. Y. Lin, S. L. Wu, S. J. Chang, Y. P. Wang and C. W. Kuo, "Low-frequency noise of strained
Si nMOSFETs fabricated on a chemical-mechanical-polished SiGe virtual substrate",
Semicond. Sci. Technol., Vol. 23, No. 10, Art. no. 105022, October 2008.
367. S. J. Chang, C. F. Shen, M. S. Hsieh, C. T. Kuo, T. K. Ko, W. S. Chen and S. C. Shei,
23
"Nitride-based LEDs with a hybrid Al mirror + TiO2/SiO2 DBR backside reflector", IEEE/OSA
J. Lightwave Technol., Vol. 26, No. 17, pp. 3131-3136, September 2008.
368. K. H. Lee, S. J. Chang, P. C. Chang, Y. C. Wang and C. H. Kuo, "High quality GaN-based
Schottky barrier diodes", Appl. Phys. Lett., Vol. 93, No. 13, Art. no. 132110, September 2008.
369. T. J. Hsueh, S. J. Chang, C. L. Hsu, Y. R. Lin and I. C. Chen, "ZnO nanotube ethanol gas
sensors", J. Electrochem. Soc., Vol. 155, No. 9, pp. K152-K155, September 2008.
370. S. J. Young, L. W. Ji, S. J. Chang, Y. P. Chen and S. M. Peng, "ZnO Schottky diodes with
iridium contact electrodes", Semicond. Sci. Technol., Vol. 23, No. 8, Art. no. 085016, August
2008.
371. C. W. Kuo, S. L. Wu, S. J. Chang, H. Y. Lin and Y. P. Wang, "Characteristics of strained-Si
nMOSFET using nickel silicide source/drain", J. Electrochem. Soc., Vol. 155, No. 8, pp.
H611-H614, August 2008.
372. C. C. Huang, R. W. Chuang, S. J. Chang, J. C. Lin, Y. C. Cheng and W. J. Lin, "MOCVD
growth of InN on Si(111) with various buffer layers", J. Electron. Mater., Vol. 37, No. 8, pp.
1054-1057, August 2008.
373. S. P. Chang, R. W. Chuang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, C. H. Kuo and H. M.
Chang, "Optical and electrical characteristics of ZnO films grown on nitridated Si(100)
substrate with GaN and ZnO double buffer layers", IEEE J. Sel. Top. Quan. Electron., Vol. 14,
No. 4, pp. 1058-1063, July/August 2008.
374. K. J. Chen, T. H. Fang, F. Y. Hung, L. W. Ji, S. J. Chang, S. J. Young and Y. J. Hsiao, "The
crystallization and physical properties of Al-doped ZnO nanoparticles", Appl. Surface Science,
Vol. 254, No. 18, pp. 5791-5795, July 2008.
375. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, W. R. Chen, K. C. Huang, Y. C. Cheng and W. J.
Lin, "Low dark current GaN p-i-n photodetectors with a low-temperature AlN interlayer",
IEEE Photon. Technol. Lett.,, Vol. 20, No. 14, pp. 1255-1257, July 2008.
376. C. H. Jang, J. K. Sheu, C. M. Tsai, S. C. Shei, W. C. Lai and S. J. Chang, "Effect of thickness
of the p-AlGaN electron blocking layer on the improvement of ESD characteristics in
GaN-Based LEDs", IEEE Photon. Technol. Lett.,, Vol. 20, No. 13, pp. 1142-1144, July 2008.
377. S. E. Wu, T. H. Hsueh, C. P. Liu, J. K. Sheu, W. C. Lai and S. J. Chang, "Non-lithographic
nanopatterning of InGaN/GaN multiple quantum well nanopillars by focused ion beams",
Phys. Status Solidi C, Vol. 5, No. 6, pp. 2186-2188, June 2008.
378. H. Hung, K. T. Lam, S. J. Chang, C. H. Chen, H. Kuan and Y. X. Sun, "InGaN/GaN
multiple-quantum-well LEDs with Si-doped barriers", J. Electrochem. Soc., Vol. 155, No. 6,
pp. H455-H458, June 2008.
379. K. H. Lee, P. C. Chang, S. J. Chang, C. L. Yu, Y. C. Wang and S. L. Wu, "GaN MSM
photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes", J.
Electrochem. Soc., Vol. 155, No. 6, pp. J165-J167, June 2008.
380. K. T. Lam, P. C. Chang, S. J. Chang, C. L. Yu, Y. C. Lin, Y. X. Sun and C. H. Chen,
"Nitride-based photodetectors with unactived Mg-doped cap layer", Sensors and Actuators A,
Vol. 143, No. 2, pp. 191-195, May 2008.
381. T. K. Kang, P. C. Huang, Y. H. Sa, S. L. Wu and S. J. Chang, "Investigation of impact
ionization in strained-Si n-channel metal-oxide-semiconductor field-effect transistors", Jpn. J.
Appl. Phys., Vol. 47, No. 4B, pp. 2664-2667, April 2008.
382. S. E. Wu, T. H. Hsueh, C. P. Liu, J. K. Sheu, W. C. Lai and S. J. Chang, "Focused ion beam
milled InGaN/GaN multiple quantum well nanopillars ", Jpn. J. Appl. Phys., Vol. 47, No. 4B,
pp. 3130-3133, April 2008.
383. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. C. Huang, W. J. Lin,
Y. C. Cheng and C. M. Chang, "GaN p-i-n photodetectors with an LT-GaN interlayer", IET
Optoelectron., Vol. 2, No. 2, pp. 59-62, April 2008.
384. S. J. Chang, T. J. Hsueh, I. C. Chen and B. R. Huang, "Highly sensitive ZnO nanowire CO
24
sensors with the adsorption of Au nanoparticles", Nanotechnol., Vol. 19, No. 9, Art. no.
175502, April 2008.
385. C. H. Liu, K. T. Lam, T. K. Ko, S. J. Chang and Y. X. Sun, "Highly ESD-reliable,
nitride-based heterostructure p-i-n photodetectors with a p-AlGaN blocking layer", J.
Electrochem. Soc., Vol. 155, No. 4, pp. H232-H234, April 2008.
386. S. J. Chang, T. J. Hsueh, C. L. Hsu, Y. R. Lin, I. C. Chen and B. R. Huang, "A ZnO nanowire
vacuum pressure sensor", Nanotechnol., Vol. 19, No. 9, Art. no. 095505, March 2008.
387. P. C. Chang, C. L. Yu, S. J. Chang and C. H. Liu, "GaN Schottky photodiodes with annealed
Ir/Pt semi-transparent contacts", Thin Solid Films, Vol. 516, No. 10, pp. 3324-3327, March
2008.
388. K. T. Lam, C. L. Yu, P. C. Chang, U. H. Liaw, S. J. Chang and J. C. Lin, "AlGaN/GaN
heterostructure grown on 1o-tilt sapphire substrate by MOCVD", Superlattice Microst., Vol.
43, No. 3, pp. 147-152, March 2008.
389. Y. D. Jhou, S. J. Chang, Y. K. Su, C. H. Chen, H. C. Lee, C. H. Liu and Y. Y. Lee, "Quaternary
AlInGaN-based photodetectors", IET Optoelectron., Vol. 2, No. 1, pp. 42-45, February 2008.
390. P. C. Chang, K. T. Lam, C. H. Chen, S. J. Chang, C. L. Yu and C. H. Liu, "AlGaN/GaN
two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered
SiO2 layers", IET Optoelectron., Vol. 2, No. 1, pp. 55-57, February 2008.
391. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, Y. C. Cheng and W. J. Lin,
"Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened
surface", IEEE Photon. Technol. Lett., Vol. 20, No. 4, pp. 285-287, February 2008.
392. T. J. Wang, C. H. Ko, S. J. Chang, S. L. Wu, T. M. Kuan and W. C. Lee, "The effects of
mechanical uniaxial stress on junction leakage in nanoscale CMOSFETs", IEEE Tran.
Electron. Dev., Vol. 55, No. 2, pp. 572-577, February 2008.
393. S. J. Chang, C. H. Lan, J. D. Hwang, Y. C. Cheng, W. J. Lin, J. C. Lin and H. Z. Chen,
"Sputtered indium-tin-oxide on p-GaN", J. Electrochem. Soc., Vol. 155, No. 2, pp. H140-H143,
February 2008.
394. S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, C. F. Kuo, H. M. Chang and U. H.
Liaw, "ZnO epitaxial layer grown on nitridated Si(100) substrate with HT-GaN/LT-ZnO
double buffer", J. Crystal Growth, Vol. 310, No. 2, pp. 290-294, February 2008.
395. L. W. Ji, S. J. Chang, T. H. Fang, S. J. Young and F. S. Juang, "MOVPE-grown ultrasmall
self-organized InGaN nanotips", IEEE Tran. Nanotechnol., Vol. 7, No. 1, pp. 1-4, January
2008.
396. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, W. R. Chen, Y. C. Cheng, W. J. Lin, Y. C. Tzeng,
H. Y. Shin and C. M. Chang, "InN grown on GaN/sapphire templates at different temperatures
by MOCVD", Optical Mater., Vol. 30, No. 4, pp. 517-520, December 2007.
397. T. J. Hsueh, Y. W. Chen, S. J. Chang, S. F. Wang, C. L. Hsu, Y. R. Lin, T. S. Lin and I. C.
Chen, "ZnO nanowire-based CO sensors prepared at various temperatures", J. Electrochem.
Soc., Vol. 154, No. 12, pp. J393-J396, December 2007.
398. T. J. Hsueh, C. L. Hsu, S. J. Chang, Y. R. Lin, S. P. Chang, Y. Z. Chiou, T. S. Lin and I. C.
Chen, "Crabwise ZnO nanowire UV photodetector prepared on ZnO:Ga/glass template", IEEE
Tran. Nanotechnol., Vol. 6, No. 6, pp. 595-600, November 2007.
399. S. J. Chang, W. S. Chen, S. C. Shei, T. K. Ko, C. F. Shen, Y. P. Hsu, C. S. Chang, J. M. Tsai,
W. C. Lai and A. J. Lin, "Highly reliable high-brightness GaN-based flip chip LEDs", IEEE
Tran. Adv. Packaging, Vol. 30, No. 4, pp. 752-757, November 2007.
400. P. C. Chang, C. L. Yu, S. J. Chang, K. H. Lee, C. H. Liu and S. L. Wu, "High-detectivity
nitride-based MSM photodetectors on InGaN-GaN multiquantum well with the unactivated
Mg-doped GaN layer", IEEE J. Quan. Electron., Vol. 43, No. 11, pp. 1060-1064, November
2007.
401. K. T. Lam, S. L. Wu, S. J. Chang, Y. P. Wang and U. H. Liaw, "Influence of process flow on
25
the characteristics of strained-Si nMOSFETs", Electrochem. Solid State Lett., Vol. 10, No. 11,
pp. H331-H333, November 2007.
402. R. W. Chuang, C. L. Yu, S. J. Chang, P. C. Chang, J. C. Lin and T. M. Kuan, "Crystal growth
and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0 0 0 1)
substrates", J. Crystal Growth, Vol. 308, No. 2, pp. 252-257, October 2007.
403. T. J. Hsueh, C. L. Hsu, S. J. Chang and I. C. Chen, "Laterally grown ZnO nanowire ethanol
gas sensors", Sensors and Actuators B, Vol. 126, No. 2, pp. 473-477, October 2007.
404. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, C. Y. Huang, W. C. Lai,
W. C. Lin and Y. C. Cheng, "High responsivity of GaN p-i-n photodiode by using
low-temperature interlayer", Appl. Phys. Lett., Vol. 91, No. 17, Art. no. 173502, October 2007.
405. R. W. Chuang, S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo
and H. M. Chang, "Gallium nitride metal-semiconductor-metal photodetectors prepared on
silicon substrates", J. Appl. Phys., Vol. 102, No. 7, Art. no. 073110, October 2007.
406. S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo and H. M.
Chang, "ZnO photoconductive sensors epitaxially grown on sapphire substrates", Sensors and
Actuators A, Vol. 140, No. 1, pp. 60-64, October 2007.
407. S. J. Chang, S. C. Wei, Y. K. Su and W. C. Lai, "Nitride-based dual-stage MQW LEDs", J.
Electrochem. Soc., Vol. 154, No. 10, pp. H871-H874, October 2007.
408. P. C. Chang, C. L. Yu, S. J. Chang, Y. C. Lin and S. L. Wu, "Low-noise and high-detectivity
GaN UV photodiodes with a low-temperature AlN cap layer", IEEE Sensors Journal, Vol. 7,
No. 9, pp. 1289-1292, September 2007.
409. K. T. Lam, C. L. Yu, P. C. Chang, U. H. Liaw, J. C. Lin and S. J. Chang, "Al0.22Ga0.78N/GaN
HFETs prepared on vicinal-cut sapphire substrates", J. Electrochem. Soc., Vol. 154, No. 9, pp.
H811-H813, September 2007.
410. J. D. Jhou, S. J. Chang, Y. K. Su, Y. Y. Lee, C. H. Liu and H. C. Lee, "GaN Schottky barrier
photodetectors with SiN/GaN nucleation layer", Appl. Phys. Lett., Vol. 91, No. 10, Art. no.
103506, September 2007.
411. S. J. Young, L. W. Ji, S. J. Chang, T. H. Fang and T. J. Hsueh, "Nanoindentation of vertical
ZnO nanowires", Physica E, Vol. 39, No. 2, pp. 240-243, September 2007.
412. P. C. Chang, C. L. Yu, S. J. Chang, Y. C. Lin and S. L. Wu, "Low-noise and high-detectivity
GaN-based UV photodiode with a semi-insulating Mg-doped GaN cap layer", IEEE Sensors
Journal, Vol. 7, No. 9, pp. 1270-1273, September 2007.
413. H. Hung, S. J. Chang, Y. C. Lin, H. Kuan and R. M. Lin, "AlGaN MSM photodetectors with
recess-etched LT-AlGaN cap layers", IET Optoelectron., Vol. 1, No. 4, pp. 147-149, August
2007.
414. S. H. Yang, C. Y. Lu and S. J. Chang, "Luminescence enhancement mechanism of ZnGa2O4
phosphor screen with an In2O3 buffer layer ", J. Electrochem. Soc., Vol. 154, No. 8, pp.
J229-J233, August 2007.
415. G. H. Yang, J. D. Hwang, C. H. Lan, C. M. Chan, H. Z. Chen and S. J. Chang,
"Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using
liquid-phase-deposition oxide", Jpn. J. Appl. Phys., Vol. 46, No. 8A, pp. 5119-5121, August
2007.
416. T. J. Hsueh, Y. W. Chen, S. J. Chang, S. F. Wang, C. L. Hsu, Y. R. Lin, T. S. Lin and I. C.
Chen, "ZnO nanowire-based CO sensors prepared on patterned ZnO:Ga/SiO2/Si templates",
Sensors and Actuators B, Vol. 125, No. 2, pp. 498-503, August 2007.
417. C. Y. Hu, S. C. Chen, J. F. Chen, S. J. Chang, M. H. Wang, V. Yeh and J. C. Chen, "Ultrathin
decoupled plasma nitridation SiON gate dielectrics prepared with various RF powers", J.
Vacuum Sci. Technol. B, Vol. 25, No. 4, pp. 1298-1304, July/August 2007.
418. S. H. Yang, T. J. Hsueh and S. J. Chang, "Effect of substrate properties on luminescence of
white ZnGa2O4 phosphor ", Jpn. J. Appl. Phys., Vol. 46, No. 7A, pp. 4166-4169, July 2007.
26
419. C. H. Lee, S. L. Wu, S. H. Chen, C. W. Kuo, Y. M. Lin, J. F. Chen and S. J. Chang, "Negative
bias temperature instability characteristics of strained SiGe pMOSFETs", Electron. Lett., Vol.
43, No. 15, pp. 835-836, July 2007.
420. T. J. Hsueh, C. L. Hsu, S. J. Chang, P. Y. Guo, J. H. Hsieh and I. C. Chen, "Cu2O/n-ZnO
nanowire solar cells on ZnO:Ga/glass templates", Scripta Materialia, Vol. 57, No. 1, pp. 53-56,
July 2007.
421. C. Y. Lu, S. P. Chang, S. J. Chang, Y. Z Chiou, C. F. Kuo, H. M. Chang C. L. Hsu and I. C.
Chen, "Noise characteristics of ZnO-nanowire photodetectors prepared on ZnO:Ga/glass
templates", IEEE Sensors Journal, Vol. 7, No. 7, pp. 1020-1024, July 2007.
422. S. P. Chang, S. J. Chang, Y. Z. Chiou, C. Y. Lu, T. K. Lin, Y. C. Lin, C. F. Kuo and H. M.
Chang, "Low-frequency noise characteristics of epitaxial ZnO photoconductive sensors", J.
Electrochem. Soc., Vol. 154, No. 7, pp. J209-J211, July 2007.
423. T. J. Hsueh, S. J. Chang, C. L. Hsu, Y. R. Lin and I. C. Chen, "Highly sensitive ZnO nanowire
ethanol sensor with Pd adsorption", Appl. Phys. Lett., Vol. 91, No. 5, Art. no. 053111, July
2007.
424. S. J. Chang, C. F. Shen, W. S. Chen, C. T. Kuo, T. K. Ko, S. C. Shei and J. K. Sheu,
"Nitride-based light emitting diodes with indium tin oxide electrode patterned by imprint
lithography", Appl. Phys. Lett., Vol. 91, No. 1, Art. no. 013504, July 2007.
425. C. H. Kuo, S. J. Chang and H. Kuan, "GaN-based indium-tin-oxide light emitting diodes with
nanostructured silicon upper contacts", IET Optoelectron., Vol. 1, No. 3, pp. 110-112, June
2007.
426. S. J. Young, L. W. Ji, S. J. Chang, Y. P. Chen, K. T. Lam, S. H. Liang, X. L. Du, Q. K. Xie and
Y. S. Sun, "ZnO metal-semiconductor-metal ultraviolet photodetectors with iridium contact
electrodes", IET Optoelectron., Vol. 1, No. 3, pp. 135-139, June 2007.
427. J. J. Horng, Y. K. Su, S. J. Chang, W. S. Chen and S. C. Shei, "GaN-based power LEDs with
CMOS ESD protection circuits", IEEE Tran. Dev. Mater. Reliability, Vol. 7, No. 2, pp.
340-346, June 2007.
428. C. H. Liu, S. J. Chang, K. T. Lam and Y. S. Sun, "SiGe doped-channel field-effect transistor",
Mater. Chem. Phys., Vol. 103, No. 2-3, pp. 222-224, June 2007.
429. C. L. Yu, P. C. Chang, S. J. Chang and S. L. Wu, "High-detectivity GaN MSM photodetectors
with low-temperature GaN cap layers and Ir/Pt contact electrodes", Electrochem. Solid State
Lett., Vol. 10, No. 6, pp. H171-H174, June 2007.
430. S. J. Chang, C. F. Shen, W. S. Chen, T. K. Ko, C. T. Kuo, K. H. Yu, S. C. Shei and Y. Z. Chiou,
"Nitride-based LEDs with an insulating SiO2 layer underneath p-pad electrodes", Electrochem.
Solid State Lett., Vol. 10, No. 6, pp. H175-H177, June 2007.
431. S. J. Chang, C. L. Yu, P. C. Chang and Y. C. Lin, "GaN ultraviolet photodetector with a
low-temperature AlN cap layer", Electrochem. Solid State Lett., Vol. 10, No. 6, pp.
H196-H198, June 2007.
432. S. J. Young, L. W. Ji, S. J. Chang, T. H. Fang, T. J. Hsueh, T. H. Meen and I. C. Chen,
"Nanoscale mechanical characteristics of vertical ZnO nanowires grown on ZnO:Ga/glass
templates", Nanotechnol., Vol. 18, No. 22, Art. no. 225603, June 2007.
433. C. L. Yu, R. W. Chuang, S. J. Chang, P. C. Chang, K. H. Lee and J. C. Lin, "InGaN-GaN
MQW metal-semiconductor-metal photodiodes with semi-insulating Mg-doped GaN cap
layers", IEEE Photon. Technol. Lett., Vol. 19, No. 11, pp. 846-848, June 2007.
434. J. J. Horng, Y. K. Su, S. J. Chang, T. K. Ko and S. C. Shei, "Nitride-based Schottky barrier
sensor module with high electrostatic discharge reliability", IEEE Photon. Technol. Lett., Vol.
19, No. 10, pp. 717-719, May 2007.
435. C. F. Shen, S. J. Chang, W. S. Chen, T. K. Ko, C. T. Kuo and S. C. Shei, "Nitride-based
high-power flip-chip LED with double-side patterned sapphire substrate", IEEE Photon.
Technol. Lett., Vol. 19, No. 10, pp. 780-782, May 2007.
27
436. C. H. Lin, S. L. Wu, C. Y. Wu, T. K. Kang, K. C. Huang and S. J. Chang, "Impact of SiN on
performance in novel complementary metal-oxide-semiconductor architecture using substrate
strained-SiGe and mechanical strained-Si technology", Jpn. J. Appl. Phys., Vol. 46, No. 5A, pp.
2882-2886, May 2007.
437. P. C. Chang, C. L. Yu, C. H. Liu, S. J. Chang, Y. K. Su, R. W. Chuang and Y. J. Chiou, "Ir/Pt
Schottky contact oxidation for nitride-based Schottky barrier diodes", Phys. Status Solidi C,
Vol. 4, No. 5, pp. 1625-1628, May 2007.
438. H. Hung, K. T. Lam, S. J. Chang, H. Kuan, C. H. Chen and U. H. Liaw, "Effects of thermal
annealing on In-induced metastable defects in InGaN films", Mater. Sci. Semicond. Processing,
Vol. 10, No. 2-3, pp. 112-116, April-June 2007.
439. S. J. Chang, H. Hung, Y. C. Lin, M. H. Wu, H. Kuan and R. M. Lin, "AlGaN ultraviolet
metal-semiconductor-metal photodetectors with low-temperature-grown cap layers", Jpn. J.
Appl. Phys., Vol. 46, No. 4B, pp. 2471-2473, April 2007.
440. S. J. Chang, T. K. Ko, J. K. Sheu, S. C. Shei, W. C. Lai, Y. Z. Chiou, Y. C. Lin, C. S. Chang,
W. S. Chen and C. F. Shen, "AlGaN ultraviolet metal-semiconductor-metal photodetectors
grown on Si substrates", Sensors and Actuators A, Vol. 135, No. 2, pp. 502-506, April 2007.
441. S. J. Young, L. W. Ji, S. J. Chang, S. H. Liang, K. T. Lam, T. H. Fang, K. J. Chen, X. L. Du
and Q. K. Xue, "ZnO-based MIS photodetectors", Sensors and Actuators A, Vol. 135, No. 2,
pp. 529-533, April 2007.
442. C. L. Yu, P. C. Chang, S. J. Chang and S. L. Wu, "High-detectivity GaN MSM photodetectors
with low-temperature GaN cap layers and Ir/Pt contact electrodes", Electrochem. Solid State
Lett., Vol. 10, No. 6, pp. H171-H174, March 2007.
443. Y. P. Hsu, S. J. Chang, W. S. Chen, J. K. Sheu, J. Y. Chu and C. T. Kuo, "Crack-free
high-brightness InGaN/GaN LEDs on Si(111) with initial AlGaN buffer and two LT-Al
interlayers", J. Electrochem. Soc., Vol. 154, No. 3, pp. H191-H193, March 2007.
444. T. J. Hsueh, C. L. Hsu, S. J. Chang, Y. R. Lin, T. S. Lin and I. C. Chen, "Growth and
characterization of sparsely dispersed ZnO nanowires", J. Electrochem. Soc., Vol. 154, No. 3,
pp. H153-H156, March 2007.
445. T. J. Hsueh, C. L. Hsu, S. J. Chang, C. Y. Lu, Y. R. Lin and I. C. Chen, "Crabwise ZnO
nanowires: growth and field emission properties", J. Nanosci. Nanotechnol., Vol. 7, No. 3, pp.
1076-1079, March 2007.
446. J. C. Lin, Y. K. Su, S. J. Chang, W. H. Lan, K. C. Huang, W. R. Chen, Y. C. Cheng and W. J.
Lin, "GaN-based light-emitting diodes prepared on vicinal sapphire substrates", IET
Optoelectron., Vol. 1, No. 1, pp. 23-26, February 2007.
447. C. F. Shen, S. J. Chang, T. K. Ko, S. C. Shei, W. C. Lai, C. S. Chang, W. S. Chen, S. P. Huang,
Y. W. Ku and R. H. Horng, "Nitride-based high power flip-chip near-UV LEDs with reflective
submount", IET Optoelectron., Vol. 1, No. 1, pp. 27-30, February 2007.
448. S. J. Chang, T. K. Lin, Y. Z. Chiou, B. R. Huang, S. P. Chang, C. M. Chang, Y. C. Lin and C.
C. Wong, "ZnSe based white light emitting diode on homoepitaxial ZnSe substrate", IET
Optoelectron., Vol. 1, No. 1, pp. 39-41, February 2007.
449. T. J. Wang, H. W. Chen, P. C. Yeh, C. H. Ko, S. J. Chang, J. Yeh, S. L. Wu, C. Y. Lee, W. C.
Lee and D. D. Tang, "Effects of mechanical uniaxial stress on SiGe HBT characteristics", J.
Electrochem. Soc., Vol. 154, No. 2, pp. H105-H108, February 2007.
450. C. H. Liu, K. T. Lam, S. J. Chang, C. K. Wang and Y. S. Sun, "Flicker noise of AlGaN/GaN
metal-oxide-semiconductor heterostructure field-effect transistor with a photo-CVD SiO2
Layer", J. Electrochem. Soc., Vol. 154, No. 2, pp. H119-H123, February 2007.
451. C. L. Yu, C. H. Chen, S. J. Chang and P. C. Chang, "GaN metal-semiconductor-metal
ultraviolet photodetectors with Ir/Pt contact electrodes", J. Electrochem. Soc., Vol. 154, No. 2,
pp. J71-J72, February 2007.
452. T. K. Lin, K. T. Lam, S. J. Chang, Y. Z. Chiou and S. P. Chang, "Ni/Au contacts on
28
homoepitaxial p-ZnSe with surface oxygen plasma treatments", J. Vac. Sci. Technol. B, Vol. 25,
No. 1, pp. 213-216, January/February 2007.
453. H. Hung, C. H. Chen, S. J. Chang, H. Kuan, R. M. Lin and C. H. Liu, "Kinetics of persistent
photoconductivity in InGaN epitaxial films grown by MOCVD", J. Crystal Growth, Vol. 298,
No. 1, pp. 246-250, January 2007.
454. M. L. Tu, Y. K. Su, S. J. Chang and R. W. Chuang, "GaN UV photodetector by using
transparency antimony-doped tin oxide electrode", J. Crystal Growth, Vol. 298, No. 1, pp.
744-747, January 2007.
455. Y. P. Wang, S. L. Wu and S. J. Chang, "Tradeoff between short channel effect and mobility in
strained-Si nMOSFETs", Semicond. Sci. Technol., Vol. 22, No. 1, pp. S50-S54, January 2007.
456. C. H. Lin, Y. K. Su, Y. Z. Juang, C. F. Chiou, S. J. Chang, J. F. Chen and C. H. Tu, "The
optimized geometry of the SiGe HBT power cell for 802.11a WLAN applications", IEEE
Microwave Wireless Components Lett., Vol. 17, No. 1, pp. 49-51, January 2007.
457. W. C. Lai, K. T. Lam, C. H. Liu and S. J. Chang, "InGaN/GaN MQW structures prepared with
various In and Ga flow rates", International J. Electron., Vol. 94, No. 1, pp. 1-7, January 2007.
458. Y. P. Wang, S. L. Wu and S. J. Chang, "Low-frequency noise characteristics in strained-Si
nMOSFETs", IEEE Electron. Dev. Lett., Vol. 28, No. 1, pp. 36-38, January 2007.
459. S. J. Young, L. W. Ji, T. H. Fang, S. J. Chang and X. L. Du, "ZnO ultraviolet photodiodes with
Pd contact electrodes", Acta Materialia, Vol. 55, No. 1, pp. 329-333, January 2007.
460. S. J. Young, L. W. Ji, S. J. Chang and X. L. Du, "ZnO metal-semiconductor- metal ultraviolet
photodiodes with Au contacts", J. Electrochem. Soc., Vol. 154, No. 1, pp. H26-H29, January
2007.
461. L. T. Chen, C. S. Hwang, I. G. Chen and S. J. Chang, "Chromaticity of inhomogeneous
broadening effect on CaxSr1-xAl2O4:Eu2+ phosphors", J. Alloys and Compounds, Vol. 426, No.
1-2, pp. 395-399, December 2006.
462. C. F. Shen, S. J. Chang, T. K. Ko, C. T. Kuo, S. C. Shei, W. S. Chen, C. T. Lee, C. S. Chang
and Y. Z. Chiou, "Nitride-based light emitting diodes with textured sidewalls and pillar
waveguides", IEEE Photon. Technol. Lett., Vol. 18, No. 23, pp. 2517-2519, December 2006.
463. S. C. Hung, Y. K. Su, S. J. Chang and Y. H. Chen, "Vertically aligned GaN nanotubes Fabrication and current image analysis", Microelectron. Eng., Vol. 83, No. 11-12, pp.
2441-2445, November-December 2006.
464. C. L. Yu, S. J. Chang, P. C. Chang, Y. C. Lin and C. T. Lee, "Nitride-based ultraviolet
Schottky barrier photodetectors with LT-AlN cap layers", Superlattice Microst., Vol. 40, No.
4-6, pp. 470-475, October-December 2006.
465. C. Y. Lu, S. J. Chang, S. P. Chang, C. T. Lee, C. F. Kuo, H. M. Chang Y. Z. Chiou, C. L. Hsu
and I. C. Chen, "Ultraviolet photodetectors with ZnO nanowires prepared on ZnO:Ga/glass
templates", Appl. Phys. Lett., Vol. 89, No. 15, Art. no. 153101, October 2006.
466. S. J. Chang, C. L. Yu, R. W. Chuang, P. C. Chang, Y. C. Lin, Y. W. Jhan and C. H. Chen,
"Nitride-based MIS-like photodiodes with semiinsulating Mg-doped GaN cap layers", IEEE
Sensors Journal, Vol. 6, No. 5, pp. 1043-1044, October 2006.
467. S. J. Young, L. W. Ji, R. W. Chuang, S. J. Chang and X. L. Du, "Characterization of ZnO
metal-semiconductor-metal ultraviolet photodiodes with palladium contact electrodes",
Semicond. Sci. Technol., Vol. 21, No. 10, pp. 1507-1511, October 2006.
468. S. J. Chang, C. L. Yu, P. C. Chang, Y. C. Lin and C. H. Chen, "Nitride-based MIS-like diodes
with semi-insulating Mg-doped GaN cap layers", Semicond. Sci. Technol., Vol. 21, No. 10, pp.
1422-1424, October 2006.
469. S. C. Hung, Y. K. Su, T. H. Fang and S. J. Chang, "Shell buckling behavior investigation of
individual gallium nitride hollow nanocolumn", Appl. Phys. A, Vol. 84, No. 4, pp. 439-443,
September 2006.
470. S. J. Chang, C. F. Shen, S. C. Shei, R. W. Chuang, C. S. Chang, W. S. Chen, T. K. Ko and J. K.
29
Sheu, "Highly reliable nitride-based LEDs with internal ESD protection diodes", IEEE Tran.
Dev. Mater. Reliability, Vol. 6, No. 3, pp. 442-447, September 2006.
471. T. K. Ko, S. C. Shei, S. J. Chang, Y. Z. Chiou, R. M. Lin, W. S. Chen, C. F. Shen, C. S. Chang
and K. W. Lin, "InGaN p-i-n ultraviolet - A band-pass photodetectors", IEE Proc. Optoelectron., Vol. 153, No. 4, pp. 212-214, August 2006.
472. T. K. Ko, S. J. Chang, J. K. Sheu, S. C. Shei, Y. Z. Chiou, M. L. Lee, C. F. Shen, S. P. Chang
and K. W. Lin, "AlGaN/GaN Schottky-barrier UV-B bandpass photodetectors with ITO
contacts and LT-GaN cap layers", Semicond. Sci. Technol., Vol. 21, No. 8, pp. 1064-1068,
August 2006.
473. T. K. Ko, S. J. Chang, Y. K. Su, Y. Z. Chiou, S. C. Shei, J. K. Sheu, W. C. Lai, Y. C. Lin, W. S.
Chen and C. F. Shen, "Nitride-based flip-chip p-i-n photodiodes", IEEE Tran. Adv. Packaging,
Vol. 29, No. 3, pp. 483-487, August 2006.
474. S. J. Chang, W. S. Chen, Y. C. Lin, C. S. Chang, T. K. Ko, Y. P. Hsu, C. F. Shen, J. M. Tsai
and S. C. Shei, "Nitride-based flip-chip LEDs with transparent ohmic contacts and reflective
mirrors", IEEE Tran. Adv. Packaging, Vol. 29, No. 3, pp. 403-408, August 2006.
475. T. K. Ko, S. C. Shei, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, C. S. Chang, W. S. Chen, C.
K. Wang, J. K. Sheu and W. C. Lai, "Flip-chip p(GaN)-i(GaN)-n(AlGaN) narrowband UV-A
photosensors", IEEE Sensors Journal, Vol. 6, No. 4, pp. 964-969, August 2006.
476. S. J. Chang, T. K. Lin, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M. Chang, J. J.
Tang and B. R. Huang, "ITO/homoepitaxial ZnSe/ITO MSM sensors with thermal annealing",
IEEE Sensors Journal, Vol. 6, No. 4, pp. 945-949, August 2006.
477. S. J. Chang, H. S. Hou and Y. K. Su, "Automated synthesis of passive filter circuits including
parasitic effects by genetic programming", Microelectron. Journal, Vol. 37, No. 8, pp. 792-799,
August 2006.
478. S. J. Young, L. W. Ji, S. J. Chang and Y. K. Su, "ZnO metal-semiconductor-metal ultraviolet
sensors with various contact electrodes", J. Crystal Growth, Vol. 293, No. 1, pp. 43-47, July
2006.
479. T. K. Lin, S. J. Chang, B. R. Huang, K. T. Lam, Y. S. Sun, M. Fujita and Y. Horikoshi,
"Transparent RuOx contacts on n-ZnO", J. Electrochem. Soc., Vol. 153, No. 7, pp. G677-G680,
July 2006.
480. C. H. Kuo, S. J. Chang, G. C. Chi, K. T. Lam and Y. S. Sun, "Nitride-based light emitting
diodes with quaternary p-AlInGaN surface layers", Phys. Status Solidi C, Vol. 3, No. 6, pp.
2153-2155, June 2006.
481. C. M. Tsai, J. K. Sheu, P. T. Wang, S. C. Shei, S. J. Chang, C. H. Kuo, C. W. Kuo and Y. K.
Su, "High efficiency and improved ESD characteristics of GaN-based LEDs with naturally
textured surface grown by MOCVD", IEEE Photon. Technol. Lett., Vol. 18, No. 11, pp.
1213-1215, June 2006.
482. T. J. Hsueh, S. J. Chang, Y. R. Lin, S. Y. Tsai, I. C. Chen and C. L. Hsu, "A novel method for
the formation of ladder-like ZnO nanowires", Crystal Growth & Design, Vol. 6, No. 6, pp.
1282-1284, June 2006.
483. L. T. Chen, I. L. Sun, C. S. Hwang and S. J. Chang, "Luminescence properties of BAM
phosphor synthesized by TEA coprecipitation method", J. Luminescence, Vol. 118, No. 2, pp.
293-300, June 2006.
484. S. L. Wu, C. H. Lee, S. J. Chang and Y. M. Lin, "Inductively coupled plasma etching of
Si1–xGex in CF4/Ar and Cl2/Ar discharges", J. Vac. Sci. Technol. A, Vol. 24, No. 3, pp. 728-731,
May/June 2006.
485. Y. K. Su, S. H. Hsu, R. W. Chuang, S. J. Chang and W. C. Chen, "GaInNAs
metal-semiconductor-metal near-infrared photodetectors", IEE Proc. - Optoelectron., Vol. 153,
No. 3, pp. 128-130, June 2006.
486. S. J. Chang, C. L. Yu, C. H. Chen, P. C. Chang, and K. C. Huang, "Nitride-based ultraviolet
30
metal-semiconductor-metal photodetectors with low-temperature GaN cap layers and Ir/Pt
contact electrodes", J. Vac. Sci. Technol. A, Vol. 24, No. 3, pp. 637-640, May/June 2006.
487. T. K. Lin, S. J. Chang, Y. Z. Chiou, C. K. Wang, S. P. Chang, K. T. Lam, Y. S. Sun and B. R.
Huang, "Homoepitaxial ZnSe MIS photodetectors with SiO2 and BST insulator layers", Solid
State Electron., Vol. 50, No. 5, pp. 750-753, May 2006.
488. K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang and Y. Horikoshi, "Electrical and surface
composition properties of phosphorus implantation in Mg-doped GaN", Microelectron.
Journal, Vol. 37, No. 5, pp. 417-420, May 2006.
489. Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, "Hole confinement and 1/f noise
characteristics of SiGe double-quantum-well p-type metal-oxide-semiconductor field-effect
transistors ", Jpn. J. Appl. Phys., Vol. 45, No. 5A, pp. 4006-4008, May 2006.
490. C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A Ku band four-stage PHEMT
1W MMIC power amplifier", Microelectron. Journal, Vol. 37, No. 5, pp. 428-432, May 2006.
491. Y. K. Su, W. C. Chen, S. H. Hsu, J. D. Wu, S. J. Chang, R. W. Chuang and W. R. Chen,
"Improvement in linearity of novel InGaAsN-based high electron mobility transistors", Jpn. J.
Appl. Phys., Vol. 45, No. 4B, pp. 3372-3375, April 2006.
492. Y. Z. Chiou, Y. K. Su, J. Gong, S. J. Chang and C. K. Wang, "Noise analysis of nitride-based
metal oxide-semiconductor heterostructure field effect transistors with photo-chemical vapor
deposition SiO2 gate oxide in the linear and saturation regions", Jpn. J. Appl. Phys., Vol. 45,
No. 4B, pp. 3405-3409, April 2006.
493. S. H. Hsu, W. R. Chen, Y. K. Su, R. W. Chuang, S. J. Chang and W. C. Chen, "Effects of
nitrogen incorporation on the electronic properties of GaxIn1-xNyAs1-y epilayers probed by
persistent photoconductivity", J. Crystal Growth, Vol. 290, No. 1, pp. 87-90, April 2006.
494. S. J. Chang, T. K. Ko, Y. K. Su, Y. Z. Chiou, C. S. Chang, S. C. Shei, J. K. Sheu, W. C. Lai, Y.
C. Lin, W. S. Chen and C. F. Shen, "GaN-based p-i-n sensors with ITO contacts", IEEE
Sensors Journal, Vol. 6, No. 2, pp. 406-411, April 2006.
495. C. L. Hsu, Y. R. Lin, S. J. Chang, T. H. Lu, T. S. Lin, S. Y. Tsai and I. C. Chen, "Influence of
the formation of the second phase in ZnO/Ga nanowire systems", J. Electrochem. Soc., Vol.
153, No. 4, pp. G333-G336, April 2005.
496. Y. D. Jhou, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chang, P. C. Chen, H. Hung, C. L. Yu, S.
M. Wang and M. H. Wu, "High UV/visible rejection contrast AlGaN/GaN MIS
photodetectors", Microelectron. Journal, Vol. 37, No. 4, pp. 328-331, April 2006.
497. P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, C. L. Yu, B. R. Huang and P. C. Chen, "High
UV/visible rejection contrast AlGaN/GaN MIS photodetectors", Thin Solid Films, Vol. 498,
No. 1-2, pp. 133-136, March 2006.
498. P. C. Chen, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chang and B. R. Huang, "High hole
concentration of p-type InGaN epitaxial layers grown by MOCVD", Thin Solid Films, Vol.
498, No. 1-2, pp. 113-117, March 2006.
499. Y. K. Su, S. H. Hsu, C. C. Sio, W. C. Chen and S. J. Chang, "DC and 1/f noise characteristics
of InGaP/InGaAsN/GaAs double heterojunction bipolar transistors", Semicond. Sci. Technol.,
Vol. 21, No. 2, pp. 167-170, February 2006.
500. J. D. Hwang, G. H. Yang, C. C. Lin and S. J. Chang, "Nonalloyed Ti/indium tin oxide and Ti
ohmic contacts to n-type GaN using plasma pre-treatment", Solid State Electron., Vol. 50, No.
2, pp. 297-299, February 2006.
501. K. S. Ramaiah, Y. K. Su, S. J. Chang and C. H. Chen, "A comparative study of blue, green
and yellow light emitting diode structures grown by metal organic chemical vapor deposition",
Solid State Electron., Vol. 50, No. 2, pp. 119-124, February 2006.
502. S. H. Hsu, Y. K. Su, S. J. Chang, W. C. Chen and H. L. Tsai, "InGaAsN
metal-semiconductor-metal photodetectors with modulation-doped heterostructures", IEEE
Photon. Technol. Lett., Vol. 18, No. 3, pp. 547-579, February 2006.
31
503. S. J. Chang, H. S. Hou and Y. K. Su, "Automated passive filter synthesis using a novel tree
representation and genetic programming", IEEE Tran. Evolutionary Computation, Vol. 10, No.
1, pp. 93-100, February 2006.
504. Y. K. Su, H. S. Hou and S. J. Chang, "Practical impedance matching using genetic
programming", Microwave Optical Technol. Lett., Vol. 48, No. 2, pp. 375-377, February 2006.
505. C. H. Liu, T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, J. J. Tang
and B. R. Huang, "Photo-assisted thermally oxidized GaAs insulator layers deposited by
photo-CVD", Surface & Coatings Technol., Vol. 200, No. 10, pp. 3250-3253, February 2006.
506. M. C. Wei, S. J. Chang, C. Y. Tsai, C. H. Liu and S. C. Chen, "SiNx deposited by in-line
PECVD for multi-crystalline silicon solar cells", Solar Energy, Vol. 80, No. 2, pp. 215-219,
February 2006.
507. S. J. Chang, T. K. Lin, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M. Chang, J. J.
Tang and B. R. Huang, "Homoepitaxial ZnSe MSM photodetectors with various transparent
electrodes", Mater. Sci. Eng. B, Vol. 127, No. 2-3, pp. 164-168, February 2006.
508. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin, C. C. Wong, H. L. Liu, S. P. Chang
and J. J. Tang, "Room temperature photo-CVD SiO2 layers on AlGaN and AlGaN/GaN
MOS-HFTEs", Phys. Status Solidi A, Vol. 203, No. 2, pp. 404-409, February 2006.
509. C. L. Hsu, S. J. Chang, Y. R. Lin, J. M. Wu, T. S. Lin, S. Y. Tsai and I. C. Chen,
"Indium-diffused ZnO nanowires synthesized on ITO-buffered Si substrate", Nanotechnol.,
Vol. 17, No. 2, pp. 516-519, January 2006.
510. S. H. Yang, T. J. Hsueh and S. J. Chang, "Effect of ZnO buffer layer on the
cathodoluminescence of ZnGa2O4/ZnO phosphor screen for FED", J. Crystal Growth, Vol. 287,
No. 1, pp. 194-198, January 2006.
511. S. L. Wu, Y. P. Wang and S. J. Chang, "Controlled misfit dislocation technology in strained
silicon MOSFETs", Semicond. Sci. Technol., Vol. 21, No. 1, pp. 44-47, January 2006.
512. W. S. Chen, S. C. Shei, S. J. Chang, Y. K. Su, W. C. Lai, C. H. Kuo, Y. C. Lin, C. S. Chang, T.
K. Ko, Y. P. Hsu and C. F. Shen, "Rapid thermal annealed InGaN/GaN flip-chip LEDs", IEEE
Tran. Electron. Dev., Vol. 53, No. 1, pp. 32-37, January 2006.
513. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, S. C. Chen, C. S. Chang, T. K. Lin, H. L. Liu
and J. J. Tang, "GaN MSM UV photodetectors with titanium tungsten transparent electrodes",
IEEE Tran. Electron. Dev., Vol. 53, No. 1, pp. 38-42, January 2006.
514. S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen and C. W. Liu, "Enhanced CMOS
performances using substrate strained-SiGe and mechanical strained-Si technology ", IEEE
Electron. Dev. Lett., Vol. 27, No. 1, pp. 46-48, January 2006.
515. H. C. Yu, J. S. Wang, Y. K. Su, S. J. Chang, F. I. Lai, Y. H. Chang, H. C. Kuo, C. P. Sung, H. P.
D. Yang, K. F. Lin, J. M. Wang, J. Y. Chi, R. S. Hsiao and S. Mikhrin, "1.3-m InAs-InGaAs
quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE",
IEEE Photon. Technol. Lett., Vol. 18, No. 2, pp. 418-420, January 2006.
516. S. C. Hung, Y. K. Su, S. J. Chang, L. W. Ji, D. S. Shen and C. H. Huang, "InGaN/GaN MQD
p-n junction photodiodes", Physica E, Vol. 30, No. 1-2, pp. 13-16, December 2005.
517. H. S. Hou, S. J. Chang and Y. K. Su, "Tolerance design of passive filter circuits using genetic
programming", IEICE Tran. Electron., Vol. E88C, No. 12, pp. 2388-2390, December 2005.
518. C. H. Kuo, S. J. Chang and S. C. Chen, "Nitride-based LEDs with ITO on nanostructured
silicon contact layers", J. Crystal Growth, Vol. 258, No. 3, pp. 295-299, December 2005.
519. J. C. Lin, Y. K. Su, S. J. Chang, W. R. Chen, R. Y. Chen, Y. C. Cheng and W. J. Lin,
"Activation energy of n-GaN epitaxial layers grown on vicinal-cut sapphire substrates", J.
Crystal Growth, Vol. 258, No. 4, pp. 481-485, December 2005.
520. Y. K. Su, S. J. Chang, S. C. Wei, R. W. Chuang, S. M. Chen and W. L. Li, "Nitride-based
LEDs with n--GaN current spreading Layers", IEEE Electron. Dev. Lett., Vol. 26, No. 12, pp.
891-893, December 2005.
32
521. C. L. Hsu, S. J. Chang, H. C. Hung, Y. R. Lin, C. J. Huang, Y. K. Tseng and I. C. Chen,
"Vertical single-crystal ZnO nanowires grown on ZnO:Ga/glass templates", IEEE Tran.
Nanotechnol., Vol. 4, No. 6, pp. 649-654, December 2005.
522. Y. P. Wang, S. L. Wu and S. J. Chang, "Investigation of transport mechanism for strained Si n
metal-oxide-semiconductor field-effect transistor grown on multi-layer substrate", Jpn. J. Appl.
Phys. Lett., Vol. 44, No. 51, pp. L1560-L1562, December 2005.
523. C. L. Hsu, S. J. Chang, H. C. Hung, Y. R. Lin, T. H. Lu, Y. K. Tseng and I. C. Chen,
"Selective growth of vertical ZnO nanowires on ZnO:Ga/Si3N4/SiO2/Si templates", J. Vac. Sci.
Technol. B, Vol. 23, No. 6, pp. 2292-2296, November-December 2005.
524. L. W. Ji, T. H. Fang, S. C. Hung, Y. K. Su, S. J. Chang and R. W. Chuang, "Ultra small
self-organized nitride nanotips", J. Vaccum Sci. Technol. B, Vol. 23, No. 6, pp. 2496-2498,
November-December 2005.
525. C. L. Hsu, S. J. Chang, Y. R. Lin, P. C. Li, T. S. Lin, S. Y. Tsai, T. H. Lu and I. C. Chen,
"Ultraviolet photodetectors with low temperature synthesized vertical ZnO nanowires", Chem.
Phys. Lett., Vol. 416, No. 1-3, pp. 75-78, November 2005.
526. S. H. Yang, T. J. Hsueh and S. J. Chang, "Cathodoluminescence of a white ZnGa2O4/ZnO
phosphor screen", J. Electrochem. Soc., Vol. 152, No. 11, pp. H191-H195, November 2005.
527. K. T. Liu, Y. K. Su, S. J. Chang and Y. Horikoshi, "Magnesium/nitrogen and
beryllium/nitrogen co-implantation into GaN", J. Appl. Phys., Vol. 98, No. 7, Art. no. 073702,
October 2005.
528. C. K. Wang, T. K. Ko, C. S. Chang, S. J. Chang, Y. K. Su, T. C. Wen, C. H. Kuo and Y. Z.
Chiou, "The thickness effect of p-AlGaN blocking layer in UV-A bandpass photodetectors",
IEEE Photon. Technol. Lett., Vol. 17, No. 10, pp. 2161-2163, October 2005.
529. S. C. Hung, Y. K. Su, T. H. Fang, S. J. Chang and L. W. Ji, "Buckling instabilities in GaN
nanotubes under uniaxial compression", Nanotechnol., Vol. 16, No. 10, pp. 2203-2208,
October 2005.
530. C. H. Kuo, C. C. Lin, S. J. Chang, Y. P. Hsu, J. M. Tsai, W. C. Lai and P. T. Wang,
"Nitride-based light-emitting diodes with p-AlInGaN surface layers", IEEE Tran. Electron.
Dev., Vol. 52, No. 10, pp. 2346-2349, October 2005.
531. J. L. Yang, J. S. Chen and S. J. Chang, "Presence of nanosize Au dots on the formation of
ohmic contact for the Ni-Au base film to p-GaN", J. Vac. Sci. Technol. B, Vol. 23, No. 5, pp.
2127-2131, September-October 2005.
532. Y. P. Wang, S. L. Wu and S. J. Chang, "Optimized Si-cap layer thickness for
tensile-strained-Si/compressively strained SiGe dual-channel transistors in 0.13 m
complementary metal oxide semiconductor technology", Jpn. J. Appl. Phys. Lett., Vol. 44, No.
37-41, pp. L1248-L1251, September 2005.
533. Y. T. Nien, Y. L. Chen, I. G. Chen, C. S. Hwang, Y. K. Su, S. J. Chang and F. S. Juang,
"Synthesis of nano-scaled yttrium aluminum garnet phosphor by co-precipitation method with
HMDS treatment", Mater. Chem. Phys., Vol. 93, No. 1, pp. 79-83, September 2005.
534. T. K. Ko, S. J. Chang, Y. K. Su, M. L. Lee, C. S. Chang, Y. C. Lin, S. C. Shei, J. K. Sheu, W.
S. Chen and C. F. Shen, "AlGaN-GaN Schottky-barrier photodetectors with LT GaN cap
layers", J. Crystal Growth, Vol. 283, No. 1-2, pp. 68-71, September 2005.
535. S. J. Chang, S. C. Wei, Y. K. Su, R. W. Chuang, S. M. Chen and Li, "Nitride-based LEDs with
MQW active regions grown by different temperature profiles", IEEE Photon. Technol. Lett.,
Vol. 17, No. 9, pp. 1806-1808, September 2005.
536. Y. P. Hsu, S. J. Chang, Y. K. Su, S. C. Chen, J. M. Tsai, W. C. Lai, C. H. Kuo and C. S. Chang,
"InGaN-GaN MQW LEDs with Si treatment", IEEE Photon. Technol. Lett., Vol. 17, No. 8, pp.
1620-1622, August 2005.
537. T. K. Lin, S. J. Chang, Y. K. Su, B. R. Huang, M. Fujita and Y. Horikoshi, "ZnO MSM
photodetectors with Ru contact electrodes", J. Crystal Growth, Vol. 281, No. 2-4, pp. 513-517,
33
August 2005.
538. C. I. Lee, Y. T. Lu, Y. K. Su, S. J. Chang, J. S. Hwang and C. C. Chang, "Optical transitions in
a self-assembled Ge quantum dot/Si-superlattice measured by photoreflectance spectroscopy",
Jpn. J. Appl. Phys., Vol. 44, No. 33-36, pp. L1045-L-1047, August 2005.
539. Y. D. Jhou, C. H. Chen, R. W. Chuang, S. J. Chang, Y. K. Su, P. C. Chang, P. C. Chen, H.
Hung, S. M. Wang and C. L. Yu, "Nitride-based light emitting diode and photodetector dual
function devices with InGaN/GaN multiple quantum well structures", Solid State Electron.,
Vol. 49, No. 8, pp. 1347-1351, August 2005.
540. K. T. Liu, Y. K. Su, R. W. Chuang, S. J. Chang and Y. Horikoshi, "C and N co-implantation in
Be-doped GaN", Semicond. Sci. Technol., Vol. 20, No. 8, pp. 740-744, August 2005.
541. C. L. Hsu, Y. R. Lin, S. J. Chang, T. S. Lin, S. Y. Tsai and I. C. Chen, "Vertical ZnO/ZnGa2O4
core-shell nanorods grown on ZnO/glass templates by reactive evaporation", Chem. Phys. Lett.,
Vol. 411, No. 1-3, pp. 221-224, August 2005.
542. C. H. Liu, T. K. Lin and S. J. Chang, "GaAs MOS capacitors with photo-CVD SiO2 insulator
layers", Solid State Electron., Vol. 49, No. 7, pp. 1077-1080, July 2005.
543. C. L. Hsu, S. J. Chang, Y. R. Lin, S. Y. Tsai and I. C. Chen, "Vertically well aligned P-doped
ZnO nanowires synthesized on ZnO-Ga/glass templates", Chem. Commun., Issue 28, pp.
3571-3573, July 2005.
544. S. J. Chang, H. C. Yu, Y. K. Su, I. L. Chen, T. D. Lee, C. M. Lu, C. H. Chiou, Z. H. Lee, H. P.
Yang and C. P. Sung, "Highly strained InGaAs oxide confined VCSELs emitting in 1.25 µm",
Mater. Sci. Eng. B, Vol. 121, No. 1-2, pp. 60-63, July 2005.
545. S. C. Hung, Y. K. Su, S. J. Chang, S. C. Chen, T. H. Fang and L. W. Ji, "GaN nanocolumns
formed by inductively coupled plasmas etching", Physica E, Vol. 28, No. 2, pp. 115-120, July
2005.
546. C. M. Tsai, J. K. Sheu, W. C. Lai, Y. P. Hsu, P. T. Wang, C. T. Kuo, C. W. Kuo, S. J. Chang
and Y. K. Su, "Enhanced output power in GaN-based LEDs with naturally textured surface
grown by MOCVD", IEEE. Electron. Dev. Lett., Vol. 26, No. 7, pp. 464-466, July 2005.
547. Y. K. Su, S. J. Chang, S. C. Wei, S. M. Chen and W. L. Li, "ESD engineering of nitride-based
LEDs", IEEE Tran. Dev. Mater. Reliability, Vol. 5, No. 2, pp. 277-281, June 2005.
548. S. J. Chang, C. K. Wang, Y. K. Su, C. S. Chang, T. K. Lin, T. K. Ko and H. L. Liu, "GaN MIS
capacitors with photo-CVD SiNxOy insulating layers", J. Electrochem. Soc., Vol. 152, No. 6,
pp. G423-G426, June 2005.
549. H. S. Hou, S. J. Chang and Y. K. Su, "Practical passive filter synthesis using genetic
programming", IEICE Tran. Electron., Vol. E88C, No. 6, pp. 1180-1185, June 2005.
550. S. C. Wei, Y. K. Su, S. J. Chang, S. M. Chen and W. L. Li, "Nitride-based MQW LEDs with
multiple GaN-SiN nucleation layers", IEEE Tran. Electron. Dev., Vol. 52, No. 6, pp.
1104-1109, June 2005.
551. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, T. K. Lin, H. L. Liu and J.
J. Tang, "High detectivity GaN metal-semiconductor-metal UV photodetectors with
transparent tungsten electrodes", Semicond. Sci. Technol., Vol. 20, No. 6, pp. 485-489, June
2005.
552. C. K. Wang, R. W. Chuang, S. J. Chang, Y. K. Su, S. C. Wei, T. K. Lin, T. K. Ko, Y. Z. Chiou
and J. J. Tang, "High temperature and high frequency characteristics of AlGaN/GaN
MOS-HFETs with photochemical vapor deposition SiO2 layer", Mater. Sci. Eng. B, Vol. 119,
No. 2, pp. 25-28, May 2005.
553. S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei
and H. M. Lo, "Nitride-based flip-chip ITO LEDs", IEEE Tran. Adv. Packaging, Vol. 28, No. 2,
pp. 273-277, May 2005.
554. C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "Ka band 1W PHEMT MMIC
power amplifiers on 2mil-thick GaAs substrates", Microwave Optical Technol. Lett. , Vol. 45,
34
No. 3, pp. 181-185, May 2005.
555. S. C. Hung, Y. K. Su, S. J. Chang, S. C. Chen, L. W. Ji, T. H. Fang, L. W. Tu and M. Chen,
"Self-formation of GaN hollow nanocolumns by inductively coupled plasma etching", Appl.
Phys. A, Vol. 80, No. 8, pp. 1607-1610, May 2005.
556. T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, S. P. Chang, C. M. Chang, J. J.
Tang and B. R. Huang, "ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates",
Mater. Sci. Eng. B, Vol. 119, No. 2, pp. 202-205, May 2005.
557. C. L. Hsu, S. J. Chang, H. C. Hung, Y. R. Lin, C. J. Huang, Y. K. Tseng and I. C. Chen,
"Well-aligned, vertically Al-doped ZnO nanowires synthesized on ZnO:Ga/glass templates", J.
Electrochem. Soc., Vol. 152, No. 5, pp. G378-G381, May 2005.
558. J. D. Hwang, Z. Y. Lai, C. Y. Wu and S. J. Chang, "Enhancing P-type conductivity in
Mg-doped GaN using oxygen and nitrogen plasma activation", Jpn. J. Appl. Phys., Vol. 44, No.
4A, pp. 1726-1729, April 2005.
559. M. L. Tu, Y. K. Su, S. J. Chang, T. H. Fang, W. H. Chen and H. Yang, "Improved performance
of 2,3-dibutoxy-1,4-phenylene vinylene based polymer light-emitting diodes by thermal
annealing", Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2787-2789, April 2005.
560. C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei and H. M. Lo,
"Nitride-based power chip with indium-tin-oxide p-contact and Al back-side reflector", Jpn. J.
Appl. Phys., Vol. 44, No. 4B, pp. 2462-2464, April 2005.
561. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. H. Kuo, C. S. Chang, T. K. Lin, T. K. Ko
and J. J. Tang, "Noise characteristics of AlGaN/GaN/AlGaN double heterostructure
metal-oxide-semiconductor heterostructure field effect transistors with photochemical vapor
deposition SiO2 layer", Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2458-2461, April 2005.
562. S. H. Hsu, Y. K. Su, R. W. Chuang, S. J. Chang, W. C. Chen and W. R. Chen, "Study of
electronic properties by persistent photoconductivity measurement in GaxIn1-xNyAs1-y grown
by MOCVD", Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2454-2457, April 2005.
563. C. L. Yu, C. H. Chen, S. J. Chang, Y. K. Su, S. C. Chen, P. C. Chang, P. C. Chen, M. H. Wu,
H. C. Chen and K. C. Su, "In0.37Ga0.63N metal-semiconductor-metal photodetectors with
recessed electrodes", IEEE Photon. Technol. Lett., Vol. 17, No. 4, pp. 875-877, April 2005.
564. W. S. Chen, S. J. Chang, Y. K. Su, C. T. Lee, R. L. Wang, C. H. Kuo and S. C. Chen,
"AlxGa1-xN/GaN HEMTs with various Al mole fractions in AlGaN barrier", J. Crystal Growth,
Vol. 275, No. 3-4, pp. 398-403, March 2005.
565. Y. R. Lin, Y. K. Tseng, S. S. Yang, S. T. Wu, C. L. Hsu and S. J. Chang, "Buffer-facilitated
epitaxial growth of ZnO nanowire", Crystal Growth & Design, Vol. 5, No. 2, pp. 579-583,
March 2005.
566. Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. H. Kuo, C. S. Chang and S. C. Shei, "ICP
etching of sapphire substrates", Optical Mater., Vol. 27, No. 6, pp. 1171-1174, March 2005.
567. S. M. Wang, C. H. Chen, S. J. Chang, Y. K. Su and B. R. Huang, "Mg-doped GaN activated
with Ni catalysts", Mater. Sci. Eng. B, Vol. 117, No. 2, pp. 107-111, March 2005.
568. Y. K. Su, P. C. Chang, C. H. Chen, S. J. Chang, C. L. Yu, C. T. Lee, H. Y. Lee, J. Gong, P. C.
Chen and C. H. Wang, "Nitride-based MSM UV photodetectors with photo-CVD annealed
Schottky contacts", Solid State Electron., Vol. 49, No. 3, pp. 459-463, March 2005.
569. C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A Ku-band four-stage
temperature compensated PHEMT MMIC power amplifier", Microwave Optical Technol. Lett.,
Vol. 44, No. 5, pp. 480-485, March 2005.
570. J. L. Yang, J. S. Chen and S. J. Chang, "Effect of Au distribution in NiO/Au film on the ohmic
contact formation to p-type GaN", J. Materials Research, Vol. 20, No. 2, pp.456-463, February,
2005.
571. Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, "SiGe/Si PMOSFET using graded
channel technique", Mater. Sci. Semicond. Processing, Vol. 8, No. 1-3, pp. 367-370,
35
February-June 2005..
572. P. W. Chien, S. L. Wu, S. J. Chang, S. Koh and Y. Shiraki, "High-performance SiGe
heterostructure FET grown on silicon-on-insulator ", Mater. Sci. Semicond. Processing, Vol. 8,
No. 1-3, pp. 367-370, February-June 2005..
573. C. H. Lee, S. L. Wu and S. J. Chang, "SiGe heterostructure field-effect transistor with ICP
mesa treatments", Mater. Sci. Semicond. Processing, Vol. 8, No. 1-3, pp. 371-375,
February-June 2005.
574. T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, C. M. Chang and B. R. Huang,
"ZnSe homoepitaxial MSM photodetectors with transparent ITO contact electrodes", IEEE
Tran. Electron. Dev., Vol. 52, No. 1, pp. 121-123, January 2005.
575. J. D. Hwang, G. H. Yang, W. T. Chang, C. C. Lin, R. W. Chuang and S. J. Chang, "A novel
transparent ohmic contact of indium tin oxide to n-type GaN", Microelectron. Eng., Vol. 77,
No. 1, pp. 71-75, January 2005.
576. T. M. Kuan, S. J. Chang, Y. K. Su, J. C. Lin, C. W. H. Lan, J. A. Bardwell, H. Tang, W. J. Lin
and Y. T. Cherng, "High performance GaN/InGaN HFETs on Mg-doped GaN carrier blocking
layers", J. Cryst. Growth, Vol. 272, No. 1-4, pp. 300-304, December 2004.
577. S. H. Hsu, Y. K. Su, S. J. Chang, K. I. Lin, W. H. Lan, P. S. Wu and C. H. Wu, "Temperature
dependence of the optical properties on GaInNP", J. Cryst. Growth, Vol. 272, No. 1-4, pp.
765-771, December 2004.
578. P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, C. L. Yu, P. C. Chen and C. H. Wang,
"AlGaN/GaN MSM photodetectors with photo-CVD annealed Ni/Au semi-transparent
contacts", Semicond. Sci. Technol., Vol. 19, No. 12, pp. 1354-1357, December 2004.
579. C. L. Hsu, S. S. Yang, Y. K. Tseng, I. C. Chen, Y. R. Lin, S. J. Chang and S. T. Wu, "A new
and simple means for self-assembled nanostructure: facilitated by buffer layer", J. Phys. Chem.
B, Vol. 108, No. 49, pp. 18799-18803, December 2004.
580. X. H. Wang, X. W. Fan, C. X. Shan, Z. Z. Zhang, J. Y. Zhang, Y. M. Lu, Y. C. Liu, D. Z. Shen,
Y. K. Su and S. J. Chang, "MOVPE growth of ZnSe films on ZnO/Si templates", Mater. Chem.
Phys., Vol. 88, No. 1, pp. 102-105, November 2004.
581. L. W. Ji, Y. K. Su, S. J. Chang, S. C. Hung, C. S. Chang, and L. W. Wu, "Nitride-based
light-emitting diodes with InGaN/GaN SAQD active layers", IEE Proc. - Circuit, Devices &
Systems, Vol. 151, No. 5, pp. 486-488, October 2004.
582. K. T. Liu, Y. K. Su, S. J. Chang, K. Onomitsu and Y. Horikoshi, "Donor isoelectronic trap pair
luminescence from Mg and P co-implanted GaN grown by MOCVD", Phys. Stat. Sol. B, Vol.
241, No. 12, pp. 2003-2007, October 2004.
583. T. C. Wen, S. J. Chang, C. T. Lee, W. C. Lai and J. K. Sheu, "Nitride-based LEDs with
modulation doped Al0.12Ga0.88N/GaN superlattice structures", IEEE Tran. Electron. Dev., Vol.
51, No. 10, pp. 1743-1746, October 2004.
584. C. H. Lin, Y. K. Su, Y. Z. Juang, R. W. Chung, S. J. Chang, J. F. Chen and C. H. Tu, "The
effect of geometry on the noise characterization of SiGe HBTs and optimized device sizes for
the design of low noise amplifiers", IEEE Tran. Microwave Theory Technol., Vol. 52, No. 9,
pp. 2153-2162, September 2004.
585. C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A Ka-band PHEMT diode
double balanced star mixer MMIC", Microwave Optical Technol. Lett., Vol. 42, No. 6, pp.
455-458, September 2004.
586. C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, L. W. Wu and C. C. Lin, "Improved light
output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface", Mater.
Sci. Eng. B, Vol. 112, No. 1, pp. 10-13, September 2004.
587. C. K. Wang, S. J. Chang, Y. K. Su, C. S. Chang, Y. Z. Chiou, C. H. Kuo, T. K. Lin, T. K. Ko,
and J. J. Tang, "GaN MSM photodetectors with TiW transparent electrodes", Mater. Sci. Eng.
B, Vol. 112, No. 1, pp. 25-29, September 2004.
36
588. M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang, W. C. Lai and G. C. Chi, "Reducetion of dark
current in AlGaN/GaN Schottky barrier photodetectors with a low temperature grown GaN
cap layer", IEEE Electron Dev. Lett., Vol. 25, No. 9, pp. 593-595, September 2004.
589. C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, C. H. Kuo, J. M. Tsai and C. C. Lin,
"InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers", Mater. Sci. Eng. B, Vol.
111, No. 2-3, pp. 214-217, August 2004.
590. C. H. Lee, S. L. Wu and S. J. Chang, "Improved performance of SiGe doped-channel
field-effect transistors using inductively coupled plasma etching", Semicond. Sci. Technol., Vol.
19, No. 8, pp. 1053-1056, August 2004.
591. C. W. Huang, S. J. Chang, W. Wu, C. L. Wu and C. S. Chang, "A three-stage Ka band
PHEMT wideband amplifier MMIC", Microwave and Optical Technol. Lett., Vol. 42, No. 4,
pp. 277-280, August 2004.
592. C. H. Wang, S. J. Chang and P. C. Chang, "Effect of sintering conditions on characteristics of
PbTiO3-PbZrO3-Pb(Mg1/3Nb2/3)O3-Pb(Zn1/3Nb2/3)O3", Mater. Sci. Eng. B, Vol. 111, No. 2-3, pp.
124-130, August 2004.
593. Y. K. Su, H. C. Yu, S. J. Chang, C. T. Lee, J. S. Wang, A. R. Kovsh, Y. T. Wu, K. F. Lin and C.
Y. Huang, "1.3m InAs quantum dot resonant-cavity light emitting diodes", Mater. Sci. Eng. B,
Vol. 110, No. 3, pp. 256-259, July 2004.
594. Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W. H. Lan, Y. T. Cherng and S. C.
Chen, "Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet
etching", Mater. Sci. Eng. B, Vol. 110, No. 3, pp. 260-264, July 2004.
595. Y. K. Su, S. J. Chang, T. M. Kuan, C. H. Ko, J. B. Webb, W. H. Lan, Y. T. Cherng and S. C.
Chen, "Nitride-based HFETs with carrier confinement layers", Mater. Sci. Eng. B, Vol. 110,
No. 2, pp. 172-176, July 2004.
596. K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su and S. J. Chang, "Improved
crystal quality for MBE grown GaN layers", Mater. Chem. Phys., Vol. 86, No. 1, pp. 161-164,
July 2004.
597. C. H. Wu, Y. K. Su, S. J. Chang, Y. S. Huang and Y. P. Hsu, "Device characteristics of the
GaAs-based heterojunction bipolar transistors using InGaAs/GaAsP strain compensated layers
as base material", Semicond. Sci. Technol , Vol. 19, No. 7, pp. 828-832, July 2004.
598. K. S. Ramaiah, Y. K. Su, S. J. Chang, C. H. Chen, F. S. Juang, H. P. Liu and I. G. Chen,
"Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by
metalorganic chemical vapor deposition", Appl. Phys. Lett., Vol. 85, No. 3, pp. 401-403, July
2004.
599. S. L. Wu, P. W. Chien, S. J. Chang, S. Koh and Y. Shiraki, "Influences of delta-doping
position on the characteristics of SiGe-Si DCFETs", IEEE Electron. Dev. Lett., Vol. 25, No. 7,
pp. 477-479, July 2004.
600. S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu and C. T. Lee,
"Nitride-based LEDs with 800oC-grown p-AlInGaN/GaN double cap layers", IEEE Photon.
Technol. Lett., Vol. 16, No. 6, pp. 1447-1449, June 2004.
601. C. H. Liu, C. K. Wang, S. J. Chang and Y. K. Su, "High transconductance nitride-based
MOSHFETs", Mater. Sci. Eng. B, Vol. 110, No. 1, pp. 32-33, June 2004.
602. L. W. Ji, Y. K. Su, S. J. Chang, S. T. Tsai, S. C. Hung, R. W. Chuang, T. H. Fang and T. Y. Tsai,
"Growth of InGaN self-assembled quantum dots and their application to photodetectors", J.
Vac. Sci. Technol. A, Vol. 22, No. 3, pp. 792-795, May/June 2004.
603. C. H. Chen, S. J. Chang and Y. K. Su, "InGaN/AlGaN near-ultraviolet multiple quantum well
light-emitting diodes with p-InGaN tunneling contact layer", J. Vac. Sci. Technol. A, Vol. 22,
No. 3, pp. 1020-1022, May/June 2004.
604. K. S. Ramaiah, Y. K. Su, S. J. Chang, B. Kerr, H. P. Liu and I. G. Chen, "Characterization of
InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical
37
vapor deposition", Appl. Phys. Lett., Vol. 84, No. 17, pp. 3307-3309, April 2004.
605. P. C. Chang, C. H. Chen, S. J. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, C. M. Wang
and B. R. Huang, "InGaN/GaN MQW MIS photodetectors with photo-CVD SiO2 layers", Jpn.
J. Appl. Phys., Vol. 43, No. 4B, pp. 2008-2010, April 2004.
606. H. C. Yu, S. J. Chang, Y. K. Su, C. P. Sung, H. P. Yang, C. Y. Huang, Y. W. Lin, J. M. Wang, F.
I. Lai, H. C. Kuo, "Improvement of high speed oxide confined vertical cavity surface emitting
lasers", Jpn. J. Appl. Phys., Vol. 43, No. 4B, pp. 1947-1950, April 2004.
607. C. H. Wu, Y. K. Su, S. C. Wei, S. J. Chang, C. C. Sio and S. C. Chen, "Reduction of turn-on
voltage in GaInNAs/InGaAs base double heterojunction bipolar transistors", Jpn. J. Appl.
Phys., Vol. 43, No. 4B, pp. 1919-1921, April 2004.
608. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin,
S. C. Shei, H. M. Lo, J. C. Ke and J. K. Sheu, "Nitride-based LEDs with an SPS tunneling
contact layer and an ITO transparent contact", IEEE Photon. Technol. Lett., Vol. 16, No. 4, pp.
1002-1004, April 2004.
609. Y. K. Su, C. H. Wu, Y. S. Huang, Y. P. Hsu, W. C. Chen, S. H. Hsu and S. J. Chang,
"Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material:
GaInNP grown on GaAs substrates", J. Crystal Growth, Vol. 264, No. 1-3, pp. 1919-1921,
March 2004.
610. C. H. Liu, S. J. Chang, J. F. Chen, J. S. Lee, S. C. Chen and U. H. Liaw, "Electrical and
reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal
oxidation and annealed in nitric oxide", Mater. Sci. Eng. B, Vol. 107, No. 3, pp. 310-316,
March 2004.
611. C. S. Chang, S. J. Chang, Y. K. Su, C. T. Lee, Y. C. Lin, W. C. Lai, S. C. Shei, J. C. Ke and H.
M. Lo, "Nitride-based LEDs with textured side walls", IEEE Photon. Technol. Lett., Vol. 16,
No. 3, pp. 750-752, March 2004.
612. K. T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y. K. Su and S. J. Chang, "Modulated
beam growth method for MBE grown GaN layers", J. Crystal Growth, Vol. 263, No. 1-4, pp.
400-405, March 2004.
613. L. W. Ji, Y. K. Su, S. J. Chang, C. S. Chang, L. W. Wu, W. C. Lai, X. L. Du and H. Chen,
"InGaN/GaN multi-quantum dot light-emitting diodes", J. Crystal Growth, Vol. 263, No. 1-4,
pp. 114-118, March 2004.
614. L. W. Ji, Y. K. Su, S. J. Chang, T. H. Fang, T. C. Wen, and S. C. Hung, "Growth of ultra
small self-assembled InGaN nanotips", J. Crystal Growth, Vol. 263, No. 1-4, pp. 63-67, March
2004.
615. Y. K. Su, S. J. Chang, L. W. Ji, C. S. Chang, L. W. Wu, W. C. Lai, T. H. Fang and K. T. Lam,
"InGaN/GaN blue light-emitting diodes with self-assembled quantum dots", Semicond. Sci.
Technol., Vol. 19, No. 3, pp. 389-392, March 2004.
616. Y. K. Su, C. H. Wu, S. H. Hsu, S. J. Chang, W. C. Chen, Y. S. Huang and H. P. Hsu,
"Observation of spontaneous ordering in the optoelectronic material GaInNP", Appl. Phys.
Lett., Vol. 84, No. 8, pp. 1299-1301, February 2004.
617. L. W. Ji, Y. K. Su, S. J. Chang, S. C. Hung, C. K. Wang, T. H. Fang, T. Y. Tsai,R. Chuang, W.
Su and J. C. Zhong, "InGaN metal-semiconductor-metal photodiodes with nanostructures",
Jpn. J. Appl. Phys., Vol. 43, No. 2, pp. 518-521, February 2004.
618. X. H. Wang, X. W. Fan, C. X. Shan, Z. Z. Zhang, W. Su, J. Y. Zhang, Y. K. Su, S. J. Chang, Y.
M. Lu, Y. C. Liu and D. Z. Shen, "Growth of ZnSe films on ZnO-Si templates", Mater. Sci.
Eng. B, Vol. 107, No. 1, pp. 84-88, February 2004.
619. C. H. Liu, S. J. Chang, J. F. Chen, S. C. Chen, J. S. Lee and U. H. Liaw, "High quality ultra
thin chemical-vapor-deposited Ta2O5 capacitors prepared by high density plasma annealing",
Mater. Sci. Eng. B, Vol. 106, No. 3, pp. 234-241, February 2004.
620. Y. P. Hsu, S. J. Chang, Y. K. Su, J. K. Sheu, C. T. Lee, T. C. Wen, L. W. Wu, C. H. Kuo, C. S.
38
Chang and S. C. Shei, "Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs", J.
Crystal Growth, Vol. 231, No. 4, pp. 466-470, February 2004.
621. C. H. Liu, L. W. Wu, S. J. Chang, J. F. Chen, U. H. Liaw and S. C. Chen, "Ion Implantation
technology for improved GaAs MESFETs performance", J. Mater. Sci.: Mater. Electron., Vol.
15, No. 2, pp. 91-93, February 2004.
622. H. C. Yu, S. J. Chang, Y. K. Su, C. P. Sung, Y. W. Lin, H. P. Yang, C. Y. Huang and J. M.
Wang, "A simple process for fabrication of high speed vertical cavity surface emitting lasers",
Mater. Sci. Eng. B, Vol. 106, No. 1, pp. 101-104, January 2004.
623. C. H. Kuo, S. J. Chang, Y K. Su, C. S. Chang, L. W. Wu, W. C. Lai, J. F. Chen, J. K. Sheu, H.
M. Lo and J. M. Tsai, "Nitride-based near-ultraviolet LEDs with an ITO transparent contact",
Mater. Sci. Eng. B, Vol. 106, No. 1, pp. 69-72, January 2004.
624. S. J. Chang, C. H. Chen, P. C. Chang, Y. K. Su, P. C. Chen, Y. D. Jhou, H. Hung, C. M. Wang
and B. R. Huang, "Nitride-based LEDs with p-InGaN capping layer", IEEE Tran. Electron.
Dev., Vol. 50, No. 12, pp. 2567-2570, December 2003.
625. S. J. Chang, Y. K. Su, Y. C. Lin, R. W. Chuang, C. S. Chang, J. K. Sheu, T. C. Wen, S. C.
Shei, C. W. Kuo and D. H. Fang, "MOCVD growth of InGaN/GaN light emitting diodes on
patterned sapphire substrates", Phys. Stat. Sol. C, Vol. 0, No. 7, pp. 2253-2256, December
2003.
626. C. H. Chen, S. J. Chang and Y. K. Su, "InGaN/GaN multiple-quantum-well dual-wavelength
near-white light emitting diodes", Phys. Stat. Sol. C, Vol. 0, No. 7, pp. 2257-2260, December
2003.
627. C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, T. K. Lin and B. R. Huang, "Low interface
state density AlGaN/GaN MOSHFETs with photochemical vapor deposition SiO2 layers",
Phys. Stat. Sol. C, Vol. 0, No. 7, pp. 2355-2359, December 2003.
628. Y. M. Lin, S. L. Wu, S. J. Chang, S. Koh and Y. Shiraki, "P-Type enhancement mode SiGe
doped channel field effect transistor", Jpn. J. Appl. Phys. Lett., Vol. 42, No. 12A, pp.
L1422-L1424, December 2003.
629. C. K. Wang, T. K. Lin, Y. Z. Chiou, S. J. Chang, Y. K. Su, C. H. Kuo and T. K. Ko, "High
transconductance AlGaN/GaN MOSHFETs with photo-CVD gate oxide", Semicond. Sci.
Technol., Vol. 18, No. 12, pp. 1033-1036, December 2003.
630. W. Su, J. C. Zhong, W. L. Liu, Y. K. Su, S. J. Chang, H. C. Yu, L. W. Ji, L. Li and Y. J.
Zhao, "Design and numerical simulation of novel DBRs", Chinese Opt. Lett., Vol. 200, No. 1,
pp. 674-676, November 2003.
631. C. H. Chen, S. J. Chang and Y. K. Su, "High electrostatic discharge protection of InGaN/GaN
MQW LEDs by using GaN Schottky diodes", Phys. Stat. Sol. (a), Vol. 200, No. 1, pp. 91-94,
November 2003.
632. C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, C.
M. Tsai, H. M. Lo, J. C. Ke and J. K. Sheu, "High brightness InGaN LEDs with an ITO on
n++-SPS upper contact", IEEE Tran. Electron. Dev., Vol. 50, No. 11, pp. 2208-2212,
November 2003.
633. C. H. Kuo, S. J. Chang, Y. K. Su, C. K. Wang, L. W. Wu J. K. Sheu, T. C. Wen, W. C. Lai, J.
M. Tsai and C. C. Lin, "Nitride-based blue LEDs with GaN/SiN double buffer layers", Solid
State Electron., Vol. 47, No. 11, pp. 2019-2022, November 2003.
634. S. J. Chang, T. M. Kuan, Y. K. Su, C. H. Ko, J. B. Webb, J. A. Bardwell, Y. Liu, H. Tang, W.
J. Lin, Y. T. Cherng and W. H. Lan, "Nitride-based 2DEG photodetectors with a large AC
responsivity", Solid State Electron., Vol. 47, No. 11, pp. 2023-2026, November 2003.
635. L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. P. Hsu, C. H. Kuo, W. C. Lai, T. C. Wen,
J. M. Tsai and J. K. Sheu, "In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap
layer", Solid State Electron., Vol. 47, No. 11, pp. 2027-2030, November 2003.
39
636. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin
and J. C. Ke, "Highly reliable nitride based LEDs with SPS+ITO upper contacts", IEEE J.
Quan. Electron., Vol. 39, No. 11, pp. 1439-1443, November 2003.
637. L. W. Ji, Y. K. Su, S. J. Chang, S. H. Liu, C. K. Wang, S. T. Tsai, T. H. Fang, L. W. Wu and Q,
K. Xue, "InGaN quantum dot photodetectors", Solid State Electron., Vol. 47, No. 10, pp.
1753-1756, October 2003.
638. Y. K. Su, S. C. Wei, R. L. Wang, S. J. Chang, C. H. Ko and T. M. Kuan, "Flicker noise of
GaN-based heterostructure field-effect transistors with Si-doped AlGaN carrier injection
layer", IEEE Electron. Dev. Lett., Vol. 24, No. 10, pp. 622-624, October 2003.
639. L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, Q. K. Xue, W. C. Lai and Y. Z. Chiou,
"A novel method to fabricate InGaN self-assembled quantum dots by metalorganic chemical
vapor deposition", Mater. Lett., Vol. 57, No. 26-27, pp. 4218-4221, September 2003.
640. C. H. Ko, Y K. Su, S. J. Chang, T. Y. Tsai, T. M. Kuan, W. H. Lan, J. C. Lin, W. J. Lin, Y. T.
Cherng and J. B. Webb, "Two-step epitaxial lateral overgrowth of GaN", Mater. Chem. Phys.,
Vol. 82, No. 1, pp. 55-60, September 2003.
641. T. M. Kuan, S. J. Chang, C. H. Ko, Y. K. Su, J. B. Webb, J. A. Bardwell, Y. Liu, H. Tang, W. J.
Lin, Y. T. Cherng and W. H. Lan, "High optical gain AlGaN/GaN 2DEG photodetectors", Jpn.
J. Appl. Phys. Lett , Vol. 42, No. 9A, pp. 5563-5564, September 2003.
642. S. J. Chang, Y. C. Lin, Y. K. Su, C. S. Chang, T. C. Wen, S. C. Shei, J. C. Ke, C. W. Kuo, S. C.
Chen and C. H. Liu, "Nitride-based LEDs fabricated on patterned sapphire substrates", Solid
State Electron., Vol. 47, No. 9, pp. 1539-1542, September 2003.
643. Y. C. Lin, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei, J. C. Ke, H. M. Lo, S. C. Chen and
C. W. Kuo, "High power nitride based light emitting diodes with Ni/ITO p-type contacts",
Solid State Electron., Vol. 47, No. 9, pp. 1565-1568, September 2003.
644. Y. Z. Chiou, S. J. Chang, Y. K. Su, C. K. Wang, T. K. Lin and B. R. Huang, "Photo-CVD SiO2
layers on AlGaN and AlGaN/GaN MOSHFET", IEEE Tran. Electron. Dev., Vol. 50, No. 8, pp.
1748-1752, August 2003.
645. L. W. Wu, S. J. Chang, Y. K. Su, R. W. Chuang, T. C. Wen, C. H. Kuo, W. C. Lai, C. S. Chang,
J. M. Tsai and J. K. Sheu, "Nitride-based green light emitting diodes with high temperature
GaN barrier layers", IEEE Tran. Electron. Dev., Vol. 50, No. 8, pp. 1766-1770, August 2003.
646. M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, S. J. Chang, C. J. Kao, C. J. Tun, M. G. Chen, W.
H. Chang, G. C. Chi and J. M. Tsai, "Characterization of GaN Schottky barrier photodetectors
with a low-temperature GaN cap layer", J. Appl. Phys., Vol. 94, No. 3, pp. 1753-1757, August
2003.
647. C. H. Liu, Y. K. Su, T. C. Wen, S. J. Chang and R. W. Chuang, "Nitride-based green light
emitting diodes grown by temperature ramping", J. Crystal Growth, Vol. 254, No. 3-4, pp.
336-341, July 2003.
648. C. H. Liu, C. S. Chang S. J. Chang, Y. K. Su, Y. Z. Chiou, S. H. Liu and B. R. Huang, "The
characteristics of photo-CVD SiO2 and its application on SiC MIS photodetectors", Mater. Sci.
Eng. B, Vol. 100, No. 2, pp. 142-146, July 2003.
649. C. S. Chang, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. C. Ke, H,
M, Lo, S. C. Chen and C. H. Liu, "InGaN/GaN light emitting diodes with rapid thermal
annealed Ni/ITO p-contacts", Jpn. J. Appl. Phys., Vol. 42, No. 6A, pp. 3324-3327, June 2003.
650. S. J. Chang, S. C. Wei, Y. K. Su, C. H. Liu, S. C. Chen, U. H. Liaw, T. Y. Tsai and T. H. Hsu,
"AlGaN/GaN MODFETs with an Mg-doped current confinement layer", Jpn. J. Appl. Phys.,
Vol. 42, No. 6A, pp. 3316-3319, June 2003.
651. C. H. Liu, Y. K. Su, L. W. Wu, S. J. Chang and R. W. Chuang, "Tunneling efficiency of
n+-InGaN/GaN SPS tunneling contact layer for nitride-based LEDs", Semicond. Sci. Technol.,
Vol. 18, No. 6, pp. 545-548, June 2003.
652. X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee, G. C. Chi and
40
S. J. Chang, "Deep level defect in Si-implanted GaN n+-p junction", Appl. Phys. Lett., Vol. 82,
No. 21, pp. 3671-3673, May 2003.
653. Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, C. S. Chang and S. H. Liu, "The properties of
photo chemical vapor deposition SiO2 and its application in GaN metal insulator
semiconductor ultraviolet photodetectors", J. Electron. Mater., Vol. 32, No. 5, pp. 395-399,
May 2003.
654. J. K. Sheu, C. J. Kao, M. L. Lee, W. C. Lai, L. S. Yeh, G. C. Chi, S. J. Chang, Y. K. Su and J.
M. Tsai, "Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a
low-temperature GaN layer", J. Electron. Mater., Vol. 32, No. 5, pp. 400-402, May 2003.
655. Y. P. Hsu, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei. Y. C. Lin, C. H. Kuo, L. W. Wu and
S. C. Chen, "InGaN/GaN light emitting diodes with a reflector at the backside of sapphire
substrates", J. Electron. Mater., Vol. 32, No. 5, pp. 403-406, May 2003.
656. C. K. Wang, Y. Z. Chiou, S. J. Chang, Y. K. Su, B. R. Huang, T. K. Lin and S. C. Chen,
"AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor with photo
chemical vapor deposition SiO2 gate oxide", J. Electron. Mater., Vol. 32, No. 5, pp. 407-410,
May 2003.
657. L. W. Wu, S. J. Chang, Y. K. Su, T. Y. Tsai, T. C. Wen, C. H. Kuo, W. C. Lai, J. K. Sheu, J. M.
Tsai, S. C. Chen and B. R. Huang, "InGaN/GaN LEDs with a Si-doped InGaN/GaN
short-period superlattice tunneling contact layer", J. Electron. Mater., Vol. 32, No. 5, pp.
411-414, May 2003.
658. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. M. Tsai and S.
C. Chen, "Nitride-based near ultraviolet multiple quantum well light emitting diodes with
AlGaN barrier layers", J. Electron. Mater., Vol. 32, No. 5, pp. 415-418, May 2003.
659. T. C. Wen, S. J. Chang, Y. K. Su, L. W. Wu, C. H. Kuo, W. C. Lai and J. K. Sheu,
"InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature
ramping", J. Electron. Mater., Vol. 32, No. 5, pp. 419-422, May 2003.
660. Y. Z. Chiou, Y. K. Su, S. J. Chang, J. Gong, Y. C. Lin, S, H, Liu and C. S. Chang,
"InGaN/GaN multiquantum well p-n junction photodiodes", IEEE J. Quan. Electron., Vol. 39,
No. 5, pp. 681-685, May 2003.
661. Y. K. Su, S. J. Chang, Y. Z. Chiou, T. Y. Tsai, J. Gong, Y. C. Lin, S. H. Liu and C. S. Chang,
"Nitride-based multiquantum well p-n junction photodiodes", Solid State Electron., Vol. 47,
No. 5, pp. 879-883, May 2003.
662. L. S. Yeh, M. L. Lee, J. K. Sheu, M. G. Chen, C. J. Kao, C. J. Tun, G. C. Chi, S. J. Chang and
Y. K. Su, "Visible-blind GaN p-i-n photodiodes with an Al0.12Ga0.88N/GaN superlattice
structure", Solid State Electron., Vol. 47, No. 5, pp. 873-878, May 2003.
663. Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, S. C. Chang, S. C. Shei, C. W. Kuo and S. C. Chen,
“InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts”, Solid State
Electron., Vol. 47, No. 5, pp. 849-853, May 2003.
664. S. C. Wei, Y. K. Su, T. M. Kuan, R. L. Wang, S. J. Chang, C. H. Ko, J. B. Webb and J. A.
Bardwell, "Investigation of low frequency noise of GaN-based heterostructure field effect
transistors", Electron. Lett., Vol. 39, No. 11, pp. 877-878, May 2003.
665. S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi and
J. M. Tsai, "GaN metal-semiconductor-metal photodetectors with low-temperature GaN cap
layers and ITO metal contacts", IEEE Electron. Dev. Lett., Vol. 24, No. 4, pp. 212-214, April
2003.
666. Y. Z. Chiou, Y. K. Su, S. J. Chang and C. H. Chen, "GaN metal semiconductor interface and
its applications in GaN and InGaN metal semiconductor metal photodetectors", IEE Proc. Optoelectron., Vol. 150, No. 2, pp. 115-118, April 2003.
667. C. S. Chang, S. J. Chang, Y. K. Su, Y. C. Lin, Y. P. Hsu, S. C. Shei, S. C. Chen, C. H. Liu and
U. H. Liaw, “InGaN/GaN light emitting diodes with ITO p-contact layers prepared by RF
41
sputtering”, Semicond. Sci. Technol., Vol. 18, No. 4, pp. L21-L23, April 2003.
668. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. F. Chen, J. K. Sheu and J. M. Tsai, "GaN-based
light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice current
spreading layer", Jpn. J. Appl. Phys., Vol. 42, No. 4B, pp. 2270-2272, April 2003.
669. C. H. Chen, S. J. Chang and Y. K. Su, "High indium content InGaN/GaN multiple quantum
well yellowish green light emitting diodes", Jpn. J. Appl. Phys., Vol. 42, No. 4B, pp.
2281-2283, April 2003.
670. C. H. Kuo, J. K. Sheu, S. J. Chang, Y. K. Su, L. W. Wu, J. M. Tsai, C. H. Liu and R. K. Wu,
"n-UV+blue/green/red white light emitting diode lamps", Jpn. J. Appl. Phys., Vol. 42, No. 4B,
pp. 2284-2287, April 2003.
671. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J. Kao, G. C. Chi and J.
M. Tsai, "GaN Schottky barrier photodetectors with a low-temperature GaN cap layer", Appl.
Phys. Lett., Vol. 82, No. 17, pp. 2913-2915, April 2003.
672. Y. Z. Chiou, J. R. Chiou, Y. K. Su, S. J. Chang, B. R. Huang, C. S. Chang and Y. C. Lin, "The
characteristics of different transparent electrodes on GaN photodetectors", Mater. Chem. Phys.,
Vol. 80, No. 1, pp. 201-204, April 2003.
673. H. R. Wu, K. W. Lee, T. B. Nian, D. W. Chou, J. J. Huang, Y. H. Wang, M. P. Houng, P. W. Sze,
Y. K. Su, S. J. Chang, C. H. Ho, C. I. Chiang, Y. T. Chern, F. S. Juang, T. C. Wen, W. I. Lee
and J. I. Chyi, "Liquid phase deposited SiO2 on GaN", Mater. Chem. Phys., Vol. 80, No. 1, pp.
329-333, April 2003.
674. S. J. Chang, C. H. Chen, Y. K. Su, J. K. Sheu, W. C. Lai, J. M. Tsai, C. H. Liu and S. C. Chen,
"Improved ESD protection by combining InGaN/GaN MQW LED with GaN Schottky diode",
IEEE Electron. Dev. Lett., Vol. 24, No. 3, pp. 129-131, April 2003.
675. Y. M. Lin, S. L. Wu, S. J. Chang, S. Koh and Y. Shiraki, "SiGe heterostructure field-effect
transistor using V-shaped confining potential well", IEEE Electron. Dev. Lett., Vol. 24, No. 2,
pp. 69-71, February 2003.
676. S. J. Chang, L. W. Wu, Y. K. Su, C. H. Kuo, W. C. Lai, Y. P. Hsu, J. K. Sheu, J. F. Chen and J.
M. Tsai, "Si and Zn co-doped InGaN/GaN white light emitting diodes", IEEE Tran. Electron.
Dev., Vol. 36, No. 2, pp. 519-521, February 2003.
677. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, W. C. Lai, T. C. Wen and J. M. Tsai,
"Nitride-based light-emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice
tunneling contact layer", IEEE Tran. Electron. Dev., Vol. 36, No. 2, pp. 535-537, February
2003.
678. Y. C. Lin, S. J. Chang, Y. K. Su, J. F. Chen, S. C. Shei, S. J. Hsu, C. H. Liu, U. H. Liaw and B.
R. Huang, “Inductively coupled plasma etching of GaN using Cl2/He gases”, Mater. Sci. Eng.
B, Vol. 98, No. 1, pp. 60-64, February 2003.
679. S. J. Chang, Y. K. Su, Y. Z. Chiou, J. R. Chiou, B. J. Huang, C. S. Chang and J. F. Chen,
"Deposition of SiO2 layers on GaN by photo chemical vapor deposition", J. Electrochem. Soc.,
Vol. 150, No. 2, pp. C77-C80, February 2003.
680. L. W. Ji, Y. K. Su, S. J. Chang, L. W. Wu, T. H. Fang, J. F. Chen, T. Y. Tsai, Q. K. Xue and S.
C. Chen, "Growth of nanoscale InGaN self-assembled quantum dots and their
room-temperature photoluminescence", J. Crystal Growth, Vol. 249, No. 1-2, pp. 144-148,
February 2003.
681. Y. Z. Chiou, C. S. Chang, S. J. Chang, Y. K. Su, J. R. Chiou, B. J. Huang and J. F. Chen,
"Deposition of SiO2 layers on 4H-SiC by photo chemical vapor deposition", J. Vac. Sci.
Technol. B, Vol. 21, No. 1, pp. 329-331, January 2003.
682. J. K. Sheu, S. J. Chang, C. H. Kuo, Y K. Su, L. W. Wu, Y. C. Lin, J. M. Tsai, R. K. Wu and G.
C. Chi, "White light emission from near UV InGaN/GaN LED chip precoated with
blue/green/red phosphors", IEEE Photon. Technol. Lett., Vol. 15, No. 1, pp. 18-20, January
2003.
42
683. P. W. Chien, S. C. Li, S. L. Wu and S. J. Chang, "Fabricating -doped layers in silicon by
ultra high vacuum chemical vapor deposition", Mater. Chem. Phys. Vol. 77, No. 2, pp.
426-429, January 2003.
684. J. S. Lee, S. J. Chang, J. F. Chen, S. C. Sun, C. H. Liu and U. H. Liaw, "Effects of O2 thermal
annealing on the properties of CVD Ta2O5 thin films", Mater. Chem. Phys., Vol. 77, No. 1, pp.
242-247, January 2003.
685. Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, S. J. Hsu, C. H. Liu, U. H.
Liaw, S. C. Chen and B. R. Huang, “Nitride-based light emitting diodes with Ni/ITO p-type
ohmic contacts”, IEEE Photon. Technol. Lett., Vol. 14, No. 12, pp. 1668-1670, December
2002.
686. H. Tang, J. B. Webb, S. Rolfe, J. A. Bardwell, D. Tomka, P. Coleridge, C. H. Ko, Y. K. Su and
S. J. Chang, "GaN/AlGaN two-dimensional electron gas grown by ammonia-MBE on
MOCVD GaN template", Phys. Status Solidi B, Vol. 234, No. 3, pp. 822-825, December 2002.
687. M. L. Lee, J. K. Sheu, L. S. Yeh, M. S. Tsai, C. J. Kao, C. J. Tun, S. J. Chang and G. C. Chi,
"GaN p-n junction diode formed by Si ion implantation into p-GaN", Solid State Electron., Vol.
46, No. 12, pp. 2179-2183, December 2002..
688. Y. Z. Chiou, Y. K. Su, S. J. Chang, Y. C. Lin, C. S. Chang and C. H. Chen, "InGaN/GaN
MQW P-N junction photodetectors", Solid State Electron., Vol. 46, No. 12, pp. 2227-2229,
December 2002.
689. Y. K. Su, Y. Z. Chiou, C. S. Chang, S. J. Chang, Y. C. Lin and J. F. Chen, "4H-SiC
metal-semiconductor-metal ultraviolet photodetectors with Ni/ITO electrodes", Solid State
Electron., Vol. 46, No. 12, pp. 2237-2240, December 2002.
690. H. Tang, J. B. Webb, P. Coleridge, J. A. Bardwell, C. H. Ko, Y. K. Su and S. J. Chang,
“Scattering lifetimes due to interface roughness with large lateral correlation length in
AlxGa1-xN/GaN two-dimensional electron gas”, Phys. Rev. B, Vol. 66, No. 24, Art. no. 245305,
December 2002.
691. S. J. Chang, W. C. Lai, J. F. Chen, S. C. Chen, B. R. Huang, C. H. Liu and U. H. Liaw, "Be
diffusion in GaN", Mater. Charact., Vol. 49, No. 4, pp. 337-341, November 2002.
692. S. J. Chang, J. S. Lee, J. F. Chen, S. C. Sun, C. H. Liu, U. H. Liaw and B. R. Huang,
"Improvement of electrical and reliability properties of tantalum pentoxide by high density
plasma (HDP) annealing in N2O", IEEE Electron. Dev. Lett., Vol. 23, No. 11, pp. 643-645,
November 2002.
693. J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, M. G. Chen, G. C. Chi, S. J. Chang, Y.
K. Su and C. T. Lee, "Planar GaN n+-p photodetectors formed by Si implants into p-GaN",
Appl. Phys. Lett., Vol. 81, No. 22, pp. 4263-4265, November 2002.
694. B. R. Huang and S. J. Chang, "The electrical conduction mechanism for the polycrystalline
diamond membrane in the voltage range of +-50 V", Mater. Lett., Vol. 56, No. 5, pp. 867-872,
November 2002.
695. C. H. Lee, S. L. Wu, S. J. Chang, A. Miura, S. Koh, Y. Shiraki, "A novel triple -doped SiGe
heterostructure field-effect transistor", Jpn. J. Appl. Phys. Lett., Vol. 41, No. 11A, pp.
L1212-L1214, November 2002.
696. P. W. Chien, S. L. Wu, S. C. Lee, S. J. Chang, H. Miura, S. Koh and Y. Shiraki, "P-type delta
doped SiGe/Si heterostructure field-effect transistors", Electron. Lett., Vol. 38, No. 21, pp.
1289-1291, October 2002.
697. C. H. Ko, Y K. Su, S. J. Chang, W. H. Lan, J. Webb, M. C. Tu and Y. T. Cherng,
"Photo-enhanced chemical wet etching of GaN", Mater. Sci. Eng. B, Vol. 96, pp. 43-47,
October 2002.
698. S. J. Chang, Y. K. Su, T. Yang, C. S. Chang, T. P. Chen and K. H. Huang, "AlGaInP/sapphire
glue bonded light emitting diodes", IEEE J. Quan. Electron., Vol. 38, No. 10, pp. 1390-1394,
October 2002.
43
699. Y. K. Su, J. Zhong and S. J. Chang, "A novel vertical cavity surface emitting laser with
semiconductor/superlattice distributed Bragg reflectors", IEEE Photon. Technol. Lett., Vol. 14,
No. 10, pp. 1388-1390, October 2002.
700. Y. K. Su, S. J. Chang, C. H. Ko, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng and J. Webb,
"InGaN/GaN light emitting diodes with a p-down structure", IEEE Tran. Electron. Dev., Vol.
49, No. 8, pp. 1361-1366, August 2002.
701. W. R. Chen, S. J. Chang, Y. K. Su, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu
and U. H. Liaw, "ZnCdSeTe-based orange light emitting diode", IEEE Photon. Technol. Lett.,
Vol. 14, No. 8, pp. 1061-1063, August 2002.
702. Y. K. Su, C. H. Wu, J. R. Chang, K. M. Wu, H. C. Wang, W. B. Chen, S. J. You and S. J.
Chang, "Well width dependence for novel AlInAsSb/InGaAs double barrier resonant
tunneling diode", Solid State Electron., Vol. 46, pp. 1109-1111, August 2002.
703. Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi. J. K. Sheu, W. C. Lai and J. M. Tsai,
"GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes", IEEE
Sensors Journal, Vol. 2, No. 4, pp. 366-371, July/August 2002.
704. J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, S. J. Chang and G. C. Chi,
"Characterization of Si implants in p-type GaN", IEEE J. Sel. Top. Quan. Electron., Vol. 8, No.
4, pp. 767-772, July/August 2002.
705. S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, J. K. Sheu, T. C. Wen, W. C. Lai, J. F. Chen and J.
M. Tsai, "400-nm InGaN/GaN and InGaN/AlGaN multiquantum well light-emitting diodes",
IEEE J. Sel. Top. Quan. Electron., Vol. 8, No. 4, pp. 744-748, July/August 2002.
706. W. R. Chen, S. J. Chang, Y. K. Su, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu
and U. H. Liaw, "ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by
molecular beam epitaxy", Superlattice Microst., Vol. 32, No. 1, pp. 59-63, July 2002.
707. D. W. Chou, K. W. Lee, J. J. Huang, H. R. Wu, Y. H. Wang, M. P. Houng, S. J. Chang and Y.
K. Su, "AlGaN/GaN metal oxide semiconductor heterostructure field-effect transistor based on
a liquid phase deposited oxide", Jpn. J. Appl. Phys. Lett., Vol. 41, No. 7A, pp. L748-L750,
July 2002.
708. C. H. Chen, S. J. Chang, Y. K. Su, J. K. Sheu, J. F. Chen, C. H. Kuo and Y. C. Lin,
"Nitride-based cascade near white light emitting diodes", IEEE Photon. Technol. Lett., Vol. 14,
No. 7, pp. 908-910, July 2002.
709. K. W. Lee, D. W. Chou, J. J. Huang, H. R. Wu, Y. H. Wang, M. P. Houng, S. J. Chang and Y.
K. Su, "GaN MOSFET with liquid phase deposited oxide", Electron. Lett., Vol. 38, No. 15, pp.
829-830, July 2002.
710. Y. Z. Chiou, Y. K. Su, S. J. Chang, J. F. Chen, C. S. Chang, S. H. Liu, I. C. Lin and C. H.
Chen, "Transparent TiN electrodes in GaN metal-semiconductor-metal ultraviolet
photodetectors", Jpn. J. Appl. Phys., Vol. 41, No. 6A, pp. 3643-3645, June 2002.
711. T. C. Wen, S. J. Chang, L. W. Wu, Y. K. Su, W. C. Lai C. H. Kuo, C. H. Chen, J. K. Sheu and
J. F. Chen, "InGaN/GaN tunnel injection blue light emitting diodes", IEEE Tran. Electron.
Dev., Vol. 49, No. 6, pp. 1093-1095, June 2002.
712. L. W. Wu, S. J. Chang, T. C. Wen, Y. K. Su, W. C. Lai, C. H. Kuo, C. H. Chen and J. K. Sheu,
"Influence of Si-doping on the characteristics of InGaN/GaN multiple quantum well blue light
emitting diodes", IEEE J. Quan. Electron., Vol. 38, No. 5, pp. 446-450, May 2002.
713. C. H. Kuo, S. J. Chang, Y. K. Su, J. F. Chen, L. W. Wu, J. K. Sheu, C. H. Chen and G. C. Chi,
"InGaN/GaN light emitting diodes activated in O2 ambient", IEEE Electron. Dev. Lett., Vol. 23,
No. 5, pp. 240-242, May 2002.
714. C. Y. Su, L. P. Chen, S. J. Chang, B. M. Tseng, D. C. Lin, G. W. Huang, Y. P. Ho, H. Y. Lee, J.
F. Kuan, W. Y. Wen, P. Liou, C. L. Chen, L. Y. Leu, K. A. Wen and C. Y. Chang, "A macro
model of silicon spiral inductor", Solid State Electron., Vol. 46, No. 5, pp. 759-767, May 2002.
715. C. H. Ko, Y K. Su, S. J. Chang, T. M. Kuan, C. I. Chiang, W. H. Lan, W. J. Lin and J. Webb,
44
"A p-down InGaN/GaN MQW LED structure grown by MOVPE", Jpn. J. Appl. Phys., Vol. 41,
No. 4B, pp. 2489-2492, April 2002.
716. J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kuo, L. W. Wu, C. H. Chen, S. J. Chang and Y. K. Su,
"White-light emission from InGaN/GaN multi-quantum well light-emitting diodes with Si and
Zn codoped active layer", IEEE Photon. Technol. Lett., Vol. 14, No. 4, pp. 450-452, April
2002.
717. S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu and U. H. Liaw, "InGaN/GaN
multiquantum well blue and green light emitting diodes", IEEE J. Sel. Top. Quan. Electron.,
Vol. 8, No. 2, pp. 278-283, March/April 2002.
718. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu and J. F. Chen, "High efficient
InGaN/GaN MQW green light emitting diodes with CART and DBR structures", IEEE J. Sel.
Top. Quan. Electron., Vol. 8, No. 2, pp. 284-288, March/April 2002.
719. C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu and U. H. Liaw,
"High brightness green light emitting diode with charge asymmetric resonance tunneling
structure", IEEE Electron. Dev. Lett., Vol. 23, No. 3, pp. 130-132, March 2002.
720. C. H. Ko, S. J. Chang, Y. K. Su, W. H. Lan, J. F. Chen, T. M. Kuan, Y. C. Huang, C. I. Chiang,
J. Webb and W. J. Lin, "On the carrier concentration and Hall mobility in GaN epitaxial
layers", Jpn. J. Appl. Phys. Lett., Vol. 41, No. 3A, pp. L226-L228, March 2002.
721. J. S. Lee, S. C. Sun, S. J. Chang, J. F. Chen, C. H. Liu and U. H. Liaw, "Effects of interfacial
oxide layer for the Ta2O5 capacitor after high temperature annealing", Jpn. J. Appl. Phys., Vol.
41, No. 2A, pp. 690-693, February 2002.
722. J. K. Sheu, C. J. Tun, M. S. Tsai, C. C. Lee, G. C. Chi, S. J. Chang and Y. K. Su, "n+-GaN
formed by Si implantation into p-GaN", J. Appl. Phys., Vol. 91, No. 4, pp. 1845-1848,
February 2002.
723. S. J. Chang, Y. K. Su, W. R. Chen, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu
and U. H. Liaw, "ZnSTeSe metal-semiconductor-metal photodetectors", IEEE Photon. Technol.
Lett., Vol. 14, No. 2, pp. 188-190, February 2002.
724. S. J. Chang, Y. K. Su, W. R. Chen, J. F. Chen, M. H. Chen, F. S. Juang, W. H. Lan, W. J. Lin,
Y. T. Cherng, C. H. Liu and U. H. Liaw, "ZnMgSSe metal-semiconductor-metal visible-blind
photodetectors with transparent indium-tin-oxide contact electrodes", Jpn. J. Appl. Phys. Lett.,
Vol. 41, No. 2A, pp. L115-L117, February 2002.
725. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen and G. C. Chi, "Low
temperature activation of Mg-doped GaN in O2 ambient", Jpn. J. Appl. Phys. Lett., Vol. 41, No.
2A, pp. L112-L114, February 2002.
726. S. J. Chang, J. S. Lee, M. C. Wei, J. F. Chen, C. H. Liu and U. H. Liaw, "Effects of
photo-assisted O2 annealing on the properties of (Ba,Sr)TiO3 thin films", J. Vac. Sci. Technol.,
Vol. 20, No. 1, pp. 107-111, January 2002.
727. C. Y. Su, L. P. Chen, S. J. Chang, G. W. Huang, D. C. Lin, Y. P. Ho, B. M. Tseng, H. Y. Lee, J.
F. Kuan, Y. M. Deng, K. A. Wen and C. Y. Chang, "An automatic macro program for radio
frequency MOSFETs characteristics analysis", Microwave Journal, Vol. 44, No. 10, pp.
99-108, October 2001.
728. J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang and
G. C. Chi, "Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped
In0.3Ga0.7N/GaN short-period superlattice tunneling contact layer", IEEE Electron. Dev. Lett.,
Vol. 22, No. 10, pp. 460-462, October 2001.
729. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu and J. F. Chen,
"GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide
Schottky contacts", IEEE Photon. Technol. Lett., Vol. 13, No. 8, pp. 848-850, August 2001.
730. C. Y. Su, B. M. Tseng, S. J. Chang and L. P. Chen, "Scalable RF MIS varactor model",
Electron. Lett., Vol. 37, No. 12, pp. 760-761, June 2001.
45
731. W. C. Lai, S. J. Chang, M. Yokoyama, J. K. Sheu and J. F. Chen, "InGaN/AlInGaN light
emitting diodes", IEEE Photon. Technol. Lett., Vol. 13, No. 6, pp. 559-561, June 2001.
732. K. S. Ramaiah, Y. K. Su, S. J. Chang, F. S. Juang, K. Ohdaira, Y. Shiraki, H. P. Liu, I. G. Chen
and A. K. Bhatnagar, "Characterization of Cu doped CdSe thin films gown by vacuum
evaporation", J. Crystal Growth, Vol. 224, No. 1-2, pp. 74-82, April 2001.
733. S. J. Chang, Y. K. Su, J. F. Chen, L. F. Wen and B. R. Huang, "Effects of electron effective
mass on the multiquantum barrier structure in AlGaInP laser diodes", IEE Proc. Optoelectron., Vol. 148, No. 2, pp. 117-120, April 2001.
734. Y. K. Su, Y. Z. Chiou, F. S. Juang, S. J. Chang and J. K. Sheu, "GaN and InGaN
metal-semiconductor-metal photodetectors with different Schottky contact metals", Jpn. J.
Appl. Phys., Vol. 40, No. 4B, pp. 2996-2999, April 2001.
735. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu and I. C. Lin, "Vertical high quality
mirror-like facet of GaN-based devices by reactive ion etching", Jpn. J. Appl. Phys., Vol. 40,
No. 4B, pp. 2762-2764, April 2001.
736. C. Y. Su, L. P. Chen, S. J. Chang, B. M. Tseng, D. C. Lin and H. Y. Lee, "BSIM3v3-based
varactor model", Electron. Lett., Vol. 37, No. 8 , pp. 525-527, April 2001.
737. S. J. Chang, W. R. Chen, Y. K. Su, J. F. Chen, W. H. Lan, C. I. Chiang, W. J. Lin, Y. T. Cherng
and C. H. Liu, "Au/AuBe/Cr contact to p-ZnTe", Electron. Lett., Vol. 37, No. 5, pp. 321-322,
March 2001.
738. S. J. Chang, Y. K. Su, T. L. Tsai, C. Y. Chang, C. L. Chiang, C. S. Chang, T. P. Chen and K. H.
Huang, "Microwave treatment to activate Mg in GaN", Appl. Phys. Lett., Vol. 78, No. 3, pp.
312-313, January 2001.
739. C. M. Lin, S. J. Chang, M. Yokoyama, I. N. Lin, J. F. Chen and B. R. Huang, "Field-emission
enhancement of Mo-tip field-emitted arrays fabricated by using a redox method", IEEE
Electron. Dev. Lett., Vol. 21, No. 12, pp. 560-562, December 2000.
740. K. S. Ramaiah, Y. K. Su, S. J. Chang, F. S. Juang and C. H. Chen, "Photoluminescence
characteristics of Mg- and Si-doped GaN thin films grown by MOCVD technique", J. Crystal
Growth, Vol. 220, pp. 405-412, December 2000.
741. J. S. Lee, S. J. Chang, S. C. Sun, S. M. Jang and M. C. Yu, "Electrical properties of thin gate
dielectric grown by rapid thermal oxidation", J. Vac. Sci. Technol., Vol. A18, No. 6, pp.
2986-2991, November/December 2000.
742. W. C. Lai, M. Yokoyama, S. J. Chang, J. D. Guo, C. H. Sheu, T. Y. Chen, W. C. Tsai, J. S.
Tsang, S. H. Chang and S. M. Sze, "Optical and electrical characteristics of CO2 laser treated
Mg-doped GaN film", Jpn. J. Appl. Phys. Lett., Vol. 39, No. 11B, pp. L1138-L1140,
November 2000.
743. P. W. Chien, S. L. Wu, S. J. Chang, Y. P. Wang, H. Miura and Y. Shiraki, "Device linear
improvement using SiGe/Si heterostructure delta-doped-channel field effect transistor", Jpn. J.
Appl. Phys. Lett., Vol. 39, No. 11B, pp. L1149-L1151, November 2000.
744. C. M. Lin, S. J. Chang, M. Yokoyama and I. N. Lin, "Study of thermal stability in diamond
like carbon coated planar electron field emission arrays", J. Vac. Sci. Technol., Vol. 18, No. 5,
pp. 2424-2426, September/October 2000.
745. K. S. Ramaiah, V. S. Raja, A. K. Bhatnagar, F. S. Juang, S. J. Chang and Y. K. Su, "Effects of
annealing and -radiation on the properties of CuInSe2 thin films", Mater. Lett., Vol. 45, pp.
251-261, September 2000.
746. F. S. Juang, S. J. Chang, Y. K. Su, C. C. Cheng and J. K. Sheu, "Ohmic contacts and reactive
ion beam etching for p-type GaN", J. Chinese Institute of Electrical Engineering, Vol. 7, No. 3,
pp. 203-210, August 2000 (EI,
747. C. Y. Su, S. L. Wu, S. J. Chang, and L. P. Chen, "Strained Si1-xGex graded channel PMOSFET
grown by UHVCVD", Thin Solid Films, Vol. 369, No. 1-2, pp. 371-374, July 2000.
748. C. Y. Su, L. P. Chen, S. J. Chang, G. W. Huang, Y. P. Ho, B. M. Tseng, D. C. Lin, H. Y. Lee, J.
46
F. Kuan, Y. M. Deng, C. L. Chen, L. Y. Leu, K. A. Wen and C. Y. Chang, "Coplanar probe pad
design on the noise figures of 0.35 m MOSFETs", Electron. Lett., Vol. 36, No. 15, pp.
1280-1281, July 2000.
749. Y. K. Su, W. R. Chen, S. J. Chang, F. S. Juang, W. H. Lan, A. C. H. Lin and H. Chang, "The
red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection
currents", IEEE Tran. Elec. Dev., Vol. 47, No. 7, pp. 1330-1333, July 2000.
750. K. S. Ramaiah, V. S. Raja, A. K. Bhatnagar, R. D. Tomlinson, R. D. Pilkington, A. E. Hill, S. J.
Chang, Y. K. Su and F. S. Juang, "Optical structural and electrical properties of tin doped
indium oxide thin films prepared by spray-pyrolysis technique", Semicond. Sci. Technol., Vol.
15, No. 7, pp. 676-683, July 2000. (EI,
751. C. Y. Su, S. L. Wu, S. J. Chang and L. P. Chen, "Strained Si1-xGex normal graded channel
P-type metal-oxide-semiconductor field-effect-transistor" Jpn. J. Appl. Phys. Lett., Vol. 39, No.
6B, pp. L279-L581, June 2000.
752. W. R. Chen, S. J. Chang, Y. K. Su, W. H. Lan, A. C. H. Lin and H. Chang, "Reactive Ion
Etching of ZnSe, ZnSSe, ZnCdSSe and ZnMgSSe by CH4/H2/Ar and CH4/Ar", Jpn. J. Appl.
Phys., Vol. 39, No. 6A, pp. 3308-3314, June 2000.
753. S. J. Chang, Y. K. Su, F. S. Juang, C. T. Lin, C. D. Chiang and Y. T. Cherng, "Photo-enhanced
native oxidation process for Hg0.8Cd0.2Te photoconductors", IEEE J. Quantum Electron., Vol.
36, No. 5, pp. 583-589, May 2000.
754. F. S. Juang, Y. K. Su, S. M. Chang, S. J. Chang, C. D. Chiang and Y. T. Cherng, "Analysis of
the dark current of focal-plane-array Hg1-xCdxTe diode", Mater. Chem. Phys., Vol. 64, No. 2,
pp. 131-136, April 2000.
755. C. M. Lin, S. J. Chang, M. Yokoyama and I. N. Lin, "Effects of redox treatment on
diamond-like carbon coated Mo substrates", Jpn. J. Appl. Phys. Lett., Vol. 39, No. 2A, pp.
L76-L78, February 2000.
756. S. L. Wu and S. J. Chang, "Si field-effect transistor with doping dipole in buffer layer", Appl.
Phys. Lett., Vol. 75, No. 18, pp. 2848-2850, November 1999. , EI
757. S. J. Chang, W. R. Chen, Y. K. Su, R. C. Tu, W. H. Lan and H. Chang, "Ohmic contact to
p-ZnSe and p-ZnMgSSe", Electron. Lett., Vol. 35, No. 15, pp. 1280-1281, July 1999.
758. S. L. Wu and S. J. Chang, "High performance delta-modulation-doped Si/SiGe
heterostructure FET's grown by MBE", Solid State Electron., Vol. 43, No. 7, pp. 1313-1316,
July 1999.
759. C. M. Lin, S. J. Chang, M. Yokoyama, I. N. Lin, F. Y. Chuang, C. H. Tsai and W. C. Wang,
"Enhancement of electron emission characteristics of platform-shaped Mo emitters by
diamond-like carbon coatings", Jpn. J. Appl. Phys., Vol. 38, No. 6A, pp. 3700-3704, June
1999.
760. S. J. Chang, Y. Z. Juang, D. K. Nayak and Y. Shiraki, "Reactive ion etching of Si SiGe in
CF4/Ar and Cl2/BCl3/Ar discharges", Mater. Chem. Phys., Vol. 60, No. 1, pp. 22-27, July 1999.
761. C. M. Lin, S. J. Chang, M. Yokoyama, F. Y. Chuang, W. C. Wang and I. N. Lin,
"Enhancement on diamondlike carbon coated planar electron field emission array using
Au-precoating", Appl. Surf. Sci., Vol. 142, No. 1-4, pp. 499-503, April 1999.
762. F. S. Juang, Y. K. Su, S. J. Chang, S. M. Chang, F. S. Shu, C. D. Chiang, Y. T. Cherng and T. P.
Sun, "Dark currents in HgCdTe photodiodes passivated with ZnS/Cds", J. Electrochem. Soc.,
Vol. 146, No. 4: pp. 1540-1545, April 1999.
763. C. M. Lin, S. J. Chang, M. Yokoyama, F. Y. Chuang,C. H. Tsai, W. C. Wang and I. N. Lin,
"Electron field emission characteristics of planar field emission array with diamondlike carbon
electron emitters", Jpn. J. Appl. Phys., Vol. 38, No. 2A, pp. 890-893, February 1999.
764. S. L. Wu, T. T. Han, Y. P. Wang and S. J. Chang, "An inverted boron d-doped high hole
mobility transistor (HHMT) with a Si0.4Ge0.6 quantum well", J. Appl. Phys. Lett., Vol. 37, No.
11A, pp. L1290-L1292, November 1998.
47
765. J. K. Sheu, Y. K. Su, S. J. Chang, G. C. Chi, K. B. Lin, C. C. Liu and C. C. Chiou, "Electrical
derivative characteristics of ion implanted AlGaInP/GaInP multi-quantum well lasers", Solid
State Electron., Vol. 42, No. 10, pp. 1867-1869, October 1998.
766. J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou and G. C. Chi, "Investigation of wafer-bonded
(AlxGa1-x)0.5In0.5P/GaP light-emitting diodes", IEE Proc. - Optoelectron., Vol. 145, No. 4, pp.
248-252, August 1998.
767. Y. Z. Juang, Y. K. Su, S. J. Chang, D. F. Huang and C. S. Chang "Reactive ion etching for
AlGaInP/GaInP laser structure", J. Vac. Sci. Technol., Vol. A16, No. 4, pp. 2031-2036,
July/August 1998.
768. S. J. Chang and C. S. Chang, "650nm AlGaInP/GaInP compressively strained multi-quantum
well light-emitting diodes", Jpn. J. App. Phys. Lett., Vol. 37, No. 6A, pp. L653-L655, June
1998.
769. S. J. Chang and C. S. Chang, "AlGaInP compressively strained multi-quantum well
light-emitting diodes for polymer fiber applications", IEEE Photon. Techol. Lett., Vol. 10, No.
6, pp. 772-774, June 1998.
770. S. J. Chang and C. S. Chang, "642nm AlGaInP laser diodes with a tensile strain barrier
cladding layer", IEEE Photon. Techol. Lett., Vol. 10, No. 5, pp. 651-653, May 1998.
771. Y. K. Su, W. L. Li, S. J. Chang, C. S. Chang and C. Y. Tsai, "High performance 670nm
AlGaInP/GaInP visible strained quantum well lasers", IEEE Tran. Electron. Dev., Vol. 45, No.
4, pp. 763-767, April 1998.
772. L. P. Chen, Y. C. Chan, S. J. Chang, G. W. Huang and C. Y. Chang, "Direct oxidation of
Si1-xGex layers using vacuum-ultra-violet light radiation in oxygen", Jpn. J. Appl. Phys. Lett.,
Vol. 37, No. 2A, pp. L122-L124, February 1998.
773. S. J. Chang, D. K. Nayak and Y. Shiraki, "1.54m electroluminescence from erbium doped
SiGe light emitting diodes", J. Appl. Phys., Vol. 83, No. 3, pp. 1426-1428, February 1998.
774. R. C. Tu, Y. K. Su, D. Y. Yin, C. F. Li, Y. S. Huang, W. H. Lan, S. L. Tu, S. J. Chang, S. C.
Chou and W. C. Chou, "Contactless electroluminescence study of strained Zn0.79Cd0.21Se/ZnSe
double quantum wells", J. Appl. Phys., Vol. 83, No. 2, pp. 1043-1048, January 1998.
775. C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen, "High
brightness AlGaInP 573nm light-emitting diode with a chirped multi-quantum barrier", IEEE J.
Quan. Electon., Vol. 34, No. 1, pp. 77-83, January 1998.
776. W. L. Li, Y. K. Su, S. J. Chang, C. S. Chang and C. Y. Tsai, "Design of AlGaInP visible lasers
with a low vertical divergence angle", Solid State Electron., Vol. 42, No. 1, pp. 87-90, January
1998.
777. S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen,
"AlGaInP multi-quantum well light-emitting diodes", IEE Proceeding – Optoelectron., Vol.
144, No. 6, pp. 405-409, December 1997.
778. W. L. Li, Y. K. Su, S. J. Chang and C. Y. Tsai, "A novel waveguide structure to reduce beam
dispersion and threshold current in GaInP/AlGaInP visible quantum well lasers", Appl. Phys.
Lett., Vol. 71, No. 16, pp. 2245-2247, October 1997.
779. S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen,
"AlGaInP yellow-green light-emitting diodes with a tensile strain barrier cladding layer",
IEEE Photon. Techol. Lett., Vol. 9, No. 9, pp. 1191-1201, September 1997.
780. C. T. Lin, Y. K. Su, S. J. Chang, H. T. Huang, S. M. Chang and T. P. Sun, "Effects of
passivation and extraction trap density on the 1/f noise of HgCdTe photoconductive detector",
IEEE Photon. Techol. Lett., Vol. 9, No. 2, pp. 232-234, February 1997.
781. S. J. Chang, C. S. Chang, Y. K. Su, P. T. Chang, Y. R. Wu, K. H. Huang and T. P. Chen,
"Chirped GaAs/AlAs distributed Bragg reflectors for high brightness yellow-green
light-emitting diodes", IEEE Photon. Techol. Lett., Vol. 9, No. 2, pp. 182-184, February 1997.
782. S. J. Chang, Y. C. Yin, C. M. Lin and A. Y. G. Fuh, "Relaxation time of polymer ball type
48
PDLC films", Liq. Cryst., Vol. 21, No. 5, pp. 707-711, November 1996.
783. S. J. Chang, J. K. Sheu, Y. K. Su, M. J. Jou and G. C. Chi, "AlGaInP/GaP light emitting
diodes fabricated by direct bonding technology", Jpn. J. Appl. Phys., Vol. 35, No. 8, pp.
4199-4202, August 1996.
784. S. J. Chang, C. M. Lin and A. Y. G. Fuh, "Studies of polymer ball type polymer dispersed
liquid crystal films", Liq. Cryst., Vol. 21, No. 1, pp. 19-23, July 1996.
785. C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, G. S. Chen, T. P. Sun and J. J. Luo, "Electrical
properties of the stacked ZnS/photo-enhanced-native-oxide passivation for HgCdTe
photodiodes", IEEE Photon. Techol. Lett., Vol. 8, No. 5, pp. 676-678, May 1996.
786. S. J. Chang, C. M. Lin and A. Y. G. Fuh, "Effects of photoinitiator on the properties of
polymer ball type PDLC films", Jpn. J. Appl. Phys., Vol. 35, No. 4A, pp. 2180-2183, April
1996.
787. Y. K. Su, C. T. Lin, H. T. Huang, S. J. Chang, T. P. Sun, G. S. Chen and J. J. Luo, "The
electrical properties of high quality stacked CdTe/photo-enhanced-native-oxide for HgCdTe
passivation", Jpn. J. Appl. Phys., Vol. 35, No. 2B, pp. 1165-1167, February 1996.
788. C. T. Lin, S. J. Chang, D. K. Nayak and Y. Shiraki, "The properties of SiO2 films using direct
photo chemical vapor deposition on strained SiGe layer", Appl. Surface Sci., Vol. 92, pp.
193-197, February 1996.
789. S. J. Chang, "Neodymium-doped GaAs light emitting diodes", J. Appl. Phys., Vol. 78, No. 6,
pp. 4279-4281, September 1995.
790. S. J. Chang, D. K. Nayak and Y. Shiraki, "Photoluminescence of erbium implanted in SiGe",
Jpn. J. Appl. Phys., Vol. 34, No.10, pp. 5633-5636, October 1995.
791. A. Y. G. Fuh, C. Y. Huang, M. S. Tsai, G. L. Lin and S. J. Chang, "Studies of polymer
stabilized cholesteric liquid crystal texture films", Chinese J. Phys., Vol. 33, No. 3, pp.
291-302, June 1995.
792. H. Kuan, Y. K. Su, S. J. Chang and W. J. Tzou, "Photoreflectance study of InP and GaAs by
MOCVD using tertiarybutylphosphine and tertiarybutylarsine source", Jpn. J. Appl. Phys., Vol.
34, No. 4A, pp. 1831-1832, April 1995.
793. C. T. Lin, S. J. Chang, D. K. Nayak and Y. Shiraki, "Deposition of SiO 2 layer on strained
SiGe substrate", Jpn. J. Appl. Phys., Vol. 34, No. 1, pp. 72-74, January 1995.
794. S. J. Chang and S. Chiao, "Effects of matrix impedance on the properties of polymer
dispersed liquid crystal cells", Jpn. J. Appl. Phys., Vol. 34, No. 8A, pp, 4074-4078, August
1995.
795. S. J. Chang, Y. K. Su and Y. P. Shei, "High quality ZnO thin films on InP substrates prepared
by RF magnetron sputtering (I) - Material study", J. Vac. Sci. Technol., Vol. A13, No. 2, pp.
381-384, March 1995.
796. S. J. Chang, Y. K. Su and Y. P. Shei, "High quality ZnO thin films on InP substrates prepared
by RF magnetron sputtering (II) - Surface acoustic wave device fabrication", J. Vac. Sci.
Technol., Vol. A13, No. 2, pp. 385-388, March 1995.
797. S. J. Chang, S. Chiao, W. J. Lai, C. M. Lin and A. Y. G. Fuh, "Polymer dispersed liquid
crystal display device for projection high definition television application", Macromolecular
Symposia, Vol. 84, No. 1, pp. 159-163, July 1994.
798. S. J. Chang and K. Takahei, "Studies of GaAs:Er impact excited electroluminescence
devices", Appl. Phys. Lett., Vol. 65, No. 4, pp. 433-435, July 1994.
799. J. D. Lin, Y. K. Su, S. J. Chang, M. Yokoyama and F. Y. Juang, "Passivation with SiO2 on
HgCdTe by direct photo-CVD", J. Vac. Sci. Technol., Vol. A12, No. 1, pp. 7-11, January
1994.
800. S. J. Chang and K. Takahei, "Optical properties of the dominant Nd center in GaP", J. Appl.
Phys., Vol. 73, No. 2, pp. 943- 947, January 1993.
49
801. J. Nakata, S. J. Chang and K. Takahei, "Direct evidence of Er atoms occupying an interstitial
site in metalorganic chemical vapor deposition-grown GaAs:Er", Appl. Phys. Lett., Vol. 61,
No. 22, pp. 2665-2667, November 1992.
802. A. Taguchi, S. J. Chang and K. Takahei, "Direct verification of energy back transfer from Yb
4f-shell to InP host", Appl. Phys. Lett., Vo. 60, No. 8, pp. 965-967, February 1992.
803. S. J. Chang, H. Nakagome and K. Takahei, "Luminescence lifetime studies of Nd-doped GaP
and GaAs", J. Lumin., Vol. 52, No. 5-6, pp. 251-257, June 1992.
804. P. M. Adams, R. C. Bowman, Jr., C. C. Ahn, S. J. Chang, V. Arbet-Engels, M. A. Kallel and
K. L. Wang, "Structure characterization of GemSin strained layer superlattices", J. Appl. Phys.,
Vol. 71, No. 9, pp. 4305-4313, May 1992.
805. S. J. Chang, H. Nakagome and K, Takahei, "Observation of luminescence from a highly
concentrated Nd center in GaP by direct optical excitation and comparison with Nd centers
excited under host excitation", Jpn. J. Appl. Phys. 30 (1991) 3788
806. S. J. Chang, H. Nakagome and K. Takahei, "Luminescence intensity and lifetime dependence
on temperature for Nd-doped GaP and GaAs", Appl. Phys. Lett., Vol. 58, No. 21, pp.
2390-2392, May 1991.
807. A. Bindal, K. L. Wang, S. J. Chang and M. A. Kallel, "Major implantation induced defects in
conventional and rapid thermal annealed, silicon implanted LEC-grown GaAs", J.
Electrochem. Soc., Vol. 138, No. 1, pp. 222-226, January 1991.
808. S. J. Chang, V. Arbet, K. L. Wang, R. C. Bowman, Jr., P. M. Adams, D. Nayak and J. C. S.
Woo, "Studies of interdiffusion in GemSin strained layer superlattices", J. Electron. Mater.,
Vol. 19, pp. 125-130 1990.
809. V. Arbet, S. J. Chang and K. L. Wang, "Investigation of GemSin strained monolayer
superlattices by Rheed, Raman and X-ray technology", Thin Solid Films, Vol. 183, pp. 57-63.
December 1989.
810. S. J. Chang, C. F. Huang, M. A. Kallel, K. L. Wang, R. C. Bowman, Jr. and P. M. Adams,
"Study of ultra-thin Ge/Si strain layer superlattices", J. Crystal Growth, Vol. 95, No. 1-4, pp.
451-454, February 1989.
811. S. J. Chang, K. L. Wang, R. C. Bowman, Jr. and P. M. Adams, "Interdiffusion in a
symmetrically strained Ge/Si superlattice", Appl. Phys. Lett., Vol. 54, No. 13, pp. 1253-1255,
March 1989.
812. A. Bindal, K. L. Wang, S. J. Chang, M. A. Kallel and P. K. Chu, "A process simulation model
for silicon ion implantation in undoped LEC-grown GaAs", J. Electrochem. Soc., Vol. 136,
No. 8, pp. 2414-2420, August 1989.
813. A, Bindal, K. L. Wang, S. J. Chang, M. A. Kallel, O. M. Stafsudd, "On the nature of silicon
activation efficiency in LEC-grown GaAs by photoluminescence", J. Appl. Phys., Vol. 65, No.
3, pp. 1246-1252, February 1989.
814. S. J. Chang, C. F. Huang, M. A. Kallel, K. L. Wang, R. C. Bowman, Jr. and P. M. Adams,
"Growth and characterization of Ge/Si strained layer superlattices", Appl. Phys. Lett., Vol. 53,
No. 19. pp. 1835-1837, November 1988.
815. S. J. Chang, M. A. Kallel, K. L. Wang, R. C. Bowman, Jr. and P. Chow, "Study of
MBE-grown GexSi1-x/Si layers by Raman scattering", J. Appl. Phys., Vol. 64, No. 7, pp.
3634-3636, October 1988.
B. International Conference Invited and Plenary Talks
1. S. J. Chang, "Ion implantation technology for the fabrication of GaN-based LEDs", 35th
Progress in Electromagnetic Research Symposium 2014 (PIERS2014), in Guangzhou, China
2. S. J. Chang, "Growth and device applications for CuO nanowires", 2014 Collective Conference
on Materials Research (CCMR2014), in Incheon, Korea
3. S. J. Chang, "GaN-based LEDs fabricated by ion implantation technology", 2014 IEEE 12th
50
International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2014), in
Guilin, China
4. S. J. Chang, "β-Ga2O3 solar-blind photodetectors prepared on GaN/sapphire template", 2013
Asia-Pacific Workshop on Widegap Semiconductor (APWS2013), in Tamsui, New Taipei City,
Taiwan
5. S. J. Chang, "GaN-based LEDs with high light extraction efficiency", Asia Communications
and Photonics Conference 2012 (ACP2012), in Guangzhou, China
6. S. J. Chang, "Lasers used for the fabrication of LED chips", LED and Green Lighting Seminar
2012, in Seoul, Korea
7. S. J. Chang, "GaN-based LEDs with high light extraction efficiency", International conference
on Electronic Materials and Nanotechnology for Green Environment 2012 (ENGE2012), in Jeju,
Korea
8. S. J. Chang, "Enhanced light extraction of GaN-based LEDs", 2012 International Conference
on Optoelectronics and Microelectronics (2012 ICOM), in Changchun, China
9. S. J. Chang, "GaN-based LEDs with air voids prepared by laser scribing and chemical etching",
SPIE Photonics West 2012, in San Francisco, USA
10. S. J. Chang, "Lasers used for the fabrication of LED chips", IEEE 2011 Academic Symposium
on Optoelectronics & Microelectronics Technology (ASOMT 2011), in Harbin, China
11. S. J. Chang, "Growth of ZnSe nanowires and ZnSe-based mulitquantum disks prepared by
molecular beam epitaxy", 4th IEEE International NanoElectronics Conference 2011 (INEC
2011), in Taoyuan, Taiwan
12. S. J. Chang, "GaN-based LEDs with air voids prepared by laser scribing and chemical etching",
International Electron Devices and Materials Symposium 2011 (IEDMS 2011), in Taipei,
Taiwan
13. S. J. Chang, "A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin
film", 2010 International Conference on Optics and Photonics in Taiwan (OPT2010), in Tainan,
Taiwan
14. S. J. Chang, "Solar-blind β-Ga2O3 nanowire photodetectors", IEEE 2010 Academic Symposium
on Optoelectronics & Microelectronics Technology (ASOMT2010), in Harbin, China
15. S. J. Chang, "ZnO nanowires: Materials growth and device applications", IUPAC 5th
International Symposium on Novel Materials and Synthesis (NMS-V 2009) in Shanghai, China
16. S. J. Chang, "The challenge of commercialized crystalline Si solar cell", 2nd IEEE Electron
System-Integration Technology Conference (ESTC 2008), in Greenwich, London, UK
17. S. J. Chang, "GaN-based light emitting diodes with micro/nano structure", 8th Emerging
Information and Technology Conference (EITC 2008), in Tainan, Taiwan
18. S. J. Chang, "High-brightness GaN-based light emitting diodes", 2nd Advanced Display and
Optoelectronics Technology Workshop 2008 (ADOT 2008), in Daegu, Korea
19. S. J. Chang, "GaN-based devices prepared on Si substrates", IEEE 2008 Academic Symposium
on Optoelectronics & Microelectronics Technology (ASOMT2008), in Harbin, China
20. S. J. Chang, "ESD reliability of nitride-based LEDs", The 5th International Workshop on
Industrial Technologies for Optoelectronic Semiconductors (IWITOS’07), in Seoul, Korea
21. S. J. Chang, "ZnO nanowire-based gas sensors", 7th Emerging Information and Technology
Conference (EITC 2007), in Princeton, USA
22. S. J. Chang, "GaN-based metal-oxide-semiconductor heterostructure field effect transistors
(MOSHFETs)", 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005), in
Awajishima Hyogo, Japan
23. S. J. Chang, "Growth of vertical ZnO-based nanowires on glass substrate", 2nd Asia-Pacific
Workshop on Widegap Semiconductors (APWS 2007), in Hsinchu, Taiwan
24. S. J. Chang, "InGaN/GaN MQW LEDs with ITO-based transparent upper contact layers", 5th
International Symposium on Blue Lasers and LEDs (ISBLLED2004), in Gyeongju, Korea
51
25. S. J. Chang and S. L. Wu, "Si1-xGex channel field effect transistors usingdoping technique",
First International Workshop on New Group IV (Si-Ge-C) Semiconductors 2001, in Kofu, Japan,
2001
26. S. J. Chang, "Strained Si1-xGex graded channel PMOSFET grown by UHV/CVD",
International Joint Conf. on Silicon Epitaxy and Heterostructure (IJC) 1999, in Zao, Japan
C. Patents:
1. R. Y. Yang, H. Y. Chang and S. J. Chang, "Photochemical solar cells with thermal isolation
capability", ROC patent No. I 430460 (2014)
2. Y. K. Su, S. J. Chang, Y. Z. Chiou, C. K. Wang and T. K. Lin, "Photodetector and method for
manufacturing the same", ROC patent No. 094111075 (2007)
3. Y. H. Wang, M. P. Hong, Y. K. Su, S. J. Chang, H. R. Wu and J. Y. Wu, "Fabrication method
for GaN MOSFETs", ROC patent No. 169680 (2003)
4. Y. K. Su, C. H. Chen, S. J. Chang and J. K. Sheu, "Structure of GaN MSM UV photodetector
and its fabrication method", ROC patent No. 169681 (2002)
5. F. S. Juang, Y. K. Su and S. J. Chang, "A modified suceptor structure for epitaxial wafers",
ROC patent No. 186781 (2002)
6. S. J. Chang, Y. K. Su and W. R. Chen, "Ohmic contact structure of II-VI semiconductor and
its fabrication process", US patent No. 6469319B1 (2002)
7. F. S. Juang, Y. K. Su and S. J. Chang, "A modified water cooled gas nozzle", ROC patent No.
180792 (2002)
8. Y. K. Su, C. T. Lin, S. J. Chang, H. T. Huang, S. M. Chang and T. P. Sun, "Low noise HgCdTe
FIR photodetector and its fabrication method", ROC patent No. 120926 (2001)
9. Y. K. Su, S. J. Chang and W. R. Chen, "Ohmic contact structure of II-VI semiconductor and
its fabrication method", ROC patent No. 132585 (2001)
10. Y. K. Su, S. M. Chen, S. J. Chang and C. L. Lin, "Fabrication of InAs and GaSb related
photo-detectors, laser diodes and NDR devices by MOCVD, ROC patent No. 104113 (1999)
11. Y. K. Su, W. L. Li, S. J. Chang and C. Y. Tsai, "Design of passive waveguide for minimization
of transverse beam dispersion in GaInP/AlGaInP visible quantum well lasers", ROC patent No.
101681 (1999)
12. Y. K. Su, W. L. Li, S. J. Chang and C. Y. Tsai, "Red semiconductor laser of low beam
divergence", US patent No. 5923689 (1999)
13. Y. K. Su, C. Y. Tsai and S. J. Chang, "A new high efficiency NIP GaInP solar cell", US patent
No. 5911839 (1999)
14. C. Y. Tsai, Y. K. Su and S. J. Chang, "A new high efficiency NIP GaInP solar cell", ROC
patent No. 130666 (1998)
15. A. Taguchi, K. Takahei and S. J. Chang, "Quantum well structure", Japanese Patent No.
H3-194770 (1991)
16. K. Takahei, H. Nakagome, A. Taguchi and S. J. Chang, "Crystals with impurities and their
manufacturing methods", Japanese Patent No. H2-288659 (1990)
52