PUBLICATION LIST
(A) SCI paper (*corresponding author)
1. C. F. Shih*, C. Y. Hsiao, B. C. Chen, Y. C. Hsiao, and C. C. Leu* “Constraint
annealing of HfO2 films on silicon substrate: Suppression of Si outward emission”, J.
Am. Ceram. Soc. (2013) (accepted).
2. K. T. Hung, H. T. Wu, S. W. Fu, H. J. Chen, C. Y. Hsiao, and C. F. Shih*, “Improving
Efficiency of Organic Solar Cells by Preparing Aluminum-Doped Zinc Oxide Films
by Ion Beam-Assisted Sputtering”, Org. Electron. 14, 182-186 (2013)
3. C. Y. Hsiao, J. C. Wu, C. F. Shih*, “Epitaxy of Zn2TiO4 (111) thin films on GaN
(001)”, Mater. Res. Bull. 48 [3] 1316–1320 (2013)
4. C. Y. Hsiao, W. M. Li, K. S. Tung, C. F. Shih*, W. D. Hsu, ”Synthesis and application
of magnesium oxide nanospheres with high surface area”, Mater. Res. Bull. 47 [11],
3912–3915 (2012).
5. C. Y. Hsiao, J. C. Wu, H. T. Wu, and C. F. Shih*, “Composite Mg2TiO4(111)/MgO
(111) Gate Oxide on GaN (001)”, J. Am. Ceram. Soc. 95 [1], 45-48 (2012).
6. C. F. Shih*, K. T. Hung, H. T. Wu, S. W. Fu, H. J. Chen, C. Y. Hsiao, “In situ
monitoring of photovoltaic and transport properties of organic solar cells during
thermal annealing”, Org. Electron. 13 [3],373-376 (2012).
7. C. F. Shih*, K. T. Hung, H. T. Wu, S. W. Fu, H. J. Chen, and C. Y. Hsiao, “In situ
monitoring of photovoltaic and transport properties of organic solar cells during
thermal annealing”, Org. Electron., 13, 373-376 (2012).
8. C. Y. Hsiao, C. F. Shih,* K. W. Su, H. J. Chen, and S. W. Fu, “Self-assembled Si/SiO2
superlattice in Si-rich oxide films”, Appl. Phys. Lett. 99, 053115 (2011).
9. C. F. Shih*, K. T. Hong, C.Y. Hsiao, K.T. Huang, S.H. Chen, “Potassium
incorporation at CuPc/C60 interface for solar cell application”, Appl. Phys. Lett. 98,
113307 (2011).
10. C. Y. Hsiao, C. F. Shih*, C. H. Chien, C. L. Huang, “Textured magnesium titanate as
gate Oxide for GaN-based MOS capacitor”, J. Am. Ceram. Soc. 94 [4], 1005-1007
(2011).
11. K. T. Hung, K. T. Huang, C. Y. Hsiao, and C. F. Shih*, “Improving efficiency
ofpentacene/C60 based solar cells with mixed Interlayers”, Thin Solid Film. 519, [15],
5270-3 (2011).
12. C. Y. Hsiao, C. F. Shih*, S. H. Chen, W. T. Jiang, “Comparison of silicon nanocrystals
embedded slicon oxide films by sputtering and PECVD”, Thin Solid Film. 519, [15],
5086-9 (2011).
13. C. Y. Hsiao, C. F. Shih*, C. H. Chien, C. L. Huang, “MgTiO3 (003) thin film
deposited on sapphire (0001) by sputtering”, J. Am. Ceram. Soc. 94 [2], 363-3 (2011).
14. C. F. Shih*, W. M. Li, W. D. Hsu and K. S. Tung “Low-loss magnesium titanate at
microwave frequencies”, J. Am. Ceram. Soc. 93 [9] 2448–2451 (2010).
15. C. F. Shih*, K. T. Hung, J. W. Wu, K. T. Huang, and S. H. Wu, “Improving efficiency
of poly(3-hexylthiophene):1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61-based
1/4
organic solar cells by heat-treatment under hydrostatic pressure”, Jpn. J. Appl. Phys.
49, 040204 (2010).
16. T. W. Wang, N. C. Chen*, W. C. Lien, M. C. Wu, C. F. Shih, “Violet light-emitting
diodes grown on crack-free AlGaN templates”, J. Vac. Sci. Technol. B 27, 1881
(2009).
17. C. F. Shih*, W. M. Li, M. M. Lin, C. Y. Hsiao, K. T. Hung, “Low-temperature
sintered Zn2TiO4:TiO2 with near-zero temperature coefficient of resonant frequency at
microwave frequency”, J. Alloy. Compd., 485, pp. 408 (2009).
18. C. F. Shih*, K. T. Hung, J. W. Wu, C. Y. Hsiao, and W. M. Li, “Efficiency
improvement
of
blended
poly(3-hexylthiophene)
and
1-(3-methoxycarbonyl)-propyl-1-phenyl-(6,6)C61 solar cells by nanoimprinting”,
Appl. Phys. Lett. 94, 143505 (2009).
19. C. F. Shih*, K. T. Hung, S. C. Shu, W. M. Li, “Investigations of GaN
metal-oxide-semiconductor capacitors with sputtered HfO2 gate dielectrics”, J. Alloy.
Compd. 480, 541 (2009).
20. C. F. Shih*, W. M. Li, S. C. Shu, C. Y. Hsiao, and K. T. Hung, “Electrical properties
of Al/HfO2/n-GaN prepared by reactive sputtering”, Jpn. J. Appl. Phys. 48, 020224,
(2009).
21. C. H. Shen, C. L. Huang*, C. F. Shih, C. M. Huang, “The effect of Ca0.61Nd0.26TiO3
addition on the microwave dielectric properties of (Mg0.95Ni0.05)TiO3 ceramics”, J.
Alloy. Compd. 475, 391 (2009).
22. C. H. Shen, C. L. Huang*, C. F. Shih, C. M. Huang, “A novel
temperature-compensated
microwave
dielectric
(1-x)(Mg0.95Ni0.05)TiO3-xCa0.6La0.8/3TiO3 ceramics system”, Int. J. Appl. Ceram.
Technol. (2009). Accepted.
23. C. H. Shen, C. L. Huang, C. F. Shih, C. M. Huang, “Dielectric properties of
Mg0.95Ni0.05TiO3” ceramic modified by Nd0.5Na0.5TiO3 at microwave frequencies”,
Curr. Appl. Phys. 9, 1042-1045 (2009).
24. C. F. Shih*, W. M. Li, M. M. Lin, and K. T. Hung, “Zinc Titanates Sintered from ZnO
and TiO2 Nanowires Prepared by Hydrothermal Process”, J. Electrochem. Soc. 156,
E03 (2009). [NSC 96-2221-E-006-288-MY2] This paper was also selected for
publication by Virtual Journal of Nanoscale Science & Technology, vol. 18, iss. 20.
25. T. W. Wang, N.C. Chen*, W. C. Lien, M. C. Wu, C. F. Shih, “Effects of the GaN and
AIN nucleation layers on the crack-free AlGaN templates” J. Appl. Phys. 104 ,
063104 (2008).
26. C. F. Shih*, W. M. Li, M. M. Lin, K. T. Hong, C. Y. Hsiao, and C. L. Lee, “Sintering
of ZnO and TiO2 nanostructures”, Electrochem. Solid State Lett. 11, K105 (2008).
27. C. F Shih*, N. C. Chen and C. Y. Tseng, “Photoelectron Spectroscopic Investigation
of InN and InN/GaN Heterostructures”, Thin Solid Films, 516, 5016 (2008).
28. C. H. Hsu*, C. F. Shih, C. C. Yu, H. H. Tung, and M. H. Chung, “Low temperature
sintering
and
microwave
dielectric
properties
of
0.6Ba(Co1/3Nb2/3)O3–0.4Ba(Ni1/3Nb2/3)O3 ceramics using copper additions”, J. Alloy.
Compd. 461, 355 (2008).
2/4
29. C. L. Huang*, J. J. Wang, B. J. Li, and C. F. Shih, “Dielectric properties of
(1-x)(Mg0.95Zn0.05)TiO3-x(Na0.5Nd0.5)TiO3
ceramic
system
at
microwave
frequencies”, Mater. Lett. 62, 2516 (2008).
30. G.. M. Wu*, C. W. Tsai, C. F. Shih, N. C. Chen and W. H. Feng “GaN/Si(111) epilayer
based on low temperature AlN and AlGaN/GaN supperlattice for light emitting
diodes”, Nanoscience and Technology, Pts 1 and 2, 587 (2007).
31. G. W. Shu, P. F. Wu, M. H. Lo, and J. L. Shen, T. Y. Lin, H. J. Chang and Y. F. Chen*,
C. F. Shih, C. A. Chang and N. C. Chen, “Concentration dependence of carrier
localization in InN epilayers”, Appl. Phys. Lett. 89, 131913 (2006).
32. A. P. Chiu, N. C. Chen*, P. H. Chang, and C. F. Shih “Crack-free AlGaN/GaN Bragg
mirrors grown on Si (111) substrates by metalorganic vapor phase epitaxy”, Phys. Stat.
Sol. (c), 3, 2014 (2006).
33. K. T. Wu, P. H. Chang, S. T. Lien, N. C. Chen, C. A. Chang, C. F. Shih, W. C. Lien, Y.
H. Wu, S. C. Chen, Y. H. Chang, and C. T. Liang “Growth and characterization of
GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates”, Phys.
E 32, 566 (2006).
34. N. C. Chen, W. C. Lien, C. F. Shih, P. H. Chang, T. W. Wang, and M. C. Wu, “Nitride
light-emitting diodes grown on Si (111) using a TiN template”, Appl. Phys. Lett. 88,
191110 (2006).
35. C. A. Chang, S. T. Lien, C. H. Liu, C. F. Shih, N. C. Chen, P. H. Chang, H. C. Peng, T.
Y. Tang, W. C. Lien, Y. H. Wu, K. T. Wu, J. W. Chen, C. T. Liang, Y. F. Chen, T. U. Lu,
and T. Y. LIN, “Effect of Buffer Layers on Electrical, Optical and Structural Properties
of AlGaN/GaN Heterostructures Grown on Si”, Jpn. J. Appl. Phys. 45, 2516 (2006).
36. C. H. Hou, C. C. Chen, B. J. Pong, M. H. Li, G. C. Chi, N. C. Chen, C. F. Shih, and P.
H. Chang “GaN-based stacked micro-optics system”, Appl. Optics 45, 2396 (2006).
37. W. S. Su, C. W. Lu, Y. F. Chen, T. Y. Lin, E. H. Lin, C. A. Chang, N. C. Chen, P. H.
Chang, C. F. Shih and K. S. Liu, “Light induced electrostatic force spectroscopy:
Application to local electronic transitions in InN epifilms”, J. Appl. Phys. 99, 053518
(2006).
38. H. Y. Lin, Y. F. Chen, T.Y. Lin, C. F. Shih, K.S. Liu, and N.C. Chen, “Direct evidence
of compositional pulling effect in AlxGa1-xN epilayers”, J. Cryst. Growth, 290,
225-228 (2006).
39. P. H. Chang, N. C. Chen, Y. N. Wang, C. F. Shih, M. H. Wu, T. H. Yang, Y. H. Tzou,
and S. J. Yang, “Light-emitting diodes with nickel substrates fabricated by
electroplating”, J. Vac. Sci. Technol. B 23, L22 (2005).
40. N.C. Chen, P.H. Chang, Y. N. Wang, H.C. Peng, W.C. Lien, C. F. Shih, Chin-An
Chang, G.M. Wu, “Schottky behavior at InN-GaN interface”, Appl. Phys. Lett. 87,
2121111 (2005).
41. C. F. Shih, N. C. Chen, P. H. Chang, and K. S. Liu, “Band offsets of the InN/GaN
interface” Jpn. J. Appl. Phys. 44 7892 (2005).
42. C. F. Shih, N. C. Chen, P. H. Chang, and K. S. Liu, “Effect of surface electronic states
of p-type GaN on the blue light-emitting diodes”, J. Electrochem. Soc.152, G816
(2005).
3/4
43. C. F. Shih, N. C. Chen, P. H. Chang, and K. S. Liu, “Field emission properties of
self-assembled InN nano-structures: Effect of Ga incorporation”, J. Cryst. Growth 281,
328 (2005).
44. S.C. Chen, S.K. Lin, K.T. Wu, C.P. Huang, P.H. Chang, N.C. Chen, C.A. Chang, H.C.
Peng, C. F. Shih, K.S. Liu, H.S. Wang, P.T. Yang, C. T. Liang, Y. H. Chang, and Y.F.
Chen, “Transport measurements on MOVPE-grown InN films”, Microelectronics
Journal 36, 428 (2005).
45. C. F. Shih, N. C. Chen, P. H. Chang, K. S. Liu “AlGaN films grown on (0001)
sapphire by a two-step method”, Appl. Phys. Lett. 86, 2111031, (2005).
46. C. F. Shih, N. C. Chen, C. A. Chang, and K. S. Liu, “Blue, Green, and White InGaN
Light-Emitting Diodes Grown on Si” Jpn. J. of Appl. Phys. part 2, Vol. 44, No. 4A, pp
L140-L143 (2005).
47. C. F. Shih, M. Y. Keh, Y. N. Wang, N. C. Chen, Chin-An Chang, P. H. Chang, and K.
S. Liu, “High quality and crack-free AlxGa1-xN (x~0.2) grown on sapphire by a
two-step growth method” J. Cryst. Growth 277, 44 (2005).
48. S. K. Lin, K. T. Wu, C. P. Huang, C. T. Liang, Y. H. Chang, Y. F. Chen, P. H. Chang, N.
C. Chen, C. A. Chang, H. C. Peng, C. F. Shih, K. S. Liu, and T. Y. Lin, “Electron
transport in In-rich InxGa1-xN films” J. Appl. Phys. 97, 046101 (2005).
49. C. A. Chang, C. F. Shih, N. C. Chen, T. Y. Lin, and K. S. Liu “In-rich In1-xGaxN films
by metalorganic vapor phase epitaxy” Appl. Phys. Lett. 85, 6131 (2004).
50. N. C. Chen, C. Y. Tseng, A. P. Chiu, C. F. Shih, and P. H. Chang, “Application of
modified transmission line model to measure p-type GaN contact” Appl. Phys. Lett.
85, 6086 (2004).
51. N. C. Chen, P. H. Chang, A. P. Chiu, M. C. Wang, W. S. Feng, G. M. Wu, C. F. Shih,
and K. S. Liu, “Modified transmission line model and its application to aluminum
ohmic contacts with n-type GaN” Appl. Phys. Lett. 84, 2584 (2004).
52. N. C. Chen, C. F. Shih, C. A. Chang, A. P. Chiu, S. D. Teng, and K. S. Liu,
“High-quality GaN films grown on Si(111) by a reversed Stranski-Krastanov growth
mode” Phys. Status Solidi B-Basic Res. 241, 2698 (2004).
53. C. A. Chang, C. F. Shih, N. C. Chen, P. H. Chang, and K. S. Liu, “High mobility InN
films grown by metal-organic vapor phase epitaxy” Phys. Status Solidi C, 1, 2559
(2004).
54. I-Nan Lin, K. Perng, L. H Lee, C. F. Shih, K. S. Liu, G. A. Evans and J. W. Steeds,
“Comparison of the effect of boron and nitrogen incorporation on the nucleation
behavior and electron-field-emission properties of chemical-vapor-deposited diamond
films” Appl. Phys. Lett. 77, 1277 (2000).
55. C. F. Shih, K. S. Liu, I-Nan Lin, “Effect of nitrogen doping on the electron field
emission properties of chemical vapor deposited diamond films” Diam. Rel. Mater. 9,
1591 (2000).
(B) Conference paper
1. 1. C. Y. Hsiao, S. W. Fu, H. T. Wu, K. T. Huang, H. J. Chen, K. T. Hung, and C. F. Shih,
“Si-rich oxide films prepared by ion-beam-assisted sputtering”, 2012 International
4/4
Conference on Thin Films(Thin Films2012), Singapore, p234, July 11-14, 2012.
2. H. T. Wu, S. W. Fu, H. J. Chen, K. T. Huang, K. T. Hung, C. Y. Hsiao, and C. F. Shih,
“Effect of Solvent Annealing on Poly(3-hexylthiophene) and [6,6]-phenyl-C61-butyric
Acid Methyl Ester: Study on Phase Separation”, 2012 International Conference on
Thin Films(Thin Films2012), Singapore, p256, July 11-14, 2012.
3. K. T. Hung, H. T. Wu, K. T. Huang, C. Y. Hsiao, S. W. Fu, H. J. Chen, and C. F. Shih,
“In situ measurement of organic solar cells with additives during annealing”, 2012
International Conference on Thin Films(Thin Films2012), Singapore, p256, July 11-14,
2012.
4. C.Y. Hsiao, K. T. Hung, H. T. Wu, H. J. Chen , S. W. Fu, and C. F. Shih, “Synthesis
and Application of Magnesium Oxide Nanospheres with High Surface Area”, 2011
International Conference on Electroceramics (2011 ICE), Sydney, Australia, p72,
December 12-16, 2011.
5. C.Y. Hsiao, K. T. Hung, H. T. Wu, H. J. Chen , S. W. Fu, and C. F. Shih, “Epitaxy of
Zn2TiO4 (111) Thin Films on GaN (001)”, 2011 International Conference on
Electroceramics (2011 ICE), Sydney, Australia, p70, December 12-16, 2011.
6. C. Y. Hsiao, K. W. Su, K. T. Hung, H. T. Wu, H. J. Chen, S. W. Fu, S. H. Wu, and C. F.
Shih, “Low-energy ion-beam assisted sputtering for Si nanocrystals”, 2011
International Conference on Solid State Devices and Materials (2011SSDM), Nagoya,
Japan, September 28-30, 2011.(accepted)
7. K. T. Hung, C. Y. Hsiao, H. T. Wu, and S. W. Fu, H. J. Chen, C. F. Shih, “In situ
monitoring of organic solar cells during thermal annealing”, 2011 International
Conference on Solid State Devices and Materials (2011SSDM), Nagoya, Japan,
September 28-30, 2011.(accepted)
8. H. J. Chen, K. T. Hung, C. Y. Hsiao, S. W. Fu, H. T. Wu, S. H. Wu, and C. F. Shih,
“Sodium doping at CuPc/C60 interface for photovoltaic application”, 2011
International Conference on Solid State Devices and Materials (2011SSDM), Nagoya,
Japan, September 28-30, 2011.(accepted)
9. H. T. Wu, C. Y. Hsiao, K. T. Hung, H. J. Chen, S. W. Fu, S. H. Wu, C. F. Shih,
“Comprehensive studies of solvent annealing on organic photovoltaics”, 2011
International Conference on Solid State Devices and Materials (2011SSDM), Nagoya,
Japan, September 28-30, 2009.(accepted)
10. S. W. Fu, J. C. Wu, C. Y. Hsiao, K. T. Hung,, H. T. Wu, H. J. Chen, S. H. Wu, and C.
F. Shih, “Epitaxy of spinel Zn2TiO4 (111) on GaN (001) for MOS application”, 2011
International Conference on Solid State Devices and Materials (2011SSDM), Nagoya,
Japan, September 28-30, 2011.(accepted)
11. H. J. Chen, K. T. Hung, C. Y. Hsiao, S. W. Fu, H. T Wu, S. H. Wu, and C. F. Shih,
“Study of Interfacial Sodium Doping in CuPc/C60-Based Heterojunction Organic
Solar Cells”, International Union of Materials Research Societies- 12th International
Conference in Asia (IUMRS-ICA 2011), Taipei, Taiwan, September 19-22,
2011.(accepted)
12. K. T. Hung, C. Y. Hsiao, H. T. Wu, S. W. Fu, H. J. Chen, and C. F. Shih, “In situ
5/4
monitoring of the photovoltaic and transport properties of organic solar cells during
thermal annealing”, International Union of Materials Research Societies- 12th
International Conference in Asia (IUMRS-ICA 2011), Taipei, Taiwan, September
19-22, 2011.(accepted)
13. H. T. Wu, C. Y. Hsiao, K. T. Hung, H. J. Chen, S. W. Fu, S. H. Wu, and C. F. Shih,
“Influence of Solvents on Organic Photovoltaics”, International Union of Materials
Research Societies- 12th International Conference in Asia (IUMRS-ICA 2011), Taipei,
Taiwan, September 19-22, 2011.(accepted)
14. C. Y. Hsiao, K. W. Su, and C. F. Shih, “Room-temperature photoluminescence for Si
nanocrystals embedded in Si-rich oxide by ion-beam assisted sputtering”, International
Union of Materials Research Societies- 12th International Conference in Asia
(IUMRS-ICA 2011), Taipei, Taiwan, September 19-22, 2011.(accepted)
15. S. W. Fu, J. C. Wu, C. Y. Hsiao, K. T. Hung, S. H. Wu, H. J. Chen, H. T. Wu, and C.
F. Shih, “Properties of Epitaxial Spinel Thin Films on GaN Substrates”, International
Union of Materials Research Societies- 12th International Conference in Asia
(IUMRS-ICA 2011), Taipei, Taiwan, September 19-22, 2011.(accepted)
16. C. Y. Hsiao, K. T. Huang, K. T. Hung and C. F. Shih, “Comparison of silicon
nano-crystals embedded photodetectors deposited by sputtering and PECVD”, 2010
International Conference on Thin Films(Thin Films2010), Harbin, China, p297, July
11-14, 2010.
17. K. T. Hung, K. T. Huang, C. Y. Hsiao and C. F. Shih, ”Efficiency Improvement of
Pentacene/Fullerence Heterostructural Solar Cells by Inserting Periodic
Multi-Layers ” , 2010 International Conference on Thin Films(Thin Films2010),
Harbin, China, p374, July 11-14, 2010.
18. C. F. Shih, W. M. Li, K. S. Tung, C. Y. Hsiao, and K. T. Hung, “Microwave
dielectric properties of MgTiO3 by sintering MgO and TiO2 Nanostructures”, 2009
International Conference on Solid State Devices and Materials (2009SSDM), Sendai,
Japan, p69, October 7-9, 2009.
19. C. F. Shih, C. Y. Hsiao, C. B. Shu, K. T. Hung, and W. M. Li, “Photoresponse of
phase separated hafnium silicate in metal-insulator-semiconductor structure”, 2009
International Conference on Solid State Devices and Materials (2009SSDM), Sendai,
Japan, p65, October 7-9, 2009.
20. C. F. Shih, K. T. Hung, j. W. Wu, C. Y. Hsiao, and W. M. Li, “Efficiency
improvement of organic solar cells by hot-pressing”, 2009 International Conference on
Solid State Devices and Materials (2009SSDM), Sendai, Japan, p40, October 7-9,
2009.
21. C. F. Shih, W. M. Li, K. S. Tung, M. M. Lin, K. T. Hung, and C. Y. Hsiao,
“Microwave dielectric properties of MgTiO3 by sintering MgO and TiO2
nanostructures”, 11th International Conference and Exhibition of the European
Ceramic Society (11th ECERS), Krakow, Poland, p91, June 21-25, 2009.
22. W. M. Lee, C. F. Shih, M. M. Lin, and K. T. Hung, “Low temperature sintering of
ZnTiO3 from ZnO and TiO2 nanostructures prepared by a chemical solution route.”,
The 4th Asian Conference on Crystal Growth and Crystal Technology (CGCT4),
6/4
Sendai, Japan, p128, May 21-24, 2008.
23. K. T. Hung, C. F. Shih, W. M. Lee, J. W. Wu, and T. Y. Lin, “Investigation of
pentacene-based organic solar cells with a thin pentacene:C60 interlayer”, The 4th
Asian Conference on Crystal Growth and Crystal Technology (CGCT4), Sendai, Japan,
p140, May 21-24, 2008.
24. S. C. Shu, C. F. Shih, C. B. Shu, and W. M. Lee, “Properties of Al/HfO2/GaN
metal-oxide-semiconductor capacitor”, The 4th Asian Conference on Crystal Growth
and Crystal Technology (CGCT4), Sendai, Japan, p146, May 21-24, 2008.
25. S. K. Lin, K. T. Wu, S. C. Chen, C. P. Huang, P. H. Chang, N. C. Chen, C. A. Chang,
H. C. Peng, C. F. Shih, K. S. Liu, H. S. Wang, P. T. Yang, C. T. Liang, Y. H. Chang and
Y. F. Chen, “Measurements on MOVPE-grown InN thin films”, Th-P29, p181, 5th
International Conference on Low Dimensional Structures and Devices (LDSD),
Cancun-Mayan Rivera, December 12-17, (2004), Mexico.
26. P. H. Chang, N. C. Chen, C. A. Chang, H. C. Peng, C. F. Shih, K. S. Liu, S. K. Lin,
K. T. Wu, S. C. Chen, C. P. Huang, H. S. Wang, P. T. Yang, C. T. Liang, Y. H. Chang
and Y. F. Chen, “Transport measurements on MOVPE-grown InN films”, p85, the 9th
Asia Pacific Physics Conference(9th APPC), October 25-31(2004), Vietnam.
27. C. A. Chang, C. F. Shih, N. C. Chen, and K. S. Liu, “High mobility InN Films
Grown by MOVPE”, The 5th international Symposium on Blue Laser and Light
Emitting Diodes, p.56, 2004.
28. N. C. Chen, C. F. Shih, C.A. Chang, and K.S. Liu, “High quality GaN films grown
on Si (111) by reversed Stranski-Krastanov growth mode”, The 5th international
Symposium on Blue Laser and Light Emitting Diodes, p.285, 2004.
(C) 國內會議
1. 蕭竹芸, 簡志華, 施權峰, “氧化鋁基板上之鈦酸鎂薄膜特性研究”, 九十九年中國材料科
學學會年會, Kaohsiung, Taiwan,p189 , October 19-20, 2010.
2. 洪廣騰, 黃致賢, 施權峰, “摻雜微量鉀於酞菁銅碳六十異質接面有機太陽能電池之研究”,
九十九年中國材料科學學會年會, Kaohsiung, Taiwan, p150, October 19-20, 2010.
3. 蕭竹芸, 徐丞伯, 施權峰, “矽酸鉿厚度及退火溫度對電子嵌陷的影響”, 九十八年中國材
料科學學會年會, Hualien, Taiwan, November 26-28, 2009.
4. 李偉民, 董國信, 施權峰, “溶液法低溫合成高比表面積奈米結構氧化鎂”, 九十八年中國
材料科學學會年會, Hualien, Taiwan, November 26-28, 2009.
5. 施權峰, 洪廣騰, 吳震緯, 黃致賢, ”利用微奈米壓印技術改善高分子太陽能電池”, 九十
八年中國材料科學學會年會, Hualien, Taiwan, November 26-28, 2009.
(D) Books
1. N. C. Chen and C. F. Shih, III-Nitride Devices and Nanoengineering, Chapter 9
"III-nitride light-emitting diodes on Si" in pp. 253-276, Published by World Scientific
2008.
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