Supplemental Material S1. Comprehensive review of the As doped p-type ZnO using various
methods summarizing values of electrical parameters.
Sl. no
Technique
used
1
PVD
2
RFMS
3
Ion
Implantation
Type
Carrier
concentration
(cm-3)
600
650
(Annealing)
P
p
-
200
400
450
500
750
n
p
p
p
p
w/o
annealing
n
800
400
(n to p type)
p
-
AsO, AsZn,
Asi, VZn,
VO
AsZn-2VZn
p
6x1017
AsZn-2VZn
700
p
(RTA)
700
800
900
1000
1100
300
350
400
450
n
n
p
n
n
n
p
p
RFMS
500
9
PLD
(RTA 2 min)
200
(in N2
ambiance)
10
PLD
(as sl. 9)
4
5
6
7
8
RFMS
RFMS
MDCS
PLD
Annealing
temperature
(0c)
5x1016
2x1016
1017
1018
19
10 –1020
-
RFMS
AsZn-2VZn
AsZn-2VZn
AsZn-2VZn
Spectroscopic
technique used
LTPL+XPS
LTPL+XPS
LTPL+XPS
LTPL+XPS
LTPL+XPS
Reference
(Year)
1 (2010)
2 (2011)
3 (2012)
4 (2009)
5 (2010)
XPS
6 (2013)
1020
AsZn-2VZn
1018 - 1021
-
p
-
p
2.48x1017 and
1.18x1018
p
-
450
11
Defect states
SIMS+LTPL
7 (2000)
-
LTPL+SIMS
8 (2004)
A0X
LTPL
9 (2005)
XANES
10 (2006)
AsO
-
(20 min)
n
(40 min)
n
(60 min)
p
11 (2007)
9.1x1015
1
AsZn-2VZn
-
12
13
14
15
16
RFMS
ALD
MOCVD
MOCVD
RFMS
(60 min
Annealing)
650 (vac)
750 (vac)
750 (oxy)
750 (↑oxy)
(RTA-3min)
500
550
600
650
700
Anneal
(30 min)
650
Anneal
(30 min)
600
450
(Ar+30 min)
550
600
650
700
750
(H2O vapor
ambient)
n
p
p
p
1018 - 1019
1019
1020
1019
n
n
p
p
p
1017
1016
1018
1020
1020
p
1.38x1019
AsZn-2VZn
CO-GaZn
p
-
AsZn-2VZn
p
1017
AsZn-2VZn
p
2.651x1017
n
n
n
p
1019
1018
1018
2.651x1017
AsZn-2VZn
18
MOCVD
-
p
-
AsZn-2VZn
AsO
RFMS
Anneal
Oxygen
(20 min)
500
p
9.684x1019
AsZn-2VZn
MOCVD
Anneal N2
ambiance
(30 min)
680
21
MOCVD
Anneal
Oxygen
(1 hr)
500
550
600
p
1.2x1017
p
-
2
XPS+PL
13 (2011)
XPS
14 (2013)
AsZn-2VZn
MOCVD
20
12 (2006)
AsO
17
19
SIMS+XPS
XPS
15 (2008)
XPS
16 (2007)
LTPL
17 (2012)
XPS
18 (2013)
LTPL+XPS
AsZn-2VZn
XPS
DAP
LTPL
19 (2006)
20 (2007)
21 (2008)
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4