Prof. Xiu’s group focuses on the development of multiferroic and ferroelectric materials and topological
insulator nanostructures for nanoelectronic and spintronic applications. The research areas include 1)
the growth of multiferroic and ferroelectric materials such as cobalt ferrite CoFe2O4 and barium
titanate BaTiO3 by pulsed laser deposition; 2) the development of novel topological thin films and
nanostructures by molecular beam epitaxy and tube furnaces; 3) the integration of magnetic materials
with topological insulators for novel device functionalities; and 4) the device fabrication and
characterizations including magnetic sensors and novel nanostructure transistors.
In his latest research, his team demonstrated for the first time the topological surface states in an
emerging topological insulator called Bi2Se2Te by uncovering a weak anti-localization effect in Bi2Se2Te
during the low-temperature transport measurements. Prominent quantum oscillations in the electrical
resistance of bulk crystals under a varying magnetic field suggest that unique carrier transports exist on
these surfaces. The research enriches the current family of topological insulators and provides an
alternative platform for exploring exotic quantum physical phenomena and low power-dissipation
device applications.
The group also has interest in investigating quantum capacitance of topological surface states. The team
proposed and measured the amount of electrical charge stored in the material under the application of
a time-varying electrical voltage (quantum capacitance) to extract information regarding the electron
transport on the topological surfaces. Their method allows for the recognition of surface conduction at
temperatures up to 60 K. This finding is an important milestone in realizing topological devices for hightemperature applications.
Recent publications:
 Lihong Bao, Liang He, Nicholas Meyer, Peng Zhang, Zhi-gang Chen, Alexei V. Fedorov, Jin Zou, Trevor
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M. Riedemann, Thomas A. Lograsso, Kang L. Wang, Gary Tuttle, Faxian Xiu*, “Weak Anti-localization
and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te”, Scientific Reports 2,
726 (2012).
Faxian Xiu,* Nicholas Meyer, Xufeng Kou, Liang He, Murong Lang, Yong Wang, Xinxin Yu, Alexei V.
Fedorov, Jin Zou, and Kang L. Wang, “Quantum Capacitance in Topological Insulators”, Scientific
Reports 2, 669 (2012).
(Invited Book Chapter) Nicholas Meyer, Lihong Bao, Faxian Xiu,* “Topological Insulator
Nanostructures”, Vol. 8: Electronics and Photovoltaics, Series Title “Nanotechnology”, Series ISBN 162699-000-X, pp. 133-162 (2012). Publisher: Studium Press LLC.
“Manipulating surface states in topological insulator nanoribbons”, Faxian Xiu,* Liang He, Yong
Wang, Lina Cheng, Li-Te Chang, Murong Lang, Guan Huang, Xufeng Kou, Yi Zhou, Xiaowei Jiang, Jin
Zou, Alexandros Shailos, and Kang L. Wang, Nature Nanotechnology 6, 216-221(2011). Highlighted
by Nature Nanotechnology, News and Views by Professor Xue “Nanoelectronics: A topological twist
for transistors”, Nature Nanotechnology, 6, 197-198 (2011).
“Electric field controlled ferromagnetism in high Curie temperature Mn0.05Ge0.95 quantum dots”,
Faxian Xiu, Yong Wang, Jiyoung Kim, Augustin Hong, Jianshi Tang, Ajey P. Jacob, Jin Zou, and Kang L.
Wang, Nature Materials 9 (4), 337-344 (2010). (Highlighted by Physorg.com etc.).
“Observation of very large tunable negative magnetoresistance in graphene nanoribbon field-effect
transistors”, Jingwei Bai, Rui Cheng, Faxian Xiu, Lei Liao, Minsheng Wang, Alexandros Shailos, Kang L.
Wang, Yu Huang, and Xiangfeng Duan, Nature Nanotechnology 5, 655-659 (2010).