20120820 Angle-XPS analysis of films
1. Silicon oxide film on Si wafer (thinfilm SiO2/Si)
Carbonate and Silica on the Si wafer.
2. Germanium oxide film (thin-film Ge2O3/Ge)
Repeating measurement next day
3. Gallium nitride film (GaN surface)
PCA method in Avantage
Si-O/Si film thickness (if no carbonate)
Elemental ID and Quantification
Name
Si2p
Si2p-ox
C1s
O1s
Peak BE
99.412
102.872
284.756
532.438
Height CPS
37133.1
5575.2
25705.4
73755.0
FWHM eV
0.654
1.768
1.491
1.619
Area (P) CPS.eV
37652.81
9979.02
51290.04
131111.99
At. %
29.37
7.79
33.10
29.74
Q
1
1
1
1
Ge-O/Ge film
D=2.6nm
D=2.6nm
Elemental ID and Quantification
Name
Ge3d
Ge3d-ox
C1s
O1s
Peak BE
29.914
33.421
285.447
532.625
Height CPS
19835.5
24707.4
13196.0
106493.8
FWHM eV
1.042
1.618
1.490
1.780
Area (P) CPS.eV
20420.89
41513.03
24198.19
220505.95
At. %
9.78
19.89
16.73
53.59
Q
1
1
1
1
Repeating Ge-ox/Ge measurement as followings.
Elemental ID and Quantification
Name
Ge3d
Ge3d-ox
C1s
O1s
Peak BE
29.894
33.378
285.455
532.546
Height CPS
15939.5
20235.9
9843.5
89748.9
FWHM eV
1.087
1.647
1.618
1.837
Area (P) CPS.eV
17259.60
34929.09
20285.80
189663.78
At. %
9.71
19.66
16.48
54.14
Q
1
1
1
1
GaN analysis
Elemental ID and Quantification
Name
Ga3d
C1s
N1s
O1s
Peak BE
20.056
285.017
397.763
531.885
Height CPS
37501.0
17712.1
37928.2
10885.8
FWHM eV
1.176
1.250
0.744
2.299
Area (P) CPS.eV
49209.86
25125.39
29438.69
29740.46
At. %
46.12
25.97
17.10
10.81
Q
1
1
1
1
SF Al Scof
1.085
1.000
1.800
2.930