論文著述：
(一)期刊論文
1.
Shang-Chao Hung, “Generation of Piezoelectricity by Deflecting Nanorods
Vertically on GaN Template”, Journal of The Electrochemical Society, Vol. 158, No 12,
pp. H1_H5. (2011). (2009I.F=2.241)(2010I.F2.420)
2.
W. Y. Weng, T. J. Hsueh, S. J. Chang, S. C. Hung, G. J. Huang, H. T. Hsueh, Z. D.
Huang, and C. J. Chiu, “An(AlxGa1-x)2O3 Metal-Semiconductor- Metal VUV
Photodetector”,IEEE Sensors Journal, Vol. 11, No. 9, (SEP 2011). (I.F=1.581) (1.471)
3.
W. Y. Weng, T. J. Hsueh, Shoou-Jinn Chang, G. J. Huang, S. C. Hung,“Growth of
Ga2O3 Nanowires and the Fabrication of Solar-Blind Photodetector”, IEEE
Transactions on Nanotechnology, Vol. l0, No. 5, (SEP 2011). (I.F=1.671) (1.864)
4.
S.J. Chang, C.H. Hsiao, S.C. Hung, S.J. Young, Y.C. Cheng, B.R.Huang, S.B.
Wang, S.H. Chih and T.P. Chen, “Growth and Characterization of ZnSe/CdSe
Multiquantum Disks”, IEEE Journal of Selected Topics in Quantum Electronics, Vol.
17, Issue 4, pp.779-784 (JUL-AUG 2011). (I.F=3.064) (3.458)
5.
S.J. Chang, C.H. Hsiao, S.C. Hung, S.H. Chih, S.B. Wang, B.R.Huang, S.P. Chang,
Y.C. Cheng and S.J. Young, “ZnSe/ZnCdSeTe Superlattice Nanotips”, IEEE Transactions
on Nanotechnology, Vol. 10, Issue 4, pp. 682-687 (JUL 2011). (I.F=1.671) (1.864)
6.
S.J. Chang, C.H. Hsiao, B.W. Lan, S.C. Hung, B.R. Huang, S.J. Young, Y.C. Cheng
and S.H. Chih, “Growth of ternary ZnCdSe nanowires and the fabrication of ZnCdSe
nanowire photodetectors”Superlattices And Microstructures, Vol.48, Issue 1,
pp.50-57 (Jul 2010).(I.F=0.910)(1.091)
7.
C.H. Hsiao, S.C. Hung, S.H. Chih, S.B. Wang, Y.C. Cheng, B.R. Huang, S.J. Young
and S.J. Chang, “ZnSe/ZnSeTe Superlattice Nanotips”, Nanoscale Research Letters, Vol.
5, Issue 6, pp.930-934 (Jun 2010). (I.F=2.894)(2.557)
8.
B.W Lan, C.H. Hsiao, S.C. Hung, S.J. Chang, S.J. Young, Y.C. Cheng, S.H. Chih
and B.R. Huang, “ZnCdSe nanowires grown by molecular beam epitaxy”, Journal of
Vacuum Science & Technology B ,Vol.28, Issue 3, pp.613-616 (MAY 2010).
(I.F=1.460)(1.268)
9.
Y.X. Sun, W.S. Chen, S.C. Hung, K.T. Lam, C.H. Liu and S.J. Chang, “GaN-Based
Power Flip-Chip LEDs With an Internal ESD Protection Diode on Cu Sub-Mount,” IEEE
Transactions on Advanced Packaging, Vol.33, Issue 2, pp.433-437 (May 2010).
(I.F=1.122)(1.276)
10. C.H. Hsiao, S.J. Chang, S.C. Hung, Y.C, Cheng, B.R. Huang, S.B. Wang, B.W. Lan
and S.H. Chih, “ZnSe/ZnCdSe heterostructure nanowires,” Journal of Crystal Growth,
Vol. 312, Issue 10 , pp.1670-1675 (May 2010). (I.F=1.435)(1.737)
11. S.J. Chang , C.H. Hsiao, S.B. Wang, Y.C. Cheng, T.C. Li, S.P. Chang, B.R. Huang and
S.C. Hung, “A Quaternary ZnCdSeTe Nanotip Photodetector” Nanoscale Research
Letters, Vol. 4 , Issue 12, pp.1540-1546 (Dec 2009). (I.F=2.894)( 2.557)
12. S. J. Chang, C. H. Hsiao, S. C. Hung, S. H. Chih, B. W. Lan, S. B. Wang,S. P. Chang,
Y. C. Cheng, T. C. Li and B. R. Huang, “Growth of ZnSe(1−x)Te(x) Nanotips and the
Fabrication of ZnSe(1−x)Te(x)Nanotip-Based Photodetector”, Journal of The
Electrochemical Society, Vol. 157 , Issue 1 , pp. K1-K4 (Nov 2009). (I.F=2.241)( 2.420)
13. C. H. Hsiao, S. J. Chang, S. B. Wang, S. C. Hung, S. P. Chang, T. C. Li, W. J. Lin
and B. R. Huang, “MBE growth of ZnSe nanowires on oxidized silicon Substrate”,
Superlattices And Microstructures Vol. 46,Issue 4, pp.572-577 (Oct 2009).
(I.F=0.910)( 1.091)
14. S.C. Chang, S. C. Hung, B.Y. Chen, T.C. Lin, “Anisotropic stress effect on
aluminum doped zinc oxide films produced from in-linesputtering”, Journal of Taiwan
Vacuum Society , Vol. 22, Issue 3, pp.27-31 (August 30,2009)
15. H. Y. Lin, S. L. Wu, S. J. Chang, C. W. Kuo, Y. P. Wang, S. C. Hung, “DC and 1/f
noise characteristics of strained-Si nMOSFETs using chemical-mechanical-polishing
technique” , Solid-State Electronics, Vol.53, Issue 8, pp.905-908 (Aug 2009).
(I.F=1.494)( 1.438)
16. C. W. Kuo, S. L. Wu, S. J. Chang, H. Y. Lin, Y. P. Wang, S. C. Hung, “Investigation of
interface characteristics in strained-Si nMOSFETs” ,Solid-State Electronics , Vol. 53,
Issue 8, pp.897-900 (Aug 2009).(I.F=1.494) ( 1.438)
17. S. J. Chang, W. S. Chen, S. C. Shei, C. F. Shen, T. K. Ko, J. M. Tsai,W. C. Lai, J. K.
Sheu, A. J. Lin and S. C. Hung, “GaN-Based Power Flip-Chip LEDs With Cu Submount”,
IEEE Journal of Selected Topics in Quantum Electronics, Vol.15, Issue 4, pp.1287-1291
(Jul-Aug 2009). (I.F=3.064)( 3.458)
18. K. T. Lam, S. C. Hung, C. F. Shen, C. H. Liu, Y. X. Sun and S. J. Chang, “Effects of
the sapphire substrate thickness on the performances of GaN-based LEDs”,
Semiconductor Science and Technology , Vol. 24, Article Number 065002 (Jun 2009)
(I.F=1.253)( 1.323)
19. D. S. Kuo, S. J. Chang, T. K. Ko, C. F. Shen, S. J. Hon and S. C. Hung,
“Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls”, IEEE
Photonics Tech. Lett., Vol. 21, No. 8, pp.510-512 (April 2009) (I.F=1.815)( 1.987)
20. W. Y. Weng, S. J. Chang, W. C. Lai, T. J. Hsueh, S. C. Shei, X. F. Zeng, S. L. Wu and
S. C. Hung, “GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap
Layer” , IEEE Photonics Tech. Lett, Vol. 21, No. 8, pp.504-506 (Apr 2009). (I.F=1.815)
( 1.987)
21. S. C. Hung, Y. K. Su*, T. H. Fang and S. J. Chang, “Shell buckling behavior
investigation of individual gallium nitride hollow nanocolumn”,Applied Physics A:
Materials Science & Processing, Vol.84, No. 4, pp.439-443 (2006) (I.F=1.595)
22. S. C. Hung*, Y. K. Su, S. J. Chang and Y. H. Chen, “Vertically aligned GaN
nanotubes - fabrication and current image analysis”,Microelectronic Engineering,
Vol.83, No. 11-12, pp.2441-2445 (2006).(I.F=1.488)
23. S. C. Hung*, Y. K. Su, S. J. Chang, L. W. Ji, D. Shen and C. H. Huang, “InGaN/GaN
MQD p–n junction photodiodes” , Physica E , Vol. 30 ,No. 1-2, pp. 13-16 (2005)
24. L. W. Ji*, S. C. Hung, Y. K. Su, S. J. Chang, R. W. Chuang and T. H. Fang, “Ultra
small self-organized nitride nanotips”, J. Vac. Sci. Technol. B, vol. 23, No. 6, pp.
2496-2498 (2005)
25. S. C. Hung*, Y. K. Su, T. H. Fang, S. J. Chang and L. W. Ji,“Buckling instabilities in
GaN nanotubes under uniaxial compression” ,Nanotechnology J, Vol. 16, No. 10,
pp.2203-2208 (2005)
26. S. C. Hung*, Y. K. Su, S. J. Chang, S. C. Chen, T. H. Fang and L. W. Ji, “GaN
nanocolumns formed by inductively coupled plasmas etching” , Physica E, Vol. 28, No.
2, pp.115-120 (2005)
27. S. C. Hung, Y. K. Su, S. J. Chang*, S. C. Chen, L. W. Ji, T. H. Fang,L. W. Tu and M.
Chen, “Self-formation of GaN hollow nanocolumns by inductively coupled plasma
etching” , Appl. Phys. A , Vol. 80, No. 8, pp.1607-1610 (2005)
28. L. W. Ji, Y. K. Su, S. J. Chang, S. C. Hung, C. S. Chang and L. W. Wu, “Nitride-based
light-emitting diodes with InGaN/GaN SAQD active layers”, IEE Proc.-Circuit Device
Syst., Vol. 151, No. 5 , pp. 486-488 (2004)
29. L. W. Ji, Y. K. Su, S. J. Chang, S. T. Tsai, S. C. Hung, R. W. Chuang, T. H. Fang and T.
Y. Tsai, “Growth of InGaN Self-Assembled Quantum Dots and Their Application to
Photodiodes”, J. Vac. Sci. Technol. A,Vol. 22, pp. 792-795 (2004) L. W. Ji*, Y. K. Su, S.
J. Chang, T. H. Fang, T. C. Wen and S. C. Hung, “Growth of ultra small self-assembled
InGaN nanotips”, J. Cryst. Growth, Vol. 263, No. 1-4 pp. 63-67 (2004)
30. L. W. Ji, Y. K. Su, S. J. Chang, S. C. Hung, C. K. Wang, T. H. Fang, T. Y. Tsai, R. W.
Chuang, W. Su and J. C. Zhong, “InGaN metal-semiconductor-metal photodiodes with
nanostructures”, Jpn. J. Appl. Phys., Vol. 43, No. 2, pp. 518-521 (2004)
31. T. C. Liang, N. J. Cheng , and S. C. Hung, “Gain Enhancement in L-Band
Gain-Flattened EDFA by Reflective-Type Structure”, Microw Opt. Techn. Let., Vol. 37,
No. 5, pp393-395, 2003. (EI)
(二)研討會論文
S. C. Hung, C. H. Hsiao, N. J. Cheng, Y. M. Li ,Y. S. Tu, “Photo Luminescence
Investigations of Nanoscale Islands, Tips, Tubes and Cones Standing on GaN
Template”, The 4th IEEE International NanoElectronics Conference (2011 INEC),
Tao-Yuan, Taiwan (June 21-24,2011) ISBN 978-957-30447-7-2
Y. M. Li, N. J. Cheng, C. H. Hsiao, S. C. Hung, “The Study of Converting
Mechanical Energy to Electrical Energy on ZnO Nanorods”,National Symposium on
System Science and Engineering (NSSSE), Puli Nanton,Taiwan (June 17-18,2011) ISBN
978-957-9129-74-9
3.
Yi-Cheng Hsu, Shi-Ping Hong, Shan-Chao Hung, “The Reduction of Postweld
Shift on Butterfly Type Laser Module Packaging Employing Nd:YAG Laser and
Separated Dual Clip：Simulation and Experiment”,The 12th International
Symposium on Laser Precision Microfabrication(LPM2011) Takamatsu, Kagawa, Japan
(June 7-10, 2011)
4.
S. C. Hung, C. H. Hsiao, Y. C. Hsu, N. J. Cheng, Y. S. Tu, “Fabrication and
Characteristics of Conical Silicon Emitters employing Dry etching”, 5nd Asia-Pacific
Workshop on widegap Semiconductors(APWS), Toba, Mie, Japan (May 22-26,2011)
5.
Chih-Hung Hsiao, Shang-Chao Hung, Sheng-Joue Young and Shoou-Jinn
Chang “ZnSe/CdSe multi-quantum disks on oxidized silicon substrate by MBE”, 5nd
Asia-Pacific Workshop on widegap Semiconductors (APWS), Toba, Mie, Japan (May
22-26,2011)
6. C. H. Hsiao, S. C. Hung, S. J. Young, T. P. Chen, S. M. Wang, S. J. Chang “Growth
of ZnSe/ZnCdSeTe superlattice nanotips ”, The 219THECS meeting, Montreal, Canada
(May 1-6, 2011)
7. C.C. Tsai, C.H. Chung, J. Wang, W.C. Cheng, M.H. Chen, J.S. Liou, J.K. Chang, Y.C.
Hsu, S.C. Hung, C.W. Lee, H.L. Hu, S.B. Huang, J.H. Kuang and W.H. Cheng, “High
Thermal Stability of High-Power Phosphor Based White-Light-Emitting Diodes
Employing Ce:YAG-Doped Glass” Sixtieth Electronic Components & Technology
Conference (ECTC), Las Vegas, Nevada, USA (Jun 1-4, 2010)
8. C. H. Hsiao, S. H. Chih, B. W. Lan, S. B. Wang, S. C. Hung and S. J. Chang, “Growth
of ZnCdSeTe and ZnSe/ZnCdSeTe heterostructure nanotips by molecular beam
epitaxy”, International Symposium on Compound Semiconductors (ISCS), Kagawa,
Japan (May 31 - June 4, 2010)
9. B. W. Lan, C. H. Hsiao, S. H. Chih, S. C. Hung, K. J. Chang and S. J. Chang, “Optical
character of ZnSe/ZnCdSe quantum heterostructure nanowires”, Optics And
Photonics Taiwan (OPT), National Taiwan Normal University, Taipei , Taiwan (Dec
11-12, 2009)
10. S. H. Chih, C. H. Hsiao, S. C. Hung, Y. C. Cheng and S. J. Chang, “Growth and
photodetector applications of quaternary ZnCdSeTe nanotips”, Optics And Photonics
Taiwan (OPT), National Taiwan Normal University, Taipei , Taiwan (Dec 11-12, 2009)
11. J. K. Chang, W. C. Cheng, C. H. Chung, J. S. Liu, C. C. Tsai, S. C. Hung, Y. C. Hsu, C. S.
Wu, T. C. Liang, H. L. Hu, S. B. Huang, C. W. Lee, W. H. Cheng, “Light Output Power
Enhancement of Micro-Gear Structure Light Emitting Diodes”, Optics And Photonics
Taiwan (OPT),National Taiwan Normal University, Taipei , Taiwan (Dec 11-12, 2009)
12.劉俊顯, 鍾政勳, 張晉凱, 鄭韋治, 林盈君, 蔡俊欽, 王朝盛, 洪上超,許益誠,
胡鴻烈, 黃勝邦, 李兆偉, 鄭木海, “混合高演色性螢光膠之可靠度實驗分析”,
Optics And Photonics Taiwan (OPT), National Taiwan Normal University, Taipei ,
Taiwan (Dec 11-12, 2009)
13.許益誠, 張晉凱, 劉俊顯, 鍾政勳, 鄭韋治, 蔡俊欽, 洪上超, 胡鴻烈,黃勝邦,
李兆偉, 鄭木海, “紫外光及藍光波段高功率發光二極體高溫加速老化之研究”,
Optics And Photonics Taiwan (OPT), National Taiwan Normal University, Taipei ,
Taiwan (Dec 11-12, 2009)
14. B. W. Lan, C. H. Hsiao, S. J. Chang, S. C. Hung, B. R. Huang, K. J. Chang, S. B. Wang
and S. P. Chang, “Photodetector of Zn1-xCdxSeNanowires with Different Cd
Compositions by MBE”, International Electron Devices and Materials Symposia
(IEDMS), Chang Gung University, Kweishan, Taoyuan, Taiwan (Nov 19-20, 2009)
15. S. B. Wang, C. H. Hsiao, S. J. Chang, S. H. Chih, S. C. Hung and B. R. Huang, “MBE
growth of ZnSe nanowires on oxidized silicon substrate” 4th Asia-Pacific Workshop
on Wide gap Semiconductors(APWS), Hunan, China (May 24-28, 2009)
16. C. H. Hsiao, S. B. Wang, B. W. Lan, S. J. Chang, S. C. Hung, T. C. Li and W. J. Lin
“ZnSe-based nanowire photoresponse prepared on oxidized silicon substrate by
MBE”, 4th Asia-Pacific Workshop on wide gap Semiconductors (APWS), Hunan, China
(May 24-28, 2009)
17. Y. K. Su , H. C. Hsu, S. J. Huang and S. C. Hung, “The study of V/III ratio effects on
direct growth of a-plane GaN over r-plane sapphire substrate” 4th Asia-Pacific
Workshop on Wide gap Semiconductors(APWS), Hunan, China (May 24-28, 2009)
18. L. H. King, Y. C. Kan* and S. C. Hung, “Analysis of top loading umbrella shape
antenna broadcasting in low frequency time domain”International Conference in
Business and Information Science, Shih Chien University, Kaohsung, Taiwan (May 1-2,
2009) ISBN 978-986-84674-4-5
19. S. C. Chang, B. Y. Chen, T. C. Lin and S. C. Hung, “Process Produced Stress Effect on
In-Line Sputtered Aluminum Doped Zinc Oxide Films”Optics And Photonics Taiwan
(OPT), Taipei, Taiwan (Dec 4-6, 2008)
20. T. C. Liang and S. C. Hung*, “Fabrication and characterization of Nitride base
photodiodes with nanostructures” International Conference on Electronic Materials
(IUMRS-ICEM2008), Sydney, Australia (Jul 27-Aug 1, 2008)
21. S. C. Hung*, T. C. Liang and T. L. Yen, “The investigation of optical properties on
large area vertical alined GaN nanotubes”, International Symposium on Nano Science
and Technology, Tainan, Taiwan (Nov 20-21, 2007)
22.S. C. Hung*, T. C. Liang, Y. K. Su, Y. H. Chen and T. L. Yen, “Electrical properties
characterization of high aspect ratio GaN nanocolumns array”, International
Workshop on Wide gap Semiconductors, Tainan, Taiwan(Feb 10-12, 2007)
23. S. C. Hung*, T. C. Liang and T. L. Yen, “Photoluminescence investigations of
nanoscale islands, tips and cones standing on GaN template”,Asia-Pacific
International Symposium on the Basics and Applications of Plasma Technology,
Taiwan (Dec 10-12, 2007 _Oral)
24. S. C. Hung*, Y. K. Su and T. H. Fang, “Electrical properties observations of gallium
nitride nanotubes”, 2st Annual IEEE Int. Conf. on Nano/MicroEngineered and
Molecular Systems, Bangkok , Thaland (Jan 5-8, 2007_Oral)
25. S. C. Hung*, Y. K. Su and S. J. Chang, “Current Image Study ofnanotubes Vertically
Aligned on GaN Template”, 2st Annual IEEE Int. Conf. onNano/Micro Engineered and
Molecular Systems, Bangkok, Thaland (Jan 5-8,2007_EI)
26. S. C. Hung* and Y. K. Su, “Shell buckling theory observation in vertically aligned
GaN hollow nanocolumn”, International workshop on innovations and advanced
studies, Tainan, Taiwan (Dec 12-15, 2006)
27. S. C. Hung*, Y. K. Su and S. J. Chang, “Controlled self-formation of GaN nanotubes
by inductively coupled plasmas etching”, 1st Annual IEEE Int. Conf. on Nano/Micro
Engineered and Molecular Systems, China (Jan 18-21,2006_Oral)
28. S. C. Hung*, Y. K. Su and T. H. Fang, “Elastic modulus investigation of gallium
nitride nanotubes”, 1st Annual IEEE Int. Conf. on Nano/MicroEngineered and
Molecular Systems, China, (Jan 18-21, 2006_Oral)
29. S. C. Hung*, Y. K. Su, S. J. Chang and R. W. Chuang, “Controlled self-formation of
GaN nanotubes by inductively coupled plasmas etching” , 1st Annual IEEE Int. Conf.
on Nano/Micro Engineered and Molecular Systems, Zhuhai, China (Jan 18-21,
2006_EI)
30. S. C. Hung*, Y. K. Su and T. H. Fang, “Elastic modulus investigation of Gallium
Nitride Nanotubes”, 1st Annual IEEE Int. Conf. on Nano/MicroEngineered and
Molecular Systems Zhuhai, China (Jan 18-21, 2006_EI)
31. S. C. Hung*, Y. K. Su, S. J. Chang, T. H. Fang, L.W. Ji and R. W. Chuang,
“Nanocolumns formation with controlled dimensions on gallium nitride template”,
2005 International Symposium on Nano Science and Technology,Tainan, Taiwan ,
(Nov 10-11, 2005)
32. S. C. Hung*, Y. K. Su, S. J. Chang and T. H. Fang, “Young’s Modulus investigatation
of nanotubes standing vertically on GaN template by nanoindentation”,
International Symposium on Point defects and Non-stoichiometry, Kaohsiung, Taiwan
(Oct 4-6, 2005)
33. S. C. Hung*, Y. K. Su, S. J. Chang, S. C. Chen1, L.W. Ji, T. H. Fang, Y. H. Chen,
“Self-formation of GaN hollow nanocolumns by inductively coupledplasmas etching”,
5th IEEE Conference on Nanotechnology (IEEE-NANO 2005), Nagoya, Japan (Jul 11-15,
2005)
34. L.W. Ji, S. C. Hung*, Y. K. Su, S. J. Chang, R. W. Chuang, and T. H. Fang, “Ultra small
self-organized nitride nanotips,” 1st International Conference on One-dimensional
Nanomaterials (ICON 2005), Taipei, Taiwan (Jan. 10-14,2005)
35. S. C. Hung*, L. W. Ji, Y. K. Su, S. J. Chang, T. H. Fang, S. C. Young, “Fabrication and
fractal analysis of GaN nanotips by ICP-RIE”, The 3rd Asian Conference on Chemical
Vapor Deposition, Taipei, Taiwan (Nov 12-14, 2004)
36. S. C. Hung*, L. W. Ji, Y. K. Su, S. J. Chang, C. H. Huang, S. J. Young, H. Y. Lee,
“ InGaN/GaN MQD P-N Junction Photodiodes”, International Conference on Solid
State Devices and Materials (SSDM 2004) Tokyo, Japan (Sep 15-17, 2004)