High Performance Lead-free (Bi0.5Na0.5)TiO3-BaTiO3 Piezoelectric
Thin Films
Rui Ding1, Qianru Lin1, Dennis Lorenzen1, Bingcheng Luo1, Qian Li2, Danyang
Wang1,e, Yun Liu2 and Sean Li1
1School
of Materials Science and Engineering, The University of New South Wales, Sydney, NSW
2052, Australia
2Research School of Chemistry, The Australian National University, Canberra, ACT 0200, Australia
e: dy.wang@unsw.edu.au
Because of the increasing environmental concerns from manufacturing and disposal
of lead-containing materials, high performance lead-free piezoelectric materials are
highly desired. In this study, manganese doped 0.94(Bi 0.5Na0.5)TiO3-0.06BaTiO3
(MnBNBT) thin films were epitaxially grown on SrRuO 3-coated SrTiO3(001) single
crystal substrates by pulsed laser deposition (PLD). The contributions of oxygen
partial pressure and substrate temperature on the ferroelectric, local piezoelectric
and dielectric properties of the films were studied. High remnant polarization of Pr =
33.0 μC/cm2 along with effective piezoelectric coefficient d33 over 100pm/V were
obtained in our film through judicious control of the PLD process. The results
suggest that the MnBNBT thin films are promising candidates for use in ferroelectric
and piezoelectric applications, including memory and micro-actuators.