Supporting Information
Highly Enhanced UV Photosensitivity and Recovery Speed in
Electrospun Ni-doped SnO2 Nanobelts
Siya Huang,1 Kohei Matsubara,1,2 Jing Cheng,1 Heping Li,1 and Wei Pan1,a)
1
State Key Laboratory of New Ceramics and Fine Processing,
School of Materials Science and Engineering,
Tsinghua University, Beijing 100084, People’s Republic of China
2
Department of Physical Electronics, Tokyo Institute of Technology,
2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
a)
Author to whom correspondence should be addressed.
Electronic mail: panw@tsinghua.edu.cn.
Figure S1. Time-dependent photoresponse of pristine SnO2 measured at a bias voltage of 1.0
−𝑡
V, where τd is estimated to be 13 s according to the exponential law: 𝐼 = 𝐼0 e ⁄𝜏𝑑 .
1
Figure S2. SEM images of Ni-doped SnO2 samples with different Ni-doping concentrations:
(a) 0 at. %, (b) 3.0 at. %, (c) 5.0 at. %, (d) 7.0 at. %, (e) 10.0 at. %, and (f) 15.0 at. %.
Table S1. SnO2-based photodetectors.*
Nanostructures
Devices
Light of
detection
Dark current
Or resistance
Photocurrent
Or
resistance
Sensitivity
Response
time
Ref
NW
FET
254 nm
0.66 nS
760 nS
103
( Vg:-10 V)
<0.1 s
[1]
NW
Resistor
325 nm
~ 2 µA
NW
NB
NW
Resistor
Resistor
Resistor
370 nm
254 nm
325 nm
~ 37.5 kΩ
0.4 nA
30 nA
NW
ZnO-functional
NW
NW
NW
NN
NB
Ni-doped NB
~ 14 µA
(air)
~ 12.5 kΩ
80 µA (air)
210 nA (air)
~3
105 (air)
7
235 nA
1.18
300 nA
1.50
1.69
107-104
(Vg:-40-0
V)
4.1
102
Resistor
365 nm
200 nA
Resistor
365 nm
77 µA
130 µA
FET
254 nm
0.12 µA
( Vg = 0 V)
83.9 µA
( Vg = 0 V)
~ 7 (air)
100300 s (air)
—
—
—
320 nm
89.9 µA
40 nA
375.2 µA
4.0 µA
2
[3]
[4]
[5]
—
[6]
—
[7]
Tens of
seconds
[8]
—
13 s
0.5-5 s
Resistor 254 nm
0.5 nA
0.65 µA
103
(15.0-3.0
(3.0 at.%)
(3.0 at.%)
at.%)
*NW-nanowire; NB-nanobelt; NN-nanonet; FET-field effect transistor
Resistor
[2]
[9]
Present
work
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